Finite element and mbvd model combined simulation method of fbars filter

Abstract

The application discloses a kind of finite element and the FBAR filter simulation method of joint MBVD model, comprising: S1, construct resonator three-dimensional finite element model;Wherein, the model upper electrode layer and lower electrode layer are the same electrode layer in shape, and the shape of electrode layer is pentagon;S2, resonator three-dimensional finite element model is simulated, and impedance-frequency characteristic curve is obtained;S3, according to impedance-frequency characteristic curve and filter design target, the thickness of upper electrode layer is adjusted, and target resonator three-dimensional finite element model is obtained;S4, corresponding MBVD model is established, and first S parameter curve is obtained;S5, when first S parameter curve meets design target, establish filter three-dimensional finite element model;If not satisfied, then return S3.The application can accurately reflect the influence of electrode thickness, shape and parasitic vibration on resonant frequency, can effectively suppress parasitic vibration mode, has higher design efficiency, simulation accuracy and flexibility.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of filter design, and particularly relates to a FBAR filter simulation method combining finite element and MBVD models. BACKGROUND

[0002] A film bulk acoustic resonator (FBAR) is a kind of radio frequency component based on the principle of acoustic resonance. It is widely used in radio frequency filters, oscillators and wireless communication fields due to its small size and superior performance. Compared with surface acoustic wave filters, FBAR has higher operating frequency, smaller package size and higher Q value, and is widely used in high-frequency communication fields (such as 5G, Wi-Fi). FBAR generates acoustic wave vibration under the action of an electric field through piezoelectric material (such as aluminum nitride AlN or lithium niobate LiNbO3), and the acoustic wave propagates and reflects in the piezoelectric material film to form a standing wave. The resonant frequency is closely related to the thickness of the film and the acoustic velocity of the material. A typical FBAR structure includes two electrodes and a piezoelectric film sandwiched in the middle. When an external voltage is applied, the piezoelectric material deforms mechanically due to the inverse piezoelectric effect and excites acoustic waves. By designing the thickness of the electrodes and the piezoelectric material, the resonant frequency of the FBAR can be accurately controlled to meet the different frequency band requirements in radio frequency communication.

[0003] Currently, the design of FBAR filter mostly relies on first establishing an equivalent circuit model, and then using circuit simulation software to simulate the filter in series and parallel. However, the equivalent circuit method may ignore some subtle effects in three-dimensional structures, resulting in design errors. Although the finite element method is accurate, the large three-dimensional model will result in long simulation time, and using only the finite element method for design analysis will increase the design cycle of the filter. SUMMARY

[0004] In order to solve the above problems existing in the prior art, the application provides a FBAR filter simulation method combining finite element and MBVD models.

[0005] The technical problem to be solved by the application is solved by the following technical scheme:

[0006] In a first aspect, the application provides a FBAR filter simulation method combining finite element and MBVD models, which comprises:

[0007] S1, a resonator three-dimensional finite element model is constructed; wherein the resonator three-dimensional finite element model comprises an upper electrode layer, a piezoelectric layer, a lower electrode layer, a support layer and a substrate layer arranged in order from top to bottom; the upper electrode layer and the lower electrode layer are electrode layers with the same shape, and the shape of the electrode layer is a pentagon;

[0008] S2, simulate the resonator three-dimensional finite element model to obtain an impedance-frequency characteristic curve of the resonator three-dimensional finite element model;

[0009] S3, adjust the thickness of the upper electrode layer according to the impedance-frequency characteristic curve and filter design target to obtain a target resonator three-dimensional finite element model;

[0010] S4, establish an MBVD model of the target resonator three-dimensional finite element model, and obtain a first S parameter curve according to the MBVD model;

[0011] S5, when the first S parameter curve meets the design target, establish a filter three-dimensional finite element model according to the target resonator three-dimensional finite element model; if not, return to S3 until the first S parameter curve meets the filter design target.

