An ultrahigh vacuum multi-source co-deposition device and a working method thereof

Abstract

The application discloses an ultrahigh vacuum multi-source co-deposition device and a working method thereof, comprising an ultrahigh vacuum magnetic rod, a beam source furnace, a sample holder, a sample rack and a power receiving seat. The sample rack and the power receiving seat are sequentially sleeved on the ultrahigh vacuum magnetic rod from top to bottom, the sample rack is provided with a plurality of annularly arranged sample holders, one beam source furnace is arranged on each sample holder, the top of the plurality of beam source furnaces is inclined towards the center of the sample rack and the top end of the ultrahigh vacuum magnetic rod. While the volume of the vacuum cavity is not increased, the plurality of evaporation sources are integrated, and the equipment integration rate and the deposition efficiency are improved.

Description

Technical Field

[0001] The invention belongs to the field of vacuum evaporation, and relates to an ultra-high vacuum multi-source co-deposition device and a working method thereof. Background Art

[0002] With the continuous iterative advancement of manufacturing technology, future information devices are moving towards smaller size, lower power consumption, and higher performance. Manufacturing at the atomic and near-atomic scales has become a cutting-edge research hotspot of shared interest in science, technology, and industry. Currently, scientific instruments such as scanning tunneling microscopes (STMs) and atomic force microscopes (AFMs) enable imaging of individual atoms and real-time manipulation, enabling precise atomic-level control of materials, devices, and systems. However, scanning probe-based atomic manipulation methods have low throughput and require demanding experimental conditions and expensive instrumentation.

[0003] The bottom-up additive manufacturing approach, starting from atoms, offers the potential for low-cost scalability and allows for the controlled preparation of atomic-scale products, including single atoms, clusters, two-dimensional materials, and high-entropy alloys. Vapor deposition techniques, which vaporize materials containing film-forming elements into atoms, molecules, and atomic clusters and then controllably deposit them onto solid substrates under specific conditions, have been widely applied in atomic manufacturing. Ultrahigh vacuum evaporation sources are key technologies for surface treatment and thin-film deposition.

[0004] The preparation process of high-entropy alloy films often requires the integration of multiple evaporation sources, but conventional evaporation sources are large in size and require a larger vacuum chamber, resulting in low equipment integration rate and deposition efficiency. Summary of the Invention

[0005] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide an ultra-high vacuum multi-source co-deposition device and a working method thereof, which integrates multiple evaporation sources without increasing the volume of the vacuum chamber, thereby improving the equipment integration rate and deposition efficiency.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] An ultra-high vacuum multi-source co-deposition device, comprising an ultra-high vacuum magnetic rod, a beam source furnace, a sample holder, a sample rack and an electric connection seat;

[0008] The sample holder and the electric socket are sequentially placed on the ultra-high vacuum magnetic rod from top to bottom. The sample holder is provided with multiple sample holders arranged in a ring. Each sample holder is provided with a beam source furnace. The tops of the multiple beam source furnaces are tilted toward the center of the sample holder and toward the top of the ultra-high vacuum magnetic rod.

[0009] Preferably, the beam source furnace includes a micro-ceramic crucible with a rim, a heating coil, an insulating heat shield and a power pin. The micro-ceramic crucible with a rim is located inside the insulating heat shield, the heating coil is wound around the outer wall of the micro-ceramic crucible with a rim, and the two output ends of the heating coil are connected to the power pin by welding with tantalum sheets and extend out of the bottom of the insulating heat shield.

[0010] Furthermore, the inner diameter of the micro ceramic crucible with a ridge is less than 1 mm and the depth is 3-8 mm.

[0011] Furthermore, the heating coil has 20-30 turns and a wire diameter of less than 250 μm.

[0012] Preferably, two angle adjustment plates are provided at intervals on one end of the sample holder near the grabbing head, and two hinged plates are provided at intervals on the other end near the grabbing head. A first connecting plate and a second connecting plate are provided on both sides of the insulating heat shield. The first connecting plate is inserted parallel to the two hinged plates and is hinged to the hinged plates through a hinge shaft. The second connecting plate is inserted parallel to the two angle adjustment plates. An arc hole is provided on the angle adjustment plate, and a through hole is provided on the second connecting plate. Bolts and nuts are used to penetrate the arc hole and the through hole, and the outer diameters of the bolt heads and the nuts are larger than the diameters of the arc holes.

[0013] Preferably, the sample rack is a star-shaped structure with a plurality of arms extending from the center to the surrounding areas. A limiting hole is provided in the center of the sample rack, and sample holder slots compatible with the sample holder are provided on both sides of each arm.

