A chip-integrated multi-beam antenna array

Abstract

This invention relates to the field of signal transmission technology, and more particularly to a chip-integrated multi-beam antenna array. The chip-integrated multi-beam antenna array includes a Butler matrix feed network and antenna elements. The Butler matrix feed network adopts a three-layer structure of substrate-integrated waveguides, comprising, from bottom to top: a bottom metal layer, an intermediate dielectric layer, and a top metal layer. The intermediate dielectric layer contains multiple metal walls, and the bottom metal layer, the top metal layer, and the metal walls together form a closed waveguide structure. The Butler matrix feed network is used to perform phase shifting and power division processing on the input port feed, and the output port forms different amplitude and phase distributions among the antenna elements, thereby generating beams pointing at different angles. By realizing a Butler matrix and integrating the antenna array on a chip substrate, it features low profile, small area, and the ability to be co-integrated with transceiver links, enabling the antenna array to have beam scanning capability in terahertz communication.

Description

Technical Field

[0001] This invention relates to the field of signal transmission technology, and in particular to a chip-integrated multi-beam antenna array. Background Technology

[0002] Terahertz, as an advanced wireless transmission technology for 6G, offers advantages such as greater bandwidth and higher transmission rates. However, existing terahertz wireless transmission technologies often use high-gain antennas with extremely narrow beamwidths. The disadvantages of these antennas are their large size, fixed beamwidth, and inability to achieve beam scanning.

[0003] To achieve beam scanning by synthesizing the radiation pattern of multiple antennas, a beamforming network is typically required. The beamforming network achieves beamforming by performing phase shifting and power division within its internal structure, creating a regular amplitude and phase distribution among different antenna elements. For analog beamforming networks, feeding from different input ports can create different amplitude and phase distributions among antenna elements, thus generating beams pointing at different angles. Beam-scanning antennas greatly enhance the capabilities of radar and communication systems due to their useful spatial diversity characteristics. In the microwave and millimeter-wave bands, beam-scanning antennas are often implemented using phased arrays. However, in the terahertz band, there are currently no low-loss, mature phase shifters available for implementing phased array antennas.

[0004] The above content is only used to help understand the technical solution of the present invention and does not represent an admission that the above content is prior art. Summary of the Invention

[0005] The main objective of this invention is to provide a chip-integrated multi-beam antenna array, which aims to solve the technical problem that it is difficult to achieve antennas with beam scanning function in the terahertz band in the prior art.

[0006] To achieve the above objectives, the present invention proposes a chip-integrated multi-beam antenna array, which includes: a Butler matrix feed network and antenna array elements;

[0007] The Butler matrix feed network adopts a three-layer structure of substrate integrated waveguide, which includes, from bottom to top: bottom metal, middle dielectric layer and top metal;

[0008] The intermediate layer medium contains multiple metal walls, and the bottom metal, the top metal, and each of the metal walls together form a closed waveguide structure;

[0009] The Butler matrix feed network is used to perform phase shifting and power division processing on the feed at the input port, and to form different amplitude and phase distributions among the antenna elements at the output port, thereby generating beams pointing at different angles.

[0010] Optionally, the Butler matrix feed network includes: a first phase shifter, a first connection structure, a second phase shifter, a second connection structure, more than one bridge structure, and more than one switch;

[0011] The first phase shifter is connected to the input port through one of the bridge structures, the first phase shifter is connected to the second phase shifter through another bridge structure and the first connection structure, and the second phase shifter is connected to the antenna array element through the second connection structure;

[0012] The first phase shifter is arranged in parallel with one of the circuit breakers, and the second phase shifter is arranged in parallel with the other circuit breaker.

[0013] Optionally, the bridge structure includes: a first rectangular region in the central area enclosed by the metal wall, wherein the distance from the port edge of the bridge structure to the metal wall of the first rectangular region gradually narrows;

[0014] The longitudinal length from the port edge of the bridge structure to the first rectangular region and the length of the metal wall in the first rectangular region are set according to the port transmission parameters of the bridge structure;

[0015] The spacing width of the metal walls in the first rectangular region is set according to the port width of the bridge structure;

[0016] The bridge structure is used to distribute energy evenly to the two output ports with a phase difference of a first preset angle when the input port is powered.

