Silicon optical module full-temperature optical power adjusting method and system and medium

Abstract

The invention discloses a silicon optical module full-temperature optical power adjusting method, system and device and a medium, and relates to the technical field of optical communication. Based on the current temperature and the voltage set value of the temperature close to the current temperature, a target value is calculated through linear interpolation; respectively acquiring a forward optical power value of a certain optical channel in the silicon optical module and a corresponding laser output optical power value in real time, and defining a ratio of the forward optical power value to the corresponding laser output optical power value as an actual value; calculating the absolute value of the difference value between the target value and the actual value, and judging whether the absolute value is less than 10% of the target value; if not, adjusting the voltage set value, and repeating the steps S2-S4; if yes, adjusting is ended, and a target value is output; the method can effectively solve the problem that the optical power adjusting efficiency of the silicon optical module is low.

Description

Technical Field

[0001] The present invention relates to the field of optical communication technology, and in particular to a method, system and medium for regulating the full-temperature optical power of a silicon photonic module. Background Art

[0002] With the rapid development of information and communication technology, especially in the field of high-speed data transmission and network communication, the application of optical communication systems in high-speed data transmission has gradually become mainstream. As a new type of optoelectronic integration technology, silicon photonic modules have gradually become an indispensable core device in optical communications, data centers and optical networks due to their high bandwidth, low power consumption and low cost advantages.

[0003] In silicon photonic modules, the output optical power of the light source laser is an important factor affecting system performance. The stability of optical power is crucial to the quality of signal transmission, especially in high-frequency, high-speed optical signal transmission. Any slight power fluctuation will cause signal attenuation or distortion, and in severe cases may lead to data loss or bit errors. Therefore, how to achieve precise regulation of laser optical power and improve the stability and reliability of signal transmission has always been a key difficulty in the research of silicon photonic module technology.

[0004] Currently, in practical applications, the optical power control of silicon photonic modules faces some technical challenges, such as optical power fluctuation, nonlinear distortion, power regulation lag, and power that is too low or too high.

[0005] Among them is the problem of optical power fluctuation: due to changes in ambient temperature, device aging or other external factors, the output optical power of the laser often fluctuates, resulting in a decrease in signal quality during transmission, which in turn affects the reliability and accuracy of data transmission.

[0006] Nonlinear distortion problem: During high-speed optical modulation, the transmission of optical signals may be affected by nonlinear effects, resulting in signal distortion and affecting the transmission performance of the system.

[0007] Problems with too low or too high power: If the power of the optical signal is too low, the receiving end may not be able to correctly receive and demodulate the signal; if the power is too high, it may cause signal saturation or damage to the optical components, resulting in system instability.

[0008] Dynamic adjustment problem: Existing power control methods cannot quickly respond to real-time signal changes, resulting in the inability to accurately adjust the output power under different environmental conditions, thus affecting system performance.

[0009] Some existing silicon photonic modules use temperature control to adjust the output power of the laser. The temperature change affects the working state of the semiconductor laser, and thus affects its output optical power. Therefore, it is usually adjusted by making a Heater LUT, that is, a temperature lookup table. Different temperatures in the lookup table correspond to different Heater voltages, that is, voltage setting values. In the actual use of the silicon photonic module, the module can find the corresponding Heater voltage according to the current ambient temperature, thereby alleviating the power changes caused by temperature fluctuations to a certain extent;

[0010] However, in the long-term use of silicon photonic modules, due to the aging of optical devices or module components, the LUT found at the time of initial production, that is, the lookup table, can no longer accurately control the light output of the module. If the initial LUT is relied upon for adjustment, the accuracy of the LUT will surely decrease over time. Therefore, in the middle and late stages of the service life of the silicon photonic module, it may not be able to meet the module's required indicators. In addition, the need to make LUTs during the production process will reduce production efficiency and increase time costs.

