Method and system for line purge

Abstract

Methods for purging in deposition apparatuses and related systems are disclosed. Embodiments of the present disclosure include measuring a precursor residue concentration in the exhaust stream and ending the purge when the precursor residue concentration in the exhaust stream is equal to or lower than a reference precursor residue concentration.

Description

Technical Field

[0001] The present disclosure is in the field of semiconductor deposition equipment, and in the field of preventive maintenance thereof. Background Art

[0002] In machines that consume precursors, such as semiconductor deposition equipment, precursor lines need to be purged periodically, such as during preventive maintenance. For safety reasons, it may be most important to substantially completely remove the precursors during preventive maintenance. Unfortunately, substantially completely removing the precursors can take a lot of time. Therefore, there is a need for methods and systems that allow for faster purging of precursors from the lines. Summary of the invention

[0003] A deposition apparatus is described herein, comprising a precursor delivery system, the precursor delivery system being constructed and arranged to receive a precursor source including a precursor; a reaction chamber, the reaction chamber being fluidly connected to the precursor source via a precursor pipeline to provide the precursor from the precursor source to the reaction chamber; a purge gas delivery system, which is constructed and arranged to be operably connected to a purge gas source containing a purge gas, the purge gas source being constructed and arranged to provide a purge gas flow to at least one of the reaction chamber and the precursor pipeline; an exhaust line, which is constructed and arranged to receive an exhaust flow from at least one of the precursor pipeline and the reaction chamber, the exhaust The gas flow includes a precursor and a purge gas; a residual gas analyzer constructed and arranged to measure the concentration of the precursor in the exhaust flow; and a controller including a memory including computer-readable instructions that, when executed, cause the system to: start a purge at a predetermined purge start time, the purge including providing a purge gas flow to at least one of a reaction chamber and a precursor line; compare the precursor concentration in the exhaust flow with a reference precursor concentration; continue the purge when the concentration of the precursor in the exhaust flow exceeds the reference precursor concentration; and end the purge when the concentration of the precursor in the exhaust flow is equal to or less than the reference precursor concentration.

[0004] In some embodiments, the precursor includes a metal.

[0005] In some embodiments, the precursor includes an element selected from Si, Ge, Sn, Se, and Te.

[0006] In some embodiments, the precursor includes a halide.

[0007] In some embodiments, the precursor includes one or more ligands.

[0008] In some embodiments, the one or more ligands are selected from alkyls, alkenyls, aryls, dienyls, amines, amides, and beta-diketonates.

[0009] In some embodiments, the precursor includes phosphorus hydride.

[0010] In some embodiments, a reaction chamber includes a showerhead injector and a substrate support.

[0011] In some embodiments, the system includes a plasma source, in which case the system can be constructed and arranged to contact the substrate with one or more reactive species, the one or more reactive species including at least one of ions and radicals.

[0012] The present invention also describes a method for purging in a deposition device, the method comprising: providing a purge gas flow to at least one of a reaction chamber and a precursor pipeline to remove precursor residues from at least one of the reaction chamber and the precursor pipeline; removing an exhaust flow from at least one of the reaction chamber and the precursor pipeline through an exhaust line, the exhaust flow comprising the purge gas flow and the precursor residues; measuring the concentration of the precursor residues in the exhaust flow through a residual gas analyzer; comparing the concentration of the precursor residues in the exhaust flow with a reference precursor residue concentration through a controller; continuing to provide the purge gas flow when the concentration of the precursor residues in the exhaust flow exceeds the reference precursor residue concentration; and ending the provision of the purge gas flow when the concentration of the precursor residues in the exhaust flow is equal to or lower than the reference precursor residue concentration.

[0013] In some embodiments, the purge gas flow includes one or more inert gases.

[0014] In some embodiments, the one or more inert gases include N 2 and one or more of the noble gases.

[0015] In some embodiments, the noble gas includes argon.

[0016] In some embodiments, the purge gas flow includes one or more reactive gases.

[0017] In some embodiments, the one or more reactive gases include oxygen.

[0018] In some embodiments, the precursor residue includes one or more species selected from the group consisting of a precursor, a ligand, a reaction product, and a combustion product.

[0019] In some embodiments, the precursor residue includes CO 2 , CH 4 and HCl.

