Doherty amplifier

Abstract

A Doherty amplifier suppresses deterioration of output characteristics. The semiconductor device includes: a first terminal connected to an output terminal of a first phase amplifier of a carrier amplifier; a second terminal connected to an output terminal of a second phase amplifier of the carrier amplifier; a third terminal connected to the output terminal of the first phase amplifier of the peak amplifier; a fourth terminal connected to the output terminal of the second phase amplifier of the peak amplifier; a fifth terminal connected to the output terminal of the first phase amplifier of the peak amplifier; and a sixth terminal connected to the output terminal of the second phase amplifier of the peak amplifier. The Doherty amplifier includes: a first metal member connecting one end of a first wiring and a first terminal; a second metal member connecting one end of the second wiring and the second terminal; a third metal member connecting the other end of the first wiring and the fifth terminal; and a fourth metal member connecting the other end of the second wiring and the sixth terminal.

Description

Technical Field

[0001] The present disclosure relates to Doherty amplifiers. Background Art

[0002] As a high-efficiency power amplifier, a Doherty amplifier is known. A Doherty amplifier is generally a structure in which a carrier amplifier and a peak amplifier are connected in parallel. The carrier amplifier operates regardless of the power level of the input signal, and the peak amplifier is cut off when the power level of the input signal is low, and is turned on when the power level of the input signal is high. In this structure, when the power level of the high-frequency input signal is high, the carrier amplifier operates while maintaining saturation at a saturated output power level. As a result, the Doherty amplifier can improve efficiency compared to a normal power amplifier.

[0003] Patent Document 1 listed below describes a Doherty power amplifier in which a carrier amplifier and a peak amplifier are differential amplifiers and a phase shifter is provided between the output of the carrier amplifier and the output of the peak amplifier.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2022-90557

[0007] A case of realizing the Doherty amplifier described in Patent Document 1 is studied. For example, a carrier amplifier and a peak amplifier are formed on a semiconductor device (IC: Integrated Circuit). Furthermore, the semiconductor device is mounted on a printed wiring board (PWB: Printed Wiring Board). Thus, the Doherty amplifier described in Patent Document 1 can be realized as a printed circuit board (PCB: Printed Circuit Board).

[0008] However, when the synthesis point of the carrier amplifier output and the peak amplifier output is set inside the PWB, the distance between the peak amplifier output and the synthesis point becomes longer, and the inductance value between the peak amplifier output and the synthesis point increases, so the output characteristics deteriorate. Summary of the invention

[0009] Problem that the invention aims to solve

[0010] The present disclosure has been made in view of the above, and an object of the present disclosure is to suppress degradation of the output characteristics of the Doherty amplifier.

[0011] Technical solutions to solve problems

[0012] A Doherty amplifier according to one aspect of the present disclosure includes: a semiconductor device having a carrier amplifier and a peak amplifier as differential amplifiers respectively including a first phase amplifier and a second phase amplifier; and a printed wiring board having a balun that synthesizes an output signal of the carrier amplifier and an output signal of the peak amplifier. The semiconductor device includes: a first terminal electrically connected to an output terminal of the first phase amplifier of the carrier amplifier; a second terminal electrically connected to an output terminal of the second phase amplifier of the carrier amplifier; a third terminal electrically connected to an output terminal of the first phase amplifier of the peak amplifier and to one end of the balun; a fourth terminal electrically connected to an output terminal of the second phase amplifier of the peak amplifier and to the other end of the balun; a fifth terminal electrically connected to an output terminal of the first phase amplifier of the peak amplifier; and a sixth terminal electrically connected to an output terminal of the second phase amplifier of the peak amplifier. The printed wiring board includes a first wiring and a second wiring. The Doherty amplifier includes: a first metal component electrically connecting one end of a first wiring and a first terminal; a second metal component electrically connecting one end of a second wiring and a second terminal; a third metal component electrically connecting the other end of the first wiring and a fifth terminal; and a fourth metal component electrically connecting the other end of the second wiring and a sixth terminal.

[0013] Effects of the Invention

[0014] According to the present disclosure, it is possible to suppress degradation of the output characteristics of the Doherty amplifier. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 1 is a diagram showing a circuit configuration common to the Doherty amplifiers of the embodiment and the comparative example.

[0016] Figure 2 : is a figure which shows the layout of the Doherty amplifier of a comparative example.

[0017] Figure 3 This is a diagram showing the layout of the Doherty amplifier according to the first embodiment.

[0018] Figure 4 This is a diagram showing the layout of the Doherty amplifier according to the first embodiment.

[0019] Figure 5 It is a diagram showing the layout of the Doherty amplifier according to the second embodiment.

[0020] Figure 6 It is a diagram showing the layout of the Doherty amplifier according to the second embodiment.

[0021] Figure 7 This is a diagram showing the layout of the Doherty amplifier according to the third embodiment.

[0022] Figure 8 This is a diagram showing the layout of the Doherty amplifier according to the third embodiment.

[0023] Fig. 9 It is a diagram showing the layout of the Doherty amplifier according to the fourth embodiment.

[0024] Fig.10 This is a diagram showing the layout of the Doherty amplifier according to the fourth embodiment.

[0025] Fig.11 This is a diagram showing the layout of the Doherty amplifier according to the fifth embodiment.

[0026] Fig.12 This is a diagram showing the layout of the Doherty amplifier according to the fifth embodiment.

[0027] Fig.13 This is a diagram showing the layout of the Doherty amplifier according to the sixth embodiment.

[0028] Fig.14 This is a diagram showing the layout of the Doherty amplifier according to the sixth embodiment.

[0029] Description of Reference Numerals

[0030] 1, 1A, 1B, 1C, 1D, 1E, 1F, 200 Doherty amplifier

[0031] 2 Carrier Amplifier

[0032] 2-1, 3-1 Phase 1 amplifier

[0033] 2-2, 3-2 Phase 2 Amplifier

[0034] 3 Peak Amplifier

[0035] 4 Phaser

[0036] 5Balanced-unbalanced converter

[0037] 11.12 Inductor

[0038] 13. Capacitor

[0039] 211st winding

[0040] 22 2nd winding

[0041] 31, 31A, 31B, 31C, 31D, 31E, 31F semiconductor devices

[0042] 32, 32A, 32B, 32C, 32D, 32E, 32F printed wiring boards

[0043] 111, 112, 113, 114, 115, 116 Metal Department

[0044] 121, 122, 123, 124, 125, 126 bumps

[0045] 131, 132, 133, 134 vias

[0046] 141, 142 wiring

[0047] 151, 152, 153, 154, 155, 156, 157, 158, 159, 160 wires

[0048] Electrodes 161, 162, 163, 164, 165, 166

[0049] Q1, Q2, Q3, Q4 transistors. DETAILED DESCRIPTION

[0050] Hereinafter, the embodiments of the present disclosure will be described in detail based on the accompanying drawings. In addition, the present invention is not limited to the embodiments. Each embodiment is an example, and it is self-evident that partial replacement or combination of the structures shown in different embodiments can be performed. After the second embodiment, the description of the matters common to the first embodiment is omitted, and only the differences are described. In particular, the same effects brought about by the same structure are not mentioned one by one in each embodiment.