[0011] In addition, the optical power regulation technology based on current control can also be used. Current control is another common method for regulating the output power of the laser. The output power of the laser can be controlled by adjusting the injection current of the laser; however, since the relationship between current and laser power is usually nonlinear and is greatly affected by factors such as temperature and aging, it is difficult to achieve accurate power regulation by current control alone, especially in high-speed optical communication systems, which require more complex circuits to match current and power, and the regulation process may have lags. Summary of the invention

[0012] The object of the present invention is to provide a method, system and medium for regulating the optical power of a silicon photonic module over all temperatures, which are used to solve the problem of low optical power regulation efficiency of the silicon photonic module.

[0013] The present invention is achieved through the following technical solutions:

[0014] A method for adjusting the optical power of a silicon photonic module at all temperatures, comprising:

[0015] S1. Get the current temperature T of the silicon photonic module;

[0016] S2. Calculate the target value using linear interpolation based on the current temperature and the voltage setting value of the temperature close to the current temperature;

[0017] S3. respectively collect the forward optical power value of a certain optical channel in the silicon photonic module and the corresponding laser output optical power value in real time, and define the ratio of the two as the actual value;

[0018] S4. Calculate the absolute value of the difference between the target value and the actual value, and determine whether the absolute value is less than 10% of the target value;

[0019] S5. If not, adjust the voltage setting value and repeat S2-S4;

[0020] S6. If yes, then end the adjustment and output the target value.

[0021] Furthermore, the target value T Ratio The calculation formula is as follows:

[0022] T Ratio =TargetSet1+(T-T1)*(TargetSet2-TargetSet1) / (T2-T1);

[0023]

[0024] Wherein T1 and T2 are the two temperature values ​​closest to T in the temperature lookup table, and T1<T<T2, TargetSet1 is the voltage setting value corresponding to T1 in the temperature lookup table, TargetSet2 is the voltage setting value corresponding to T2 in the temperature lookup table, PDF1 and PD1 are the forward optical power value and the laser output optical power value of the modulator at the temperature point T1; PDF2 and PD2 are the forward optical power value and the laser output optical power value of the modulator at the temperature point T2.

[0025] Furthermore, the actual value C Ratio The calculation formula is as follows:

[0026]

[0027] Wherein, is the forward optical power of the nth optical channel in the current silicon photonic module, and is the laser output optical power of the nth optical channel in the current silicon photonic module.

[0028] Furthermore, the step of adjusting the voltage setting value specifically includes:

[0029] S51. If the target value is greater than the actual value, the voltage setting value is lowered and the split ratio setting value of the splitter is increased;

[0030] S52. If the target value is greater than the actual value, the voltage setting value is increased and the split ratio setting value of the splitter is decreased.

[0031] A silicon photonic module full-temperature optical power regulation system, comprising a silicon photonic module and a processing module, wherein the silicon photonic module is used to receive laser light output by a light source and output a regulated optical signal;

[0032] The processing module is used to generate a voltage regulation control signal and a target value, wherein the voltage regulation control signal is sent to the silicon photonic module to control the voltage regulation timing of the silicon photonic module; the target value is the voltage target value of the optical signal after adjustment by the silicon photonic module.

[0033] Furthermore, the silicon photonic module is composed of four groups of optical processing units, and the optical processing unit includes a splitter and two modulators, wherein the splitter is used to split the laser into two beams of direct current light, and the two beams of direct current light enter a modulator respectively, and the modulator is electrically connected to the processing module;

[0034] A photoresistor PD is disposed at the front end of any modulator, and a photoresistor PDF is disposed at the rear end of any modulator.

[0035] Furthermore, the modulator includes a differential modulation unit and a phase adjustment unit, the differential modulation unit is used to modulate the differential signal into the DC light to form a modulated optical signal; the phase adjustment unit is used to receive the control signal of the processing module and perform voltage adjustment on the modulated optical signal.

[0036] An electronic device comprises: a processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor and the memory communicate through the bus, and the machine-readable instructions are executed by the processor to execute the steps of a method for regulating the full-temperature optical power of a silicon photonic module.

[0037] A computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of a method for regulating the full-temperature optical power of a silicon photonic module are executed.