[0020] Also described herein is a method for switching precursor containers in a deposition apparatus, comprising: isolating a used precursor container from a precursor line contained in the system using a precursor container valve, the precursor line being fluidly connected to a reaction chamber contained in the system; purging at least one of the precursor line and the reaction chamber by the method described herein; removing the used precursor container from the system; and installing a new precursor container in the system.

[0021] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 , Figure 2 and Figure 4 An embodiment of the method described herein is shown.

[0023] Figure 3 An embodiment of the system described herein is shown.

[0024] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0025] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specifically disclosed embodiments described below.

[0026] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. A "substrate" may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. A substrate may be in any form, such as a powder, a plate, or a workpiece. A plate-like substrate may include wafers of various shapes and sizes. A substrate may be made of semiconductor materials, including, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide.

[0027] For example, a substrate in powder form can be used in drug manufacturing. The porous substrate can include a polymer. Examples of workpieces can include medical devices (such as stents and syringes), jewelry, tool equipment, components for battery manufacturing (such as anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0028] The continuous substrate may extend beyond the boundaries of the processing chamber in which the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber so that the process continues until the end of the substrate is reached. The continuous substrate may be provided from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form.

[0029] Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (eg, ceramic fibers or polymer fibers).The continuous substrate may also include a carrier or sheet on which a discontinuous substrate is mounted.

[0030] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device but are merely idealized representations used to describe embodiments of the present disclosure.

[0031] The specific embodiments shown and described are illustrations of the present invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. In fact, for the sake of brevity, the traditional manufacturing, connection, preparation and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems, and / or may not exist in some embodiments.

[0032] It should be understood that the configuration and / or method described herein are exemplary in nature, and these specific embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown can be performed in the order shown, in other orders, or omitted in some cases.

[0033] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts and / or properties disclosed herein, and any and all equivalents thereof.

[0034] Semiconductor deposition equipment has become increasingly complex. With this complexity comes regular maintenance. One maintenance action that may occur frequently is a precursor container change, where a depleted precursor container is detached and a new precursor container is installed. This precursor container change can take a lot of time because the precursor and other hazardous materials need to be removed from the precursor line to allow for a safe precursor container change. Embodiments of the presently disclosed subject matter enable fast and safe precursor container changes.

[0035] Surface confined deposition processes such as atomic layer deposition include many purge steps. These purge steps require time and use large flow rates of purge gas. It is desirable to reduce the purge time to reduce purge gas consumption. Embodiments of the presently disclosed subject matter can reduce purge gas consumption.

[0036] refer to Figure 1, a method of purging in a deposition apparatus is described herein, such as in a semiconductor deposition apparatus. The method includes providing 110 a purge gas flow. The purge gas flow may be provided to a reaction chamber, a precursor line, or both. Thus, precursor residues may be removed from the reaction chamber, the precursor line, or both. In some embodiments, the precursor residues include one or more of precursor vapors, particulate matter, and physically adsorbed precursors. Upon absorbing or entraining the precursor residues, the purge gas may form an exhaust flow that may be removed 120 from the apparatus, such as from a reaction chamber, a precursor line, or both. For example, the exhaust flow may be removed via an exhaust line. Figure 1 The method also includes measuring 130 a concentration of the precursor in the exhaust stream by a residual gas analyzer. Figure 1 The method also includes comparing 140 the precursor concentration in the exhaust stream to a reference precursor concentration. Figure 1 The method further includes evaluating 150 whether the precursor concentration in the exhaust stream exceeds a reference precursor concentration. In the event that the precursor concentration in the exhaust stream exceeds the reference precursor concentration, Figure 1 The method includes continuing to provide 110 the purge gas flow. In the case where the precursor concentration in the exhaust gas flow is equal to or lower than the reference precursor concentration, Figure 1 The method includes ending providing the purge gas flow, at which point the method ends 160 .

[0037] For example, the reference precursor concentration can be the detection limit of the residual gas analyzer, or 150% of the detection limit of the residual gas analyzer, or 300% of the detection limit of the residual gas analyzer, or another suitable value. It should be noted that the residual gas analyzer includes gas detectors such as mass spectrometers and Fourier transform infrared spectrometers, which are known in the art.

