Organic light emitting display device and method of manufacturing same

Abstract

The invention discloses an organic light emitting display device and a method of manufacturing the same. The manufacturing method comprises the steps of forming an auxiliary cathode layer, a first partition layer and a second partition layer on a first insulating layer, forming an organic light-emitting layer, a cathode and a first thin film packaging layer on an upper layer of an anode, and removing the second partition layer and the organic light-emitting layer, the cathode and the first thin film packaging layer above the second partition layer. And forming a second thin film encapsulation layer on the first thin film encapsulation layer. According to the organic light-emitting display device and the manufacturing method thereof provided by the embodiment of the invention, the whole prepared organic light-emitting layer is segmented through the first partition layer and the second partition layer, so that a smaller pixel size and a higher resolution ratio are realized, and the manufacturing cost is lower; furthermore, the second partition layer influencing light emission is removed, so that light is prevented from being reflected on the side wall of the second partition layer, the scattering phenomenon generated on the side wall of the second partition layer is eliminated, and the display effect is improved.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an organic light emitting display device and a manufacturing method thereof. Background Art

[0002] An organic light emitting display device is a display device that uses organic light emitting diodes (OLED) as display pixels. Compared with traditional liquid crystal display devices, organic light emitting display devices have many advantages such as self-luminescence, low power consumption, good color effects, and can be used for flexible displays, and are becoming more and more popular in the market.

[0003] In the prior art, in the manufacturing process of an OLED display device, an open mask or a fine metal mask (FMM) is used to evaporate the organic light-emitting layer.

[0004] Among them, an open mask refers to a mask with a larger opening area, which is suitable for forming a film layer with a larger coverage area on a substrate. When the organic light-emitting layer is evaporated through the open mask, the opening of the open mask can correspond to the entire display area of ​​the display device, so that the organic light-emitting layer formed by evaporation covers the entire display area of ​​the display device.

[0005] In a display device that uses an open mask to evaporate an organic light-emitting layer, the organic light-emitting layers corresponding to all pixels are made of the same organic material. The organic light-emitting layers usually emit white light, and color image display is achieved by combining with a color filter (CF). However, the color gamut of the color filter will limit the color gamut range of the display panel, thereby affecting the final display effect of the display device.

[0006] The fine metal mask (FMM) has hollow openings that match the pixel size, and organic materials can be accurately deposited in the corresponding pixel areas through these hollow openings.

[0007] In a display device that uses a fine metal mask to evaporate an organic light-emitting layer, organic materials of different colors are separately evaporated through the fine metal mask to form organic light-emitting layers corresponding to pixels of different colors. Since the fine metal mask itself has manufacturing deviations, alignment deviations and thermal deformation problems, the film-forming position of the organic light-emitting layer may deviate greatly from the preset position. In addition, the cost of the fine metal mask is relatively high, resulting in a high manufacturing cost of the display device. Therefore, for high-resolution micro display devices, due to the limitation of process difficulty, it is difficult for the fine metal mask to achieve the size of ultra-small metal hollow openings. Summary of the invention

[0008] The present invention provides an organic light emitting display device and a manufacturing method thereof, so as to accurately form an organic light emitting layer of a corresponding color in each pixel area, while reducing the cost and improving the display effect.

[0009] According to one aspect of the present invention, a method for manufacturing an organic light emitting display device is provided, the manufacturing method comprising:

[0010] Providing a substrate, the substrate comprising a plurality of pixel regions arranged at intervals;

[0011] forming an anode in the plurality of pixel regions;

[0012] forming a first insulating layer between the pixel regions;

[0013] forming an auxiliary cathode layer, a first partition layer and a second partition layer on the first insulating layer, wherein the first partition layer is located on the upper layer of the auxiliary cathode layer, the second partition layer is located on the upper layer of the first partition layer, and the edges of the first partition layer and the second partition layer both exceed the edge of the auxiliary cathode layer;

[0014] Forming an organic light-emitting layer, a cathode and a first thin-film encapsulation layer on the upper layer of the anode, wherein the cathode is located on the upper layer of the organic light-emitting layer, and the first thin-film encapsulation layer is located on the upper layer of the cathode;

[0015] removing the second partition layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second partition layer;

[0016] A second thin film encapsulation layer is formed on the first thin film encapsulation layer, and the second thin film encapsulation layer covers the first isolation layer.

[0017] Optionally, the thickness of the first barrier layer is less than or equal to the thickness of the second barrier layer.

[0018] Optionally, the thickness of the first barrier layer is 20 nm to 100 nm.

[0019] Optionally, the material of the first insulating layer is different from the material of the second insulating layer.

[0020] Optionally, the material of the first barrier layer includes at least one of aluminum oxide, titanium oxide, silicon nitride, titanium nitride and hafnium oxide.

[0021] Optionally, the ratio of the refractive index of the first barrier layer to the refractive index of the first thin-film encapsulation layer is 0.7-1.

[0022] Optionally, a material of the first isolation layer is the same as a material of the first thin-film encapsulation layer.

[0023] Optionally, a material of the first thin-film encapsulation layer is the same as a material of the second thin-film encapsulation layer.

[0024] Optionally, a vertical projection of the first partition layer on the substrate covers a vertical projection of the second partition layer on the substrate.

[0025] Optionally, a ratio of a width of the first partition layer to a width of the auxiliary cathode layer is greater than or equal to 1.6.

[0026] Optionally, the material of the first barrier layer is different from the material of the auxiliary cathode layer.

[0027] Optionally, removing the second partition layer and the organic light-emitting layer, the cathode, and the first thin-film encapsulation layer above the second partition layer includes:

[0028] The second partition layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second partition layer are removed by a reactive ion etching process or a plasma etching process.

[0029] Optionally, forming a second thin film encapsulation layer on the first thin film encapsulation layer includes:

[0030] forming a second thin film encapsulation material layer on the first thin film encapsulation layer;

[0031] Etching the second thin film encapsulation material layer to form the second thin film encapsulation layer;

[0032] The height difference between the upper surface of the second thin film encapsulation layer in the pixel area and the upper surface of the second thin film encapsulation layer between the pixel areas is less than or equal to 0.1 μm, or the height difference between the upper surface of the second thin film encapsulation layer and the upper surface of the first thin film encapsulation layer is less than or equal to 0.1 μm.

[0033] Optionally, etching the second thin film encapsulation material layer to form the second thin film encapsulation layer includes:

[0034] forming a planarization layer on the second thin film encapsulation material layer;

[0035] The planarization layer and the second thin film encapsulation material layer are etched to form the second thin film encapsulation layer.

[0036] Optionally, etching the second thin film encapsulation material layer to form the second thin film encapsulation layer includes:

[0037] The second thin film encapsulation material layer is etched by a chemical mechanical polishing process to form the second thin film encapsulation layer.