[0012] Optionally, before S1, the method further comprises:

[0013] Constructing a plurality of initial resonator three-dimensional finite element models with square, circular, elliptical and pentagonal electrode layers respectively;

[0014] Simulating the plurality of initial resonator three-dimensional finite element models to obtain a plurality of impedance-frequency characteristic curves corresponding to the plurality of initial resonator three-dimensional finite element models;

[0015] According to the plurality of impedance-frequency characteristic curves, determining that the shapes of the upper electrode layer and the lower electrode layer corresponding to a target impedance-frequency characteristic curve with the smallest parasitic resonance are completely pentagonal, so as to design the shapes of the electrode layers of the resonator three-dimensional finite element model as pentagonal.

[0016] Optionally, the resonator three-dimensional finite element model further comprises a perfect matched layer arranged outside the support layer and the substrate layer.

[0017] Optionally, before S2, the method further comprises:

[0018] The upper electrode layer, the piezoelectric layer, the lower electrode layer, the support layer and the substrate layer in the resonator three-dimensional finite element model are meshed in a free quadrilateral meshing and scanning manner; wherein the piezoelectric layer is divided into 3-5 layers, the perfect matched layer is divided into 5-8 layers, and the upper electrode layer, the lower electrode layer, the support layer and the substrate layer are all divided into 3 layers.

[0019] Optionally, the filter three-dimensional finite element model comprises four identical target resonator three-dimensional finite element models in series and four identical target resonator three-dimensional finite element models in parallel.

[0020] Optionally, after S5, the method further comprises:

[0021] simulating the filter three-dimensional finite element model to obtain a second S parameter curve of the filter three-dimensional finite element model;

[0022] comparing the first S parameter curve and the second S parameter curve to obtain a simulation result of the filter three-dimensional finite element model.

[0023] Optionally, the material of the upper electrode layer and the lower electrode layer is Mo.

[0024] Optionally, the material of the piezoelectric layer is AlN.

[0025] Optionally, the material of the support layer is SiO2.

[0026] Optionally, the material of the substrate layer is Si.

[0027] The technical scheme provided by the embodiment of the application can include the following beneficial effects:

[0028] In the above technical scheme, the FBAR filter is simulated and analyzed, which can more accurately reflect the influence of electrode thickness, shape and parasitic vibration on the resonant frequency, and avoids the simplification error of the equivalent circuit model. The electrode layer in the form of a pentagon effectively suppresses the parasitic vibration mode, reduces small peaks and noise in the frequency response, and thus improves the selectivity of the filter. Moreover, the MBVD model is used for rough simulation first, the three-dimensional model parameters of a single resonator are optimized, and then the three-dimensional finite element model of the filter is established to obtain more accurate simulation results. This simulation method avoids the problem of too long calculation time caused by directly adjusting the model parameters of the filter, significantly improves the design efficiency, and at the same time maintains high precision and optimization flexibility of the simulation.

[0029] The application will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a flowchart of a FBAR filter simulation method combining finite element and MBVD models provided by an embodiment of the application;

[0031] Figure 2 is a structural schematic diagram of a resonator three-dimensional finite element model provided by an embodiment of the application;

[0032] Figure 3 is a schematic diagram of a perfect matched layer provided by an embodiment of the application;

[0033] Figure 4is a schematic diagram of an impedance-frequency characteristic curve of a resonator three-dimensional finite element model provided by an embodiment of the present application.

[0034] Figure 5 is a schematic diagram of a resonator three-dimensional finite element model after meshing provided by an embodiment of the present application.

[0035] Figure 6 is a schematic diagram of an MBVD model of a resonator three-dimensional finite element model provided by an embodiment of the present application.

[0036] Figure 7 is a schematic diagram of a simulated impedance-frequency characteristic curve provided by an embodiment of the present application.

[0037] Figure 8 is a structural schematic diagram of a filter three-dimensional finite element model provided by an embodiment of the present application.

[0038] Figure 9 is a schematic diagram of a filter topology provided by an embodiment of the present application.

