Intelligent power module, manufacturing method of intelligent power module and chip

Abstract

The embodiment of the invention provides an intelligent power module, a manufacturing method of the intelligent power module and a chip, and the intelligent power module comprises a substrate, and an inversion power chip, a power factor correction power integrated circuit, a plurality of driving chips and a lead frame which are integrated on the substrate. The lead frame comprises a plurality of independent pins; the inverter power chip is respectively connected with the corresponding independent pins in the plurality of independent pins and the plurality of driving chips; the plurality of driving chips are respectively connected with the corresponding independent pins in the plurality of independent pins; and the power factor correction power integrated circuit is respectively connected with the corresponding independent pins in the plurality of independent pins. According to the intelligent power module, the integration level of the intelligent power module is improved, only a small number of peripheral electronic components are needed to complete cooperative work, meanwhile, the length of the circuit is shortened, the stray inductance of the system is reduced, the effects of reducing cost and increasing efficiency are achieved, and the market competitiveness is greatly improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an intelligent power module, a method for manufacturing the intelligent power module and a chip. Background Art

[0002] With the development of power electronics technology, intelligent power modules have won an increasingly large application market with their high reliability, high system performance, and ease of use. Intelligent power module IPM (Intelligent Power Module) is a replacement device that converts DC into AC to drive the compressor. IPM has the advantages of high current density, low driving power, low on-state voltage, high functional integration, and perfect protection functions. IPM generally encapsulates 6 IGBTs (Insulated Gate Bipolar Transistors) and their drive circuits to achieve DC to AC inversion. In related technologies, AC needs to be converted into DC and then adjusted by the PFC (Power Factor Correction) circuit before being connected to the IPM for use, but the circuit system is complex and cumbersome, and thus has low market competitiveness. Summary of the invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide an intelligent power module, a method for manufacturing an intelligent power module, and a chip that overcome the above problems or at least partially solve the above problems.

[0004] In order to solve the above problems, an embodiment of the present invention discloses an intelligent power module, comprising: a substrate, and an inverter power chip, a power factor correction power integrated circuit, a plurality of driver chips and a lead frame integrated on the substrate; the lead frame comprises a plurality of independent pins;

[0005] The inverter power chip is respectively connected to corresponding independent pins among the plurality of independent pins and the plurality of driving chips;

[0006] The plurality of driving chips are respectively connected to corresponding independent pins among the plurality of independent pins;

[0007] The power factor correction power integrated circuit is connected to corresponding independent pins among the plurality of independent pins respectively.

[0008] Optionally, the inverter power chip includes:

[0009] A plurality of first insulated gate bipolar transistors, wherein the plurality of first insulated gate bipolar transistors are respectively connected to the plurality of driving chips;

[0010] A plurality of first fast recovery diodes are respectively connected to corresponding first insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins.

[0011] Optionally, the plurality of driving chips include:

[0012] An upper bridge driving chip, wherein the upper bridge driving chip is respectively connected to corresponding insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins;

[0013] The lower bridge driving chip is respectively connected to the corresponding insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors and the corresponding independent pins among the plurality of independent pins.

[0014] Optionally, the power factor correction power integrated circuit includes:

[0015] a plurality of second insulated gate bipolar transistors, wherein the plurality of second insulated gate bipolar transistors are respectively connected to corresponding independent pins among the plurality of independent pins;

[0016] A plurality of second fast recovery diodes are respectively connected to corresponding second fast recovery diodes in the plurality of second insulated gate bipolar transistors and corresponding independent pins in the plurality of independent pins.

[0017] Optionally, the plurality of second insulated gate bipolar transistors include:

[0018] first insulated gate bipolar transistors, each of which is connected to a corresponding independent pin among the plurality of independent pins;

[0019] a second insulated gate bipolar transistor, wherein the second insulated gate bipolar transistor is respectively connected to corresponding independent pins among the plurality of independent pins;

[0020] The plurality of second fast recovery diodes include:

[0021] A first fast recovery diode, wherein the first fast recovery diode is connected to the first insulated gate bipolar transistor;

[0022] The second fast recovery diode and the second insulated gate bipolar transistor are respectively connected to corresponding independent pins among the plurality of independent pins and the second insulated gate bipolar transistor.

