Ultra-short optical pulse source chip and ultra-short optical pulse source equipment

Abstract

The invention provides an ultrashort optical pulse source chip and ultrashort optical pulse source equipment, and relates to the technical field of semiconductor optoelectronic integrated devices.The ultrashort optical pulse source chip comprises an electric absorption modulated laser 110, a phase modulator 120, an optical pulse compression assembly 130 and a substrate 140, the phase modulator 120 is connected with the electric absorption modulated laser 110 and the optical pulse compression assembly 130, and the substrate 140 is connected with the optical pulse compression assembly 130. The electro-absorption modulated laser 110, the phase modulator 120 and the optical pulse compression assembly 130 are arranged on the same side of the substrate 140, and the electro-absorption modulated laser 110 is used for generating primary optical pulses; the phase modulator 120 is used for introducing chirp into the primary optical pulse to obtain a second optical pulse; and the optical pulse compression assembly 130 is used for carrying out compression and power amplification on the second optical pulse to obtain a target optical pulse. According to the invention, the ultra-short optical pulse source chip with monolithic integration and small volume can be obtained, and the ultra-short optical pulse source chip is utilized to generate high-quality ultra-short optical pulses.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic integrated devices, and in particular to an ultrashort optical pulse source chip and an ultrashort optical pulse source device. Background Art

[0002] Ultrashort optical pulse sources have important applications in optical analog-to-digital converters (ADCs), ultra-high-speed time division multiplexing (OTDM) systems, optical fiber communications, and optical fiber terahertz (THz) communications.

[0003] However, existing optical pulse generation technology cannot directly generate high-quality ultrashort optical pulses. It usually requires multi-stage fiber compression to reduce the primary pulse width and nonlinear shaping to achieve high-quality ultrashort pulses, resulting in large link losses, complex system structure and high cost. Summary of the invention

[0004] The present invention provides an ultrashort optical pulse source chip and an ultrashort optical pulse source device, which are used to solve the defects in the prior art of realizing high-quality ultrashort pulses through nonlinear shaping, resulting in large link loss, complex system structure and high cost, and realize a miniaturized ultrashort optical pulse source chip with adjustable repetition frequency.

[0005] The present invention provides an ultrashort optical pulse source chip, comprising: An electro-absorption modulated laser 110, a phase modulator 120, an optical pulse compression component 130 and a substrate 140, wherein the phase modulator 120 is connected to the electro-absorption modulated laser 110 and the optical pulse compression component 130 respectively, and the electro-absorption modulated laser 110, the phase modulator 120 and the optical pulse compression component 130 are placed on the same side of the substrate 140, wherein: The electro-absorption modulated laser 110 is used to generate primary light pulses; The phase modulator 120 is used to introduce chirp into the primary optical pulse to obtain a second optical pulse; The optical pulse compression component 130 is used to compress and power-amplify the second optical pulse to obtain a target optical pulse.

[0006] According to an ultrashort optical pulse source chip provided by the present invention, the optical pulse compression component 130 includes: a first optical amplifier, which is connected to the phase modulator 120; wherein the first optical amplifier is used to compress and power amplify the second optical pulse to obtain the target optical pulse.

[0007] According to an ultrashort optical pulse source chip provided by the present invention, the optical pulse compression component 130 includes: a chirped Bragg grating and a second optical amplifier, wherein the chirped Bragg grating is connected to the phase modulator 120 and the second optical amplifier respectively; wherein the chirped Bragg grating is used to compress the second optical pulse to obtain a third optical pulse; and the second optical amplifier is used to power amplify the third optical pulse to obtain the target optical pulse.