[0038] according to Figure 1 The method of the embodiment can be advantageously used during maintenance, such as during planned or unplanned maintenance. In fact, by purging only as needed, maintenance time can be minimized.

[0039] Therefore, reference Figure 2 , further described herein is a method of switching precursor containers in a deposition apparatus. The method includes isolating a used precursor container from a precursor line included in the system, for example using a precursor container valve 210. The precursor line can be fluidly connected to a reaction chamber included in the system. Figure 2 The method also includes purging 220 at least one of the precursor line and the reaction chamber by a method described herein. Figure 2 The method also includes removing 230 the spent precursor container from the system. Figure 2 The method further comprises installing 240 a new precursor container in the system. Thus, purge time and thus maintenance time can be minimized.

[0040] according to Figure 1 The method of an embodiment of the invention can advantageously be used during an atomic layer deposition process, i.e. to dynamically adapt the purge time during the process. Thus, the purge time and therefore the process duration can be minimized. Additionally or alternatively, the process drift can be minimized. In fact, by cross-referencing the film characteristics and the exhaust gas content during the purge, it can be inferred how much purge is needed in terms of the by-product content in the exhaust gas. Once this value is known, it can be used as a reference value in a feedback loop, so that this value can be used to dynamically control the purge time in order to make the process time and the process gas consumption as efficient as possible.

[0041] With the help of Figure 4 An embodiment of an atomic layer deposition process is shown. The method includes a step 411 of positioning a substrate on a substrate support contained in a reaction chamber. Then, the method includes a cyclic vapor deposition process 416, which includes repeatedly performing multiple cycles. A cycle from multiple cycles includes a precursor pulse 412 and a reactant pulse 414. The subsequent precursor pulse 412 and the reactant pulse 414 are separated by purges 413, 415 to prevent gas phase mixing between the precursor and the reactant. The reactant pulse includes exposing the substrate to a reactant, such as an oxygen reactant such as oxygen or a nitrogen reactant such as ammonia. The precursor pulse includes exposing the substrate to a precursor, such as a metal precursor. The cyclic deposition process 416 can be performed until a material with a desired thickness has been deposited. After the material with a desired thickness has been deposited, the method ends 417. Of course, one or more cycles may optionally include additional pulses, such as one or more additional precursor pulses and one or more additional reactant pulses, which can be separated from other reactants and precursor pulses by purges.

[0042] In some embodiments, the precursor residue includes one or more species selected from the group consisting of a precursor, a ligand, a reaction product, and a combustion product.

[0043] In some embodiments, the precursor residue includes CO 2 , CH 4 and HCl.

[0044] Ligands may include alkanes, alkenes, aromatic compounds, amines, amides, and β-diketones, among others.

[0045] In some embodiments, the precursor residue includes one or more combustion products, such as nitrogen oxides, CO 2 and H 2 O.

[0046] Such precursors are known in the art and include metal precursors, such as transition metal precursors, rare earth metal precursors, and post-transition metal precursors. Precursors may include alkyls, alkenyls, aryls, amines, amides, metal-π complexes, amidinates, and β-diketonates, among others.

[0047] In some embodiments, the precursor includes a metal.

[0048] In some embodiments, the precursor includes an element selected from Si, Ge, Sn, Se, and Te.

[0049] In some embodiments, the precursor includes a halide.

[0050] In some embodiments, the precursor comprises one or more ligands. In some embodiments, the one or more ligands are selected from alkyls, alkenyls, aryls, dienyls, amines, amides, and beta-diketonates.

[0051] In some embodiments, the precursor includes a pnictium hydride. Suitable hydrides may include phosphine and arsine.

[0052] In some embodiments, the purge gas stream includes one or more inert gases. Suitable inert gases may include N 2 and one or more of an inert gas. Suitable noble gases may be selected from helium, neon, argon, krypton and xenon.

[0053] In some embodiments, the one or more inert gases include N 2 and one or more of a rare gas. In some embodiments, the rare gas is selected from H, Ne, Ar, Kr, and Xe. In some embodiments, the rare gas includes argon.

[0054] In some embodiments, the purge gas stream includes one or more reactive gases. In some embodiments, the one or more reactive gases are selected from oxygen, halogens, nitrogen, free radicals, carbon reactants. In some embodiments, the one or more reactive gases are capable of at least partially volatilizing and / or entraining the precursor residues by reacting with the precursor residues.

