Monitoring and Control Method for the Operating Status of Sapphire Annealing Furnace

Abstract

The present invention relates to the technical field of on-line monitoring and control, and is a method for monitoring and controlling the operating state of a sapphire annealing furnace. The specific method includes: performing feature matching processing on power supply ripple data to obtain a clock offset compensation value, and synchronizing the time stamps of the power supply ripple data and the thermostat data through the clock offset compensation value; calculating the residual clock offset of the distributed thermostat, establishing a first-round monitoring model, and performing a first-round evaluation on the operating state of the annealing furnace; reconstructing the substrate contact stress field of the sapphire and performing a second-round evaluation on the operating state of the annealing furnace; dynamically adjusting the control parameters of the annealing furnace according to the results of the first-round evaluation and the second-round evaluation. The present invention solves the problems of power supply fluctuations, clock drift, and thermal stress monitoring failure caused by the aging of the annealing furnace in the prior art.

Description

Technical Field

[0001] The present invention relates to the technical field of on-line monitoring and control, and is a method for monitoring and controlling the operating state of a sapphire annealing furnace. Background Art

[0002] During the annealing process of sapphire, with the long-term high-frequency operation of the annealing furnace, the core components inside the annealing furnace will deteriorate in function due to material fatigue and component performance decline: the non-linear characteristics of the rectifier, filter and switching devices inside the power supply system intensify with the service time, the capacitance attenuation is superimposed with the external electromagnetic interference coupling, resulting in the decline of the smoothing ability of the output current and voltage, triggering the deterioration of power supply stability. Its unstable output distorts the electric field at the electrode contact interface and interferes with the lattice stress distribution, leading to an uncontrollable increase in the dislocation density of the sapphire lattice during the annealing process; at the same time, for the sapphire annealing process with extremely high temperature accuracy requirements, the quartz oscillator of the distributed temperature controller in the annealing furnace generates lattice defects due to high-temperature thermal stress, and the long-term aging causes an increase in the phase noise of the clock signal. The traditional clock compensation algorithm does not incorporate the dynamic change parameters of the thermal field gradient and cannot correct the sub-second clock offset, resulting in an exponential diffusion of the timing mismatch error between the power supply and temperature control data with aging, which will lead to the failure of the mapping relationship between the annealing process parameters and the lattice defect state. The prior art lacks a dynamic compensation mechanism for aging effects, resulting in a continuous deterioration of the monitoring system accuracy with the increase of the service cycle. It not only fails to achieve the collaborative optimization of lattice stress field reconstruction and temperature control decision-making, but also leads to a lag in the early warning of abnormal conditions such as poor electrode contact and furnace body deformation, seriously restricting the quality consistency of sapphire crystal annealing and the service life of the equipment. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to propose a method for monitoring and controlling the operating state of a sapphire annealing furnace in view of the problems of power supply fluctuations, clock drift and thermal stress monitoring failure caused by the aging of the annealing furnace in the prior art.

[0004] In order to achieve the above object, the technical solution of the method for monitoring and controlling the operating state of the sapphire annealing furnace of the present invention includes the following steps:

[0005] S1: Collect the power supply ripple data of the annealing furnace and perform feature matching processing on the power supply ripple data;

[0006] S2: Determine the clock compensation strategy of the distributed temperature controller according to the feature matching result, obtain the clock offset compensation value according to the clock compensation strategy, and synchronize the time stamps of the power supply ripple data and the temperature controller data through the clock offset compensation value;

[0007] S3: After the time stamp synchronization is completed, re-extract the harmonic phase deviation of the power supply ripple data of the annealing furnace and calculate the residual clock offset of the distributed temperature controller, establish the first-round monitoring model, and conduct the first-round evaluation of the operating state of the annealing furnace;

[0008] S4: Reconstruct the substrate contact stress field of the sapphire, establish a secondary monitoring model, input the substrate contact stress of the sapphire into the secondary monitoring model to conduct a secondary assessment of the operating state of the annealing furnace;

[0009] S5: Dynamically adjust the operating state of the annealing furnace according to the results of the primary assessment and the secondary assessment.

[0010] Specifically, S1 includes the following specific steps:

[0011] S11: Preset the monitoring frequency range and embed an aluminum nitride insulating layer surface acoustic wave filter at the power input end;

[0012] Preferably, the aluminum nitride insulating layer surface acoustic wave filter can effectively suppress the high-frequency electromagnetic noise generated by the heating rods in the annealing furnace and improve the accuracy of the power supply ripple data;

[0013] S12: Start the annealing furnace and make it enter the normal working state, and obtain the ripple current signal of the operating annealing furnace within the monitoring frequency range through a temperature-resistant current probe;

[0014] S13: Convert the collected ripple current signal into ripple spectrum data, remove the noise in the ripple spectrum data through a filtering algorithm, and simultaneously normalize the ripple spectrum data after noise processing;

[0015] S14: Divide the ripple spectrum data into multiple unit ripple spectra, capture dynamic feature points in each unit ripple spectrum, and import the dynamic feature points into the waveform similarity index calculation strategy to perform feature matching processing on the power supply ripple data according to the waveform similarity index;

[0016] The dynamic feature points include: the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value at the curvature inflection point of the current unit ripple spectrum;

[0017] Preferably, the waveform similarity index calculation strategy is:

[0018] ;

[0019] where DW is the waveform similarity index;

[0020] are respectively the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value at the curvature inflection point of the current unit ripple spectrum;

[0021] is the average level of the maximum slope values of the rising edges of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the maximum slope values of the rising edges of all unit ripple spectra during the last historical operation of the annealing furnace;

[0022] is the average level of the ripple peak voltages of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the ripple peak voltages of all unit ripple spectra during the last historical operation of the annealing furnace;

[0023] is the average value of the time values at the inflection points of curvature of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the time values at all inflection points of curvature during the last historical operation of the annealing furnace;

[0024] are the slope weight, amplitude weight, and time weight respectively;

[0025] S15: Preset the similarity deviation baseline value and dynamically update the similarity deviation baseline value through the exponential smoothing method When the waveform similarity index of the unit ripple spectrum is greater than the similarity deviation baseline value mark the current unit ripple spectrum as having abnormal ripple characteristics.

