Drive circuit of power semiconductor device, control method thereof, and electronic system

Abstract

The invention provides a driving circuit of a power semiconductor device, a control method thereof and an electronic system. The driving circuit of the power semiconductor device comprises a power supply module, a maintenance module, a signal detection module and a control module, two ends of the maintenance module are electrically connected with a gate pole and a cathode respectively, a first end of the signal detection module is electrically connected with an anode or the cathode, and a second end of the signal detection module is electrically connected with a first end of the control module. The second end of the control module is electrically connected with the power module, the third end of the control module is electrically connected with the maintaining module, the signal detection module is used for detecting electric signals of the power semiconductor device and outputting fault signals to the control module when the electric signals are larger than a signal threshold value, and the control module is used for responding to the fault signals. And a turn-off signal is output to the maintaining module. The driving circuit solves the technical problem of how to realize overcurrent protection of the power semiconductor device in the prior art.

Description

Technical Field

[0001] The present application relates to the field of circuits, and in particular, to a driving circuit of a power semiconductor device, a control method of the driving circuit of a power semiconductor device, and an electronic system. Background Art

[0002] Power semiconductor devices are widely used in industrial variable frequency speed regulation, new energy grid connection, rail transportation, ships, high voltage DC transmission and other fields. Taking thyristors as an example, the thyristor drive circuit in the prior art is as follows: Figure 1 As shown, the circuit mainly includes a power supply structure 10', a maintenance structure 20', an opening structure 30', a circuit control structure 40' and a shutoff structure 60', wherein the power supply structure 10' supplies power to the maintenance structure 20', the opening structure 30' and the shutoff structure 60', and one end of the maintenance structure 20', the opening structure 30' and the shutoff structure 60' is electrically connected to the gate of the thyristor 50', and the other end is electrically connected to the cathode of the thyristor 50'. The power semiconductor device cooperates with the capacitor and inductor and other components in the on-off module through forward bias and reverse bias voltage to achieve different on-off and off-off current pulses. Therefore, it is impossible to directly regulate the voltage during the shutdown process. Once the power semiconductor device itself exceeds its maximum shutoff current, it will cause the device to fail to shut down, and the power semiconductor device driven by the current source cannot form effective overcurrent protection in a very short time.

[0003] Therefore, there is an urgent need for a driving circuit for a power semiconductor device that can implement overcurrent protection for the power semiconductor device. Summary of the invention

[0004] The main purpose of the present application is to provide a driving circuit of a power semiconductor device, a control method of the driving circuit of a power semiconductor device, and an electronic system, so as to at least solve the problem of how to achieve overcurrent protection of power semiconductor devices in the prior art.

[0005] According to one aspect of the present application, a driving circuit of a power semiconductor device is provided, comprising a power module, a maintaining module, a signal detection module and a control module, wherein the power semiconductor device comprises a gate, a cathode and an anode, two ends of the maintaining module are respectively used to be electrically connected to the gate and the cathode, a first end of the signal detection module is electrically connected to the anode or the cathode, a second end of the signal detection module is electrically connected to a first end of the control module, a second end of the control module is electrically connected to the power module, a third end of the control module is electrically connected to the maintaining module, the signal detection module is used to detect an electrical signal of the power semiconductor device, and output a fault signal to the control module when the electrical signal is greater than a signal threshold, and the control module is used to respond to the fault signal and output a shutdown signal to the maintaining module.

[0006] Optionally, the signal detection module includes a first impedance, a second impedance, a third impedance, a fourth impedance, a first amplifier device and a second amplifier device, wherein the first end of the first impedance is the first end of the signal detection module, the second end of the first impedance, the first end of the first amplifier device, the first end of the third impedance and the first end of the fourth impedance are electrically connected, the first end of the second impedance is electrically connected to the ground end, the second end of the second impedance is electrically connected to the second end of the first amplifier device, the first end of the second amplifier device is used to input the signal threshold, the second end of the third impedance, the second end of the fourth impedance, the third end of the first amplifier device and the second end of the second amplifier device are electrically connected, and the third end of the second amplifier device is used to output the fault signal.