[0017] Optionally, the circuit breaker includes: a second rectangular region formed by the metal wall surrounding the central region, the distance between the port edge of the circuit breaker and the metal wall of the second rectangular region gradually narrows, and the first input port and the first output port of the circuit breaker are disposed opposite to each other on both sides of the second rectangular region, and the second input port and the second output port are disposed opposite to each other on both sides of the second rectangular region;

[0018] The longitudinal length from the port edge of the switch to the second rectangular region and the length of the metal wall in the second rectangular region are set according to the port transmission parameters of the switch;

[0019] The spacing width of the metal walls in the second rectangular region is set according to the port width of the switch;

[0020] The switch is used to distribute all energy to the second output port for output when the first input port is powered, and also to distribute all energy to the first output port for output when the second input port is powered.

[0021] Optionally, the first phase shifter includes: a first gradient transition region formed by the metal wall, which is narrow at the center and wide at the port.

[0022] The longitudinal length from the edge of the input port to the edge of the output port of the first phase shifter is set according to the length of the switch;

[0023] The width of the center position of the first phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the first phase shifter;

[0024] The first phase shifter is used to generate a phase difference at the output port that is at a second preset angle relative to the input port when the input port is powered.

[0025] Optionally, the second phase shifter includes: a second gradient transition region formed by the metal wall, which is narrow at the center and wide at the port.

[0026] The longitudinal length from the edge of the input port to the edge of the output port of the second phase shifter is set according to the length of the switch;

[0027] The width of the center position of the second phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the second phase shifter;

[0028] The second phase shifter is used to generate a phase difference at the output port that is at a third preset angle relative to the input port when the input port is powered.

[0029] Optionally, the length of the metal wall in the first connection structure is set according to the waveguide wavelength of the lowest frequency point in the operating frequency band of the multi-beam antenna array integrated in the chip, and the spacing of the metal walls in the first connection structure is the same.

[0030] Optionally, the length of the metal wall in the second connection structure is set according to the waveguide wavelength of the lowest frequency point in the operating frequency band of the multi-beam antenna array integrated in the chip, and the spacing of the metal walls in the second connection structure is the same.

[0031] Optionally, the antenna array element includes: a dielectric resonator antenna fed by a slot;

[0032] The dielectric resonator antenna has a cuboid structure and is disposed on the top metal layer;

[0033] The length, width, and height of the dielectric resonator antenna are set according to the field distribution pattern and the waveguide wavelength.

[0034] Optionally, a rectangular slot is provided on the top metal layer, and the dielectric resonator antenna is disposed on the rectangular slot;

[0035] The length and width of the rectangular slot are set according to the frequency of the radiated electromagnetic field and the return loss of the antenna.

[0036] The distance between the center of the rectangular slot and the edge of the top metal layer is set according to the return loss of the antenna.

[0037] This invention provides a chip-integrated multi-beam antenna array, comprising a Butler matrix feed network and antenna elements. The Butler matrix feed network adopts a three-layer structure of substrate-integrated waveguide, comprising, from bottom to top: a bottom metal layer, an intermediate dielectric layer, and a top metal layer. The intermediate dielectric layer contains multiple metal walls, and the bottom metal layer, the top metal layer, and each of the metal walls together form a closed waveguide structure. The Butler matrix feed network is used to perform phase shifting and power division processing on the feed at the input port, and to form different amplitude and phase distributions at the output port among the antenna elements, thereby generating beams pointing at different angles. By realizing the Butler matrix and integrating the antenna array on a chip substrate, it features low profile, small area, and the ability to be co-integrated with the transceiver link, enabling the antenna array to have beam scanning capability in terahertz communication. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of the first embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0040] Figure 2 This is an exploded view of the Butler matrix feed network structure in the first embodiment of the multi-beam antenna array integrated into the chip of the present invention.

