Semiconductor process apparatus and gas inlet assembly therefor

Abstract

The application discloses a semiconductor process equipment and a gas inlet assembly thereof, and belongs to the technical field of semiconductors. The semiconductor process equipment comprises a chamber body, a pedestal and a support shaft, the pedestal is arranged in the chamber body, the support shaft penetrates through the chamber body and is connected with the pedestal, the gas inlet assembly is used for introducing gas into the chamber body, the gas inlet assembly comprises an adapter ring used for connecting the support shaft and a guide ring used for being sleeved outside the support shaft, the adapter ring is provided with a protective gas channel used for introducing protective gas, a plurality of first gas outlets are arranged on the adapter ring in a circumferential direction of the adapter ring, and the protective gas channel is in communication with each first gas outlet; the guide ring is used for being sleeved outside the support shaft and at least partially located above the adapter ring, a gas flow gap for the flow of the protective gas is formed between the guide ring and the support shaft, the gas flow gap is in communication with each first gas outlet, and the flow area of the gas flow gap far away from the first gas outlet is smaller than the flow area of the gas flow gap close to the first gas outlet.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a semiconductor process equipment and its air intake assembly. Background Technology

[0002] In the field of semiconductor technology, atomic layer deposition (ALD) technology is widely used in semiconductor chip manufacturing processes. Its main gas inlet method is pulsed gas inlet, which forms thin films layer by layer on the surface of the wafer. Pulsed gas inlet involves sequentially introducing different process gases into the chamber body, while a protective gas is continuously introduced throughout the process for purging. The protective gas is used to purge non-process reaction areas, preventing process gases from entering non-process reaction areas and thus avoiding chemical reactions that could lead to film deposition.

[0003] In related technologies, semiconductor process equipment includes a chamber body, a base, and an inlet assembly. The base is disposed within the chamber body and can rise and fall between the process position and the wafer transfer position. When the base rises to the process position, a narrow annular gap is formed between the edge of the base and the chamber body. Process gas is introduced into the upper region of the base to process the wafer carried by the base. Meanwhile, the inlet assembly introduces protective gas into the lower region of the base (i.e., the non-process reaction region). The protective gas purges the lower region of the base and then flows into the upper region of the base through the annular gap to prevent the process gas from diffusing into the lower region of the base through the annular gap, thereby preventing the process gas from depositing a film or generating particles in the lower region of the base.

[0004] However, the area below the base is prone to being purged by protective gas. The protective gas has limited effect in blocking the process gas, and the process gas can still easily diffuse into the area below the base, resulting in coating or particle formation. Summary of the Invention

[0005] The purpose of this application is to provide a semiconductor process equipment and its gas inlet assembly, which can solve the problem that the protective gas in semiconductor process equipment has a poor effect on blocking the diffusion of process gas.

[0006] In a first aspect, embodiments of this application provide an air intake assembly for a semiconductor process apparatus. The semiconductor process apparatus includes a chamber body, a base, and a support shaft. The base is disposed within the chamber body, and the support shaft passes through the chamber body and is connected to the base. The air intake assembly is used to introduce gas into the chamber body. The air intake assembly comprises:

[0007] The adapter ring is used to connect the support shaft. The adapter ring is provided with a protective gas channel for introducing protective gas, and the adapter ring is provided with a plurality of first vent holes at intervals along its circumference. The protective gas channel is respectively connected to each of the first vent holes.

[0008] A guide ring is fitted over the outside of the support shaft, with at least a portion of the guide ring positioned above the adapter ring, so that an airflow gap is formed between the guide ring and the support shaft to allow the protective gas to flow. The airflow gap communicates with each of the first air outlets.

[0009] The flow area of ​​the airflow gap farther away from the first air outlet is smaller than the flow area of ​​the airflow gap closer to the first air outlet.

[0010] Secondly, embodiments of this application also provide a semiconductor process apparatus, including a chamber body, a base, a support shaft, and the aforementioned air intake assembly. The base is disposed within the chamber body, the support shaft passes through the chamber body and is connected to the base, and the air intake assembly is sleeved on the outside of the support shaft.

[0011] In this embodiment, the air intake assembly includes a transition ring and a guide ring. Through the protective gas channel of the transition ring and multiple first air outlets, the protective gas is divided into multiple protective gas streams in the circumferential direction of the support shaft. These multiple protective gas streams simultaneously flow into the airflow gaps, allowing the protective gas to flow evenly into the lower region of the base (i.e., the non-process reaction region) in the circumferential direction of the support shaft. Furthermore, since the flow area of ​​the airflow gaps farther from the first air outlets is smaller than that closer to the first air outlets, the flow area of ​​the airflow gaps decreases as the multiple protective gas streams flow towards the chamber body. This obstruction increases the velocity of the protective gas, causing the guide ring to evenly spray the protective gas into the chamber body. This facilitates the filling of the lower region of the base with protective gas. Moreover, the increased protective gas velocity further enhances the protection gas's ability to prevent process gas above the base from entering the lower region of the base (i.e., the non-process reaction region), thus improving the effect of preventing process gas diffusion. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the structure of semiconductor process equipment in related technologies;

[0013] Figure 2 This is a cross-sectional view of the semiconductor process equipment disclosed in the embodiments of this application;

[0014] Figure 3 This is a partial cross-sectional view of the semiconductor process equipment disclosed in the embodiments of this application;

[0015] Figure 4 This is a cross-sectional view of the mating structure of the adapter ring, guide ring, and support shaft disclosed in the embodiments of this application;

[0016] Figure 5 This is a schematic diagram of the fit between the adapter ring, guide ring, and support shaft disclosed in the embodiments of this application;

[0017] Figure 6 This is a schematic diagram of the structure of the adapter ring disclosed in the embodiments of this application;

[0018] Figure 7 and Figure 8 These are schematic diagrams of different parts of the adapter ring disclosed in this embodiment;

[0019] Figure 9 This is a schematic diagram of the engagement of the base, chamber body, first ring, and second ring disclosed in an embodiment of this application;

[0020] Figure 10 This is a schematic diagram of the engagement of the base, chamber body, first collar and second collar disclosed in another embodiment of this application;

[0021] Figure 11 This is one of the partial structural schematic diagrams of the air intake assembly disclosed in the embodiments of this application;

[0022] Figure 12 This is a cross-sectional view of a portion of the structure of the air intake assembly disclosed in the embodiments of this application;

[0023] Figure 13 This is a schematic diagram illustrating the effect of the rotating airflow disclosed in the embodiments of this application;

[0024] Figure 14 This is a second partial structural schematic diagram of the intake assembly disclosed in the embodiments of this application;

[0025] Figure 15A This is a top view of a partial structure of the air intake assembly disclosed in an embodiment of this application;

[0026] Figure 15B This is a front view of a partial structure of the air intake assembly disclosed in an embodiment of this application;

[0027] Figures 16-20 These are schematic diagrams of the cleaning gas channel and the second air outlet disclosed in different embodiments of this application;

[0028] Figure 21 This is a schematic diagram of the distribution of cleaning gas in the non-process reaction area disclosed in the embodiments of this application.

