Ion implantation hardening method for gold processing

Abstract

The invention provides an ion implantation hardening method for gold processing, which comprises the following steps: preparing a sample, cleaning and pretreating the gold sample, and removing impurities and pollutants on the surface; equipment debugging: debugging an ion source, an accelerator and a beam transmission system according to the type of injected ions and the required energy; injection: placing the prepared gold sample in a sample processing system, and starting ion injection equipment; in the implantation process, the current and energy parameters of the ion beam need to be closely monitored, the stability and uniformity of implantation are ensured, and the implantation time is controlled according to the required implantation dosage; and post-treatment: after the ion implantation is completed, post-treatment is performed on the gold sample, and the performance of the implanted gold is optimized. According to the method, the gold is subjected to ion implantation, so that the surface performance of the gold can be improved, the surface hardness can be increased, the jewelry can be more wear-resistant, scratches in the daily wearing process are reduced, and the jewelry can be kept attractive for a long time.

Description

Technical Field

[0001] The invention belongs to the technical field of gold processing, and more specifically, particularly relates to an ion implantation hardening method for gold processing. Background Art

[0002] Gold processing refers to the process of processing gold raw materials into various products, such as designing and producing various exquisite jewelry to meet people's decorative needs. Since gold is soft, the hardness of gold jewelry is low. It is easy to get scratches when worn in daily life, and it is difficult to keep the beauty for a long time. Therefore, in view of this, the existing structure and defects are studied and improved, and an ion implantation hardening method for gold processing is provided, in order to achieve a more practical purpose. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides an ion implantation hardening method for gold processing, which is achieved by the following specific technical means:

[0004] A method for ion implantation hardening for gold processing comprises the following steps:

[0005] S1. Sample preparation: cleaning and pretreatment of gold samples to remove surface impurities and contaminants;

[0006] S2. Equipment debugging: debugging the ion source, accelerator and beam transport system according to the type of injected ions and the required energy;

[0007] S3. Injection: Place the prepared gold sample in the sample processing system and start the ion implantation equipment. During the implantation process, closely monitor the current and energy parameters of the ion beam to ensure the stability and uniformity of the implantation, and control the implantation time according to the required dose.

[0008] S4. Post-processing: After the ion implantation is completed, the gold sample is post-processed to optimize the performance of the gold after implantation.

[0009] Furthermore, the equipment in step S2 includes: an ion source system, an accelerator system, a beam transmission and focusing system, and a sample processing system.

[0010] Furthermore, the ion source system is used to generate a stable ion beam, and different ion source materials can be selected as needed; the accelerator system is used to accelerate ions to a suitable energy; the beam transmission and focusing system is used to ensure that the ion beam can be accurately focused on a specific area of ​​the gold sample to ensure the accuracy of injection; the sample processing system is used to fix the gold sample, and can accurately control the position and angle of the sample to achieve uniform ion injection.

[0011] Furthermore, in step S3, the implantation dose is the number of implanted ions per unit area, and as the implantation dose increases, the hardness will increase accordingly.

[0012] Furthermore, in step S4, post-processing includes but is not limited to annealing, heating at an appropriate temperature for a period of time to eliminate lattice defects that may be generated during the ion implantation process.

[0013] Furthermore, the types of ions implanted in step S2 include but are not limited to nitrogen ions and boron ions.

[0014] Furthermore, in step S3, the injection dose is 1×10 16 ~1×10 17 ions / cm 2 .

[0015] Furthermore, in step S3, the injection energy is 50-100 keV.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] The present invention can improve the surface properties of gold and increase the surface hardness by performing ion implantation on gold, thereby making the jewelry more wear-resistant, reducing scratches during daily wear, and enabling it to maintain its beauty for a long time, while enhancing its corrosion resistance. Although gold itself has stable chemical properties, it may still be slightly corroded under some complex environmental conditions. Ion implantation can form a special protective film on the surface of gold, further improving its corrosion resistance. In addition, the surface color can be changed after ion implantation, creating more novel and unique colors for gold to meet different aesthetic and design requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 The present invention is a flow chart of the ion implantation hardening method for gold processing. DETAILED DESCRIPTION

[0019] The following embodiments of the present invention are described in further detail in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0020] Example:

[0021] As attached Figure 1 As shown:

[0022] The present invention provides an ion implantation hardening method for gold processing, comprising the following steps:

[0023] S1. Sample preparation: cleaning and pretreatment of gold samples to remove surface impurities and contaminants;

[0024] S2. Equipment debugging: debugging the ion source, accelerator and beam transport system according to the type of injected ions and the required energy;

[0025] S3. Injection: Place the prepared gold sample in the sample processing system and start the ion implantation equipment. During the implantation process, closely monitor the current and energy parameters of the ion beam to ensure the stability and uniformity of the implantation, and control the implantation time according to the required dose.

