Diamond coating film and preparation method thereof

Abstract

The invention discloses a preparation method of a diamond coating film, which comprises the following steps of: preparing a base material which has good lattice matching and thermal expansion coefficient matching with diamond, and cleaning and activating the surface of the base material to remove impurities and oxides on the surface; determining the thickness of the prepared diamond coating film, collecting data, obtaining predicted film deposition time and growth time of smooth (100) surfaces of nucleated diamond particles according to the data, and setting preparation parameters at the same time; the diamond can form an ideal smooth (100) surface by calculating the # imgabs0 # introduction time, meanwhile, a plurality of preparation devices are arranged for cooperative operation, and gas is recycled, so that not only can the gas utilization rate be improved, but also the stability of the preparation environment can be ensured, and a large number of high-quality diamond coating films can be conveniently produced.

Description

Technical Field

[0001] The invention relates to the technical field of diamond coating films, and in particular to a diamond coating film and a preparation method thereof. Background Art

[0002] Diamond coating film is a superhard material deposited on the surface of other materials. Its main component is diamond. This film has extremely high hardness, excellent wear resistance, good thermal conductivity and chemical stability. Therefore, it is widely used in many industrial fields, such as cutting tools, abrasive tools, electronic devices and biomedical equipment. When preparing diamond coating films, chemical vapor deposition (CVD) is usually used for film preparation. The crystal orientation and grain size of the diamond coating film prepared by this method can be accurately customized by finely controlling the deposition parameters, so as to meet the requirements for film performance in different application scenarios.

[0003] Traditional diamond coating film preparation methods have mostly relied on basic carbon sources such as methane in terms of raw material utilization, but have not fully realized , As auxiliary raw materials, , It is a non-essential ingredient in traditional preparation methods and is not calculated even if it is involved in small amounts. The key details of the input time make it difficult for diamond growth to reach the ideal state and it is difficult to form a smooth (100) surface on the particle surface, resulting in low film quality. In addition, when using the microwave method in the gas deposition method, the gas utilization rate is low, which not only causes waste of resources, but also increases production costs, seriously restricting large-scale production. Moreover, most of the existing preparation devices are single and isolated, and cannot achieve efficient coordination, making it difficult to quickly and stably produce a large number of high-quality diamond coating films.

[0004] Currently, no effective solution has been proposed for the problems in the related technologies. Summary of the invention

[0005] In view of the problems in the related art, the present invention proposes a diamond coating film and a preparation method to overcome the above technical problems existing in the existing related art.

[0006] To this end, the specific technical solution adopted by the present invention is as follows: A method for preparing a diamond coating film, the method comprising the following steps: S1. Prepare a substrate that has a good lattice match and thermal expansion coefficient match with diamond, and clean and activate the surface of the substrate to remove impurities and oxides on the surface; S2. Determine the thickness of the prepared diamond coating film and collect data, obtain the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation based on the data, and set the preparation parameters; S3. Combine the estimated film deposition time and the growth time parameter for obtaining a smooth (100) surface on the surface of the diamond particles after nucleation with the collected data to determine Flow rate and Flow rate and duration of passage; S4. Set up multiple preparation devices, evacuate the reaction chamber to a set pressure range, and then slowly introduce , , At the same time, adjust the gas flow rate to the required value and turn on the microwave generator. After the gas flow rate reaches a stable value, monitor it in real time. , , The ratio and diamond growth state and obtain the gas ratio value; During actual production, an online gas analyzer is used to monitor the gas ratio in real time, and the obtained real-time ratio data is averaged, and finally the calculation result is used as the specific gas ratio; S5, monitor the nucleation state of the diamond inside the preparation device A, and pass it into And adjust the gas flow, set the duration of the gas flow according to the preset time, and monitor in real time , , and ratio, and obtain the gas ratio value; S6. Collect the gas introduced into the preparation device A before nucleation, and remove the gas , , Other impurities, while adding , , So that it reaches the ratio obtained in S4, and finally the mixed gas is introduced into the preparation device B, and the preparation device B starts diamond nucleation; S7, preparation device A reaches After the laser is injected for a certain period of time, the surface morphology and roughness are measured by laser interferometry to determine whether the surface of the diamond particles has reached a smooth (100) surface. When the target condition is reached, the injection is stopped. , while monitoring , , ratio, and obtain the gas ratio value; S8, pass the preparation device A into Gas collection within a certain period of time and gas removal , , , Other impurities, while adding , , , , so that it reaches the ratio obtained in S5, and finally the mixed gas is introduced into the preparation device B, and the preparation device B begins to introduce a gas containing Mixed gas; S9, stop feeding the preparation device A After a certain period of time, the gas is collected and removed. , , Other impurities, while adding , , , so that it reaches the ratio obtained in S7, and finally the mixed gas is passed into the preparation device B.