[0029] Explanation of reference numerals in the attached figures:

[0030] 10' - Intake assembly, 11' - Intake plate, 12' - Intake pipe, 13' - Bellows

[0031] 10-Intake assembly,

[0032] 100 - Adapter ring; 110 - Protective gas passage; 111 - First airflow passage; 111a - First air inlet; 111b - Second air outlet; 112 - Second airflow passage; 112a - First air inlet; 112b - Second air outlet; 113 - Third airflow passage; 113a - First air inlet; 113b - Second air outlet; 120 - First air outlet; 130 - Fastening hole.

[0033] 101-First adapter ring, 102-Second adapter ring, 103-Fastener, 104-Spring washer, 105-Washer plate

[0034] 200-Guide ring, a-Airflow gap, 200a-Guide surface, 210-Protrusion,

[0035] 300 - First intake pipe,

[0036] 400 - Gas distribution component; 410 - Cleaning gas passage; 411 - Fourth airflow passage; 411a - Second air inlet; 411b - Second air outlet; 412 - Fifth airflow passage; 412a - Second air inlet; 412b - Second air outlet; 413 - Sixth airflow passage; 413a - Second air inlet; 413b - Second air outlet; 420 - Second air outlet; A - First direction.

[0037] 401 - Base plate, 402 - Air distribution plate, 403 - Air distribution cover plate

[0038] 500 - Second intake pipe

[0039] 20-Cavity body, 201-Upper cavity, 201a-Overlapping part, 202-Lower cavity,

[0040] 21-Base, 22-Support shaft, 22a-Connecting protrusion, 23-Inlet block, 23a-Inlet hole, 24-Cavity cover, 25-Spray plate

[0041] 31-First ring, 31a-First protruding structure,

[0042] 32-Second ring, 32a-Second protrusion structure,

[0043] b - flow channel, b1 - first bend channel, b2 - second bend channel

[0044] 40 - Drive mechanism. Detailed Implementation

[0045] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0046] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0047] In related technologies, refer to Figure 1 As shown, the chamber body 20 is provided with a base 21 and a support shaft 22, with the upper end of the support shaft 22 connected to the base 21. The top of the chamber body 20 is provided with an opening, and an air inlet block 23, a chamber cover plate 24, and a spray plate 25 are arranged sequentially at the opening. The spray plate 25 is located above the base 21. The air inlet block 23 is provided with an air inlet hole 23a. The process gas introduced through the air inlet hole 23a flows sequentially through the air inlet block 23, the chamber cover plate 24, and the spray plate 25, and then enters the chamber body 20. The chamber cover plate 24 is used to diffuse the process gas, and the diffused process gas is sprayed onto the top of the base 21 through the spray holes of the spray plate 25.

[0048] When the base 21 is in the process position, an annular gap is formed between the edge of the base 21 and the chamber body 20. Process gas is introduced into the upper region of the base 21 through the air inlet block 23, the chamber cover plate 24 and the spray plate 25. The process gas processes the wafer supported by the base 21. At the same time, protective gas is introduced into the gap between the chamber body 20 and the support shaft 22 through the air inlet assembly 10'. The protective gas enters the lower region of the base 21 (i.e., the non-process reaction region) and purges the lower region of the base 21. Then, the protective gas flows into the upper region of the base 21 through the annular gap to prevent the process gas from diffusing into the lower region of the base 21 through the annular gap, thereby avoiding the process gas from depositing a film or generating particles in the lower region of the base 21.

[0049] However, the structure of the inlet assembly 10' is relatively simple, resulting in poor uniformity of the protective gas entering the non-process reaction area. The purging effect of the protective gas on the non-process reaction area is also poor, especially at the connection between the base 21 and the support shaft 22, where there is a purging dead zone. Process gases can still easily enter the non-process reaction area, leading to the formation of thin films and the generation of particles within this area. Furthermore, the protective gas has limited blocking effect on process gases, especially for both large and small volumes, which are more likely to diffuse into the non-process reaction area, resulting in poor blocking performance and hindering the wafer fabrication process.

[0050] Furthermore, due to the concentration difference between the process gas and the protective gas, it is difficult to avoid the process gas diffusing into the area below the base 21 (i.e., the non-process reaction area), thereby forming a thin film and generating particles in the area below the base 21; the temperature of the bottom of the base 21 and the support shaft 22 is relatively high, so the bottom of the base 21 and the support shaft 22 are more likely to be coated, thereby generating particles.

[0051] Based on this, this application provides a semiconductor process equipment and its air intake assembly to solve the problems in the related art where the protective gas introduced by the air intake assembly has limited blocking effect on the process gas, and the area below the base 21 is prone to film deposition and particle generation.

[0052] The semiconductor process equipment and its air intake assembly provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0053] Please refer to Figures 2-21 The air intake assembly 10 disclosed in this application is part of a semiconductor process apparatus. The semiconductor process apparatus includes a chamber body 20, a base 21, and a support shaft 22. The base 21 is disposed within the chamber body 20 and is used to support the wafer. The support shaft 22 supports the base 21 and passes through the chamber body 20, connecting to the base 21. Optionally, the upper end of the support shaft 22 can be fixedly connected to the bottom surface of the base 21 by welding, bonding, or other methods. Furthermore, the support shaft 22 can drive the base 21 to rotate, ensuring that the wafer supported by the base 21 is processed uniformly.

[0054] The air intake assembly 10 is used to introduce gas into the chamber body 20. The gas includes a protective gas, which includes, but is not limited to, nitrogen. The air intake assembly 10 is located between the chamber body 20 and the support shaft 22, and the air intake assembly 10 introduces the protective gas through the gap between the chamber body 20 and the support shaft 22.

[0055] Specifically, in combination Figures 4-8As shown, the intake assembly 10 includes an adapter ring 100 and a guide ring 200. The adapter ring 100 is used to connect the support shaft 22. The connection method between the adapter ring 100 and the support shaft 22 is not limited to welding, bolt connection, etc. Protective gas is introduced into the gap between the chamber body 20 and the support shaft 22 through the adapter ring 100. The guide ring 200 is used to limit the airflow of the protective gas introduced by the adapter ring 100 and increase the flow rate of the protective gas.

[0056] The adapter ring 100 is provided with a protective gas channel 110 for introducing protective gas, and the adapter ring 100 is provided with a plurality of first vent holes 120 spaced apart along its circumference, with the protective gas channel 110 communicating with each of the first vent holes 120. Optionally, one protective gas channel 110 may be provided, communicating with each of the first vent holes 120, or multiple protective gas channels 110 may be provided, with each protective gas channel 110 corresponding to a first vent hole 120. The first vent hole 120 may be a square hole, a circular hole, etc., and the structure of the first vent hole 120 and the protective gas channel 110 is not limited in this embodiment. Optionally, the axial direction of the first vent hole 120 is parallel to the support shaft 22.

