Method for forming film layer by using recovered gas

Abstract

The invention provides a method for forming a film layer by using recovered gas. First, a reactor is provided. Then, tail gas generated after the reaction for forming the film layer in the reaction chamber of the reactor is collected. The collected tail gas is then purified to obtain a purified precursor. And then, the purified precursor is conveyed to a reaction chamber. The method for forming the film layer by using the recovered gas provided by the invention can reduce the process cost.

Description

Technical Field

[0001] The present disclosure relates to a method for forming a film layer by using recycled gas, and more particularly to a method for forming a film layer by using recycled gas in a metal-organic chemical vapor deposition (MOCVD) process. Background Art

[0002] In the metal-organic chemical vapor deposition (MOCVD) process, most of the precursors provided to the reaction chamber are not deposited on the substrate after the reaction, and these unreacted precursors will be directly extracted from the reaction chamber to form tail gas and be discharged. In other words, most of the precursors including rare metals are not effectively used in the MOCVD process, which increases the process cost. Summary of the invention

[0003] Some embodiments of the present disclosure are directed to a method for forming a film layer using recycled gas, which can reduce process costs.

[0004] According to some embodiments of the present disclosure, the method for forming a film layer using recycled gas includes the following steps. First, a reactor is provided. Then, the tail gas generated after the reaction of forming the film layer in the reaction chamber of the reactor is collected. Thereafter, the collected tail gas is purified to obtain a purified precursor. Then, the purified precursor is transferred to the reaction chamber.

[0005] Based on this, the method of forming a film layer using recycled gas provided in the present disclosure can recycle the unreacted tail gas in the reaction, and the precursor obtained after purifying the tail gas can be transferred to the reaction chamber again for reaction. The present disclosure can reduce the amount of reaction precursor used to reduce process costs.

[0006] In order to make the above features and advantages of the present disclosure more obvious and understandable, embodiments are given below with reference to the accompanying drawings for detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1A is a schematic diagram of a reactor according to a first embodiment of the present disclosure;

[0008] Figure 1B for Figure 1A A partial cross-sectional schematic diagram of an embodiment of a recovery chamber in a reactor;

[0009] Figure 1C To use Figure 1A A partial schematic diagram of a semiconductor device of an embodiment formed by a reactor;

[0010] Figure 1D Show Figure 1C A partial schematic diagram of an embodiment of a semiconductor film layer of a semiconductor element in the embodiment;

[0011] Figure 1E Show Figure 1C A partial schematic diagram of another embodiment of a semiconductor film layer of a semiconductor element in the embodiment;

[0012] Figure 2 A schematic diagram of a process for forming a film layer by using recycled gas in a semiconductor process according to an embodiment of the present disclosure;

[0013] Figure 3 is a schematic diagram of a reactor according to a second embodiment of the present disclosure;

[0014] Figure 4 is a schematic diagram of a reactor according to a third embodiment of the present disclosure;

[0015] Figure 5 is a schematic diagram of a reactor according to a fourth embodiment of the present disclosure;

[0016] Figure 6 is a schematic diagram of a reactor according to a fifth embodiment of the present disclosure;

[0017] Figure 7 is a schematic diagram of a reactor according to a sixth embodiment of the present disclosure;

[0018] Figure 8 is a schematic diagram of a reactor according to a seventh embodiment of the present disclosure;

[0019] Fig. 9 is a schematic diagram of a reactor according to an eighth embodiment of the present disclosure;

[0020] Fig. 10A To use Figure 1A A schematic flow diagram of an embodiment of treating tail gas in a recovery chamber in a reactor;

[0021] Fig. 10B To use Figure 1A A schematic flow chart of another embodiment of treating tail gas in a recovery chamber in a reactor;

[0022] Fig. 10C To use Figure 1A A schematic flow chart of another embodiment of treating tail gas in a recovery chamber in a reactor;

[0023] Fig. 10D To use Figure 1A A schematic flow chart of another embodiment of treating tail gas in a recovery chamber in a reactor. DETAILED DESCRIPTION

[0024] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0025] The present disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the understanding of the readers and the simplicity of the drawings, the multiple drawings in the present disclosure only depict a portion of the electronic device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not intended to limit the scope of the present disclosure.

[0026] Certain words are used throughout the specification and the claims that follow to refer to specific components. It will be understood by those skilled in the art that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, words such as "include", "contain", "have" are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and / or "have" are used in the description of the present disclosure, they specify the presence of corresponding features, regions, steps, operations and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations and / or components.

[0027] Directional terms mentioned herein, such as "up", "down", "front", "back", "left", "right", etc., are only with reference to the directions of the accompanying drawings. Therefore, the directional terms used are for illustration and not for limiting the present disclosure. In the accompanying drawings, each figure shows the general characteristics of the methods, structures and / or materials used in a particular embodiment. However, these drawings should not be interpreted as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative size, thickness and position of each film layer, region and / or structure may be reduced or enlarged.

[0028] When a corresponding component (such as a film layer or region) is referred to as being "on another component", it may be directly on the other component, or other components may exist between the two. On the other hand, when a component is referred to as being "directly on another component", there is no component between the two unless otherwise specified in the specification. In addition, when a component is referred to as being "on another component", the two have a vertical relationship in the top view direction, and the component may be above or below the other component, and this vertical relationship depends on the orientation of the device.