[0038] Optionally, the plurality of pixel regions include at least two types of pixel regions, the organic light-emitting layer includes at least two types of organic light-emitting layers, and the organic light-emitting layers of different types are used to emit light of different colors;

[0039] An organic light-emitting layer, a cathode and a first thin-film encapsulation layer are formed on the upper layer of the anode, including:

[0040] The organic light-emitting layer, the cathode and the first thin-film encapsulation layer of corresponding types are formed on the upper layer of the anode in the pixel regions of different types.

[0041] Optionally, the at least two types of pixel regions include a first type of pixel region, a second type of pixel region and a third type of pixel region, and the at least two types of organic light-emitting layers include a first type of organic light-emitting layer, a second type of organic light-emitting layer and a third type of organic light-emitting layer;

[0042] Forming the organic light-emitting layer, the cathode and the first thin-film encapsulation layer of corresponding types on the upper layer of the anode in different types of pixel regions, respectively, comprises:

[0043] Sequentially forming a first organic light-emitting material layer, a first cathode material layer and a first thin-film encapsulation material layer on the upper layer of the anode;

[0044] Etching the first organic light-emitting material layer, the first cathode material layer and the first thin-film encapsulation material layer to form the first organic light-emitting layer, the cathode and the first thin-film encapsulation layer on the upper layer of the anode in the first pixel region;

[0045] Sequentially forming a second organic light-emitting material layer, a second cathode material layer, and a second thin-film encapsulation material layer on the upper layer of the anode;

[0046] Etching the second organic light-emitting material layer, the second cathode material layer and the second thin-film encapsulation material layer to form the second organic light-emitting layer, the cathode and the first thin-film encapsulation layer on the upper layer of the anode in the second pixel region;

[0047] Sequentially forming a third organic light-emitting material layer, a third cathode material layer and a third thin-film encapsulation material layer on the upper layer of the anode;

[0048] The third organic light-emitting material layer, the third cathode material layer and the third thin-film encapsulation material layer are etched to form the third organic light-emitting layer, the cathode and the first thin-film encapsulation layer on the anode upper layer in the third pixel region.

[0049] According to another aspect of the present invention, an organic light emitting display device is provided, which is manufactured by using any one of the manufacturing methods of the organic light emitting display device described in the first aspect.

[0050] According to another aspect of the present invention, there is provided an organic light emitting display device, comprising:

[0051] A substrate, the substrate comprising a plurality of pixel areas arranged at intervals; an anode arranged in the pixel area; a first insulating layer arranged between the pixel areas; an auxiliary cathode layer arranged on the first insulating layer; a first isolation layer arranged on the auxiliary cathode layer, the edge of the first isolation layer exceeds the edge of the auxiliary cathode layer; an organic light-emitting layer arranged on the anode, the organic light-emitting layers in adjacent pixel areas are separated from each other by the first isolation layer; a cathode arranged on the organic light-emitting layer, the cathode and the adjacent auxiliary cathode layer are electrically connected; a first thin film encapsulation layer arranged on the cathode, the first thin film encapsulation layer covers the cathode and exposes the first isolation layer; a second thin film encapsulation layer arranged on the first thin film encapsulation layer, the second thin film encapsulation layer covers the first thin film encapsulation layer and the first isolation layer.

[0052] The organic light-emitting display device and the manufacturing method thereof provided by the embodiment of the present invention are provided by stacking an auxiliary cathode layer, a first partition layer and a second partition layer on the anode and the first insulating layer, and making the edges of the first partition layer and the second partition layer both exceed the edges of the auxiliary cathode layer, so that the edge portions of the first partition layer and the second partition layer form an eaves structure above the edge of the auxiliary cathode layer. When the organic light-emitting layer is subsequently prepared, the eaves structure can divide the entire layer of the prepared organic light-emitting layer, and the organic light-emitting layer of the corresponding color can be accurately formed in each pixel area without using a traditional fine metal mask, so as to achieve a smaller pixel size and a higher resolution, and the manufacturing cost is lower. Furthermore, after the organic light-emitting layer, the cathode and the first thin film encapsulation layer are formed on the upper layer of the anode, the second partition layer and the organic light-emitting layer, the cathode and the first thin film encapsulation layer above the second partition layer are removed to avoid the reflection of light on the side wall of the second partition layer, thereby eliminating the scattering phenomenon generated on the side wall of the second partition layer, preventing the formation of a light scattering area, improving the display effect, and avoiding the absorption of light by the second partition layer, thereby improving the light extraction efficiency. At the same time, a second thin film encapsulation layer is formed on the first thin film encapsulation layer, and the second thin film encapsulation layer covers the first isolation layer to fill the deep pits formed when the second isolation layer is removed, forming a continuous encapsulation structure to ensure the integrity and stability of the thin film encapsulation.

[0053] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0055] Figure 1 A schematic diagram of a process of manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0056] Figure 2-Figure 16 A schematic diagram of the process structure of a method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0057] Fig.17 A schematic diagram of a partial cross-sectional structure of a substrate provided in an embodiment of the present invention;

[0058] Fig.18 A schematic structural diagram of an organic light emitting display device provided by an embodiment of the present invention;

[0059] Fig.19 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art;

[0060] Fig. 20 A schematic diagram of a partial display effect of an organic light emitting display device in the related art;

[0061] Fig.21 A schematic diagram of a partial display effect of an organic light emitting display device provided by an embodiment of the present invention;

[0062] Fig. 22 A schematic diagram of the structure of another process of manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0063] Fig.23 A schematic diagram of the structure of a process of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0064] Fig.24 A schematic diagram of the structure of a process of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention;

[0065] Fig.25 A schematic diagram of a partial cross-sectional structure of an organic light emitting display device provided by an embodiment of the present invention;

[0066] Fig.26 A schematic diagram of a film layer structure of a pixel provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0067] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0068] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0069] Figure 1 A schematic diagram of a method for manufacturing an organic light emitting display device according to an embodiment of the present invention is provided. Figure 2-Figure 16 A schematic diagram of the process structure of a method for manufacturing an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 1-Figure 16 As shown, the manufacturing method provided by the embodiment of the present invention includes:

[0070] S101, providing a substrate, wherein the substrate includes a plurality of pixel regions arranged at intervals.

[0071] Specifically, Figure 2 As shown, the substrate 10 may be a driving substrate, and a plurality of pixel regions 101 arranged in an array are defined on the substrate 10. In the direction of rows or columns, adjacent pixel regions are pixels emitting light of different colors.

[0072] For example, Figure 2 As shown, in the row direction, the pixel area 101 can be divided into a first type of pixel area 101A, a second type of pixel area 101B and a third type of pixel area 101C. The first type of pixel area 101A, the second type of pixel area 101B and the third type of pixel area 101C can be used to emit red light, green light and blue light, respectively, but are not limited to this. In some embodiments, the pixel area 101 can also be additionally provided with a pixel area for emitting white light or other colors of light, and the embodiments of the present invention do not specifically limit this.