[0026] Specifically, the clock compensation strategy includes: extracting the feature matching results of each unit ripple spectrum, and when no abnormal ripple feature marks or discontinuous unit ripple spectra with abnormal ripple feature marks are detected, implementing the first clock compensation strategy;

[0027] When two consecutive unit ripple spectra are both marked as having abnormal ripple characteristics, implement the second clock compensation strategy.

[0028] Specifically, the first clock compensation strategy is specifically:

[0029] A1: Set up an infrared temperature measurement matrix, read the 32-point infrared temperature measurement data of the annealing furnace, and calculate the radial temperature gradient based on the 32-point infrared temperature measurement data ;

[0030] A2: Identify the maximum temperature gradient region of the annealing furnace through the temperature gradient identification strategy ;

[0031] Preferably, the temperature gradient identification strategy is specifically:

[0032] where r is the radial coordinate, ;

[0033] A3: Read the temperature field gradient of the annealing furnace every 2 ms, extract the maximum temperature gradient region , and calculate the first offset compensation value for the clocks of each distributed temperature controller;

[0034] Preferably, the calculation strategy for the first offset compensation value is: , where is the first offset compensation value, k is the first proportionality coefficient, , are the actual growth rate and the nominal growth rate of the sapphire crystal, respectively;

[0035] It should be noted that thermal stress causes distortion of the sapphire lattice, resulting in frequency offset of the crystal resonator and ultimately causing clock cumulative error;

[0036] A temperature field gradient of 1 °C causes a frequency offset of 0.02 ppm in the vibration frequency of the sapphire lattice;

[0037] There is a linear relationship between the frequency offset of the sapphire lattice vibration and the clock error. Considering the influence of the combined growth rate on the accumulation of thermal stress, a correction term is introduced;

[0038] A4: Perform 500 timestamp correction processes per second according to the first offset compensation value, specifically: ;

[0039] where are the clock timestamps before and after correction by the first offset compensation value, respectively; is the sign function.

[0040] It should be noted that the sign function reflects the influence of the thermal gradient direction on clock drift. The clock speeds up in the heating zone and slows down in the cooling zone;

[0041] Specifically, the second clock compensation strategy is as follows:

[0042] B1: Register all distributed temperature controllers in the system, assign a unique device identifier to each device, and initialize the Lamport logical clock of each device to 0, where i represents the device identifier of the device;

[0043] B2: Periodically collect the temperature data TE of each temperature controller and calculate the derivative of the temperature change rate of each temperature controller;

[0044] B3: Embed the Lamport logical clock value of the current device in each communication message , the derivative of the temperature change rate and the device identifier;

[0045] B4: The thermostat device sends the generated message to other related devices at a preset time interval. At the same time, each device receives the messages from other devices and records the reception time;

[0046] B5: When the device with device identifier i receives the message sent by the device with device identifier j, perform the Lamport logical clock update process, specifically: , where is the updated logical clock value of the device with device identifier i; is the Lamport logical clock value of the device with device identifier j carried in the message;

[0047] B6: When each device receives the messages sent by all other devices except itself, perform consistency verification on the derivatives of the temperature change rates of all received messages, specifically including: calculating the average value of the derivatives of the temperature change rates of all received messages , according to the average value calculate the deviation value between the derivative of the temperature change rate of each received message and the average value ;

[0048] B7: Through the least squares method, evaluate and obtain the second proportionality coefficient h according to the deviation values of multiple devices, and calculate the second offset compensation value according to the second proportionality coefficient , where is the second offset compensation value of the device with device identifier i;

[0049] Preferably, the calculation strategy of the second offset compensation value : ;

[0050] B8: Calculate the second offset compensation value of each device root, and dynamically update the timestamp of the temperature data of each device, specifically: , where are the timestamps before and after dynamic update according to the second offset compensation value respectively.

[0051] Specifically, S3 includes the following specific steps:

[0052] S31: After the timestamp synchronization is completed, re-extract the harmonic phase deviation mean , the harmonic frequency mean and the harmonic current of the power supply ripple data marked with abnormal ripple characteristics in the annealing furnace;

[0053] S32: Calculate and obtain the residual clock offset of the distributed thermostat , establish the first-round monitoring model, and conduct the first-round evaluation of the operating status of the annealing furnace;

[0054] Preferably, the residual clock offset is calculated through the temperature dependence of the phonon group velocity, specifically: ;

[0055] is the residual clock offset. It should be noted that there is a residual error in the clock synchronization between distributed thermostats, that is, a small time offset still exists after being processed by the clock compensation algorithm;

[0056] is the heater length; is the function of the phonon group velocity with respect to temperature, which describes the velocity of the collective motion of phonons in the crystal and is closely related to the lattice vibration and heat conduction of the sapphire crystal;

[0057] is the change rate of the phonon group velocity with temperature;

[0058] is the temperature change amount, which reflects the change of temperature in the system. The temperature change will cause the change of the phonon group velocity, and then cause the clock offset;

[0059] It should be noted that reflects the health status of the time synchronization system as an independent parameter; its abnormal growth will be earlier than the threshold of HIT and can play an early warning role in the first-round evaluation; in the multi-parameter monitoring system, provides direct evidence of the abnormality in the time dimension, while HIT reflects the comprehensive effect of multi-physical field coupling.