[0008] According to an ultrashort optical pulse source chip provided by the present invention, the electro-absorption modulated laser 110 comprises a distributed feedback laser 111 and an electro-absorption modulator 112, and the electro-absorption modulator 112 is connected to the distributed feedback laser 111 and the phase modulator 120 respectively; wherein the distributed feedback laser 111 is used to generate direct current light; the electro-absorption modulator 112 is used to modulate the direct current light to obtain the primary optical pulse when the voltage applied to the electro-absorption modulator 112 satisfies a preset voltage; the preset voltage is used to make the modulation range of the electro-absorption modulator 112 in a nonlinear region.

[0009] According to an ultrashort optical pulse source chip provided by the present invention, there is a first preset tilt angle between the output waveguide direction of the first optical amplifier and the cleaved end face of the ultrashort optical pulse source chip.

[0010] According to an ultrashort optical pulse source chip provided by the present invention, there is a second preset tilt angle between the output waveguide direction of the second optical amplifier and the cleaved end face of the ultrashort optical pulse source chip.

[0011] According to an ultrashort optical pulse source chip provided by the present invention, the active layer corresponding to the electro-absorption modulated laser 110, the active layer corresponding to the phase modulator 120 and the active layer corresponding to the optical pulse compression component 130 use the same active region material.

[0012] According to an ultrashort optical pulse source chip provided by the present invention, the top of the electro-absorption modulated laser 110, the top of the phase modulator 120 and the top of the optical pulse compression component 130 all have corresponding P-type electrodes, and electrical isolation grooves are provided between the P-type electrodes.

[0013] According to an ultrashort optical pulse source chip provided by the present invention, the P-type electrode is in the shape of a circular electrode.

[0014] The present invention also provides an ultrashort optical pulse source device, comprising any one of the ultrashort optical pulse source chips described above.

[0015] The ultrashort optical pulse source chip and the ultrashort optical pulse source device provided by the present invention are respectively connected to an electro-absorption modulated laser 110 and an optical pulse compression component 130 through a phase modulator 120, and the three are placed on the same side of a substrate 140 to form a monolithic integrated ultrashort optical pulse source chip with a small volume; and the electro-absorption modulated laser 110 is used to generate a narrower primary optical pulse, and the optical pulse compression component 130 is used to compress and power-amplify a second optical pulse introduced with chirp, so as to obtain a narrower target optical pulse, and the power of the optical pulse can be increased by power amplification, so as to obtain a high-quality ultrashort optical pulse. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 It is a schematic diagram of the structure of the ultrashort optical pulse source chip provided by the present invention.

[0018] Figure 2 It is a schematic diagram of the top view structure of the ultrashort optical pulse source chip provided by the present invention.

[0019] Figure 3 It is a side view structural schematic diagram of the ultrashort optical pulse source chip provided by the present invention.

[0020] Reference numerals: 100: ultrashort optical pulse source chip; 110: electro-absorption modulated laser; 120: phase modulator 120; 130: optical pulse compression component; 140: substrate; 111: distributed feedback laser; 112: electro-absorption modulator. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] Ultrashort optical pulse sources have broad application prospects in multiple scenarios such as communications, radar, medical imaging, audio processing, etc. Existing optical short pulse generation mainly includes gain-switched lasers, mode-locked lasers, chirped dispersion compensation compression and other technical paths.

[0023] However, existing optical short pulse sources all have different defects. For example, the output pulse width of the gain-switched laser is large, the optical pulse repetition frequency is low, and it has obvious chirp and time jitter; the mode-locked laser can output high-repetition-rate, ultra-short pulses, but its repetition frequency is difficult to tune due to the limitation of the cavity length; the chirp dispersion compensation compression scheme can generate super pulses with adjustable repetition frequency. Its typical structure includes a phase modulator 120 for generating chirps, an intensity modulator for selecting the pulse chirp direction and pulse cutting, and a dispersive medium for pulse compression. The pulse width is related to parameters such as quality, chirp amount, linearity, dispersion compensation degree, and initial pulse cutting window. In traditional methods, intensity modulators are mostly based on Mach-Zehnder interference structures. The cutting window width generated by this method is 50% of the modulation period. The selected chirp component contains more nonlinear components. After linear dispersion compensation compression, the nonlinear parts of the two wings of the pulse cannot be effectively compensated, forming a pulse base, which affects the pulse quality.