[0023] Optionally, the inverter power chip, the multiple driver chips, the power factor correction power integrated circuit and the multiple independent pins in the intelligent power module are connected by gold wire and aluminum wire bonding.

[0024] The embodiment of the present invention further discloses a method for manufacturing an intelligent power module, which is applied to manufacturing the intelligent power module as described above, and the method comprises:

[0025] Determine the parameters of multiple independent pins in the lead frame, as well as the electrical routing and layout of the substrate;

[0026] Manufacturing the lead frame according to the parameters of the plurality of independent pins, and manufacturing the substrate according to the electrical routing and layout;

[0027] The inverter power chip and the power factor correction power integrated circuit are mounted on the substrate through solder paste and sintered to form a connection;

[0028] Assembling the substrate and the lead frame after chip mounting by using solder paste;

[0029] The multiple driver chips are welded to a preset area of ​​the substrate by silver glue, and the inverter power chip, the multiple driver chips, the power factor correction power integrated circuit and the multiple independent pins are connected to obtain an intelligent power module.

[0030] Optionally, attaching the inverter power chip and the power factor correction power integrated circuit to the substrate through solder paste and completing sintering connection includes:

[0031] Printing solder pastes of the same thickness on the surface of the regions on the substrate corresponding to the inverter power chip and the power factor correction power integrated circuit respectively;

[0032] Covering the inverter power chip and the power factor correction power integrated circuit on the solder paste;

[0033] Under a preset temperature and a preset gas environment, the variable control chip and the power factor correction power integrated circuit are sintered and connected.

[0034] Optionally, assembling the substrate and the lead frame after chip mounting by using solder paste includes:

[0035] Placing the substrate after chip bonding on the lead frame;

[0036] Assembling the substrate and the lead frame after chip mounting by using solder paste;

[0037] Cleaning the solder paste volatiles remaining on the lead frame.

[0038] Optionally, the inverter power chip, the multiple driver chips, the power factor correction power integrated circuit and the multiple independent pins in the intelligent power module are connected by gold wire and aluminum wire bonding.

[0039] Optionally, the substrate comprises a copper-clad ceramic substrate.

[0040] The embodiment of the present invention further discloses a chip, which includes the intelligent power module as described above.

[0041] The embodiments of the present invention include the following advantages:

[0042] The embodiment of the present invention discloses an intelligent power module. The present invention improves the integration of the intelligent power module by packaging an inverter power chip, a power factor correction power integrated circuit, multiple driver chips and multiple independent pins in a lead frame. Alternating current can be directly connected to the intelligent power module, and the intelligent power module rectifies the alternating current into direct current for use by the intelligent power module. Only a small number of peripheral electronic components are needed to complete the coordinated work. At the same time, the length of the circuit is shortened, the stray inductance of the system is reduced, the cost is reduced and the efficiency is increased, and the market competitiveness is greatly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 is a structural block diagram of an intelligent power module provided by an embodiment of the present invention;

[0044] Figure 2 It is a flowchart of the steps of a method for manufacturing an intelligent power module provided by an embodiment of the present invention.

[0045] Description of reference numerals:

[0046] 1-substrate, 2-inverter power chip, 21-multiple first insulated gate bipolar transistors, 22-multiple first fast recovery diodes, 3-power factor correction power integrated circuit, 31-multiple second insulated gate bipolar transistors, 32-multiple second fast recovery diodes, 311-first insulated gate bipolar transistor, 312-second insulated gate bipolar transistor, 321-first fast recovery diode, 322-second fast recovery diode, 4-multiple driver chips, 41-upper bridge driver chip, 42-lower bridge driver chip, 5-lead frame. DETAILED DESCRIPTION

[0047] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0048] In the related art, it is necessary to convert AC power into DC power and then adjust it through a power factor correction power integrated circuit before connecting it to an intelligent power module for use. The circuit system is complex and cumbersome, and thus has low market competitiveness. In order to solve this technical problem, one of the core concepts of the embodiment of the present invention is that the present invention improves the integration of the intelligent power module by composite packaging of an inverter power chip, a power factor correction power integrated circuit, multiple driver chips, and multiple independent pins in a lead frame, and can directly connect AC power to the intelligent power module, which rectifies AC power into DC power for use by the intelligent power module. Only a small number of peripheral electronic components are needed to complete the coordination work, and at the same time, the length of the circuit is shortened, the stray inductance of the system is reduced, and the cost is reduced and the efficiency is increased, which greatly improves the market competitiveness.