[0073] Fig.17A schematic diagram of a partial cross-sectional structure of a substrate provided in an embodiment of the present invention is shown in FIG. Fig.17 As shown, optionally, the substrate 10 includes a substrate 30, on which a driving transistor T corresponding to the pixel area 101 is arranged, and the driving transistor T is used to be connected to an anode (not shown in the figure). The driving transistor T can provide a working signal corresponding to the luminous brightness to the pixel through the anode to drive the pixel to emit light.

[0074] The driving transistor T may include an active region T1 , a gate T2 , and a source-drain electrode layer T3 that are stacked. The active region T1 may be formed in the substrate 30 , but is not limited thereto. The embodiment of the present invention does not specifically limit this.

[0075] S102, forming anodes in a plurality of pixel regions.

[0076] Specifically, Figure 3 As shown, an anode 11 is formed in a pixel area 101 on a substrate 10, and the anodes 11 corresponding to each pixel area 101 are arranged in an electrically isolated manner. The anode 11, as an electrode of the pixel, can inject carriers (such as holes) into the pixel under the drive of a positive voltage of an external power supply.

[0077] S103 , forming a first insulating layer between pixel regions.

[0078] Specifically, Figure 4 As shown, a first insulating material layer 120 may be deposited entirely on the anode 11 .

[0079] like Figure 5 As shown, the first insulating material layer 120 can be etched by exposure, development and etching to form a first insulating layer 12 , and the first insulating layer 12 is located between adjacent pixel regions 101 .

[0080] The first insulating material layer 120 may be etched by photolithography or chemical mechanical polishing (CMP), but is not limited thereto.

[0081] like Figure 5 As shown, in the lateral direction, the first insulating layer 12 is located between two adjacent anodes 11, which helps to ensure electrical insulation between the two adjacent anodes 11. At the same time, since the anode 11 has a certain thickness, a pit is formed between the two anodes 11. Filling the first insulating layer 12 between the two adjacent anodes 11 is also beneficial to reducing the height difference between the area where the anode 11 is located and the area where the pit is located, so that the subsequent film layer can be prepared on a relatively flat surface, thereby ensuring the continuity of the subsequent film layer.

[0082] Among them, the material of the first insulating material layer 120 (that is, the material of the first insulating layer 12) can include at least one of silicon oxide and silicon nitride. Both silicon oxide and silicon nitride have high resistivity, which can make the first insulating layer 12 formed by etching the first insulating material layer 120 play a good insulating role between adjacent anodes 11. At the same time, silicon oxide and silicon nitride also have strong chemical stability and excellent high-temperature stability, are not easily corroded by moisture, oxygen and other harmful gases in the environment, and can maintain good insulation properties in high-temperature environments, which is beneficial to extend the service life of the device.

[0083] S104, forming an auxiliary cathode layer, a first isolation layer and a second isolation layer on the first insulating layer, wherein the first isolation layer is located on the auxiliary cathode layer, the second isolation layer is located on the first isolation layer, and the edges of the first isolation layer and the second isolation layer both exceed the edges of the auxiliary cathode layer.

[0084] Specifically, Figure 6 As shown, the auxiliary cathode material layer 130 , the first partition material layer 140 and the second partition material layer 150 may be deposited in sequence on the first insulating layer 12 .

[0085] like Figure 7 As shown, the auxiliary cathode material layer 130 , the first partition material layer 140 and the second partition material layer 150 can be etched by exposure, development and etching to form an auxiliary cathode layer 13 , a first partition layer 14 and a second partition layer 15 located between adjacent pixel regions 101 .

[0086] like Figure 8 As shown, the sidewall of the auxiliary cathode layer 13 is etched so that the edges of the first barrier layer 14 and the second barrier layer 15 are both beyond the edge of the auxiliary cathode layer 13 .

[0087] Among them, a suitable etching gas or liquid can be selected for the auxiliary cathode layer 13 so that the etching speed of the auxiliary cathode layer 13 is much greater than the etching speed of the first isolation layer 14 and the second isolation layer 15, so that the side wall of the auxiliary cathode layer 13 is etched preferentially, and the side wall of the auxiliary cathode layer 13 is recessed inward, so that the edges of the first isolation layer 14 and the second isolation layer 15 exceed the edges of the auxiliary cathode layer 13. At this time, the edge portions of the first isolation layer 14 and the second isolation layer 15 form an eaves structure above the edge of the auxiliary cathode layer 13.

[0088] It should be noted that the auxiliary cathode layer 13, the first isolation layer 14 and the second isolation layer 15 are arranged around the pixel area 101, and the area defined by the opening formed by the auxiliary cathode layer 13, the first isolation layer 14 and the second isolation layer 15 can be any shape such as a rectangle, a polygon or a circle, and the embodiment of the present invention does not make specific limitations on this.

[0089] S105 , forming an organic light-emitting layer, a cathode and a first thin-film encapsulation layer on the upper layer of the anode, wherein the cathode is located on the upper layer of the organic light-emitting layer, and the first thin-film encapsulation layer is located on the upper layer of the cathode.

[0090] Specifically, Fig.18 A schematic diagram of the structure of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 9-Figure 14 as well as Fig.18 As shown, when the organic light-emitting layer 16 is prepared, the eaves structure at the edges of the first partition layer 14 and the second partition layer 15 will block part of the upper surface of the first insulating layer 12, thereby forming a blocking area under the eaves structure at the edges of the first partition layer 14 and the second partition layer 15, and the organic light-emitting layer 16 is partially deposited on the upper surface of the second partition layer 15, and partially deposited on the upper surfaces of the first insulating layer 12 and the anode 11, but the organic light-emitting layer 16 cannot be deposited in the blocking area, thereby cutting off the organic light-emitting layer 16 at the blocking area, so that the organic light-emitting layer 16 deposited on the upper surface of the second partition layer 15 and the organic light-emitting layer 16 deposited on the upper surface of the first insulating layer 12 and the anode 11 cannot form a connection at the blocking area and are disconnected.

[0091] In this way, the entire prepared organic light-emitting layer 16 is divided by the first isolation layer 14, the second isolation layer 15 and the auxiliary cathode layer 13, and the organic light-emitting layer 16 of the corresponding color can be accurately formed in each pixel area 101 without using a traditional fine metal mask (Fine Metal Mask, FMM), and the organic light-emitting layer 16 is separated between each pixel area 101, thereby avoiding the problem that the film forming position of the organic light-emitting layer deviates greatly from the preset position due to the production deviation, alignment deviation and thermal deformation of the fine metal mask itself, thereby achieving a smaller pixel size and higher resolution with lower manufacturing cost.