[0041] Figure 3 This is a basic structural diagram of the Butler matrix in the first embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0042] Figure 4 This is a schematic diagram of the Butler matrix feed network in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0043] Figure 5This is a schematic diagram of the bridge structure in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0044] Figure 6 This is a schematic diagram of the circuit breaker structure in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0045] Figure 7 This is a schematic diagram of the structure of the first phase shifter in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0046] Figure 8 This is a schematic diagram of the structure of the second phase shifter in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0047] Figure 9 This is an exploded view of the antenna array element structure in the third embodiment of the multi-beam antenna array integrated into the chip of the present invention;

[0048] Figure 10 This is a three-dimensional radiation pattern of one beam at 220GHz in the third embodiment of the multi-beam antenna array integrated into the chip of the present invention.

[0049] Figure 11 This is a two-dimensional radiation pattern of the four beams at 220 GHz in the third embodiment of the multi-beam antenna array integrated into the chip of the present invention.

[0050] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0051] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0052] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0053] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0054] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0055] Reference Figure 1 , Figure 1 This is a schematic diagram of the structure of the first embodiment of the multi-beam antenna array integrated into the chip of the present invention, as shown below. Figure 1 As shown, in this embodiment, the multi-beam antenna array integrated by the chip includes: a Butler matrix feed network and an antenna array element 100.

[0056] Reference Figure 2 , Figure 2 This is an exploded view of the Butler matrix feed network in the first embodiment of the chip-integrated multi-beam antenna array of the present invention. The Butler matrix feed network adopts a three-layer structure of substrate integrated waveguide, including, from bottom to top: a bottom metal 10, an intermediate dielectric layer 20, and a top metal 30. The intermediate dielectric layer 20 contains multiple metal walls 21, and the bottom metal 10, the top metal 30, and each of the metal walls 21 together form a closed waveguide structure.

[0057] It should be noted that the Butler matrix feed network can be used to perform phase shifting and power division processing on the input port feed, and the output port forms different amplitude and phase distributions among the antenna elements, thereby generating beams pointing at different angles. The basic structure of the Butler matrix is ​​as follows: Figure 3 As shown, Figure 3 This is a basic structural diagram of the Butler matrix in the first embodiment of the multi-beam antenna array integrated into the chip of the present invention. There are four input ports. Electrical signals are fed in from different input ports, and after phase shifting and power division processing within the Butler matrix, a phase difference distribution of ±90° and ±45° is formed at the four output antenna ports.

[0058] It should be understood that traditional substrate integrated waveguides use metal vias for side shielding, while this embodiment achieves a better transition between connection and transformation structures by using metal walls, top metal, and bottom metal to form a closed waveguide structure, resulting in better performance. In this three-layer structure of the substrate integrated waveguide, the number of metal walls can be set according to the number of ports and whether the ports are adjacent. The specific number of metal walls can be changed according to actual production needs and is not specifically limited in this embodiment. The values ​​of parameters a0 and b can be determined by the cutoff frequency of the substrate integrated waveguide in the required frequency band.

[0059] The width between the two metal walls can be represented by parameter a0, which is the width of the port in the feed network. The thickness of the intermediate layer dielectric can be represented by parameter b. The values ​​of parameters a0 and b can be determined based on the cutoff frequency of the substrate integrated waveguide in the required frequency band. The width of the intermediate layer metal wall can be represented by parameter t. The value of parameter t can be determined based on the selected fabrication process, as can the thickness of the top and bottom metal layers. The intermediate layer dielectric 20 can be made of semiconductor materials, such as silicon or gallium arsenide.

[0060] In one possible implementation, the width a0 between the two metal walls can be set to 0.5 mm, and the thickness b of the intermediate layer medium can be set to 0.1 mm. The thicknesses of the top and bottom metals can also be set to 0.1 mm.

[0061] In this embodiment, the chip-integrated multi-beam antenna array includes a Butler matrix feed network and antenna elements. The Butler matrix feed network adopts a three-layer structure of substrate-integrated waveguide, comprising, from bottom to top: a bottom metal layer, an intermediate dielectric layer, and a top metal layer. The intermediate dielectric layer contains multiple metal walls, and the bottom metal layer, the top metal layer, and each of the metal walls together form a closed waveguide structure. The Butler matrix feed network can be used to perform phase shifting and power division processing on the input port feed, and the output port forms different amplitude and phase distributions among the antenna elements, thereby generating beams pointing at different angles. By implementing the Butler matrix and integrating the antenna array on the chip substrate, it features low profile, small area, and the ability to be co-integrated with the transceiver link, enabling the antenna array to have beam scanning capability in terahertz communication.