[0024] In addition to minimizing the width of the pulse cutting window and selecting only the linear chirp part, the method of improving pulse quality in the chirp dispersion compensation compression scheme also includes improving pulse quality by post-stage pulse shaping. Multi-stage fiber compression is usually used to reduce the primary pulse width, and high-quality ultra-short pulses are achieved through nonlinear shaping. However, this process usually involves nonlinear spectrum broadening and filtering, with large link losses. One or more stages of optical amplification are required, and the optical fiber used for dispersion compensation and nonlinear spectrum broadening is more than 100 meters, resulting in a large system size, complex structure, and high cost.

[0025] Based on the above problems, the present invention proposes an ultrashort optical pulse source chip, which connects an electro-absorption modulated laser 110 and an optical pulse compression component 130 respectively through a phase modulator 120, and places the three on the same side of a substrate 140 to form a monolithic integrated ultrashort optical pulse source chip with a small volume; and, the electro-absorption modulated laser 110 is used to generate a narrower primary optical pulse, and the optical pulse compression component 130 is used to compress and power-amplify the second optical pulse introduced with chirp, so as to obtain a narrower target optical pulse, and at the same time, the power of the optical pulse can be increased by power amplification, so as to obtain a high-quality ultrashort optical pulse.

[0026] Combine the following Figure 1-Figure 3 The ultrashort optical pulse source chip of the present invention is described.

[0027] Figure 1 is one of the structural schematic diagrams of the ultrashort optical pulse source chip provided by the present invention, such as Figure 1 As shown, the ultrashort optical pulse source chip 100 includes: An electro-absorption modulated laser 110, a phase modulator 120, an optical pulse compression component 130 and a substrate 140, wherein the phase modulator 120 is connected to the electro-absorption modulated laser 110 and the optical pulse compression component 130 respectively, and the electro-absorption modulated laser 110, the phase modulator 120 and the optical pulse compression component 130 are placed on the same side of the substrate 140, wherein: The electro-absorption modulated laser 110 is used to generate primary light pulses; The phase modulator 120 is used to introduce chirp into the primary optical pulse to obtain a second optical pulse; The optical pulse compression component 130 is used to compress and power-amplify the second optical pulse to obtain a target optical pulse.

[0028] Here, the substrate 140 is also called a substrate, and the substrate may be made of III-V semiconductor materials such as indium phosphide or gallium arsenide. The phase modulator 120 modulates the phase of the optical pulse based on the electro-optic effect of the semiconductor material.

[0029] In the embodiment of the present invention, the distributed feedback laser 111 in the electro-absorption modulated laser 110 generates direct current light, and the electro-absorption modulator 112 generates primary light pulses by modulating the direct current light through an externally applied voltage.

[0030] Here, compression refers to compressing the width of the second optical pulse to obtain an ultrashort optical pulse; and power amplification refers to increasing the gain of the ultrashort optical pulse.

[0031] In the embodiment of the present invention, the material system growth structure of the electro-absorption modulated laser 110 and the phase modulator 120 includes, from bottom to top, a substrate, a buffer layer, a lower confinement layer, an active layer, an upper confinement layer, an upper cap layer and an ohmic contact layer.

