A method, device, apparatus, and medium for manufacturing a precision thin film capacitor

Abstract

The application discloses a kind of precision thin film capacitor manufacturing processing method, device, equipment and medium, comprising: based on plasma discharge, the evaporation surface of base film is plasma treated;Determine the width of metallized film and the number of metal string, and the corresponding edge plating layer width deviation and the corresponding middle plating layer width deviation under the width of metallized film and the number of metal string are carried out evaporation, and the metallized film of covering metal layer is obtained;According to the preset cutting mode, the metallized film is cut, wherein the preset cutting mode includes straight cutting, single-side wave cutting and double-side wave cutting;According to preset step, the metallized film is treated, and the precision thin film capacitor is obtained, wherein the preset step includes: winding, hot pressing, spraying gold, welding and packaging.The application belongs to the field of capacitor manufacturing.Capacitors manufactured based on the method provided by the application can have good high-temperature resistance and low noise advantages.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of capacitor manufacturing, in particular to a precision thin film capacitor manufacturing processing method, device, equipment and medium. BACKGROUND

[0002] Thin film capacitors are mainly used in electronic, household appliances, communication, power, electrified railway, hybrid electric vehicle, wind power generation, solar power generation and other industries. The stable development of these industries has promoted the growth of the thin film capacitor market. With the development of technology, the update cycle of electronic, household appliances, communication and other industries is becoming shorter and shorter, and thin film capacitors have become an indispensable electronic component for promoting the update of the above industries due to their good electrical performance and high reliability.

[0003] However, during the application of thin film capacitors, problems such as large capacitor noise, capacitor heating and bulging open circuit failure may occur, which challenge the life and reliability of the capacitor. Therefore, how to manufacture a capacitor with small noise and good temperature resistance is a problem to be solved. SUMMARY

[0004] The present application provides a precision thin film capacitor manufacturing processing method, device, equipment and medium, which solves the technical problems of large capacitor noise and poor temperature resistance in the prior art, and achieves the technical effect of manufacturing a capacitor with small noise and good temperature resistance.

[0005] In a first aspect, the present application provides a precision thin film capacitor manufacturing processing method, which comprises:

[0006] Based on plasma discharge, the evaporation surface of the base film is subjected to plasma treatment to obtain a metallized film;

[0007] The width of the metallized film and the number of metal strings are determined, and the corresponding edge plating layer width deviation and the corresponding middle plating layer width deviation under the width of the metallized film and the number of metal strings are determined, and evaporation is performed to obtain a metallized film covered with a metal layer;

[0008] The metallized film is cut according to a preset cutting mode, wherein the preset cutting mode includes straight cutting, single-edge wavy cutting and double-edge wavy cutting;

[0009] The metallized film is treated according to a preset step to obtain a precision thin film capacitor, wherein the preset step includes winding, hot pressing, gold spraying, welding and packaging.

[0010] Further, determining the width of the metallized film and the number of metal strings, and the corresponding edge plating layer width deviation and the corresponding middle plating layer width deviation under the width of the metallized film and the number of metal strings comprises:

[0011] When the width of the metallized film is ≤14.5mm and the number of metal strings is an odd number, the side coating width deviation and the middle coating width deviation are both ±0.15mm;

[0012] When the width of the metallized film is ≤14.5mm and the number of metal strings is an even number, the side coating width deviation is ±0.30mm, and the middle coating width deviation is ±0.15mm;

[0013] When the width of the metallized film is greater than 14.5mm and less than or equal to 38mm, and the number of metal strings is an odd number, the side coating width deviation and the middle coating width deviation are both ±0.20mm;

[0014] When the width of the metallized film is greater than 14.5mm and less than or equal to 38mm, and the number of metal strings is an even number, the side coating width deviation is ±0.40mm, and the middle coating width deviation is ±0.20mm;

[0015] When the width of the metallized film is greater than 38mm and the number of metal strings is an odd number, the side coating width deviation is ±0.30mm, and the middle coating width deviation is ±0.20mm;

[0016] When the width of the metallized film is greater than 38 mm and the number of metal strings is an even number, the side coating width deviation is ±0.60 mm and the middle coating width deviation is ±0.20 mm.