[0062] Reference Figure 4 , Figure 4 This is a schematic diagram of the Butler matrix feeding network in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention, as shown below. Figure 4As shown, in this embodiment, the contents that are the same as or similar to those in the first embodiment described above can be referred to the above description and will not be repeated hereafter. The Butler matrix feed network includes: a first phase shifter 201, a first connection structure 202, a second phase shifter 203, a second connection structure 204, more than one bridge structure 205, and more than one switch 206.

[0063] It should be noted that the first phase shifter is connected to the input port through one of the bridge structures, the first phase shifter is connected to the second phase shifter through another bridge structure and the first connection structure, and the second phase shifter is connected to the antenna array element through the second connection structure; the first phase shifter is arranged in parallel with one of the switches, and the second phase shifter is arranged in parallel with another switch.

[0064] Reference Figure 5 , Figure 5 This is a schematic diagram of the bridge structure in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention. The bridge structure 205 may include: a first rectangular region formed by the metal wall in the central region, and the distance between the port edge of the bridge structure and the metal wall of the first rectangular region gradually narrows. The bridge structure may include two input ports (refer to port 1 and port 2 in the figure) and two output ports (port 3 and port 4 in the figure) for distributing energy evenly to the two output ports with a phase difference of a first preset angle when the input ports are fed. The two input ports of the bridge structure are isolated from each other, and when one input port is fed, the other input port does not receive energy. The first preset angle can be set to 90°, that is, the bridge structure 205 can be a 90° bridge.

[0065] Furthermore, the two input ports and two output ports of the bridge structure can be arranged adjacently as shown in the figure, sharing a single metal wall, or they can be arranged separately by two metal walls. No specific limitation is made in this embodiment.

[0066] It should be noted that the longitudinal length (represented by parameter la0) from the port edge of the bridge structure to the first rectangular region and the length of the metal wall in the first rectangular region (represented by parameter la1) are set according to the port transmission S-parameter of the bridge structure. The spacing width (represented by parameter a1) of the metal walls in the first rectangular region is set according to the port width of the bridge structure (i.e., the aforementioned parameter a0).

[0067] It should be understood that the parameter la0 needs to be greater than the amplitude formula for the port transmission parameters at the center frequency of operation before it can be taken. The amplitude formula is:

[0068] magnitude(S1(3,1))&magnitude(S1(4,1))<-3.7dB

[0069] Where magnitude(S1(3,1)) is the amplitude of the S-parameter transmitted between port 3 and port 1 of the bridge structure, and magnitude(S1(4,1)) is the amplitude of the S-parameter transmitted between port 4 and port 1 of the bridge structure. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, in which case parameter la0 = 1.5 * a0.

[0070] Furthermore, the parameter a0 has a larger value than the parameter a1, and (2a1-a0) / a0 needs to be between 10% and 20%. In one possible implementation, it can be set to 15%.

[0071] Furthermore, the value of parameter la1 can also be determined based on the phase of the S-parameters transmitted at the port, that is, it can be determined under the condition that the phase formula is satisfied at the center frequency of operation. The phase formula is:

[0072] Phase(S1(4,1))-Phase(S1(3,1))=90°

[0073] Where Phase(S1(4,1)) represents the phase of the S-parameters transmitted between ports 4 and 1 of the bridge structure, and Phase(S1(3,1)) represents the phase of the S-parameters transmitted between ports 3 and 1 of the bridge structure. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, in which case parameter la1 = 1.02 * a0.

[0074] Reference Figure 6 , Figure 6 This is a schematic diagram of the switch structure in the second embodiment of the multi-beam antenna array integrated into the chip of the present invention. The switch 206 may include: a second rectangular region formed by the metal wall surrounding the central region; the distance between the port edge of the switch and the metal wall of the second rectangular region gradually narrows; the first input port and the first output port of the switch are arranged opposite each other on both sides of the second rectangular region; and the second input port and the second output port are arranged opposite each other on both sides of the second rectangular region. The switch can be used to distribute all energy to the second output port (port 4) for output when the first input port (port 1) is powered, and also to distribute all energy to the first output port (port 3) for output when the second input port (port 2) is powered. That is, the switch can transfer energy from one port to a port diagonally opposite it.