[0032] In an embodiment of the present invention, the phase modulator 120, after applying a suitable voltage drive, inputs an external radio frequency signal. The external radio frequency signal and the radio frequency signal applied to the electro-absorption modulator 112 are generated by the same signal source, and the phase difference between the two signals is controlled by a phase shifter, thereby avoiding the influence of the inconsistent frequency of the external signal on the two modulators. After the optical pulse enters the phase modulator 120 driven by the radio frequency signal of the same frequency, the phase modulator 120 will introduce a periodic sinusoidal frequency chirp to the optical pulse. The delay between the two modulators is introduced by the phase shifter. By adjusting the phase shifter, the phase relationship between the modulators can be changed, and the chirp component on the pulse can be controlled to be as linear as possible, and the positive and negative of the chirp can also be changed. After passing through the intensity modulator and the phase modulator 120, the DC light obtains a chirp-intensity distribution that is conducive to subsequent compression, and the frequency components of the leading and trailing edges of the optical pulse change.

[0033] In the embodiment of the present invention, the electro-absorption modulated laser 110 and the optical pulse compression component 130 are respectively connected through the phase modulator 120, and the three are placed on the same side of the substrate 140 to form a monolithic integrated, small-sized ultra-short optical pulse source chip; and, the electro-absorption modulated laser 110 is used to generate a narrower primary optical pulse, and the optical pulse compression component 130 is used to compress and power-amplify the second optical pulse introduced with chirp, so as to obtain a narrower target optical pulse, and at the same time, the power of the optical pulse can be increased by power amplification, so as to obtain a high-quality ultra-short optical pulse.

[0034] In the embodiment of the present invention, the optical pulse compression component 130 may include different components to achieve compression and power amplification of the second optical pulse.

[0035] In the embodiment of the present invention, the repetition frequency of the ultrashort optical pulse source chip can be adjusted by adjusting the electrical signal input by the external radio frequency signal source.

[0036] In one embodiment, the optical pulse compression component 130 includes: a first optical amplifier, which is connected to the phase modulator 120; wherein the first optical amplifier is used to compress and power amplify the second optical pulse to obtain the target optical pulse.

[0037] Here, the first optical amplifier (Semiconductor Optical Amplifier, SOA) is used to generate optical gain under the excitation of the driving current, and at the same time use its dispersion effect to compress the chirped pulse output from the phase modulator 120. The applied excitation current should control the optical amplifier to operate in the linear region, the optical gain in the cavity is greater than the loss in the cavity, and the laser produces lasing after achieving stable oscillation. At the same time, due to the intrinsic dispersion characteristics of the SOA, that is, the transmission speed of the high-frequency component of the pulse is lower than that of the low-frequency component, the pulse with negative chirp is compressed in the SOA and the pulse width is reduced. By controlling the phase shifter, a strong linear negative chirp can be introduced into the optical pulse. Since the dispersion characteristics of the SOA are 10 times that of ordinary single-mode optical fibers, the negative chirp can be reduced. 3 Compared with single-mode fiber, it can compress optical pulses better and realize on-chip compression of optical pulses. When the length of the first optical amplifier is appropriate, the pulse compression effect is best, and chirp-free pulses with ultra-short pulse width can be obtained.

[0038] In another embodiment, the optical pulse compression component 130 includes: a chirped Bragg grating and a second optical amplifier, wherein the chirped Bragg grating is connected to the phase modulator 120 and the second optical amplifier respectively; wherein the chirped Bragg grating is used to compress the second optical pulse to obtain a third optical pulse; and the second optical amplifier is used to power amplify the third optical pulse to obtain the target optical pulse.

[0039] After the pulse passes through the chirped Bragg grating after the phase modulator 120, the chirped DC light passes through the abnormal (normal) dispersion medium, and the positive (negative) chirp will be compensated to form a raised pulse peak, while the negative (positive) chirp will be stretched in time to form a DC platform. Light of different frequencies (wavelengths) is reflected at different positions of the chirped Bragg grating, resulting in different optical paths, thereby generating dispersion compensation. By designing the variable grating period of the chirped Bragg grating, the dispersion compensation effect can be made significant, effectively reducing the length of the optical amplifier. The subsequent second optical amplifier can compensate for the additional loss caused by the light passing through the chirped Bragg grating and increase the optical power.