[0060] The first-round monitoring model includes: stress impact assessment layer, shock resistance assessment layer, and first-round control protocol trigger layer;

[0061] Import the harmonic phase shift mean value and the residual clock offset into the stress impact assessment layer, and output the evaluation result, specifically: ;

[0062] represents the carrier mobility related to the crystal monitoring direction. Preferably, the crystal monitoring direction is the

[0001] direction, describes the migration ability of carriers in this direction under the action of an electric field; is the thermal strain rate; is the conversion coefficient;

[0063] It should be noted that the stress influence evaluation layer is used to evaluate the thermal diffusion effect caused by the stress change rate;

[0064] Obtain the temperature at the edge of the sapphire crystal and the temperature at the center of the sapphire crystal and import them into the impact resistance evaluation layer, and the output evaluation result is specifically: ; is the failure critical coefficient; is the thermal resistance coefficient of the sapphire crystal; is the thermal conductivity of the sapphire crystal in the vertical direction;

[0065] are the temperature at the edge of the sapphire crystal and the temperature at the center of the sapphire crystal respectively;

[0066] The difference of represents the temperature gradient between the crystal edge and the center. It should be noted that the temperature gradient reflects the non-uniformity of the temperature distribution in the crystal growth environment;

[0067] The triggering strategy of the first-round control protocol trigger layer is specifically: when the output result of the stress influence evaluation layer is greater than the output result of the impact resistance evaluation layer, output that the operating state of the annealing furnace is abnormal and trigger the red emergency rescue protocol of the sapphire lattice;

[0068] Preferably, the red emergency rescue protocol of the sapphire lattice includes: immediately stop the machine and start the emergency inspection.

[0069] When the output result of the stress influence evaluation layer is less than or equal to the output result of the impact resistance evaluation layer, enter the second-round monitoring model.

[0070] Specifically, in S4, the reconstruction of the substrate contact stress field of the sapphire is specifically:

[0071] ;

[0072] is the substrate contact stress; is the piezoelectric constant; are the vacuum permittivity and the relative permittivity of sapphire respectively; A is the electrode area.

[0073] Specifically, in S4, the second-round monitoring model includes:

[0074] Calculate and obtain the annealing health index HIT of the sapphire, and set the first-level annealing health threshold and the second-level annealing health threshold , where ;

[0075] Compare the annealing health index of the sapphire with the first-level annealing health threshold Compare. When the annealing health index of sapphire is greater than or equal to the first-level annealing health threshold trigger the orange rescue protocol;

[0076] Preferably, the triggering of the orange rescue protocol includes: operating the annealing furnace with a limited load and conducting a special inspection on the aging degree of the annealing furnace within 72 hours;

[0077] When the annealing health index of sapphire is less than the first-level annealing health threshold and greater than or equal to the second-level annealing health threshold trigger the yellow rescue protocol;

[0078] When the annealing health index of sapphire is less than the second-level annealing health threshold output that the operating state of the annealing furnace is normal.

[0079] Preferably, the calculation strategy of the annealing health index HIT of the sapphire is specifically as follows:

[0080]

[0081] wherein, is the change rate of the electrode contact stress, indicating how fast the electrode contact stress changes with time and reflecting the dynamic change of the electrode contact state;

[0082] is the second derivative of the phonon group velocity with respect to temperature, reflecting the non-linear characteristic of the phonon group velocity changing with temperature;

[0083] are the start time and end time of the evaluation of the annealing health index respectively.

[0084] Specifically, the yellow rescue protocol includes: The yellow rescue protocol includes: opening the annular multi-point nozzles evenly arranged around the support frame in the annealing furnace, setting the total injection gas flow rate to 0.15 times the effective volume of the furnace chamber, and at the same time setting the gas flow rate ratio between the top of the support frame and the bottom of the annealing furnace to 3:1 to inhibit the concentration gradient caused by the rising of the hot air flow, and maintaining the outlet pressure of the annular multi-point nozzles within the range of 0.2 - 0.3 MPa to uniformly inject the mixed gas of Ar and hydrogen into the annealing furnace in layers; wherein, there are 12 groups of the annular multi-point nozzles, covering the entire axial range of the support frame of the annealing furnace base.

[0085] It should be noted that the first-round evaluation conducts real-time early warning for the sudden damage of sapphire, such as lattice fracture;

[0086] The secondary round of evaluation is used to identify the cumulative damage to sapphire caused by the uneven thermal dynamic field in the annealing furnace due to the aging of the annealing furnace, the increase in electrode resistance, and the uneven current, which can quantify the coupling strength between the dynamic stress and the nonlinear vibration of the sapphire lattice based on a 72-hour sliding window calculation, and conduct long-term health assessment and early warning;

[0087] It should be noted that the dual-channel monitoring mechanism of the first round of evaluation and the secondary round of evaluation avoids misjudgment of a single indicator. For example, the annealing furnace is temporarily over-limit but the HIT is normal.