[0075] It should be noted that the longitudinal length from the port edge of the switch to the second rectangular area (represented by parameter la00) and the length of the metal wall in the second rectangular area (represented by parameter la2) are set according to the port transmission parameters of the switch; the spacing width of the metal wall in the second rectangular area (represented by parameter a2) is set according to the port width of the switch (i.e., the aforementioned parameter a0).

[0076] It should be understood that the parameter la00 needs to be greater than the amplitude formula for the port transmission parameters at the operating center frequency point before it is taken. The amplitude formula is:

[0077] magnitude(S2(4,1))<-0.3dB

[0078] Where magnitude(S2(3,1)) is the amplitude of the S-parameter transmitted between port 3 and port 1 of the switch. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, in which case parameter la00 = 1.5 * a0.

[0079] Furthermore, the parameter a0 has a larger value than the parameter a2, and (2a2-a0) / a0 needs to be between 10% and 20%. In one possible implementation, it can be set to 15%.

[0080] Furthermore, the value of parameter la2 can also be determined based on the amplitude of the S-parameters transmitted at the port, that is, it can be determined under the condition that the amplitude formula is satisfied at the center frequency of operation. The amplitude formula is:

[0081] magnitude(S2(4,1))-magnitude(S2(3,1))>-27dB

[0082] Where magnitude(S2(4,1)) is the amplitude of the S-parameter transmitted between port 4 and port 1 of the switch. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, in which case parameter la2 = 1.95 * a0.

[0083] Reference Figure 7 , Figure 7This is a schematic diagram of the first phase shifter in a second embodiment of the multi-beam antenna array integrated into the chip of the present invention. The first phase shifter 201 may include a first gradient transition region formed by the metal wall, narrow at the center and wide at the port. The first phase shifter can be used to generate a phase difference at the output port that exists at a second preset angle compared to the input port when the input port is fed. The second preset angle can be set to 45°, meaning the first phase shifter 201 can be a 45° phase shifter. The first gradient transition region can be a linear transition (sloping straight line) or a non-linear transition (curve).

[0084] It should be noted that the longitudinal length (represented by parameter lb1) from the edge of the input port to the edge of the output port of the first phase shifter is set according to the length of the switch (i.e., lb1 = 2 * la00 + la2). The width at the center position of the first phase shifter (represented by parameter a3) and the offset distance (represented by parameter loff1) from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the first phase shifter. The value of a3 is less than the port width of the first phase shifter (i.e., the aforementioned parameter a0).

[0085] It should be understood that parameter a3 needs to be taken when the amplitude formula of the port transmission parameters at the center frequency of operation is satisfied. The amplitude formula is:

[0086] magnitude(S3(2,1))<-0.3dB

[0087] Where magnitude(S3(2,1)) is the amplitude of the S-parameter transmitted between port 2 and port 1 of the first phase shifter. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, in which case parameter a3 = 0.685 * a0.

[0088] Furthermore, the value of parameter loff1 needs to be determined when the phase formula of the port transmission parameters is satisfied at the center frequency of operation. The phase formula is:

[0089] Phase(S3(2,1))-Phase(S2(4,1))=45°

[0090] Where Phase(S3(2,1)) represents the phase of the S-parameters transmitted between ports 2 and 1 of the first phase shifter, and Phase(S2(4,1)) represents the phase of the S-parameters transmitted between ports 4 and 1 of the switch. That is, for the same physical length, the phase generated by the first phase shifter should be 45° longer than the phase generated by the switch. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, where parameter loff1 = 1.95 * a0.

