ADC circuit capable of realizing over-temperature protection, PCB and ADC device
By designing an ADC circuit including a conversion unit, a sampling voltage unit, a comparison unit, a temperature control unit and a storage unit, real-time temperature monitoring and over-temperature protection of the chip are realized, and the problem of lack of an over-temperature protection mechanism in the prior art is solved, and the stability and safety of the chip and equipment are improved.
Patent Information
- Application Number
- CN202411767241.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-04-25
AI Technical Summary
The existing ADC circuit lacks an overtemperature protection mechanism, which leads to degradation of circuit performance or permanent damage in high temperature environments or abnormal temperature rises, affecting the stability and reliability of the system.
An ADC circuit including a conversion unit, a sampling voltage unit, a comparison unit, a temperature control unit and a storage unit is designed. By comparing the temperature threshold in real time, the temperature control unit outputs a temperature control signal to realize the timely cut-off or automatic restart of the chip.
It effectively prevents chip damage or performance degradation caused by overtemperature, improves the stability and reliability of the chip during operation, extends the service life of the equipment, and prevents overheating of the equipment from causing fires or other safety accidents during overtemperature.
Smart Images
Figure CN119892073A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of over-temperature protection, and in particular to an ADC circuit, a PCB board and an ADC device capable of realizing over-temperature protection. Background Art
[0002] The analog-to-digital converter (ADC) is a vital component in electronic systems, which is responsible for converting analog signals into digital signals. Due to the precision of its internal circuits, the ADC is extremely sensitive to temperature changes. When the ambient temperature is too high, the performance of the ADC's internal circuits may be significantly reduced, causing key parameters to drift, and even causing irreversible damage. Abnormal temperature increases will have a negative impact on the accuracy, linearity, and stability of the ADC, resulting in significant errors in the conversion results, thereby reducing the performance of the ADC.
[0003] A common problem in currently designed analog-to-digital converter circuits is the lack of an over-temperature protection mechanism; this means that when the circuit operates in a high-temperature environment or when the temperature rises abnormally due to an internal fault, the circuit does not have corresponding protection measures to prevent circuit damage or performance degradation; the lack of an over-temperature protection mechanism may cause sensitive components in the circuit, such as analog switches, amplifiers, and comparators, to degrade in performance or even be permanently damaged due to overheating, thereby affecting the stability and reliability of the entire system.
[0004] It can be seen that the existing technology still needs to be improved and enhanced. Summary of the invention
[0005] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide an ADC circuit that can achieve over-temperature protection, which can timely cut off the chip operation or automatically restart the chip operation when over-temperature or when the temperature returns to normal, thereby improving the stability and reliability of the chip operation.
[0006] In order to achieve the above object, the present invention adopts the following technical solutions:
[0007] An ADC circuit capable of realizing over-temperature protection comprises a conversion unit, a sampling voltage unit, a comparison unit, a temperature control unit and a register unit; the conversion unit is used to generate a reference voltage signal, the sampling voltage unit is used to generate a sampling voltage signal, the output ends of the conversion unit and the sampling voltage unit are respectively connected to a first input end and a second input end of a comparison unit; the output end of the comparison unit is connected to an input end of the register unit through the temperature control unit, and the temperature control unit is used to output a temperature control signal.
[0008] In the ADC circuit that can achieve over-temperature protection, the conversion unit includes a digital-to-analog converter, a bias voltage unit and a first filter unit, the output end of the digital-to-analog converter is connected to the signal input end of the bias voltage unit, and the signal output end of the bias voltage unit is connected to the first input end of the comparison unit through the first filter unit.
[0009] In the ADC circuit capable of realizing over-temperature protection, the first filtering unit includes a first transistor Q1, a first resistor R1 and an eighteenth field effect transistor M18, the signal output end of the bias voltage unit is connected to the base and collector of the first transistor Q1 and one end of the first resistor R1, the other end of the first resistor R1 is respectively connected to the first input end of the comparison unit and the gate of the eighteenth field effect transistor M18; the emitter of the first transistor Q1 and the source and drain of the eighteenth field effect transistor M18 are respectively grounded.
[0010] In the ADC circuit capable of realizing over-temperature protection, the sampling voltage unit includes a bias current part and a second filtering part, and a signal output end of the bias current part is connected to the second input end of the comparison unit through the second filtering part.