[0049] Reference Figure 1 , shows a structural block diagram of an intelligent power module provided by an embodiment of the present invention, and the intelligent power module may specifically include:

[0050] A substrate 1, and an inverter power chip 2, a power factor correction power integrated circuit 3, a plurality of driver chips 4 and a lead frame 5 integrated on the substrate 1; the lead frame 5 includes a plurality of independent pins (not shown in the figure);

[0051] The inverter power chip 2 is respectively connected to corresponding independent pins among the multiple independent pins and the multiple driving chips 4;

[0052] A plurality of driving chips 4 are respectively connected to corresponding independent pins among the plurality of independent pins;

[0053] The power factor correction power integrated circuit 3 is connected to corresponding independent pins among the plurality of independent pins respectively.

[0054] In the present invention, it can basically include a copper-clad ceramic substrate 1 (DBC, Direct Bonded Copper on Ceramic Substrate), which is also a directly bonded copper-ceramic substrate 1. The directly bonded copper-ceramic substrate 1 is mainly composed of a ceramic insulating layer and a metal copper layer bonded to its upper and lower surfaces (or one side). Ceramic materials are usually selected such as aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN) and other materials with high insulation, high thermal conductivity and good chemical stability; the metal copper layer provides excellent conductivity and processability, which is convenient for the subsequent circuit production and connection with other electronic components. In the present invention, the inverter power chip 2 and the power factor correction power integrated circuit 3 can be integrated on the direct bonded copper-ceramic substrate 1.

[0055] The intelligent power module 10 can be applied to various medium and low power motor drive, power conversion, inverter and other applications, such as household appliances, industrial control, electric vehicle chargers, solar inverters and other scenarios.

[0056] In one embodiment, the inverter power chip 2 may include: multiple first insulated gate bipolar transistors 31121, multiple first insulated gate bipolar transistors 31121, respectively connected to multiple driving chips 4; multiple first fast recovery diodes 32122, multiple first fast recovery diodes 32122, respectively connected to corresponding first insulated gate bipolar transistors 311 in the multiple first insulated gate bipolar transistors 31121, and corresponding independent pins in multiple independent pins.

[0057] Specifically, the inverter power chip 2 may include a plurality of first insulated gate bipolar transistors 31121 (IGBT, Insulated Gate Bipolar Transistor), and a plurality of first fast recovery diodes 32122 (FRD, Fast Recovery Diode). In the present invention, the first insulated gate bipolar transistors 311 may be 6, and the number of the first fast recovery diodes 321 corresponds to the data of the first insulated gate bipolar transistors 311, which is also 6. The 6 first insulated gate bipolar transistors 311 are respectively connected to the corresponding first fast recovery diodes 321, for example: the first first insulated gate bipolar transistor 311 is connected to the first first fast recovery diode 321, the second first insulated gate bipolar transistor 311 is connected to the second first fast recovery diode 321, the third first insulated gate bipolar transistor 311 is connected to the third first fast recovery diode 321, etc. Among them, the plurality of first insulated gate bipolar transistors 31121 can be connected to the corresponding first fast recovery diodes 321 through aluminum wires. The six first insulated gate bipolar transistors 311 are respectively connected to the multiple driving chips 4, and the six first fast recovery diodes 321 are respectively connected to corresponding independent pins among the multiple independent pins.