[0039] Figure 10 is a comparative schematic diagram of an S parameter curve provided by an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to facilitate understanding of the present application scheme, first, the related circumstances of the prior art and the inventive concept of the present application are briefly described.

[0041] Most of the existing FBAR filter designs rely on the equivalent circuit model of the resonator, such as the Modified Butterworth-Van Dyke (MBVD) model and the Mason model. However, the equivalent circuit model is a simplification of the three-dimensional physical structure, and cannot accurately reflect the influence of electrode thickness, shape and parasitic vibration modes on the actual frequency response. This simplification leads to the neglect of some important details in the design, which cannot truly simulate its performance, and cannot optimize for parasitic resonance. In traditional design, due to unreasonable electrode geometric shape design, parasitic vibration modes (such as Lamb waves) are easily generated, which will cause small peaks or noise in the frequency response, thereby affecting the selectivity of the filter and the signal quality.

[0042] Therefore, the present application proposes a finite element and MBVD model combined FBAR filter simulation method to solve the technical problem.

[0043] Figure 1 is a flowchart of a finite element and MBVD model combined FBAR filter simulation method provided by an embodiment of the present application, as shown in the figure, the method comprises the following steps: Figure 1 ​

[0044] S1, a resonator three-dimensional finite element model is constructed; wherein the resonator three-dimensional finite element model comprises an upper electrode layer, a piezoelectric layer, a lower electrode layer, a support layer and a substrate layer arranged in sequence from top to bottom; the upper electrode layer and the lower electrode layer are electrode layers with the same shape, and the shape of the electrode layer is a pentagon.

[0045] It can be understood that the resonator three-dimensional finite element model is constructed by COMSOL, and the thickness of each layer is determined according to the actual performance requirement. With the increase of the thickness, the resonant frequency gradually decreases. The thickness of the substrate layer can be 5um, the support layer can be 0.33um, the lower electrode layer can be 0.2um, the piezoelectric layer can be 0.5um, and the thickness of the upper electrode layer can be adjusted.

[0046] In an embodiment, Figure 2 is a structural schematic diagram of a resonator three-dimensional finite element model provided by an embodiment of the present application, Figure 2 The resonator three-dimensional finite element model shown can include an upper electrode layer 1, a piezoelectric layer 2, a lower electrode layer 3, a support layer 4, an air cavity 5 and a substrate layer 6 arranged in sequence from top to bottom. The air cavity 5 is a hollow area located between the support layer 4 and the substrate layer 6.

[0047] Optionally, before S1, the method can further comprise:

[0048] Constructing a plurality of initial resonator three-dimensional finite element models with the electrode layer being a square, a circle, an ellipse and a pentagon respectively;

[0049] Simulating the plurality of initial resonator three-dimensional finite element models to obtain a plurality of impedance-frequency characteristic curves corresponding to the plurality of initial resonator three-dimensional finite element models;

[0050] According to the plurality of impedance-frequency characteristic curves, the shapes of the upper electrode layer and the lower electrode layer corresponding to the target impedance-frequency characteristic curve with the smallest parasitic resonance are determined to be completely the same pentagons, so as to design the shape of the electrode layer of the resonator three-dimensional finite element model as a pentagon.

[0051] It can be understood that the electrode layer can be designed in different shapes to obtain the optimal shape capable of suppressing parasitic resonance. In the present application, the shape of the electrode layer is set to be a square, a circle, an ellipse and a pentagon respectively, and further, the electrode layer can be designed in other shapes, such as a triangle and a rhombus, which are not limited in the present application.

[0052] Optionally, the material of the upper electrode layer and the lower electrode layer is Mo; the material of the piezoelectric layer is AlN; the material of the support layer is SiO2; and the material of the substrate layer is Si.

[0053] Optionally, Figure 3is a schematic diagram of a perfect matched layer provided by an embodiment of the present application, as shown in Figure 3 The resonator three-dimensional finite element model further includes a perfect matched layer arranged outside the support layer and the substrate layer, as shown in Figure 3 The perfect matched layer is a blue area distributed around the outside of the support layer and the substrate layer.