[0011] In the ADC circuit capable of realizing over-temperature protection, the second filtering unit includes a second resistor R2 and a nineteenth field effect transistor M19, the signal output end of the bias current unit is connected to one end of the second resistor R2, and the other end of the second resistor R2 is respectively connected to the second input end of the comparison unit and the gate of the nineteenth field effect transistor M19; the source and drain of the nineteenth field effect transistor M19 are respectively grounded.
[0012] In the ADC circuit capable of realizing over-temperature protection, the comparison unit includes a ninth field effect transistor M9, a tenth field effect transistor M10, an eleventh field effect transistor M11 and a voltage difference limiting portion; the source of the ninth field effect transistor M9 is used to connect to an external power supply device, the gate of the ninth field effect transistor M9 is connected to the bias voltage portion, and the drain of the ninth field effect transistor M9 is respectively connected to the source of the tenth field effect transistor M10 and the source of the eleventh field effect transistor M11; the other end of the first resistor R1 is connected to the gate of the tenth field effect transistor M10, the other end of the second resistor R2 is connected to the gate of the eleventh field effect transistor M11, the drain of the tenth field effect transistor M10 and the drain of the eleventh field effect transistor M11 are respectively connected to the voltage difference limiting portion, and the drain of the eleventh field effect transistor M11 is also connected to the input end of the temperature control unit.
[0013] In the ADC circuit capable of realizing over-temperature protection, the temperature control unit includes a thermal oscillation protection part, a signal enhancement part and a temperature control part, the output end of the comparison unit is connected to the input end of the thermal oscillation protection part, the output end of the thermal oscillation protection part is connected to the input end of the signal enhancement part, the output end of the signal enhancement part is connected to the input end of the temperature control part, the output end of the temperature control part is connected to the input end of the storage unit, and the temperature control part is used to output a temperature control signal.
[0014] In the ADC circuit capable of realizing over-temperature protection, the anti-thermal oscillation part includes a non-inverting amplification group and a positive feedback group, and the signal enhancement part includes a first amplification group, a second amplification group and a third amplification group with the same structure; the input end of the non-inverting amplification group is connected to the output end of the comparison unit, the output end of the non-inverting amplification group is connected to one end of the positive feedback group, the other end of the positive feedback group is connected to the input end of the first amplification group, the output end of the first amplification group is connected to the input end of the second amplification group, the output end of the second amplification group is connected to the input end of the third amplification group, and the output end of the third amplification group is connected to the input end of the temperature control part.
[0015] The present application also provides a PCB board accordingly, on which is printed an ADC circuit as described above for implementing over-temperature protection.
[0016] The present application also correspondingly provides an ADC device, which uses any of the above-mentioned ADC circuits capable of achieving over-temperature protection to achieve operation control.
[0017] Beneficial effects:
[0018] The present invention provides an ADC circuit capable of realizing over-temperature protection. A comparison unit is used to realize comparison between real-time temperature and a threshold of a shutdown temperature and a threshold of a startup temperature. When an over-temperature problem occurs or when the temperature returns to normal, the temperature control unit outputs a temperature control signal accordingly to realize timely cutting off of chip operation or automatic restart of chip operation, thereby improving the stability and reliability of the chip during operation. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 A circuit block diagram of the ADC circuit provided by the present invention;
[0020] Figure 2 This is a circuit schematic diagram of the comparison unit, temperature control unit, reference unit and sampling voltage unit provided by the present invention.
[0021] Explanation of main component symbols: 1-conversion unit, 11-bias voltage unit, 12-first filtering unit, 13-digital-to-analog converter, 2-comparison unit, 3-sampling voltage unit, 31-bias current unit, 32-second filtering unit, 41-thermal oscillation protection unit, 411-non-inverting amplifier group, 412-positive feedback group, 42-signal enhancement unit, 421-first amplifier group, 422-second amplifier group, 423-third amplifier group, 43-temperature control unit, 5-register unit. DETAILED DESCRIPTION
[0022] The present invention provides an ADC circuit, a PCB board and an ADC device capable of implementing over-temperature protection. To make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below with reference to the accompanying drawings and examples.
[0023] In the description of the present invention, it should be understood that the terms "installation", "connection" and the like should be understood in a broad sense, and a person skilled in the art can understand the specific meanings of the above terms in the present invention according to specific circumstances.