[0007] As a preferred embodiment, the thickness of the prepared diamond coating film is determined, and data is collected, and the estimated film deposition time and the growth time of the diamond particle surface after nucleation to obtain a smooth (100) surface are obtained according to the data, and the preparation parameters are set, including the following steps: S21, determining the thickness of the prepared diamond coating film and collecting production data; S22. Calculate the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation based on the determined thickness of the diamond coating film and the collected data. The specific formula is: ; in, is the calculated estimated film deposition time, is the thickness of the prepared diamond film, is the thickness of the film in the collected data, is the film deposition time in which the data were collected; ; in, is the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation, is the thickness of the diamond particle surface to obtain a smooth (100) surface, The thickness of the smooth (100) surface of the diamond particle surface in the collected data is The time required for the diamond particle surface to obtain a smooth (100) thickness; The deposition time of the film is the total growth time of the diamond film, so the deposition time includes the growth time for the diamond particle surface to obtain a smooth (100) face after nucleation.

[0008] S23, setting preparation parameters including , flow rate, microwave power and substrate surface temperature.

[0009] As a preferred embodiment, the estimated film deposition time and the growth time parameter for obtaining a smooth (100) surface on the surface of the diamond particles after nucleation are combined with the collected data to determine Flow rate and The flow rate and duration of the injection include the following steps: S31. Determine the nucleation time of the film according to the expected film deposition time. The specific formula is: ; in, is the calculated nucleation time, is the proportionality coefficient, is the film deposition time; S32, the calculated growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation As Length of access; S33. Manual setting based on collected data The flow rate and Flow rate.

[0010] As a preferred embodiment, the gas introduced into the preparation device A before nucleation is collected and the gas is removed , , Other impurities, while adding , , The ratio obtained in S4 is reached, and finally the mixed gas is introduced into the preparation device B, and the preparation device B starts diamond nucleation, which includes the following steps: S61, collecting the gas introduced into the preparation device A before nucleation; S62, filter, adsorb and separate the collected gas to remove , , Other impurities; The collected gas is filtered, adsorbed and separated to remove solid particles, suspended matter, water vapor and other unnecessary gas components in the gas.

[0011] S63, use the online gas analyzer to measure the current gas , , proportion; S64. Calculate the amount of gas to be added based on the ratio obtained in S4. , , The amount of gas source is determined, and a corresponding amount of gas source is added to the collected gas; S66, introducing the prepared mixed gas into the preparation device B to provide an ideal environment for diamond nucleation. After diamond nucleation in the preparation device B, stop introducing the mixed gas.

[0012] As a preferred embodiment, the preparation device A achieves After the laser is injected for a certain period of time, the surface morphology and roughness are measured by laser interferometry to determine whether the surface of the diamond particles has reached a smooth (100) surface. When the target condition is reached, the injection is stopped. , while monitoring , , The ratio of gas and obtaining the gas ratio value includes the following steps: S71, measuring the morphology and roughness of the surface of the diamond particles by laser interferometry technology to determine whether a smooth (100) surface is achieved; S72, when the surface of the diamond particles reaches a smooth (100) surface, stop feeding ; When the surface of the diamond particles does not reach a smooth (100) surface, continue to pass And continue to monitor until the target value is reached; S73. Use an online gas analyzer to monitor the gas ratio in the preparation device A in real time, obtain an average ratio value based on the real-time ratio, and use the average ratio value as the final gas ratio average value.