[0054] S2, simulate the resonator three-dimensional finite element model to obtain an impedance-frequency characteristic curve of the resonator three-dimensional finite element model.

[0055] It can be understood that Figure 4 is a schematic diagram of an impedance-frequency characteristic curve of a resonator three-dimensional finite element model provided by an embodiment of the present application, as shown in Figure 4 The figure shows an impedance-frequency characteristic curve of a resonator three-dimensional finite element model with a pentagonal electrode layer.

[0056] Optionally, before S2, the method can further include: performing mesh division on the upper electrode layer, the piezoelectric layer, the lower electrode layer, the support layer and the substrate layer in the resonator three-dimensional finite element model in a free quadrilateral mesh and sweep manner; wherein the number of division layers of the piezoelectric layer is 3-5 layers, the number of division layers of the perfect matched layer is 5-8 layers, and the number of division layers of the upper electrode layer, the lower electrode layer, the support layer and the substrate layer is all 3 layers.

[0057] It can be understood that Figure 5 is a schematic diagram of a mesh-divided resonator three-dimensional finite element model provided by an embodiment of the present application, as shown in Figure 5 Mesh division is performed on the resonator three-dimensional finite element model. Too fine mesh will cause too large resource occupation and slow simulation speed; too rough mesh will cause large deviation of the simulation result from the actual value, so different mesh division should be performed on different parts of the resonator three-dimensional finite element model, and the mesh division is performed in a free quadrilateral mesh and sweep manner.

[0058] It is worth mentioning that before simulation is performed on a plurality of initial resonator three-dimensional finite element models with square, circular, elliptical and pentagonal electrode layers, mesh division is also performed on the initial resonator three-dimensional finite element models.

[0059] S3, adjust the thickness of the upper electrode layer according to the impedance-frequency characteristic curve and the design target of the filter to obtain a target resonator three-dimensional finite element model.

[0060] It can be understood that the thickness of the upper electrode of the resonator is adjusted according to the impedance-frequency characteristic curve and the design target of the required designed filter, so that the impedance-frequency characteristic curve meets the requirement and the parallel resonance frequency of the parallel resonator is equal to the series resonance frequency of the series resonator.

[0061] S4, an MBVD model of the target resonator three-dimensional finite element model is established, and a first S parameter curve is obtained according to the MBVD model.

[0062] It can be understood that, Figure 6 is a schematic diagram of an MBVD model of a resonator three-dimensional finite element model provided by an embodiment of the present application, and the circuit includes a resistor Rs, a resistor Rm, a resistor R0, a capacitor Cm, a capacitor C0 and an inductor Lm, Figure 7 is a schematic diagram of a simulated impedance-frequency characteristic curve, as shown in Figure 7 The point curve is a characteristic curve of the resonator three-dimensional finite element model simulated by the MBVD model, and the blue curve is a characteristic curve of the resonator three-dimensional finite element model.

[0063] S5, when the first S parameter curve meets the design target, a filter three-dimensional finite element model is established according to the target resonator three-dimensional finite element model; if not, return to S3 until the first S parameter curve meets the filter design target.

[0064] It can be understood that whether the first S parameter curve meets the design target is observed, if the design target is met, the filter three-dimensional finite element model is established, and if the design target is not met, the upper electrode layer thickness is returned to S3 for continuous adjustment until the first S parameter curve meets the filter design target.

[0065] Optionally, after S5, the method can further include:

[0066] The filter three-dimensional finite element model is simulated to obtain a second S parameter curve of the filter three-dimensional finite element model;

[0067] The first S parameter curve and the second S parameter curve are compared to obtain a simulation result of the filter three-dimensional finite element model.

[0068] It can be understood that according to the thickness and shape data of the resonator three-dimensional finite element model obtained by the previous simulation, the filter three-dimensional finite element model is established, Figure 8 is a structural schematic diagram of a filter three-dimensional finite element model provided by an embodiment of the present application, as shown in Figure 8 The filter three-dimensional finite element model is obtained by connecting a plurality of target resonator three-dimensional finite element models, wherein the target resonator three-dimensional finite element models S1, S2, S3 and S4 are in series, and the target resonator three-dimensional finite element models P1, P2, P3 and P4 are in parallel.