[0024] See also Figure 1 and Figure 2 The present invention provides an ADC circuit capable of realizing over-temperature protection, comprising a conversion unit 1, a sampling voltage unit 3, a comparison unit 2, a temperature control unit and a register unit 5; the conversion unit 1 is used to generate a reference voltage signal, the sampling voltage unit 3 is used to generate a sampling voltage signal, the output ends of the conversion unit 1 and the sampling voltage unit 3 are respectively connected to a first input end and a second input end of the comparison unit 2; the output end of the comparison unit 2 is connected to an input end of the register unit 5 through the temperature control unit, and the temperature control unit is used to output a temperature control signal.
[0025] The present application discloses an ADC circuit capable of realizing over-temperature protection. The comparison unit 2 compares the real-time temperature of the chip during actual operation with the preset shutdown temperature threshold and the startup temperature threshold. When the real-time temperature of the chip exceeds the preset shutdown temperature threshold, indicating an over-temperature problem, the temperature control unit will promptly send a corresponding temperature control signal to quickly cut off the power supply of the chip, thereby avoiding chip damage or other potential risks caused by high temperature and ensuring the safe operation of the chip. When the real-time temperature of the chip falls below the startup temperature threshold, that is, the temperature returns to normal, the temperature control unit sends a temperature control signal to automatically restart the chip to restore it to normal working state. The stability and reliability of the chip during operation are improved, and the device can be effectively prevented from being damaged due to overheating, thereby improving the reliability and service life of the device. In addition, for applicable scenarios such as battery charging and heat dissipation of electronic equipment, the chip operation can be promptly cut off when over-temperature occurs, thereby preventing the device from overheating and causing fire or other safety accidents, thereby protecting the safety of the device and personnel.
[0026] For further information, see Figure 1 and Figure 2 The conversion unit 1 includes a digital-to-analog converter 13, a bias voltage unit 11 and a first filter unit 12. The output end of the digital-to-analog converter 13 is connected to the signal input end of the bias voltage unit 11, and the signal output end of the bias voltage unit 11 is connected to the first input end of the comparison unit 2 through the first filter unit 12.
[0027] In this embodiment, for the ADC circuit, the signal is first transmitted from the sampling voltage unit 3 to the positive input terminal of the comparison unit 2, and the sampling voltage signal enters the SAR logic of the next level, that is, the register unit 5, and the SAR logic converts the analog signal into a digital signal and saves it; the converted digital signal can then be fed back to the digital-to-analog converter 13, that is, the DAC. After receiving the digital signal, the DAC generates a corresponding analog signal, that is, a reference voltage, and feeds it back to the negative input terminal of the comparison unit 2; finally, the positive and negative phase signals are compared in the comparison unit 2 to complete the entire conversion process.
[0028] In this embodiment, the bias voltage unit 11 and the digital-to-analog converter 13 cooperate, and the generated bias voltage signal is processed by the first filter unit 12 and then input to the first input terminal of the comparison unit 2, which can effectively reduce noise interference, improve the stability of the output reference voltage signal, enhance the adaptability of the ADC circuit to environmental changes, and improve the stability and reliability of the ADC during operation.
[0029] For further information, see Figure 2 The first filtering unit 12 includes a first transistor Q1, a first resistor R1 and an eighteenth field effect transistor M18. The signal output end of the bias voltage unit 11 is connected to the base and collector of the first transistor Q1 and one end of the first resistor R1. The other end of the first resistor R1 is respectively connected to the first input end of the comparison unit 2 and the gate of the eighteenth field effect transistor M18; the emitter of the first transistor Q1 and the source and drain of the eighteenth field effect transistor M18 are respectively grounded.
[0030] In this embodiment, the bias voltage signal generated by the bias voltage unit 11 is processed by the first transistor Q1 to generate a reference voltage signal and input to the first input terminal of the comparison unit 2; the bias voltage unit 11 is a current mirror circuit, including a first field effect transistor M1, a second field effect transistor M2, a third field effect transistor M3, a fourth field effect transistor M4, a fifth field effect transistor M5, a sixth field effect transistor M6, a seventh field effect transistor M7 and an eighth field effect transistor M8; the gate of the sixth field effect transistor M6 is connected to the gate of the ninth field effect transistor M9 of the comparison unit 2, and the drain of the eighth field effect transistor M8 is respectively connected to one end of the first resistor R1 and the collector and base of the first transistor Q1.