[0058] In the present invention, IGBT is a power semiconductor device that combines the advantages of MOSFET (metal oxide semiconductor field effect transistor) and BJT (bipolar transistor), and is widely used in high voltage and high current power electronic systems. IGBT is a three-terminal device, including: Gate: used to control the switch of the device. Collector: connected to the high voltage end. Emitter: connected to the low voltage end. The working principle of IGBT is based on the control of gate voltage, and the flow of current is controlled by adjusting the gate voltage. The working principle of IGBT can be divided into two stages: On state: When a positive voltage is applied to the gate, the MOSFET part is turned on to form a low impedance channel. The low impedance channel makes the BJT part turn on, and the current flows from the collector to the emitter. Off state: When the gate voltage decreases or becomes negative, the MOSFET part is turned off, and the BJT part is also turned off, and the current stops flowing. The characteristics of IGBT are: High voltage and high current capability: IGBT can withstand high voltage (hundreds of volts to thousands of volts) and high current (tens of amperes to thousands of amperes). Low conduction loss: Compared with BJT, IGBT has lower on-resistance, so conduction loss is less. Fast switching speed: Compared with BJT, IGBT has faster switching speed and is suitable for high-frequency applications. Simple drive: Similar to MOSFET, the gate drive circuit of IGBT is relatively simple.

[0059] FRD is a semiconductor device specially designed for high-frequency switching circuits. Compared with ordinary diodes, FRD has a faster reverse recovery time, can effectively reduce switching losses, improve circuit efficiency, and is widely used in high-frequency power electronic systems such as switching power supplies, inverters, frequency converters, motor drives, etc. The working principle of FRD is similar to that of ordinary diodes, but there are significant improvements in reverse recovery characteristics: Forward conduction: When the diode is forward biased, the current flows from the anode to the cathode, and the diode is turned on. Reverse cutoff: When the diode is reverse biased, ordinary diodes take a long time to recover to the cutoff state, while FRD can complete reverse recovery in a very short time. The characteristics of FRD are: Fast reverse recovery time: The reverse recovery time is usually between a few nanoseconds and tens of nanoseconds, which is much smaller than that of ordinary diodes. Low reverse recovery current: During the reverse recovery process, the reverse recovery current of FRD is small, reducing switching losses. High frequency characteristics: Suitable for high-frequency switching circuits, such as switching power supplies, inverters, etc. High efficiency: Reduce switching losses and improve circuit efficiency. The advantages of FRD are: Improved efficiency: Reduce switching losses and improve circuit efficiency. High frequency adaptability: Suitable for high frequency switching circuits, reducing electromagnetic interference (EMI). Reliability: In high frequency applications, FRD has higher reliability and longer life.

[0060] In one embodiment, the plurality of driving chips 4 include: an upper bridge driving chip 41, which is respectively connected to corresponding insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors 31121 and corresponding independent pins among the plurality of independent pins; a lower bridge driving chip 42, which is respectively connected to corresponding insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors 31121 and corresponding independent pins among the plurality of independent pins.

[0061] Specifically, the plurality of driver chips 4 may include an upper bridge driver chip 41 and a lower bridge driver chip 42, wherein the lower bridge driver chip 42 may be connected to the corresponding insulated gate bipolar transistors in the plurality of first insulated gate bipolar transistors 31121, respectively, for example, the lower bridge driver chip 42 is connected to the first first insulated gate bipolar transistor 311, the second first insulated gate bipolar transistor 311, and the third first insulated gate bipolar transistor 311, respectively. The lower bridge driver chip 42 is also connected to the independent pins corresponding to the lower bridge chip in the plurality of independent pins. The upper bridge driver chip 41 may be connected to the corresponding insulated gate bipolar transistors in the plurality of first insulated gate bipolar transistors 31121, respectively, for example, the upper bridge driver chip 41 is connected to the fourth first insulated gate bipolar transistor 311, the fifth first insulated gate bipolar transistor 311, and the sixth first insulated gate bipolar transistor 311, respectively. The upper bridge driver chip 41 is also connected to the independent pins corresponding to the lower bridge chip in the plurality of independent pins, respectively. The lower bridge driver chip 42 and the plurality of first insulated gate bipolar transistors 31121 and the plurality of independent pins may be connected via gold wires, and the upper bridge driver chip 41 and the plurality of first insulated gate bipolar transistors 31121 and the plurality of independent pins may be connected via gold wires.