[0069] Optionally, it can be understood that, Figure 9is a schematic diagram of a filter topology provided by an embodiment of the present application, and the filter three-dimensional finite element model comprises four identical target resonator three-dimensional finite element models connected in series and four identical target resonator three-dimensional finite element models connected in parallel.

[0070] It can be understood that, with reference to Figure 9 , the connection mode shown in Figure 9 is used to establish the MBVD model of the filter in ADS, and a first S parameter curve corresponding to the filter three-dimensional finite element model is obtained through simulation. Figure 8 The upper electrode layer of the target resonator three-dimensional finite element model S1 in is added with a terminal and set to 1W power, indicating an input end; the upper electrode layer of the target resonator three-dimensional finite element model S4 and the target resonator three-dimensional finite element model P4 is added with a terminal and set to 0W power, indicating an output end; the upper electrode layer of the target resonator three-dimensional finite element model P1 and the target resonator three-dimensional finite element model P3 and the lower electrode layer of the target resonator three-dimensional finite element model P2 and the target resonator three-dimensional finite element model P4 are set to ground, and the lower electrode layer of the target resonator three-dimensional finite element model S1, the target resonator three-dimensional finite element model S2 and the target resonator three-dimensional finite element model P1, the upper electrode layer of the target resonator three-dimensional finite element model S2, the target resonator three-dimensional finite element model S3 and the target resonator three-dimensional finite element model P2, and the lower electrode layer of the target resonator three-dimensional finite element model S3, the target resonator three-dimensional finite element model S4 and the target resonator three-dimensional finite element model P3 are respectively set to three groups of floating potentials, indicating mutual connection, and mesh division is performed.

[0071] In addition, Figure 10 is a comparative schematic diagram of an S parameter curve provided by an embodiment of the present application, as shown in Figure 10 , the first S parameter curve (ADS) obtained according to the MBVD model and the second S parameter curve (COMSOL) obtained according to the filter three-dimensional finite element model are shown, indicating the accuracy of the simulation result of the filter three-dimensional finite element model of the present application.

[0072] Compared with the method of extracting the equivalent circuit first and then performing circuit simulation, the application can consider the parasitic resonance in the FBAR resonator, and has higher simulation accuracy. The simplification error of the traditional equivalent circuit model is avoided, and the influence of the electrode shape, thickness and material characteristics on the performance of the FBAR filter can be more accurately captured; the three-dimensional finite element modeling method of the application makes the performance optimization of the filter more convenient, and by adjusting the shape, structure and other parameters of the electrode of the resonator in COMSOL, the influence of these changes on the parasitic resonance and frequency response can be intuitively observed, so that various electrode shapes and structure schemes can be quickly evaluated, and the structure with the best parasitic resonance suppression effect is selected to optimize the performance of the filter; by optimizing the thickness of the upper electrode layer, the resonance frequency of the FBAR can be flexibly adjusted to achieve the required target, and this flexibility enables the FBAR filter to better adapt to the application requirements of different frequency bands, and enhances the applicability of the design; by adjusting the three-dimensional finite element model of a single resonator and fitting it into an MBVD circuit model for performance adjustment, the problem of high computational complexity and long time caused by directly adjusting the entire filter three-dimensional model is avoided, thereby significantly improving the simulation efficiency.

[0073] It should be noted that the terms "first", "second", and the like, are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the application described herein can be implemented in an order other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of devices and methods consistent with some aspects of the present application.

[0074] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means that the specific features or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present specification.

[0075] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art can understand and implement other variations of the disclosed embodiments by viewing the drawings and the disclosed content. In the description of the present invention, the word "comprising" does not exclude other components or steps, "one" or "a" does not exclude multiple situations, and "multiple" means two or more, unless otherwise clearly and specifically defined. In addition, certain measures are recorded in different embodiments, but this does not mean that these measures cannot be combined to produce good results.