[0057] With this configuration, the protective gas is divided into multiple airflows in the circumferential direction of the support shaft 22 through the protective gas channel 110 and multiple first air outlets 120. The multiple airflows flow simultaneously to the airflow gap a, so that the protective gas flows evenly to the area below the base 21 (i.e., the non-process reaction area) in the circumferential direction of the support shaft 22 through the airflow gap a.

[0058] refer to Figure 4 As shown, the guide ring 200 is fitted over the outside of the support shaft 22, and at least a portion of the guide ring 200 is located above the adapter ring 100. Optionally, the entire guide ring 200 may be located above the adapter ring 100, or a portion of the guide ring 200 may be located above the adapter ring 100, with the other portion of the guide ring 200 facing the adapter ring 100 in a direction perpendicular to the support shaft 22, i.e., the other portion of the guide ring 200 facing the adapter ring 100 in a horizontal direction. An airflow gap a is formed between the guide ring 200 and the support shaft 22 for the flow of protective gas. The airflow gap a communicates with each of the first air outlets 120, and the airflow gap a has an annular structure. Thus, the protective gas flowing out from the plurality of first air outlets 120 of the adapter ring 100 enters the airflow gap a and then enters the chamber body 20 through the airflow gap a.

[0059] Furthermore, the flow area of ​​the airflow gap a farther from the first vent 120 is smaller than that of the airflow gap a closer to the first vent 120. In other words, the flow area of ​​the airflow gap a changes along the outlet direction of the first vent 120; as the protective gas flows towards the chamber body 20, the flow area of ​​the airflow gap a decreases. Optionally, the flow area of ​​the airflow gap a can decrease abruptly or gradually along the outlet direction of the first vent 120. This embodiment does not limit how the flow area is specifically reduced; in short, the speed can be increased by obstructing the protective gas flow through the reduced flow area.

[0060] In this embodiment, the air intake assembly 10 is provided with a transition ring 100 and a guide ring 200. Through the protective gas channel of the transition ring and multiple first air outlets 120, the protective gas is divided into multiple protective gas streams in the circumferential direction of the support shaft 22. The multiple protective gas streams flow simultaneously to the airflow gap a, so that the protective gas flows evenly to the lower region (i.e., the non-process reaction region) of the base 21 in the circumferential direction of the support shaft 22 through the airflow gap a. Moreover, since the flow area of ​​the airflow gap far from the first air outlet 120 is smaller than that of the airflow gap near the first air outlet 120, the flow area of ​​the airflow gap a decreases during the flow of the multiple protective gas streams to the chamber body 20. The protective gas is obstructed and its velocity increases, causing the guide ring 200 to evenly spray the protective gas into the chamber body 20. This is beneficial for filling the lower region of the base 21 with protective gas. Furthermore, the increased protective gas velocity is more conducive to preventing the process gas above the base 21 from entering the lower region (i.e., the non-process reaction region) of the base 21, which is beneficial for improving the effect of preventing the diffusion of process gas.

[0061] In an optional embodiment, the inner wall surface of the guide ring 200 includes a guide surface 200a located above the adapter ring 100, and the distance from the guide surface 200a to the axis of the guide ring 200 decreases along the air outlet direction of the first air outlet 120.

[0062] Optionally, the axis of the guide ring 200 is collinear with the axis of the support shaft 22, and the distance from the guide surface 200a to the axis of the guide ring 200 decreases uniformly along the air outlet direction of the first air outlet 120, and the guide surface 200a is an annular conical surface; or, along the air outlet direction of the first air outlet 120, the distance from the guide surface 200a to the axis of the guide ring 200 decreases non-uniformly, and the guide surface 200a protrudes to the side where the axis of the guide ring 200 is located, or the guide surface 200a protrudes in a direction away from the axis of the guide ring 200.

[0063] With this configuration, as multiple protective gases flow towards the chamber body 20, they pass through the gap between the guide surface 200a and the support shaft 22. Since the distance from the guide surface 200a to the axis of the guide ring 200 decreases in the gas outlet direction of the first outlet 120, it indicates that the gap between the guide surface 200a and the support shaft 22 gradually decreases, and the flow area of ​​the protective gas gradually decreases. Therefore, under the guiding action of the guide surface 200a, the protective gas is obstructed and its velocity increases, causing the guide ring 200 to uniformly spray the protective gas into the chamber body 20. This is beneficial for filling the area below the base 21 with protective gas. Moreover, the increased flow velocity of the protective gas is more conducive to preventing the process gas above the base 21 from entering the area below the base 21 (i.e., the non-process reaction area), which is beneficial to improving the effect of preventing the diffusion of process gas.

[0064] Of course, in other embodiments, the distance from the guide surface 200a to the axis of the guide ring 200 along the air outlet direction of the first air outlet 120 may not show a decreasing pattern, and the guide surface 200a may also be a bent surface. In short, along the air outlet direction of the first air outlet 120, the flow area of ​​the airflow gap a can be reduced.

[0065] In the scheme of this application, the protective gas channel 110 includes at least two stages of first gas distribution channels. Each stage of the first gas distribution channel is provided with a first inlet end and at least two first outlet ends, wherein the two first outlet ends are located at both ends of the first gas distribution channel, and the first inlet end is located in the middle of the first gas distribution channel.

[0066] In two adjacent first-stage air distribution channels, the first outlet of the upper-stage first-stage air distribution channel is connected to the first inlet of the lower-stage first-stage air distribution channel. That is, the airflow entering the upper-stage first-stage air distribution channel is divided into at least two streams, which flow into the lower-stage first-stage air distribution channel through at least two first outlets, and are further divided by the lower-stage first-stage air distribution channel. The number of first-stage air distribution channels at each stage can be one or more. This application does not limit the number of first-stage air distribution channels; in short, the number of lower-stage first-stage air distribution channels is at least twice the number of upper-stage first-stage air distribution channels. The extension lengths of each stage of the first-stage air distribution channel can be equal or unequal.

[0067] refer to Figure 4 and Figure 6As shown, the intake assembly 10 also includes a first intake pipe 300, which is connected to the adapter ring 100. The first intake end of the first-stage first air distribution channel is connected to the first intake pipe 300. Optionally, the first intake pipe 300 and the adapter ring 100 can be fixedly connected by welding or other means. The first intake pipe 300 extends into the space surrounded by the adapter ring 100 and is located below the support shaft 22. The first outlet end of the last-stage first air distribution channel is connected to each of the first outlet holes 120. Thus, protective gas is introduced into the first-stage first air distribution channel through the first intake pipe 300, and the protective gas flows out from each of the first outlet holes 120 after being diverted through multiple stages of the first air distribution channel.