[0051] <First embodiment>

[0052] (Circuit Configuration Common to Embodiment and Comparative Example)

[0053] Figure 1 1 is a diagram showing a circuit configuration common to the Doherty amplifiers of the embodiment and the comparative example.

[0054] The Doherty amplifier 1 is a differential amplifier. The Doherty amplifier 1 inputs a first-phase high-frequency signal RFin1-1 and a second-phase high-frequency signal RFin1-2 as a first differential signal. In addition, the Doherty amplifier 1 inputs a first-phase high-frequency signal RFin2-1 and a second-phase high-frequency signal RFin2-2 as a second differential signal. The Doherty amplifier 1 amplifies the first-phase high-frequency signal RFin1-1 to the second-phase high-frequency signal RFin2-2, and outputs a high-frequency signal RFout.

[0055] The Doherty amplifier 1 includes a carrier amplifier 2 , a peak amplifier 3 , a phase shifter 4 and a balun 5 .

[0056] The carrier amplifier 2 and the peak amplifier 3 are differential amplifiers. The carrier amplifier 2 includes a first phase amplifier 2-1 and a second phase amplifier 2-2. The peak amplifier 3 includes a first phase amplifier 3-1 and a second phase amplifier 3-2.

[0057] In the embodiment, the first phase is a negative phase (negative polarity) and the second phase is a positive phase (positive polarity), but the present disclosure is not limited thereto. The first phase may be a positive phase and the second phase may be a negative phase.

[0058] The first phase amplifier 2-1 of the carrier amplifier 2 includes a transistor Q1. The emitter of the transistor Q1 is electrically connected to a reference potential. The reference potential may be exemplified by a ground potential, but the present disclosure is not limited thereto. A first phase high frequency signal RFin1-1 and a base bias current (not shown) are input to the base of the transistor Q1. The collector of the transistor Q1 is electrically connected to a power supply potential via a choke coil. The transistor Q1 amplifies the first phase high frequency signal RFin1-1 input to the base, and outputs the amplified first phase high frequency signal RF1-1 from the collector.

[0059] The second phase amplifier 2-2 of the carrier amplifier 2 includes a transistor Q2. The emitter of the transistor Q2 is electrically connected to a reference potential. The second phase high frequency signal RFin1-2 and a base bias current (not shown) are input to the base of the transistor Q2. The collector of the transistor Q2 is electrically connected to the power supply potential via a choke coil. The transistor Q2 amplifies the second phase high frequency signal RFin1-2 input to the base, and outputs the amplified second phase high frequency signal RF1-2 from the collector.

[0060] The first phase amplifier 3-1 of the peak amplifier 3 includes a transistor Q3. The emitter of the transistor Q3 is electrically connected to a reference potential. The first phase high frequency signal RFin2-1 and a base bias current (not shown) are input to the base of the transistor Q3. The collector of the transistor Q3 is electrically connected to the power supply potential via a choke coil. The transistor Q3 amplifies the first phase high frequency signal RFin2-1 input to the base, and outputs the amplified first phase high frequency signal RF2-1 from the collector.

[0061] The second phase amplifier 3-2 of the peak amplifier 3 includes a transistor Q4. The emitter of the transistor Q4 is electrically connected to the reference potential. The second phase high frequency signal RFin2-2 and the base bias current (not shown) are input to the base of the transistor Q4. The collector of the transistor Q4 is electrically connected to the power supply potential via a choke coil. The transistor Q4 amplifies the second phase high frequency signal RFin2-2 input to the base, and outputs the amplified second phase high frequency signal RF2-2 from the collector.

[0062] In the present disclosure, each transistor is set as a bipolar transistor, but the present disclosure is not limited to this. The bipolar transistor can be exemplified by a heterojunction bipolar transistor (HBT), but the present disclosure is not limited to this. The transistor can also be, for example, a field effect transistor (FET). The transistor can also be a multi-finger transistor in which a plurality of unit transistors are electrically connected in parallel. The so-called unit transistor refers to the minimum structure that constitutes a transistor.

[0063] When each transistor is a FET, the source corresponds to the emitter of the bipolar transistor, the gate corresponds to the base of the bipolar transistor, and the drain corresponds to the collector of the bipolar transistor.

[0064] The phase shifter 4 includes an inductor 11 and an inductor 12. The inductor 11 and the inductor 12 can also be realized by a transmission line (for example, wiring). In addition, the phase shifter 4 may further include a capacitor 13.

[0065] When the phase shifter 4 includes the capacitor 13 , one end of the capacitor 13 is electrically connected to one end of the inductor 11 , and the other end of the capacitor 13 is electrically connected to one end of the inductor 12 .

[0066] When the phase shifter 4 includes the capacitor 13 , the capacitor 13 may be formed in a semiconductor device 31 (described later) or in a printed wiring board 32 (described later).

[0067] One end of the inductor 11 is electrically connected to the collector of the transistor Q1. The other end of the inductor 11 is electrically connected to the node N1. The inductor 11 delays the phase of the first-phase high-frequency signal RF1-1 and outputs it to the node N1.

[0068] One end of the inductor 12 is electrically connected to the collector of the transistor Q2. The other end of the inductor 12 is electrically connected to the node N2. The inductor 12 delays the phase of the second-phase high-frequency signal RF1-2 and outputs it to the node N2.

[0069] The collector of transistor Q3 is electrically connected to node N1. At node N1, the first phase high frequency signal RF1-1 and the first phase high frequency signal RF2-1 overlap each other after passing through phase shifter 4. That is, node N1 is a synthesis point where the first phase high frequency signal RF1-1 and the first phase high frequency signal RF2-1 are synthesized.

[0070] The collector of transistor Q4 is electrically connected to node N2. At node N2, the second phase high frequency signal RF1-2 and the second phase high frequency signal RF2-2 overlap each other after passing through the phase shifter 4. That is, node N2 is a synthesis point where the second phase high frequency signal RF1-2 and the second phase high frequency signal RF2-2 are synthesized.

[0071] The balun 5 includes a first winding 21 and a second winding 22 .

[0072] One end of the first winding 21 is electrically connected to the node N1. The other end of the first winding 21 is electrically connected to the node N2. The second winding 22 is magnetically coupled to the first winding 21. A high-frequency signal RFout is output from one end of the second winding 22. The other end of the second winding 22 is electrically connected to a reference potential.

[0073] (Layout of Comparative Example)

[0074] Figure 2 : is a figure which shows the layout of the Doherty amplifier of a comparative example. Figure 2 This is an explanatory diagram schematically illustrating the connection relationship of wirings and the like when viewing the Doherty amplifier 200 of the comparative example from a direction parallel to the main surface thereof.

[0075] The Doherty amplifier 200 is a printed circuit board in which a semiconductor device 31 is mounted on a printed wiring board 32. The main surfaces of the semiconductor device 31 and the printed wiring board 32 are along the XY plane.

[0076] The semiconductor device 31 includes transistors Q1 to Q4 .