[0091] Reference Figure 8 , Figure 8 This is a schematic diagram of the second phase shifter in a second embodiment of the multi-beam antenna array integrated into the chip of the present invention. The second phase shifter 203 may include a second gradually transitioning region formed by the metal wall, which is narrow at the center and wide at the port. The second phase shifter can be used to generate a phase difference at the output port that is at a third preset angle relative to the input port when the input port is fed. The third preset angle can be set to 0°, that is, the second phase shifter 203 can be a 0° phase shifter, and the phase difference generated by the 0° phase shifter is the same as the phase difference generated by the switch. The second gradually transitioning region can be a linear transition (sloping straight line) or a non-linear transition (curve).

[0092] It should be noted that the longitudinal length (represented by parameter lb2) from the edge of the input port to the edge of the output port of the second phase shifter is set according to the length of the switch (i.e., lb2 = 2 * la00 + la2). The width of the center position of the second phase shifter (represented by parameter a4) and the offset distance (represented by parameter loff2) from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the second phase shifter. The value of a4 is less than the port width of the first phase shifter (i.e., the aforementioned parameter a0).

[0093] It should be understood that parameter a4 needs to be taken when the amplitude formula of the port transmission parameters at the center frequency of operation is satisfied. The amplitude formula is:

[0094] magnitude(S4(2,1)) < -0.3dB

[0095] Where magnitude(S4(2,1)) is the amplitude of the S-parameter transmitted between port 2 and port 1 of the second phase shifter. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, in which case parameter a4 = 0.685 * a0.

[0096] Furthermore, the value of parameter loff2 needs to be determined when the phase formula of the port transmission parameters at the operating center frequency is satisfied. The phase formula is:

[0097] Phase(S4(2,1))-Phase(S2(4,1))=0°

[0098] Where Phase(S4(2,1)) represents the phase of the S-parameters transmitted between ports 2 and 1 of the second phase shifter, and Phase(S2(4,1)) represents the phase of the S-parameters transmitted between ports 4 and 1 of the switch. That is, for the same physical length, the phase generated by the second phase shifter should be 0° greater than the phase generated by the switch. In one possible implementation, the center frequency of the chip-integrated multi-beam antenna array is 220 GHz, where parameter loff1 = 0.24 * a0.

[0099] Furthermore, the length of the metal wall in the first connection structure 202 is set according to the waveguide wavelength of the lowest frequency point in the operating frequency band of the multi-beam antenna array integrated in the chip, and the spacing of the metal walls in the first connection structure 202 is the same.

[0100] It should be understood that the first and second connecting structures serve to connect the aforementioned structures and also act as a smooth transition area. From the perspective of smooth transition, the length of the connecting and transition structure should be as long as possible; however, from the perspective of miniaturization and reducing dielectric loss, the length of the connecting and transition structure should be as short as possible.

[0101] It should be noted that the physical length of the first connection structure 202 should be greater than three waveguide wavelengths at the lowest frequency point of the operating frequency band. In one possible implementation, the lowest frequency point of the operating frequency band is 200 GHz, the waveguide wavelength under silicon filling is approximately 0.43 mm, and the length of the first connection structure 202 should be greater than 1.29 mm, although an actual value of 1.5 mm is possible.

[0102] Furthermore, the length of the metal wall in the second connection structure 204 is set according to the waveguide wavelength of the lowest frequency point in the operating frequency band of the multi-beam antenna array integrated in the chip, and the spacing of the metal walls in the second connection structure 204 is the same.

[0103] It should be noted that the physical length of the second connection structure 204 should be greater than five waveguide wavelengths at the lowest frequency of the operating band. Furthermore, if the spacing between the ports is less than the spacing between the antenna elements, the physical length of the second connection structure 204 should be increased by at least three additional waveguide wavelengths. In one possible implementation, the spacing between the ports is 0 mm, the spacing between the antenna elements is 0.37 mm, and the actual length of the second connection structure 204 is 3.5 mm.

[0104] Furthermore, the side with the smaller slope / curvature of the first phase shifter (i.e., the 45° phase shifter) and the second phase shifter (i.e., the 0° phase shifter) should be placed close to the switch. If the layer with the larger curvature is adjacent to the switch, there will be a large mode mismatch in the electromagnetic field from the bridge structure to the phase shift of the first phase shifter and the direction of the second phase shifter, which may lead to performance degradation.