[0029] The terms "equal to" or "same as", "substantially" or "approximately" are generally interpreted as within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0030] The ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify the elements. They do not imply or represent any previous ordinal numbers of the element (or elements), nor do they represent the order of one element and another element, or the order of the manufacturing method. The use of these ordinal numbers is only used to make the element with a certain name clearly distinguishable from another element with the same name. The claims and the specification may not use the same words. Accordingly, the first component in the specification may be the second component in the claim.

[0031] It should be noted that the following embodiments may replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features between embodiments may be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

[0032] The electrical connection or electrical connection described in the present disclosure may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there is a switch, diode, capacitor, inductor, other suitable components, or a combination of the above components between the endpoints of the components on the two circuits, but it is not limited to these.

[0033] In the present disclosure, the thickness, length, width and area can be measured by an optical microscope, and the thickness can be measured by a cross-sectional image in an electron microscope, but it is not limited to this. In addition, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0034] The electronic device disclosed herein may be applied to a display device, a light-emitting device, a backlight device, an antenna device, a sensing device or a splicing device, or may be a temporary storage substrate for assisting electronic units to be placed at a specific spacing, but is not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, and the sensing device may be a sensing device for sensing capacitance, light, heat or ultrasound, but is not limited thereto. The electronic device may include electronic components such as passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. A light-emitting diode (LED) may include, for example, an organic light-emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro LED or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the electronic device can be any combination of the above arrangements, but is not limited thereto. In addition, the shape of the electronic device can be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes.

[0035] Figure 1A is a schematic diagram of a reactor according to a first embodiment of the present disclosure, and Figure 1B for Figure 1A A partial cross-sectional schematic diagram of an embodiment of a recovery chamber in a reactor.

[0036] Please refer to Figure 1A , which shows that the reactor 10a includes a reaction chamber 100, a gas chamber 200, a precursor source 300, a carrier gas source 400 and a recovery chamber 500. In this embodiment, the reactor 10a is a metal-organic chemical vapor deposition (MOCVD) reactor, but the present disclosure is not limited thereto.

[0037] The reaction chamber 100, for example, includes a support table 110. The support table 110 is used, for example, to place at least one substrate SB to be reacted, wherein the substrate SB may be, for example, a semiconductor substrate, but the present disclosure is not limited thereto. In some embodiments, a heating unit (not shown) and a rotating unit (not shown) are further provided below the support table 110. The heating unit may, for example, be used to heat the support table 110 to a suitable temperature so that the substrate SB reaches a reaction temperature at which, for example, an MOCVD process may be performed. The rotating unit may, for example, be used to rotate the substrate SB during the reaction process. In this embodiment, the reactor 10a may further include a vacuum pump VP1 and a pressure controller PC1. The vacuum pump VP1 is connected to the reaction chamber 100, for example, via a gas flow path GP1 including an inlet valve I1 and an inlet valve O1, and it may, for example, be used to evacuate the reaction chamber 100 during the reaction. The pressure controller PC1, for example, connects the vacuum pump VP1 to the reaction chamber 100 via the gas flow path GP1 to control the pressure in the reaction chamber 100. It is worth noting that although Figure 1A The reactor 10 a is shown to include one reaction chamber 100 , but the reactor 10 a may include a plurality of reaction chambers 100 .

[0038] The gas chamber 200 is, for example, disposed above the reaction chamber 100. In the present embodiment, the gas chamber 200 includes a showerhead 210. The showerhead 210 may, for example, include a cover plate 212 and a gas distribution unit 214. The cover plate 212 may, for example, be plate-shaped and include stainless steel, aluminum alloy or other suitable metal materials, but the present disclosure is not limited thereto. The gas distribution unit 214 is, for example, disposed below the cover plate 212. In some embodiments, the gas distribution unit 214 includes a plurality of gas flow paths (not shown). The plurality of gas flow paths are, for example, each connected to a precursor source 300 and a carrier gas source 400 to transfer the raw materials provided by the precursor source PS and the carrier gas source 400 to the substrate SB for MOCVD process, but the present disclosure is not limited thereto. In some embodiments, the showerhead 210 may further include a cooling unit (not shown). The cooling unit may, for example, be used to cool the high temperature generated by the heating unit heating the support table 110 to reduce the possibility of abnormality of the showerhead 210 due to the influence of the high temperature.

[0039] The precursor source 300 is connected to the gas chamber 200, for example, to provide a reaction precursor to the gas chamber 200. In the present embodiment, the precursor source 300 includes a first precursor source 310 and a second precursor source 320, but the present disclosure is not limited thereto. The precursor PS1 provided by the first precursor source 310 includes, for example, an organic metal. For example, the precursor PS1 provided by the first precursor source 310 may include trimethyl gallium (Ga(CH3)3), trimethyl indium (In(CH3)3), triethyl aluminum (Al(C2H5)3), diethyl tellurium (Te(C2H5)2), diethyl zinc (Zn(C2H5)2), other suitable organic metals or combinations thereof. The precursor PS2 provided by the second precursor source 320 includes, for example, a hydride or a halide. For example, the precursor PS2 provided by the second precursor source 320 may include ammonia (NH3), arsine (AsH3), phosphine (PH3), monosilane (SiH4), disilane (Si2H6), hydrogen selenide (H2Se), carbon tetrabromide (CBr4), other suitable hydrides or halides or combinations thereof. It is worth noting that although Figure 1A The precursor source 300 is shown to include one first precursor source 310 and one second precursor source 320 , but the precursor source 300 may include a plurality of first precursor sources 310 and a plurality of second precursor sources 320 .