[0040] In the embodiment of the present invention, the material system growth structure of the first optical amplifier and the second optical amplifier includes, from bottom to top, a substrate, a buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper cover layer and an ohmic contact layer.

[0041] In one embodiment, if Figure 1 As shown, the electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112, and the electro-absorption modulator 112 is connected to the distributed feedback laser 111 and the phase modulator 120 respectively; wherein, The distributed feedback laser 111 is used to generate direct current light; The electro-absorption modulator 112 is used to modulate the DC light to obtain the primary light pulse when the voltage applied to the electro-absorption modulator 112 meets a preset voltage; the preset voltage is used to make the modulation range of the electro-absorption modulator 112 in a nonlinear region.

[0042] It should be noted that the material band structures of the distributed feedback laser 111 and the electro-absorption modulator 112 match.

[0043] In the embodiment of the present invention, the material system growth structure of the distributed feedback laser 111 includes, from bottom to top, a substrate, a buffer layer, a lower confinement layer, an active layer, an upper confinement layer, a grating layer, an upper cap layer, and an ohmic contact layer. The distributed feedback laser 111 controls the wavelength of the emitted laser by designing the grating period. Here, the wavelength of the emitted laser can be any suitable wavelength, such as 1310 nanometers (nm) and 1550nm. When working, applying a suitable current excitation can make the wavelength emit single longitudinal mode DC light.

[0044] Here, the applied voltage is a reverse bias voltage (ie, a negative voltage), and the preset voltage may be a preset negative voltage.

[0045] It should be noted that when the applied voltage is relatively small, the electro-absorption modulator 112 can only play a modulation role. When the applied voltage reaches a preset voltage, the electro-absorption modulator 112 can generate a primary pulse based on the DC light.

[0046] In the embodiment of the present invention, its gain spectrum range matches the distributed feedback laser 111, and the electro-absorption modulator 112 can modulate the DC light by applying a certain reverse bias voltage (i.e., negative voltage) and an external radio frequency signal to it during operation. The reverse bias voltage needs to make the electro-absorption modulator 112 deeply biased (i.e., apply a relatively large negative voltage) so that the modulation range enters the nonlinear region of its transmission curve. When the strength of the applied external radio frequency signal is appropriate, the electro-absorption modulator 112 modulates the DC light to generate a primary light pulse with a narrow pulse width, which extinguishes in a local range.

[0047] For example, Figure 2 is a schematic diagram of the top view of the ultrashort optical pulse source chip provided by the present invention, such as Figure 2 As shown, the top view structure of the ultrashort optical pulse source chip 100 includes: an electro-absorption modulated laser 110 , a phase modulator 120 , and an optical pulse compression component 130 . The electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112 .

[0048] For example, Figure 3 is a schematic diagram of the side view structure of the ultrashort optical pulse source chip provided by the present invention, such as Figure 3 As shown, the ultrashort optical pulse source chip 100 includes: a distributed feedback laser 111 , an electro-absorption modulator 112 , a phase modulator 120 , an optical pulse compression component 130 , and a substrate 140 .

[0049] In one embodiment, there is a first preset tilt angle between the output waveguide direction of the first optical amplifier and the cleaved end face of the ultrashort optical pulse source chip.

[0050] Here, the cleaved end face can be understood as a cross section of the ultrashort optical pulse source chip, which only represents the material system growth structure of the semiconductor components on both sides of the chip, such as the first optical amplifier material system growth structure, or the distributed feedback laser 111.

[0051] Here, the first preset inclination angle may be any suitable angle, for example, 7° to 9°.

[0052] In one embodiment, there is a second preset tilt angle between the output waveguide direction of the second optical amplifier and the cleaved end face of the ultrashort optical pulse source chip.

[0053] Here, the second preset inclination angle may be any suitable angle, for example, 7° to 9°, and the first preset inclination angle may be the same as the second preset inclination angle.