[0105] In this embodiment, the Butler matrix feeding network includes: a first phase shifter, a first connection structure, a second phase shifter, a second connection structure, more than one bridge structure, and more than one switch. The first phase shifter is connected to an input port via one of the bridge structures, and the first phase shifter is connected to the second phase shifter via another bridge structure and the first connection structure. The second phase shifter is connected to the antenna array element via the second connection structure. The first phase shifter and one switch are arranged in parallel, and the second phase shifter and another switch are arranged in parallel. By distributing energy and generating the required phase difference through the bridge structure, the switch transmits energy from one port to a port in the diagonal direction. The first and second phase shifters generate a phase difference, realizing the Butler matrix and integrating the antenna array on the chip substrate, enabling the antenna array to have beam scanning capability in terahertz communication.

[0106] Reference Figure 9 , Figure 9 This is an exploded view of the antenna array elements in the third embodiment of the multi-beam antenna array integrated into the chip of the present invention. Based on the above embodiments, a third embodiment of the multi-beam antenna array integrated into the chip of the present invention is proposed. For example... Figure 9 As shown, in this embodiment, the same or similar content as in the above embodiments can be referred to the above description, and will not be repeated hereafter.

[0107] The antenna array element includes: a dielectric resonator antenna fed by a slot; the dielectric resonator antenna has a cuboid structure and is disposed on the top layer metal; the length (represented by parameter lo), width (represented by parameter wo), and height (represented by parameter ho) of the dielectric resonator antenna are set according to the field distribution mode and the waveguide wavelength. A rectangular slot 23 is provided on the top layer metal, and the dielectric resonator antenna is disposed on the rectangular slot; the length (represented by parameter ls) and width (represented by parameter ws) of the rectangular slot are set according to the frequency of the radiated electromagnetic field and the return loss of the antenna; the distance (represented by parameter po) between the center of the rectangular slot and the edge of the top layer metal (refer to the metal sidewall 22 in the diagram) is set according to the return loss of the antenna.

[0108] It should be noted that electromagnetic energy radiates into space from the gaps in the top metal layer. Simultaneously, the frequency and distribution pattern of this radiated electromagnetic field match the field distribution pattern within the dielectric block, thus achieving dielectric resonance. Using a dielectric resonator antenna can improve the directivity, thereby increasing the gain.

[0109] In one possible implementation, the waveguide wavelength is 220 GHz in a silicon dielectric with a dielectric constant of 11.9, and the parameters wo and lo are equal to 1.625 times the waveguide wavelength, the parameter ho is equal to 0.9 times the waveguide wavelength, the parameter ws is equal to 0.16 times the waveguide wavelength, the parameter ls is equal to 0.564 times the waveguide wavelength, and the parameter po is equal to 0.47 times the waveguide wavelength.

[0110] The multi-beam antenna array integrated in this invention generates beams pointing at different angles, which can be referred to as... Figure 10 and Figure 11 ,in, Figure 10 This is a three-dimensional radiation pattern of one beam at 220GHz in the third embodiment of the multi-beam antenna array integrated into the chip of the present invention. Figure 11 This is a two-dimensional radiation pattern of the four beams at 220 GHz in the third embodiment of the multi-beam antenna array integrated into the chip of the present invention.

[0111] The above are merely preferred embodiments of the present invention and do not limit the scope of the patent. Any equivalent structural or procedural transformations made based on the description and drawings of the present invention, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of the present invention.

[0112] Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0113] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0114] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

Claims

1. A chip-integrated multi-beam antenna array, characterized by, The chip-integrated multi-beam antenna array operates in the terahertz frequency band and is implemented on the chip substrate. The chip-integrated multi-beam antenna array includes: a Butler matrix feed network and antenna array elements. The Butler matrix feed network adopts a three-layer structure of substrate integrated waveguide, which includes, from bottom to top: bottom metal, middle dielectric layer and top metal; The intermediate layer medium contains multiple metal walls, and the bottom metal, the top metal, and each of the metal walls together form a closed waveguide structure; The Butler matrix feed network is used to perform phase shifting and power division processing on the feed at the input port, and to form different amplitude and phase distributions at the output port among the antenna elements, thereby generating beams pointing at different angles. The Butler matrix feed network includes: a first phase shifter, a first connection structure, a second phase shifter, a second connection structure, more than one bridge structure, and more than one switch; The first phase shifter is connected to the input port through one of the bridge structures, the first phase shifter is connected to the second phase shifter through another bridge structure and the first connection structure, and the second phase shifter is connected to the antenna array element through the second connection structure; The first phase shifter is arranged in parallel with one of the circuit breakers, and the second phase shifter is arranged in parallel with the other circuit breaker.

