Ultrahigh vacuum multi-source co-deposition device and working method thereof

Abstract

The invention discloses an ultrahigh vacuum multi-source co-deposition device and a working method thereof. The ultrahigh vacuum multi-source co-deposition device comprises an ultrahigh vacuum magnetic rod, a beam source furnace, a sample support, a sample frame and a power connection seat, the sample frame and the power connection seat are sequentially sleeved on the ultrahigh vacuum magnetic rod from top to bottom, a plurality of annularly arranged sample supports are arranged on the sample frame, a beam source furnace is arranged on each sample support, and the tops of the plurality of beam source furnaces incline towards the center of the sample frame and face the top end of the ultrahigh vacuum magnetic rod. And a plurality of evaporation sources are integrated while the volume of the vacuum cavity is not increased, so that the equipment integration rate and the deposition efficiency are improved.

Description

Technical Field

[0001] The invention belongs to the field of vacuum evaporation, and relates to an ultra-high vacuum multi-source co-deposition device and a working method thereof. Background Art

[0002] With the continuous iterative development of manufacturing technology, future information devices are moving towards smaller size, lower power consumption and higher performance. Atomic and near-atomic scale manufacturing has become a frontier research hotspot of common concern in science, technology and industry. Currently, with the help of scientific instruments such as scanning tunneling microscopes (STM) and atomic force microscopes (AFM), single atoms can be imaged and manipulated in real time, thereby achieving atomic-level precision control of materials, devices and systems. However, the atomic manipulation manufacturing method based on scanning probes has a low throughput and requires harsh experimental conditions and expensive instruments.

[0003] The bottom-up additive manufacturing route starting from atoms has the potential for low-cost scalability and can controllably prepare atomic-level products such as single atoms, clusters, two-dimensional materials, and high-entropy alloys. The vapor deposition technology that vaporizes substances containing film-forming elements into atoms, molecules, atomic clusters, etc. and controls their deposition onto the surface of a solid substrate under certain conditions has been widely used in atomic manufacturing. Among them, the ultra-high vacuum evaporation source is a key technical equipment for material surface treatment and thin film deposition.

[0004] The preparation process of high-entropy alloy films often requires the integration of multiple evaporation sources, but conventional evaporation sources are large in size and require a larger vacuum chamber, resulting in low equipment integration rate and deposition efficiency. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide an ultra-high vacuum multi-source co-deposition device and a working method thereof, which integrates multiple evaporation sources without increasing the volume of the vacuum chamber, thereby improving the equipment integration rate and deposition efficiency.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions: An ultra-high vacuum multi-source co-deposition device, comprising an ultra-high vacuum magnetic rod, a beam source furnace, a sample holder, a sample rack and an electric connection seat; The sample rack and the electric socket are sequentially mounted on the ultra-high vacuum magnetic rod from top to bottom. The sample rack is provided with a plurality of sample holders arranged in a ring. A beam source furnace is provided on each sample holder. The tops of the plurality of beam source furnaces are inclined toward the center of the sample rack and toward the top of the ultra-high vacuum magnetic rod.

[0007] Preferably, the beam source furnace includes a micro-ceramic crucible with a rim, a heating coil, an insulating heat shield and power pins. The micro-ceramic crucible with a rim is located inside the insulating heat shield, the heating coil is wound around the outer wall of the micro-ceramic crucible with a rim, and the two outlet ends of the heating coil are connected to the power pins by welding with tantalum sheets and extend out of the bottom of the insulating heat shield.

[0008] Furthermore, the inner diameter of the micro ceramic crucible with a brim is less than 1 mm and the depth is 3-8 mm.

[0009] Furthermore, the heating coil has 20-30 turns and a wire diameter of less than 250 μm.

[0010] Preferably, two angle adjustment plates are provided at intervals on one end of the sample holder near the grabbing head, and two hinged plates are provided at intervals on the other end near the grabbing head. A first connecting plate and a second connecting plate are provided on both sides of the insulating heat shield. The first connecting plate is inserted in parallel between the two hinged plates and is hinged to the hinged plates through a hinge shaft. The second connecting plate is inserted in parallel between the two angle adjustment plates. An arc hole is provided on the angle adjustment plate, and a through hole is provided on the second connecting plate. Bolts and nuts are used to penetrate the arc hole and the through hole, and the outer diameters of the bolt heads and the nuts are larger than the diameters of the arc holes.