[0026] S4. Post-processing: After the ion implantation is completed, the gold sample is post-processed to optimize the performance of the gold after implantation.

[0027] The equipment in step S2 includes: an ion source system, an accelerator system, a beam transmission and focusing system, and a sample processing system.

[0028] Among them, the ion source system is used to generate a stable ion beam, and different ion source materials can be selected according to needs; the accelerator system is used to accelerate ions to a suitable energy; the beam transmission and focusing system is used to ensure that the ion beam can be accurately focused on a specific area of ​​the gold sample to ensure the accuracy of injection; the sample processing system is used to fix the gold sample, and can accurately control the position and angle of the sample to achieve uniform ion injection.

[0029] In step S3, the implantation dose is the number of implanted ions per unit area. As the implantation dose increases, the hardness will increase accordingly.

[0030] Wherein, in step S4, post-processing includes but is not limited to annealing treatment, heating at an appropriate temperature for a period of time to eliminate lattice defects that may be generated during the ion implantation process.

[0031] The types of ions implanted in step S2 include but are not limited to nitrogen ions and boron ions.

[0032] The injection dose in step S3 is 1×10 16 ~1×10 17 ions / cm 2 .

[0033] Wherein, in step S3, the injection energy is 50-100 keV.

[0034] The working principle of this embodiment:

[0035] Ion generation, first of all, needs to convert the injected ion source material into ionic state. For ion implantation of gold, the possible ion sources are nitrogen ions (N + ), boron ion (B +) etc. These ion source materials usually exist in the form of gas, and the gas is ionized by ion source equipment (such as plasma source) using radio frequency (RF) or direct current (DC) discharge to produce the required ions. For example, for nitrogen ion implantation, nitrogen (N2) is introduced into the ion source equipment. Under the ionization effect, the N2 molecules will decompose and ionize into N + ion.

[0036] Ion acceleration, where the ions are then accelerated to a certain energy, is achieved by an accelerator, which uses an electric field to accelerate the ions. The energy of the ions determines how deeply and how well they are implanted into the gold. Generally, the acceleration voltage can range from a few thousand volts to several million volts. A higher acceleration voltage results in ions with higher energy, which can be implanted deeper into the gold.

[0037] During the ion implantation process, the accelerated ion beam is focused and directed to the surface of the gold sample. When the ions hit the gold surface, they penetrate the gold lattice structure, collide with gold atoms and are captured in the lattice position inside the gold, thereby changing the physical and chemical properties of the gold surface.

[0038] Factors affecting the degree of hardness enhancement:

[0039] 1. The type of implanted ions. Different ions have different effects on the hardness of gold after being implanted. For example, nitrogen ions (N + ) is injected into gold, nitrogen atoms form interstitial atoms or replacement atoms in the gold lattice. The radius of nitrogen atoms is smaller than that of gold atoms, and its presence in the lattice causes lattice distortion. This lattice distortion hinders dislocation movement, thereby increasing hardness. In contrast, if boron ions (B + ), because the properties of boron atoms are different from those of nitrogen atoms, the way and degree of their influence on the gold lattice will also be different, and the effect of improving hardness will also be different.

[0040] 2. Implantation dose. The implantation dose refers to the number of implanted ions per unit area. Generally speaking, as the implantation dose increases, the hardness will increase accordingly. At low doses, the implanted ions are dispersed in the gold lattice, and the impact on the lattice is relatively small, so the hardness improvement is not obvious. When the implantation dose reaches a certain level, more ions will cause more serious lattice distortion, dislocation movement will be more hindered, and the hardness will increase significantly. For example, when the nitrogen ion implantation dose increases from 1×1015ions / cm 2 Increased to 1×1017ions / cm 2 When gold is heated, its hardness may increase from about HV (Vickers hardness) 100 to about HV150-180 (the data here are only approximate examples, and the actual situation may vary depending on many factors).