[0038] The technical solution of the present invention has at least the following advantages and beneficial effects:

[0039] The present invention discloses a full-temperature optical power regulation method, system and medium for silicon photonic modules, which can accurately monitor the output power of light source lasers through accurate real-time monitoring and regulation mechanisms. Compared with the temperature control, current control and other methods in the prior art, the present invention provides a more stable and accurate regulation method, significantly reducing power fluctuations, thereby ensuring the stability of signal transmission and the reliability of the system.

[0040] In addition, by adopting a faster feedback mechanism, the system can quickly adjust when the optical power changes, reducing the impact of power lag on system performance. It is especially suitable for high-speed and high-frequency optical communication systems and can ensure high-quality data transmission.

[0041] In addition, this method can effectively adjust the optical power in real time. It can maintain the stability of the optical power under a wider range of environmental conditions and avoid signal loss, distortion or reception error caused by too low or too high power, thereby improving the stability and overall reliability of the silicon photonic module.

[0042] In addition, this method is more efficient, can reduce unnecessary power consumption, and due to its simplified structure, it is cheaper than traditional temperature control, current regulation and other solutions. This makes the silicon photonic module not only superior in performance, but also more cost-effective, and can be widely used in various optical communication scenarios; and this system is compatible with existing silicon photonic module designs and can be seamlessly integrated into existing optical communication systems, with strong market adaptability and broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 A method flow chart of the present invention;

[0044] Figure 2 The figure is a schematic diagram of a system structure of the present invention. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0048] In the description of the present invention, it should be noted that if the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the application is usually placed when used. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0049] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] Example 1

[0051] As attached Figure 1 A method for adjusting the full-temperature optical power of a silicon photonic module is shown, specifically comprising:

[0052] S1. Get the current temperature T of the silicon photonic module;

[0053] S2. Calculate the target value using linear interpolation based on the current temperature and the voltage setting value of the temperature close to the current temperature;

[0054] During the production process of silicon photonic modules, a LUT lookup table is pre-set, and the lookup table is composed of preset temperatures and voltage setting values ​​corresponding to each temperature. Therefore, since only the preset multiple temperature values ​​in the lookup table have accurate corresponding voltage setting values, and not all voltage setting values ​​are covered, the target value of the current temperature is calculated by linear interpolation, and then the rationality of the target value is determined according to the subsequent steps.

[0055] In addition, the target value T is calculated by linear interpolation. Ratio The calculation formula is as follows:

[0056] T Ratio =TargetSet1+(T-T1)*(TargetSet2-TargetSet1) / (T2-T1);

[0057]

[0058] Wherein T1 and T2 are the two temperature values ​​closest to T in the temperature lookup table, and T1<T<T2, TargetSet1 is the voltage setting value corresponding to T1 in the temperature lookup table, TargetSet2 is the voltage setting value corresponding to T2 in the temperature lookup table, PDF1 and PD1 are the forward optical power value and the laser output optical power value of the modulator at the temperature point T1; PDF2 and PD2 are the forward optical power value and the laser output optical power value of the modulator at the temperature point T2.

[0059] S3. Collect the forward optical power PDF of the silicon photonic module n The monitoring value of the laser output optical power PD n The monitoring value of the two is defined as the actual value;

[0060] Actual value C Ratio The calculation formula is as follows:

[0061]

[0062] S4. Calculate the absolute value of the difference between the target value and the actual value, and determine whether the absolute value is less than 10% of the target value;

[0063] The formula is: |T Ratio -C Ratio |<T Ratio *10%

[0064] S5. If not, adjust the voltage setting value and repeat S2-S4;

[0065] S6. If yes, then the adjustment is terminated and the target value is output, that is, the current adjustment process is directly exited to avoid frequent adjustments, which may lead to excessive noise in the optical path, thereby affecting the quality of the optical path signal;

[0066] In addition, this method is a method for adjusting an optical channel. The adjustment is ended in S6 to obtain the corresponding reasonable target value under the current temperature T, and then the silicon photonic module is controlled to reach the reasonable target value voltage. It should be noted that since the silicon photonic module has multiple optical channels, this method needs to be used for voltage adjustment for each optical channel, that is, the above process needs to be run throughout the life cycle of the silicon photonic module to ensure that the performance of the silicon photonic module is always in the best state.