[0062] In one embodiment, the power factor correction power integrated circuit 3 may include: a plurality of second insulated gate bipolar transistors 31231, the plurality of second insulated gate bipolar transistors 31231 are respectively connected to corresponding independent pins among a plurality of independent pins; a plurality of first fast recovery diodes 32232, the plurality of first fast recovery diodes 32232 are respectively connected to corresponding first fast recovery diodes 322 among a plurality of second insulated gate bipolar transistors 31231, and corresponding independent pins among a plurality of independent pins.

[0063] Specifically, a power factor correction (PFC) integrated circuit may include a plurality of second insulated gate bipolar transistors 31231 and a plurality of first fast recovery diodes 32232. In the present invention, the number of the plurality of second insulated gate bipolar transistors 31231 may be 2, and the number of the plurality of first fast recovery diodes 32232 corresponds to the number of the plurality of second insulated gate bipolar transistors 31231, which is also 2. The two second insulated gate bipolar transistors 312 are respectively connected to the corresponding first fast recovery diodes 322, for example: the first second insulated gate bipolar transistor 312 is connected to the first first fast recovery diode 322, and the second second insulated gate bipolar transistor 312 is connected to the second first fast recovery diode 322. The plurality of second insulated gate bipolar transistors 31231 may be respectively connected to the corresponding first fast recovery diodes 322 through aluminum wires. The plurality of second insulated gate bipolar transistors 31231 are also respectively connected to the independent pins corresponding to the plurality of second insulated gate bipolar transistors 31231 in the plurality of independent pins. Multiple second insulated gate bipolar transistors 31231 can be connected to independent pins through gold wires.

[0064] PFC is used to improve the power factor (PF) of the power supply system, reduce reactive power, thereby improving the efficiency of power utilization and reducing harmonic pollution in the power grid. PFC circuits are widely used in switching power supplies, inverters, LED drivers, UPS (uninterruptible power supply) and other equipment. The main functions of the PFC circuit include: Improving the power factor: By correcting the current waveform to make it in phase with the voltage waveform, the power factor is improved. Reducing harmonic pollution: Reducing the harmonic components in the current and reducing interference with the power grid. Improving the efficiency of power utilization: Reducing the loss of reactive power and improving the efficiency of the power supply. Complying with regulatory requirements: Many countries and regions have strict requirements on the power factor of equipment, and the PFC circuit can help the equipment comply with relevant regulations.

[0065] In one embodiment, the plurality of second insulated gate bipolar transistors 31231 include: a first insulated gate bipolar transistor 311, the first insulated gate bipolar transistor 311 is respectively connected to the corresponding independent pins among the plurality of independent pins; a second insulated gate bipolar transistor 312, the second insulated gate bipolar transistor 312 is respectively connected to the corresponding independent pins among the plurality of independent pins; the plurality of first fast recovery diodes 32232 include: a first fast recovery diode 321, the first fast recovery diode 321 is connected to the first insulated gate bipolar transistor 311; a first fast recovery diode 322, the second insulated gate bipolar transistor 312 is respectively connected to the corresponding independent pins among the plurality of independent pins and the second insulated gate bipolar transistor 312.

[0066] Specifically, the plurality of second insulated gate bipolar transistors 31231 may include: a first insulated gate bipolar transistor 311 and a second insulated gate bipolar transistor 312. The plurality of first fast recovery diodes 32232 may include: a first fast recovery diode 321 and a first fast recovery diode 322. The first insulated gate bipolar transistor 311 may be connected to an independent pin corresponding to the first insulated gate bipolar transistor 311 among a plurality of independent pins, and may also be connected to the first fast recovery diode 321. The second insulated gate bipolar transistor 312 may be connected to an independent pin corresponding to the second insulated gate bipolar transistor 312 among a plurality of independent pins, and may also be connected to the first fast recovery diode 322. The first fast recovery diode 322 is also connected to an independent pin corresponding to the first fast recovery diode 322 among a plurality of independent pins. In the present invention, the first insulated gate bipolar transistor 311 and the first fast recovery diode 321 can be connected through an aluminum wire, the second insulated gate bipolar transistor 312 and the first fast recovery diode 322 can be connected through an aluminum wire, the first insulated gate bipolar transistor 311 and the independent pin can be connected through a gold wire, the second insulated gate bipolar transistor 312 and the independent pin can be connected through a gold wire, and the first fast recovery diode 322 and the independent pin are connected through a gold wire.