[0041] 3. Injection energy. The injection energy determines the depth of ion implantation into gold. Higher injection energy means that the ions can penetrate deeper into the gold. When the injection energy is moderate, the ions can form an effective lattice distortion area at a suitable depth inside the gold, thereby improving the hardness. If the injection energy is too low, the ions can only stay in the shallow layer of the gold surface, and the improvement of the overall hardness is limited; if the injection energy is too high, the ions may penetrate the gold sample or cause excessive lattice damage in the deep layer, which is not conducive to the stable improvement of hardness.

[0042] Approximate range of hardness enhancement:

[0043] In general, it is difficult to give a very precise value for the improvement of gold hardness after ion implantation because it is affected by a variety of factors. Generally speaking, the hardness can be increased by 10%-200%. In some ideal cases, when the appropriate ion type (such as nitrogen ions) and the appropriate implantation dose (such as 1×10 16 -1×10 17 ions / cm 2 ) and the injection energy (such as 50-100keV), the hardness of gold may increase by about 100%-200%. For example, the hardness of gold with a Vickers hardness of HV100 may reach HV200-HV300 after ion implantation. However, if the conditions are not properly controlled, the hardness may only increase by 10%-30%, that is, the hardness increases from HV100 to about HV110-HV130.

[0044] It should be emphasized that the actual degree of hardness enhancement needs to be accurately measured based on factors such as the specific ion implantation process parameters and the initial state of gold.

[0045] The embodiments of the present invention are given for the purpose of illustration and description, and are not intended to be exhaustive or to limit the invention to the disclosed forms. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the present invention and to enable those of ordinary skill in the art to understand the present invention and thereby design various embodiments with various modifications suitable for specific uses.

Claims

1. A method for ion implantation hardening for gold processing, characterized in that: The steps include: S1. Sample preparation: cleaning and pretreatment of gold samples to remove surface impurities and contaminants; S2. Equipment debugging: debugging the ion source, accelerator and beam transport system according to the type of injected ions and the required energy; S3. Injection, placing the prepared gold sample in the sample processing system and starting the ion implantation device; During the implantation process, the current and energy parameters of the ion beam should be closely monitored to ensure the stability and uniformity of the implantation, and the implantation dose and implantation time should be controlled according to the required amount; S4. Post-processing: After the ion implantation is completed, the gold sample is post-processed to optimize the performance of the gold after implantation.

2. The ion implantation hardening method for gold processing as claimed in claim 1, characterized in that: The equipment in step S2 includes: an ion source system, an accelerator system, a beam transmission and focusing system, and a sample processing system.

3. The ion implantation hardening method for gold processing as claimed in claim 2, characterized in that: The ion source system is used to generate a stable ion beam, and different ion source materials can be selected according to needs; the accelerator system is used to accelerate ions to a suitable energy; the beam transmission and focusing system is used to ensure that the ion beam can be accurately focused on a specific area of ​​the gold sample to ensure the accuracy of injection; the sample processing system is used to fix the gold sample, and can accurately control the position and angle of the sample to achieve uniform ion injection.

4. The ion implantation hardening method for gold processing as claimed in claim 1, characterized in that: In step S3, the implantation dose is the number of implanted ions per unit area. As the implantation dose increases, the hardness will increase accordingly.

5. The ion implantation hardening method for gold processing as claimed in claim 1, characterized in that: In step S4, post-processing includes but is not limited to annealing, heating at an appropriate temperature for a period of time to eliminate lattice defects that may be generated during the ion implantation process.

6. The ion implantation hardening method for gold processing as claimed in claim 1, characterized in that: The types of ions implanted in step S2 include, but are not limited to, nitrogen ions and boron ions.

7. The ion implantation hardening method for gold processing as claimed in claim 6, characterized in that: The injection dose in step S3 is 1×10 16 ~1×10 17 ions / cm 2 .

8. The ion implantation hardening method for gold processing as claimed in claim 1, characterized in that: In step S3, the implantation energy is 50-100 keV.

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