[0067] Moreover, S3-S4 is the feedback control algorithm part of this method, which can detect power fluctuations in a very short time and make adjustment decisions quickly. This efficient feedback control system significantly improves the system response speed, avoids the hysteresis problem in traditional methods, and the faster feedback mechanism enables the system to quickly adjust when the optical power changes, reducing the impact of power hysteresis on system performance. It is especially suitable for high-speed and high-frequency optical communication systems, and can ensure high-quality data transmission.

[0068] According to the needs, the step of adjusting the voltage setting value specifically includes:

[0069] S51. If the target value is greater than the actual value, the voltage setting value is lowered and the split ratio setting value of the splitter is increased;

[0070] S52. If the target value is greater than the actual value, the voltage setting value is increased and the split ratio setting value of the splitter is reduced;

[0071] It should be noted that the voltage setting value can be adjusted in multiple steps, such as increasing or decreasing by 0.005V each step, to avoid excessive adjustment at one time that may cause signal instability.

[0072] In addition, this method uses real-time temperature processing, so it can maintain the stability of optical power under a wider range of environmental conditions, avoiding signal loss, distortion or reception errors caused by too low or too high power, thereby improving the stability and overall reliability of the silicon photonic module; it is also more efficient and can reduce unnecessary power consumption, and due to its simplified structure, it is lower in cost than traditional temperature control, current regulation and other solutions. This makes the silicon photonic module not only superior in performance, but also more cost-effective, and can be widely used in various optical communication scenarios.

[0073] Example 2

[0074] As attached Figure 2 A silicon photonic module full-temperature optical power regulation system is shown, comprising a silicon photonic module and a processing module, wherein the silicon photonic module is used to receive laser light output by a light source and output a regulated optical signal;

[0075] The processing module is used to generate a voltage regulation control signal and a target value, wherein the voltage regulation control signal is sent to the silicon photonic module to control the voltage regulation timing of the silicon photonic module; the target value is the voltage target value of the optical signal after the silicon photonic module regulates the voltage;

[0076] The voltage regulation of the optical signal in the silicon photonic module is ultimately intended to adjust the voltage of the optical signal to a target voltage, and the target value is obtained by the processing module according to the adjustment method shown in the above embodiment 1. The processing module then controls the adjustment components in the silicon photonic module, such as the phase adjustment part of the modulator, according to the target value.

[0077] Example 3

[0078] The silicon photonic module is composed of four groups of optical processing units, each of which includes a splitter and two modulators, wherein the splitter is used to split the laser into two beams of direct current light, and the two beams of direct current light enter a modulator respectively, and the modulator is electrically connected to the processing module;

[0079] A photoresistor PD is provided at the front end of any of the modulators, and a photoresistor PDF is provided at the rear end of any of the modulators, wherein the optical power value measured by the photoresistor PD is the optical power value output by the laser; the optical power value measured by the photoresistor PDF is the forward optical power value;

[0080] The photoresistor PD and the photoresistor PDF are used to monitor the optical power at each node of each modulator.

[0081] In addition, the modulator includes a differential modulation unit and a phase adjustment unit, and the differential modulation unit is used to convert TXm S + and TXm S -The differential signal is modulated into the DC light to form a modulated optical signal;

[0082] The phase adjustment unit is used to adjust the voltage setting value of the modulated DC light, and the phase adjustment unit is usually a tiny heating element integrated on the silicon photonic chip, which can effectively adjust the operating temperature of these devices, thereby achieving precise control and stabilization of the optical properties. The phase adjustment unit is electrically connected to the processing module, and the heater signal of the phase adjustment unit will change under the influence of the processing module, thereby achieving the final optical power adjustment of the silicon photonic module.