[0077] Considering the symmetry of the inductance, transistor Q1 and transistor Q2 are arranged adjacent to each other. The so-called adjacent arrangement of transistor Q1 and transistor Q2 means that no other transistor is arranged between transistor Q1 and transistor Q2, and it does not hinder the existence of elements other than transistors. Similarly, transistor Q3 and transistor Q4 are arranged adjacent to each other. Transistor Q2 and transistor Q3 are arranged adjacent to each other.

[0078] That is, the transistors Q1 to Q4 are sequentially arranged on a straight line along the X-axis direction.

[0079] A metal portion 111 is formed on the lower surface of the semiconductor device 31 (the surface opposite to the printed wiring board 32, the surface in the direction opposite to the Z-axis direction, and the surface on the lower side of the paper). The metal portion 111 can be exemplified by a connection pad (1and) of the metal layer of the semiconductor device 31. The metal portion 111 is electrically connected to the collector of the transistor Q1. A bump 121 is formed on the lower part of the metal portion 111 (the printed wiring board 32 side, the side in the direction opposite to the Z-axis direction, and the lower side of the paper). The bump 121 is electrically connected to the metal portion 111.

[0080] The metal portion 111 corresponds to an example of the “first terminal” in the present disclosure. The bump 121 corresponds to an example of the “first metal member” in the present disclosure.

[0081] A metal portion 112 is formed on the lower surface of the semiconductor device 31. The metal portion 112 may be exemplified by a connection pad of a metal layer of the semiconductor device 31. The metal portion 112 is electrically connected to the collector of the transistor Q2. A bump 122 is formed below the metal portion 112. The bump 122 is electrically connected to the metal portion 112.

[0082] The metal portion 112 corresponds to an example of the “second terminal” in the present disclosure. The bump 122 corresponds to an example of the “second metal member” in the present disclosure.

[0083] A metal portion 113 is formed on the lower surface of the semiconductor device 31. The metal portion 113 may be exemplified by a connection pad of a metal layer of the semiconductor device 31. The metal portion 113 is electrically connected to the collector of the transistor Q3. A bump 123 is formed below the metal portion 113. The bump 123 is electrically connected to the metal portion 113.

[0084] The metal portion 113 corresponds to an example of the “third terminal” in the present disclosure.

[0085] A metal portion 114 is formed on the lower surface of the semiconductor device 31. The metal portion 114 may be exemplified as a connection pad of a metal layer of the semiconductor device 31. The metal portion 114 is electrically connected to the collector of the transistor Q4. A bump 124 is formed below the metal portion 114. The bump 124 is electrically connected to the metal portion 114.

[0086] The metal portion 114 corresponds to an example of the “fourth terminal” in the present disclosure.

[0087] The metal parts 111 to 114 are sequentially arranged on a straight line along the X-axis direction. The bumps 121 to 124 are sequentially arranged on a straight line along the X-axis direction.

[0088] In the present disclosure, each metal portion is sometimes referred to as a metal electrode or an under bump metal (UBM). Each metal portion is formed of a material including at least one of Ti, Cr, Cu, Au, Ni, and Pd, for example.

[0089] In the present disclosure, each bump is, for example, a pillar bump, for example, made of copper (Cu). In addition to copper, each bump may also be made of a low-resistance metal material such as aluminum (Al) or gold (Au). Each bump may also be, for example, a solder bump or a stud bump.

[0090] The semiconductor device 31 is electrically connected to the printed wiring board 32 through the bumps 121 to 124 .

[0091] Vias 131 to 134 are formed in the printed wiring board 32. One end of the via 131 is electrically connected to the bump 121. One end of the via 132 is electrically connected to the bump 122. One end of the via 133 is electrically connected to the bump 123. One end of the via 134 is electrically connected to the bump 124.

[0092] When capacitor 13 (refer to Figure 1 ), one end of the capacitor 13 can be exemplified as being electrically connected to the other end of the via 131. The other end of the capacitor 13 can be exemplified as being electrically connected to the other end of the via 132. The capacitor 13 can be an SMD (Surface Mount Device) mounted on the surface of the printed wiring board 32, or can be formed by two metal layers of the printed wiring board 32.

[0093] The other end of the via 133 is electrically connected to one end of the first winding 21 of the balun 5 . The other end of the via 134 is electrically connected to the other end of the first winding 21 of the balun 5 .

[0094] The wiring 141 is formed on the first metal layer of the printed wiring board 32 (the metal layer closest to the semiconductor device 31 , the metal layer on the front side in the Z-axis direction, and the metal layer on the upper side of the paper).

[0095] The wiring 141 corresponds to the inductor 11 (see Figure 1 ) The wiring 141 corresponds to an example of the “first wiring” in the present disclosure.

[0096] One end of the wiring 141 is electrically connected to the other end of the via 131. The other end of the wiring 141 is electrically connected between one end and the other end of the via 133. The connection point between the wiring 141 and the via 133 is a synthesis point 211 where the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 are synthesized.

[0097] That is, in the Doherty amplifier 200 , the combining point 211 is provided in the printed wiring board 32 .

[0098] Wiring 142 is formed on the second metal layer of the printed wiring board 32 (a metal layer that is one layer farther from the semiconductor device 31 than the first metal layer, a metal layer next to the first metal layer and in the direction opposite to the Z-axis direction, and a metal layer that is one layer below the paper surface than the first metal layer).

[0099] The wiring 142 corresponds to the inductor 12 (see Figure 1 ) The wiring 142 corresponds to an example of the “second wiring” in the present disclosure.

[0100] One end of the wiring 142 is electrically connected to the other end of the via 132. The other end of the wiring 142 is electrically connected between one end and the other end of the via 134. The connection point between the wiring 142 and the via 134 is a synthesis point 212 where the second phase high frequency signal RF1-2 output from the transistor Q2 and the second phase high frequency signal RF2-2 output from the transistor Q4 are synthesized.

[0101] That is, in the Doherty amplifier 200 , the combining point 212 is provided in the printed wiring board 32 .

[0102] In the Doherty amplifier 200, the longer the distance 221 between the bump 123 and the synthesis point 211, the greater the inductance value between the collector of the transistor Q3 and the synthesis point 211. Similarly, the longer the distance 222 between the bump 124 and the synthesis point 212, the greater the inductance value between the collector of the transistor Q4 and the synthesis point 212. The Doherty amplifier 200 has a large inductance value, so the output characteristics are degraded.

[0103] (Layout of the First Embodiment)

[0104] Figure 3 as well as Figure 4 This is a diagram showing the layout of the Doherty amplifier according to the first embodiment. Figure 3 This is a schematic plan view of the Doherty amplifier 1A according to the first embodiment as viewed from a direction perpendicular to the main surface thereof. Figure 4 This is an explanatory diagram schematically illustrating the connection relationship of wiring and the like as viewed from a direction parallel to the main surface of the Doherty amplifier 1A.

[0105] Reference Figure 3 as well as Figure 4 Compared with the Doherty amplifier 200 , the Doherty amplifier 1A includes a semiconductor device 31A instead of the semiconductor device 31 . Also, compared with the Doherty amplifier 200 , the Doherty amplifier 1A includes a printed wiring board 32A instead of the printed wiring board 32 .