[0007] Optionally, the first impedance, the second impedance and the third impedance are resistors, the fourth impedance is a capacitor, the first amplifying device and the second amplifying device are operational amplifiers, the first end of the first amplifying device and the first end of the second amplifying device are non-inverting input ends of the operational amplifier, the second end of the first amplifying device and the second end of the second amplifying device are inverting input ends of the operational amplifier, and the third end of the first amplifying device and the third end of the second amplifying device are output ends of the operational amplifier.

[0008] Optionally, the signal detection module includes a fifth impedance, a sixth impedance, a seventh impedance, an eighth impedance, a ninth impedance, a tenth impedance, an eleventh impedance, a twelfth impedance, a third amplifying device, a fourth amplifying device and a fifth amplifying device, wherein the first end of the fifth impedance is the first end of the signal detection module, the second end of the fifth impedance, the first end of the third amplifying device, the first end of the seventh impedance and the first end of the eighth impedance are electrically connected, the first end of the sixth impedance is electrically connected to the ground terminal, the second end of the sixth impedance is electrically connected to the second end of the third amplifying device, the second end of the seventh impedance, the second end of the eighth impedance, the The third end of the third amplifying device is electrically connected to the first end of the ninth impedance, the second end of the ninth impedance, the second end of the fourth amplifying device, the first end of the eleventh impedance and the first end of the twelfth impedance are electrically connected, the first end of the tenth impedance is electrically connected to the ground, the second end of the tenth impedance is electrically connected to the first end of the fourth amplifying device, the second end of the eleventh impedance, the second end of the twelfth impedance, the third end of the fourth amplifying device and the first end of the fifth amplifying device are electrically connected, the second end of the fifth amplifying device is used to input the signal threshold, and the third end of the fifth amplifying device is used to output the fault signal.

[0009] Optionally, the fifth impedance, the sixth impedance, the seventh impedance, the tenth impedance and the eleventh impedance are resistors, the eighth impedance, the ninth impedance and the twelfth impedance are capacitors, the third amplifying device, the fourth amplifying device and the fifth amplifying device are operational amplifiers, the first end of the third amplifying device, the first end of the fourth amplifying device and the first end of the fifth amplifying device are non-inverting input terminals of the operational amplifier, the second end of the third amplifying device, the second end of the fourth amplifying device and the second end of the fifth amplifying device are inverting input terminals of the operational amplifier, and the third end of the third amplifying device, the third end of the fourth amplifying device and the third end of the fifth amplifying device are output terminals of the operational amplifier.

[0010] Optionally, the control module includes a switch device, a first end of the switch device is the first end of the control module, a second end of the switch device is the second end of the control module, and a third end of the switch device is the third end of the control module.

[0011] Optionally, the switch device is a MOS tube, the first end of the switch device is the gate of the MOS tube, the second end of the switch device is the source of the MOS tube, and the third end of the switch device is the drain of the MOS tube.

[0012] Optionally, the electrical signal is a current signal, and the first end of the signal detection module is electrically connected to the anode or cathode of the power semiconductor device.

[0013] Optionally, the electrical signal is a voltage signal, and the first end of the signal detection module is electrically connected to the anode of the power semiconductor device.

[0014] According to another aspect of the present application, a control method for a driving circuit of any one of the power semiconductor devices is provided, comprising: the signal detection module detects the electrical signal of the power semiconductor device; determines whether the electrical signal is greater than the signal threshold; when the electrical signal is greater than the signal threshold, the signal detection module outputs a fault signal to the control module, and the control module outputs a shutdown signal to the maintenance module in response to the fault signal to shut down the maintenance module; when the electrical signal is less than or equal to the signal threshold, the maintenance module operates normally.

[0015] According to another aspect of the present application, an electronic system is provided, comprising a power semiconductor device and a driving circuit of any one of the power semiconductor devices, wherein the driving circuit of the power semiconductor device is used to drive the power semiconductor device.

[0016] Optionally, the power semiconductor device is one of IGBT, GTO, SGTO, ETO, Thyristor, GCT, IGCT and a hybrid power semiconductor device.