[0014] Preferably, the power socket includes a base, a U-shaped slot and a U-shaped electrical contact. The base is polygonal, a through hole is provided in the center of the base, and two U-shaped slots are provided on each side. The U-shaped slots are connected to the U-shaped electrical contacts.

[0015] Preferably, the top end of the ultra-high vacuum magnetic rod is connected to an evaporation source baffle.

[0016] A method for operating an ultra-high vacuum multi-source co-deposition device includes the following steps:

[0017] Fill the required source materials into the micro ceramic crucible with eaves and complete the substrate loading;

[0018] Connect the sample holder loaded with the beam source furnace to the sample rack of the multi-source co-deposition device;

[0019] Install the ultra-high vacuum multi-source co-deposition device into the vacuum system, turn on the vacuum maintenance device, and control the system in an ultra-high vacuum environment;

[0020] Connect the DC power supply to the electrode flange of the ultra-high vacuum magnetic rod;

[0021] Current is passed through each heating coil, with a heating power of less than 20W, to heat and degas each source material;

[0022] Observing the vacuum gauge of the system, when the system vacuum is stable, gradually increase the heating direct current to gradually reach the required heating temperature, and start the co-deposition.

[0023] Preferably, before co-deposition, the evaporation source shutter is in a shielding state, and when the co-deposition starts, the evaporation source shutter is opened.

[0024] Compared with the prior art, the present application has the following beneficial effects:

[0025] By integrating multiple beam source furnaces on a sample holder in a ring arrangement, the beam source furnaces are directed towards the top end of the ultrahigh vacuum magnetic rod, multiple evaporation sources do not need to be placed separately in the vacuum chamber, and the ultrahigh vacuum magnetic rod and the sample holder are integrated inside the vacuum chamber without increasing the volume of the vacuum chamber, thereby improving the equipment integration rate and deposition efficiency.

[0026] Further, for the preparation of atomic-level structures, the micro-evaporation source provides sufficient volume and evaporation capacity to meet the needs of fine manufacturing. Secondly, its power is extremely low, less than 10% of that of a conventional evaporation source, which can provide a stable and controllable evaporation rate at a lower energy input without the need for water cooling devices to reduce its thermal influence range, avoiding damage to the atomic-level structure of the material. The small size of the beam source furnace allows it to achieve efficient material evaporation and deposition in a limited space.

[0027] Further, by adjusting the different fixed positions of the through holes of the second connecting plate and the arc-shaped holes, the angles of the evaporation sources are adjusted according to the distance between the evaporation sources and the substrate, so that the multiple evaporation sources are focused on the same position on the substrate surface.

[0028] Further, the sample holder and the sample holder are connected, which can realize the rapid replacement of the evaporation source under the assistance of the sample transmission device without damaging the vacuum environment, significantly improving the work efficiency. At the same time, it avoids the introduction of external pollutants, ensures the purity of the material preparation process, and maintains the characteristics of highly sensitive atomic-level structures. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 It is a schematic diagram of the structure of the ultrahigh vacuum multi-source co-deposition device of the present application;

[0030] Figure 2 It is a schematic diagram of the structure of the beam source furnace and the sample holder of the present application;

[0031] Figure 3 It is a schematic diagram of the structure of the micro-ceramic eaves crucible and heating coil of the present application;

[0032] Figure 4 It is a schematic diagram of the structure of the sample holder of the present application;

[0033] Figure 5It is a schematic structural diagram of the power socket of the present invention.

[0034] Among them: 1. Evaporation source baffle; 2. Ultra-high vacuum magnetic rod; 3. Beam source furnace; 4. Sample holder; 5. Sample rack; 6. Electric connection base; 301. Micro ceramic crucible with eaves; 302. Heating coil; 303. Insulation heat shield; 304. Power connection pin; 401. Angle adjustment plate; 402. Hinge plate; 501. Limiting hole; 502. Sample holder slot; 601. Base; 602. U-shaped card slot; 603. U-shaped electrical contact. DETAILED DESCRIPTION

[0035] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present invention.

[0036] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which the present invention pertains. The terms "installed", "connected", and "connected" should be understood in a broad sense, for example, they can be fixedly connected, detachably connected, or integrally connected; they can be mechanically connected, electrically connected, or able to communicate with each other; they can be directly connected, or indirectly connected through an intermediate medium, or they can be internally connected between two elements or an interactive relationship between two elements. The term "and / or" used herein includes any and all combinations of one or more related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0038] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numbers and / or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0039] like Figure 1 As shown, the ultra-high vacuum multi-source co-deposition device of the present invention includes an evaporation source baffle 1, an ultra-high vacuum magnetic rod 2, a beam source furnace 3, a sample holder 4, a sample rack 5 and an electric socket 6.