[0076] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0077] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0078] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0079] The above is further detailed description of the present application in combination with specific preferred embodiments, and cannot be deemed as limitation of the specific implementation of the present application to these descriptions. For those skilled in the art to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, and all should be deemed as falling within the protection scope of the present application.

Claims

1. A method for FBAR filter simulation combining finite element and MBVD models, characterized in that, The method comprises: S1, constructing a resonator three-dimensional finite element model; wherein the resonator three-dimensional finite element model comprises an upper electrode layer, a piezoelectric layer, a lower electrode layer, a support layer and a substrate layer arranged in sequence from top to bottom; the upper electrode layer and the lower electrode layer are electrode layers with the same shape, and the shape of the electrode layer is a pentagon; S2, simulating the resonator three-dimensional finite element model to obtain the impedance-frequency characteristic curve of the resonator three-dimensional finite element model; S3, adjusting the thickness of the upper electrode layer according to the impedance-frequency characteristic curve and the filter design target to obtain a target resonator three-dimensional finite element model; S4, establishing an MBVD model of the target resonator three-dimensional finite element model, and obtaining a first S parameter curve according to the MBVD model; S5, when the first S parameter curve meets the design target, establishing a filter three-dimensional finite element model according to the target resonator three-dimensional finite element model; if not, returning to S3 until the first S parameter curve meets the filter design target.

2. The FBAR filter simulation method of claim 1, wherein, Before S1, the method further comprises: constructing a plurality of initial resonator three-dimensional finite element models with square, circular, elliptical and pentagonal electrode layers respectively; simulating the plurality of initial resonator three-dimensional finite element models to obtain a plurality of impedance-frequency characteristic curves corresponding to the plurality of initial resonator three-dimensional finite element models; According to the plurality of impedance-frequency characteristic curves, the shapes of the upper electrode layer and the lower electrode layer corresponding to the target impedance-frequency characteristic curve with the smallest parasitic resonance are determined to be completely the same pentagons, so as to design the shape of the electrode layer of the resonator three-dimensional finite element model as a pentagon.

3. The FBAR filter simulation method of claim 1, wherein, The resonator three-dimensional finite element model further comprises a perfect matched layer arranged outside the support layer and the substrate layer.

4. The FBAR filter simulation method of claim 3, wherein, Before S2, the method further comprises: adopting a free quadrilateral mesh and a sweep method to divide the upper electrode layer, the piezoelectric layer, the lower electrode layer, the support layer and the substrate layer in the resonator three-dimensional finite element model into meshes; wherein the number of layers of the piezoelectric layer is 3-5 layers, the number of layers of the perfect matched layer is 5-8 layers, and the number of layers of the upper electrode layer, the lower electrode layer, the support layer and the substrate layer is 3 layers.

5. The FBAR filter simulation method of claim 1 in combination with a finite element and MBVD model, wherein, The filter three-dimensional finite element model comprises four target resonator three-dimensional finite element models in series and four target resonator three-dimensional finite element models in parallel.

6. The method of claim 1, wherein the FBAR filter simulation method is combined with a finite element and MBVD model. After S5, the method further comprises: simulating the filter three-dimensional finite element model to obtain a second S parameter curve of the filter three-dimensional finite element model; comparing the first S parameter curve and the second S parameter curve to obtain a simulation result of the filter three-dimensional finite element model.

7. The FBAR filter simulation method of claim 1 in combination with a finite element and MBVD model, wherein, The materials of the upper electrode layer and the lower electrode layer are Mo.

8. The FBAR filter simulation method of claim 1 in combination with a finite element and MBVD model, wherein, The material of the piezoelectric layer is AlN.

9. The FBAR filter simulation method of claim 1 in combination with a finite element and MBVD model, wherein, The material of the support layer is SiO2.

10. The FBAR filter simulation method of claim 1 in combination with a finite element and MBVD model, wherein, The material of the substrate layer is Si.

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