[0017] By applying the technical solution of the present application, a signal detection module and a control module are added to the existing driving circuit of the power semiconductor device. The detection module detects the electrical signal of the power semiconductor device, and judges whether an overcurrent phenomenon will occur based on the size relationship between the electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the maintenance module to shut down, and then shut down the maintenance current, thereby reducing the overcurrent flowing through the device, and finally achieving reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of power semiconductor devices in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0019] Figure 1 A circuit diagram of a driving circuit of a power semiconductor device in the prior art is shown;

[0020] Figure 2 A circuit diagram of a driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0021] Figure 3 A circuit diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application is shown;

[0022] Figure 4 A circuit diagram of a signal detection module provided in an embodiment of the present application is shown;

[0023] Figure 5 A circuit diagram of another signal detection module provided in an embodiment of the present application is shown;

[0024] Figure 6 A circuit diagram of a driving circuit of another power semiconductor device provided in an embodiment of the present application is shown;

[0025] Figure 7 A schematic flow chart of a driving method for a driving circuit of a power semiconductor device provided in an embodiment of the present application is shown.

[0026] The above drawings include the following reference numerals:

[0027] 10`, power supply structure; 20`, maintenance structure; 30`, opening structure; 40`, circuit control structure; 50`, thyristor; 60`, closing structure;

[0028] 10. Power supply module; 20. Maintaining module; 30. Signal detection module; 40. Control module; 50. Power semiconductor device; 301. First impedance; 302. Second impedance; 303. Third impedance; 304. Fourth impedance; 305. First amplifier device; 306. Second amplifier device; 307. Fifth impedance; 308. Sixth impedance; 309. Seventh impedance; 310. Eighth impedance; 311. Ninth impedance; 312. Tenth impedance; 313. Eleventh impedance; 314. Twelfth impedance; 315. Third amplifier device; 316. Fourth amplifier device; 317. Fifth amplifier device; 401. Switch device. DETAILED DESCRIPTION

[0029] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0030] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0032] As introduced in the background technology, power semiconductor devices in the prior art are prone to overcurrent. To solve the above problem, the embodiments of the present application provide a driving circuit of a power semiconductor device, a control method of the driving circuit of a power semiconductor device, and an electronic system.

[0033] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0034] Figure 2 , Figure 3 as well as Figure 6 is a circuit diagram of a driving circuit of a power semiconductor device according to an embodiment of the present application. Figure 2 , Figure 3 as well as Figure 6 As shown, it includes a power module 10, a maintenance module 20, a signal detection module 30 and a control module 40, wherein the power semiconductor device 50 includes a gate, a cathode and an anode, the two ends of the above-mentioned maintenance module 20 are respectively used to be electrically connected to the above-mentioned gate and the above-mentioned cathode, the first end of the above-mentioned signal detection module 30 is electrically connected to the above-mentioned anode or the above-mentioned cathode, the second end of the above-mentioned signal detection module 30 is electrically connected to the first end of the above-mentioned control module 40, the second end of the above-mentioned control module 40 is electrically connected to the above-mentioned power module 10, and the third end of the above-mentioned control module 40 is electrically connected to the above-mentioned maintenance module 20. The above-mentioned signal detection module 30 is used to detect the electrical signal of the above-mentioned power semiconductor device 50, and output a fault signal to the above-mentioned control module 40 when the above-mentioned electrical signal is greater than the signal threshold value, and the above-mentioned control module 40 is used to respond to the above-mentioned fault signal and output a shutdown signal to the above-mentioned maintenance module 20.

[0035] Specifically, the driving circuit of the power semiconductor device refers to a circuit system that provides appropriate voltage and current for the power semiconductor device to achieve precise control of its switching state. The power module is used to supply power to the maintenance module and the control module respectively. The maintenance module is used to provide a maintenance current to the power semiconductor. The maintenance module may include a switching device and an inductor element. The electrical signal detected by the signal detection module may be a voltage signal or a current signal. In practical applications, a multi-stage amplification circuit or a filtering circuit may be set in the signal detection module to improve the sensitivity of the electrical signal detection and reduce the false alarm rate. The control module is used to control the maintenance module according to whether a fault signal is received.