[0040] The ultra-high vacuum magnetic rod 2 serves as the supporting body, and an evaporation source baffle 1 is welded to the top of the ultra-high vacuum magnetic rod 2. The shape of the evaporation source baffle 1 can be designed according to requirements. The evaporation source baffle 1 is rotated by a magnetic coupling transmission mechanism located outside the vacuum to achieve the shielding and opening of the evaporation beam.

[0041] The ultra-high vacuum magnetic rod 2 includes a sealing flange, a fixed hollow tube and a magnetic coupling movable rod. The vacuum side of the fixed hollow tube and the sealing flange are connected by welding. The magnetic coupling movable rod is driven by a vacuum external drive device through magnetic coupling and passes through the inside of the fixed hollow tube.

[0042] The top of the magnetic coupling movable rod is connected to the evaporation source baffle 1, and a limiting mechanism is provided on the outside of the fixed hollow tube for sequentially connecting the sample holder 5 and the electric socket 6 from top to bottom.

[0043] The sample holder 5 and the electric socket 6 are centrally provided with through-holes. Both the sample holder 5 and the electric socket 6 are mounted on the ultra-high vacuum magnetic rod 2 through the through-holes, with the sample holder 5 positioned above the electric socket 6. The sample holder 5 is used to support multiple sample holders 4 and the ultra-high vacuum micro-beam source furnace 3. This embodiment demonstrates an implementation scheme with five sets of evaporation sources.

[0044] There are multiple beam source furnaces 3, which are mounted on a sample rack 5 via a sample holder 4 and arranged in a ring. The tops of the multiple beam source furnaces 3 are tilted toward the center, facing the evaporation source baffle 1.

[0045] like Figure 2 As shown, the beam source furnace 3 includes a micro ceramic crucible with a ridge 301, a heating coil 302, an insulating heat shield 303 and a power pin 304. The micro ceramic crucible with a ridge 301 is located inside the insulating heat shield 303, and the heating coil 302 is wound around the outer wall of the micro ceramic crucible with a ridge 301. The heating coil 302 uses a high-purity fine tungsten, tantalum or molybdenum wire with a wire diameter of less than 150μm. The inner diameter of the multi-turn coil is about 1mm, and the number of turns is 20-30. The heating coil 302 has an extremely fine wire diameter and a high winding density, which makes the heat more concentrated and the heating area space is only about 4mm 3 This increases heating efficiency, allowing temperatures of 2000°C to be quickly reached at extremely low power levels, less than 20W, meeting the requirements for vapor deposition of a wide range of source materials. The two leads of the heating coil 302 are welded to the power pins 304 via tantalum sheets, extending beyond the bottom of the insulating heat shield 303 surrounding the heating assembly.

[0046] like Figure 3 As shown, the micro ceramic crucible with a rim 301 is placed in the heating coil 302. The micro ceramic crucible with a rim 301 is cylindrical, and an outer rim is provided on the top of the micro ceramic crucible with a rim. The diameter of the outer rim is 1 mm larger than the inner diameter of the heating coil 302, so that it is stably placed on the top of the coil. The inner diameter of the micro ceramic crucible with a rim 301 is less than 1 mm, and the depth is less than 10 mm. In this embodiment, the inner diameter of the micro ceramic crucible with a rim 301 is only 0.5 mm, the aperture depth is 5 mm, and its capacity is 0.005 cc. It is made of high-purity Al2O3 ceramic material compatible with ultra-high vacuum, and is compatible with various source material forms such as wire, powder, granular, and liquid. The extremely small aperture can be approximately regarded as a point evaporation source. The evaporation beam is concentrated and the heat affected range is small. The evaporation rate is highly controllable, which is conducive to the stable preparation of ultra-thin films, atomic clusters, and single atoms.

[0047] like Figure 2As shown, the insulating heat shield 303 is connected to the sample holder 4, and two angle adjustment plates 401 are provided at intervals on the end of the sample holder 4 close to the grabbing head, and two hinged plates 402 are provided at intervals on the end close to the grabbing head. A first connecting plate and a second connecting plate are provided on both sides of the insulating heat shield 303. The first connecting plate is inserted parallel to the two hinged plates 402, and is hinged to the hinged plate 402 through a hinge shaft, serving as the rotation center to realize the overall rotation of the beam source furnace 3; the second connecting plate is inserted parallel to the two angle adjustment plates 401, and an arc hole is provided on the angle adjustment plate 401, and a through hole is provided on the second connecting plate. Bolts and nuts are used to penetrate the arc hole and the through hole. The outer diameters of the bolt heads and the nuts are larger than the diameters of the arc holes. By adjusting the different fixed positions of the through holes of the second connecting plate and the arc holes, the inclination angle of the beam source furnace 3 can be adjusted so that its evaporation angle can be adjusted within 0-25°.