[0092] In the organic light-emitting display device provided by the embodiment of the present invention, the size of the pixel region 101 can reach 2 μm to 3 μm, which can meet the user's demand for high resolution of the organic light-emitting display device.

[0093] Continue to refer Figure 9-Figure 14 When the organic light-emitting layer 16 is formed on the anode 11, a cathode 17 can also be formed on the organic light-emitting layer 16, so that the anode 11 and the cathode 17 are respectively located on both sides of the organic light-emitting layer 16, and the cathode 17 is used to provide electrons to the organic light-emitting layer 16. When electrons and holes are respectively injected from the cathode 17 and the anode 11 into the organic light-emitting layer 16, the electrons and holes recombine in the organic light-emitting layer 16 to release energy and emit light. The material of the organic light-emitting layer 16 can determine the light-emitting color of the organic light-emitting layer 16.

[0094] When preparing the cathode 17, the cathode 17 may also be disconnected in the shielding area under the eaves structure at the edge of the first partition layer 14 and the second partition layer 15, wherein the principle of the cathode 17 being cut off is the same as the principle of the organic light-emitting layer 16 being cut off, which will not be repeated here.

[0095] Furthermore, if the cathodes 17 of the pixel regions 101 are insulated from each other, the cathodes 17 of the pixel regions 101 need to be connected to power supply lines of the cathodes 17 respectively, which complicates wiring and increases costs.

[0096] Therefore, in this embodiment, the auxiliary cathode layer 13 can be made of conductive material, that is, the auxiliary cathode layer 13 is a conductor. When preparing the cathode 17, the cathode 17 of each pixel area 101 is electrically connected to the auxiliary cathode layer 13, so that the cathode 17 of each pixel area 101 can be electrically connected via the auxiliary cathode layer 13, and then the cathode 17 can be connected to the power supply line of the cathode 17 at the periphery of the display area to realize the power supply of the cathode 17 of all pixel areas 101, which helps to simplify the wiring structure and reduce costs.

[0097] Optionally, the material of the auxiliary cathode layer 13 includes one or more of aluminum (Al), molybdenum (Mo) and titanium (Ti).

[0098] Among them, Al, Mo and Ti have relatively high electrical conductivity. The auxiliary cathode layer 13 is made of metal materials such as Al, Mo or Ti, which helps to reduce ohmic loss and inhibit the reduction of the potential on the cathode.

[0099] In other embodiments, the auxiliary cathode layer 13 may also be made of other metal materials to achieve good conductivity, which is not specifically limited in the embodiment of the present invention.

[0100] Continue to refer Figure 9-Figure 14 When the organic light-emitting layer 16 is formed on the upper layer of the anode 11, a first thin film encapsulation layer 18 can also be formed on the upper layer of the cathode 17. The first thin film encapsulation layer 18 can be used to protect the pixels in the pixel area 101 from water and oxygen, so as to prevent water vapor and oxygen from penetrating into the organic light-emitting display device, thereby avoiding the display problems caused thereby and enhancing the water and oxygen protection capability of the organic light-emitting display device.

[0101] S106, removing the second partition layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second partition layer.

[0102] Specifically, Fig.19 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art, Fig. 20 FIG. 1 is a schematic diagram of a partial display effect of an organic light emitting display device in the related art. Fig.19 and Fig. 20As shown, in the related art, usually only one partition layer is provided, and the partition layer is taken as the second partition layer 15 as an example for explanation. The inventor has found through research that in order to effectively isolate the organic light-emitting layer 16, the upper surface of the second partition layer 15 is usually higher than the upper surface of the cathode 17 in the pixel area 101. In some embodiments, the height sum of the auxiliary cathode layer 13 and the second partition layer 15 can reach 1μm. At this time, the large-angle light emitted by the organic light-emitting layer 16 in the pixel area 101 will be blocked by the second partition layer 15 and cannot be directly emitted. This part of the light is irradiated on the side wall of the second partition layer 15. On the one hand, it will continuously form reflections on the side wall of the second partition layer 15 to cause scattering, thereby forming a light scattering area 20 (such as Fig. 20 As shown in the figure, the existence of the light scattering region 20 may cause problems such as blurred display images and reduced contrast, thereby affecting the display quality; on the other hand, part of the light irradiated on the side wall of the second partition layer 15 may be absorbed by the second partition layer 15 and cannot be emitted, thereby causing a decrease in light extraction efficiency and affecting the display brightness of the organic light-emitting display device.

[0103] Based on the above technical problems, in this embodiment, two isolation layers are formed, namely the first isolation layer 14 and the second isolation layer 15. Fig.14 and Fig.15 As shown, the second barrier layer 15 is removed so that the large-angle light that would originally irradiate the side wall of the second barrier layer 15 will no longer be blocked by the second barrier layer 15, but can be emitted directly, thereby avoiding the light from being reflected on the side wall of the second barrier layer 15 and eliminating the scattering phenomenon generated on the side wall of the second barrier layer 15.

[0104] Fig.21 A schematic diagram of a partial display effect of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.21 As shown, by removing the second partition layer 15, the formation of a light scattering area can be avoided, thereby improving the display effect; in addition, the absorption of light by the second partition layer 15 can be avoided, thereby improving the light extraction efficiency.

[0105] Continue to refer Fig.14 and Fig.15When removing the second partition layer 15, the organic light-emitting layer 16, cathode 17 and first thin film encapsulation layer 18 above the second partition layer 15 are removed together, so that the film layer with a different refractive index from the first thin film encapsulation layer 18 above the first partition layer 14 (for example, the organic light-emitting layer 16 and cathode 17 located above the first partition layer 14) can be further reduced, thereby reducing the reflection of light at the interface between film layers with different refractive indices, helping to reduce scattering and improve display quality. At the same time, removing the organic light-emitting layer 16, cathode 17 and first thin film encapsulation layer 18 above the second partition layer 15 can also directly expose the surface of the second partition layer 15, reducing the difficulty of removing the second partition layer 15.

[0106] S107 , forming a second thin film encapsulation layer on the first thin film encapsulation layer, wherein the second thin film encapsulation layer covers the first isolation layer.

[0107] Specifically, Fig.16 As shown, a second thin film encapsulation layer 19 is formed on the first thin film encapsulation layer 18 to cover the retained first barrier layer 14, thereby filling the deep pit formed when the second barrier layer 15 is removed to form a continuous encapsulation structure, thereby ensuring the integrity and stability of the thin film encapsulation.

[0108] It should be noted that the sidewalls of the second partition layer 15 may have tiny defects, such as pits, protrusions, cracks, etc., due to non-uniformity in the manufacturing process, particle contamination or other reasons. In the subsequent thin film encapsulation process, other defects such as cavities or cracks may be formed at these defects, thereby affecting the encapsulation quality. Therefore, in an embodiment of the present invention, removing the second partition layer 15 can also eliminate these potential surface defects, so that the subsequently formed second thin film encapsulation layer 19 can be deposited more evenly and densely, reducing the generation of cavities and other defects, thereby improving the encapsulation effect, and can enhance the reliability and life of the organic light-emitting display device in a high temperature and high humidity environment.