[0040] The carrier gas source 400 is connected to the gas chamber 200, for example, to provide a carrier gas CG to the gas chamber 200. The carrier gas CG provided by the carrier gas source 400 includes, for example, an inert gas or other gas that does not react with the precursor PS1 and the precursor PS2. For example, the carrier gas CG provided by the carrier gas source 400 may include nitrogen (N2), hydrogen (H2), other suitable gases, or a combination thereof.

[0041] In this embodiment, the reactor 10a may further include a precursor flow path PP1, a precursor flow path PP2, a carrier gas flow path CP, and a mass flow controller MFC, but the present disclosure is not limited thereto.

[0042] The precursor flow path PP1 may be configured, for example, to connect the first precursor source 310 to the gas chamber 200, the precursor flow path PP2 may be configured, for example, to connect the second precursor source 320 to the gas chamber 200, and the carrier gas flow path CP may be configured, for example, to connect the carrier gas source 400 to the gas chamber 200. The flow controller MFC connects the precursor source PS to the gas chamber 200, for example, through the precursor flow path PP1 and the precursor flow path PP2, and connects the carrier gas source CS to the gas chamber 200, for example, through the carrier gas flow path CP, to control the flow rate of each gas in the precursor flow path PP1, the precursor flow path PP2, and the carrier gas flow path CP flowing into the gas chamber 200.

[0043] In some embodiments, the inlets of the precursor flow path PP1, the precursor flow path PP2, and the carrier gas flow path CP are respectively provided with an inlet valve IV1, an inlet valve IV2, and an inlet valve IV3, which are used to control the connection or disconnection of the corresponding gas flow paths. In addition, in some embodiments, the outlets of the precursor flow path PP1, the precursor flow path PP2, and the carrier gas flow path CP are respectively provided with an outlet valve OV1, an outlet valve OV2, and an outlet valve OV3, which are used to control the connection or disconnection of each gas from the flow controller MFC to the gas chamber 200.

[0044] The recovery chamber 500 is connected to the reaction chamber 100 and the precursor flow path PP1, for example. Figure 1B In this embodiment, the reactor 10a further includes a recovery flow path RP, a circulation flow path LP, a discharge flow path DP, a solution inlet SP and a grinding flow inlet AP, and the recovery chamber 500 includes a recovery chamber 510, a filtering unit 520, a rotating unit 530 and a heating unit 540. The inlet and outlet of the recovery flow path RP are each provided with an inlet valve IV4 and an outlet valve OV4, for example, which are used to control the connection or disconnection of the recovery flow path RP. The inlet and outlet of the circulation flow path LP are each provided with an inlet valve IV5 and an outlet valve OV5, for example, which are used to control the connection or disconnection of the circulation flow path LP. The inlet of the discharge flow path DP is provided with an inlet valve IV6, for example, which is used to control the connection or disconnection of the discharge flow path DP.

[0045] The recovery flow path RP is, for example, configured to connect the recovery chamber 510 with the reaction chamber 100 to transfer the tail gas TG from the reaction chamber 100 to the recovery chamber 500. The circulation flow path LP is, for example, configured to connect the recovery chamber 510 with the first precursor source 310 to transfer the precursor PS1' formed after the tail gas TG is processed by the recovery chamber 500 to the precursor flow path PP1, and then flow into the gas chamber 200 together with the precursor PS1 again. The exhaust flow path DP is, for example, configured to connect with the recovery chamber 510 to discharge the residual gas RG formed after the tail gas TG is processed by the recovery chamber 500, wherein the residual gas RG can be reused in other processes or discarded, and the present disclosure is not limited thereto. The solution inlet SP and the polishing flow inlet AP can, for example, respectively provide a solution and a polishing material to the recovery chamber 510, which are used for the processing process of the tail gas TG by the recovery chamber 500, which will be described in detail in the following embodiments. The filter unit 520 is, for example, disposed in the recovery chamber 510, and can be configured to discharge impurities during the process of treating the tail gas TG, but the present disclosure is not limited thereto. The rotation unit 530 is, for example, disposed below the recovery chamber 510 and connected thereto, and can, for example, be used to rotate when the recovery chamber 500 treats the tail gas TG. The heating unit 540 is, for example, disposed around the recovery chamber 510, and can be configured to heat the recovery chamber 510 to a suitable temperature during the process of treating the tail gas TG, so as to, for example, oxidize some substances in the tail gas TG to achieve the purpose of removing specific functional groups.