2. The chip-integrated multi-beam antenna array of claim 1, wherein, The bridge structure includes: a first rectangular region in the central area enclosed by the metal wall, wherein the distance from the port edge of the bridge structure to the metal wall of the first rectangular region gradually narrows; The longitudinal length from the port edge of the bridge structure to the first rectangular region and the length of the metal wall in the first rectangular region are set according to the port transmission parameters of the bridge structure; The spacing width of the metal walls in the first rectangular region is set according to the port width of the bridge structure; The bridge structure is used to distribute energy evenly to the two output ports with a phase difference of a first preset angle when the input port is powered.

3. The chip-integrated multi-beam antenna array of claim 1, wherein, The circuit breaker includes: a second rectangular region formed by the metal wall in the central region, the distance between the port edge of the circuit breaker and the metal wall of the second rectangular region gradually narrows, and the first input port and the first output port of the circuit breaker are arranged opposite to each other on both sides of the second rectangular region, and the second input port and the second output port are arranged opposite to each other on both sides of the second rectangular region; The longitudinal length from the port edge of the switch to the second rectangular region and the length of the metal wall in the second rectangular region are set according to the port transmission parameters of the switch; The spacing width of the metal walls in the second rectangular region is set according to the port width of the switch; The switch is used to distribute all energy to the second output port for output when the first input port is powered, and also to distribute all energy to the first output port for output when the second input port is powered.

4. The chip-integrated multi-beam antenna array as described in claim 3, characterized in that, The first phase shifter includes: a first gradient transition region formed by the metal wall, which is narrow at the center and wide at the port; The longitudinal length from the edge of the input port to the edge of the output port of the first phase shifter is set according to the length of the switch; The width of the center position of the first phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the first phase shifter; The first phase shifter is used to generate a phase difference at the output port that is at a second preset angle relative to the input port when the input port is powered.

5. The chip-integrated multi-beam antenna array as described in claim 4, characterized in that, The second phase shifter includes: a second gradient transition region formed by the metal wall, which is narrow at the center and wide at the port; The longitudinal length from the edge of the input port to the edge of the output port of the second phase shifter is set according to the length of the switch; The width of the center position of the second phase shifter and the offset distance from the metal wall at the center position to the metal wall at the port are set according to the port transmission parameters of the second phase shifter; The second phase shifter is used to generate a phase difference at the output port that is at a third preset angle relative to the input port when the input port is powered.

6. The chip-integrated multi-beam antenna array as described in claim 1, characterized in that, The length of the metal wall in the first connection structure is set according to the waveguide wavelength of the lowest frequency point in the operating frequency band of the multi-beam antenna array integrated in the chip, and the spacing of the metal walls in the first connection structure is the same.

7. The chip-integrated multi-beam antenna array as described in claim 1, characterized in that, The length of the metal wall in the second connection structure is set according to the waveguide wavelength of the lowest frequency point in the operating frequency band of the multi-beam antenna array integrated in the chip, and the spacing of the metal walls in the second connection structure is the same.

8. The chip-integrated multi-beam antenna array as described in claim 1, characterized in that, The antenna array element includes: a dielectric resonator antenna fed by a slot; The dielectric resonator antenna has a cuboid structure and is disposed on the top metal layer; The length, width, and height of the dielectric resonator antenna are set according to the field distribution pattern and the waveguide wavelength.

9. The chip-integrated multi-beam antenna array as described in claim 8, characterized in that, A rectangular slot is provided on the top metal layer, and the dielectric resonator antenna is disposed on the rectangular slot; The length and width of the rectangular slot are set according to the frequency of the radiated electromagnetic field and the return loss of the antenna. The distance between the center of the rectangular slot and the edge of the top metal layer is set according to the return loss of the antenna.

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