[0106] Compared with the semiconductor device 31 , metal portions 115 and 116 are further formed on the lower surface of the semiconductor device 31A (the surface facing the printed wiring board 32A, the surface in the direction opposite to the Z-axis direction, and the surface on the lower side of the paper).

[0107] The metal portion 115 is electrically connected to the metal portion 113. That is, the metal portion 115 is electrically connected to the collector of the transistor Q3. The metal portion 116 is electrically connected to the metal portion 114. That is, the metal portion 116 is electrically connected to the collector of the transistor Q4.

[0108] The metal portion 115 corresponds to an example of the “fifth terminal” of the present disclosure. The metal portion 116 corresponds to an example of the “sixth terminal” of the present disclosure.

[0109] In the embodiment, the metal portion 115 and the metal portion 116 are each formed in a spherical shape, but the present disclosure is not limited thereto.

[0110] The metal part 115 may also be formed as one piece with the metal part 113. That is, the metal part 115 and the metal part 113 may also be formed of one metal. The metal part 116 may also be formed as one piece with the metal part 114. That is, the metal part 116 and the metal part 114 may also be formed of one metal.

[0111] The metal portion 115 is formed on the side of the metal portion 113 in the direction opposite to the X-axis direction. In other words, the metal portion 115 is formed on the metal portion 111 side of the metal portion 113 .

[0112] The metal portion 116 is formed on the side of the metal portion 114 in the direction opposite to the X-axis direction. In other words, the metal portion 116 is formed on the side of the metal portion 112 with respect to the metal portion 114 .

[0113] Hereinafter, the metal portion 115 formed on the side of the metal portion 113 opposite to the X-axis direction and the metal portion 116 formed on the side of the metal portion 114 opposite to the X-axis direction are sometimes referred to as “the metal portion 115 and the metal portion 116 are formed in the same direction”.

[0114] refer to Figure 4 A bump 125 is formed at the lower part of the metal part 115 (on the printed wiring board 32A side, on the side opposite to the Z-axis direction, on the lower side of the paper). The bump 125 is electrically connected to the metal part 115. A bump 126 is formed at the lower part of the metal part 116. The bump 126 is electrically connected to the metal part 116.

[0115] The bump 125 corresponds to an example of the "third metal member" of the present disclosure. The bump 126 corresponds to an example of the "fourth metal member" of the present disclosure.

[0116] The semiconductor device 31 is electrically connected to the printed wiring board 32A through the bumps 121 to 126 .

[0117] The first winding 21 of the balun 5 is formed on the first metal layer of the printed wiring board 32A (the metal layer closest to the semiconductor device 31A, the metal layer on the front side in the Z-axis direction, and the metal layer on the upper side of the paper). One end of the first winding 21 is electrically connected to the bump 123. The other end of the first winding 21 is electrically connected to the bump 124. The second winding 22 of the balun 5 is formed on the second metal layer of the printed wiring board 32A (a metal layer that is one layer farther from the semiconductor device 31A than the first metal layer, a metal layer that is next to the first metal layer and in the opposite direction to the Z-axis direction, and a metal layer that is one layer lower than the first metal layer).

[0118] Wiring 141 is formed on the second metal layer. Wiring 142 is formed on the third metal layer (a metal layer that is one layer farther from the semiconductor device 31A than the second metal layer, a metal layer that is next to the second metal layer and in the opposite direction to the Z-axis direction, and a metal layer that is one layer below the paper surface than the second metal layer).

[0119] One end of the via 133 is electrically connected to the bump 125 . One end of the via 134 is electrically connected to the bump 126 .

[0120] The other end of the wiring 141 is electrically connected to the other end of the via 133 .

[0121] Thus, the metal portion 115 is formed at a point where the first phase high frequency signal RF1 - 1 output from the transistor Q1 and the first phase high frequency signal RF2 - 1 output from the transistor Q3 are combined.

[0122] That is, in the Doherty amplifier 1A, the synthesis point (metal portion 115 ) is provided in the semiconductor device 31A.

[0123] The other end of the wiring 142 is electrically connected to the other end of the via 134 .

[0124] Thus, the point at which the second phase high frequency signal RF1 - 2 output from the transistor Q2 and the second phase high frequency signal RF2 - 2 output from the transistor Q4 are combined becomes the metal portion 116 .

[0125] That is, in the Doherty amplifier 1A, the synthesis point (metal portion 116 ) is provided in the semiconductor device 31A.

[0126] (Effect) [1]

[0128] In the Doherty amplifier 1A, the synthesis point of the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 is the metal portion 115 in the semiconductor device 31A. Therefore, the inductance value between the collector of the transistor Q3 and the synthesis point (metal portion 115) becomes small.

[0129] Similarly, the synthesis point of the second phase high frequency signal RF1-2 output from transistor Q2 and the second phase high frequency signal RF2-2 output from transistor Q4 is the metal portion 116 in semiconductor device 31A. Therefore, the inductance value between the collector of transistor Q4 and the synthesis point (metal portion 116) becomes small.

[0130] Therefore, the Doherty amplifier 1A can suppress degradation of output characteristics. [2]

[0132] The distance between the collector of the transistor Q3 and the synthesis point (metal portion 115) is substantially the same as the distance between the collector of the transistor Q4 and the synthesis point (metal portion 116). Thus, the Doherty amplifier 1A easily obtains symmetry between the first phase and the second phase.

[0133] Therefore, the Doherty amplifier 1A can suppress degradation of output characteristics. [3]

[0135] The metal portion 115 and the metal portion 116 are formed in the same direction.

[0136] Therefore, the Doherty amplifier 1A can easily obtain symmetry. [4]

[0138] The metal portion 115 and the metal portion 116 are formed in the same direction. Thus, the Doherty amplifier 1A can suppress the difference between the length of the wiring 141 and the length of the wiring 142. That is, the Doherty amplifier 1A easily obtains symmetry between the first phase and the second phase.

[0139] Therefore, the Doherty amplifier 1A can suppress degradation of output characteristics. [5]

[0141] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. Thus, the Doherty amplifier 1A can shorten the wiring 141. Furthermore, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. Thus, the Doherty amplifier 1A can shorten the wiring 142.

[0142] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. In addition, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. Thus, the Doherty amplifier 1A can reduce the circuit size compared to a case where the metal portion 115 and the metal portion 116 are formed in directions other than the metal portion 111 side and the metal portion 112 side, respectively.

[0143] Therefore, the Doherty amplifier 1A can easily obtain symmetry and suppress degradation of output characteristics. In addition, the Doherty amplifier 1A can reduce the size of the circuit.

[0144] <Second Embodiment>

[0145] Figure 5 as well as Figure 6 It is a diagram showing the layout of the Doherty amplifier according to the second embodiment. Figure 5 This is a schematic plan view of the Doherty amplifier 1B according to the second embodiment as viewed from a direction perpendicular to the main surface thereof. Figure 6 This is an explanatory diagram schematically illustrating the connection relationship of wirings and the like as viewed from a direction parallel to the main surface of the Doherty amplifier 1B.