[0046] In this embodiment, the reactor 10a may further include a vacuum pump VP2 and a pressure controller PC2. The vacuum pump VP2 is connected to the recovery chamber 500, for example, through a gas flow path GP2 including an inlet valve I2 and an inlet valve O2, and may be configured to evacuate the recovery chamber 500 during the process of treating the tail gas TG. The pressure controller PC2 connects the vacuum pump VP2 and the recovery chamber 500, for example, through the gas flow path GP2, to control the pressure in the recovery chamber 500.

[0047] Figure 1C To use Figure 1A A partial schematic diagram of a semiconductor device of an embodiment of a reactor formed, Figure 1D Show Figure 1C A partial schematic diagram of an embodiment of a semiconductor film layer of a semiconductor element in FIG. Figure 1E Show Figure 1C A partial schematic diagram of another embodiment of a semiconductor film layer of a semiconductor element in FIG.

[0048] Please refer to Figure 1C , Figure 1CThe semiconductor device shown is a light emitting diode (LED). In this embodiment, the light emitting diode (LED) is sequentially stacked with a substrate 1, a nucleation layer 2, a buffer layer 3, a non-doped layer 4a, an n-type doped layer 4b, a heterojunction 5, a quantum well layer 6, an electron blocking layer 7, a p-type doped layer 4c, and a p-type heavily doped layer 4d in a direction Z, but the present disclosure is not limited thereto.

[0049] In the present embodiment, the material of the substrate 1 includes silicon, the material of the nucleation layer 2 includes aluminum nitride, the material of the buffer layer 3 includes aluminum gallium nitride, the material of the undoped layer 4a includes i-type gallium nitride, the material of the n-type doped layer 4b includes n-type gallium nitride, the material of the heterojunction 5 includes indium gallium nitride / gallium nitride short-period superlattice, the material of the quantum well layer 6 includes indium gallium nitride / gallium nitride multiple quantum wells, the material of the electron blocking layer 7 includes p-type aluminum gallium nitride, the material of the p-type doped layer 4c includes p-type gallium nitride, and the material of the p-type heavily doped layer 4d includes p-type heavily doped gallium nitride, but the present disclosure is not limited to this.

[0050] In this embodiment, the buffer layer 3 in the light emitting diode LED is formed by using the above-mentioned reactor 10a, which can be formed by performing the following steps: Figure 2 The buffer layer 3 is formed by the steps shown in the figure, but the present disclosure is not limited thereto. The impurities included in the buffer layer 3 have a concentration gradient. In detail, the impurities included in the buffer layer 3 increase along the growth direction (direction Z) of the buffer layer 3, such as Figure 1D In addition, the impurities may exist in the form of particles IM, but the present disclosure is not limited thereto. The reason why the impurities in the buffer layer 3 have a concentration gradient will be described in the following embodiments.

[0051] Figure 2 The figure is a schematic diagram of a process of forming a film layer by using recycled gas in a semiconductor process according to an embodiment of the present disclosure.

[0052] Please refer to Figure 2 In step S10, a reactor 10a is provided. The reactor 10a may be, for example, an MOCVD reactor. The arrangement relationship and use of the components included in the reactor 10a may refer to the above embodiment, and will not be described in detail here.

[0053] In step S20, the tail gas TG generated after the film forming reaction in the reactor 10a is collected. In this embodiment, the film formed is Figure 1CThe buffer layer 3 of the light-emitting diode LED shown in the figure, but the present disclosure is not limited to this. In addition, the reaction carried out in the reactor 10a may be, for example, an MOCVD process. In the present embodiment, the collected tail gas TG may include unreacted precursor PS1, precursor PS2 and carrier gas CG, wherein precursor PS1 is trimethylgallium (Ga(CH3)3) and triethylaluminum (Al(C2H5)3), precursor PS2 is ammonia (NH3), and carrier gas CG is nitrogen (N2) and hydrogen (H2), but the present disclosure is not limited to this. In some embodiments, the tail gas TG can be collected through a recovery chamber 500 and a recovery flow path RP connected to the reaction chamber 100. The introduction of the recovery chamber 500 and the recovery flow path RP can refer to the above embodiments and will not be repeated here.

[0054] In step S30, the collected tail gas TG is purified to obtain a purified precursor PS1'. In this embodiment, the purified precursor PS1' includes trimethylgallium. In some embodiments, the collected tail gas TG can be purified by a recovery chamber 500. The introduction of the purification of the tail gas TG by the recovery chamber 500 can refer to the above embodiment and will not be repeated here. It is worth noting that the purified precursor PS1' may include a portion of impurities (such as hydrocarbons such as methyl and / or such as Figure 1E byproduct in the form of particles as shown).

[0055] In some embodiments, the step of purifying the collected tail gas (step S30) further includes separating a carrier gas from the tail gas TG. The carrier gas can be separated using the reactor 10b of the following embodiment, but the present disclosure is not limited thereto.

[0056] In some embodiments, the step of purifying the collected tail gas (step S30) may include performing the following FIG. 10A to FIG. 10D The process of the embodiment is shown, but the present disclosure is not limited thereto.