[0067] In one embodiment, the inverter power chip 2, the plurality of driver chips 4, the power factor correction power integrated circuit 3 and the plurality of independent pins in the intelligent power module are connected by bonding with gold wires and aluminum wires.

[0068] In the embodiment of the present invention, the substrate, and the inverter power chip, power factor correction power integrated circuit, multiple driver chips and lead frame integrated on the substrate; the lead frame includes multiple independent pins; the inverter power chip is respectively connected to the corresponding independent pins in the multiple independent pins and the multiple driver chips; the multiple driver chips are respectively connected to the corresponding independent pins in the multiple independent pins; the power factor correction power integrated circuit is respectively connected to the corresponding independent pins in the multiple independent pins. By composite packaging the inverter power chip, the power factor correction power integrated circuit, the multiple driver chips and the multiple independent pins in the lead frame, the integration of the intelligent power module is improved, the alternating current can be directly connected to the intelligent power module, and the intelligent power module rectifies the alternating current into direct current for the intelligent power module to use, and only a small number of peripheral electronic components are needed to complete the coordination work, and at the same time, the length of the circuit is shortened, the stray inductance of the system is reduced, and the cost reduction and efficiency increase effect are achieved, which greatly improves the market competitiveness.

[0069] Reference Figure 2, shows a flowchart of a method for manufacturing an intelligent power module provided by an embodiment of the present invention, the method is applied to manufacture the intelligent power module as described above, and the method may specifically include the following steps:

[0070] Step 201 , determining parameters of a plurality of independent pins in a lead frame, and electrical routing and layout of a substrate.

[0071] In the embodiment of the present invention, the parameters of the multiple independent pins of the lead frame can be designed according to actual needs, and the parameters may include: the size, quantity, position, function, etc. of the multiple independent pins. The electrical routing and layout of the substrate, as well as the size, thickness and position of each chip and circuit surface can also be designed according to actual needs.

[0072] Step 202: manufacturing the lead frame according to the parameters of the plurality of independent pins, and manufacturing the substrate according to the electrical routing and layout.

[0073] In the embodiment of the present invention, after determining the parameters of multiple independent pins in the lead frame and the electrical routing and layout of the substrate, the lead frame can be manufactured according to the parameters of the multiple independent pins, and the substrate can be manufactured according to the electrical routing and layout.

[0074] Step 203, attach the inverter power chip and the power factor correction power integrated circuit to the substrate through solder paste and complete sintering connection.

[0075] In an embodiment of the present invention, after a lead frame is manufactured according to the parameters of a plurality of independent pins and a substrate is manufactured according to electrical routing and layout, the inverter power chip and the power factor correction power integrated circuit can be mounted on the substrate through solder paste and then sintered and connected. The inverter power chip and the power factor correction power integrated circuit in the present invention can be selected according to actual needs.

[0076] In one embodiment, an inverter power chip and a power factor correction power integrated circuit are attached to a substrate via solder paste and sintered to form a connection, which may include: printing solder pastes of the same thickness on the surface of the substrate in areas corresponding to the inverter power chip and the power factor correction power integrated circuit, respectively; covering the inverter power chip and the power factor correction power integrated circuit on the solder paste; and sintering the inverter control chip and the power factor correction power integrated circuit under a preset temperature and a preset gas environment.

[0077] Specifically, the present invention can basically include a copper-clad ceramic substrate (DBC, Direct Bonded Copper on Ceramic Substrate), which is also a directly bonded copper-ceramic substrate. The directly bonded copper-ceramic substrate is mainly composed of a ceramic insulating layer and a metal copper layer bonded to its upper and lower surfaces (or one side). Ceramic materials are usually selected such as aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN) and other materials with high insulation, high thermal conductivity and good chemical stability; the metal copper layer provides excellent conductivity and processability, facilitating the subsequent circuit production and connection with other electronic components. In the present invention, the inverter power chip and the power factor correction power integrated circuit can be integrated on the direct bonded copper-ceramic substrate.