[0109] In summary, the manufacturing method of the organic light-emitting display device provided by the embodiment of the present invention is to stack the auxiliary cathode layer, the first partition layer and the second partition layer on the anode and the first insulating layer, and make the edges of the first partition layer and the second partition layer exceed the edge of the auxiliary cathode layer, so that the edge parts of the first partition layer and the second partition layer form an eaves structure above the edge of the auxiliary cathode layer. When the organic light-emitting layer is prepared later, the eaves structure can divide the whole layer of the prepared organic light-emitting layer, and the organic light-emitting layer of the corresponding color can be accurately formed in each pixel area without using the traditional fine metal mask, so as to achieve a smaller pixel size and higher resolution, and the manufacturing cost is lower. Furthermore, after the organic light-emitting layer, the cathode and the first thin film encapsulation layer are formed on the upper layer of the anode, the second partition layer and the organic light-emitting layer, the cathode and the first thin film encapsulation layer above the second partition layer are removed to avoid the reflection of light on the side wall of the second partition layer, thereby eliminating the scattering phenomenon generated on the side wall of the second partition layer, preventing the formation of a light scattering area, improving the display effect, and avoiding the absorption of light by the second partition layer, thereby improving the light extraction efficiency. At the same time, a second thin film encapsulation layer is formed on the first thin film encapsulation layer, and the second thin film encapsulation layer covers the first isolation layer to fill the deep pits formed when the second isolation layer is removed, forming a continuous encapsulation structure to ensure the integrity and stability of the thin film encapsulation.

[0110] Continue to refer Fig.16 and Fig.18 Optionally, the plurality of pixel regions 101 include at least two types of pixel regions, and the organic light-emitting layer 16 includes at least two types of organic light-emitting layers, and different types of organic light-emitting layers 16 are used to emit light of different colors.

[0111] An organic light emitting layer, a cathode and a first thin film encapsulation layer are formed on the anode, including:

[0112] An organic light emitting layer, a cathode and a first thin film encapsulation layer of corresponding types are formed on the upper layers of the anodes in different types of pixel regions.

[0113] Specifically, at least two types of pixel regions 101 are provided corresponding to different colors, and different types of organic light-emitting layers 16 are provided in each type of pixel region 101, so that different types of pixel regions 101 can emit light of different colors to achieve color display.

[0114] Among them, in the direction of rows or columns, adjacent pixel areas 101 can be set as different types of pixel areas 101, then in the direction of rows or columns, the types of organic light-emitting layers 16 in adjacent pixel areas 101 are different, so that the light-emitting colors of the organic light-emitting layers 16 in adjacent pixel areas 101 are different, thereby achieving color display.

[0115] It should be noted that different types of organic light-emitting layers 16 may be made of different materials, so as to emit light of different colors.

[0116] Furthermore, if Figure 9-Figure 14 As shown, when the organic light-emitting layer 16, the cathode 17 and the first thin-film encapsulation layer 18 are formed on the upper layer of the anode 11, the corresponding types of organic light-emitting layers 16, cathode 17 and the first thin-film encapsulation layer 18 can be formed on the upper layer of the anode 11 in different types of pixel areas 101 through an etching process (for example, a photolithography process including exposure and development steps). While achieving color display, there is no need to use a fine metal mask (Fine Metal Mask, FMM), thereby avoiding the problem that the film forming position of the organic light-emitting material layer deviates greatly from the preset position due to the manufacturing deviation, alignment deviation and thermal deformation of the fine metal mask itself, thereby achieving a smaller pixel size and higher resolution with lower manufacturing cost.

[0117] Optional, such as Figure 2-Figure 14 as well as Fig.18 As shown, at least two types of pixel regions 101 include a first type of pixel region 101A, a second type of pixel region 101B and a third type of pixel region 101C, and at least two types of organic light-emitting layers 16 include a first type of organic light-emitting layer 16A, a second type of organic light-emitting layer 16B and a third type of organic light-emitting layer 16C.

[0118] The first type of organic light emitting layer 16A may be disposed in the first type of pixel region 101A, the second type of organic light emitting layer 16B may be disposed in the second type of pixel region 101B, and the third type of organic light emitting layer 16C may be disposed in the third type of pixel region 101C. The first type of organic light emitting layer 16A, the second type of organic light emitting layer 16B, and the third type of organic light emitting layer 16C may be made of different materials to emit light of different colors.

[0119] Optionally, the first type of organic light-emitting layer 16A, the second type of organic light-emitting layer 16B and the third type of organic light-emitting layer 16C can be used to emit red light, green light and blue light, respectively. Then the first type of pixel area 101A, the second type of pixel area 101B and the third type of pixel area 101C form a red pixel area, a green pixel area and a blue pixel area, respectively, to achieve a wide color range, but not limited to this. In some embodiments, the organic light-emitting layer 16 may further include an organic light-emitting layer of white or other colors in addition to the organic light-emitting layers of the above three colors. The embodiments of the present invention do not specifically limit this.

[0120] In this embodiment, corresponding types of organic light-emitting layers, cathodes, and first thin-film encapsulation layers are formed on the upper layers of the anodes in different types of pixel regions, respectively, including:

[0121] A first organic light emitting material layer, a first cathode material layer and a first thin film encapsulation material layer are sequentially formed on the upper layer of the anode.

[0122] The first organic light-emitting material layer, the first cathode material layer and the first thin-film encapsulation material layer are etched to form a first organic light-emitting layer, a cathode and a first thin-film encapsulation layer on the anode in the first pixel region.

[0123] A second organic light emitting material layer, a second cathode material layer, and a second thin film encapsulation material layer are sequentially formed on the upper layer of the anode.

[0124] The second organic light-emitting material layer, the second cathode material layer and the second thin-film encapsulation material layer are etched to form a second organic light-emitting layer, a cathode and a first thin-film encapsulation layer on the anode in the second pixel region.

[0125] A third organic light emitting material layer, a third cathode material layer and a third thin film encapsulation material layer are sequentially formed on the upper layer of the anode.

[0126] The third organic light emitting material layer, the third cathode material layer and the third thin film encapsulation material layer are etched to form a third type of organic light emitting layer, a cathode and a first thin film encapsulation layer on the anode in the third type of pixel area.

[0127] Specifically, Fig. 9 As shown, a first organic light-emitting material layer 161 and a first cathode material layer 171 can be prepared in sequence on the upper layer of the anode 11 by evaporation, and then a first thin film encapsulation material layer 181 can be formed on the first cathode material layer 171 by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0128] The first cathode material layer 171 and the second cathode material layer 171 are disconnected in the shielding area below the eaves structure at the edge of the first partition layer 14 and the second partition layer 15 .