[0083] Example 4

[0084] An electronic device comprises: a processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor and the memory communicate through the bus, and the machine-readable instructions are executed by the processor to execute the steps of a method for regulating the full-temperature optical power of a silicon photonic module.

[0085] Example 5

[0086] A computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of a method for regulating the full-temperature optical power of a silicon photonic module are executed.

[0087] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for adjusting the optical power of a silicon photonic module at all temperatures, comprising: S1. Get the current temperature T of the silicon photonic module; S2. Calculate the target value using linear interpolation based on the current temperature and the voltage setting value of the temperature close to the current temperature; S3. respectively collect the forward optical power value of a certain optical channel in the silicon photonic module and the corresponding laser output optical power value in real time, and define the ratio of the two as the actual value; S4. Calculate the absolute value of the difference between the target value and the actual value, and determine whether the absolute value is less than 10% of the target value; S5. If not, adjust the voltage setting value and repeat S2-S4; S6. If yes, then end the adjustment and output the target value.

2. The method for adjusting the full-temperature optical power of a silicon photonic module according to claim 1, characterized in that: The target value T Ratio The calculation formula is as follows: TRatioTargetSet1+(T-T1)*(TargetSet2-TargetSet1) / (T2-T1); Wherein T1 and T2 are the two temperature values ​​closest to T in the temperature lookup table, and T1<T<T2, TargetSet1 is the voltage setting value corresponding to T1 in the temperature lookup table, TargetSet2 is the voltage setting value corresponding to T2 in the temperature lookup table, PDF1 and PD1 are the forward optical power value and the laser output optical power value of the modulator at the temperature point T1; PDF2 and PD2 are the forward optical power value and the laser output optical power value of the modulator at the temperature point T2.

3. The method for adjusting the full-temperature optical power of a silicon photonic module according to claim 1, characterized in that: The actual value C Ratio The calculation formula is as follows: PDF n is the forward optical power of the nth optical channel in the current silicon photonic module, PD n It is the laser output optical power of the nth optical channel in the current silicon photonic module.

4. The method for adjusting the full-temperature optical power of a silicon photonic module according to claim 1, characterized in that: The step of adjusting the voltage setting value specifically includes: S51. If the target value is greater than the actual value, the voltage setting value is lowered and the split ratio setting value of the splitter is increased; S52. If the target value is greater than the actual value, the voltage setting value is increased and the split ratio setting value of the splitter is decreased.

5. A full-temperature optical power regulation system for a silicon optical module, comprising a silicon optical module and a processing module, wherein the silicon optical module is used to receive a laser output by a light source and output a regulated optical signal; The processing module is used to generate a voltage regulation control signal and a target value, wherein the voltage regulation control signal is sent to the silicon photonic module to control the voltage regulation timing of the silicon photonic module; the target value is the voltage target value of the optical signal after adjustment by the silicon photonic module.

6. The full-temperature optical power regulation system for silicon photonic modules according to claim 5, characterized in that: The silicon photonic module is composed of four groups of optical processing units, each of which includes a splitter and two modulators, wherein the splitter is used to split the laser into two beams of direct current light, and the two beams of direct current light enter a modulator respectively, and the modulator is electrically connected to the processing module; A photoresistor PD is disposed at the front end of any modulator, and a photoresistor PDF is disposed at the rear end of any modulator.

7. The full-temperature optical power regulation system for silicon photonic modules according to claim 6, characterized in that: The modulator includes a differential modulation part and a phase adjustment part. The differential modulation part is used to modulate the differential signal into the DC light to form a modulated optical signal. The phase adjustment part is used to receive the control signal of the processing module and perform voltage adjustment on the modulated optical signal.

8. An electronic device comprising: A processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the memory communicate through the bus. When the processor is running, the machine-readable instructions execute the steps of the full-temperature optical power regulation method for silicon photonic modules as described in claims 1-4.

9. A computer-readable storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, performs the steps of the method for adjusting the full-temperature optical power of a silicon photonic module as described in claims 1-4.

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