[0036] When the power semiconductor device is conducting current normally, it is necessary to continuously inject gate current through the gate to maintain the bipolar forward gain inside the device. The gate current is provided by the maintenance module. When the gate injection current is removed, the gain effect inside the device will decay rapidly. At this time, the device will enter the shutdown state and the current flowing through the device will begin to decrease. Based on this principle, by collecting the electrical signal of the semiconductor power device and judging whether the device has overcurrent based on the relationship between the electrical signal and the signal threshold, a fault signal is sent to the control module when overcurrent occurs, and the control module sends a shutdown signal to the maintenance module. At this time, the de-gain stage is entered, and the current of the power semiconductor device begins to decrease. When it is reduced to the gate-turnoff current, the process is repeated and the maintenance current is input to the gate. It should be noted that Figure 2 The first end of the signal detection module 30 is electrically connected to the anode. Figure 3 The first end of the signal detection module 30 is electrically connected to the cathode. The signal threshold may be the maximum turn-off current of the power semiconductor device.

[0037] Through this embodiment, a signal detection module and a control module are added to the existing driving circuit of the power semiconductor device. The detection module detects the electrical signal of the power semiconductor device, and judges whether an overcurrent phenomenon will occur based on the size relationship between the electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the maintenance module to shut down, thereby shutting down the maintenance current, causing the power semiconductor device to enter a de-gain stage, thereby reducing the current flowing through the device to below the maximum shutdown current, and finally achieving reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0038] In the specific implementation process, Figure 4As shown, the signal detection module includes a first impedance 301, a second impedance 302, a third impedance 303, a fourth impedance 304, a first amplifier 305 and a second amplifier 306, wherein the first end of the first impedance 301 is the first end of the signal detection module, the second end of the first impedance 301, the first end of the first amplifier 305, the first end of the third impedance 303 and the first end of the fourth impedance 304 are electrically connected, the first end of the second impedance 302 is electrically connected to the ground terminal, the second end of the second impedance 302 is electrically connected to the second end of the first amplifier 305, the first end of the second amplifier 306 is used to input the signal threshold, the second end of the third impedance 303, the second end of the fourth impedance 304, the third end of the first amplifier 305 and the second end of the second amplifier 306 are electrically connected, and the third end of the second amplifier 306 is used to output the fault signal. The signal detection module can further improve the accuracy and stability of signal processing.

[0039] Specifically, the signal detection module implements signal detection and post-processing through a differential circuit, which can effectively suppress common-mode signals, that is, the gain of the same signal (such as noise or interference) at both input ends is low or even completely eliminated, which makes it excellent in anti-interference.

[0040] In order to further simplify the above signal detection module, Figure 4 As shown, the first impedance 301, the second impedance 302 and the third impedance 303 of the present application are resistors, the fourth impedance 304 is a capacitor, the first amplifying device 305 and the second amplifying device 306 are operational amplifiers, the first end of the first amplifying device 305 and the first end of the second amplifying device 306 are non-inverting input ends of the operational amplifier, the second end of the first amplifying device 305 and the second end of the second amplifying device 306 are inverting input ends of the operational amplifier, and the third end of the first amplifying device 305 and the third end of the second amplifying device 306 are output ends of the operational amplifier.

[0041] In practical applications, the resistance values ​​of the first impedance, the second impedance and the third impedance can be set according to actual conditions, and the capacitance value of the fourth impedance can be set according to actual conditions. In addition, the specific type of the operational amplifier can also be selected according to actual needs.