[0068] Optionally, each stage of the first air distribution channel has one first air inlet and two first air outlets, as shown in the reference. Figure 6 and Figure 7 As shown, the first air distribution channel can be two-stage, consisting of a first airflow channel 111 and two second airflow channels 112. The two second airflow channels 112 are spaced apart circumferentially along the transition ring 100. The first air inlet end 111a of the first airflow channel 111 is connected to the first air inlet pipe 300. The two first air outlet ends 111b of the first airflow channel 111 are respectively connected to the first air inlet ends 112a of the two second airflow channels 112, and the first air outlet ends 112b of the two second airflow channels 112 are respectively connected to the first air inlet ends 112a of each of the first air inlet pipes 300. The vent 120 is connected; alternatively, the first gas distribution channel can be three-stage, including a first airflow channel 111 and two second airflow channels 112, as well as four third airflow channels 113. The four third airflow channels 113 are arranged circumferentially around the transition ring 100. The first air outlets 112b of the two second airflow channels 112 are respectively connected to the first air inlets 113a of the four third airflow channels 113, and the first air outlets 113b of the four third airflow channels 113 are respectively connected to each of the first vents 120. Of course, the protective gas channel 110 may include more stages of the first gas distribution channel.

[0069] In this embodiment, by utilizing a multi-stage first air distribution channel, the protective gas provided by the first air inlet pipe 300 can be gradually divided into multiple streams, thereby simultaneously supplying gas to each of the first air outlets 120. This eliminates the need to simultaneously install multiple first air inlet pipes 300, reducing the number of first air inlet pipes 300, thus simplifying the structure of the air intake assembly and also simplifying the operation of introducing protective gas.

[0070] Of course, in other embodiments, the protective gas channel 110 may not be provided with multiple first gas distribution channels. The first air inlet pipe 300, the protective gas channel 110 and the first air outlet 120 are connected in a one-to-one correspondence. Gas can be supplied to each first air outlet 120 through the corresponding protective gas channel 110 by multiple first air inlet pipes 300.

[0071] In an optional embodiment, each first-stage air distribution channel has a first inlet end and two first outlet ends. Each first-stage air distribution channel extends circumferentially along the transition ring 100, meaning that each first-stage air distribution channel is an arc-shaped channel. Furthermore, circumferentially, the distance between the first inlet end and the two first outlet ends of the same first-stage air distribution channel is equal. That is, the first inlet end is located at the center of the first-stage air distribution channel.

[0072] Optionally, the distance between the first air inlet end and the two first air outlet ends of a portion of the first air distribution channel may be equal, or the distance between the first air inlet end and the two first air outlet ends of each of the first air distribution channels may be equal. Further optional, the distance between the first air inlet end 111a and the two first air outlet ends 111b of the same first airflow channel 111 may be equal, the distance between the first air inlet end 112a and the two first air outlet ends 112b of the same second airflow channel 112 may be equal, and the distance between the first air inlet end 113a and the two first air outlet ends 113b of the same third airflow channel 113 may be equal.

[0073] In this embodiment, the protective gas entering the first gas distribution channel of each stage is divided into two streams. The path lengths of these two protective gases to the two first gas outlets are equal. Therefore, the time for these two protective gases to flow to the next stage first gas distribution channel tends to be equal, which is beneficial for the protective gas to flow out of each first gas outlet 120 at the same time and for improving the uniformity of the protective gas purging.

[0074] Of course, in other embodiments, the distances between the first air inlet end and the two first air outlet ends of the same first air distribution channel are not equal in the circumferential direction of the adapter ring 100.

[0075] In this embodiment, the protective gas channel 110 includes a three-stage first gas distribution channel, namely the first airflow channel 111, the second airflow channel 112 and the third airflow channel 113 mentioned above. The number of the first air inlet pipe 300 and the first airflow channel 111 is one, the number of the second airflow channel 112 is two, the number of the third airflow channel 113 is four, and the number of the first air outlet 120 is eight.

[0076] In an optional embodiment, refer to Figure 5 and Figure 6 As shown, the adapter ring 100 includes a first adapter ring 101 and a second adapter ring 102 connected together. The first adapter ring 101 is located below the second adapter ring 102. (Refer to...) Figure 7 As shown, the first adapter ring 101 is provided with a protective gas channel 110, for reference. Figure 8As shown, the second adapter ring 102 is provided with a plurality of first vent holes 120. Optionally, the second adapter ring 102 is connected to the support shaft 22, and the two are connected by fasteners 103.

[0077] Specifically, the intake assembly 10 also includes multiple fasteners 103, multiple spring washers 104, and multiple gaskets 105. The fasteners 103 can be screws, bolts, etc. (Refer to...) Figure 8 As shown, the second adapter ring 102 is provided with multiple fastening holes 130, which can be threaded holes. The fastening holes 130, fasteners 103, spring washers 104, and washers 105 correspond one-to-one, and are then combined with... Figure 4 As shown, the lower end of the support shaft 22 is provided with a connecting protrusion 22a. Each fastener 103 passes through the corresponding spring washer 104 and the corresponding washer 105 and extends into the corresponding fastening hole 130. The washer 105 and the connecting protrusion 22a are engaged in an axial upper limit fit with the adapter ring 100 to fix the support shaft 22 and the adapter ring 100 relative to each other, thereby connecting the support shaft 22 and the adapter ring 100. When each fastener 103 is loosened, the washer 105 can be disengaged from the adapter ring 100, and the washer 105 no longer limits the connecting protrusion 22a, thus separating the support shaft 22 from the adapter ring 100 and disassembling the adapter ring 100.

[0078] Optionally, the number of fastening holes 130, fasteners 103, spring washers 104, and gaskets 105 are all 8; of course, other numbers can also be used. In the circumferential direction of the adapter ring 100, the fastening holes 130 and the first vent hole 120 are alternately distributed.

[0079] In related technologies, refer to Figure 1 As shown, the air intake assembly 10' includes an air intake component 11', an air intake pipe 12', and a bellows 13'. The air intake component 11' is connected to the lower end of the support shaft 22, and the air intake component 11' has an air intake channel communicating with the air intake pipe 12'. The bellows 13' is sleeved on the outside of the support shaft 22, and the upper end of the bellows 13' is connected to the chamber body 20, while the lower end of the bellows 13' is connected to the air intake component 11'. The flow gap between the bellows 13' and the support shaft 22 communicates with the air intake channel. In this way, both cleaning gas and protective gas can sequentially enter the area below the base 21 inside the chamber body 20 through the air intake pipe 12', the air intake channel, and the flow gap.

[0080] In the scheme of this application, reference is made to Figure 11 and Figure 12As shown, the intake assembly 10 also includes an air distributor 400, which has a ring-shaped structure and is fitted onto the guide ring 200. Optionally, the air distributor 400 is fitted onto the outside of the guide ring 200, or it is fitted onto the inside of the guide ring 200. Furthermore, the air distributor 400 is connected to the chamber body 20. Optionally, the air distributor 400 and the chamber body 20, and the air distributor 400 and the guide ring 200, can be connected by welding or other methods.