[0078] In the present invention, the areas corresponding to the inverter power chip and the power factor correction power integrated circuit can be first determined on the substrate, and then the surface of the area is printed with solder paste of the same thickness, and then the inverter power chip and the power factor correction power integrated circuit are covered on the solder paste, and then the inverter control chip and the power factor correction power integrated circuit are sintered and connected under a preset temperature and a preset gas environment.

[0079] Step 204, assembling the substrate and the lead frame after chip mounting by using solder paste.

[0080] In the embodiment of the present invention, after the inverter power chip and the power factor correction power integrated circuit are sintered and connected, the bonded substrate and the lead frame can be assembled by solder paste.

[0081] In one embodiment, assembling the post-chip-mounted substrate and the lead frame by using solder paste may include: placing the post-chip-mounted substrate on the lead frame; assembling the post-chip-mounted substrate and the lead frame by using solder paste; and cleaning the solder paste volatiles remaining on the lead frame.

[0082] Specifically, after sintering and connecting the inverter power chip and the power factor correction power integrated circuit, a post-chip substrate can be obtained, and then the post-chip substrate is placed on a lead frame for assembly, and solder paste is used to assemble the lead frame and the post-chip substrate in a reflow soldering device. After the lead frame and the post-chip substrate are assembled, the solder paste volatiles remaining on the lead frame are cleaned to prevent quality problems in the bonding of aluminum wires and gold wires.

[0083] Step 205, soldering the multiple driver chips to a preset area of ​​the substrate through silver glue, and connecting the inverter power chip, the multiple driver chips, the power factor correction power integrated circuit and the multiple independent pins to obtain an intelligent power module.

[0084] In an embodiment of the present invention, after the substrate after patching is assembled with the lead frame by solder paste, a plurality of driver chips can be soldered to a preset area of ​​the substrate by silver glue at a certain high temperature, and the inverter power chip, a plurality of driver chips, a power factor correction power integrated circuit and a plurality of independent pins can be connected according to the connection relationship in the above-mentioned intelligent power module structure to obtain an intelligent power module.

[0085] In one embodiment, the inverter power chip, multiple driver chips, power factor correction power integrated circuit and multiple independent pins in the intelligent power module are connected by gold wire and aluminum wire bonding.

[0086] In an embodiment of the present invention, the parameters of multiple independent pins in the lead frame, as well as the electrical routing and layout of the substrate are determined; the lead frame is manufactured according to the parameters of the multiple independent pins, and the substrate is manufactured according to the electrical routing and layout; the inverter power chip and the power factor correction power integrated circuit are pasted on the substrate through solder paste and sintered and connected; the pasted substrate and the lead frame are assembled through solder paste; multiple driver chips are welded to the preset area of ​​the substrate through silver glue, and the inverter power chip, multiple driver chips, the power factor correction power integrated circuit and multiple independent pins are connected to obtain an intelligent power module. By composite packaging the inverter power chip, the power factor correction power integrated circuit, the multiple driver chips and the multiple independent pins in the lead frame, the integration of the intelligent power module is improved, the alternating current can be directly connected to the intelligent power module, and the intelligent power module rectifies the alternating current into direct current for the intelligent power module to use, and only a small number of peripheral electronic components are needed to complete the coordination work, and at the same time, the length of the circuit is shortened, the stray inductance of the system is reduced, and the cost reduction and efficiency increase effect are achieved, which greatly improves the market competitiveness.

[0087] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0088] An embodiment of the present invention further provides a chip, wherein the chip includes the intelligent power module as described in any one of the above.

[0089] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0090] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0091] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0092] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0093] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0094] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0095] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0096] The above is a detailed introduction to an intelligent power module, a method for manufacturing an intelligent power module and a chip provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for general technicians in this field, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. An intelligent power module, characterized in that: include: A substrate, and an inverter power chip, a power factor correction power integrated circuit, a plurality of driver chips and a lead frame integrated on the substrate; the lead frame includes a plurality of independent pins; The inverter power chip is respectively connected to corresponding independent pins among the plurality of independent pins and the plurality of driving chips; The plurality of driving chips are respectively connected to corresponding independent pins among the plurality of independent pins; The power factor correction power integrated circuit is connected to corresponding independent pins among the plurality of independent pins respectively.