[0055] In some embodiments, the one or more reactive gases include oxygen.

[0056] In some embodiments, the purge gas includes an oxygen species. The oxygen species may be selected from H 2 O, O 2 and O 3 .

[0057] In some embodiments, the purge gas comprises a halogen. Suitable halogens include fluorine, chlorine, bromine, and iodine.

[0058] In some embodiments, the purge gas includes a nitrogen species, such as ammonia or hydrazine or an alkyl-substituted hydrazine derivative.

[0059] In some embodiments, the purge gas includes radicals, such as hydrogen radicals, oxygen radicals, or nitrogen radicals.

[0060] In some embodiments, the purge gas includes a carbon reactant, such as methane.

[0061] The purging method in the semiconductor deposition apparatus currently described can be advantageously used to accelerate the replacement of empty precursor containers. Therefore, a method for switching precursor containers in a deposition apparatus is described herein. The method includes isolating a used precursor container from a precursor line contained in the system using a precursor container valve. The precursor line is fluidly connected to a reaction chamber contained in the system. The method also includes purging at least one of the precursor line and the reaction chamber by the method described herein. After the purging is completed, the method also includes removing the used precursor container from the system and installing a new precursor container in the system.

[0062] Here is the reference Figure 3An embodiment of the deposition apparatus is further described. The deposition apparatus includes a precursor source 310. The precursor source 310 may be operably connected to a precursor delivery system, which is constructed and arranged to receive the precursor source 310. The precursor source 310 includes a precursor 311. Some suitable precursors 311 are described elsewhere herein. The deposition apparatus also includes a reaction chamber 320. The reaction chamber 320 may include, for example, an atomic layer deposition reaction chamber or a chemical vapor deposition reaction chamber. In some embodiments (not shown), the reaction chamber includes a showerhead injector and a substrate support. For example, the deposition apparatus may also include a plasma source (not shown), which is constructed and arranged to generate plasma. Active species such as ions and free radicals may be generated in the plasma. When contained in the reaction chamber 320, the substrate may be in contact with the active species. The reaction chamber 320 is fluidly connected to the precursor source 310 via a precursor line 330 to provide the precursor 311 to the reaction chamber 320 from the precursor source 310. The deposition apparatus also includes a purge gas delivery system, such as a purge line 350, which is constructed and arranged to be operably connected to a purge gas source 340. The purge gas source 340 also includes a purge gas 341. As shown, the purge gas source 340 is constructed and arranged to provide a purge gas flow to the precursor line 330. In addition or alternatively, the purge gas source 340 can be constructed and arranged to provide a purge gas flow to the reaction chamber 320. For example, the purge gas source 340 can be connected to the precursor line 330 via the purge line 350. The deposition apparatus also includes an exhaust line 360. The exhaust line 360 ​​is constructed and arranged to receive an exhaust flow from at least one of the precursor line 330 and the reaction chamber 320. In the embodiment shown, the exhaust line 360 ​​is fluidly connected to the reaction chamber 320. In some embodiments (not shown), the exhaust line 360 ​​is fluidly connected to the precursor line 350. In some embodiments (not shown), exhaust line 360 ​​is fluidly connected to reaction chamber 320 and precursor line 350 .

[0063] The deposition apparatus also includes a residual gas analyzer 370. The residual gas analyzer 370 is constructed and arranged to measure the concentration of precursors in the exhaust stream. In some embodiments (not shown), the residual gas analyzer is included in the exhaust line 360. In some embodiments (as shown), the residual gas analyzer 370 is included in a bypass 361 branching from the exhaust line 360.

[0064] The deposition apparatus further includes a controller 380. The controller may include a memory, which may include computer-readable instructions, which when executed cause the system to start purging at a predetermined purge start time, the purging including providing a purge gas flow to at least one of the reaction chamber and the precursor line; comparing the precursor concentration in the exhaust flow with a reference precursor concentration; continuing the purging when the precursor concentration in the exhaust flow exceeds the reference precursor concentration; and ending the purging when the precursor concentration in the exhaust flow is equal to or lower than the reference precursor concentration.

