Vapor deposition apparatus and thin film growth method

Abstract

The invention provides a vapor deposition apparatus and a thin film growing method. The vapor deposition apparatus comprises: a reaction chamber; the base is arranged at the bottom of the reaction cavity, and the upper surface of the base is used for bearing a substrate; the top cover is arranged at the top of the reaction cavity, is provided with a gas spraying mechanism and provides at least one reaction gas for the reaction cavity; the top lining is positioned at the lower part of the top cover and is used for protecting the top cover; and the first lifting driving mechanism is connected with the top lining and is used for driving the top lining to move between a process position and a cleaning position. The top lining cleaning device is used for solving the problem that a top lining cannot be cleaned thoroughly in the prior art.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a vapor deposition device and a thin film growth method. Background Art

[0002] In the current vapor deposition equipment, the reaction chamber includes a chamber body and a top cover. The top cover is equipped with a gas spray mechanism. A tray for carrying substrates is provided in the reaction chamber. A rotating mechanism is fixedly installed on the bottom plate of the chamber. The rotating mechanism drives the tray to rotate. In order to improve production efficiency and uniformity, multiple substrates are evenly distributed on the tray. Each time the material is loaded and unloaded, the substrate is picked up and placed by the robot moving the tray in and out.

[0003] In order to meet the uniformity requirements between various substrates, the reaction gas from the gas spray mechanism needs to be uniformly passed through the upper surface of the substrate in a laminar flow, which requires the reaction area to be a closed environment.

[0004] Generally, a closed environment is formed by the top liner, the side liner (pump liner), the tray and the gas spray mechanism. The current topliner is installed under the top cover and is fixed. When the reaction area is cleaned with chlorine, the deposits attached to the topliner cannot be completely cleaned due to the low temperature at the topliner. When the deposits reach a certain level, the cavity needs to be opened and the topliner needs to be removed for cleaning. Summary of the invention

[0005] The purpose of the present invention is to provide a vapor deposition device and a thin film growth method to solve the problem of unclean top lining cleaning in the prior art.

[0006] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0007] A vapor deposition device, comprising:

[0008] Reaction chamber;

[0009] A base, arranged at the bottom of the reaction chamber, and having an upper surface for carrying a substrate;

[0010] A top cover, disposed on the top of the reaction chamber, provided with a gas spraying mechanism to provide at least one reaction gas to the reaction chamber;

[0011] A top lining, located at the lower part of the top cover, for protecting the top cover;

[0012] The first lifting drive mechanism is connected to the top liner and is used to drive the top liner to move between a process position and a cleaning position.

[0013] Optionally, a purge gas is introduced into the space between the top cover and the top liner.

[0014] Optionally, the purge gas is at least one of nitrogen or argon, which is used to achieve temperature regulation of the top lining.

[0015] Optionally, in the cleaning position, the pressure of the purge gas in the space between the top cover and the top liner is greater than the pressure of the reaction chamber.

[0016] Optionally, the vapor deposition apparatus further comprises a side wall lining, which is arranged around the inner wall of the reaction chamber, and the top lining maintains a sealed connection with the side wall lining when moving between the process position and the cleaning position.

[0017] Optionally, the diameter of the top lining is less than or equal to the inner diameter of the side wall lining, and the top lining moves up and down along the inner wall of the side wall lining.

[0018] Optionally, the diameter of the top lining is less than or equal to the inner diameter of the side wall lining, and the side wall lining moves together with the top lining.

[0019] Optionally, the diameter of the top lining is greater than or equal to the inner diameter of the side wall lining, and the side wall lining moves together with the top lining.

[0020] Optionally, the vapor deposition device further comprises an exhaust ring which is arranged around the base, the side wall lining abuts against the exhaust ring, and the exhaust ring can move up and down.

[0021] Optionally, a spring clamping mechanism is provided between the pumping ring and the bottom wall of the reaction chamber, and the spring clamping mechanism supports the pumping ring.

[0022] Optionally, the vapor deposition device further includes a second lifting drive mechanism, which is connected to the pumping ring and is used to drive the pumping ring to rise and fall.

[0023] Optionally, the air pumping ring, the side wall lining and the top lining remain sealed and connected during the movement.