[0013] As a preferred embodiment, the preparation device A is passed through Gas collection within a certain period of time and gas removal , , , Other impurities, while adding , , , , so that it reaches the ratio obtained in S5, and finally the mixed gas is introduced into the preparation device B, and the preparation device B begins to introduce a gas containing The gas mixture includes the following steps: S81, pass the preparation device A into Gas collection over time; S82, removal by filtration, adsorption and separation , , , Other impurities; S83. Calculate the amount of gas to be added based on the gas ratio obtained in S5. , , , The amount of gas source, and adding the corresponding amount of gas source into the collected gas; S84, will contain The mixed gas containing is introduced into the preparation device B, and the preparation state of the diamond in the preparation device B is monitored. When the surface of the diamond particles in the preparation device B reaches a smooth (100) surface, the introduction of the mixed gas containing of mixed gases. Monitor the diamond preparation state in the preparation device B, and stop feeding the diamond particles with the diamond powder after the diamond particles reach a smooth (100) surface. The mixed gas ensures the high quality and performance of the diamond film.

[0014] As a preferred embodiment, the preparation device A is stopped from entering After a certain period of time, the gas is collected and removed. , , Other impurities, while adding , , , so that it reaches the ratio obtained in S7, and finally passing the mixed gas into the preparation device B comprises the following steps: S91, stop feeding the preparation device A Gas collection after time; S92, removal by filtration, adsorption and separation , , Other impurities; S93. Calculate the gas ratio to be added based on the gas ratio obtained in S7. , , The amount of gas source is determined and the corresponding amount of gas source is added to the collected gas.

[0015] A diamond coating film is prepared according to the above preparation method.

[0016] As a preferred embodiment, the raw materials for making the film include , , , , and a substrate material, wherein the substrate material is a heterogeneous Mo substrate.

[0017] The beneficial effects of the present invention are: 1. The present invention adds , As an auxiliary raw material for diamond growth, it can produce diamond films of higher quality. , It is not a necessary condition for the preparation of diamond coating films, and the traditional preparation method does not specifically explain it. The length of time for access, the appropriate amount and Can promote decomposition, thereby improving the utilization rate of the carbon source and accelerating the growth rate of diamond; during the preparation process, , the surface of diamond particles can reach a smooth (100) surface, so by collecting data to calculate By optimizing the introduction time, the time it takes for the diamond to reach a smooth (100) surface can be obtained, thereby effectively optimizing the preparation process and quality of the diamond film.

[0018] 2. The present invention calculates Access time setting The introduction time can more accurately control the growth conditions of the diamond coating film, and After the injection time is completed, the diamond film will be monitored to ensure that the diamond film has grown to a smooth (100) surface, ensuring the high quality and consistency of the final diamond coating film.

[0019] 3. The present invention is provided with a plurality of preparation devices, which can rapidly carry out large-scale production of diamond coating films. Furthermore, since the utilization rate of gas is low when the microwave method in the gas deposition method is used to prepare diamond films, the utilization rate of gas can be effectively improved by recycling the gas.

[0020] 4. The present invention can recycle the gas of preparation device A and reuse it in the same stage of preparation device B by setting different start times for multiple preparation devices, and simultaneously monitor the three stages of preparation of preparation device A, including before nucleation, introduction, and When, stop access The ratio of each gas is monitored in real time, and the average value is calculated as the final ratio according to the ratio. Finally, the specific ratio in the recovered gas is monitored so that the ratio in the recovered gas can reach the calculated ratio. While improving the gas utilization rate, it can also stabilize the preparation environment of the diamond coating film, which is conducive to the simultaneous preparation of a large number of high-quality diamond coating films. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 The figure is a flow chart of a method for preparing a diamond coating film according to an embodiment of the present invention.

[0023] Figure 2 1 is a connection diagram of a diamond coating film preparation device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0024] To further illustrate each embodiment, the present invention provides drawings, which are part of the disclosure of the present invention and are mainly used to illustrate the embodiments and can be used in conjunction with the relevant descriptions in the specification to explain the operating principles of the embodiments. With reference to these contents, ordinary technicians in the field should be able to understand other possible implementations and advantages of the present invention. The components in the figures are not drawn to scale, and similar component symbols are generally used to represent similar components.

[0025] According to an embodiment of the present invention, a diamond coating film and a preparation method thereof are provided.