[0017] Furthermore, the metallized film is cut according to a preset cutting method, including:

[0018] The metallized film is cut according to the shape requirements and size deviations of each preset cutting method.

[0019] Furthermore, in the winding step, the process includes:

[0020] When the preset cutting mode is straight cutting and the pitch of the winding core is ≤27.5mm, the misalignment range of the winding core is controlled within 0.5mm±0.2mm;

[0021] When the preset cutting mode is wave cutting and the pitch of the winding core is ≤27.5mm, the misalignment range of the winding core is controlled within 0.55mm±0.2mm;

[0022] When the preset cutting mode is straight cutting and the pitch of the winding core is greater than 27.5mm, the misalignment range of the winding core is controlled within 0.5mm±0.2mm;

[0023] When the preset cutting mode is wave cutting and the pitch of the winding core is greater than 27.5 mm, the misalignment range of the winding core is controlled within 0.65 mm ± 0.2 mm.

[0024] Further, in the hot-pressing step, comprising:

[0025] The hot-pressing temperature is within 125℃±5℃;

[0026] The hot-pressing time is within 360s±30s;

[0027] The type of the hot-pressing machine is a large hot-pressing machine, wherein the number of the core is 1247, and the pressure provided by the large hot-pressing machine is 6.3MPa±0.1MPa.

[0028] Further, in the gold spraying step, comprising:

[0029] The tin content in the alloy used is >60%.

[0030] Further, in the welding step, comprising:

[0031] The welding power source uses a digital inverter power source, and a non-resistance cylinder is used to provide pressure.

[0032] In a second aspect, the present application provides a precise thin film capacitor manufacturing and processing device, the device comprising:

[0033] The discharge processing module is used for plasma processing the evaporation surface of the base film based on plasma discharge to obtain a metallized film;

[0034] The evaporation module is used for determining the width of the metallized film and the number of metal strings, and the corresponding edge coating layer width deviation and the corresponding middle coating layer width deviation under the width of the metallized film and the number of metal strings, and performing evaporation to obtain a metallized film covered with a metal layer;

[0035] The cutting module is used for cutting the metallized film according to a preset cutting mode, wherein the preset cutting mode includes straight cutting, single-edge wavy cutting, and double-edge wavy cutting;

[0036] The container acquisition module is used for processing the metallized film according to a preset step to obtain a precise thin film capacitor, wherein the preset step includes winding, hot-pressing, gold spraying, welding, and packaging.

[0037] In a third aspect, the present application provides an electronic device, comprising:

[0038] A processor;

[0039] A memory for storing processor-executable instructions;

[0040] The processor is configured to execute to implement the precise thin film capacitor manufacturing and processing method provided in the first aspect.

[0041] In a fourth aspect, the present invention provides a non-temporary computer-readable storage medium, which, when the instructions in the storage medium are executed by a processor of an electronic device, enables the electronic device to execute a precision thin film capacitor manufacturing method as provided in the first aspect.

[0042] One or more technical solutions provided in the present invention have at least the following technical effects or advantages:

[0043] The present invention provides a method for manufacturing and processing a precision film capacitor, comprising: performing plasma treatment on the vapor-deposited surface of a base film based on plasma discharge to obtain a metallized film; determining the width of the metallized film and the number of metal strings, as well as the side plating width deviation and the corresponding middle plating width deviation corresponding to the width of the metallized film and the number of metal strings, and performing vapor deposition to obtain a metallized film covering a metal layer; cutting the metallized film according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wavy cutting, and double-side wavy cutting; processing the metallized film according to preset steps to obtain a precision film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding, and packaging. The capacitor produced based on the method provided by the present invention can have good temperature resistance and low noise. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0045] Figure 1 A schematic diagram of a process for manufacturing a precision film capacitor provided by the present invention;

[0046] Figure 2 A schematic structural diagram of the metallized film provided by the present invention;

[0047] Figure 3 A schematic diagram of a cutting method for a metallized film provided by the present invention;

[0048] Figure 4 A schematic flow chart of another method for manufacturing and processing precision film capacitors provided by the present invention. DETAILED DESCRIPTION

[0049] The embodiment of the present invention solves the technical problems of high capacitor noise and poor temperature resistance in the prior art by providing a method for manufacturing a precision thin film capacitor.