[0146] Reference Figure 5 as well as Figure 6 Compared with the Doherty amplifier 1A, the Doherty amplifier 1B includes a semiconductor device 31B instead of the semiconductor device 31A. Also, compared with the Doherty amplifier 1A, the Doherty amplifier 1B includes a printed wiring board 32B instead of the printed wiring board 32A.

[0147] The transistor Q1 and the transistor Q3 are arranged adjacent to each other. The transistor Q3 and the transistor Q2 are arranged adjacent to each other. The transistor Q2 and the transistor Q4 are arranged adjacent to each other.

[0148] That is, the transistor Q1 , the transistor Q3 , the transistor Q2 , and the transistor Q4 are sequentially arranged on a straight line along the X-axis direction.

[0149] The metal parts 111 , 113 , 112 , and 114 are sequentially arranged on a straight line along the X-axis direction. The bumps 121 , 123 , 122 , and 124 are sequentially arranged on a straight line along the X-axis direction.

[0150] The metal portion 115 is formed on the side of the metal portion 113 in the direction opposite to the X-axis direction. The metal portion 116 is formed on the side of the metal portion 114 in the direction opposite to the X-axis direction.

[0151] That is, the metal portion 115 and the metal portion 116 are formed in the same direction.

[0152] The first winding 21 of the balun 5 is formed on the first metal layer of the printed wiring board 32B (the metal layer closest to the semiconductor device 31B, the metal layer on the front side in the Z-axis direction, and the metal layer on the upper side of the paper). One end of the first winding 21 is electrically connected to the bump 123. The other end of the first winding 21 is electrically connected to the bump 124. The second winding 22 of the balun 5 is formed on the second metal layer of the printed wiring board 32B (a metal layer that is one layer farther from the semiconductor device 31B than the first metal layer, a metal layer that is next to the first metal layer and in the opposite direction to the Z-axis direction, and a metal layer that is one layer below the paper surface than the first metal layer).

[0153] The wiring 141 and the wiring 142 are formed in the first metal layer.

[0154] One end of the via 131 is electrically connected to the bump 121 . One end of the via 133 is electrically connected to the bump 125 .

[0155] One end of the wiring 141 is electrically connected to the other end of the via 131 . The other end of the wiring 141 is electrically connected to the other end of the via 133 .

[0156] One end of the via 132 is electrically connected to the bump 122 . One end of the via 134 is electrically connected to the bump 126 .

[0157] One end of the wiring 142 is electrically connected to the other end of the via 132 . The other end of the wiring 142 is electrically connected to the other end of the via 134 .

[0158] (Effect) [1]

[0160] In the Doherty amplifier 1B, the synthesis point of the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 is the metal portion 115 in the semiconductor device 31B. Therefore, the inductance value between the collector of the transistor Q3 and the synthesis point (metal portion 115) becomes small.

[0161] Similarly, the synthesis point of the second phase high frequency signal RF1-2 output from transistor Q2 and the second phase high frequency signal RF2-2 output from transistor Q4 is the metal portion 116 in semiconductor device 31B. Therefore, the inductance value between the collector of transistor Q4 and the synthesis point (metal portion 116) becomes small.

[0162] Therefore, the Doherty amplifier 1B can suppress degradation of output characteristics. [2]

[0164] The distance between the collector of the transistor Q3 and the synthesis point (metal portion 115) is substantially the same as the distance between the collector of the transistor Q4 and the synthesis point (metal portion 116). Thus, the Doherty amplifier 1B easily obtains symmetry between the first phase and the second phase.

[0165] Therefore, the Doherty amplifier 1B can suppress degradation of output characteristics. [3]

[0167] The metal portion 115 and the metal portion 116 are formed in the same direction.

[0168] Thus, the Doherty amplifier 1B can reduce the size of the circuit compared to a case where the metal portion 115 and the metal portion 116 are formed in different directions. [4]

[0170] The metal portion 115 and the metal portion 116 are formed in the same direction. Thus, the Doherty amplifier 1B can suppress the difference between the length of the wiring 141 and the length of the wiring 142. That is, the Doherty amplifier 1B easily obtains symmetry between the first phase and the second phase.

[0171] Therefore, the Doherty amplifier 1B can suppress degradation of output characteristics. [5]

[0173] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. Furthermore, the metal portion 115 is formed next to the metal portion 111. In addition, the wiring 141 is formed on the first metal layer. Thus, the Doherty amplifier 1B can shorten the wiring 141.

[0174] In addition, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. Furthermore, the metal portion 116 is formed next to the metal portion 112. In addition, the wiring 142 is formed in the first metal layer. Thus, the Doherty amplifier 1B can shorten the wiring 142.

[0175] Therefore, the Doherty amplifier 1B can suppress the degradation of the output characteristics. In addition, the Doherty amplifier 1B can reduce the size of the circuit.

[0176] <Third Embodiment>

[0177] Figure 7 as well as Figure 8 This is a diagram showing the layout of the Doherty amplifier according to the third embodiment. Figure 7 This is a schematic plan view of the Doherty amplifier 1C according to the third embodiment as viewed from a direction perpendicular to the main surface thereof. Figure 8 This is an explanatory diagram schematically illustrating the connection relationship of wirings and the like as viewed from a direction parallel to the main surface of the Doherty amplifier 1C.

[0178] Reference Figure 7 as well as Figure 8 Compared with the Doherty amplifier 1B, the Doherty amplifier 1C includes a semiconductor device 31C instead of the semiconductor device 31B. Also, compared with the Doherty amplifier 1B, the Doherty amplifier 1C includes a printed wiring board 32C instead of the printed wiring board 32B.

[0179] The transistor Q1 and the transistor Q3 are arranged adjacent to each other. The transistor Q3 and the transistor Q4 are arranged adjacent to each other. The transistor Q4 and the transistor Q2 are arranged adjacent to each other.

[0180] That is, the transistor Q1 , the transistor Q3 , the transistor Q4 , and the transistor Q2 are sequentially arranged on a straight line along the X-axis direction.

[0181] The metal parts 111 , 113 , 114 , and 112 are sequentially arranged on a straight line along the X-axis direction. The bumps 121 , 123 , 124 , and 122 are sequentially arranged on a straight line along the X-axis direction.

[0182] The metal portion 115 is formed on the side of the metal portion 113 in the direction opposite to the X-axis direction. The metal portion 116 is formed on the side of the metal portion 114 in the X-axis direction.

[0183] Hereinafter, the formation of the metal portion 115 on the opposite side of the metal portion 113 in the X-axis direction and the metal portion 116 on the X-axis direction side of the metal portion 114 may be referred to as “the metal portion 115 and the metal portion 116 are formed in opposite directions”.

[0184] The first winding 21 of the balun 5 is formed on the first metal layer of the printed wiring board 32C (the metal layer closest to the semiconductor device 31C, the metal layer on the front side in the Z-axis direction, and the metal layer on the upper side of the paper). One end of the first winding 21 is electrically connected to the bump 123. The other end of the first winding 21 is electrically connected to the bump 124. The second winding 22 of the balun 5 is formed on the second metal layer of the printed wiring board 32C (a metal layer that is one layer farther from the semiconductor device 31C than the first metal layer, a metal layer that is next to the first metal layer and in the opposite direction to the Z-axis direction, and a metal layer that is one layer below the paper surface than the first metal layer).