[0026] The present invention will now be further described with reference to the accompanying drawings and specific embodiments. Figure 1 As shown, a method for preparing a diamond coating film according to an embodiment of the present invention comprises the following steps: S1. Prepare a substrate that has a good lattice match and thermal expansion coefficient match with diamond, and clean and activate the surface of the substrate to remove impurities and oxides on the surface; S2. Determine the thickness of the prepared diamond coating film and collect data, obtain the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation based on the data, and set the preparation parameters; Furthermore, the thickness of the prepared diamond coating film is determined, and data is collected, and the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) face after nucleation are obtained according to the data, and the preparation parameters are set, including the following steps: S21, determining the thickness of the prepared diamond coating film and collecting production data; S22. Calculate the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation based on the determined thickness of the diamond coating film and the collected data. The specific formula is: ; in, is the calculated estimated film deposition time, is the thickness of the prepared diamond film, is the thickness of the film in the collected data, is the film deposition time in which the data were collected; ; in, is the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation, is the thickness of the diamond particle surface to obtain a smooth (100) surface, The thickness of the smooth (100) surface of the diamond particle surface in the collected data is The time required for the diamond particle surface to obtain a smooth (100) thickness; It should be noted that the estimated film deposition time and the growth time of the diamond particle surface after nucleation to obtain a smooth (100) surface can accurately control the film thickness and the stability of its performance, avoiding problems such as coating peeling or insufficient protection and performance improvement caused by thickness inaccuracy. In addition, accurate prediction of deposition time can not only improve production efficiency, but also provide in-depth insights into the growth mechanism through data, and provide theoretical guidance for adjusting growth parameters such as temperature and gas flow, thereby helping to produce higher quality diamond coating films; S23, setting preparation parameters including , flow rate, microwave power and substrate surface temperature.

[0027] S3. Combine the estimated film deposition time and the growth time parameter for obtaining a smooth (100) surface on the surface of the diamond particles after nucleation with the collected data to determine Flow rate and Flow rate and duration of passage; Furthermore, the predicted film deposition time and the growth time parameter for obtaining a smooth (100) surface on the surface of the diamond particles after nucleation are combined with the collected data to determine Flow rate and The flow rate and duration of the injection include the following steps: S31. Determine the nucleation time of the film according to the expected film deposition time. The specific formula is: ; in, is the calculated nucleation time, is the proportionality coefficient, is the film deposition time; S32, the calculated growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation As Length of access; S33. Manual setting based on collected data The flow rate and Flow rate.