2. The intelligent power module according to claim 1, characterized in that: The inverter power chip comprises: A plurality of first insulated gate bipolar transistors, wherein the plurality of first insulated gate bipolar transistors are respectively connected to the plurality of driving chips; A plurality of first fast recovery diodes are respectively connected to corresponding first insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins.

3. The intelligent power module according to claim 2, characterized in that: The plurality of driving chips include: An upper bridge driving chip, wherein the upper bridge driving chip is respectively connected to corresponding insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins; The lower bridge driving chip is respectively connected to the corresponding insulated gate bipolar transistors among the plurality of first insulated gate bipolar transistors and the corresponding independent pins among the plurality of independent pins.

4. The intelligent power module according to claim 1, characterized in that: The power factor correction power integrated circuit comprises: a plurality of second insulated gate bipolar transistors, wherein the plurality of second insulated gate bipolar transistors are respectively connected to corresponding independent pins among the plurality of independent pins; A plurality of second fast recovery diodes are respectively connected to corresponding second fast recovery diodes in the plurality of second insulated gate bipolar transistors and corresponding independent pins in the plurality of independent pins.

5. The intelligent power module according to claim 2, characterized in that: The plurality of second insulated gate bipolar transistors include: first insulated gate bipolar transistors, each of which is connected to a corresponding independent pin among the plurality of independent pins; a second insulated gate bipolar transistor, wherein the second insulated gate bipolar transistor is respectively connected to corresponding independent pins among the plurality of independent pins; The plurality of second fast recovery diodes include: A first fast recovery diode, wherein the first fast recovery diode is connected to the first insulated gate bipolar transistor; The second fast recovery diode and the second insulated gate bipolar transistor are respectively connected to corresponding independent pins among the plurality of independent pins and the second insulated gate bipolar transistor.

6. The intelligent power module according to claim 1, characterized in that: The inverter power chip, the multiple driving chips, the power factor correction power integrated circuit and the multiple independent pins in the intelligent power module are connected by gold wire and aluminum wire bonding.

7. A method for manufacturing an intelligent power module, characterized in that: The method is applied to manufacture the intelligent power module according to any one of claims 1 to 6, and the method comprises: Determine the parameters of multiple independent pins in the lead frame, as well as the electrical routing and layout of the substrate; Manufacturing the lead frame according to the parameters of the plurality of independent pins, and manufacturing the substrate according to the electrical routing and layout; The inverter power chip and the power factor correction power integrated circuit are mounted on the substrate through solder paste and sintered to form a connection; Assembling the substrate and the lead frame after chip mounting by using solder paste; The multiple driver chips are welded to a preset area of ​​the substrate by silver glue, and the inverter power chip, the multiple driver chips, the power factor correction power integrated circuit and the multiple independent pins are connected to obtain an intelligent power module.

8. The method according to claim 7, characterized in that The inverter power chip and the power factor correction power integrated circuit are attached to the substrate through solder paste and sintered and connected, including: Printing solder pastes of the same thickness on the surface of the regions on the substrate corresponding to the inverter power chip and the power factor correction power integrated circuit respectively; Covering the inverter power chip and the power factor correction power integrated circuit on the solder paste; Under a preset temperature and a preset gas environment, the variable control chip and the power factor correction power integrated circuit are sintered and connected.

9. The method according to claim 7, characterized in that: The step of assembling the substrate and the lead frame after patching by using solder paste comprises: Placing the substrate after chip bonding on the lead frame; Assembling the substrate and the lead frame after chip mounting by using solder paste; Cleaning the solder paste volatiles remaining on the lead frame.

10. The method according to claim 7, characterized in that The inverter power chip, the multiple driving chips, the power factor correction power integrated circuit and the multiple independent pins in the intelligent power module are connected by gold wire and aluminum wire bonding.

11. The method according to claim 7, characterized in that The substrate comprises a copper-clad ceramic substrate.

12. A chip, characterized in that: The chip includes an intelligent power module as claimed in any one of claims 1 to 6.

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