[0081] The gas distributor 400 is provided with a cleaning gas passage 410 for introducing cleaning gas. The cleaning gas can be a fluorine-containing gas, including but not limited to chlorine trifluoride (ClF3); Reference Figure 14 As shown, the gas distributor 400 has multiple second air outlets 420 spaced apart along its circumference, and the cleaning gas channels 410 are respectively connected to each of the second air outlets 420. Optionally, one cleaning gas channel 410 can be provided, which is connected to each of the second air outlets 420; or, multiple cleaning gas channels 410 can be provided, and each cleaning gas channel 410 is connected to a first air outlet 120 in a one-to-one correspondence. The second air outlets 420 can be square holes, circular holes, etc., and the embodiments of this application do not limit the structure of the second air outlets 420 and the cleaning gas channels 410.

[0082] In this embodiment, cleaning gas is introduced into the chamber body 20 through the gas distributor 400, and the cleaning gas is used to clean the coating and particles in the non-process reaction area. Moreover, the gas distributor 400 is provided with multiple second gas outlets 420, which divides the cleaning gas into multiple airflows in the circumferential direction of the support shaft 22. The multiple airflows flow simultaneously to the area below the base 21 (i.e., the non-process reaction area), so the uniformity of the cleaning gas in the circumferential direction of the support shaft 22 is improved, which is conducive to uniformly cleaning the coating and particles and improving the cleaning effect.

[0083] In an optional embodiment, the air outlet direction of each second air outlet 420 intersects or is parallel to the axis of the air distributor 400. Specifically, the angle β between the air outlet direction of the second air outlet 420 and the plane perpendicular to the axis of the air distributor 400 is: 0° < β < 90° when the air outlet direction of the second air outlet 420 intersects the axis of the air distributor 400, and β = 90° when the air outlet direction of the second air outlet 420 is parallel to the axis of the air distributor 400. The angle β between the air outlet direction of each second air outlet 420 and the axis of the air distributor 400 can be equal or unequal.

[0084] Optionally, refer to Figure 16 As shown, α = 0°, β = 60°; or, refer to Figure 17 As shown, α = 0°, β = 90°. Of course, β can also be other angles.

[0085] In a further embodiment, the air outlet direction of each second air outlet 420 intersects the first direction A, as shown in the reference. Figure 15A and Figure 15B As shown, the first direction A is perpendicular to the axis of the air distribution component 400 and parallel to the plane where the air distribution component 400 is located. The first direction A is the direction from the center of the inlet end of the second air outlet 420 to the axis of the air distribution component 400.

[0086] In other words, the outlet direction of each second air outlet 420 intersects the direction from the center of the inlet end of the second air outlet 420 to the axis of the air distributor 400, so that the cleaning gas flowing out through the cleaning gas channel 410 and each second air outlet 420 forms a rotating airflow. That is, the first direction A corresponding to each second air outlet 420 is different, the outlet direction of each second air outlet 420 is inclined relative to the corresponding first direction A, the angle between the outlet direction of each second air outlet 420 and the corresponding first direction A is α, α > 0°, and each second air outlet 420 is inclined to the same side in the circumferential direction of the air distributor 400. The angle α between the outlet direction of each second air outlet 420 and the corresponding first direction A can be equal or unequal.

[0087] Optionally, refer to Figure 15A and Figure 15B As shown, α = 30°, β = 60°; of course, α can also be other angles.

[0088] In this embodiment, the outlet direction of each second air outlet 420 intersects with the first direction A, and the outlet direction of each air outlet is inclined to the same side in the circumferential direction of the air distribution component 400. This causes the cleaning gas flowing out of each second air outlet 420 to flow upward around the support shaft 22 to form a rotating airflow. The rotating airflow gradually reaches the bottom surface of the base 21 and diffuses, which is beneficial for the cleaning gas to diffuse in the non-process reaction area, thereby cleaning the non-process reaction area thoroughly and improving the cleaning effect.

[0089] Of course, in other embodiments, the air outlet direction of each second air outlet 420 is parallel to the first direction A, i.e., α=0°.

[0090] In the scheme of this application, the cleaning gas channel 410 includes at least two levels of second gas distribution channels. Each level of second gas distribution channel has a second inlet end and at least two second outlet ends, wherein the two second outlet ends are located at both ends of the second gas distribution channel, and the second inlet end is located in the middle of the second gas distribution channel.

[0091] In two adjacent second-stage air distribution channels, the second outlet of the upper-stage second-stage air distribution channel is connected to the second inlet of the lower-stage second-stage air distribution channel. That is, the airflow entering the upper-stage second-stage air distribution channel is divided into at least two streams, which flow into the lower-stage second-stage air distribution channel through at least two second outlets, and are further divided by the lower-stage second-stage air distribution channel. The number of second-stage air distribution channels at each stage can be one or more. This application does not limit the number of second-stage air distribution channels; in short, the number of lower-stage second-stage air distribution channels is at least twice the number of upper-stage second-stage air distribution channels; the extension lengths of each stage of the second-stage air distribution channel can be equal or unequal.

[0092] refer to Figures 11-14 As shown, the intake assembly 10 also includes a second intake pipe 500, which is connected to the air distributor 400. The second intake end of the first-stage second air distributor is connected to the second intake pipe 500, and the second outlet end of the last-stage second air distributor is connected to each of the second outlet holes 420. Optionally, the second intake pipe 500 and the air distributor 400 can be fixedly connected by welding or other means. In this way, cleaning gas is introduced into the first-stage second air distributor through the second intake pipe 500, and the cleaning gas flows out from each of the second outlet holes 420 after being diverted through multiple stages of the second air distributor.

[0093] Optionally, each stage of the second air distribution channel has one second air inlet and two second air outlets, as shown in the reference. Figure 16 and Figure 17 As shown, the second air distribution channel can be two-stage, consisting of a fourth airflow channel 411 and two fifth airflow channels 412. The two fifth airflow channels 412 are spaced apart circumferentially along the air distribution component 400. The second air inlet end 411a of the fourth airflow channel 411 is connected to the second air inlet pipe 500, and the two second air outlet ends 411b of the fourth airflow channel 411 are respectively connected to the second air inlet ends 412a of the two fifth airflow channels 412. The second air outlet ends 412b of the two fifth airflow channels 412 are respectively connected to each second air outlet 420. Alternatively, the second air distribution channel can be three-stage, as shown in the reference. Figure 20 As shown, in addition to the fourth airflow channel 411 and the two fifth airflow channels 412, there are also four sixth airflow channels 413. The four sixth airflow channels 413 are arranged circumferentially around the gas distributor 400. The second air outlets 412b of the two fifth airflow channels 412 are respectively connected to the second air inlets 413a of the four sixth airflow channels 413, and the second air outlets 413b of the four sixth airflow channels 413 are respectively connected to each second air outlet 420. Of course, the cleaning gas channel 410 may include more stages of second gas distribution channels.

[0094] In this embodiment, by utilizing a multi-stage second air distribution channel, the cleaning gas provided by the second air inlet pipe 500 can be gradually divided into multiple streams, thereby simultaneously supplying air to each of the second air outlets 420. This eliminates the need to simultaneously install multiple second air inlet pipes 500, reducing the number of second air inlet pipes 500 and simplifying the structure of the air intake assembly 10, which is beneficial for simplifying the operation of introducing cleaning gas.