[0024] Optionally, there are multiple second lifting drive mechanisms, which are evenly distributed along the circumferential direction.

[0025] Optionally, the second lifting drive mechanism is sealed and connected to the reaction chamber via a bellows.

[0026] Optionally, there are multiple first lifting drive mechanisms, which are evenly distributed along the circumferential direction.

[0027] Optionally, the first lifting drive mechanism is sealed and connected to the top cover via a bellows.

[0028] Optionally, the material of the top lining is quartz, or graphite with an anti-corrosion layer coated on the surface.

[0029] A thin film growth method, comprising:

[0030] Placing a substrate on a susceptor in a vapor deposition apparatus as described above;

[0031] Controlling the top liner to be located at the process position, delivering reaction gas into the reaction chamber, and growing a thin film on the substrate;

[0032] Taking out the processed substrate, controlling the top liner to descend to the cleaning position, delivering cleaning gas into the reaction chamber, and cleaning the reaction chamber;

[0033] After cleaning is completed, the top liner is controlled to rise to the process position.

[0034] Optionally, the cleaning gas includes chlorine.

[0035] Optionally, the method of controlling the top liner to descend to the cleaning position and ascend to the process position comprises:

[0036] The first lifting drive mechanism and the second lifting drive mechanism are synchronously controlled to make the top lining, the side wall lining and the air extraction ring rise and fall synchronously.

[0037] Compared with the prior art, the present invention has the following advantages:

[0038] The vapor deposition device and thin film growth method provided by the present invention drive the top lining to move between a process position and a cleaning position by a first lifting drive mechanism, and the cleaning position is closer to the base. The top lining is subject to increased thermal radiation from the base, and the temperature rises, so that the top lining can be maintained at a higher temperature, thereby helping the cleaning gas to clean the polymer deposited on the lower surface of the top lining. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0040] Figure 1 It is a structural diagram of a vapor deposition device in the prior art;

[0041] Figure 2 , Figure 3A structural diagram of a vapor deposition device provided in the first embodiment of the present invention, wherein: Figure 2 The middle top lining is located in the process position, Figure 3 The mid-top liner is in the clean position;

[0042] Figure 4 for Figure 2 A cross-sectional view of a vapor deposition apparatus is shown;

[0043] Figure 5 A structural diagram of a vapor deposition device provided for a second embodiment of the present invention;

[0044] Figure 6 for Figure 5 Partial view at X in the middle;

[0045] Figure 7 A flow chart of a thin film growth method provided by one embodiment of the present invention. DETAILED DESCRIPTION

[0046] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the accompanying drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0047] Figure 1A schematic diagram of the structure of a vapor deposition device is shown, and the vapor deposition device is a MOCVD (metal vapor deposition) device. A base 2 is provided at the bottom of the reaction chamber 1, and the upper surface of the base 2 is used to carry a substrate tray. A top cover 3 is provided on the top of the reaction chamber 1, and a gas spray mechanism 4 is provided on the top cover 3. The gas spray mechanism is used to provide process gas into the reaction chamber to achieve thin film vapor deposition on the surface of the substrate. After a batch of substrates are processed, the gas spray mechanism 4 also needs to pass a clean gas such as chlorine into the reaction area A of the reaction chamber 1 to clean the deposited polymer (such as gallium nitride, aluminum nitride, etc.) in the reaction area A. Usually, the material of the top cover 3 is a metal material such as stainless steel, which is easily corroded by the clean gas. Therefore, a top lining 5 is provided on the lower surface of the top cover 3 to protect the top cover 3. However, in the prior art, when cleaning, the temperature of the top lining 3 is low and it cannot be completely cleaned.

[0048] Based on this, the present invention provides a vapor deposition device, comprising a first lifting drive mechanism connected to the top liner, the first lifting drive mechanism can drive the top liner to move between a process position and a cleaning position, the cleaning position is close to the base, when the reaction area needs to be cleaned, the first lifting drive mechanism lowers the top liner to the cleaning position, the top liner is increased by the heat radiation of the base, the temperature rises, so that the top liner is at a higher temperature, so that the deposited polymer thereon can be cleaned.