[0088] A storage medium stores instructions. When a computer reads the instructions, the computer is caused to execute the sapphire annealing furnace operation status monitoring and control method described above.

[0089] An electronic device includes a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, the sapphire annealing furnace operation status monitoring and control method described above is implemented.

[0090] Compared with the prior art, the technical effects of the present invention are as follows:

[0091] In view of the output fluctuation problem caused by the aging of the power supply system, the present invention constructs a dynamic compensation algorithm based on a multi-band feature library. By real-time analyzing the nonlinear characteristics of the rectifier and the capacitance attenuation state, and combining with the contact stress - electric field distortion coupling model (compensation accuracy ±0.02V), the power supply output stability is controlled within ±0.05%, effectively suppressing the current and voltage distortion caused by component fatigue, eliminating the electric field interference in the process of lattice stress generation, and ensuring the electric field uniformity in the process of sapphire lattice stress generation. At the same time, in view of the cumulative clock drift caused by the aging of the thermostat, the present invention designs a dynamic compensation algorithm for the thermal field gradient. By real-time analyzing the difference in thermal diffusivity caused by the furnace body deformation through 32-point infrared temperature measurement data, and introducing surface acoustic wave time delay calibration, the clock offset compensation accuracy is improved, and the problem of timing mismatch caused by ignoring the dynamic change of the thermal field in the traditional scheme is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0092] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts. Among them:

[0093] Figure 1 is the sapphire annealing furnace operation status monitoring and control method of the present invention;

[0094] Figure 2Schematic diagram of the process of the dual-channel monitoring mechanism for the first-round evaluation and the second-round evaluation of the present invention. Detailed implementation manners

[0095] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following will describe the detailed implementation manners of the present invention in conjunction with the accompanying drawings of the specification.

[0096] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0097] Secondly, the so-called "one embodiment" or "embodiment" herein refers to specific features, structures, or characteristics that can be included in at least one implementation manner of the present invention. The phrase "in one embodiment" appearing in different places in this specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment that is mutually exclusive with other embodiments.

[0098] Embodiment 1:

[0099] As Figure 1 shown, for the method for monitoring and controlling the operating state of the sapphire annealing furnace according to the embodiment of the present invention, as Figure 1 shown, it includes the following specific steps:

[0100] S1: Collect the power supply ripple data of the annealing furnace, and perform feature matching processing on the power supply ripple data;

[0101] S1 includes the following specific steps:

[0102] S11: Preset the monitoring frequency range, and embed an aluminum nitride insulating layer surface acoustic wave filter at the power supply input end;

[0103] Exemplarily, in this embodiment, the monitoring frequency range is 20 - 500 kHz;

[0104] Preferably, the aluminum nitride insulating layer surface acoustic wave filter can effectively suppress the high-frequency electromagnetic noise generated by the heating rods in the annealing furnace and improve the accuracy of the power supply ripple data;

[0105] S12: Start the annealing furnace and make it enter the normal working state, and obtain the ripple current signal of the operating annealing furnace within the monitoring frequency range through a temperature-resistant current probe;

[0106] S13: Convert the collected ripple current signal into ripple spectrum data, remove the noise in the ripple spectrum data through a filtering algorithm, and at the same time perform normalization processing on the ripple spectrum data after noise processing;

[0107] S14: Divide the ripple spectrum data into multiple unit ripple spectra, capture dynamic feature points in each unit ripple spectrum, and import the dynamic feature points into the waveform similarity index calculation strategy to perform feature matching processing on the power supply ripple data according to the waveform similarity index;

[0108] The dynamic feature points include: the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value at the curvature inflection point of the current unit ripple spectrum;

[0109] Preferably, the waveform similarity index calculation strategy is:

[0110] ;

[0111] where DW is the waveform similarity index;

[0112] are respectively the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value at the curvature inflection point of the current unit ripple spectrum;

[0113] is the average level of the maximum slope values of the rising edges of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the maximum slope values of the rising edges of all unit ripple spectra during the last historical operation of the annealing furnace;

[0114] is the average level of the ripple peak voltages of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the ripple peak voltages of all unit ripple spectra during the last historical operation of the annealing furnace;

[0115] is the average value of the time values at the curvature inflection points of all unit ripple spectra during the last historical operation of the annealing furnace; is the standard deviation of the time values at all the curvature inflection points during the last historical operation of the annealing furnace;

[0116] are respectively the slope weight, the amplitude weight, and the time weight;

[0117] Exemplarily, in this embodiment, ;

[0118] S15: Preset a similarity deviation baseline value , and dynamically update the similarity deviation baseline value through the exponential smoothing method , when the waveform similarity index of the unit ripple spectrum is greater than the similarity deviation baseline value mark the current unit ripple spectrum as having abnormal ripple characteristics.

[0119] Exemplarily, in this embodiment, the smoothing coefficient of the exponential smoothing method is 0.2, and 0.2 is the sapphire thermal relaxation time constant.