[0129] like Fig.10 As shown, the first organic light-emitting material layer 161, the first cathode material layer 171 and the first thin film encapsulation material layer 181 can be etched by an etching process (for example, a photolithography process including exposure and development steps), and the first organic light-emitting material layer 161, the first cathode material layer 171 and the first thin film encapsulation material layer 181 located in the second type pixel area 101B and the third type pixel area 101C can be removed, thereby forming the first type organic light-emitting layer 16A, the cathode 17 and the first thin film encapsulation layer 18 in the first type pixel area 101A.

[0130] Among them, when removing the first organic light-emitting material layer 161 of the second type pixel area 101B and the third type pixel area 101C, the first thin film encapsulation material layer 181 located in the first type pixel area 101A can protect the first type organic light-emitting layer 16A that needs to be retained, thereby preventing external water and oxygen from corroding the first type organic light-emitting layer 16A.

[0131] Similarly, if Fig.21 As shown, the second organic light-emitting material layer 162 and the second cathode material layer 172 can be prepared in sequence by evaporation, and then the second thin film encapsulation material layer 182 can be formed on the second cathode material layer 172 by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0132] The second organic light-emitting material layer 162 and the second cathode material layer 172 are disconnected in the shielding area below the eaves structure at the edge of the first partition layer 14 and the second partition layer 15 .

[0133] like Fig. 22 As shown, the second organic light-emitting material layer 162, the second cathode material layer 172 and the second thin film encapsulation material layer 182 can be etched by an etching process (for example, a photolithography process including exposure and development steps), and the second organic light-emitting material layer 162, the second cathode material layer 172 and the second thin film encapsulation material layer 182 located in the first type pixel area 101A and the third type pixel area 101C can be removed, thereby forming a second type organic light-emitting layer 16B, a cathode 17 and a first thin film encapsulation layer 18 in the second type pixel area 101B.

[0134] Among them, when removing the second organic light-emitting material layer 162 in the first type pixel area 101A and the third type pixel area 101C, the second thin film encapsulation material layer 182 located in the second type pixel area 101B can protect the second type organic light-emitting layer 16B that needs to be retained, thereby preventing external water and oxygen from corroding the second type organic light-emitting layer 16B.

[0135] The same method can be used later, such as Fig.23 As shown, the third organic light-emitting material layer 163 and the third cathode material layer 173 can be prepared in layers in sequence by evaporation, and then a third thin film encapsulation material layer 183 can be formed on the third cathode material layer 173 by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0136] The third organic light-emitting material layer 163 and the third cathode material layer 173 are disconnected in the shielding area below the eaves structure at the edge of the first partition layer 14 and the second partition layer 15 .

[0137] like Fig.24 As shown, the third organic light-emitting material layer 163, the third cathode material layer 173 and the third thin film encapsulation material layer 183 can be etched by an etching process (for example, a photolithography process including exposure and development steps), and the third organic light-emitting material layer 163, the third cathode material layer 173 and the third thin film encapsulation material layer 183 located in the first type pixel area 101A and the second type pixel area 101B are removed, thereby forming a third type organic light-emitting layer 16C, a cathode 17 and a first thin film encapsulation layer 18 in the third type pixel area 101C.

[0138] Among them, when removing the third organic light-emitting material layer 163 in the first type pixel area 101A and the second type pixel area 101B, the third thin film encapsulation material layer 183 located in the third type pixel area 101C can protect the third type organic light-emitting layer 16C that needs to be retained, thereby preventing external water and oxygen from corroding the third type organic light-emitting layer 16C.

[0139] It should be noted that in the above preparation process, atomic layer deposition (ALD) technology can form a uniform, dense and void-free film, which can achieve uniform coverage even on complex geometric structures and can precisely control the thickness of the film, meeting the requirements of high step coverage and excellent isolation performance.

[0140] Chemical Vapor Deposition (CVD) technology can achieve uniform deposition of high-quality thin films on large-area substrates, so that the thin-film encapsulation layer can provide good water vapor and oxygen barrier properties.

[0141] The manufacturing method of the organic light-emitting display device provided in the embodiment of the present invention forms organic light-emitting layers 16 of different colors in different types of pixel areas 101 through an etching process, without using a fine metal mask (Fine Metal Mask, FMM), thereby avoiding the problem that the film forming position of the organic light-emitting material layer deviates greatly from the preset position due to the manufacturing deviation, alignment deviation and thermal deformation of the fine metal mask itself, and can meet the user's high-resolution requirements for the organic light-emitting display device. At the same time, without using a fine metal mask, the manufacturing cost of the organic light-emitting display device can also be reduced.

[0142] Optionally, removing the second barrier layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second barrier layer includes:

[0143] The second partition layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second partition layer are removed by a reactive ion etching process or a plasma etching process.

[0144] Reaction ion etching (RIE) uses an ion beam of reactive gas to cut the chemical bonds of the film material, thereby generating low-molecular substances that evaporate or dissociate, thereby achieving the effect of removing the film material.

[0145] Capacitively Coupled Plasma (CCP) etching generates plasma through capacitive coupling to chemically react with the material to achieve the effect of removing the film material.

[0146] Both RIE and CCP are anisotropic etching processes. Since the ions have high kinetic energy, they mainly bombard the material in a direction perpendicular to the substrate surface. Therefore, the RIE and CCP processes have strong anisotropy, causing etching to occur mainly in the vertical direction, while the sidewall etching rate is relatively slow, thereby maintaining good sidewall verticality during the etching process, which is suitable for the removal of fine structures.

[0147] In this embodiment, if Fig.14 and Fig.15 As shown, the area except the area where the second partition layer 15 is located can be protected with a photoresist (not shown in the figure) through an exposure and development process, and then the second partition layer 15 and the organic light-emitting layer 16, cathode 17 and first thin-film encapsulation layer 18 thereon can be accurately removed by using a reactive ion etching process or a plasma etching process with anisotropic characteristics, wherein the reactive ion etching process or the plasma etching process can ensure that the etching mainly occurs in the vertical direction, so that the retained first thin-film encapsulation layer 18 can maintain good side wall verticality.

[0148] Furthermore, during the etching of the second barrier layer 15 and the organic light-emitting layer 16 , cathode 17 and first thin-film encapsulation layer 18 thereon, an endpoint detection technique can be used to precisely control the etching depth, avoid over-etching and protect the structure below the first barrier layer 14 .

[0149] Among them, different materials will emit different spectral characteristics during the etching process. As the etching process proceeds, changes in the etching materials will cause significant changes in the spectral signal.