[0042] In other embodiments, Figure 5As shown, the signal detection module includes a fifth impedance 307, a sixth impedance 308, a seventh impedance 309, an eighth impedance 310, a ninth impedance 311, a tenth impedance 312, an eleventh impedance 313, a twelfth impedance 314, a third amplifying device 315, a fourth amplifying device 316 and a fifth amplifying device 317, wherein a first end of the fifth impedance 307 is a first end of the signal detection module, a second end of the fifth impedance 307, a first end of the third amplifying device 315, a first end of the seventh impedance 309 and a first end of the eighth impedance 310 are electrically connected, a first end of the sixth impedance 308 is electrically connected to a ground terminal, a second end of the sixth impedance 308 is electrically connected to a second end of the third amplifying device 315, a second end of the seventh impedance 309, a first end of the eighth impedance 310 and a ground terminal. The second end of the above-mentioned first amplifying device 310, the third end of the above-mentioned third amplifying device 315 and the first end of the above-mentioned ninth impedance 311 are electrically connected, the second end of the above-mentioned ninth impedance 311, the second end of the above-mentioned fourth amplifying device 316, the first end of the above-mentioned eleventh impedance 313 and the first end of the above-mentioned twelfth impedance 314 are electrically connected, the first end of the above-mentioned tenth impedance 312 is electrically connected to the ground terminal, the second end of the above-mentioned tenth impedance 312 is electrically connected to the first end of the above-mentioned fourth amplifying device 316, the second end of the above-mentioned eleventh impedance 313, the second end of the above-mentioned twelfth impedance 314, the third end of the above-mentioned fourth amplifying device 316 and the first end of the above-mentioned fifth amplifying device 317 are electrically connected, the second end of the above-mentioned fifth amplifying device 317 is used to input the above-mentioned signal threshold, and the third end of the above-mentioned fifth amplifying device 317 is used to output the above-mentioned fault signal. The arrangement of the above-mentioned signal detection module can further quickly respond to signal changes and waveform changes.

[0043] Specifically, the signal detection module realizes signal detection and post-processing through a differential circuit and a differential circuit. The seventh impedance, the eighth impedance and the third amplifier device constitute a differential circuit, and the eleventh impedance, the twelfth impedance and the fourth amplifier device constitute a differential circuit. By performing differential operations on the input signal, a small change in the input signal can be quickly converted into an output signal. In addition, the differential circuit responds faster to high-frequency signals and can capture rapid changes in signals. The differential comparison circuit structure is relatively simple, and efficient signal processing can be achieved by reasonably selecting resistance and capacitance parameters.

[0044] In some embodiments, Figure 5As shown, the fifth impedance 307, the sixth impedance 308, the seventh impedance 309, the tenth impedance 312 and the eleventh impedance 313 are resistors, the eighth impedance 310, the ninth impedance 311 and the twelfth impedance 314 are capacitors, the third amplifying device 315, the fourth amplifying device 316 and the fifth amplifying device 317 are operational amplifiers, a first end of the third amplifying device 315, a first end of the fourth amplifying device 316 and a first end of the fifth amplifying device 317 are non-inverting input ends of the operational amplifier, a second end of the third amplifying device 315, a second end of the fourth amplifying device 316 and a second end of the fifth amplifying device 317 are inverting input ends of the operational amplifier, and a third end of the third amplifying device 315, a third end of the fourth amplifying device 316 and a third end of the fifth amplifying device 317 are output ends of the operational amplifier. The selection of the fifth impedance, the sixth impedance, the seventh impedance, the eighth impedance, the ninth impedance, the tenth impedance, the eleventh impedance, the twelfth impedance, the third amplifying device, the fourth amplifying device and the fifth amplifying device can further simplify the signal detection module.

[0045] Specifically, the resistance values ​​of the fifth impedance, the sixth impedance, the seventh impedance, the tenth impedance and the eleventh impedance can be set according to actual conditions, and the capacitance values ​​of the eighth impedance, the ninth impedance and the twelfth impedance can be set according to actual conditions. In addition, the specific type of the operational amplifier can also be selected according to actual needs.

[0046] like Figure 6 As shown, the control module 40 includes a switch device 401, a first end of the switch device 401 is a first end of the control module 40, a second end of the switch device 401 is a second end of the control module 40, and a third end of the switch device 401 is a third end of the control module 40. The above configuration can further simplify the control module.

[0047] In some embodiments, Figure 6 As shown, the switch device 401 is a MOS tube, the first end of the switch device 401 is the gate of the MOS tube, the second end of the switch device 401 is the source of the MOS tube, and the third end of the switch device 401 is the drain of the MOS tube. The above configuration can further simplify the control module.

[0048] Specifically, the connection modes of the source and the drain of the MOS tube can be exchanged.

[0049] The electrical signal is a current signal, and the first end of the signal detection module is electrically connected to the anode or cathode of the power semiconductor device. The above arrangement can further obtain an accurate current signal.