[0028] It should be noted that and The flow rate is a key factor in the production of diamond films. When added, the resulting diamond film is composed of diamond particles that do not show obvious crystal faces and are covered with a large number of secondary nuclei and microcrystals. When the content is too high, it is found that although the entire diamond surface is relatively smooth, the quality of the diamond film is reduced; No When added, the surface of the diamond core not only does not show any crystal shape, but its surface is also covered with a large number of secondary nuclei and microcrystals. When the flow rate is too high, Strong etching effect, it is difficult to observe the diamond core on the substrate surface. When the flow rate is correct, the diamond core will appear as a cubic octahedral single crystal core with a smooth surface; S4. Set up multiple preparation devices, evacuate the reaction chamber to a set pressure range, and then slowly introduce , , At the same time, adjust the gas flow rate to the required value and turn on the microwave generator. After the gas flow rate reaches a stable value, monitor it in real time. , , The ratio and diamond growth state and obtain the gas ratio value; It should be noted that the multiple preparation devices include preparation device A, preparation device B, preparation device C, preparation device D..., and preparation device B can recycle the gas of preparation device A, preparation device C can recycle the gas of preparation device B, and preparation device D can recycle the gas of preparation device C, thereby achieving the effect of gas recycling; During actual production, the number of preparation devices can be set according to the number of diamond films to be produced; S5, monitor the nucleation state of the diamond inside the preparation device A, and pass it into And adjust the gas flow, set the duration of the gas flow according to the preset time, and monitor in real time , , and ratio, and obtain the gas ratio value; S6. Collect the gas introduced into the preparation device A before nucleation, and remove the gas , , Other impurities, while adding , , So that it reaches the ratio obtained in S4, and finally the mixed gas is introduced into the preparation device B, and the preparation device B starts diamond nucleation; Furthermore, the gas introduced into the preparation device A before nucleation is collected and the gas is removed , , Other impurities, while adding , , The ratio obtained in S4 is reached, and finally the mixed gas is introduced into the preparation device B, and the preparation device B starts diamond nucleation, which includes the following steps: S61, collecting the gas introduced into the preparation device A before nucleation; S62, filter, adsorb and separate the collected gas to remove , , Other impurities; S63, use the online gas analyzer to measure the current gas , , proportion; S64. Calculate the amount of gas to be added based on the ratio obtained in S4. , , The amount of gas source is determined, and a corresponding amount of gas source is added to the collected gas; S66, introducing the prepared mixed gas into the preparation device B to provide an ideal environment for diamond nucleation. After diamond nucleation in the preparation device B, stop introducing the mixed gas; S7, preparation device A reaches After the laser is injected for a certain period of time, the surface morphology and roughness are measured by laser interferometry to determine whether the surface of the diamond particles has reached a smooth (100) surface. When the target condition is reached, the injection is stopped. , while monitoring , , ratio, and obtain the gas ratio value; Furthermore, the preparation device A achieves After the laser is injected for a certain period of time, the surface morphology and roughness are measured by laser interferometry to determine whether the surface of the diamond particles has reached a smooth (100) surface. When the target condition is reached, the injection is stopped. , while monitoring , , The ratio of gas and obtaining the gas ratio value includes the following steps: S71, measuring the morphology and roughness of the surface of the diamond particles by laser interferometry technology to determine whether a smooth (100) surface is achieved; S72, when the surface of the diamond particles reaches a smooth (100) surface, stop feeding ; When the surface of the diamond particles does not reach a smooth (100) surface, continue to pass And continue to monitor until the target value is reached; It should be noted that the synthesis of diamond films with smooth (100) faces (or close to (100) orientation) grown from diamond particles on a heterogeneous substrate is critical because the (100) face is one of the smoothest and most structurally stable faces of a diamond crystal. The (100) face has a lower surface energy and a higher surface atomic arrangement density, which makes it easier for diamond films to form a smooth, uniform surface during growth while also having excellent mechanical, thermal, and electrical properties. In addition, diamond films with a close to (100) orientation can provide higher crystal quality and reduce defects and stress, thereby significantly improving the performance and application potential of diamond films. Therefore, the synthesis of smooth (100) face (or close to (100) orientation) diamond films is a key step in achieving the preparation of high-quality diamond films. It should be noted that the interrupt The addition of is to take into account that diamond particles are prone to secondary nucleation and other microcrystals on their surface during the long-term growth. The continued existence will inevitably aggravate this situation, which will lead to a decrease in the quality of diamond particles. Therefore, in order to grow large-sized, high-quality diamond particles, subsequent Input S73. Use an online gas analyzer to monitor the gas ratio in the preparation device A in real time, obtain an average ratio value based on the real-time ratio, and use the average ratio value as the final gas ratio average value.

[0029] It should be noted that obtaining the average value of the ratio can eliminate the interference of accidental factors. In a continuous production process, the gas ratio in a short period of time may be affected by some sudden and atypical factors. Therefore, taking the average value of the ratio as the final gas ratio average value is conducive to data standardization and comparison.

[0030] S8, pass the preparation device A into Gas collection within a certain period of time and gas removal , , , Other impurities, while adding , , , , so that it reaches the ratio obtained in S5, and finally the mixed gas is introduced into the preparation device B, and the preparation device B begins to introduce a gas containing Mixed gas; Further, the preparation device A is passed through Gas collection within a certain period of time and gas removal , , , Other impurities, while adding , , , , so that it reaches the ratio obtained in S5, and finally the mixed gas is introduced into the preparation device B, and the preparation device B begins to introduce a gas containing The gas mixture includes the following steps: S81, pass the preparation device A into Gas collection over time; S82, removal by filtration, adsorption and separation , , , Other impurities; S83. Calculate the amount of gas to be added based on the gas ratio obtained in S5. , , , The amount of gas source, and adding the corresponding amount of gas source into the collected gas; S84, will contain The mixed gas containing is introduced into the preparation device B, and the preparation state of the diamond in the preparation device B is monitored. When the surface of the diamond particles in the preparation device B reaches a smooth (100) surface, the introduction of the mixed gas containing of mixed gases. S9, stop feeding the preparation device A After a certain period of time, the gas is collected and removed. , , Other impurities, while adding , , , so that it reaches the ratio obtained in S7, and finally the mixed gas is passed into the preparation device B Further, the preparation device A is stopped from entering After a certain period of time, the gas is collected and removed. , , Other impurities, while adding , , , so that it reaches the ratio obtained in S7, and finally passing the mixed gas into the preparation device B comprises the following steps: S91, stop feeding the preparation device A Gas collection after time; S92, removal by filtration, adsorption and separation , , Other impurities; S93. Calculate the gas ratio to be added based on the gas ratio obtained in S7. , , The amount of gas source is determined and the corresponding amount of gas source is added to the collected gas.