[0150] Therefore, a spectrometer or an optical sensor can be installed in the etching chamber to monitor the spectral changes of the reflected light or emitted light in real time during the etching process. When the etching reaches the first barrier layer 14, the spectral signal will mutate, triggering the etching stop signal. At this time, the etching process is stopped to ensure that the etching can accurately stop on the surface of the first barrier layer 14, thereby avoiding over-etching and protecting the structure below the first barrier layer 14 (such as the cathode 17 and the auxiliary cathode layer 13).

[0151] In other embodiments, the etching ratio of the first isolation layer 14 and the second isolation layer 15 can also be utilized by selecting a suitable etching gas or liquid for a sufficient etching time to achieve highly selective etching, thereby removing the second isolation layer 15 while retaining the first isolation layer 14 and protecting the structure underneath (such as the cathode 17 and the auxiliary cathode layer 13) through the first isolation layer 14.

[0152] It can be understood that by setting the first isolation layer 14, when removing the second isolation layer 15, the first isolation layer 14 can be used as an etching stop layer in the etching process to ensure that the etching stops on the first isolation layer 14, thereby avoiding etching to the cathode 17 under the first isolation layer 14, protecting the cathode 17 under the first isolation layer 14 from damage, and preventing the cathode 17 from breaking.

[0153] Continue to refer Figure 6-Figure 16 Optionally, the thickness of the first barrier layer 14 is less than or equal to the thickness of the second barrier layer 15 .

[0154] Specifically, Figure 6-Figure 16 As shown, the first partition layer 14 acts as an etching stop layer during the etching process and will eventually remain in the organic light-emitting display device. If the thickness of the first partition layer 14 is too large, it will block a large range of large-angle light emitted by the organic light-emitting layer 16 in the pixel area 101. This part of the light is irradiated on the side wall of the first partition layer 14. On the one hand, it will continuously form reflections on the side wall of the first partition layer 14 to cause scattering, thereby forming a light scattering area around the pixel area 101, resulting in problems such as blurred display images and reduced contrast, affecting the display quality; on the other hand, part of the light irradiated on the side wall of the first partition layer 14 will also be absorbed by the first partition layer 14 and cannot be emitted, thereby causing a decrease in light extraction efficiency, affecting the display brightness of the organic light-emitting display device.

[0155] In this embodiment, the thickness of the first partition layer 14 is set to be less than or equal to the thickness of the second partition layer 15 so that the first partition layer 14 has a thinner thickness, thereby reducing the side wall area of ​​the first partition layer 14, so that the amount of light irradiated on the side wall of the first partition layer 14 is reduced. On the one hand, it can reduce the reflection of light on the side wall of the first partition layer 14, weaken the scattering phenomenon, and improve the display quality; on the other hand, it can also reduce the absorption of light by the first partition layer 14 and improve the light extraction efficiency.

[0156] Optionally, the thickness of the first barrier layer 14 is 20 nm to 100 nm.

[0157] If the thickness of the first isolation layer 14 is too thin, the first isolation layer 14 may be etched through during the etching process of the second isolation layer 15 and the organic light-emitting layer 16, cathode 17 and first thin-film encapsulation layer 18 thereon, causing the cathode 17 below the first isolation layer 14 to be etched and damaged.

[0158] In this embodiment, by setting the thickness of the first isolation layer 14 to be greater than or equal to 20 nm, it can be ensured that the etching stops on the first isolation layer 14, so that the first isolation layer 14 will not be completely removed during the etching process, thereby avoiding etching to the cathode 17 under the first isolation layer 14, and protecting the cathode 17 under the first isolation layer 14 from damage.

[0159] Meanwhile, as mentioned above, if the thickness of the first partition layer 14 is too large, light scattering and absorption on the sidewalls of the first partition layer 14 will increase, thus affecting display quality.

[0160] In this embodiment, by setting the thickness of the first partition layer 14 to be less than or equal to 100 nm, light scattering and absorption on the sidewall of the first partition layer 14 can be reduced, thereby improving display quality.

[0161] Among them, the specific thickness of the first isolation layer 14 can be set according to actual needs. For example, the thickness of the first isolation layer 14 is further set to 20nm~50nm, so as to protect the cathode 17 from damage while reducing the light scattering and absorption on the side wall of the first isolation layer 14 to ensure display quality. The embodiment of the present invention does not make specific limitations on this.

[0162] Optionally, the thickness of the second barrier layer 15 is 300 nm to 500 nm.

[0163] Among them, by setting the thickness of the second isolation layer 15 to be greater than or equal to 300nm, the strength of the structure of the second isolation layer 15 can be ensured, thereby reducing the risk of edge damage or shape change of the second isolation layer 15, helping to maintain the stability of the size and position of the shielding area formed by the second isolation layer 15, ensuring that the organic light-emitting layer 16 can be accurately deposited at a preset position, thereby improving the accuracy and reliability of the manufacturing process.

[0164] At the same time, by setting the thickness of the second partition layer 15 to be less than or equal to 500 nm, when the organic light-emitting layer 16 is formed by vapor deposition, it is helpful to reduce the shielding of the vapor-deposited material by the second partition layer 15, so that more vapor-deposited material can pass through the opening formed by the second partition layer 15, thereby increasing the area of ​​the organic light-emitting layer 16 vapor-deposited onto the substrate 10 by the vapor-deposited material, making the coverage area of ​​the organic light-emitting layer 16 closer to the designed regional pattern, thereby improving the vapor deposition accuracy of the organic light-emitting layer 16.

[0165] Optionally, the material of the first barrier layer 14 is different from the material of the second barrier layer 15 .

[0166] As mentioned above, different materials will emit different spectral characteristics during the etching process. As the etching process progresses, changes in the etched material will cause significant changes in the spectral signal. Therefore, by installing a spectrometer or optical sensor in the etching chamber, the spectral changes of the reflected light or emitted light during the etching process can be monitored in real time.

[0167] In this embodiment, if Fig.14 and Fig.15 As shown, by setting the material of the first isolation layer 14 to be different from the material of the second isolation layer 15, in the process of removing the second isolation layer 15, when the etching reaches the first isolation layer 14, the spectral signal can be caused to mutate, triggering the etching stop signal, so that the etching process is stopped when the etching reaches the first isolation layer 14, ensuring that the etching stops accurately on the surface of the first isolation layer 14, thereby avoiding over-etching and protecting the structure below the first isolation layer 14 (such as the cathode 17 and the auxiliary cathode layer 13) from damage.

[0168] At the same time, the first barrier layer 14 and the second barrier layer 15 are made of different materials, so that the first barrier layer 14 and the second barrier layer 15 can have a larger etching ratio, wherein the etching ratio refers to the ratio of the etching speeds of different materials under the same etching conditions.