[0031] For further information, see Figure 1 and Figure 2 The sampling voltage unit 3 includes a bias current unit 31 and a second filter unit 32 , and a signal output end of the bias current unit 31 is connected to a second input end of the comparison unit 2 through the second filter unit 32 .
[0032] In this embodiment, the sampling voltage signal generated by the bias current unit 31 is processed by the second filter unit 32 and then input to the second input terminal of the comparison unit 2, which can effectively reduce noise interference, improve the stability of the output sampling voltage signal, enhance the adaptability of the ADC circuit to environmental changes, and improve the stability and reliability of the ADC circuit during operation.
[0033] In this embodiment, the bias current unit 31 includes a current mirror circuit consisting of a twentieth field effect transistor M20, a twenty-first field effect transistor M21, a twenty-second field effect transistor M22, a twenty-third field effect transistor M23 and a twenty-fourth field effect transistor M24, and a third resistor R3; the current mirror circuit is used to generate a saturation current, and generate a sampling voltage signal through the third resistor R3 to be input to the second filtering unit 32; the drain of the twenty-first field effect transistor M21, the source of the twenty-fourth field effect transistor M24 and one end of the third resistor R3 are respectively connected to one end of the second resistor R2; the gate of the twenty-fourth field effect transistor M24 is also connected to the input end of the third amplifier unit.
[0034] For further information, see Figure 2 The second filtering unit 32 includes a second resistor R2 and a nineteenth field effect transistor M19. The signal output end of the bias current unit 31 is connected to one end of the second resistor R2, and the other end of the second resistor R2 is respectively connected to the second input end of the comparison unit 2 and the gate of the nineteenth field effect transistor M19; the source and drain of the nineteenth field effect transistor M19 are respectively grounded.
[0035] For further information, see Figure 1 and Figure 2The comparison unit 2 includes a ninth field effect transistor M9, a tenth field effect transistor M10, an eleventh field effect transistor M11 and a voltage difference limiting unit; the source of the ninth field effect transistor M9 is used to connect to an external power supply device, the gate of the ninth field effect transistor M9 is connected to the bias voltage unit 11, and the drain of the ninth field effect transistor M9 is respectively connected to the source of the tenth field effect transistor M10 and the source of the eleventh field effect transistor M11; the other end of the first resistor R1 is connected to the gate of the tenth field effect transistor M10, the other end of the second resistor R2 is connected to the gate of the eleventh field effect transistor M11, the drain of the tenth field effect transistor M10 and the drain of the eleventh field effect transistor M11 are respectively connected to the voltage difference limiting unit, and the drain of the eleventh field effect transistor M11 is also connected to the input end of the temperature control unit.
[0036] In this example, see Figure 2 The voltage difference limiting unit includes a twelfth field effect transistor M12, a thirteenth field effect transistor M13, a fourteenth field effect transistor M14, a fifteenth field effect transistor M15, a sixteenth field effect transistor M16 and a seventeenth field effect transistor M17; the drain of the tenth field effect transistor M10 is connected to the drain of the thirteenth field effect transistor M13, and the drain of the eleventh field effect transistor M11 is connected to the drain of the fifteenth field effect transistor M15; the voltage difference limiting unit is used to process and adjust the voltage signals from the tenth field effect transistor M10 and the eleventh field effect transistor M11 to ensure that these signals are within a safe and stable range and prevent circuit failure or instability caused by excessive voltage difference.