[0185] The wiring 141 and the wiring 142 are formed in the first metal layer.

[0186] One end of the via 131 is electrically connected to the bump 121 . One end of the via 133 is electrically connected to the bump 125 .

[0187] One end of the wiring 141 is electrically connected to the other end of the via 131 . The other end of the wiring 141 is electrically connected to the other end of the via 133 .

[0188] One end of the via 132 is electrically connected to the bump 122 . One end of the via 134 is electrically connected to the bump 126 .

[0189] One end of the wiring 142 is electrically connected to the other end of the via 132 . The other end of the wiring 142 is electrically connected to the other end of the via 134 .

[0190] (Effect) [1]

[0192] In the Doherty amplifier 1C, the synthesis point of the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 is the metal portion 115 in the semiconductor device 31C. Therefore, the inductance value between the collector of the transistor Q3 and the synthesis point (metal portion 115) becomes small.

[0193] Similarly, the synthesis point of the second phase high frequency signal RF1-2 output from transistor Q2 and the second phase high frequency signal RF2-2 output from transistor Q4 is the metal portion 116 in the semiconductor device 31C. Therefore, the inductance value between the collector of transistor Q4 and the synthesis point (metal portion 116) becomes small.

[0194] Therefore, the Doherty amplifier 1C can suppress degradation of output characteristics. [2]

[0196] The distance between the collector of the transistor Q3 and the synthesis point (metal portion 115) is substantially the same as the distance between the collector of the transistor Q4 and the synthesis point (metal portion 116). Thus, the Doherty amplifier 1C easily obtains symmetry between the first phase and the second phase.

[0197] Therefore, the Doherty amplifier 1C can suppress degradation of output characteristics. [3]

[0199] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. That is, the metal portion 115 is formed next to the metal portion 111. In addition, the wiring 141 is formed on the first metal layer. Thus, the Doherty amplifier 1C can shorten the wiring 141.

[0200] Furthermore, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. That is, the metal portion 116 is formed next to the metal portion 112. Furthermore, the wiring 142 is formed on the first metal layer. Thus, the Doherty amplifier 1C can shorten the wiring 142.

[0201] Therefore, the Doherty amplifier 1C can suppress the degradation of the output characteristics. In addition, the Doherty amplifier 1C can reduce the size of the circuit. [4]

[0203] The metal portion 113 and the metal portion 114 are formed adjacent to each other. Thus, the Doherty amplifier 1C can shorten the distance between the metal portion 113 and the metal portion 114.

[0204] Therefore, the Doherty amplifier 1C can miniaturize the balun 5 and can miniaturize the circuit.

[0205] <Fourth embodiment>

[0206] Fig. 9 as well as Fig.10 This is a diagram showing the layout of the Doherty amplifier according to the fourth embodiment. Fig. 9 This is a schematic plan view as viewed from a direction perpendicular to the main surface of the Doherty amplifier 1D according to the fourth embodiment. Fig.10 This is an explanatory diagram schematically illustrating the connection relationship of wiring and the like as viewed from a direction parallel to the main surface of the Doherty amplifier 1D.

[0207] Reference Fig. 9 as well as Fig.10 Compared with the Doherty amplifier 1A, the Doherty amplifier 1D includes a semiconductor device 31D instead of the semiconductor device 31A. Also, compared with the Doherty amplifier 1A, the Doherty amplifier 1D includes a printed wiring board 32D instead of the printed wiring board 32A.

[0208] Compared with the semiconductor device 31A, the semiconductor device 31D does not have the bumps 121 to 126 .

[0209] Compared with the printed wiring board 32A, the printed wiring board 32D has electrodes 161 to 166 formed on the surface (the surface facing the semiconductor device 31D, the surface in the Z-axis direction).

[0210] The electrode 161 , the electrode 162 , the electrode 165 , the electrode 163 , the electrode 166 , and the electrode 164 are sequentially arranged on a straight line along the X-axis direction.

[0211] One end of the via 131 is electrically connected to the electrode 161. One end of the via 132 is electrically connected to the electrode 162. One end of the via 133 is electrically connected to the electrode 165. One end of the via 134 is electrically connected to the electrode 166. One end of the first winding 21 of the balun 5 is electrically connected to the electrode 163. The other end of the first winding 21 of the balun 5 is electrically connected to the electrode 164.

[0212] The metal part 111 and the electrode 161 are electrically connected via the wires 151 and 152. The metal part 112 and the electrode 162 are electrically connected via the wires 153 and 154. The metal part 115 and the electrode 165 are electrically connected via the wire 159. The metal part 113 and the electrode 163 are electrically connected via the wires 155 and 156. The metal part 116 and the electrode 166 are electrically connected via the wire 160. The metal part 114 and the electrode 164 are electrically connected via the wires 157 and 158.

[0213] In the present disclosure, each wire can be exemplified by gold (Au).

[0214] (Effect) [1]

[0216] In the Doherty amplifier 1D, the synthesis point of the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 is the metal portion 115 in the semiconductor device 31D. Therefore, the inductance value between the collector of the transistor Q3 and the synthesis point (metal portion 115) becomes small.

[0217] Similarly, the synthesis point of the second phase high frequency signal RF1-2 output from transistor Q2 and the second phase high frequency signal RF2-2 output from transistor Q4 is the metal portion 116 in semiconductor device 31D. Therefore, the inductance value between the collector of transistor Q4 and the synthesis point (metal portion 116) becomes small.

[0218] Therefore, the Doherty amplifier 1D can suppress degradation of output characteristics. [2]

[0220] The distance between the collector of the transistor Q3 and the synthesis point (metal portion 115) is substantially the same as the distance between the collector of the transistor Q4 and the synthesis point (metal portion 116). Thus, the Doherty amplifier 1D easily obtains symmetry between the first phase and the second phase.

[0221] Therefore, the Doherty amplifier 1D can suppress degradation of output characteristics. [3]

[0223] The metal portion 115 and the metal portion 116 are formed in the same direction.

[0224] Thus, the Doherty amplifier 1D can reduce the size of the circuit compared to a case where the metal portion 115 and the metal portion 116 are formed in different directions. [4]

[0226] The metal portion 115 and the metal portion 116 are formed in the same direction. Thus, the Doherty amplifier 1D can suppress the difference between the length of the wiring 141 and the length of the wiring 142. That is, the Doherty amplifier 1D easily obtains symmetry between the first phase and the second phase.

[0227] Therefore, the Doherty amplifier 1D can suppress degradation of output characteristics. [5]

[0229] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. Thus, the Doherty amplifier 1D can shorten the wiring 141. Furthermore, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. Thus, the Doherty amplifier 1D can shorten the wiring 142.

[0230] Therefore, the Doherty amplifier ID can suppress the degradation of the output characteristics. In addition, the Doherty amplifier ID can reduce the size of the circuit.