[0049] Figure 2 , 3 4 shows a schematic diagram of the structure of a vapor deposition device provided by an embodiment of the present invention, and the vapor deposition device is a MOCVD (metal vapor deposition) device. Of course, the vapor deposition device provided by the present invention is not limited to this, and can also be other types of vapor deposition devices.

[0050] like Figure 2 , 3 As shown in Figure 4, the vapor deposition device includes: a reaction chamber 100; a base 200, which is arranged at the bottom of the reaction chamber 100, and its upper surface is used to carry the substrate. Specifically, the base 200 is rotatable, and a plurality of rotatable trays 210 are arranged on its upper surface, and the substrates are placed on the trays 210; a top cover 300, which is arranged at the top of the reaction chamber 100, and is provided with a gas spray mechanism 400, which provides at least one reaction gas to the reaction chamber 100. During the process, the reaction gas vertically enters the gas spray mechanism 400 and flows out horizontally from the gas spray mechanism. The direction of the gas flow is as shown in Figure 4. Figure 2As shown by the dashed arrow; the top liner 500 is located at the lower part of the top cover 300, covers most of the bottom surface of the top cover 300, and is used to protect the top cover 300; the first lifting drive mechanism 600 is connected to the top liner 500, and is used to drive the top liner 500 to move between a process position and a cleaning position. Optionally, the material of the top liner 500 can usually be quartz, or graphite with an anti-corrosion layer on the surface, and the anti-corrosion layer can be silicon carbide.

[0051] Figure 2 The top liner 500 is shown in a process position, Figure 3 The top lining 500 is shown to be in a cleaning position, which is lower than the process position. Therefore, in the cleaning position, the top lining 500 is closer to the base 200, and the top lining 500 can be kept at a higher temperature through the thermal radiation of the base 200, thereby helping the cleaning gas to clean the polymer deposited on the lower surface of the top lining 500.

[0052] To maintain the vacuum state in the reaction chamber, the first lifting drive mechanism 600 is sealed and connected to the top cover 300 via a bellows G. Specifically, an opening is provided on the top cover 300, and the first lifting drive mechanism 600 passes through the opening and is connected to the top liner 500. The bellows G is arranged around the outside of the opening on the top cover 300, one end of which is sealed and connected to the upper surface of the top cover 300, and the other end is sealed and connected to the first lifting drive mechanism 600.

[0053] In this embodiment, the vapor deposition device also includes a side wall lining 700, which is arranged around the inner wall of the reaction chamber 100 to protect the inner wall of the reaction chamber 100. The top lining 500 maintains a sealed connection with the side wall lining 700 when moving between the process position and the cleaning position to prevent the reaction gas or cleaning gas in the reaction area A from leaking out of the reaction area A from the connection between the top lining 500 and the side wall 700, thereby corroding the top cover 300 and the inner wall of the reaction chamber 100.

[0054] In this embodiment, the diameter of the top lining 500 is greater than or equal to the inner diameter of the side wall lining 700, and the side wall lining 700 moves with the top lining 500. The top lining 500 and the side wall lining 700 can be an integrated structure, and the first lifting drive mechanism 600 drives the top lining 500 and the side wall lining 700 to move simultaneously. The top lining 500 and the side wall lining 700 can also be two separate parts. When the cavity is closed, the top lining 500 covers the top of the side wall lining 700. When the first lifting drive mechanism 600 drives the top lining 500 to move, the side wall lining 700 needs to move synchronously to maintain a sealed connection with the top lining 500. In order to ensure the stability of the lifting of the top lining 500, the first lifting drive mechanism 600 can be multiple, evenly distributed along the circumference of the top lining 500.

[0055] Specifically, the vapor deposition device is further provided with an exhaust ring 800, which is arranged around the base 200, and the exhaust ring 800 is provided with a plurality of exhaust holes for exhausting the gas in the reaction chamber 100. The side wall liner 700 is against the exhaust ring 800 below, and a sealed connection is formed between the two, and the exhaust ring 800 can move up and down. When the first lifting drive mechanism 600 drives the top liner 500 to move, the exhaust ring 800 and the side wall liner 700 move up and down synchronously, and the exhaust ring 800, the side wall liner 700 and the top liner 500 maintain a sealed connection during the movement.