[0037] The comparison unit 2 disclosed in the present application has the following working modes:
[0038] When the chip initially starts working, it is at room temperature. At this time, the sampling voltage signal is greater than the reference voltage signal, the eleventh field effect tube M11 is turned on so that the voltage on the first resistor R1 is zero, and the output temperature control signal is high level; as the operating temperature of the chip increases, since the transistor has a negative temperature coefficient, the sampling voltage signal gradually decreases as the operating temperature increases. When the sampling voltage signal is consistent with the reference voltage signal, the threshold point of the shutdown temperature can be calculated based on the sampling voltage value, the reference voltage value, the BE voltage of the first transistor Q1, and the resistance value of the second resistor R2; when the sampling voltage signal is lower than the reference voltage signal, the eleventh field effect tube M11 is turned off and the output temperature control signal is low level. At this time, the chip will automatically stop working, that is, the timely shutdown function when overtemperature is realized;
[0039] As the chip stops working, the working temperature of the chip will continue to decrease, the reference voltage signal will gradually decrease as the temperature decreases, and the sampling voltage signal will gradually increase as the temperature rises. When the reference voltage signal is consistent with the sampling voltage signal, the threshold point of the start-up temperature can be calculated according to the sampling voltage value, the reference voltage value, the BE voltage of the first transistor Q1, the resistance value of the first resistor R1, and the resistance value of the second resistor R2. When the sampling voltage signal is greater than the reference voltage signal, the first field effect tube M11 is turned on and the output temperature control signal is high. At this time, the chip automatically resumes the working state, that is, the automatic restart function when the temperature is normal is realized, and the stability and continuity of the ADC circuit when working are improved;
[0040] As can be seen from the foregoing, the temperature hysteresis can be calculated by the threshold point of the shutdown temperature and the threshold point of the startup temperature. In actual operation, the threshold point of the shutdown temperature can be adjusted by adjusting the resistance of the second resistor R2, and the temperature hysteresis can be adjusted by adjusting the resistance of the first resistor R1 to achieve the adjustment of the threshold point of the startup temperature. The shutdown temperature threshold and the startup temperature threshold can be adjusted according to the actual application scenario of the ADC circuit to adapt to different temperature environments and working conditions, thereby improving the flexibility of the ADC circuit at work and expanding its scope of application.
[0041] For further information, see Figure 1 and Figure 2 The temperature control unit includes a thermal oscillation prevention part 41, a signal enhancement part 42 and a temperature control part 43. The output end of the comparison unit 2 is connected to the input end of the thermal oscillation prevention part 41, the output end of the thermal oscillation prevention part 41 is connected to the input end of the signal enhancement part 42, the output end of the signal enhancement part 42 is connected to the input end of the temperature control part 43, the output end of the temperature control part 43 is connected to the input end of the storage unit 5, and the temperature control part 43 is used to output a temperature control signal.
[0042] In this embodiment, by providing an anti-thermal oscillation unit 41, thermal oscillation phenomena can be prevented from occurring at the moment of opening and closing, thereby reducing the influence of ripple on circuit signals. By providing a signal enhancement unit 42, the gain of the circuit can be increased, the influence of signal distortion and noise interference on the output temperature control signal can be reduced, and the accuracy and reliability of the temperature control signal at the output end can be improved.
[0043] For further information, see Figure 1 and Figure 2The thermal oscillation protection group includes a non-inverting amplifier group 411 and a positive feedback group 412, and the signal enhancement group includes a first amplifier group 421, a second amplifier group 422 and a third amplifier group 423 with the same structure; the input end of the non-inverting amplifier group 411 is connected to the output end of the comparison unit, the output end of the non-inverting amplifier group 411 is connected to one end of the positive feedback group 412, the other end of the positive feedback group 412 is connected to the input end of the first amplifier group, the output end of the first amplifier group is connected to the input end of the second amplifier group 422, the output end of the second amplifier group 422 is connected to the input end of the third amplifier group 423, and the output end of the third amplifier group 423 is connected to the input end of the temperature control group.
[0044] In this example, see Figure 2 The non-inverting amplifier group 411 includes a twenty-fifth field effect transistor M25, a twenty-sixth field effect transistor M26, a twenty-seventh field effect transistor M27 and a twenty-eighth field effect transistor M28; the positive feedback group 412 includes a twenty-ninth field effect transistor M29 and a thirtieth field effect transistor M30; the gate of the twenty-fifth field effect transistor M25, the gate of the twenty-sixth field effect transistor M26, the gate of the twenty-seventh field effect transistor M27 and the gate of the twenty-eighth field effect transistor M28 are respectively connected to the drain of the eleventh field effect transistor M11; the source of the twenty-fifth field effect transistor M25 and the source of the twenty-sixth ... positive feedback group 412 includes a twenty-ninth field effect transistor M29 and a thirtieth field effect transistor M30; the gate of the twenty-fifth field effect transistor M25, the gate of the twenty-sixth field effect transistor M26, the gate of the twenty-seventh field effect transistor M27 and the gate of the twenty-eighth field effect transistor M28 are respectively connected to the drain of the eleventh field effect transistor M11; the source of the twenty-fifth field effect transistor M25 and the source of the twenty-sixth field effect transistor M28 are respectively connected to the drain of the eleventh field effect transistor M11; the positive feedback group 412 includes a twenty-ninth field effect transistor M29 and a thirtieth field effect transistor M30; the positive feedback group 412 includes a twenty-ninth field effect transistor M29 and a thirtieth field effect transistor The drain of the field effect transistor M26 is respectively connected to the drain of the twenty-ninth field effect transistor M29, the source of the twenty-sixth field effect transistor M26 and the drain of the twenty-seventh field effect transistor M27 are respectively connected to the gate of the twenty-ninth field effect transistor M29 and the thirtieth field effect transistor M30, the source of the twenty-seventh field effect transistor M27 and the drain of the twenty-eighth field effect transistor M28 are respectively connected to the source of the thirtieth field effect transistor M30, and the gate of the twenty-ninth field effect transistor M29 and the gate of the thirtieth field effect transistor M30 are also connected to the input end of the signal enhancement unit 42.