[0095] Of course, in other embodiments, the cleaning gas channel 410 may not be provided with multiple-stage second gas distribution channels. The second air inlet pipe 500, the cleaning gas channel 410 and the second air outlet 420 are connected in a one-to-one correspondence. Gas can be supplied to each second air outlet 420 through the corresponding protection gas channel 110 by multiple second air inlet pipes 500.

[0096] In an optional embodiment, each stage of the second air distribution channel has one second air inlet and two second air outlets. Each stage of the second air distribution channel extends circumferentially along the air distribution member 400, meaning that each second air distribution channel is an arc-shaped channel. Furthermore, circumferentially, the distance between the second air inlet and the two second air outlets of the same second air distribution channel is equal. That is, the second air inlet is located at the center of the second air distribution channel.

[0097] Optionally, the distance between the second air inlet end and the two second air outlet ends of a portion of the second air distribution channel may be equal, or the distance between the second air inlet end and the two second air outlet ends of each of the second air distribution channels may be equal. Further optionally, the distance between the second air inlet end 411a and the two second air outlet ends 411b of the same fourth airflow channel 411 may be equal, the distance between the second air inlet end 412a and the two second air outlet ends 412b of the same fifth airflow channel 412 may be equal, and the distance between the second air inlet end 413a and the two second air outlet ends 413b of the same sixth airflow channel 413 may be equal.

[0098] In this embodiment, the cleaning gas entering the second gas distribution channel of each stage is divided into two streams. The path lengths of these two cleaning gas streams to the two second gas outlets are equal. Therefore, the time for these two cleaning gas streams to flow to the next stage first gas distribution channel tends to be equal, which is more conducive to the simultaneous outflow of cleaning gas from each second gas outlet 420 and further improves the uniformity of the cleaning gas.

[0099] Of course, in other embodiments, the distances between the second air inlet end and the two second air outlet ends of the same second air distribution channel are not equal in the circumferential direction of the air distribution component 400.

[0100] In this embodiment, the cleaning gas channel 410 includes two-stage second gas distribution channels, namely the fourth airflow channel 411 and the fifth airflow channel 412 mentioned above. The number of the second air inlet pipe 500 and the fourth airflow channel 411 is one each, the number of the fifth airflow channel 412 is two, the number of the sixth airflow channel 413 is four, and the number of the second air outlet 420 is eight.

[0101] In the scheme of this application, reference is made to Figure 12 As shown, the air distribution component 400 includes a base plate 401, an air distribution plate 402, and an air distribution cover plate 403. The base plate 401 is connected to the air distribution plate 402. The base plate 401 and the air distribution plate 402 can be connected by non-removable means such as welding, or by detachable means such as screws. The base plate 401 and the air distribution plate 402 together form a cleaning gas channel 410. The air distribution cover plate 403 is disposed on the side of the air distribution plate 402 facing away from the base plate 401. Optionally, a second air outlet 420 is opened on the air distribution cover plate 403.

[0102] Furthermore, the outer wall surface of the guide ring 200 is provided with a protrusion 210, which protrudes from the outer wall surface of the guide ring 200. The air distribution cover plate 403, the protrusion 210, and the air distribution plate 402 are sequentially positioned and engaged to fix the air distribution component 400 and the guide ring 200 relatively. Optionally, the air distribution cover plate 403, the protrusion 210, and the air distribution plate 402 are sequentially positioned and engaged in the axial direction of the support shaft 22, with the air distribution cover plate 403 pressing the protrusion 210 against the air distribution plate 402.

[0103] Optionally, when the air distribution component 400 is installed on the chamber body 20, the base plate 401 is connected to the inner wall of the chamber body 20, and both the base plate 401 and the chamber body 20 are provided with openings for the second air inlet pipe 500 to pass through.

[0104] In this embodiment, the gas distributor 400 adopts a split structure, which facilitates the separate opening of the cleaning gas channel 410 and the second gas outlet 420. Moreover, the split parts of the gas distributor 400 are matched with the protrusion 210 of the guide ring 200, which helps to fix the gas distributor 400 and the guide ring 200 relative to each other, without the need for a separate connection operation to fix the guide ring 200.

[0105] Of course, in other embodiments, the air distribution component 400 can also be an integral structure, or the air distribution component 400 can be without the air distribution cover plate 403, and the guide ring 200 can be connected to the air distribution component 400 separately.

[0106] refer to Figure 21As shown in the schematic diagram of the cleaning gas distribution, the cleaning gas converges towards the axis of the support shaft 22, with a higher concentration of cleaning gas in the area near the support shaft 22 and a lower concentration in the area away from the support shaft 22. Therefore, by using the air intake component 10 in this embodiment, the concentration of cleaning gas in the area adjacent to the support shaft 22 can be effectively increased, avoiding cleaning dead zones at the connection between the base 21 and the support shaft 22, which is beneficial to improving the cleaning effect.

[0107] Based on the air intake component 10 disclosed in this application, embodiments of this application also disclose a semiconductor process apparatus, see reference. Figure 2 As shown, the semiconductor process equipment includes a chamber body 20, a base 21, a support shaft 22, and an air intake assembly 10 as described in the above embodiment. The base 21 is disposed inside the chamber body 20, the support shaft 22 passes through the chamber body 20 and is connected to the base 21, and the air intake assembly 10 is sleeved on the outside of the support shaft 22.

[0108] Optionally, refer to Figure 2 and Figure 3 As shown, the chamber body 20 includes an upper cavity 201 and a lower cavity 202 connected together. The upper cavity 201 is located above the lower cavity 202. An annular gap is formed between the upper cavity 201 and the base 21. The support shaft 22 passes through the lower cavity 202.

[0109] In this embodiment, the gas inlet component 10 of the semiconductor process equipment uniformly introduces protective gas into the area below the base 21, i.e., the non-process reaction area. The flow area of ​​the protective gas decreases, and the protective gas is blocked and its speed increases. Therefore, the protective gas further blocks the process gas from diffusing downward, which is beneficial to improving the effect of blocking the diffusion of process gas.

[0110] In this application, the semiconductor process equipment further includes a first ring 31 and a second ring 32. The first ring 31 is sleeved on the outside of the base 21 and connected to the edge of the base 21, while the second ring 32 is connected to the chamber body 20. Optionally, the first ring 31 can be connected to the edge of the base 21 by welding, bonding, or other methods, and the second ring 32 can be connected to the upper chamber 201 by welding, bonding, or other methods. A flow channel b is formed between the first ring 31 and the second ring 32, and the airflow gap a communicates with the flow channel b. Thus, the cleaning gas entering the chamber body 20 through the airflow gap a can enter the upper region of the base 21 through the flow channel b, and the protective gas flowing into the upper region of the base 21 can be drawn away after merging with the process gas.

[0111] Optionally, the width of the flow channel b ranges from 1mm to 10mm.