[0057] In step S40, the purified precursor PS1' is transferred to the reaction chamber 100. In some embodiments, the purified precursor PS1' can be provided to the reaction chamber 100 in real time through the precursor flow path PP1 connected to the circulation flow path LP. The introduction of the circulation flow path LP can refer to the above embodiment and will not be repeated here. In this embodiment, the purified precursor PS1' is transferred to the reaction chamber 100 in real time for forming Figure 1C The reaction of the buffer layer 3 of the light emitting diode LED is shown, but the present disclosure is not limited thereto.

[0058] In some embodiments, before the purified precursor PS1 ′ is transferred to the reaction chamber 100 , the purified precursor PS1 ′ may be mixed with an organic solvent to form a liquid precursor using a reactor 10 c described in the following embodiments, but the present disclosure is not limited thereto.

[0059] In some embodiments, in step S40 , the reactor 10 d of the following embodiments may be used to perform purification multiple times to obtain a plurality of purified precursors PS1 ′, and the plurality of purified precursors PS1 ′ are different from each other, but the present disclosure is not limited thereto.

[0060] Based on this, after performing step S10, performing at least one cycle of steps S20 to S40 can form the buffer layer 3 in the light-emitting diode LED. It is worth noting that since the purified precursor PS1' includes a portion of impurities, and the concentration of impurities in the reaction chamber 100 increases with the reaction time, the impurities included in the buffer layer 3 will have a concentration gradient. In detail, the impurities included in the buffer layer 3 will increase along the growth direction (direction Z) of the buffer layer 3, such as Figure 1D and Figure 1E As shown in .

[0061] Figure 3 This is a schematic diagram of a reactor according to a second embodiment of the present disclosure. It should be noted that: Figure 3 The embodiments can be used Figure 1A The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0062] Please refer to Figure 3 The main difference between the reactor 10 b of this embodiment and the above-mentioned reactor 10 a is that the carrier gas source 400 is further connected to the first precursor source 310 .

[0063] In detail, in the present embodiment, the reactor 10b further comprises a carrier gas flow path CP'. The carrier gas flow path CP' is, for example, configured to connect the carrier gas source 400 to the first precursor source 310. In some embodiments, the outlet of the carrier gas flow path CP' has an outlet valve OV3', which is used to control the connection or disconnection of the carrier gas flow path CP'. In addition, in the present embodiment, the circulation flow path LP is configured to connect the recovery chamber 500 to the first precursor source 310.

[0064] In addition, in the present embodiment, the exhaust flow path DP, for example, includes an exhaust flow path DP1 and an exhaust flow path DP2. The exhaust flow path DP1, for example, is configured to exhaust the carrier gas CG' formed after the exhaust gas TG is treated by the recovery chamber 500, wherein the carrier gas CG' can be reused in the process or stored, and the present disclosure is not limited to this. The exhaust flow path DP2, for example, is configured to exhaust the residual gas RG' formed after the exhaust gas TG is treated by the recovery chamber 500, wherein the residual gas RG' can be reused in other processes or discarded, and the present disclosure is not limited to this. The inlet of the exhaust flow path DP1 and the inlet of the exhaust flow path DP2 are, for example, respectively provided with an inlet valve IV61 and an inlet valve IV62, which are used to respectively control the connection or disconnection of the exhaust flow path DP1 and the exhaust flow path DP2.

[0065] Figure 4 This is a schematic diagram of a reactor according to the third embodiment of the present disclosure. It should be noted that, Figure 4 The embodiments can be used Figure 3 The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0066] Please refer to Figure 4 The main difference between the reactor 10 c of this embodiment and the above-mentioned reactor 10 b is that the reactor 10 c of this embodiment further includes a mixing chamber 600 and an organic solvent source 700 .

[0067] Specifically, in this embodiment, the reactor 10c further includes a mixing flow path MP and an organic solvent flow path OP.

[0068] The mixing flow path MP is configured, for example, to connect the mixing chamber 600 to the recovery chamber 500. The inlet and outlet of the mixing flow path MP are each provided with an inlet valve IV5 and an outlet valve OV5, for example, which are used to connect or shut off the mixing flow path MP. In addition, in this embodiment, the circulation flow path LP is configured to connect the mixing chamber 600 to the first precursor source 310.

[0069] The organic solvent flow path OP is configured, for example, to connect the organic solvent source 700 to the mixing chamber 600. The inlet of the organic solvent flow path OP is provided with, for example, an inlet valve IV7 for connecting or shutting off the organic solvent flow path OP.

[0070] By setting up the mixing chamber 600 and the organic solvent source 700, the precursor PS1' formed after the tail gas TG is treated by the recovery chamber 500 and the organic solvent OS provided by the organic solvent source 700 can be transmitted to the mixing chamber 600, and the precursor PS1' and the organic solvent OS can be mixed in the mixing chamber 600 to form a liquid precursor PS1", and provided to the first precursor source 310 via the circulation flow path LP for real-time transmission to the gas chamber 200.

[0071] Figure 5 This is a schematic diagram of a reactor according to the fourth embodiment of the present disclosure. It should be noted that, Figure 5 The embodiments can be used Figure 4 The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0072] Please refer to Figure 5 The main difference between the reactor 10d of this embodiment and the above-mentioned reactor 10c is that the reactor 10d of this embodiment includes a plurality of recovery chambers 500 .