[0011] Preferably, the sample rack is a star-shaped structure, with a plurality of arms extending from the center to the surrounding areas, a limiting hole is provided in the center of the sample rack, and sample tray slots compatible with the sample tray are provided on both sides of each arm.

[0012] Preferably, the power socket includes a base, a U-shaped slot and a U-shaped electric contact. The base is polygonal, a through hole is provided in the center of the base, and two U-shaped slots are provided on each side. The U-shaped slots are connected to the U-shaped electric contact.

[0013] Preferably, the top end of the ultra-high vacuum magnetic rod is connected to an evaporation source baffle.

[0014] A working method of an ultra-high vacuum multi-source co-deposition device comprises the following steps: Fill the required source materials into the micro ceramic crucible with eaves, and complete the substrate loading; Connecting the sample holder loaded with the beam source furnace to the sample rack of the multi-source co-deposition device; Install the ultra-high vacuum multi-source co-deposition device into the vacuum system, turn on the vacuum maintenance device, and control the system in an ultra-high vacuum environment; Connect the DC power supply to the electrode flange of the ultra-high vacuum magnetic rod; Current is passed through each heating coil, and the heating power is less than 20W, so as to heat and degas each source material; Observe the system vacuum gauge. After the system vacuum is stable, gradually increase the heating DC size to gradually reach the required heating temperature and start co-deposition.

[0015] Preferably, before co-deposition, the evaporation source baffle is in a shielding state, and when co-deposition begins, the evaporation source baffle is opened.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The present invention integrates multiple sample racks with beam source furnaces on one sample rack and arranges them in a ring shape, with the beam source furnace facing the top of the ultra-high vacuum magnetic rod. This makes it unnecessary for multiple evaporation sources to be placed separately in the vacuum chamber. The ultra-high vacuum magnetic rod and the sample rack are integrated inside the vacuum chamber without increasing the volume of the vacuum chamber, thereby improving the equipment integration rate and deposition efficiency.

[0017] Furthermore, for the preparation of atomic-level structures, the micro-evaporation source provides sufficient volume and evaporation capacity to meet the needs of fine manufacturing. Secondly, its power is extremely low, less than 10% of conventional evaporation sources, and it can provide a stable and controllable evaporation rate at a lower energy input. It does not require a water cooling device to reduce its heat-affected range and avoid damage to the atomic-level structure of the material. The small size of the beam source furnace enables efficient material evaporation and deposition in a limited space.

[0018] Furthermore, by adjusting the different fixed positions of the through hole of the second connecting plate and the arc hole, the angle of each evaporation source is adjusted according to the distance between the evaporation source and the substrate, so that multiple evaporation sources are focused on the same position on the substrate surface.

[0019] Furthermore, the sample holder is plugged into the sample rack, and with the assistance of the sample transfer device, the evaporation source can be quickly replaced without destroying the vacuum environment, significantly improving work efficiency. At the same time, the introduction of external pollutants is avoided, the purity of the material preparation process is ensured, and highly sensitive atomic-level structural features are maintained. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic structural diagram of an ultra-high vacuum multi-source co-deposition device of the present invention; Figure 2 It is a schematic diagram of the beam source furnace and sample holder structure of the present invention; Figure 3 It is a schematic diagram of the structure of a micro ceramic crucible with eaves and a heating coil of the present invention; Figure 4 It is a schematic diagram of the sample rack structure of the present invention; Figure 5 It is a schematic diagram of the structure of the power socket of the present invention.

[0021] Among them: 1. Evaporation source baffle; 2. Ultra-high vacuum magnetic rod; 3. Beam source furnace; 4. Sample holder; 5. Sample rack; 6. Power connection seat; 301. Micro ceramic crucible with eaves; 302. Heating coil; 303. Insulating heat shield; 304. Power connection pin; 401. Angle adjustment plate; 402. Hinge plate; 501. Limiting hole; 502. Sample holder slot; 601. Base; 602. U-shaped card slot; 603. U-shaped electric contact. DETAILED DESCRIPTION

[0022] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0023] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which the present invention belongs. The terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. The term "and / or" used in this article includes any and all combinations of one or more related listed items. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0025] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0026] like Figure 1 As shown, the ultra-high vacuum multi-source co-deposition device of the present invention includes an evaporation source baffle 1, an ultra-high vacuum magnetic rod 2, a beam source furnace 3, a sample holder 4, a sample rack 5 and an electric connection seat 6.