[0048] A through hole is provided in the middle of the sample holder 4 for the electrical pin 304 to pass through.

[0049] The beam source furnace 3 installed on the sample holder 4 can realize angle adjustment. The angle of each evaporation source is adjusted according to the distance between the evaporation source and the substrate, so that multiple evaporation sources are focused on the same position on the substrate surface.

[0050] The sample holder 4 is a triangular structure, which is obtained by beveling a standard flag-shaped sample holder at 36 degrees on both sides, so as to allow five sample holders 4 to be accommodated simultaneously within a circumference.

[0051] like Figure 4 Figure 5 shows the sample holder 5 of the multi-source co-deposition apparatus of the present invention. Its structure primarily includes a limiting hole 501 and a sample holder slot 502. The sample holder 5 is a star-shaped structure with multiple arms extending from the center. In this embodiment, there are five arms. The limiting hole 501 is an M6 internally threaded through-hole located in the center of the sample holder 5, securing the sample holder 5 to the outside of the ultra-high vacuum magnetic rod 2. Sample holder slots 502 compatible with the sample holder 4 are located on either side of each arm. The sample holder 4 can slide into the slots 502. The entire structure is made of ultra-high vacuum-compatible 316L stainless steel.

[0052] The diameter of the sample holder 5 does not exceed 58 mm.

[0053] like Figure 5 The figure shows the power receiving base 6 of the multi-source co-deposition apparatus described herein, comprising a base 601, a U-shaped slot 602, and a U-shaped electrical contact 603. Base 601 is made of high-purity Zr2O3, which exhibits minimal outgassing, high hardness, and excellent wear resistance in a vacuum environment. A through-hole is provided in the center of base 601 to allow the ultra-high vacuum magnetic rod 2 to pass through. Base 601 is polygonal, in this embodiment a pentagon, with two U-shaped slots 602 on each side aligned with the center of the sample holder slot 502. These slots are used to secure the U-shaped electrical contact 603 to the side of power receiving base 6.

[0054] The U-shaped electrical contact 603 is made of pure copper with a certain degree of elasticity. The distance between the opposite surfaces of a U-shaped electrical contact 603 is slightly smaller than the diameter of the power pin 304. When connected, the copper sheet is elastically fastened. The wire of the power pin 304 is inserted into the bottom of the U-shaped electrical contact 603 and tightened by screwing it through the clamping screw hole. The other end of the wire is connected to the terminal on the sealing electrode flange.

[0055] The multi-source co-deposition device expands the advantages of low-power ultra-high vacuum micro-evaporation sources and can integrate multiple evaporation sources into a small space. The extremely low power avoids mutual thermal influence and realizes efficient co-deposition of different materials. Secondly, it can also accurately control the proportion of each component to meet the requirements of different applications for alloy film composition and performance.

[0056] The above ultra-high vacuum multi-source co-deposition device is applied in practice. The specific installation and use process is as follows:

[0057] The first step is to build and assemble the device. First, the required source materials are loaded into the micro ceramic crucible with a rim 301, and the substrate is loaded.

[0058] In the second step, the sample holder 4 loaded with the beam source furnace 3 is connected to the sample rack 5 of the multi-source co-deposition device, and the tilt angle of the beam source furnace 3 is adjusted according to the distance between the evaporation source and the substrate so that the evaporation source is focused on the substrate surface.

[0059] The third step is to install the ultra-high vacuum multi-source co-deposition device into the vacuum system, turn on the vacuum maintenance device, and control the system in an ultra-high vacuum environment.

[0060] The fourth step is to connect the DC power supply to the electrode flange of the ultra-high vacuum magnetic rod 2 and put the evaporation source baffle 1 in a shielded state.

[0061] In the fifth step, a small current is passed through each heating coil 302 to heat and degas each source material for a period of time.

[0062] Step 6: Observe the system vacuum gauge. After the system vacuum is stable, gradually increase the heating DC size to gradually reach the required heating temperature, open the evaporation source baffle 1 and start co-deposition.

[0063] It should be noted that, in this article, the terms "comprises", "includes" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus that includes a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements that are inherent to such process, method, article or apparatus.