[0073] In detail, in the present embodiment, the plurality of recovery chambers 500 may include a first recovery chamber 500a and a second recovery chamber 500b, and the mixing flow path MP includes a first mixing flow path MP1 and a second mixing flow path MP2.

[0074] The first mixing flow path MP1 is, for example, configured to connect the first recovery chamber 500a to the reaction chamber 100, and the second mixing flow path MP2 is, for example, configured to connect the second recovery chamber 500b to the first recovery chamber 500a. The inlet and outlet of the first mixing flow path MP1 are, for example, each provided with an inlet valve IV51 and an outlet valve OV51, which are used for connecting or shutting off the first mixing flow path MP1. The inlet and outlet of the second mixing flow path MP2 are, for example, each provided with an inlet valve IV52 and an outlet valve OV52, which are used for connecting or shutting off the second mixing flow path MP2. In addition, in the present embodiment, the exhaust flow path DP1 includes a first exhaust flow path DP11 and a second exhaust flow path DP12. The first exhaust flow path DP11 is, for example, configured to be connected to the first recovery chamber 500a to discharge the residual gas RG1 formed after the tail gas TG is treated by the first recovery chamber 500a, wherein the residual gas RG1 can be reused in other processes or discarded. The second exhaust flow path DP12 is, for example, configured to be connected to the second recovery chamber 500b to exhaust the residual gas RG2 formed after the tail gas TG' is processed by the second recovery chamber 500b, wherein the residual gas RG2 can be reused in other processes or discarded.

[0075] By disposing a plurality of recovery chambers 500 , the precursor PS1 ′ can be purified multiple times, so that the impurities in the precursor PS1 ′ can be further reduced.

[0076] Figure 6 This is a schematic diagram of a reactor according to the fifth embodiment of the present disclosure. It should be noted that, Figure 6 The embodiments can be used Figure 3 The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0077] Please refer to Figure 6 The main difference between the reactor 10e of this embodiment and the above-mentioned reactor 10b is that the reactor 10e of this embodiment does not include a circulation flow path LP.

[0078] In detail, in the present embodiment, the reactor 10e further includes a discharge flow path DP3. The discharge flow path DP3 is configured to be connected to the recovery chamber 500, for example, to discharge the precursor PS1' formed after the tail gas TG is processed by the recovery chamber 500, wherein the discharged precursor PS1' can be collected by the container 1000. Since the precursor PS1' includes impurities, the precursor PS1' discharged by the discharge flow path DP3 can be returned to the reaction chamber 100 after purification treatment, or used in other processes. The inlet of the discharge flow path DP3 is provided with an inlet valve IV63, for example, which is used to control the connection or disconnection of the discharge flow path DP3.

[0079] Figure 7 This is a schematic diagram of a reactor according to the sixth embodiment of the present disclosure. It should be noted that, Figure 7 The embodiments can be used Figure 4 The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0080] Please refer to Figure 7 The main difference between the reactor 10f of this embodiment and the above-mentioned MOCVD reactor 10c is that the reactor 10f of this embodiment does not include a circulation flow path LP.

[0081] In detail, in the present embodiment, the reactor 10f further includes a discharge flow path DP3. The discharge flow path DP3 is, for example, configured to be connected to the mixing chamber 600, so that the precursor PS1' formed after the tail gas TG is treated in the recovery chamber 500 can be mixed in the mixing chamber 600 with the organic solvent OS provided by the organic solvent source 700 to form a liquid precursor PS1", and discharged through the discharge flow path DP3, wherein the discharged liquid precursor PS1" can be collected by the container 1000. Since the liquid precursor PS1' includes impurities, the liquid precursor PS1' discharged by the discharge flow path DP3 can be subsequently returned to the reaction chamber 100 after purification treatment, or can be used in other processes. The inlet of the discharge flow path DP3 is, for example, provided with an inlet valve IV63, which is used to control the connection or disconnection of the discharge flow path DP3.

[0082] Figure 8 This is a schematic diagram of a reactor according to the seventh embodiment of the present disclosure. It should be noted that, Figure 8 The embodiments can be used Figure 7 The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0083] Please refer to Figure 8 The main difference between the reactor 10g of this embodiment and the above-mentioned reactor 10f is that the discharge flow path DP in the reactor 10g of this embodiment includes a discharge flow path DP1 and a discharge flow path DP2.

[0084] In the present embodiment, the exhaust flow path DP1 is configured, for example, to exhaust the carrier gas CG' formed after the exhaust gas TG is treated by the recovery chamber 500, wherein the carrier gas CG' can be reused in the process or stored, and the present disclosure is not limited thereto. The exhaust flow path DP2 is configured, for example, to exhaust the residual gas RG' formed after the exhaust gas TG is treated by the recovery chamber 500, wherein the residual gas RG' can be reused in other processes or discarded, and the present disclosure is not limited thereto. The inlet of the exhaust flow path DP1 and the inlet of the exhaust flow path DP2 are, for example, respectively provided with an inlet valve IV61 and an inlet valve IV62, which are used to respectively control the connection or disconnection of the exhaust flow path DP1 and the exhaust flow path DP2.