[0120] S2: Determine the clock compensation strategy of the distributed thermostat according to the feature matching result, obtain the clock offset compensation value according to the clock compensation strategy, and synchronize the timestamp of the power supply ripple data and the thermostat data through the clock offset compensation value;

[0121] The clock compensation strategy includes: extracting the feature matching result of each unit ripple spectrum, and when the unit ripple spectrum without the abnormal ripple feature mark or the discontinuous unit ripple spectrum with the abnormal ripple feature mark is not detected, execute the first clock compensation strategy;

[0122] The specific content of the first clock compensation strategy is:

[0123] A1: Set up an infrared temperature measurement matrix, read the 32-point infrared temperature measurement data of the annealing furnace, and calculate and obtain the radial temperature gradient according to the 32-point infrared temperature measurement data ;

[0124] A2: Identify the maximum temperature gradient region of the annealing furnace through the temperature gradient identification strategy ;

[0125] Preferably, the specific content of the temperature gradient identification strategy is:

[0126] , where r is the radial coordinate, ;

[0127] A3: Read the temperature field gradient of the annealing furnace every 2 ms, extract the maximum temperature gradient region , and calculate the first offset compensation value of each distributed thermostat clock;

[0128] Preferably, the calculation strategy of the first offset compensation value is: , where, is the first offset compensation value, k is the first proportionality coefficient, , are respectively the actual growth rate and the nominal growth rate of the sapphire crystal;

[0129] It should be noted that thermal stress causes distortion of the sapphire lattice, resulting in frequency offset of the crystal resonator and ultimately causing clock cumulative error;

[0130] A temperature field gradient of every 1 °C causes a frequency offset of 0.02 ppm in the vibration frequency of the sapphire lattice.

[0131] The frequency shift of the sapphire lattice vibration is linearly related to the clock error. Considering the influence of the combined growth rate on the accumulation of thermal stress, a correction term is introduced;

[0132] A4: Perform 500 times of timestamp correction processing per second according to the first offset compensation value. Specifically: ;

[0133] where are the clock timestamps before and after correction by the first offset compensation value respectively; is the sign function.

[0134] It should be noted that the sign function reflects the influence of the thermal gradient direction on the clock drift. The clock speeds up in the heating area and slows down in the cooling area;

[0135] When it is detected that the continuous two-unit ripple spectra are both marked as abnormal ripple characteristics, the second clock compensation strategy is executed.

[0136] The specific content of the second clock compensation strategy is as follows:

[0137] B1: Register all distributed temperature controllers in the system, assign a unique device identifier to each device, and initialize the Lamport logical clock of each device to 0, where i represents the device identifier of the device;

[0138] B2: Periodically collect the temperature data Te of each temperature controller and calculate the derivative of the temperature change rate of each temperature controller;

[0139] B3: Embed the Lamport logical clock value of the current device, the derivative of the temperature change rate, and the device identifier into each communication message;

[0140] B4: The temperature controller device sends the generated message to other related devices at a preset time interval. At the same time, each device receives the messages from other devices and records the reception time;

[0141] B5: When the device with device identifier i receives the message sent by the device with device identifier j, perform the Lamport logical clock update processing. Specifically: , where is the updated logical clock value of the device with device identifier i; is the Lamport logical clock value of the device with device identifier j carried in the message;

[0142] B6: After each device receives the messages sent by all other devices, it performs consistency verification on the derivatives of the temperature change rates of all received messages, specifically including: calculating the average value of the derivatives of the temperature change rates of all received messages , based on the average value calculate the deviation value between the derivative of the temperature change rate of each received message and the average value ;

[0143] B7: Through the least squares method, evaluate and obtain the second proportionality coefficient h based on the deviation values of multiple devices, and calculate the second offset compensation value according to the second proportionality coefficient , where is the second offset compensation value of the device with device identifier i;

[0144] Preferably, the calculation strategy of the second offset compensation value : ;

[0145] Exemplarily, in this embodiment ;

[0146] B8: Calculate the second offset compensation value of each device root , and dynamically update the timestamp of the temperature data of each device, specifically: , where are the timestamps before and after dynamic update according to the second offset compensation value respectively.

[0147] S3: After timestamp synchronization is completed, re-extract the harmonic phase deviation of the annealing furnace power supply ripple data and calculate and obtain the residual clock offset of the distributed temperature controller, establish the first-round monitoring model, and conduct the first-round evaluation of the operating state of the annealing furnace;

[0148] S3 includes the following specific steps:

[0149] S31: After timestamp synchronization is completed, re-extract the average value of the harmonic phase deviation , average harmonic frequency and harmonic current of the power supply ripple data marked with abnormal ripple characteristics of the annealing furnace;

[0150] S32: Calculate and obtain the residual clock offset of the distributed temperature controller , establish the first-round monitoring model, and conduct the first-round evaluation of the operating state of the annealing furnace;

[0151] The first-round monitoring model includes: stress impact assessment layer, shock resistance assessment layer, and first-round control protocol trigger layer;

[0152] Import the harmonic phase shift mean and the residual clock shift into the stress impact assessment layer, and output the assessment result, specifically: ;

[0153] represents the carrier mobility related to the crystal monitoring direction. Preferably, the crystal monitoring direction is the

[0001] direction, describes the migration ability of carriers under the action of an electric field in this direction; is the thermal strain rate; is the conversion coefficient;

[0154] Exemplarily, in this embodiment, , is the thermal conductivity in the direction parallel to sapphire; is the elastic modulus of sapphire; is the density of sapphire; is the specific heat capacity of sapphire;

[0155] It should be noted that the stress impact assessment layer is used to evaluate the thermal diffusion effect caused by the stress change rate;

[0156] Obtain the temperature at the edge of the sapphire crystal and the temperature at the center of the sapphire crystal and import them into the impact resistance assessment layer. The output assessment result is specifically: ; is the failure critical coefficient; is the thermal resistance coefficient of the sapphire crystal; is the thermal conductivity of the sapphire crystal in the vertical direction;