[0050] The technical solution of the present invention is to solve the above technical problems, and the overall idea is as follows:

[0051] A method for manufacturing and processing a precision film capacitor comprises: based on plasma discharge, performing plasma treatment on the vapor-deposited surface of a base film to obtain a metallized film; determining the width of the metallized film and the number of metal strings, as well as the side plating width deviation and the corresponding middle plating width deviation under the width of the metallized film and the number of metal strings, and performing vapor deposition to obtain a metallized film covering a metal layer; cutting the metallized film according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wavy cutting, and double-side wavy cutting; processing the metallized film according to preset steps to obtain a precision film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding, and packaging.

[0052] In order to better understand the above technical solution, the above technical solution will be described in detail below with reference to the accompanying drawings and specific implementation methods.

[0053] First, the term "and / or" as used herein simply describes a relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A alone, A and B together, or B alone. Furthermore, the character " / " in this document generally indicates an "or" relationship between the associated objects.

[0054] The present invention provides Figure 1 A method for manufacturing a precision thin film capacitor is shown, the method comprising steps S11-S14:

[0055] In step S11 , the vapor deposition surface of the base film is subjected to plasma treatment based on plasma discharge to obtain a metallized film.

[0056] Plasma discharge is a low-pressure gas discharge phenomenon. Under appropriate voltage and pressure conditions, the gas molecules between the electrodes are ionized into free electrons and positive ions, forming a conductive plasma accompanied by a visible luminescence phenomenon (i.e., "glow"). Plasma discharge can produce a stable plasma environment suitable for various surface treatment applications.

[0057] The metallized film can use the Genesis general base film which is resistant to high temperature of 125 degrees Celsius. The Genesis general base film can maintain its physical and chemical properties in a temperature environment up to 125 degrees Celsius without significant deformation, softening, decomposition or other deterioration.

[0058] Based on plasma discharge, plasma treatment is performed on the vapor deposition surface of the base film, which can neutralize the static electricity on the surface of the film, increase the surface flatness of the film, and activate the surface of the film, thereby improving the adhesion of the deposited coating and the vapor deposition quality.

[0059] Regarding step S12, the width of the metallized film and the number of metal strings, as well as the corresponding side coating width deviation and the corresponding middle coating width deviation under the width of the metallized film and the number of metal strings are determined, and evaporation is performed to obtain a metallized film covering the metal layer.

[0060] Evaporation is a physical vapor deposition technique that converts a metal material from a solid or liquid state into a gaseous state. The gaseous atoms or molecules are then deposited on the surface of a base film to form a metallized film. The evaporation process is typically performed in a vacuum environment to ensure deposition quality and minimize the impact of background gases.

[0061] Determine the width of the metallized film and the number of metal strings, as well as the corresponding side coating width deviation and the corresponding middle coating width deviation under the width of the metallized film and the number of metal strings, including: when the width of the metallized film is ≤14.5mm and the number of metal strings is an odd number, the side coating width deviation and the middle coating width deviation are both ±0.15mm; when the width of the metallized film is ≤14.5mm and the number of metal strings is an even number, the side coating width deviation is ±0.30mm and the middle coating width deviation is ±0.15mm; when the width of the metallized film is greater than 14.5mm and ≤38mm, and the number of metal strings is an odd number, the side coating width deviation and the middle coating width deviation are ±0. The width deviation is ±0.20mm; when the width of the metallized film is greater than 14.5mm and ≤38mm, when the number of metal strings is an even number, the side coating width deviation is ±0.40mm, and the middle coating width deviation is ±0.20mm; when the width of the metallized film is greater than 38mm, and the number of metal strings is an odd number, the side coating width deviation is ±0.30mm, and the middle coating width deviation is ±0.20mm; when the width of the metallized film is greater than 38mm, and the number of metal strings is an even number, the side coating width deviation is ±0.60mm, and the middle coating width deviation is ±0.20mm. For details, please refer to Table 1, and the structural diagram of the metallized film can also be referred to Figure 2 , Figure 2 (a) The number of metal strings in the metallized film is an odd number, Figure 2 (b) The number of metal strings in the metallized film is an even number, where b is the width of the metallized film, c is the margin, and d is the thickness of the metallized film.