[0027] The ultra-high vacuum magnetic rod 2 serves as a supporting body, and an evaporation source baffle 1 is welded on the top of the ultra-high vacuum magnetic rod 2. The shape of the evaporation source baffle 1 can be designed according to the needs. The evaporation source baffle 1 is rotated by a magnetic coupling transmission mechanism located outside the vacuum to achieve shielding and opening of the evaporation beam.

[0028] The ultra-high vacuum magnetic rod 2 includes a sealing flange, a fixed hollow tube and a magnetic coupling movable rod. The vacuum side of the fixed hollow tube and the sealing flange are connected by welding. The magnetic coupling movable rod is driven by a vacuum external drive device through magnetic coupling and passes through the fixed hollow tube.

[0029] The top of the magnetic coupling movable rod is connected with an evaporation source baffle 1, and a limiting mechanism is provided on the outside of the fixed hollow tube for sequentially connecting the sample holder 5 and the electric connection seat 6 from top to bottom.

[0030] The sample rack 5 and the power socket 6 are provided with through holes in their centers, and the sample rack 5 and the power socket 6 are both mounted on the ultra-high vacuum magnetic rod 2 through the through holes, and the sample rack 5 is located above the power socket 6. The sample rack 5 is used to carry multiple sample holders 4 and an ultra-high vacuum micro beam source furnace 3. This embodiment shows an implementation scheme of 5 groups of evaporation sources.

[0031] There are multiple beam source furnaces 3, which are mounted on a sample rack 5 through a sample holder 4 and arranged in a ring. The tops of the multiple beam source furnaces 3 are inclined toward the center and toward the evaporation source baffle 1.

[0032] like Figure 2As shown, the beam source furnace 3 includes a micro ceramic crucible with a rim 301, a heating coil 302, an insulating heat shield 303 and an electrical pin 304. The micro ceramic crucible with a rim 301 is located inside the insulating heat shield 303. The heating coil 302 is wound around the outer wall of the micro ceramic crucible with a rim 301. The heating coil 302 uses a high-purity fine tungsten, tantalum or molybdenum wire with a wire diameter of less than 150 μm. The inner diameter of the multi-turn coil is about 1 mm, and the number of turns is 20-30. The heating coil 302 has an extremely fine wire diameter and a large winding density, so that the heat is more concentrated, and the heating area space is only about 4 mm 3 , making the heating efficiency greater, and quickly reaching a high temperature of 2000°C at an extremely low power of less than 20W, which can meet the evaporation conditions of various source materials. The two outlet ends of the heating coil 302 are connected to the power pin 304 through tantalum sheet welding, extending out of the bottom of the insulating heat shield 303 surrounding the heating component.

[0033] like Figure 3 As shown, the micro ceramic crucible with a rim 301 is placed in the heating coil 302. The micro ceramic crucible with a rim 301 is a cylinder. The top of the micro ceramic crucible with a rim is provided with an outer rim. The diameter of the outer rim is larger than the inner diameter of the heating coil 302 by 1 mm, so that it can be stably placed on the top of the coil. The inner diameter of the micro ceramic crucible with a rim 301 is less than 1 mm, and the depth is less than 10 mm. In this embodiment, the inner diameter of the micro ceramic crucible with a rim 301 is only 0.5 mm, the aperture depth is 5 mm, and its capacity is 0.005 cc. It is made of high-purity Al2O3 ceramic material compatible with ultra-high vacuum, and is compatible with a variety of source material forms such as wire, powder, granule, and liquid. The extremely small aperture can be approximately regarded as a point evaporation source, the evaporation beam is concentrated and the heat affected range is small, and the evaporation rate is highly controllable, which is conducive to the stable preparation of ultra-thin films, atomic clusters, and single atoms.

[0034] like Figure 2 As shown, the insulating heat shield 303 is connected to the sample holder 4, and two angle adjustment plates 401 are arranged at intervals on one end of the sample holder 4 close to the grabbing head, and two hinged plates 402 are arranged at intervals on the other end close to the grabbing head. A first connecting plate and a second connecting plate are arranged on both sides of the insulating heat shield 303. The first connecting plate is inserted in parallel between the two hinged plates 402, and is hinged to the hinged plate 402 through a hinge shaft, which serves as a rotation center to realize the overall rotation of the beam source furnace 3; the second connecting plate is inserted in parallel between the two angle adjustment plates 401, and an arc hole is arranged on the angle adjustment plate 401, and a through hole is arranged on the second connecting plate, and bolts and nuts are used to penetrate the arc hole and the through hole, and the outer diameters of the bolt head and the nut are larger than the diameter of the arc hole. By adjusting the different fixed positions of the through hole of the second connecting plate and the arc hole, the inclination angle of the beam source furnace 3 is adjusted, so that its evaporation angle is adjustable within 0-25°.