[0056] In one implementation, Figure 2As shown, the vapor deposition apparatus further includes a second lifting drive mechanism 900, which is connected to the pumping ring 800 and is used to drive the pumping ring 800 to rise and fall. The second lifting drive mechanism 900 can be disposed at a suitable position of the bottom wall or side wall of the reaction chamber 100. The second lifting drive mechanism 900 supports the exhaust ring 800 and the side wall liner 700 at a predetermined position. After the cavity is closed, the top liner 500 covers the side wall liner 700 and maintains a sealed connection with the side wall liner 700. At this time, the top liner 500 is in the process position. When cleaning is required, the first lifting drive mechanism 600 and the second lifting drive mechanism 900 can be synchronously controlled to make the top liner 500, the side wall liner 700 and the exhaust ring 800 descend synchronously until the top liner 500 descends to the cleaning position. After cleaning is completed, the first lifting drive mechanism 600 and the second lifting drive mechanism 900 continue to be synchronously controlled to make the top liner 500, the side wall liner 700 and the exhaust ring 800 rise synchronously until the top liner 500 rises to the process position. It should be noted that during the synchronous rise and fall process, the top liner 500, the side wall liner 700 and the exhaust ring 800 are all kept in a sealed connection. In this embodiment, in order to maintain the vacuum state in the reaction chamber 100, the second lifting drive mechanism 900 is sealed and connected to the bottom wall or side wall of the reaction chamber 100 through a bellows G. Specifically, an opening is provided on the bottom wall or side wall of the reaction chamber 100, and the second lifting drive mechanism 900 is connected to the pumping ring 800 through the opening. The bellows G is arranged around the outside of the opening on the bottom wall or side wall, one end of which is sealed and connected to the bottom wall or side wall, and the other end is sealed and connected to the second lifting drive mechanism 900. In order to ensure the stability of the lifting of the pumping ring 800, the second lifting drive mechanism 900 can be multiple and evenly distributed along the circumference of the pumping ring 800.

[0057] In another implementation, a spring clamping mechanism is provided between the pumping ring 800 and the bottom wall of the reaction chamber 100, and the spring clamping mechanism supports the pumping ring 800. After the chamber is closed, the top liner 500 covers the top of the side wall liner 700 and applies a certain pressure to the side wall liner 700, pressing the spring clamping mechanism below the pumping ring 800 so that the spring clamping mechanism is in a compressed state, and the spring clamping mechanism applies a corresponding upward elastic force to the pumping ring 800, so that the pumping ring 800, the side wall liner 700 and the top liner 500 maintain a sealed connection. At this time, the top liner 500 is in the process position; when it is necessary to clean the reaction area A, the first lifting drive mechanism 600 drives the top liner 500 to move upward. The vacuum ring 800 moves downward to the cleaning position, and continues to squeeze the spring clamping mechanism by moving downward, so that the vacuum ring 800, the side wall lining 700 and the top lining 500 remain sealed and connected during the movement; when the cleaning is completed, the first lifting drive mechanism 600 drives the top lining 500 to move upward to the process position, and the upward force of the spring clamping mechanism causes the vacuum ring 800 and the side wall lining 700 to move upward synchronously, and the vacuum ring 800, the side wall lining 700 and the top lining 500 remain sealed and connected during the movement.

[0058] In this embodiment, when in the process position, there is a space S ( Figure 2 (not shown in the figure), when in the cleaning position, the space S becomes larger. During the process and the cleaning process, a purge gas is continuously introduced into the space S, and the purge gas can be at least one of nitrogen or argon to achieve temperature regulation of the top liner 500. The top liner 500 is temperature-controlled by the flow of the purge gas to achieve uniform temperature. In addition, the pressure of the purge gas in the space S can be controlled to be greater than the pressure of the reaction chamber 100 in the cleaning position to prevent the cleaning gas from entering the space S and avoid corrosion of the top cover 300.