[0062] Table 1

[0063]

[0064]

[0065] Regarding step S13, the metallized film is cut according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wavy cutting, and double-side wavy cutting.

[0066] Specifically, the metallized film is cut according to the shape requirements and size deviations of each preset cutting method. For details, please refer to Table 2:

[0067] Table 2

[0068]

[0069]

[0070] For straight cutting, single-side wavy cutting and double-side wavy cutting, please refer to Figure 3 ,in, Figure 3 (a) is a straight cut, Figure 3 (b) is a single-side wave cutting, Figure 3 (c) is a double-sided wave cutting, Figure 3 (d) is a straight cut edge with a thickened area, where L is the width of the thickened area (L includes the thickened area L1 and the transition area L2), B is the film width, B is the total film width, B = b + Wa, c is the margin, W is the wavelength, Wa is the amplitude, and δ is the thickness of the metallized film.

[0071] Regarding step S14, the metallized film is processed according to preset steps to obtain a precision thin film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding and packaging.

[0072] The present invention further provides Table 3 for determining whether thickening exists, including:

[0073] Table 3

[0074]

[0075]

[0076] In the winding step, it includes: when the preset cutting mode is straight cutting and the pitch of the winding core is ≤27.5mm, the misalignment range of the winding core is controlled within 0.5mm±0.2mm; when the preset cutting mode is wavy cutting and the pitch of the winding core is ≤27.5mm, the misalignment range of the winding core is controlled within 0.55mm±0.2mm; when the preset cutting mode is straight cutting and the pitch of the winding core is greater than 27.5mm, the misalignment range of the winding core is controlled within 0.5mm±0.2mm; when the preset cutting mode is wavy cutting and the pitch of the winding core is greater than 27.5mm, the misalignment range of the winding core is controlled within 0.65mm±0.2mm.

[0077] During the winding step, the position and pressure distribution of each layer of film can be precisely controlled by slowing down the winding speed, thereby improving the bonding tightness between layers; by increasing the winding tension, the tension in the winding process can be increased to make the metallized film more compact and flat during the winding process; by applying appropriate pressure from the film pressing wheel, additional pressure can be applied to each layer of film while winding, further promoting close bonding between layers; ensure that all mechanical components involved in the winding process, such as guide wheels and guide rails, can rotate freely and will not cause damage to the metallized film due to jamming or other mechanical problems; check whether the edge of the core has deviations beyond the allowable range to ensure that the shape of the core after winding is regular and there is no obvious deformation.

[0078] In the hot pressing step, the hot pressing temperature is within 125°C ± 5°C; the hot pressing time is within 360s ± 30s; the type of hot press is a large hot press, wherein the number of cores is 1247, and the pressure provided by the large hot press is 6.3MPa ± 0.1MPa.

[0079] During the hot pressing step, the core is evenly stressed to prevent product defects caused by local over- or under-pressing. The ideal hot pressing temperature is to soften the material to facilitate shaping, but not so high as to cause material decomposition or performance changes.

[0080] Appropriate pressure is applied to ensure the material flows adequately in the heated state and fills the mold cavity, resulting in a smooth surface finish and dimensional accuracy. The proper hot pressing time is determined to ensure sufficient time for the material to complete its phase transition and for stress to be released. The number of core layers is controlled to meet application requirements, such as the capacitance of a capacitor.

[0081] In the gold spraying step, the tin content of the alloy used is greater than 60%, as shown in Table 4, including:

[0082] Table 4

[0083] Model Sn (percent) Zn (percent) Sb (percent) Cu (percent) SCSC-1 79-81 Balance 1-1.5 0.3-0.5 SCSC-2A 69-71 Balance 1-1.5 0.3-0.5 SCSC-2B 69-71 Balance 0.7-1.3 0.03-0.1 SCSC-3 63-65 Balance 0.7-1.3 0.03-0.1

[0084] Table 5 shows the remaining parameters of the above models.