[0085] Fig. 9 This is a schematic diagram of a reactor according to the eighth embodiment of the present disclosure. It should be noted that, Fig. 9 The embodiments can be used Figure 5 The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0086] Please refer to Fig. 9The main difference between the reactor 10h of this embodiment and the above-mentioned reactor 10d is that the reactor 10h of this embodiment does not include a circulation flow path LP.

[0087] Specifically, in this embodiment, the reactor 10h further includes a discharge flow path DP3.

[0088] The exhaust flow path DP3, for example, includes a first exhaust flow path DP31 and a second exhaust flow path DP32. The first exhaust flow path DP31, for example, is configured to be connected to the first recovery chamber 500a to discharge the precursor PS11' formed after the exhaust gas TG is treated by the first recovery chamber 500a, wherein the discharged precursor PS11' can be collected by the container 1000a. The second exhaust flow path DP32, for example, is configured to be connected to the second recovery chamber 500b to discharge the precursor PS12' formed after the exhaust gas TG' is treated by the second recovery chamber 500b, wherein the discharged precursor PS12' can be collected by the container 1000b. In the present embodiment, the discharged precursor PS11' and the precursor PS12' include different main components, thereby achieving the effect of respectively recovering different main components, but the present disclosure is not limited to this.

[0089] Since the precursor PS11' and the precursor PS12' each contain impurities, the PS11' and the precursor PS12' discharged by the discharge flow path DP3 can be returned to the reaction chamber 100 after purification, or used in other processes. The inlet of the first discharge flow path DP31 and the inlet of the second discharge flow path DP32 are respectively provided with an inlet valve IV63 and an inlet valve IV63', which are used to control the connection or disconnection of the first discharge flow path DP31 and the second discharge flow path DP32.

[0090] Fig. 10A To use Figure 1A A schematic diagram of a process flow of an embodiment of treating tail gas in a recovery chamber in a reactor. It should be noted that Fig. 10A The embodiments can be used Figure 1A The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0091] Please refer to Fig. 10A , which shows that the tail gas TG can be treated according to the following process, wherein the tail gas TG, for example, includes a main component TG1 and impurities TG2 and TG3.

[0092] First, the tail gas TG is transferred to the recovery chamber 510 of the recovery chamber 500 through the recovery flow path RP, and the solution SO1 is transferred to the recovery chamber 510 through the solution inlet SP to extract (leaching) the main component TG1 in the tail gas TG. After the tail gas TG is mixed with the solution SO1, the impurities TG2 and TG3 are discharged by the filter unit 520 of the recovery chamber 500, wherein the discharged impurities TG2 and TG3 can be collected by the container 2000. In some embodiments, the solution SO1 may include water or a suitable acid, but the present disclosure is not limited thereto.

[0093] Next, the grinding material G is transferred to the recovery chamber 510 of the recovery chamber 500 through the grinding flow inlet AP, and the recovery chamber 510 is rotated by the rotating unit 530 so that the grinding material G grinds the main component TG1, thereby achieving a physical catalytic effect. In some embodiments, sodium carbonate may be added before grinding the main component TG1, but the present disclosure is not limited thereto.

[0094] Thereafter, the main component TG1 in the recovery chamber 510 is heated by the heating unit 540 , for example, to remove specific functional groups in the main component TG1 to form the main component TG1a.

[0095] Then, after the main component TG1a is formed, the solution SO2 is transferred to the recovery chamber 510 through the solution inlet SP to extract the precursor PS1' in the main component TG1a. Afterwards, the precursor PS1' is discharged by the filtration unit 520, wherein the discharged precursor PS1' can be collected by the container 1000. In the present embodiment, the main component TG1 is trimethylgallium, and therefore, the precursor PS1' includes gallium after the methyl group is removed, but the present disclosure is not limited thereto. In some embodiments, the solution SO2 may include water or a suitable acid, but the present disclosure is not limited thereto.

[0096] Then, the extraction solution SE is used to extract the precursor PS1' in the container 1000. In some embodiments, the extraction solution SE may include sulfuric acid or other suitable acids, but the present disclosure is not limited thereto.

[0097] Fig. 10B To use Figure 1A A schematic diagram of another embodiment of treating tail gas in a recovery chamber in a reactor. It should be noted that Fig. 10B The embodiments can be used Fig. 10A The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0098] Please refer to Fig. 10B , and Fig. 10A The main difference in the process shown is that the tail gas TG is extracted twice.

[0099] In detail, in the present embodiment, the tail gas TG (including the main component TG1, the main component TG1' and the impurity TG2) is transmitted to the recovery chamber 510 of the recovery chamber 500 through the recovery flow path RP, and the solution SO1 is transmitted to the recovery chamber 510 through the solution inlet SP to extract (leaching) the main component TG1 and the main component TG1' in the tail gas TG. After the tail gas TG is mixed with the solution SO1, the impurity TG2 is discharged by the filter unit 520 of the recovery chamber 500, wherein the discharged impurity TG2 can be collected by the container 2000. In some embodiments, the solution SO1 may include water or a suitable acid, but the present disclosure is not limited thereto.

[0100] Then, the solution SO1' is transferred to the recovery chamber 510 through the solution inlet SP again to extract the main component TG1. After the main component TG1, the main component TG1' and the solution SO1' are mixed, the precursor PS12' including the main component TG1' is discharged by the filter unit 520 of the recovery chamber 500, wherein the discharged precursor PS12' can be collected by the container 3000. In some embodiments, the solution SO1' may include a suitable acid, but the present disclosure is not limited thereto.