[0064] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0065] It should be understood that the above description is for illustration and not for limitation. Many embodiments and many applications beyond the examples provided will be apparent to those skilled in the art upon reading the above description. Therefore, the scope of this patent should not be determined with reference to the above description, but rather with reference to the preceding claims and the full scope of equivalents to which such claims are entitled. For the purpose of completeness, all articles and references, including disclosures of patent applications and publications, are incorporated herein by reference. The omission of any aspect of the subject matter disclosed herein from the preceding claims is not a disclaimer of such subject matter, nor should it be considered that the applicants did not consider such subject matter to be part of the disclosed inventive subject matter.

Claims

1. An ultra-high vacuum multi-source co-deposition device, characterized in that: It includes an ultra-high vacuum magnetic rod (2), a beam source furnace (3), a sample holder (4), a sample rack (5) and an electric socket (6); The sample rack (5) and the electric socket (6) are sequentially mounted on the ultra-high vacuum magnetic rod (2) from top to bottom. A plurality of sample holders (4) arranged in a ring are provided on the sample rack (5). A beam source furnace (3) is provided on each sample holder (4). The tops of the plurality of beam source furnaces (3) are inclined toward the center of the sample rack (5) and toward the top of the ultra-high vacuum magnetic rod (2).

2. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The beam source furnace (3) comprises a micro-ceramic crucible with a ridge (301), a heating coil (302), an insulating heat shield (303) and an electrical connection pin (304); the micro-ceramic crucible with a ridge (301) is located inside the insulating heat shield (303); the heating coil (302) is wound around the outer wall of the micro-ceramic crucible with a ridge (301); two outlet ends of the heating coil (302) are connected to the electrical connection pin (304) by welding with a tantalum sheet, and extend out of the bottom of the insulating heat shield (303).

3. The ultra-high vacuum multi-source co-deposition device according to claim 2, characterized in that: The micro ceramic crucible with eaves (301) has an inner diameter of less than 1 mm and a depth of 3-8 mm.

4. The ultra-high vacuum multi-source co-deposition device according to claim 2, characterized in that: The heating coil (302) has 20-30 turns and a wire diameter of less than 250 μm.

5. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: Two angle adjustment plates (401) are provided at intervals on one end of the sample holder (4) near the grabbing head, and two hinged plates (402) are provided at intervals on one end near the grabbing head. A first connecting plate and a second connecting plate are provided on both sides of the insulating heat shield (303). The first connecting plate is inserted parallel to the two hinged plates (402) and is hinged to the hinged plates (402) through a hinge shaft. The second connecting plate is inserted parallel to the two angle adjustment plates (401). An arc hole is provided on the angle adjustment plate (401), and a through hole is provided on the second connecting plate. Bolts and nuts are used to penetrate the arc hole and the through hole, and the outer diameters of the bolt heads and the nuts are larger than the diameters of the arc holes.

6. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The sample rack (5) is a star-shaped structure with a plurality of arms extending from the center to the surrounding areas. A limiting hole (501) is provided in the center of the sample rack (5), and sample holder slots (502) compatible with the sample holder (4) are provided on both sides of each arm.

7. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The power socket (6) comprises a base (601), a U-shaped slot (602) and a U-shaped electric contact (603). The base (601) is polygonal. A through hole is provided at the center of the base (601). Two U-shaped slots (602) are provided on each side. The U-shaped slots (602) are connected to the U-shaped electric contact (603).

8. The ultra-high vacuum multi-source co-deposition device according to claim 1, characterized in that: The top end of the ultra-high vacuum magnetic rod (2) is connected to an evaporation source baffle (1).

9. A method for operating the ultra-high vacuum multi-source co-deposition device according to any one of claims 1 to 8, characterized in that: The following processes are included: Filling the required source materials into the micro ceramic crucible with eaves (301), and completing substrate loading; Connecting the sample holder (4) loaded with the beam source furnace (3) to the sample rack (5) of the multi-source co-deposition device; Install the ultra-high vacuum multi-source co-deposition device into the vacuum system, turn on the vacuum maintenance device, and control the system in an ultra-high vacuum environment; Connect the DC power supply to the electrode flange of the ultra-high vacuum magnetic rod (2); Passing current through each heating coil (302) with a heating power of less than 20W to heat and degas each source material; Observe the system vacuum gauge. After the system vacuum is stable, gradually increase the heating DC size to gradually reach the required heating temperature and start co-deposition.

10. The operating method of the ultra-high vacuum multi-source co-deposition device according to claim 9, characterized in that: Before co-deposition, the evaporation source baffle (1) is placed in a shielding state, and when co-deposition begins, the evaporation source baffle (1) is opened.

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