[0085] Table 5

[0086]

[0087] The welding process includes: using a digital inverter power supply and a non-blocking cylinder to provide pressure. This replaces the traditional TC-10A power supply and uses a non-blocking cylinder to replace the spring pressure. This prevents excessive welding weight or poor welds caused by unstable springs, and refines welding parameters to ensure product quality.

[0088] In addition, potting materials can be used instead of impregnation materials, and PPS shells can be used instead of powder epoxy encapsulation to enhance the moisture resistance and corrosion resistance of the capacitor, and the temperature resistance is also doubled. Figure 4 The time from unpacking the materials to winding and inspection shall not exceed 28 hours; the time from unpacking the materials to deburring and inspection shall not exceed 50 hours (the time from leaving the masking process to entering the gold spraying process shall not exceed 15 minutes, and the time from leaving the masking process to deburring and inspection shall not exceed 12 hours).

[0089] The time from the completion of deburring inspection to the completion of impregnation or infusion curing shall not exceed 42 hours (the time from the completion of the first infusion curing to the completion of the second infusion curing shall not exceed 30 hours, and the time from the completion of infusion to the start of curing shall not exceed 3 hours). The total time limit for the total assessment shall not exceed 96 hours.

[0090] In summary, the present invention provides a method for manufacturing and processing a precision film capacitor, comprising: performing plasma treatment on the vapor-deposited surface of the base film based on plasma discharge; determining the width of the metallized film and the number of metal strings, as well as the side plating width deviation and the corresponding middle plating width deviation under the width of the metallized film and the number of metal strings, and performing vapor deposition to obtain a metallized film covering the metal layer; cutting the metallized film according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wave cutting and double-side wave cutting; processing the metallized film according to preset steps to obtain a precision film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding and packaging. The capacitor produced by the method provided by the present invention can have good temperature resistance and low noise.

[0091] Based on the same inventive concept, the present invention provides a precision film capacitor manufacturing and processing device, the device comprising:

[0092] A discharge processing module, used for performing plasma treatment on the vapor deposition surface of the base film based on plasma discharge to obtain a metallized film;

[0093] The evaporation module is used to determine the width of the metallized film and the number of metal strings, as well as the corresponding side coating width deviation and middle coating width deviation under the width of the metallized film and the number of metal strings, and perform evaporation to obtain a metallized film covering the metal layer;

[0094] A cutting module, for cutting the metallized film according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wavy cutting, and double-side wavy cutting;

[0095] The container acquisition module is used to process the metallized film according to preset steps to obtain a precision film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding and packaging.

[0096] Based on the same inventive concept, the present application also provides an electronic device as shown, including:

[0097] processor;

[0098] a memory for storing processor-executable instructions;

[0099] The processor is configured to execute to implement a method for manufacturing a precision thin film capacitor as provided above.

[0100] Based on the same inventive concept, the present application also provides a non-temporary computer-readable storage medium. When the instructions in the storage medium are executed by the processor of an electronic device, the electronic device can execute a precision thin film capacitor manufacturing method as provided above.

[0101] Since the electronic device described in this embodiment is an electronic device used to implement the information processing method in the embodiment of the present invention, based on the information processing method described in the embodiment of the present invention, those skilled in the art will be able to understand the specific implementation of the electronic device of this embodiment and its various variations. Therefore, how the electronic device implements the method in the embodiment of the present invention will not be described in detail here. As long as the electronic device used by those skilled in the art to implement the information processing method in the embodiment of the present invention falls within the scope of protection of the present invention.

[0102] It will be understood by those skilled in the art that embodiments of the present invention may be provided as methods, systems, or computer program products. Thus, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0103] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0104] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0105] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0106] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0107] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.