[0059] Figure 5The schematic diagram of the structure of the vapor deposition device provided by another embodiment of the present invention is shown. In this embodiment, the diameter of the top liner 500 is less than or equal to the inner diameter of the side wall liner 700, and the top liner 500 moves up and down along the inner wall of the side wall liner 700. In this embodiment, the side wall liner 700 does not need to move up and down. Optionally, the diameter of the top liner 500 is slightly smaller than the inner diameter of the side wall liner 700, so that the top liner 500 can slide smoothly along the side wall liner 700. Further, the purge gas is introduced into the space between the top liner 500 and the top cover 300, and the pressure of the purge gas in the space is controlled to be greater than the pressure of the reaction chamber 100 at the cleaning position, which can prevent the clean gas from entering the space through the gap between the top liner 500 and the side wall liner 700, causing the clean gas to leak. In this embodiment, only the first lifting drive mechanism 600 can be set for the top liner, and the second lifting drive mechanism 900 is not set to simplify the equipment structure.

[0060] In other embodiments, the diameter of the top liner 500 is less than or equal to the inner diameter of the sidewall liner 700, and the sidewall liner 700 moves with the top liner 500. Figure 6 As shown, the top of the side wall lining 700 is provided with an annular shielding portion 710 extending toward the center. During the up and down movement, the annular shielding portion 710 contacts the upper surface of the top lining 500 to maintain a sealed connection between the top lining 500 and the side wall lining 700. Figure 2Similar to the embodiment shown, the side wall liner 700 is against the air pumping ring 800 below, and a sealed connection is formed between the two, and the air pumping ring 800 can move up and down. When the first lifting drive mechanism 600 drives the top liner 500 to move, the air pumping ring 800 and the side wall liner 700 move up and down synchronously, and the air pumping ring 800, the side wall liner 700 and the top liner 500 maintain a sealed connection during the movement. Specifically, the air pumping ring 800 can be driven down by the second lifting drive mechanism 900. At this time, the side wall liner 700 descends with the air pumping ring 800 under the action of gravity. The second lifting drive mechanism 900 and the first lifting drive mechanism 600 are synchronously controlled, so that the side wall liner 700, the air pumping ring 800 and the top liner 500 are synchronously descended, and the annular shielding portion 710 maintains contact with the upper surface of the top liner 500. When the first lifting drive mechanism 600 drives the top liner 500 to rise, the second lifting drive mechanism 900 synchronously drives the pumping ring 800 and the side wall liner 700 to rise. During the rising process, the annular shielding portion 710 maintains contact with the upper surface of the top liner 500. Furthermore, in this embodiment, the purge gas is introduced into the space between the top liner 500 and the top cover 300, and the pressure of the purge gas in the space is controlled to be greater than the pressure of the reaction chamber 100 at the cleaning position, so as to prevent the clean gas from entering the space through the gap between the top liner 500 and the side wall liner 700, causing the clean gas to leak.

[0061] Based on the same inventive concept, the present invention also provides a thin film growth method, such as Figure 7 As shown, the following steps are included:

[0062] S1, placing a substrate on a susceptor in the vapor deposition apparatus as described above;

[0063] S2, controlling the top liner to be located at the process position, delivering reaction gas into the reaction chamber, and growing a thin film on the substrate;

[0064] S3, taking out the processed substrate, controlling the top liner to descend to the cleaning position, delivering a cleaning gas into the reaction chamber, and cleaning the reaction chamber;

[0065] S4, after cleaning is completed, controlling the top lining to rise to the process position.

[0066] Wherein, the cleaning gas includes chlorine. During the thin film growth process in step S2, a polymer, usually gallium nitride, aluminum nitride, etc., is deposited in the reaction chamber, and chlorine can be used to clean the polymer. Since the top liner is lowered to a cleaning position closer to the base, the top liner can be maintained at a higher temperature, so the top liner can be cleaned by chlorine.

[0067] The method for controlling the top liner to descend to the cleaning position and ascend to the process position includes: synchronously controlling the first lifting drive mechanism and the second lifting drive mechanism to synchronously lift the top liner, the side wall liner and the exhaust ring. For details, please refer to the relevant description above and will not be repeated here.

[0068] In summary, the vapor deposition device and thin film growth method provided by the present invention drive the top lining to move between the process position and the cleaning position through the first lifting drive mechanism, and the cleaning position is closer to the base. The top lining is subject to increased thermal radiation from the base, and the temperature rises, so that the top lining can be maintained at a higher temperature, thereby helping the cleaning gas to clean the polymer deposited on the lower surface of the top lining.