[0050] Specifically, when the electrical signal is a current signal and the first end of the signal detection module is electrically connected to the anode, the main purpose of the measurement is to measure the total current of the power semiconductor device. The anode current of the power semiconductor device mainly reflects the total current of the external characteristics, but in the shutdown transient, it cannot reflect the current of the device shutdown transient (the shutdown transient anode current is the sum of the cathode current and the gate current). In practical applications, since the driver of the power semiconductor device is placed on the cathode side of the device, an additional current sensor can be set at the anode of the above-mentioned power semiconductor device to obtain the above-mentioned current signal. When the electrical signal is a current signal and the first end of the signal detection module is electrically connected to the cathode, since the driver of the power semiconductor device is placed on the cathode side of the device, the signal detection module can be directly integrated with the gate driver.

[0051] The electrical signal is a voltage signal, and the first end of the signal detection module is electrically connected to the anode of the power semiconductor device. The above arrangement can further obtain an accurate voltage signal.

[0052] In practical applications, some existing power semiconductor device drivers are equipped with anode and cathode voltage measurement modules. Therefore, the driver can be directly improved on the existing driver to obtain the above-mentioned signal detection module.

[0053] The embodiment of the present application also provides a control method for a driving circuit of a power semiconductor device. The control method for a driving circuit of a power semiconductor device provided in the embodiment of the present application is introduced below. Figure 7 FIG. 1 is a flow chart of a control method for a driving circuit of a power semiconductor device according to an embodiment of the present application. Figure 7 As shown, the method includes:

[0054] Step S701, the signal detection module detects the electrical signal of the power semiconductor device;

[0055] Step S702, determining whether the electrical signal is greater than the signal threshold;

[0056] Step S703, when the electrical signal is greater than the signal threshold, the signal detection module outputs a fault signal to the control module, and the control module outputs a shut-off signal to the maintenance module in response to the fault signal to shut down the maintenance module;

[0057] Step S704: when the electrical signal is less than or equal to the signal threshold, the maintaining module operates normally.

[0058] Specifically, when the power semiconductor device is conducting current normally, it is necessary to continuously inject gate current through the gate to maintain the common base forward gain inside the device. The gate current is provided by the maintenance module. When the gate injection current is removed, the gain effect inside the device will decay rapidly. At this time, the device will enter the off state and the current inside the device will begin to decrease. Based on this principle, by collecting the electrical signal of the semiconductor power device and judging whether the device has overcurrent based on the magnitude relationship between the electrical signal and the signal threshold, a fault signal is sent to the control module when overcurrent occurs, and the control module sends a shutdown signal to the maintenance module. At this time, the gain removal stage is entered, and the current of the power semiconductor device begins to decrease. When it decreases to the gate turn-off current, the process is repeated and the maintenance current is input to the gate.

[0059] Through this embodiment, a signal detection module and a control module are added to the existing driving circuit of the power semiconductor device. The detection module detects the electrical signal of the power semiconductor device, and judges whether an overcurrent phenomenon will occur based on the size relationship between the electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the maintenance module to shut down, thereby shutting down the maintenance current, causing the power semiconductor device to enter a de-gain stage, thereby reducing the current flowing through the device to below the maximum shutdown current, and finally achieving reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0060] An embodiment of the present invention provides an electronic system, including a power semiconductor device and a driving circuit of any one of the above-mentioned power semiconductor devices, wherein the driving circuit of the above-mentioned power semiconductor device is used to drive the above-mentioned power semiconductor device.

[0061] In some embodiments, the power semiconductor device is one of IGBT, GTO, SGTO, ETO, Thyristor, GCT, IGCT and a hybrid power semiconductor device.