[0112] In an optional embodiment, refer to Figure 3As shown, the inner wall of the chamber body 20 is provided with an overlapping portion 201a. The second collar 32 directly overlaps with the overlapping portion 201a, and the first collar 31 directly overlaps with the upper surface of the base 21. With this configuration, the overlapping portion 201a directly supports the second collar 32, and the base 21 directly supports the first collar 31. There is no need to connect the first collar 31 and the base 21, nor is there a need to connect the second collar 32 and the chamber body 20.

[0113] Optionally, to prevent the first ring 31 from rotating relative to the base 21, the first ring 31 and the base 21 can be positioned by a positioning pin to prevent the first ring 31 from rotating and shaking; similarly, to prevent the second ring 32 from rotating relative to the chamber body 20, the second ring 32 and the base 21 can also be positioned by a positioning pin to prevent the second ring 32 from rotating and shaking.

[0114] In one optional embodiment, the flow channel b is an annular structure and extends along the axial direction of the base 21.

[0115] In another embodiment, the flow channel b is a bent channel. That is, the flow channel b does not extend along the axial direction of the base 21.

[0116] With this configuration, the flow channel b is a bent channel, which extends the path of the gas flow through the flow channel b, increases the flow resistance during the gas flow process, causes airflow turbulence and local stagnation, and prevents the process gas above the base 21 from entering the area below the base 21 through the flow channel b, effectively preventing the process gas from diffusing downward.

[0117] In an optional embodiment, the first collar 31 is provided with at least one first protrusion structure 31a, and the second collar 32 is provided with at least one second protrusion structure 32a, forming a bent channel between the first protrusion structure 31a and the second protrusion structure 32a. Optionally, the number of first protrusion structures 31a and the number of second protrusion structures 32a can be one or more. Both the first protrusion structure 31a and the second protrusion structure 32a are annular protrusions. Along the plane passing through the axis of the base 21, the cross-sectional shape of the first protrusion structure 31a and the second protrusion structure 32a can be a square structure or other structures. In short, the first protrusion structure 31a protrudes from the surface of the first collar 31, and the second protrusion structure 32a protrudes from the surface of the second collar 32.

[0118] In this embodiment, the first protrusion structure 31a and the second protrusion structure 32a are used to directly form a bent channel, avoiding the need for the first ring 31 and the second ring 32 to have overly complex structures, which helps to simplify the structure of the first ring 31 and the second ring 32.

[0119] Of course, in other embodiments, the flow channel b can also be a bent channel of other shapes, and the flow channel b is not limited to being formed by the first protrusion structure 31a and the second protrusion structure 32a.

[0120] In one alternative embodiment, reference is made to... Figure 9 As shown, there is only one first protrusion structure 31a and one second protrusion structure 32a. The first protrusion structure 31a is disposed on the outer wall surface of the first collar 31, and the second protrusion structure 32a is disposed at the lower end of the second collar 32. With this arrangement, the protective gas entering the flow channel b flows sequentially in the vertically upward direction, in the horizontal direction, and in the vertically upward direction.

[0121] In another embodiment, at least two first protrusions 31a are spaced apart, and a second protrusion 32a extends into the space between two adjacent first protrusions 31a. Optionally, any two adjacent first protrusions 31a form a first groove, and the second protrusions 32a correspond one-to-one with the first grooves, with each second protrusion 32a extending into the corresponding first groove to form a bent channel.

[0122] Or, refer to Figure 10 As shown, at least two second protrusions 32a are spaced apart, and a first protrusion 31a extends into the space between two adjacent second protrusions 32a. Optionally, two adjacent second protrusions 32a form a second groove, and the first protrusions 31a correspond one-to-one with the second grooves, with each first protrusion 31a extending into the corresponding second groove to form a bent channel.

[0123] With this configuration, the protective gas entering the flow channel b flows sequentially in the vertically upward direction, in the horizontal direction, in the vertically downward direction, in the horizontal direction, and in the vertically upward direction.

[0124] In this embodiment, the number of the first protrusion structure 31a or the second protrusion structure 32a is increased, which increases the degree of bending of the flow channel b. The path of the gas flow through the flow channel b is further extended, which further increases the flow resistance during the gas flow process. This can more effectively prevent the process gas above the base 21 from entering the lower area of ​​the base 21 through the flow channel b, and effectively prevent the process gas from diffusing downward.

[0125] Optionally, refer to Figure 2As shown, the semiconductor process equipment also includes an inlet block 23, a chamber cover plate 24, and a spray plate 25, which are connected to the chamber body 20. The inlet block 23 has at least two inlet holes 23a, each used to introduce different types of process gases to achieve different process steps and procedures. The process gases entering through the inlet holes 23a diffuse in the space between the chamber cover plate 24 and the spray plate 25, and are further sprayed onto the base 21 through the spray holes of the spray plate 25.

[0126] Furthermore, a narrow slit is formed between the spray plate 25 and the second ring 32. After the protective gas and process gas flowing into the area above the base 21 through the flow channel b merge, they can flow through the narrow slit to the annular area of ​​the chamber body 20. The chamber body 20 is also provided with an exhaust port that communicates with the annular area, through which the gas in the annular area can be extracted.

[0127] In the scheme of this application, reference is made to Figure 2 As shown, the semiconductor process equipment also includes a drive mechanism 40, which is located outside the chamber body 20. The drive mechanism 40 is connected to the support shaft 22 and can drive the support shaft 22 to raise and lower the base 21 and the first ring 31 to adjust the flow area of ​​the bent channel. The drive mechanism 40 can be a drive component that can provide linear driving force, such as a cylinder, electric cylinder, or linear module.

[0128] Optionally, the housing of the drive mechanism 40 and the chamber body 20 can be connected by welding, bonding or other means. The drive end of the drive mechanism 40 can be directly connected to the lower end of the support shaft 22 by welding, bonding or other means. Alternatively, the drive end of the drive mechanism 40 can be indirectly connected to the lower end of the support shaft 22 through other components.

[0129] Thus, when the drive mechanism 40 drives the support shaft 22 to rise and fall relative to the chamber body 20, the support shaft 22 drives the base 21 and the first ring 31 to rise and fall relative to the second ring 32. Therefore, the width of the flow channel b formed by the first ring 31 and the second ring 32 changes, thereby adjusting its flow area.

[0130] It should be noted that the lifting and lowering of the first ring 31 relative to the second ring 32 can only adjust the width of a local channel in the flow channel b, and the plane containing this part of the channel intersects the axis of the base 21. Optionally, the drive mechanism 40 can only adjust the width of the horizontal channel portion in the flow channel b.

[0131] Using this embodiment, the drive mechanism 40 can be adjusted as needed to adjust the flow area of ​​the flow channel b, thereby adjusting the flow resistance of the flow channel b and realizing the adjustment of gas flow rate and blocking effect.

[0132] Specifically, when a large volume of process gas is introduced, the process pressure is relatively low. The drive mechanism 40 drives the support shaft 22, causing the base 21 and the first ring 31 to descend. This increases the flow area of ​​the flow channel b, reduces the flow resistance, and ensures a constant blocking effect. Similarly, when a small volume of process gas is introduced, the process pressure is relatively high. The drive mechanism 40 drives the support shaft 22, causing the base 21 and the first ring 31 to rise. This decreases the flow area of ​​the flow channel b, increases the flow resistance, and maintains a constant blocking effect. Therefore, when different volumes of process gas are introduced, the flow area of ​​the flow channel b can be adjusted by regulating the drive mechanism 400 as needed, ensuring a constant gas flow rate and blocking effect.