[0069] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0070] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A vapor deposition device, characterized in that: include: Reaction chamber; A base, arranged at the bottom of the reaction chamber, and having an upper surface for carrying a substrate; A top cover, disposed on the top of the reaction chamber, provided with a gas spraying mechanism to provide at least one reaction gas to the reaction chamber; A top lining, located at the lower part of the top cover, for protecting the top cover; The first lifting drive mechanism is connected to the top liner and is used to drive the top liner to move between a process position and a cleaning position.

2. The vapor deposition device according to claim 1, characterized in that: A purge gas is introduced into the space between the top cover and the top liner.

3. The vapor deposition device according to claim 4, characterized in that: The purge gas is at least one of nitrogen or argon, and is used to achieve temperature regulation of the top liner.

4. The vapor deposition apparatus according to claim 4, characterized in that: In the cleaning position, a pressure of the purge gas in a space between the top cover and the top liner is greater than a pressure of the reaction chamber.

5. The vapor deposition apparatus according to claim 1, characterized in that: A side wall liner is also included, which is arranged around the inner wall of the reaction chamber, and the top liner maintains a sealed connection with the side wall liner when moving between the process position and the cleaning position.

6. The vapor deposition apparatus according to claim 5, characterized in that: The diameter of the top lining is smaller than or equal to the inner diameter of the side wall lining, and the top lining moves up and down along the inner wall of the side wall lining.

7. The vapor deposition apparatus according to claim 5, characterized in that: The diameter of the top liner is smaller than or equal to the inner diameter of the side wall liner, and the side wall liner moves together with the top liner.

8. The vapor deposition apparatus according to claim 5, characterized in that: The diameter of the top liner is greater than or equal to the inner diameter of the side wall liner, and the side wall liner moves together with the top liner.

9. The vapor deposition device according to claim 7 or 8, characterized in that: It also includes an air pumping ring, which is arranged around the base. The side wall lining is against the air pumping ring, and the air pumping ring can move up and down.

10. The vapor deposition apparatus according to claim 9, characterized in that: A spring pressing mechanism is arranged between the pumping ring and the bottom wall of the reaction chamber, and the spring pressing mechanism supports the pumping ring.

11. The vapor deposition apparatus according to claim 9, characterized in that: It also includes a second lifting drive mechanism, which is connected to the air pumping ring and is used to drive the air pumping ring to move up and down.

12. The vapor deposition apparatus according to claim 9, characterized in that: The pumping ring, the side wall liner and the top liner remain sealed and connected during the movement.

13. The vapor deposition apparatus according to claim 11, characterized in that: There are multiple second lifting drive mechanisms, which are evenly distributed along the circumferential direction.

14. The vapor deposition apparatus according to claim 11, characterized in that: The second lifting drive mechanism is sealed and connected to the reaction chamber via a bellows.

15. The vapor deposition apparatus according to claim 1, characterized in that: There are multiple first lifting drive mechanisms, which are evenly distributed along the circumferential direction.

16. The vapor deposition apparatus according to claim 1, characterized in that: The first lifting drive mechanism is sealed and connected to the top cover via a bellows.

17. The vapor deposition apparatus according to claim 1, characterized in that: The material of the top lining is quartz, or graphite with an anti-corrosion layer coated on the surface.

18. A thin film growth method, characterized in that: include: Placing a substrate on a susceptor in a vapor deposition apparatus as claimed in any one of claims 1 to 17; Controlling the top liner to be located at the process position, delivering reaction gas into the reaction chamber, and growing a thin film on the substrate; Taking out the processed substrate, controlling the top liner to descend to the cleaning position, delivering cleaning gas into the reaction chamber, and cleaning the reaction chamber; After cleaning is completed, the top liner is controlled to rise to the process position.

19. The thin film growth method according to claim 18, characterized in that: The cleaning gas includes chlorine gas.

20. The thin film growth method according to claim 18, characterized in that: The method of controlling the top liner to descend to the cleaning position and ascend to the process position comprises: The first lifting drive mechanism and the second lifting drive mechanism are synchronously controlled to make the top lining, the side wall lining and the air extraction ring rise and fall synchronously.

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