[0231] <Fifth embodiment>

[0232] Fig.11 as well as Fig.12 This is a diagram showing the layout of the Doherty amplifier according to the fifth embodiment. Fig.11 This is a schematic plan view of the Doherty amplifier 1E according to the fifth embodiment as viewed from a direction perpendicular to the main surface thereof. Fig.12 This is an explanatory diagram schematically illustrating the connection relationship of wiring and the like as viewed from a direction parallel to the main surface of the Doherty amplifier 1E.

[0233] Reference Fig.11 as well as Fig.12 Compared with the Doherty amplifier 1B, the Doherty amplifier 1E includes a semiconductor device 31E instead of the semiconductor device 31B. Also, compared with the Doherty amplifier 1B, the Doherty amplifier 1E includes a printed wiring board 32E instead of the printed wiring board 32B.

[0234] Compared with the semiconductor device 31B, the semiconductor device 31E does not have the bumps 121 to 126 .

[0235] Compared with the printed wiring board 32B, the printed wiring board 32E has electrodes 161 to 166 formed on the surface (the surface facing the semiconductor device 31E, the surface in the Z-axis direction).

[0236] The electrode 161 , the electrode 165 , the electrode 163 , the electrode 162 , the electrode 166 , and the electrode 164 are sequentially arranged on a straight line along the X-axis direction.

[0237] One end of the via 131 is electrically connected to the electrode 161. One end of the via 133 is electrically connected to the electrode 165. One end of the via 132 is electrically connected to the electrode 162. One end of the via 134 is electrically connected to the electrode 166. One end of the first winding 21 of the balun 5 is electrically connected to the electrode 163. The other end of the first winding 21 of the balun 5 is electrically connected to the electrode 164.

[0238] The metal part 111 and the electrode 161 are electrically connected via the wire 151 and the wire 152. The metal part 115 and the electrode 165 are electrically connected via the wire 159. The metal part 113 and the electrode 163 are electrically connected via the wire 155 and the wire 156. The metal part 112 and the electrode 162 are electrically connected via the wire 153 and the wire 154. The metal part 116 and the electrode 166 are electrically connected via the wire 160. The metal part 114 and the electrode 164 are electrically connected via the wire 157 and the wire 158.

[0239] (Effect) [1]

[0241] In the Doherty amplifier 1E, the synthesis point of the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 is the metal portion 115 in the semiconductor device 31E. Therefore, the inductance value between the collector of the transistor Q3 and the synthesis point (metal portion 115) becomes small.

[0242] Similarly, the synthesis point of the second phase high frequency signal RF1-2 output from transistor Q2 and the second phase high frequency signal RF2-2 output from transistor Q4 is the metal portion 116 in the semiconductor device 31E. Therefore, the inductance value between the collector of transistor Q4 and the synthesis point (metal portion 116) becomes small.

[0243] Therefore, the Doherty amplifier 1E can suppress degradation of output characteristics. [2]

[0245] The distance between the collector of the transistor Q3 and the synthesis point (metal portion 115) is substantially the same as the distance between the collector of the transistor Q4 and the synthesis point (metal portion 116). Thus, the Doherty amplifier 1E easily obtains symmetry between the first phase and the second phase.

[0246] Therefore, the Doherty amplifier 1E can suppress degradation of output characteristics. [3]

[0248] The metal portion 115 and the metal portion 116 are formed in the same direction.

[0249] Thus, the Doherty amplifier 1E can reduce the size of the circuit compared to a case where the metal portion 115 and the metal portion 116 are formed in different directions. [4]

[0251] The metal portion 115 and the metal portion 116 are formed in the same direction. Thus, the Doherty amplifier 1E can suppress the difference between the length of the wiring 141 and the length of the wiring 142. That is, the Doherty amplifier 1E can easily obtain symmetry between the first phase and the second phase.

[0252] Therefore, the Doherty amplifier 1E can suppress degradation of output characteristics. [5]

[0254] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. Furthermore, the metal portion 115 is formed next to the metal portion 111. In addition, the wiring 141 is formed on the first metal layer. Thus, the Doherty amplifier 1E can shorten the wiring 141.

[0255] In addition, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. Furthermore, the metal portion 116 is formed next to the metal portion 112. In addition, the wiring 142 is formed in the first metal layer. Thus, the Doherty amplifier 1E can shorten the wiring 142.

[0256] Therefore, the Doherty amplifier 1E can suppress the degradation of the output characteristics. In addition, the Doherty amplifier 1E can reduce the size of the circuit.

[0257] <Sixth embodiment>

[0258] Fig.13 as well as Fig.14 This is a diagram showing the layout of the Doherty amplifier according to the sixth embodiment. Fig.13 This is a schematic plan view as viewed from a direction perpendicular to the main surface of the Doherty amplifier 1F according to the sixth embodiment. Fig.14 This is an explanatory diagram schematically illustrating the connection relationship of wiring and the like as viewed from a direction parallel to the main surface of the Doherty amplifier 1F.

[0259] Reference Fig.13 as well as Fig.14 Compared with the Doherty amplifier 1C, the Doherty amplifier 1F includes a semiconductor device 31F instead of the semiconductor device 31C. Also, compared with the Doherty amplifier 1C, the Doherty amplifier 1F includes a printed wiring board 32F instead of the printed wiring board 32C.

[0260] Compared with the semiconductor device 31C, the semiconductor device 31F does not have the bumps 121 to 126 .

[0261] Compared with the printed wiring board 32C, the printed wiring board 32F has electrodes 161 to 166 formed on the surface (the surface facing the semiconductor device 31F, the surface in the Z-axis direction).

[0262] The electrode 161 , the electrode 165 , the electrode 163 , the electrode 164 , the electrode 166 , and the electrode 162 are sequentially arranged on a straight line along the X-axis direction.

[0263] One end of the via 131 is electrically connected to the electrode 161. One end of the via 133 is electrically connected to the electrode 165. One end of the via 134 is electrically connected to the electrode 166. One end of the via 132 is electrically connected to the electrode 162. One end of the first winding 21 of the balun 5 is electrically connected to the electrode 163. The other end of the first winding 21 of the balun 5 is electrically connected to the electrode 164.

[0264] The metal part 111 and the electrode 161 are electrically connected via the wire 151 and the wire 152. The metal part 115 and the electrode 165 are electrically connected via the wire 159. The metal part 113 and the electrode 163 are electrically connected via the wire 155 and the wire 156. The metal part 114 and the electrode 164 are electrically connected via the wire 157 and the wire 158. The metal part 116 and the electrode 166 are electrically connected via the wire 160. The metal part 112 and the electrode 162 are electrically connected via the wire 153 and the wire 154.

[0265] (Effect) [1]

[0267] In the Doherty amplifier 1F, the synthesis point of the first phase high frequency signal RF1-1 output from the transistor Q1 and the first phase high frequency signal RF2-1 output from the transistor Q3 is the metal portion 115 in the semiconductor device 31F. Therefore, the inductance value between the collector of the transistor Q3 and the synthesis point (metal portion 115) becomes small.