[0054] In the embodiment of the present invention, setting a tilt angle between the cleaved end faces of the first optical amplifier and the ultrashort optical pulse source chip, and setting a tilt angle between the cleaved end faces of the second optical amplifier and the ultrashort optical pulse source chip are both for preventing end face reflection.

[0055] In one embodiment, the active layer corresponding to the electro-absorption modulated laser 110 , the active layer corresponding to the phase modulator 120 , and the active layer corresponding to the optical pulse compression component 130 are made of the same active region material.

[0056] In the embodiment of the present invention, the electro-absorption modulated laser 110, the phase modulator 120 and the optical amplifier all use the same active region material, and the gain bands are matched with each other.

[0057] In one embodiment, the top of the electro-absorption modulated laser 110, the top of the phase modulator 120 and the top of the optical pulse compression component 130 all have corresponding P-type electrodes, and electrical isolation trenches are provided between the P-type electrodes.

[0058] Here, a material with a lower dielectric constant can be used to fill the P-type electrode, such as polyimide or styrene, so that the parasitic capacitance of the laser can be reduced and the modulation bandwidth can be effectively improved.

[0059] Here, the electrical isolation trench may be prepared by methods such as helium (He) ion implantation or etching.

[0060] In the embodiment of the present invention, the electrical isolation trench can isolate the driving voltage or current of different functional areas.

[0061] In one embodiment, the P-type electrode is in the shape of a circular electrode.

[0062] Here, the diameter of the circular electrode may be between 50 micrometers (μm) and 100 μm.

[0063] In the embodiment of the present invention, the P-type electrode is designed as a circular electrode to improve the high-frequency performance of the ultrashort optical pulse source chip.

[0064] Exemplarily, the ultrashort optical pulse source chip includes an electro-absorption modulated laser 110 (EML), which includes a distributed feedback laser 111 (DFB) and an electro-absorption modulator 112 (EAM), wherein the distributed feedback laser 111 is used to generate direct current light, and the deeply biased electro-absorption modulator 112 is modulated by a radio frequency signal to generate a primary optical pulse with a low duty cycle (about 10%), which can generate a primary pulse narrower than the Mach-Zehnder modulator structure, so as to more accurately select the linear part of the chirp. The phase modulator 120 introduces chirp to the primary pulse based on the electro-optical effect of the semiconductor, and the alignment of the primary pulse and the linear chirp position and the selection of the chirp direction can be achieved by tuning the phase difference of the radio frequency signal loaded on the EAM and PM. On the one hand, SOA plays the role of light amplification. On the other hand, since the dispersion coefficient of SOA is 30 femtoseconds / nanometer / millimeter and the dispersion coefficient of optical fiber is 17 picoseconds / nanometer / kilometer, the dispersion coefficient of SOA is 6 orders of magnitude higher than that of optical fiber. Through mm-level SOA, km-level pulse compression can be achieved. Therefore, SOA in this application plays the dual role of light amplification and dispersion compensation.

[0065] The ultrashort optical pulse source chip proposed in the present invention has the following advantages: the optical amplifier replaces the complex multi-stage optical fiber compression and shaping system in the prior art, realizes on-chip compression of the optical pulse width, and provides gain for the laser at the same time, thereby increasing the power of the optical pulse; the electro-absorption modulator 112 is used as an intensity modulator, and the optical pulse generated by it is narrower and has a smaller base, which is conducive to subsequent pulse width compression; the chip repetition frequency can be adjusted by an external clock, which improves the problem that the repetition frequency of a traditional mode-locked laser cannot be adjusted due to the cavity structure and is difficult to synchronize with an external clock; the monolithic integration has a small chip size, and the complete functions of a complex system architecture are realized on a single chip.

[0066] The present invention also provides an ultrashort optical pulse source device, comprising the ultrashort optical pulse source chip.

[0067] Here, the ultrashort optical pulse source device may be a device for communication.