[0035] A through hole is provided in the middle of the sample holder 4 for the electrical pin 304 to pass through.

[0036] The beam source furnace 3 installed on the sample holder 4 can realize angle adjustment. The angle of each evaporation source is adjusted according to the distance between the evaporation source and the substrate, so that multiple evaporation sources are focused on the same position on the substrate surface.

[0037] The sample holder 4 is a triangular structure, which is obtained by beveling the two sides of a standard flag-shaped sample holder at 36 degrees, so as to allow five sample holders 4 to be accommodated simultaneously within a circumference.

[0038] like Figure 4 As shown, the sample rack 5 of the multi-source co-deposition device of the present invention mainly includes a limiting hole 501 and a sample holder slot 502. The sample rack 5 is a star-shaped structure, with multiple arms extending from the center to the surroundings. In this embodiment, there are five arms. The limiting hole 501 is an M6 internal thread through hole, located in the center of the sample rack 5, so that the sample rack 5 is fixed to the outside of the ultra-high vacuum magnetic rod 2; sample holder slots 502 compatible with the sample holder 4 are provided on both sides of each arm, and the sample holder 4 can be slidably inserted along the sample holder slots 502. The overall material is 316L stainless steel compatible with ultra-high vacuum.

[0039] The diameter of the sample holder 5 does not exceed 58 mm.

[0040] like Figure 5 As shown, the power receiving seat 6 of the multi-source co-deposition device of the present invention includes a base 601, a U-shaped card slot 602 and a U-shaped electric contact 603. The base 601 is made of high-purity Zr2O3, which has low outgassing and high hardness in a vacuum environment, and has good wear resistance. A through hole is provided in the center of the base 601 to pass through the ultra-high vacuum magnetic rod 2. The base 601 is a polygon, and in this embodiment, it is a pentagon. Each side is provided with two U-shaped card slots 602 aligned with the center of the sample holder slot 502. The U-shaped card slot 602 is used to fix the U-shaped electric contact 603 to the side of the power receiving seat 6.

[0041] The U-shaped electric contact 603 is made of pure copper electric contact with a certain elasticity. The distance between the opposite surfaces of a U-shaped electric contact 603 is slightly smaller than the diameter of the power pin 304. When connected, the copper sheet is used for elastic fastening. The wire of the power pin 304 is inserted into the bottom of the U-shaped electric contact 603 and fastened by screws inserted into the clamping screw hole. The other end of the wire is connected to the terminal on the sealing electrode flange.

[0042] The multi-source co-deposition device expands the advantages of low-power ultra-high vacuum micro-evaporation sources and can integrate multiple evaporation sources into a small space. The extremely low power avoids mutual thermal influence and realizes efficient co-deposition of different materials. Secondly, it can also accurately control the proportion of each component to meet the requirements of different applications for alloy film composition and performance.

[0043] The above ultra-high vacuum multi-source co-deposition device is applied in practice. The specific installation and use process is as follows: The first step is to build and assemble the device. First, fill the required source materials into the micro ceramic crucible with a rim 301, and complete the substrate loading.

[0044] In the second step, the sample holder 4 loaded with the beam source furnace 3 is connected to the sample rack 5 of the multi-source co-deposition device, and the tilt angle of the beam source furnace 3 is adjusted according to the distance between the evaporation source and the substrate so that the evaporation source is focused on the substrate surface.

[0045] The third step is to install the ultra-high vacuum multi-source co-deposition device into the vacuum system, turn on the vacuum maintaining device, and control the system in an ultra-high vacuum environment.

[0046] The fourth step is to connect the DC power supply to the electrode flange of the ultra-high vacuum magnetic rod 2 and put the evaporation source baffle 1 in a shielding state.

[0047] In the fifth step, a small current is passed through each heating coil 302 to heat and degas each source material for a period of time.

[0048] Step 6. Observe the system vacuum gauge. After the system vacuum is stable, gradually increase the heating DC size to gradually reach the required heating temperature, and open the evaporation source baffle 1 to start co-deposition.

[0049] It should be noted that, in this article, the terms "comprises", "includes" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus.

