MPCVD chemical vapor deposition system and MPCVD chemical vapor deposition method

Abstract

The invention relates to an MPCVD chemical vapor deposition system and an MPCVD chemical vapor deposition method.The MPCVD chemical vapor deposition system comprises a reaction cavity, a base table, a housing, an inner conductor and an outer conductor, the base table is arranged in the reaction cavity, the upper end of the reaction cavity is open, the housing covers the open end of the reaction cavity, the hemispherical inner wall face of the housing serves as a reflecting face, and the inner conductor is arranged on the base table; the reflecting surface is opposite to the top surface of the base station, a resonance table is arranged between the bottom surface of the base station and the inner conductor, and the inner conductor and the outer conductor are coaxially sleeved together; the MPCVD chemical vapor deposition method comprises the step of generating the deposition film on the surface of the base table by using the system. By adopting the technical scheme provided by the invention, the energy of the microwaves can be converged on the top surface of the base station, the microwaves can directly form plasmas on the surface layer of the base station and deposit a thin film, the density and the thickness of the deposited thin film are increased, and the deposited thin film can form a high-density deposited thin film on the surface of the base station with a relatively large area.

Description

Technical Field

[0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular relates to an MPCVD chemical vapor deposition system and an MPCVD chemical vapor deposition method. Background Art

[0002] Microwave plasma chemical vapor deposition, abbreviated as MPCVD, is a process technology that uses a waveguide to pass microwaves generated by a microwave generator into a deposition chamber through an isolator, excites gas molecules in the deposition chamber to ionize and generate plasma, which reacts on the surface of the substrate in the deposition chamber to generate a solid material film, and then deposits solid materials.

[0003] For example, the patent document with the authorization announcement number "CN110306171B" discloses a deposition chamber and MPCVD device with improved gas distribution. The deposition chamber includes a base, an outer cover and a deposition table; the outer cover is sealed and mounted on the base to enclose a reaction chamber with the base; the deposition table is arranged on the side of the base facing the reaction chamber; the base is provided with an inlet channel and an exhaust channel connected to the reaction chamber; the deposition chamber with improved gas distribution also includes an air guide channel located inside the outer cover and extending to the upper part of the reaction chamber; the air guide channel is connected to the air inlet channel; the upper part of the air guide channel is connected to the reaction chamber to guide the gas input from the air inlet channel to the upper part of the reaction chamber. With this patented technical solution, the air guide channel guides the gas entering the deposition chamber upward, ensuring that the gas passes through the deposition table before being discharged from the exhaust channel, thereby improving the utilization rate of the gas and the reaction efficiency of the deposition device.

[0004] However, the existing patent technologies related to the MPCVD system focus more on improving the gas utilization efficiency and the uniformity of the deposited film. However, when the substrate area is large, the thickness and density of the deposited film are correspondingly reduced due to the uniform distribution of the deposited layer on the substrate surface. In addition, the existing MPCVD system is difficult to provide the rapid deposition conditions required by high microwave electric field intensity. It is difficult for microwaves to directly form a large-size, high-density plasma on the substrate surface. Microwaves also make the density of the final deposited film smaller. Summary of the invention

[0005] In order to solve the above technical problems, the present invention provides an MPCVD chemical vapor deposition system and an MPCVD chemical vapor deposition method.

[0006] The present invention provides an MPCVD chemical vapor deposition system, comprising a reaction chamber, a base, a cover, an inner conductor and an outer conductor. The reaction chamber is provided with a base, the upper end of the reaction chamber is open, the cover covers the open end of the reaction chamber, the hemispherical inner wall surface of the cover is used as a reflection surface, the reflection surface and the top surface of the base are opposite to each other, a resonance table is arranged between the bottom surface of the base and the inner conductor, and the inner conductor is also coaxially mounted together with the outer conductor.

[0007] The resonance platform is also supported in the reaction chamber through a quartz window, and the inner conductor also passes through the quartz window.

[0008] The quartz window is in a cylindrical shape as a whole.

[0009] The resonance platform is made of metal.

[0010] The resonance platform is in the shape of a cylinder as a whole.

[0011] The inner conductor and the outer conductor are coaxially sleeved together, and the end of the outer conductor is flush with the end of the inner conductor.

[0012] One end of the outer conductor is also fixedly connected to the bottom surface of the reaction chamber, and the other end of the outer conductor extends downward along the vertical direction.

[0013] In addition, the present invention also provides an MPCVD chemical vapor deposition method, comprising the following steps:

[0014] Step 1: providing a reaction chamber, a base, a cover, an inner conductor and an outer conductor, wherein the reaction chamber is provided with a base, the upper end of the reaction chamber is open, the cover covers the open end of the reaction chamber, the hemispherical inner wall surface of the cover is used as a reflection surface, the reflection surface and the top surface of the base are opposite to each other, a resonance table is provided between the bottom surface of the base and the inner conductor, and the inner conductor is coaxially sheathed with the outer conductor;

[0015] Step 2: Transmit the microwaves to the reaction chamber via the outer conductor and the inner conductor in sequence, then transmit the microwaves to the top surface of the base via the reflecting surface, and finally excite the microwaves on the top surface of the base to form a plasma deposited film.