[0101] In the present embodiment, the main component TG1′ is trimethylindium, and therefore the precursor PS12′ includes indium with the methyl group removed, but the present disclosure is not limited thereto.

[0102] In addition, in the present embodiment, the main component TG1 is trimethylgallium, and therefore, the precursor PS11 ′ subsequently subjected to the above process includes gallium with the methyl group removed, but the present disclosure is not limited thereto.

[0103] Fig. 10C To use Figure 1A A schematic flow chart of another embodiment of treating tail gas in a recovery chamber in a reactor. Fig. 10C The embodiments can be used Fig. 10A The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0104] Please refer to Fig. 10C , and Fig. 10A The main difference in the process shown is that no TG extraction is performed on the tail gas.

[0105] Fig. 10D To use Figure 1A A schematic flow chart of another embodiment of treating tail gas in a recovery chamber in a reactor. Fig. 10D The embodiments can be used Fig. 10CThe component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0106] Please refer to Fig. 10D , and Fig. 10C The main difference in the process shown is that a dissolution step and a calcination step are also included.

[0107] In detail, after the main component TG1 in the recovery chamber 510 is heated by the heating unit 540, the main component TG1a can be formed, for example. Then, the solution SO3 is transmitted to the recovery chamber 510 through the solution inlet SP to dissolve the main component TG1a, wherein the dissolution process conditions are 23atm, 220°C and 4h, but the present disclosure is not limited thereto. In some embodiments, the solution SO3 includes aqua regia, but the present disclosure is not limited thereto.

[0108] Then, the alkali AL is transferred to the recovery chamber 510 through the feed port FP to perform a calcination step on the main component TG1a. The alkali AL may include, for example, lithium metaborate, sodium hydroxide, sodium carbonate or a combination thereof, but the present disclosure is not limited thereto.

[0109] Afterwards, the acid AC is transmitted to the recovery chamber 510 through the solution inlet SP to extract the precursor PS1' in the main component TG1a. The acid AC can be, for example, a variety of suitable acids, but the present disclosure is not limited thereto.

[0110] In summary, in some embodiments of the present disclosure, the unreacted tail gas in the reaction can be recovered, and the precursor obtained after purifying the tail gas can be transferred to the reaction chamber again for reaction. Therefore, some embodiments of the present disclosure can reduce the amount of reaction precursors used to reduce process costs.

[0111] Furthermore, in some other embodiments of the present disclosure, after the unreacted tail gas is recovered, the precursor obtained after purifying the tail gas can be stored for use in subsequent processes, thereby reducing the process cost of the subsequent processes.

[0112] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for forming a film layer using recycled gas, characterized in that: include: providing a reactor; collecting tail gas generated after the reaction of forming the film layer in the reaction chamber of the reactor; Purifying the collected tail gas to obtain a purified precursor; as well as The purified precursor is transported to the reaction chamber. 2 . The method for forming a film layer using recycled gas according to claim 1 , wherein the purified precursor is transmitted to the reaction chamber in real time to perform the reaction for forming the film layer. 3 . The method for forming a film layer using recycled gas according to claim 2 , wherein the purified precursor includes impurities, and the concentration of the impurities increases along the growth direction of the film layer.

4. The method for forming a film layer using recycled gas according to claim 1, wherein before the purified precursor is transported to the reaction chamber, the method further comprises the following steps: The purified precursor is mixed with an organic solvent to form a liquid precursor.

5. The method for forming a membrane layer using recycled gas according to claim 1, wherein in the step of purifying the collected tail gas, it also includes separating a carrier gas from the tail gas. 6 . The method for forming a film layer using recycled gas according to claim 1 , wherein the collected tail gas is purified multiple times to obtain a plurality of purified precursors, and the plurality of purified precursors are different from each other.

7. The method for forming a membrane layer using recycled gas according to claim 1, wherein the step of purifying the collected tail gas comprises: extracting a first principal component from the tail gas; grinding the first main component; heating the first principal component; extracting a second principal component from the first principal component; as well as The second main component is extracted to obtain the purified precursor.

8. A method for forming a semiconductor film layer using recycled gas, characterized in that: include: Providing a metal organic chemical vapor deposition reactor; collecting tail gas generated after an organic metal chemical vapor deposition process for forming the semiconductor film layer is performed in a reaction chamber of the organic metal chemical vapor deposition reactor; Purifying the collected tail gas to obtain a purified precursor; as well as The purified precursor is transported to the reaction chamber.

9. The method for forming a semiconductor film layer using recycled gas according to claim 8, wherein the purified precursor is transmitted to the reaction chamber in real time to perform the organic metal chemical vapor deposition process for forming the semiconductor film layer.

10. The method for recycling gas to form a semiconductor film layer according to claim 8, wherein the semiconductor film layer comprises a buffer layer of a light-emitting diode, the material of the buffer layer comprises aluminum gallium nitride and hydrocarbons, and the concentration of the hydrocarbons increases along the growth direction of the buffer layer.

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