[0050] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0051] It should be understood that the above description is for illustration and not for limitation. Many embodiments and many applications beyond the examples provided will be apparent to those skilled in the art upon reading the above description. Therefore, the scope of this patent should not be determined with reference to the above description, but rather with reference to the preceding claims and the full scope of equivalents to which such claims are entitled. For the purpose of comprehensiveness, all articles and references, including disclosures of patent applications and publications, are incorporated herein by reference. The omission of any aspect of the subject matter disclosed herein in the preceding claims is not intended to be a waiver of such subject matter, nor should it be considered that the applicant has not considered such subject matter to be part of the disclosed inventive subject matter.

Claims

1. An ultra-high vacuum multi-source co-deposition device, characterized in that: It includes an ultra-high vacuum magnetic rod (2), a beam source furnace (3), a sample holder (4), a sample rack (5) and an electric socket (6); The sample rack (5) and the electric socket (6) are sequentially mounted on the ultra-high vacuum magnetic rod (2) from top to bottom. The sample rack (5) is provided with a plurality of sample holders (4) arranged in a ring shape. Each sample holder (4) is provided with a beam source furnace (3). The tops of the plurality of beam source furnaces (3) are inclined toward the center of the sample rack (5) and toward the top of the ultra-high vacuum magnetic rod (2).

2. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The beam source furnace (3) comprises a micro ceramic crucible with a ridge (301), a heating coil (302), an insulating heat shield (303) and an electrical connection pin (304); the micro ceramic crucible with a ridge (301) is located inside the insulating heat shield (303); the heating coil (302) is wound around the outer wall of the micro ceramic crucible with a ridge (301); two outlet ends of the heating coil (302) are connected to the electrical connection pin (304) by welding with tantalum sheets, and extend out of the bottom of the insulating heat shield (303).

3. The ultra-high vacuum multi-source co-deposition device according to claim 2, characterized in that: The micro ceramic crucible with a rim (301) has an inner diameter of less than 1 mm and a depth of 3-8 mm.

4. The ultra-high vacuum multi-source co-deposition device according to claim 2, characterized in that: The heating coil (302) has 20-30 turns and a wire diameter of less than 250 μm.

5. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: Two angle adjustment plates (401) are arranged at intervals on one end of the sample holder (4) close to the grabbing head, and two hinged plates (402) are arranged at intervals on one end close to the grabbing head. A first connecting plate and a second connecting plate are arranged on both sides of the insulating heat shield (303). The first connecting plate is inserted in parallel between the two hinged plates (402) and is hinged to the hinged plates (402) via a hinge shaft. The second connecting plate is inserted in parallel between the two angle adjustment plates (401). An arc hole is arranged on the angle adjustment plate (401), and a through hole is arranged on the second connecting plate. Bolts and nuts are used to penetrate the arc hole and the through hole, and the outer diameters of the bolt heads and the nuts are larger than the diameters of the arc holes.

6. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The sample rack (5) is a star-shaped structure, with a plurality of arms extending from the center to the periphery. A limiting hole (501) is provided at the center of the sample rack (5), and sample holder slots (502) compatible with the sample holder (4) are provided on both sides of each arm.

7. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The power socket (6) comprises a base (601), a U-shaped slot (602) and a U-shaped electric contact piece (603); the base (601) is polygonal; a through hole is provided at the center of the base (601); two U-shaped slots (602) are provided on each side; and the U-shaped slots (602) are connected to the U-shaped electric contact piece (603).

8. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The top end of the ultra-high vacuum magnetic rod (2) is connected to an evaporation source baffle (1).

9. A working method of the ultra-high vacuum multi-source co-deposition device according to any one of claims 1 to 8, characterized in that: The process includes: Filling the required source materials into the micro ceramic crucible with eaves (301), and completing the substrate loading; Connecting a sample holder (4) loaded with a beam source furnace (3) to a sample rack (5) of a multi-source co-deposition device; Install the ultra-high vacuum multi-source co-deposition device into the vacuum system, turn on the vacuum maintenance device, and control the system in an ultra-high vacuum environment; Connect a DC power supply to the electrode flange of the ultra-high vacuum magnetic rod (2); Passing current through each heating coil (302), with a heating power of less than 20W, to heat and degas each source material; Observe the system vacuum gauge. After the system vacuum is stable, gradually increase the heating DC size to gradually reach the required heating temperature and start co-deposition.

10. The working method of the ultra-high vacuum multi-source co-deposition device according to claim 9, characterized in that: Before co-deposition, the evaporation source baffle (1) is placed in a shielding state, and when co-deposition begins, the evaporation source baffle (1) is opened.

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