[0016] The MPCVD chemical vapor deposition method further includes the following steps: causing the microwave to resonate between the resonance platform and the reflection surface, and the microwave is focused through the reflection surface of the cover shell.

[0017] The transmission mode of the microwaves transmitted from the reflective surface of the housing to the top surface of the base is TM 01 model.

[0018] The beneficial effect of the present invention lies in that: by adopting the technical solution provided by the present invention, microwaves are transmitted to the reaction chamber through the outer conductor and the inner conductor in sequence, and then the microwaves are transmitted to the top surface of the base through the reflecting surface, thereby avoiding the dissipation or escape of microwave energy during air propagation. The spherical reflecting surface of the cover shell enables the energy of the microwaves to be gathered on the top surface of the base. Since the energy of the microwaves is gathered together, the electric field strength on the surface of the base and its surroundings is greatly enhanced, so that the microwaves can directly excite the surface layer of the base to form a deposited film, and the density and thickness of the deposited film are increased, and it is beneficial to expand the surface area of ​​the base, so that the deposited film forms a high-density deposited film on the surface of the base with a larger area. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a front view of the present invention;

[0020] Figure 2 This is the computer simulation result diagram of the electric field distribution along the axial direction of the base;

[0021] Figure 3 This is the computer simulation result diagram of the electric field distribution along the radial direction of the base;

[0022] Figure 4 It is a working principle diagram of the present invention.

[0023] In the figure: 1-reaction chamber, 2-base, 3-cover, 4-inner conductor, 5-outer conductor, 6-resonance table, 7-quartz window. DETAILED DESCRIPTION

[0024] The technical solution of the present invention is further described below in conjunction with the accompanying drawings, but the claimed protection scope is not limited to the above;

[0025] The present invention provides an MPCVD chemical vapor deposition system, such as Figures 1 to 4 As shown, it includes a reaction chamber 1, a base 2, a cover 3, an inner conductor 4 and an outer conductor 5. The base 2 is arranged in the reaction chamber 1, the upper end of the reaction chamber 1 is open, and the cover 3 covers the open end of the reaction chamber 1. The hemispherical inner wall surface of the cover 3 is used as a reflection surface, and the reflection surface and the top surface of the base 2 are opposite to each other. A resonance table 6 is arranged between the bottom surface of the base 2 and the inner conductor 4, and the inner conductor 4 and the outer conductor 5 are coaxially mounted together.

[0026] By adopting the technical solution provided by the present invention, microwaves are transmitted to the reaction cavity through the outer conductor and the inner conductor in sequence, and then transmitted to the top surface of the base through the reflecting surface, thereby avoiding the dissipation or escape of microwave energy during air propagation. The microwave energy can be gathered on the top surface of the base through the spherical reflecting surface of the cover shell. Since the microwave energy is gathered together, the electric field strength on the surface of the base and its surroundings is greatly enhanced, so that the microwaves can directly excite the surface layer of the base to form a deposited film, and the density and thickness of the deposited film are increased, and it is beneficial to expand the surface area of ​​the base, so that the deposited film forms a high-density deposited film on the surface of the base with a larger area.

[0027] Specifically, the resonance table 6 is also supported in the reaction chamber 1 through the quartz window 7, and the inner conductor 4 also passes through the quartz window 7. The quartz window 7 is cylindrical in shape. According to the technical solution of the present invention, the quartz window 7 is used to support the resonance table 6, and the resonance table 6 supports the base 2, so that the base 2 maintains a stable posture and stable positioning in the reaction chamber.

[0028] In addition, the material of the resonance platform 6 is preferably metal. The resonance platform 6 is cylindrical in shape. The technical solution of the present invention is adopted to enable microwaves to resonate between the resonance platform 6 and the cover 3, and then part of the microwaves are gathered on the surface of the base 2 by the reflection surface, further enhancing the electric field strength of the top surface of the base 2. In addition, part of the microwaves can be reflected to the surface of the resonance platform 6 and resonate with other microwaves, which is conducive to enhancing the electric field strength of the space between the surface of the resonance platform 6 and the reflection surface.

[0029] In addition, the inner conductor 4 and the outer conductor 5 are coaxially sleeved together, and the end of the outer conductor 5 is flush with the end of the inner conductor 4. One end of the outer conductor 5 is also fixedly connected to the bottom surface of the reaction chamber 1, and the other end of the outer conductor 5 extends downward in the vertical direction. Preferably, the base 2 is cylindrical in shape as a whole. The outer diameter of the base 2 is not less than 100 mm.