Claims

1. A method for manufacturing a precision film capacitor, characterized in that: The method comprises: Based on plasma discharge, the vapor deposition surface of the base film is plasma treated to obtain a metallized film; Determine the width of the metallized film and the number of metal strings, as well as the corresponding side coating width deviation and the corresponding middle coating width deviation under the width of the metallized film and the number of metal strings, and perform evaporation to obtain a metallized film covering the metal layer, including: when the width of the metallized film is ≤14.5mm and the number of metal strings is an odd number, the side coating width deviation and the middle coating width deviation are both ±0.15mm; when the width of the metallized film is ≤14.5mm and the number of metal strings is an even number, the side coating width deviation is ±0.30mm, and the middle coating width deviation is ±0.15mm; when the width of the metallized film is greater than 14.5mm and ≤38mm, the metal When the number of strings is an odd number, the side coating width deviation and the middle coating width deviation are both ±0.20mm; when the width of the metallized film is greater than 14.5mm and ≤38mm, when the number of metal strings is an even number, the side coating width deviation is ±0.40mm, and the middle coating width deviation is ±0.20mm; when the width of the metallized film is greater than 38mm, and the number of metal strings is an odd number, the side coating width deviation is ±0.30mm, and the middle coating width deviation is ±0.20mm; when the width of the metallized film is greater than 38mm, and the number of metal strings is an even number, the side coating width deviation is ±0.60mm, and the middle coating width deviation is ±0.20mm; Cutting the metallized film according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wavy cutting, and double-side wavy cutting; The metallized film is processed according to preset steps to obtain a precision thin film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding and packaging.

2. A method for manufacturing a precision thin film capacitor according to claim 1, characterized in that: Cutting the metallized film according to a preset cutting method includes: The metallized film is cut according to the shape requirements and size deviations of each preset cutting method.

3. The method for manufacturing a precision thin film capacitor according to claim 1, wherein: The winding step includes: When the preset cutting mode is straight cutting and the pitch of the winding core is ≤27.5mm, the misalignment range of the winding core is controlled within 0.5mm±0.2mm; When the preset cutting mode is wave cutting and the pitch of the winding core is ≤27.5mm, the misalignment range of the winding core is controlled within 0.55mm±0.2mm; When the preset cutting mode is straight cutting and the pitch of the winding core is greater than 27.5mm, the misalignment range of the winding core is controlled within 0.5mm±0.2mm; When the preset cutting mode is wave cutting and the pitch of the winding core is greater than 27.5 mm, the misalignment range of the winding core is controlled within 0.65 mm ± 0.2 mm.

4. The method for manufacturing a precision thin film capacitor according to claim 1, wherein: In the hot pressing step, including: Hot pressing temperature is within 125℃±5℃; Hot pressing time is within 360s±30s; The type of hot press is a large hot press, wherein the number of cores is 1247, and the pressure provided by the large hot press is 6.3MPa±0.1MPa.

5. The method for manufacturing a precision thin film capacitor according to claim 1, wherein: The gold spraying step includes: The tin content of the alloy used is >60%.

6. The method for manufacturing a precision thin film capacitor according to claim 1, wherein: The welding steps include: The welding power source adopts digital inverter power supply and non-blocking cylinder to provide pressure.

7. A precision film capacitor manufacturing and processing device, characterized in that: A method for manufacturing a precision thin film capacitor according to any one of claims 1 to 6, wherein the device comprises: A discharge processing module, used for performing plasma treatment on the vapor deposition surface of the base film based on plasma discharge to obtain a metallized film; an evaporation module, configured to determine the width of the metallized film and the number of metal strings, as well as the side coating width deviation and the middle coating width deviation corresponding to the width of the metallized film and the number of metal strings, and to perform evaporation to obtain a metallized film covering the metal layer; A cutting module, configured to cut the metallized film according to a preset cutting method, wherein the preset cutting method includes straight cutting, single-side wavy cutting, and double-side wavy cutting; The container acquisition module is used to process the metallized film according to preset steps to obtain a precision film capacitor, wherein the preset steps include: winding, hot pressing, gold spraying, welding and packaging.

8. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is configured to execute to implement a method for manufacturing a precision thin film capacitor according to any one of claims 1 to 6.

9. A non-transitory computer-readable storage medium, characterized in that When the instructions in the storage medium are executed by a processor of an electronic device, the electronic device is enabled to implement a method for manufacturing a precision thin film capacitor according to any one of claims 1 to 6.

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