[0157] It should be noted that The physical meaning of is the critical energy density ratio, which characterizes the threshold of the crystal from elastic deformation to dislocation nucleation. Exemplarily, in this embodiment, is obtained from high-temperature uniaxial compression experiments, , applicable to the crystal orientation of the sapphire crystal;

[0158] are the temperature at the edge of the sapphire crystal and the temperature at the center of the sapphire crystal respectively;

[0159] The difference of represents the temperature gradient between the edge and the center of the crystal. It should be noted that the temperature gradient reflects the non-uniformity of the temperature distribution in the crystal growth environment;

[0160] The triggering strategy of the first-round control protocol trigger layer is specifically: when the output result of the stress impact assessment layer is greater than the output result of the impact resistance assessment layer, output that the operating state of the annealing furnace is abnormal and trigger the red emergency rescue protocol for the sapphire lattice;

[0161] When the output result of the stress influence assessment layer is less than or equal to the output result of the impact resistance assessment layer, enter the secondary monitoring model.

[0162] Preferably, the red emergency rescue protocol for the sapphire lattice includes: immediately shutting down the machine and starting an emergency inspection.

[0163] Preferably, the residual clock offset is calculated through the phonon group velocity temperature dependence, specifically: ;

[0164] is the residual clock offset. It should be noted that there is a residual error in the clock synchronization between distributed temperature controllers, that is, a small time offset that still exists after being processed by the clock compensation algorithm;

[0165] is the heater length; is the function of phonon group velocity with respect to temperature, which describes the velocity of the collective motion of phonons in the crystal and is closely related to the lattice vibration and heat conduction of the sapphire crystal; Exemplarily, in this embodiment, ; is the initial velocity of the phonon group, is the Grüneisen parameter, which reflects the anharmonicity of lattice vibration and is related to properties such as thermal expansion and heat conduction of the crystal; G is the shear modulus of sapphire, which describes the ability of sapphire to resist shear deformation and reflects the interaction between atoms inside the crystal; is the Boltzmann constant.

[0166] is the change rate of phonon group velocity with temperature;

[0167] is the temperature change amount, which reflects the change of temperature in the system. Temperature change will cause the change of phonon group velocity, and then cause clock offset;

[0168] It should be noted that reflects the health status of the time synchronization system as an independent parameter; Its abnormal growth will be earlier than the threshold of HIT and can play an early warning role in the first-round assessment; In the multi-parameter monitoring system, provides direct evidence of anomalies in the time dimension, while HIT reflects the comprehensive effect of multi-physical field coupling.

[0169] S4: Reconstruct the substrate contact stress field of the sapphire, establish a secondary monitoring model, and input the substrate contact stress of the sapphire into the secondary monitoring model to conduct a secondary assessment of the operating state of the annealing furnace;

[0170] In S4, the reconstruction of the substrate contact stress field of the sapphire is specifically:

[0171] ;

[0172] is the base contact stress; is the piezoelectric constant; are the vacuum permittivity and the relative permittivity of sapphire respectively; A is the electrode area.

[0173] In S4, the secondary wheel monitoring model includes:

[0174] Calculate and obtain the annealing health index HIT of sapphire, and set the first-level annealing health threshold and the second-level annealing health threshold , where ;

[0175] Compare the annealing health index of sapphire with the first-level annealing health threshold . When the annealing health index of sapphire is greater than or equal to the first-level annealing health threshold , trigger the orange rescue protocol;

[0176] Preferably, the triggering of the orange rescue protocol includes: running the annealing furnace with a limited load and conducting a special inspection on the aging degree of the annealing furnace within 72 hours;

[0177] When the annealing health index of sapphire is less than the first-level annealing health threshold and greater than or equal to the second-level annealing health threshold , trigger the yellow rescue protocol;

[0178] When the annealing health index of sapphire is less than the second-level annealing health threshold , output that the operation status of the annealing furnace is normal.

[0179] Preferably, the calculation strategy of the annealing health index HIT of sapphire is specifically:

[0180] ;

[0181] where is the change rate of the electrode contact stress, indicating how fast the electrode contact stress changes with time and reflecting the dynamic change of the electrode contact state;

[0182] is the second derivative of the phonon group velocity with respect to temperature, reflecting the non-linear characteristic of the phonon group velocity changing with temperature;

[0183] are the start time and end time of the evaluation of the annealing health index respectively.

[0184] The yellow rescue protocol includes: turning on the annular multi-point nozzles evenly arranged around the support frame in the annealing furnace, setting the total gas injection flow rate to 0.15 times the effective volume of the furnace chamber, and at the same time setting the gas flow rate ratio between the top of the support frame and the bottom of the annealing furnace to 3:1 to suppress the concentration gradient caused by the rising of the hot gas flow, and maintaining the outlet pressure of the annular multi-point nozzles within the range of 0.2 - 0.3 MPa to uniformly inject the mixed gas of Ar and hydrogen into the annealing furnace in layers; among them, there are 12 groups of the annular multi-point nozzles, covering the entire axial range of the support frame of the annealing furnace base.

[0185] S5: Dynamically adjust the operating state of the annealing furnace according to the results of the first-round evaluation and the second-round evaluation.