[0031] It should be noted that the growth conditions required for diamond films before and after nucleation are different. , , The flow rate and ratio are also different, monitoring the , , Ratio is essential. By monitoring the ratio of these gases, the growth environment can be precisely controlled to ensure that the best conditions are achieved in the nucleation stage and the growth stage, respectively, thus promoting the growth of high-quality diamond films. A diamond coating film is prepared according to the above preparation method.

[0032] Further, the raw materials for making the film include , , , , and a substrate material, wherein the substrate material is a heterogeneous Mo substrate; The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a diamond coating film, characterized in that: The method comprises the following steps: S1. Prepare a substrate that has a good lattice match and thermal expansion coefficient match with diamond, and clean and activate the surface of the substrate to remove impurities and oxides on the surface; S2. Determine the thickness of the prepared diamond coating film and collect data, obtain the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation based on the data, and set the preparation parameters; S3. Combine the estimated film deposition time and the growth time parameter for obtaining a smooth (100) surface on the surface of the diamond particles after nucleation with the collected data to determine Flow rate and Flow rate and duration of passage; S4. Set up multiple preparation devices, evacuate the reaction chamber to a set pressure range, and then slowly introduce , , At the same time, adjust the gas flow rate to the required value and turn on the microwave generator. After the gas flow rate reaches a stable value, monitor it in real time. , , The ratio and diamond growth state and obtain the gas ratio value; S5, monitor the nucleation state of the diamond inside the preparation device A, and pass it into And adjust the gas flow, set the duration of the gas flow according to the preset time, and monitor in real time , , and ratio, and obtain the gas ratio value; S6. Collect the gas introduced into the preparation device A before nucleation, and remove the gas , , Other impurities, while adding , , So that it reaches the ratio obtained in S4, and finally the mixed gas is introduced into the preparation device B, and the preparation device B starts diamond nucleation; S7, preparation device A reaches After the laser is injected for a certain period of time, the surface morphology and roughness are measured by laser interferometry to determine whether the surface of the diamond particles has reached a smooth (100) surface. When the target condition is reached, the injection is stopped. , while monitoring , , ratio, and obtain the gas ratio value; S8, pass the preparation device A into Gas collection within a certain period of time and gas removal , , , Other impurities, while adding , , , , so that it reaches the ratio obtained in S5, and finally the mixed gas is introduced into the preparation device B, and the preparation device B begins to introduce a gas containing Mixed gas; S9, stop feeding the preparation device A After a certain period of time, the gas is collected and removed. , , Other impurities, while adding , , , so that it reaches the ratio obtained in S7, and finally the mixed gas is passed into the preparation device B.

2. The method for preparing a diamond coating film according to claim 1, characterized in that: The step of determining the thickness of the prepared diamond coating film and collecting data, obtaining the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) face after nucleation based on the data, and setting the preparation parameters comprises the following steps: S21, determining the thickness of the prepared diamond coating film and collecting production data; S22. Calculate the estimated film deposition time and the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation based on the determined thickness of the diamond coating film and the collected data. The specific formula is: ； in, is the calculated estimated film deposition time, is the thickness of the prepared diamond film, is the thickness of the film in the collected data, is the film deposition time in which the data were collected; ； in, is the growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation, is the thickness of the diamond particle surface to obtain a smooth (100) surface, The thickness of the smooth (100) surface of the diamond particle surface in the collected data is The time required for the diamond particle surface to obtain a smooth (100) thickness; S23, setting preparation parameters including , The flow rate of alkane, microwave power and substrate surface temperature were determined.