[0068] In an embodiment of the present invention, the ultrashort optical pulse source device includes at least one ultrashort optical pulse source chip and a phase shifter. After the ultrashort optical pulse source is integrated on a single chip, multi-channel beam combining is performed, and multiple short pulse source chips are beam combined into one channel output through a multi-mode interference coupler (Multi-Mode Interference Coupler, MMI), so as to realize time division multiplexing of pulse signals and effectively improve the repetition frequency and signal transmission capacity of the pulse source. The time division multiplexing between each channel is controlled by the phase shifter.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An ultrashort optical pulse source chip, characterized in that: include: An electro-absorption modulated laser 110, a phase modulator 120, an optical pulse compression component 130 and a substrate 140, wherein the phase modulator 120 is connected to the electro-absorption modulated laser 110 and the optical pulse compression component 130 respectively, and the electro-absorption modulated laser 110, the phase modulator 120 and the optical pulse compression component 130 are placed on the same side of the substrate 140, wherein: The electro-absorption modulated laser 110 is used to generate primary light pulses; The phase modulator 120 is used to introduce chirp into the primary optical pulse to obtain a second optical pulse; The optical pulse compression component 130 is used to compress and power-amplify the second optical pulse to obtain a target optical pulse.

2. The ultrashort optical pulse source chip according to claim 1, characterized in that: The optical pulse compression component 130 includes: a first optical amplifier, which is connected to the phase modulator 120; wherein, The first optical amplifier is used to compress and power-amplify the second optical pulse to obtain the target optical pulse.

3. The ultrashort optical pulse source chip according to claim 1, characterized in that: The optical pulse compression component 130 includes: a chirped Bragg grating and a second optical amplifier, wherein the chirped Bragg grating is connected to the phase modulator 120 and the second optical amplifier respectively; wherein, The chirped Bragg grating is used to compress the second optical pulse to obtain a third optical pulse; The second optical amplifier is used to amplify the power of the third optical pulse to obtain the target optical pulse.

4. The ultrashort optical pulse source chip according to any one of claims 1 to 3, characterized in that: The electro-absorption modulated laser 110 includes a distributed feedback laser 111 and an electro-absorption modulator 112, and the electro-absorption modulator 112 is connected to the distributed feedback laser 111 and the phase modulator 120 respectively; wherein, The distributed feedback laser 111 is used to generate direct current light; The electro-absorption modulator 112 is used to modulate the DC light to obtain the primary light pulse when the voltage applied to the electro-absorption modulator 112 meets a preset voltage; the preset voltage is used to make the modulation range of the electro-absorption modulator 112 in a nonlinear region.

5. The ultrashort optical pulse source chip according to claim 2, characterized in that: An output waveguide direction of the first optical amplifier and a cleaved end face of the ultrashort optical pulse source chip have a first preset tilt angle.

6. The ultrashort optical pulse source chip according to claim 3, characterized in that: There is a second preset tilt angle between the output waveguide direction of the second optical amplifier and the cleaved end face of the ultrashort optical pulse source chip.

7. The ultrashort optical pulse source chip according to any one of claims 1 to 3, characterized in that: The active layer corresponding to the electro-absorption modulated laser 110 , the active layer corresponding to the phase modulator 120 , and the active layer corresponding to the optical pulse compression component 130 use the same active region material.

8. The ultrashort optical pulse source chip according to any one of claims 1 to 3, characterized in that: The top of the electro-absorption modulated laser 110, the top of the phase modulator 120 and the top of the optical pulse compression component 130 all have corresponding P-type electrodes, and electrical isolation grooves are provided between the P-type electrodes.

9. The ultrashort optical pulse source chip according to claim 8, characterized in that: The P-type electrode is in the shape of a circular electrode.

10. An ultrashort optical pulse source device, characterized in that: The invention comprises the ultrashort optical pulse source chip as claimed in any one of claims 1 to 9.

Images