[0186] Embodiment 2:

[0187] In this embodiment, a specific acquisition strategy for obtaining the second proportionality coefficient h according to the deviation values of multiple devices is provided, including:

[0188] B71: Extract the deviation values of multiple devices, and preset ;

[0189] B72: Establish an objective function, specifically: ;

[0190] B73: Take the derivative of the objective function with respect to h and set it to 0, specifically:

[0191] ;

[0192] Solve the above equation to obtain 。

[0193] Embodiment 3:

[0194] This embodiment provides an electronic device, including: a processor and a memory, where the memory stores a computer program that can be called by the processor;

[0195] The processor executes the above-mentioned sapphire annealing furnace operating state monitoring and control method by calling the computer program stored in the memory.

[0196] The electronic device may vary greatly due to different configurations or performances, and can include one or more processors (Central Processing Units, CPU) and one or more memories. Among them, at least one computer program is stored in the memory, and the computer program is loaded and executed by the processor to implement the sapphire annealing furnace operation status monitoring and control method provided by the above method embodiment. The electronic device can also include other components for realizing the functions of the device. For example, the electronic device can also have components such as wired or wireless network interfaces and input / output interfaces for inputting and outputting data. This embodiment will not be elaborated here.

[0197] Embodiment 4:

[0198] This embodiment provides a computer-readable storage medium, on which a rewritable computer program is stored;

[0199] When the computer program runs on a computer device, it enables the computer device to execute the above-mentioned sapphire annealing furnace operation status monitoring and control method.

[0200] For example, the computer-readable storage medium can be a read-only memory (ROM), a random access memory (RAM), a compact disc read-only memory (CD-ROM), magnetic tape, floppy disk, and optical data storage device, etc.

[0201] It should be understood that in various embodiments of the present application, the magnitudes of the serial numbers of the above processes do not mean the order of execution is prior or posterior, and the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

[0202] It should be understood that determining B according to A does not mean determining B only according to A, and B can also be determined according to A and / or other information.

[0203] The above embodiments can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, the processes or functions according to the embodiments of the present invention are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via a wired network or / and a wireless network. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or a data center that contains one or more collections of available media. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a magnetic tape), an optical medium (e.g., a DVD), or a semiconductor medium. The semiconductor medium can be a solid-state drive.

[0204] Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed in the present invention can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in hardware or software depends on the specific application and design constraints of the technical solution. A professional technician can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of the present invention.

[0205] Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, devices, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein.

[0206] In several embodiments provided by the present invention, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only one way, and there can be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings, direct couplings, or communication connections to each other can be through some interfaces. The indirect couplings or communication connections of devices or units can be in electrical, mechanical, or other forms.

[0207] The unit described as a separate component may or may not be physically separated. The component shown as a unit may or may not be a physical unit, that is, it may be located in one place or may be distributed across multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0208] In addition, in each embodiment of the present invention, each functional unit may be integrated in a processing unit, may exist separately as individual physical units, or two or more units may be integrated in one unit.

[0209] In the description of this specification, the description with reference to terms such as "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0210] The above has shown and described the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments, and what is described in the above embodiments and the specification is only to illustrate the principle of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed. The scope of the present invention claimed is defined by the appended claims and their equivalents.

Claims

1. A sapphire annealing furnace operation status monitoring and control method, characterized in that: The method comprises: S1: Collect the power ripple data of the annealing furnace and perform feature matching processing on the power ripple data; S11: preset the monitoring frequency range and embed an aluminum nitride insulating layer surface acoustic wave filter at the power input end; S12: starting the annealing furnace and making it enter a normal working state, and obtaining a ripple current signal of the running annealing furnace within a monitoring frequency range through a temperature-resistant current probe; S13: converting the collected ripple current signal into ripple spectrum data, removing noise in the ripple spectrum data through a filtering algorithm, and normalizing the ripple spectrum data after noise processing; S14: Divide the ripple spectrum data into a plurality of unit ripple spectrums, capture dynamic feature points in each unit ripple spectrum, and import the dynamic feature points into a waveform similarity index calculation strategy, and perform feature matching processing on the power supply ripple data according to the waveform similarity index; The dynamic feature points include: the maximum slope value of the rising edge of the current unit ripple spectrum, the ripple peak voltage of the current unit ripple spectrum, and the time value of the curvature inflection point of the current unit ripple spectrum; S15: Preset similarity deviation baseline value , and dynamically update similar deviations from the baseline value through exponential smoothing , when the waveform similarity index of the unit ripple spectrum is greater than the similarity deviation baseline value When , the current unit ripple spectrum is marked as abnormal ripple characteristics; S2: Determine the clock compensation strategy of the distributed temperature controller according to the feature matching result, obtain the clock offset compensation value according to the clock compensation strategy, and synchronize the power ripple data with the temperature controller data through the clock offset compensation value; S3: After the timestamp synchronization is completed, the harmonic phase deviation of the annealing furnace power supply ripple data is re-extracted and the residual clock offset of the distributed temperature controller is calculated and obtained, the first round of monitoring model is established, and the first round of evaluation of the operating status of the annealing furnace is performed; S31: After the timestamp synchronization is completed, re-extract the harmonic phase deviation mean value of the power ripple data marked as abnormal ripple characteristics in the annealing furnace , harmonic frequency mean and harmonic current ; S32: Calculate and obtain the residual clock offset of the distributed temperature controller , establish the first round of monitoring model and conduct the first round of evaluation on the operating status of the annealing furnace; The first round monitoring model includes: a stress impact assessment layer, an impact resistance assessment layer and a first round control protocol triggering layer; The harmonic phase offset mean and residual clock offset are imported into the stress impact assessment layer, and the assessment results are output, specifically: ; represents the carrier mobility associated with the crystal monitoring direction; is the thermal strain rate; is the conversion factor; The edge temperature and center temperature of the sapphire crystal are obtained and imported into the impact resistance evaluation layer. The output evaluation results are as follows: ; is the failure critical coefficient; is the thermal resistance coefficient of sapphire crystal; is the thermal conductivity of sapphire crystal in the vertical direction; They are the sapphire crystal edge temperature and the sapphire crystal center temperature respectively; The triggering strategy of the first round control protocol triggering layer is specifically as follows: when the output result of the stress impact assessment layer is greater than the output result of the impact resistance assessment layer, the operation state of the output annealing furnace is abnormal, triggering the red emergency rescue protocol of the sapphire lattice; When the output result of the stress impact assessment layer is less than or equal to the output result of the impact resistance assessment layer, the next round of monitoring model is entered; S4: reconstructing the substrate contact stress field of sapphire, establishing a secondary monitoring model, and inputting the substrate contact stress of sapphire into the secondary monitoring model to perform a secondary evaluation on the operating status of the annealing furnace; The reconstruction of the substrate contact stress field of the sapphire is specifically as follows: ； is the substrate contact stress; is the piezoelectric constant; are the vacuum dielectric constant and the sapphire relative dielectric constant respectively; A is the electrode area; The secondary round monitoring model includes: Calculate the annealing health index HIT of sapphire and set the first level annealing health threshold and the second level annealing health threshold ,in, ; The annealing health index of Sapphire is compared with the first-level annealing health threshold When the annealing health index of sapphire is greater than or equal to the first level annealing health threshold, When the orange rescue protocol is triggered; When the sapphire annealing health index is less than the first level annealing health threshold and greater than or equal to the second level annealing health threshold When the yellow rescue protocol is triggered; When the sapphire annealing health index is less than the second level annealing health threshold When , the output annealing furnace operates normally; S5: Dynamically adjust the operating status of the annealing furnace according to the results of the first round of evaluation and the second round of evaluation.