[0268] Similarly, the synthesis point of the second phase high frequency signal RF1-2 output from transistor Q2 and the second phase high frequency signal RF2-2 output from transistor Q4 is the metal portion 116 in semiconductor device 31F. Therefore, the inductance value between the collector of transistor Q4 and the synthesis point (metal portion 116) becomes small.

[0269] Therefore, the Doherty amplifier 1F can suppress degradation of output characteristics. [2]

[0271] The distance between the collector of the transistor Q3 and the synthesis point (metal portion 115) is substantially the same as the distance between the collector of the transistor Q4 and the synthesis point (metal portion 116). Thus, the Doherty amplifier 1F easily obtains symmetry between the first phase and the second phase.

[0272] Therefore, the Doherty amplifier 1F can suppress degradation of output characteristics. [3]

[0274] The metal portion 115 is formed on the metal portion 111 side of the metal portion 113. That is, the metal portion 115 is formed next to the metal portion 111. In addition, the wiring 141 is formed on the first metal layer. Thus, the Doherty amplifier 1F can shorten the wiring 141.

[0275] Furthermore, the metal portion 116 is formed on the metal portion 112 side of the metal portion 114. That is, the metal portion 116 is formed next to the metal portion 112. Furthermore, the wiring 142 is formed on the first metal layer. Thus, the Doherty amplifier 1F can shorten the wiring 142.

[0276] Therefore, the Doherty amplifier 1F can suppress the degradation of the output characteristics. In addition, the Doherty amplifier 1F can reduce the size of the circuit. [4]

[0278] The metal portion 113 and the metal portion 114 are formed adjacent to each other. Thus, the Doherty amplifier 1F can shorten the distance between the metal portion 113 and the metal portion 114.

[0279] Therefore, the Doherty amplifier 1F can miniaturize the balun 5 and can miniaturize the circuit.

[0280] <Configuration example of the present disclosure>

[0281] The present disclosure can also adopt the following structures.

[0282] (1) A Doherty amplifier, comprising:

[0283] A semiconductor device including a carrier amplifier and a peak amplifier as differential amplifiers respectively including a first phase amplifier and a second phase amplifier; and

[0284] a printed wiring board having a balun for synthesizing an output signal of the carrier amplifier and an output signal of the peak amplifier,

[0285] The semiconductor device comprises:

[0286] a first terminal electrically connected to an output terminal of the first phase amplifier of the carrier amplifier;

[0287] a second terminal electrically connected to an output terminal of the second phase amplifier of the carrier amplifier;

[0288] a third terminal electrically connected to the output terminal of the first phase amplifier of the peak amplifier and to one end of the balun;

[0289] a fourth terminal electrically connected to the output terminal of the second phase amplifier of the peak amplifier and to the other end of the balun;

[0290] a fifth terminal electrically connected to an output terminal of the first phase amplifier of the peak amplifier; and

[0291] a sixth terminal electrically connected to an output terminal of the second phase amplifier of the peak amplifier,

[0292] The printed wiring board includes a first wiring and a second wiring.

[0293] The Doherty amplifier comprises:

[0294] a first metal member electrically connecting one end of the first wiring and the first terminal;

[0295] a second metal member electrically connecting one end of the second wiring and the second terminal;

[0296] a third metal member electrically connecting the other end of the first wiring and the fifth terminal; and

[0297] The fourth metal member electrically connects the other end of the second wiring and the sixth terminal.

[0298] (2) The Doherty amplifier according to (1) above, wherein:

[0299] The fifth terminal is formed on one direction side of the third terminal.

[0300] The sixth terminal is formed on the one direction side of the fourth terminal.

[0301] (3) The Doherty amplifier according to (1) or (2) above, wherein:

[0302] The fifth terminal is formed on the first terminal side of the third terminal,

[0303] The sixth terminal is formed on the second terminal side of the fourth terminal.

[0304] (4) The Doherty amplifier according to any one of (1) to (3) above, wherein:

[0305] The first phase amplifier of the carrier amplifier and the second phase amplifier of the carrier amplifier are formed adjacent to each other,

[0306] The first phase amplifier of the peak amplifier and the second phase amplifier of the peak amplifier are formed adjacent to each other.

[0307] (5) The Doherty amplifier according to any one of (1) to (3) above, wherein:

[0308] The first metal member, the second metal member, the third metal member, and the fourth metal member are respectively bumps or wires.

[0309] The above-described embodiments are provided to facilitate understanding of the present invention and are not intended to limit the present invention. The present invention may be modified or improved without departing from the gist of the present invention, and equivalents thereof are also included in the present invention.

[0310] (6) The Doherty amplifier according to (1) above, wherein:

[0311] The fifth terminal is formed on the first phase amplifier side of the carrier amplifier with respect to the third terminal.

[0312] The sixth terminal is formed on the second phase amplifier side of the carrier amplifier with respect to the fourth terminal.

Claims

1. A Doherty amplifier, comprising: A semiconductor device including a carrier amplifier and a peak amplifier as differential amplifiers respectively including a first phase amplifier and a second phase amplifier; and a printed wiring board having a balun for synthesizing an output signal of the carrier amplifier and an output signal of the peak amplifier, The semiconductor device comprises: a first terminal electrically connected to an output terminal of the first phase amplifier of the carrier amplifier; a second terminal electrically connected to an output terminal of the second phase amplifier of the carrier amplifier; a third terminal electrically connected to the output terminal of the first phase amplifier of the peak amplifier and to one end of the balun; a fourth terminal electrically connected to the output terminal of the second phase amplifier of the peak amplifier and to the other end of the balun; a fifth terminal electrically connected to an output terminal of the first phase amplifier of the peak amplifier; as well as a sixth terminal electrically connected to an output terminal of the second phase amplifier of the peak amplifier, The printed wiring board includes a first wiring and a second wiring. The Doherty amplifier comprises: a first metal member electrically connecting one end of the first wiring and the first terminal; a second metal member electrically connecting one end of the second wiring and the second terminal; a third metal member electrically connecting the other end of the first wiring and the fifth terminal; as well as The fourth metal member electrically connects the other end of the second wiring and the sixth terminal.

2. The Doherty amplifier according to claim 1, wherein: The fifth terminal is formed on one direction side of the third terminal. The sixth terminal is formed on the one direction side of the fourth terminal.

3. The Doherty amplifier according to claim 1 or 2, wherein: The fifth terminal is formed on the first terminal side of the third terminal, The sixth terminal is formed on the second terminal side of the fourth terminal.

4. The Doherty amplifier according to any one of claims 1 to 3, wherein: The first phase amplifier of the carrier amplifier and the second phase amplifier of the carrier amplifier are formed adjacent to each other, The first phase amplifier of the peak amplifier and the second phase amplifier of the peak amplifier are formed adjacent to each other.

5. The Doherty amplifier according to any one of claims 1 to 3, wherein: The first metal member, the second metal member, the third metal member, and the fourth metal member are respectively bumps or wires.

6. The Doherty amplifier according to claim 1, wherein: The fifth terminal is formed on the first phase amplifier side of the carrier amplifier with respect to the third terminal. The sixth terminal is formed on the second phase amplifier side of the carrier amplifier with respect to the fourth terminal.

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