[0045] In this embodiment, the anti-thermal oscillation unit 41 is a Schmitt circuit, which has two stable states and can switch between the two states according to the level change of the input signal. When the input signal changes between two threshold levels, the output signal will jump from a low level to a high level, or from a high level to a low level, thereby realizing the signal shaping and de-jittering functions; in the Schmitt circuit, the output of the non-inverting amplifier group 411 is partially or completely fed back to its input end to form a closed loop; the function of the positive feedback group 412 is to feed back part or all of the output signal to the input end of the non-inverting amplifier group 411 without changing the phase, thereby enhancing the signal in the circuit. When this feedback reaches a certain condition, the circuit will generate self-excited oscillation and output a stable periodic signal.
[0046] For further information, see Figure 2 In this embodiment, the first amplifying group includes a thirty-first field effect transistor M31 and a thirty-second field effect transistor M32, the second amplifying group 422 includes a thirty-third field effect transistor M33 and a thirty-fourth field effect transistor M34, and the third amplifying group 423 includes a thirty-fifth field effect transistor M35 and a thirty-sixth field effect transistor M36; the gates of the thirty-first field effect transistor M31 and the thirty-second field effect transistor M32 are respectively connected to the output end of the positive feedback group 412, and the drain of the thirty-first field effect transistor M31 and The drain of the thirty-second field effect transistor M32 is respectively connected to the gate of the thirty-third field effect transistor M33 and the gate of the thirty-fourth field effect transistor M34; the drain of the thirty-third field effect transistor M33 and the drain of the thirty-fourth field effect transistor M34 are respectively connected to the gate of the thirty-fifth field effect transistor M35 and the gate of the thirty-sixth field effect transistor M36; the drain of the thirty-fifth field effect transistor M35 and the drain of the thirty-sixth field effect transistor M36 are connected to the input end of the temperature control unit 43.
[0047] In this embodiment, the first amplification group, the second amplification group 422 and the third amplification group 423 constitute a cascade driver. Cascading refers to connecting multiple circuit units, such as field effect transistors, in a certain order so that the output of the previous circuit unit becomes the input of the next circuit unit, thereby realizing step-by-step amplification or processing of the signal. The cascade method can significantly improve the gain and performance of the circuit to obtain a stronger output signal.
[0048] For further information, see Figure 2 The temperature control unit 43 includes a thirty-seventh field effect transistor M37, the gate of the thirty-seventh field effect transistor M37 is respectively connected to the drain of the thirty-fifth field effect transistor M35 and the drain of the thirty-sixth field effect transistor M36, and the drain of the thirty-seventh field effect transistor M37 is used to output a temperature control signal.
[0049] The present application also provides a PCB board accordingly, on which is printed an ADC circuit as described above for implementing over-temperature protection.
[0050] The present application also correspondingly provides an ADC device, which uses any of the above-mentioned ADC circuits capable of achieving over-temperature protection to achieve operation control.
[0051] It is understandable that those skilled in the art can make equivalent substitutions or changes based on the technical solution and inventive concept of the present invention, and all these changes or substitutions should fall within the protection scope of the present invention.