[0062] Specifically, IGBT is a composite power device that combines the advantages of MOSFET's high input impedance and BJT's low on-state voltage drop. It is driven by MOSFET to form a PNP bipolar transistor with a low on-state voltage drop. IGBT has the characteristics of high voltage and high current carrying capacity, fast switching speed and low on-state voltage drop. GTO is a special thyristor that is turned off by applying a negative pulse to the gate. GTO has the advantages of high voltage and high current resistance. SGTO is an improved version of GTO, with a symmetrical anode and cathode structure, which can achieve bidirectional conduction and shutdown. It has higher shutdown capability and faster shutdown speed than GTO. ETO is an emitter-turned thyristor that combines the high withstand voltage and high current capability of thyristors with the control advantages of MOS gates. ETO has high withstand voltage and high current capability, is easy to control, and has a fast switching speed. Thyristor is a semi-controlled device that is turned on by gate triggering, but cannot be actively turned off. It can only be turned off naturally when the current drops to zero. Thyristor has the characteristics of high voltage and high current resistance. GCT is a gate-commutated thyristor that combines the high voltage resistance and high current capability of thyristor with the advantages of gate control. GCT has high voltage resistance and high current capability, and low conduction loss. IGCT is a device that integrates GTO chip with anti-parallel diode and gate drive circuit. It combines the high voltage resistance and low conduction loss characteristics of GTO with the control capability of MOSFET. IGCT has the characteristics of high voltage resistance, high current and low conduction loss. Hybrid power semiconductor devices include the scenarios where the above-mentioned power semiconductor devices are applied in parallel in pairs.

[0063] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0064] 1) The driving circuit of the power semiconductor device of the present application adds a signal detection module and a control module to the existing driving circuit of the power semiconductor device. The detection module detects the electrical signal of the power semiconductor device, and judges whether an overcurrent phenomenon will occur based on the size relationship between the electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the maintenance module to shut down, and then shut down the maintenance current, thereby reducing the overcurrent flowing through the device, and finally realizing reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of power semiconductor devices in the prior art.

[0065] 2) The control method of the driving circuit of the power semiconductor device of the present application, the driving circuit of the power semiconductor device adds a signal detection module and a control module to the existing driving circuit of the power semiconductor device, the electrical signal of the power semiconductor device is detected by the detection module, and whether an overcurrent phenomenon will occur is judged based on the size relationship between the electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the maintenance module to shut down, and then shut down the maintenance current, thereby reducing the overcurrent flowing through the device, and finally realizing reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of power semiconductor devices in the prior art.

[0066] 3) The electronic system of the present application includes a power semiconductor device and a driving circuit of the power semiconductor device. The driving circuit of the power semiconductor device adds a signal detection module and a control module to the existing driving circuit of the power semiconductor device. The detection module detects the electrical signal of the power semiconductor device, and judges whether an overcurrent phenomenon will occur based on the relationship between the electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the maintenance module to shut down, and then shut down the maintenance current, thereby reducing the overcurrent flowing through the device, and finally realizing reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of power semiconductor devices in the prior art.

[0067] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A driving circuit for a power semiconductor device, characterized in that: It includes a power supply module, a maintenance module, a signal detection module and a control module. The power semiconductor device includes a gate, a cathode and an anode. The two ends of the maintenance module are respectively used to electrically connect to the gate and the cathode. The first end of the signal detection module is electrically connected to the anode or the cathode. The second end of the signal detection module is electrically connected to the first end of the control module. The second end of the control module is electrically connected to the power supply module. The third end of the control module is electrically connected to the maintenance module. The signal detection module is used to detect the electrical signal of the power semiconductor device and output a fault signal to the control module when the electrical signal is greater than a signal threshold. The control module is used to respond to the fault signal and output a shutdown signal to the maintenance module.

2. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The signal detection module includes a first impedance, a second impedance, a third impedance, a fourth impedance, a first amplifier device and a second amplifier device. The first end of the first impedance is the first end of the signal detection module, the second end of the first impedance, the first end of the first amplifier device, the first end of the third impedance and the first end of the fourth impedance are electrically connected, the first end of the second impedance is electrically connected to the ground end, the second end of the second impedance is electrically connected to the second end of the first amplifier device, the first end of the second amplifier device is used to input the signal threshold, the second end of the third impedance, the second end of the fourth impedance, the third end of the first amplifier device and the second end of the second amplifier device are electrically connected, and the third end of the second amplifier device is used to output the fault signal.