[0030] In addition, the present invention also provides an MPCVD chemical vapor deposition method, comprising the following steps:

[0031] Step 1: providing a reaction chamber 1, a base 2, a cover 3, an inner conductor 4 and an outer conductor 5, wherein the base 2 is arranged in the reaction chamber 1, the upper end of the reaction chamber 1 is open, the cover 3 covers the open end of the reaction chamber 1, the hemispherical inner wall surface of the cover 3 is used as a reflection surface, the reflection surface and the top surface of the base 2 are opposite to each other, a resonance table 6 is arranged between the bottom surface of the base 2 and the inner conductor 4, and the inner conductor 4 and the outer conductor 5 are coaxially sheathed together;

[0032] Step 2: Transmit the microwaves to the reaction chamber 1 through the outer conductor 5 and the inner conductor 4 in sequence, and then transmit the microwaves to the top surface of the base 2 through the reflecting surface, and finally excite the microwaves on the top surface of the base 2 to form a plasma deposited film.

[0033] Specifically, the MPCVD chemical vapor deposition method further includes the following steps: The MPCVD chemical vapor deposition method further includes the following steps: causing the microwave to resonate between the resonant platform 6 and the reflective surface, and the microwave is focused through the reflective surface of the cover 3. The transmission mode of the microwave transmitted to the top surface of the base 2 via the reflective surface is TM 01 model.

[0034] Figure 2 , Figure 3 The electric field distribution results of the present invention after being simulated by computer are shown respectively. In the figure, the darker the grayscale, the stronger the electric field strength is. Figure 2 , Figure 3 It can be seen that the dark gray part in the figure occupies the vast majority, indicating that compared with the prior art, the present invention enables the deposited film to form a high-density deposited film on a larger area of ​​the base surface.

[0035] like Figure 4 As shown, the base 2 is set at point F of the spatial coordinate system, and the cover 3 is set at point O of the spatial coordinate system. When the microwave is emitted into the inner spherical surface of the cover 3, the microwave can be reflected and focused on the surface of the base 2, so that the microwave can directly form plasma on the surface of the base and deposit a thin film, thereby increasing the density and thickness of the deposited film.

Claims

1. An MPCVD chemical vapor deposition system, characterized in that: The invention comprises a reaction chamber (1), a base (2), a cover (3), an inner conductor (4) and an outer conductor (5); the reaction chamber (1) is provided with a base (2); the upper end of the reaction chamber (1) is open; the cover (3) covers the open end of the reaction chamber (1); the hemispherical inner wall surface of the cover (3) is used as a reflection surface; the reflection surface and the top surface of the base (2) are opposite to each other; a resonance table (6) is provided between the bottom surface of the base (2) and the inner conductor (4); the inner conductor (4) and the outer conductor (5) are coaxially mounted together.

2. The MPCVD chemical vapor deposition system according to claim 1, characterized in that: The resonant platform (6) is also supported in the reaction chamber (1) via a quartz window (7), and the inner conductor (4) also passes through the quartz window (7).

3. The MPCVD chemical vapor deposition system according to claim 2, characterized in that: The quartz window (7) is in the shape of a cylinder as a whole.

4. An MPCVD chemical vapor deposition system according to claim 1 or 2, characterized in that: The resonance platform (6) is made of metal.

5. The MPCVD chemical vapor deposition system according to claim 4, characterized in that: The resonance platform (6) is in the shape of a cylinder as a whole.

6. The MPCVD chemical vapor deposition system according to claim 1, characterized in that: The inner conductor (4) and the outer conductor (5) are coaxially sleeved together, and the end of the outer conductor (5) is flush with the end of the inner conductor (4).

7. The MPCVD chemical vapor deposition system according to claim 1, characterized in that: One end of the outer conductor (5) is also fixedly connected to the bottom surface of the reaction chamber (1), and the other end of the outer conductor (5) extends downward in a vertical direction.

8. An MPCVD chemical vapor deposition method, characterized in that: The following steps are involved: Step 1: providing a reaction chamber (1), a base (2), a cover (3), an inner conductor (4) and an outer conductor (5), wherein the reaction chamber (1) is provided with a base (2), the upper end of the reaction chamber (1) is open, the cover (3) covers the open end of the reaction chamber (1), the hemispherical inner wall surface of the cover (3) is used as a reflection surface, the reflection surface and the top surface of the base (2) are opposite to each other, a resonance table (6) is provided between the bottom surface of the base (2) and the inner conductor (4), and the inner conductor (4) and the outer conductor (5) are coaxially mounted together; Step 2: The microwaves are transmitted to the reaction chamber (1) in sequence through the outer conductor (5) and the inner conductor (4), and then transmitted to the top surface of the base (2) through the reflecting surface, and finally excited on the top surface of the base (2) to form a plasma deposited film.

9. The MPCVD chemical vapor deposition method according to claim 8, characterized in that: The MPCVD chemical vapor deposition method further comprises the following steps: causing the microwave to resonate between the resonance platform (6) and the reflection surface, and the microwave is focused through the reflection surface of the cover shell (3).

10. The MPCVD chemical vapor deposition method according to claim 8, characterized in that: The transmission mode of the microwave transmitted to the top surface of the base (2) via the reflective surface of the cover (3) is TM 01 model.

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