[0065] In some embodiments, the deposition apparatus described herein may further include a plasma source. Suitable plasma sources include capacitive plasma sources, microwave plasma sources, and inductively coupled plasma sources. In some embodiments, the system is constructed and arranged to contact the substrate with one or more active substances. The one or more active substances may include at least one of ions and free radicals. Ions and free radicals may be generated in plasma in particular.

Claims

1. A deposition device, comprising: - a precursor delivery system constructed and arranged to receive a precursor source including a precursor; - a reaction chamber, the reaction chamber being fluidly connected to a precursor source via a precursor line for providing the precursor from the precursor source to the reaction chamber; - a purge gas delivery system constructed and arranged to be operably coupled to a purge gas source containing a purge gas, the purge gas source constructed and arranged to provide a flow of purge gas to at least one of the reaction chamber and the precursor line; - an exhaust line constructed and arranged to receive an exhaust flow from at least one of the precursor line and the reaction chamber, the exhaust flow comprising the precursor and a purge gas; - a residual gas analyzer constructed and arranged to measure the concentration of the precursor in the exhaust gas stream; - a controller comprising a memory including computer readable instructions that, when executed, cause the system to: - starting a purge at a predetermined purge start time, the purge comprising providing a purge gas flow to at least one of the reaction chamber and the precursor line; - comparing the precursor concentration in the exhaust stream to a reference precursor concentration; - When the concentration of the precursor in the exhaust stream exceeds the reference precursor concentration, continue purging; as well as - When the concentration of the precursor in the exhaust stream is equal to or lower than the reference precursor concentration, the purge is terminated.

2. The system according to claim 1, wherein: The precursor includes a metal.

3. The system according to claim 1, wherein: The precursor includes an element selected from the group consisting of Si, Ge, Sn, Se, and Te.

4. The system according to any one of claims 1 to 3, wherein: The precursor includes a halide.

5. The system according to any one of claims 1 to 4, wherein: The precursor comprises one or more ligands.

6. The system according to claim 5, wherein: The one or more ligands are selected from the group consisting of alkyls, alkenyls, aryls, dienyls, amines, amides, and beta-diketonates.

7. The system according to claim 1, wherein: The precursor includes a pnictide.

8. The system according to any one of claims 1 to 7, wherein: The reaction chamber includes a showerhead injector and a substrate support.

9. The system of any one of claims 1 to 8, further comprising a plasma source, wherein: The system is constructed and arranged to contact a substrate with one or more reactive species, the one or more reactive species comprising at least one of ions and free radicals.

10. A method for purging in a deposition apparatus, the method comprising: - providing a purge gas flow to at least one of the reaction chamber and the precursor line, thereby removing precursor residues from at least one of the reaction chamber and the precursor line; - removing an exhaust gas flow from at least one of the reaction chamber and the precursor line through an exhaust line, the exhaust gas flow comprising a purge gas flow and precursor residues; - measurement of the precursor residual concentration in the exhaust gas stream by means of a residual gas analyzer; - comparing, by a controller, a precursor residual concentration in the exhaust stream with a reference precursor residual concentration; - when the precursor residue concentration in the exhaust stream exceeds the reference precursor residue concentration, continuing to provide the purge gas flow; as well as - When the precursor residue concentration in the exhaust gas flow is equal to or lower than the reference precursor residue concentration, ending the provision of the purge gas flow.

11. The method according to claim 10, wherein: The purge gas stream includes one or more inert gases.

12. The method according to claim 11, wherein: The one or more inert gases include one or more of N2 and a rare gas.

13. The method according to claim 12, wherein: The rare gas includes argon.

14. The method according to claim 10, wherein: The purge gas stream includes one or more reactive gases.

15. The method according to claim 14, wherein: The one or more reactive gases include oxygen.

16. The method according to any one of claims 10 to 15, wherein: The precursor residue includes one or more substances selected from the group consisting of precursors, ligands, reaction products, and combustion products.

17. The method according to claim 16, wherein: The precursor residue includes one or more of CO2, CH4 and HCl.

18. A method for switching precursor containers in a deposition apparatus, comprising: - isolating a used precursor container from a precursor line contained in the system, the precursor line being fluidly connected to a reaction chamber contained in the system, using a precursor container valve; - purging at least one of the precursor line and the reaction chamber by the method according to any one of claims 10 to 17; - Remove the used precursor container from the system; as well as - Install a new precursor container in the system.

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