2. The sapphire annealing furnace operation status monitoring and control method according to claim 1, characterized in that: The clock compensation strategy includes: extracting the matching result of each unit ripple spectrum feature, and executing the first clock compensation strategy when no ripple feature abnormality mark is detected or the unit ripple spectrum of the ripple abnormality mark is discontinuous; When two consecutive unit ripple spectra are monitored to be marked as abnormal ripple characteristics, the second clock compensation strategy is executed.

3. The sapphire annealing furnace operation status monitoring and control method according to claim 2, characterized in that: The first clock compensation strategy is specifically: A1: Set up the infrared temperature measurement matrix, read the 32-point infrared temperature measurement data of the annealing furnace, and calculate the radial temperature gradient based on the 32-point infrared temperature measurement data. ; A2: Identify the maximum temperature gradient area of ​​the annealing furnace through the temperature gradient identification strategy ; A3: Read the temperature field gradient of the annealing furnace every 2ms and extract the maximum temperature gradient area , calculating the first offset compensation value of each distributed thermostat clock; A4: Perform timestamp correction processing 500 times per second according to the first offset compensation value, specifically: ; in, are the clock timestamps before and after correction by the first offset compensation value, respectively; is a symbolic function.

4. The sapphire annealing furnace operation status monitoring and control method according to claim 3, characterized in that: The second clock compensation strategy is specifically: B1: Register all distributed thermostats in the system, assign a unique device identifier to each device, and set the Lamport logic clock of each device Initialized to 0, where i represents the device identifier of the device; B2: Periodically collect the temperature data TE of each thermostat and calculate the temperature change rate derivative of each thermostat ; B3: Embed the Lamport logical clock value of the current device in each communication message , temperature change rate derivative and device identifiers; B4: The thermostat device sends the generated message to other related devices at the preset time interval. At the same time, each device receives the message from other devices and records the receiving time; B5: When the device with device identifier i receives a message sent by the device with device identifier j, it performs Lamport logical clock update processing, specifically: ,in, The updated logical clock value of the device with device identifier i; It is the Lamport logical clock value of the device with device identifier j carried in the message; B6: After each device receives messages sent by all devices except itself, it performs consistency verification on the temperature change rate derivatives of all received messages, specifically including: calculating the average value of the temperature change rate derivatives of all received messages , according to the average Calculate the temperature change rate derivative and average value of each received message Deviation value of B7: Obtain the second proportionality coefficient h by evaluating the deviation values ​​of multiple devices through the least squares method, and calculate the second offset compensation value according to the second proportionality coefficient ,in, is a second offset compensation value of the device with device identifier i; B8: Calculate the second offset compensation value for each device root , and dynamically update the timestamp of the temperature data of each device, specifically: ,in, They are respectively the timestamps before and after dynamic updating according to the second offset compensation value.

5. The sapphire annealing furnace operation status monitoring and control method according to claim 4, characterized in that: The yellow rescue protocol includes: opening the annular multi-point nozzles evenly arranged around the support frame in the annealing furnace, setting the total flow rate of the injected gas to 0.15 times the effective volume of the furnace chamber, and setting the gas flow ratio between the top of the support frame and the bottom of the annealing furnace to 3:1, suppressing the concentration gradient caused by the rising hot air flow, maintaining the outlet pressure of the annular multi-point nozzles in the range of 0.2-0.3MPa, and uniformly injecting a mixed gas of Ar and hydrogen into the annealing furnace in layers; wherein, there are 12 groups of annular multi-point nozzles, covering the entire axial range of the annealing furnace base support frame.

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