[0133] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. An air intake assembly for a semiconductor process apparatus, the semiconductor process apparatus comprising a chamber body (20), a base (21), and a support shaft (22), the base (21) being disposed within the chamber body (20), the support shaft (22) penetrating the chamber body (20) and connected to the base (21), the air intake assembly (10) being used to introduce gas into the chamber body (20), characterized in that, The intake assembly (10) includes: A transition ring (100) is used to connect the support shaft (22). The transition ring (100) is provided with a protective gas channel (110) for introducing protective gas. The transition ring (100) is provided with a plurality of first vent holes (120) at intervals along its circumference. The protective gas channel (110) is connected to each of the first vent holes (120). A guide ring (200) is fitted over the outside of the support shaft (22), and at least a portion of the guide ring (200) is located above the adapter ring (100). An airflow gap (a) is formed between the guide ring (200) and the support shaft (22) for the flow of the protective gas. The airflow gap (a) is connected to each of the first air outlets (120). The flow area of ​​the airflow gap (a) away from the first air outlet (120) is smaller than the flow area of ​​the airflow gap (a) close to the first air outlet (120).

2. The intake assembly according to claim 1, characterized in that, The inner wall surface of the guide ring (200) includes a guide surface (200a) located above the adapter ring (100). Along the air outlet direction of the first air outlet (120), the distance from the guide surface (200a) to the axis of the guide ring (200) decreases.

3. The intake assembly according to claim 1, characterized in that, The protective gas channel (110) includes at least two stages of first gas distribution channels. Each stage of the first gas distribution channel has a first inlet end and at least two first outlet ends. In two adjacent stages of the first gas distribution channels, the first outlet end of the previous stage of the first gas distribution channel is connected to the first inlet end of the next stage of the first gas distribution channel. The air intake assembly (10) further includes a first air intake pipe (300), which is connected to the adapter ring (100). The first air intake end of the first-stage first air distribution channel is connected to the first air intake pipe (300), and the first air outlet end of the last-stage first air distribution channel is connected to each of the first air outlet holes (120).

4. The intake assembly according to claim 3, characterized in that, Each first air distribution channel has a first air inlet and two first air outlets. Each first air distribution channel extends along the circumference of the transition ring (100), and the distance between the first air inlet and the two first air outlets of the same first air distribution channel is equal in the circumference of the transition ring (100).

5. The intake assembly according to any one of claims 1-4, characterized in that, The air intake assembly (10) further includes an air distribution component (400), which is an annular structure. The air distribution component (400) is sleeved on the guide ring (200) and connected to the chamber body (20). The gas distributor (400) is provided with a cleaning gas channel (410) for introducing cleaning gas. The gas distributor (400) is provided with a plurality of second air outlets (420) at intervals along its circumference. The cleaning gas channel (410) is connected to each of the second air outlets (420).

6. The intake assembly according to claim 5, characterized in that, The outlet direction of each of the second air outlets (420) intersects the first direction (A) to form a rotating airflow of cleaning gas flowing out through the cleaning gas channel (410) and each of the second air outlets (420). The first direction (A) is perpendicular to the axis of the gas distributor (400), and the first direction (A) is the direction from the center of the inlet end of the second air outlet (420) to the axis of the gas distributor (400).

7. The intake assembly according to claim 5, characterized in that, The cleaning gas channel (410) includes at least two stages of second gas distribution channels. Each stage of the second gas distribution channel has a second inlet and at least two second outlets. In two adjacent stages of the second gas distribution channels, the second outlet of the previous stage is connected to the second inlet of the next stage. The air intake assembly (10) further includes a second air intake pipe (500), which is connected to the air distribution component (400). The second air intake end of the first stage second air distribution channel is connected to the second air intake pipe (500), and the second air outlet end of the last stage second air distribution channel is connected to each of the second air outlets (420).

8. The intake assembly according to claim 7, characterized in that, Each level of the second air distribution channel has a second air inlet and two second air outlets. Each level of the second air distribution channel extends along the circumference of the air distribution component (400), and the distance between the second air inlet and the two second air outlets of the same second air distribution channel is equal in the circumference of the air distribution component (400).

9. The intake assembly according to claim 7, characterized in that, The second air outlet of the last stage second air distribution channel is connected to at least two second air outlets (420), and the air outlet directions of the at least two second air outlets (420) connected to the same second air outlet are different.

10. The intake assembly according to claim 5, characterized in that, The gas distribution component (400) includes a base plate (401), a gas distribution plate (402), and a gas distribution cover plate (403). The base plate (401) is connected to the gas distribution plate (402), and the base plate (401) and the gas distribution plate (402) together form the protective gas channel (110). The gas distribution cover plate (403) is disposed on the side of the gas distribution plate (402) facing away from the base plate (401). The outer wall surface of the guide ring (200) is provided with a protrusion (210). The air distribution cover (403), the protrusion (210) and the air distribution plate (402) are sequentially limited and cooperated to fix the air distribution component (400) and the guide ring (200) relative to each other.

11. A semiconductor process apparatus, characterized in that, The device includes a chamber body (20), a base (21), a support shaft (22), and an air intake assembly (10) as described in any one of claims 1-10. The base (21) is disposed inside the chamber body (20), the support shaft (22) passes through the chamber body (20) and is connected to the base (21), and the air intake assembly (10) is sleeved on the outside of the support shaft (22).

12. The semiconductor process equipment according to claim 11, characterized in that, The semiconductor process equipment further includes a first ring (31) and a second ring (32). The first ring (31) is sleeved on the outside of the base (21) and is connected to the edge of the base (21). The second ring (32) is connected to the chamber body (20). A flow channel (b) is formed between the first ring (31) and the second ring (32). The flow channel (b) is a bent channel. The airflow gap (a) is connected to the flow channel (b).

13. The semiconductor process equipment according to claim 12, characterized in that, The first collar (31) is provided with at least one first protrusion structure (31a), and the second collar (32) is provided with at least one second protrusion structure (32a). The bent channel is formed between the first protrusion structure (31a) and the second protrusion structure (32a).

14. The semiconductor process equipment according to claim 13, characterized in that, At least two of the first protrusions (31a) are spaced apart, and the second protrusion (32a) extends between two adjacent first protrusions (31a); Alternatively, at least two second protrusions (32a) are spaced apart, and the first protrusion (31a) extends between two adjacent second protrusions (32a).

15. The semiconductor process equipment according to claim 12, characterized in that, The semiconductor process equipment also includes a drive mechanism (40), which is connected to the support shaft (22). The drive mechanism (40) can drive the support shaft (22) to move the base (21) and the first collar (31) up and down to adjust the flow area of ​​the bent channel.

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