3. The method for preparing a diamond coating film according to claim 2, characterized in that: The estimated film deposition time and the growth time parameter for obtaining a smooth (100) face on the surface of the diamond particles after nucleation are combined with the collected data to determine Flow rate and The flow rate and duration of the injection include the following steps: S31. Determine the nucleation time of the film according to the expected film deposition time. The specific formula is: ； in, is the calculated nucleation time, is the proportionality coefficient, is the film deposition time; S32, the calculated growth time for the diamond particle surface to obtain a smooth (100) surface after nucleation As Length of access; S33. Manual setting based on collected data The flow rate and Flow rate.

4. The method for preparing a diamond coating film according to claim 1, characterized in that: The gas introduced into the preparation device A before nucleation is collected and the gas is removed , , Other impurities, while adding , , The ratio obtained in S4 is reached, and finally the mixed gas is introduced into the preparation device B, and the preparation device B starts diamond nucleation, which includes the following steps: S61, collecting the gas introduced into the preparation device A before nucleation; S62, filter, adsorb and separate the collected gas to remove , , Other impurities; S63, use the online gas analyzer to measure the current gas , , The proportion of gas; S64. Calculate the amount of gas to be added based on the ratio obtained in S4. , , The amount of gas source is determined, and a corresponding amount of gas source is added to the collected gas; S66, introducing the prepared mixed gas into the preparation device B to provide an ideal environment for diamond nucleation. After diamond nucleation in the preparation device B, stop introducing the mixed gas.

5. The method for preparing a diamond coating film according to claim 1, characterized in that: The preparation device A achieves After the laser is injected for a certain period of time, the surface morphology and roughness are measured by laser interferometry to determine whether the surface of the diamond particles has reached a smooth (100) surface. When the target condition is reached, the injection is stopped. , while monitoring , , The ratio of gas and obtaining the gas ratio value includes the following steps: S71, measuring the morphology and roughness of the surface of the diamond particles by laser interferometry technology to determine whether a smooth (100) surface is achieved; S72, when the surface of the diamond particles reaches a smooth (100) surface, stop feeding ; When the surface of the diamond particles does not reach a smooth (100) surface, continue to pass And continue to monitor until the target value is reached; S73. Use an online gas analyzer to monitor the gas ratio in the preparation device A in real time, obtain an average ratio value based on the real-time ratio, and use the average ratio value as the final gas ratio average value.

6. The method for preparing a diamond coating film according to claim 1, characterized in that: The preparation device A is introduced into Gas collection within a certain period of time and gas removal , , , Other impurities, while adding , , , , so that it reaches the ratio obtained in S5, and finally the mixed gas is introduced into the preparation device B, and the preparation device B begins to introduce a gas containing The gas mixture includes the following steps: S81, pass the preparation device A into Gas collection over time; S82, removal by filtration, adsorption and separation , , , Other impurities; S83. Calculate the amount of gas to be added based on the gas ratio obtained in S5. , , , The amount of gas source, and adding the corresponding amount of gas source into the collected gas; S84, will contain The mixed gas containing is introduced into the preparation device B, and the preparation state of the diamond in the preparation device B is monitored. When the surface of the diamond particles in the preparation device B reaches a smooth (100) surface, the introduction of the mixed gas containing of mixed gases.

7. The method for preparing a diamond coating film according to claim 1, characterized in that: The preparation device A is stopped from feeding After a certain period of time, the gas is collected and removed. , , Other impurities, while adding , , , so that it reaches the ratio obtained in S7, and finally passing the mixed gas into the preparation device B comprises the following steps: S91, stop feeding the preparation device A Gas collection after time; S92, removal by filtration, adsorption and separation , , Other impurities; S93, calculate the gas ratio to be added according to the gas ratio obtained in S7 , , Measure the amount of gas source and add the corresponding amount of gas source into the collected gas.

8. A diamond coating film, characterized in that: The film is prepared according to the preparation method according to any one of claims 1 to 7.

9. The diamond coating film according to claim 8, characterized in that: The raw materials for making the film include , , , , and a substrate material, wherein the substrate material is a heterogeneous Mo substrate.

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