Claims
1. An ADC circuit capable of realizing over-temperature protection, characterized in that: It includes a conversion unit, a sampling voltage unit, a comparison unit, a temperature control unit and a register unit; the conversion unit is used to generate a reference voltage signal, the sampling voltage unit is used to generate a sampling voltage signal, the output ends of the conversion unit and the sampling voltage unit are respectively connected to the first input end and the second input end of the comparison unit; the output end of the comparison unit is connected to the input end of the register unit through the temperature control unit, and the temperature control unit is used to output a temperature control signal.
2. The ADC circuit capable of realizing over-temperature protection according to claim 1, characterized in that: The conversion unit includes a digital-to-analog converter, a bias voltage unit and a first filter unit, the output end of the digital-to-analog converter is connected to the signal input end of the bias voltage unit, and the signal output end of the bias voltage unit is connected to the first input end of the comparison unit through the first filter unit.
3. The ADC circuit capable of realizing over-temperature protection according to claim 2, characterized in that: The first filtering unit includes a first transistor Q1, a first resistor R1 and an eighteenth field effect transistor M18. The signal output end of the bias voltage unit is connected to the base and collector of the first transistor Q1 and one end of the first resistor R1. The other end of the first resistor R1 is respectively connected to the first input end of the comparison unit and the gate of the eighteenth field effect transistor M18; the emitter of the first transistor Q1 and the source and drain of the eighteenth field effect transistor M18 are respectively grounded.
4. The ADC circuit capable of realizing over-temperature protection according to claim 3, characterized in that: The sampling voltage unit includes a bias current unit and a second filter unit, and a signal output terminal of the bias current unit is connected to a second input terminal of the comparison unit through the second filter unit.
5. The ADC circuit capable of realizing over-temperature protection according to claim 4, characterized in that: The second filtering unit includes a second resistor R2 and a nineteenth field effect transistor M19, the signal output end of the bias current unit is connected to one end of the second resistor R2, and the other end of the second resistor R2 is respectively connected to the second input end of the comparison unit and the gate of the nineteenth field effect transistor M19; the source and drain of the nineteenth field effect transistor M19 are respectively grounded.
6. The ADC circuit capable of realizing over-temperature protection according to claim 5, characterized in that: The comparison unit includes a ninth field effect transistor M9, a tenth field effect transistor M10, an eleventh field effect transistor M11 and a voltage difference limiting portion; the source of the ninth field effect transistor M9 is used to connect to an external power supply device, the gate of the ninth field effect transistor M9 is connected to the bias voltage portion, and the drain of the ninth field effect transistor M9 is respectively connected to the source of the tenth field effect transistor M10 and the source of the eleventh field effect transistor M11; the other end of the first resistor R1 is connected to the gate of the tenth field effect transistor M10, the other end of the second resistor R2 is connected to the gate of the eleventh field effect transistor M11, the drain of the tenth field effect transistor M10 and the drain of the eleventh field effect transistor M11 are respectively connected to the voltage difference limiting portion, and the drain of the eleventh field effect transistor M11 is also connected to the input end of the temperature control unit.
7. The ADC circuit capable of realizing over-temperature protection according to claim 1, characterized in that: The temperature control unit includes a thermal oscillation prevention part, a signal enhancement part and a temperature control part. The output end of the comparison unit is connected to the input end of the thermal oscillation prevention part, the output end of the thermal oscillation prevention part is connected to the input end of the signal enhancement part, the output end of the signal enhancement part is connected to the input end of the temperature control part, the output end of the temperature control part is connected to the input end of the storage unit, and the temperature control part is used to output a temperature control signal.
8. The ADC circuit capable of realizing over-temperature protection according to claim 7, characterized in that: The thermal oscillation prevention part includes a non-inverting amplifier group and a positive feedback group, and the signal enhancement part includes a first amplifier group, a second amplifier group and a third amplifier group with the same structure; the input end of the non-inverting amplifier group is connected to the output end of the comparison unit, the output end of the non-inverting amplifier group is connected to one end of the positive feedback group, the other end of the positive feedback group is connected to the input end of the first amplifier group, the output end of the first amplifier group is connected to the input end of the second amplifier group, the output end of the second amplifier group is connected to the input end of the third amplifier group, and the output end of the third amplifier group is connected to the input end of the temperature control part.
9. A PCB board, characterized in that: The PCB board is printed with an ADC circuit capable of implementing over-temperature protection as described in any one of claims 1 to 8.
10. An ADC device, characterized in that: The ADC device implements operation control using the ADC circuit capable of implementing over-temperature protection as described in any one of claims 1-8.