3. The driving circuit of the power semiconductor device according to claim 2, characterized in that: The first impedance, the second impedance and the third impedance are resistors, the fourth impedance is a capacitor, the first amplifying device and the second amplifying device are operational amplifiers, the first end of the first amplifying device and the first end of the second amplifying device are non-inverting input ends of the operational amplifier, the second end of the first amplifying device and the second end of the second amplifying device are inverting input ends of the operational amplifier, and the third end of the first amplifying device and the third end of the second amplifying device are output ends of the operational amplifier.

4. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The signal detection module includes a fifth impedance, a sixth impedance, a seventh impedance, an eighth impedance, a ninth impedance, a tenth impedance, an eleventh impedance, a twelfth impedance, a third amplifier, a fourth amplifier and a fifth amplifier. The first end of the fifth impedance is the first end of the signal detection module, the second end of the fifth impedance, the first end of the third amplifier, the first end of the seventh impedance and the first end of the eighth impedance are electrically connected, the first end of the sixth impedance is electrically connected to the ground, the second end of the sixth impedance is electrically connected to the second end of the third amplifier, the second end of the seventh impedance, the second end of the eighth impedance, the third amplifier The third end of the amplifying device and the first end of the ninth impedance are electrically connected, the second end of the ninth impedance, the second end of the fourth amplifying device, the first end of the eleventh impedance and the first end of the twelfth impedance are electrically connected, the first end of the tenth impedance is electrically connected to the ground terminal, the second end of the tenth impedance is electrically connected to the first end of the fourth amplifying device, the second end of the eleventh impedance, the second end of the twelfth impedance, the third end of the fourth amplifying device and the first end of the fifth amplifying device are electrically connected, the second end of the fifth amplifying device is used to input the signal threshold, and the third end of the fifth amplifying device is used to output the fault signal.

5. The driving circuit of the power semiconductor device according to claim 4, characterized in that: The fifth impedance, the sixth impedance, the seventh impedance, the tenth impedance and the eleventh impedance are resistors, the eighth impedance, the ninth impedance and the twelfth impedance are capacitors, the third amplifying device, the fourth amplifying device and the fifth amplifying device are operational amplifiers, the first end of the third amplifying device, the first end of the fourth amplifying device and the first end of the fifth amplifying device are non-inverting input ends of the operational amplifier, the second end of the third amplifying device, the second end of the fourth amplifying device and the second end of the fifth amplifying device are inverting input ends of the operational amplifier, and the third end of the third amplifying device, the third end of the fourth amplifying device and the third end of the fifth amplifying device are output ends of the operational amplifier.

6. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The control module includes a switch device, a first end of the switch device is a first end of the control module, a second end of the switch device is a second end of the control module, and a third end of the switch device is a third end of the control module.

7. The driving circuit of the power semiconductor device according to claim 6, characterized in that: The switch device is a MOS tube, the first end of the switch device is the gate of the MOS tube, the second end of the switch device is the source of the MOS tube, and the third end of the switch device is the drain of the MOS tube.

8. The driving circuit of a power semiconductor device according to claim 1, characterized in that: The electrical signal is a current signal, and the first end of the signal detection module is electrically connected to the anode or cathode of the power semiconductor device.

9. The driving circuit of a power semiconductor device according to claim 1, characterized in that: The electrical signal is a voltage signal, and the first end of the signal detection module is electrically connected to the anode of the power semiconductor device.

10. A method for controlling a driving circuit of a power semiconductor device, characterized in that: The method applied to the driving circuit of the power semiconductor device according to any one of claims 1 to 9 comprises: The signal detection module detects the electrical signal of the power semiconductor device; determining whether the electrical signal is greater than the signal threshold; In the case where the electrical signal is greater than the signal threshold, the signal detection module outputs a fault signal to the control module, and the control module outputs a shutdown signal to the maintenance module in response to the fault signal to shut down the maintenance module; When the electrical signal is less than or equal to the signal threshold, the maintaining module operates normally.

11. An electronic system, characterized in that: A power semiconductor device and a driving circuit for the power semiconductor device according to any one of claims 1 to 9, wherein the driving circuit for the power semiconductor device is used to drive the power semiconductor device.

12. The electronic system according to claim 11, characterized in that: The power semiconductor device is one of IGBT, GTO, SGTO, ETO, Thyristor, GCT, IGCT and a hybrid power semiconductor device.

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