[0169] In this way, in the process of removing the second isolation layer 15, the etching ratio of the first isolation layer 14 and the second isolation layer 15 can also be utilized. By selecting a suitable etching gas or liquid for a sufficient etching time, the etching speed of the second isolation layer 15 is much greater than the etching speed of the first isolation layer 14, thereby performing highly selective etching. While removing the second isolation layer 15, the first isolation layer 14 is retained, and the structure underneath it (such as the cathode 17 and the auxiliary cathode layer 13) is protected by the first isolation layer 14.

[0170] Optionally, the material of the first barrier layer 14 includes at least one of aluminum oxide (Al2O3), titanium oxide (TiO2), silicon nitride (SiN), titanium nitride (TiN) and hafnium oxide (HfO2).

[0171] In which, when removing the second isolation layer 15, in order to ensure that the etching can accurately stop on the first isolation layer 14, the spectral characteristics formed by the first isolation layer 14 and the second isolation layer 15 during the etching process should have a significant change, or the material of the first isolation layer 14 should have a lower etching rate, while the material of the second isolation layer 15 should have a higher etching rate.

[0172] In this embodiment, by setting the first isolation layer 14 to use at least one of aluminum oxide (Al2O3), titanium oxide (TiO2), silicon nitride (SiN), titanium nitride (TiN) and hafnium oxide (HfO2), the first isolation layer 14 and the second isolation layer 15 can achieve significant spectral characteristic changes during the etching process. Therefore, in the process of removing the second isolation layer 15, the spectral changes of the reflected light or the emitted light during the etching process can be monitored to trigger an etching stop signal, and the etching process can be stopped when the first isolation layer 14 is etched, ensuring that the etching stops accurately on the surface of the first isolation layer 14, thereby avoiding over-etching and protecting the structure below the first isolation layer 14 (such as the cathode 17 and the auxiliary cathode layer 13) from damage.

[0173] At the same time, aluminum oxide (Al2O3), titanium oxide (TiO2), silicon nitride (SiN), titanium nitride (TiN) and hafnium oxide (HfO2) have a lower etching rate for common etching gases (such as oxygen, chlorine or hydrogen fluoride, etc.). Therefore, the first isolation layer 14 adopts the above materials, which can make the first isolation layer 14 and the second isolation layer 15 have a larger etching ratio. Therefore, in the process of removing the second isolation layer 15, by selecting a suitable etching gas or liquid for etching for a sufficient time, the etching speed of the second isolation layer 15 is much greater than the etching speed of the first isolation layer 14, thereby achieving highly selective etching. In this way, while removing the second isolation layer 15, the first isolation layer 14 is retained, and the structure underneath it (such as the cathode 17 and the auxiliary cathode layer 13) can be protected by the first isolation layer 14.

[0174] In addition, aluminum oxide (Al2O3), titanium oxide (TiO2), silicon nitride (SiN), titanium nitride (TiN) and hafnium oxide (HfO2) also have good insulation properties, chemical stability and low light absorption characteristics. Therefore, the first isolation layer 14 uses the above materials, which can also ensure that the first isolation layer 14 maintains good performance in high temperature and humid heat environment, and helps to reduce light absorption and improve light output efficiency.

[0175] Furthermore, the specific material of the second isolation layer 15 can be set according to actual needs. For example, the material of the second isolation layer 15 can use silicon dioxide (SiO2) so that the second isolation layer 15 has a higher etching rate for common etching gases (such as oxygen, chlorine, etc.), thereby achieving highly selective etching and facilitating the removal of the second isolation layer 15.

[0176] Continue to refer Fig.16 Optionally, the material of the first thin film encapsulation layer 18 is the same as the material of the second thin film encapsulation layer 19 .

[0177] Specifically, Fig.16 As shown, the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19 are made of the same material, so that the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19 can have the same refractive index, so that the light will hardly be reflected or refracted at the interface between the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19, which is beneficial to reduce light scattering and absorption at the interface between the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19, thereby improving light extraction efficiency and display quality.

[0178] Meanwhile, the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19 are made of the same material and can be formed by the same process, which helps to reduce process complexity and cost.

[0179] In addition, the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19 are made of the same material, so that the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19 have similar physical properties (such as hardness, elastic modulus, thermal expansion coefficient, etc.), which can reduce film warping or delamination problems caused by stress mismatch, and help improve the mechanical strength and durability of the packaging structure.

[0180] Optionally, the material of the first thin film encapsulation layer 18 and the material of the second thin film encapsulation layer 19 include silicon nitride (SiN), wherein silicon nitride has good chemical stability and high transparency. The material of the first thin film encapsulation layer 18 and the second thin film encapsulation layer 19 uses silicon nitride, which can effectively prevent the penetration of water vapor and oxygen, provide good barrier properties, and can effectively transmit light and reduce light absorption, but is not limited to this.

[0181] Optionally, the ratio of the refractive index of the first barrier layer 14 to the refractive index of the first thin-film encapsulation layer 18 is 0.7-1.

[0182] Among them, by setting the ratio between the refractive index of the first isolation layer 14 and the refractive index of the first thin film encapsulation layer 18 in the range of 0.7 to 1, that is, the difference between the refractive index of the first isolation layer 14 and the refractive index of the first thin film encapsulation layer 18 is within 30% of the refractive index of the first thin film encapsulation layer 18, the refractive index of the first isolation layer 14 and the first thin film encapsulation layer 18 can be made closer, so that the light will not be significantly reflected or refracted between the first isolation layer 14 and the first thin film encapsulation layer 18, which is beneficial to reduce the light scattering and absorption between the first isolation layer 14 and the first thin film encapsulation layer 18, and improve the light extraction efficiency and display quality.

[0183] It should be noted that when the material of the first thin film encapsulation layer 18 and the material of the second thin film encapsulation layer 19 are the same, the ratio between the refractive index of the first isolation layer 14 and the refractive index of the second thin film encapsulation layer 19 can also be 0.7-1, that is, the difference between the refractive index of the first isolation layer 14 and the refractive index of the second thin film encapsulation layer 19 is within 30% of the refractive index of the second thin film encapsulation layer 19, so that the refractive index of the first isolation layer 14 and the second thin film encapsulation layer 19 are closer, and the light will not be significantly reflected or refracted at the interface between the first isolation layer 14 and the second thin film encapsulation layer 19, which is beneficial to reduce light scattering and absorption at the interface between the first isolation layer 14 and the second thin film encapsulation layer 19, thereby improving light extraction efficiency and display quality.

[0184] Optionally, the material of the first barrier layer 14 is the same as the material of the first thin-film encapsulation layer 18 .

[0185] Among them, the first isolation layer 14 and the first thin film encapsulation layer 18 are made of the same material, so that the first isolation layer 14 and the first thin film encapsulation layer 18 have the same refractive index, so that the light will hardly be reflected or refracted between the first isolation layer 14 and the first thin film encapsulation layer 18, which is beneficial to reduce the light scattering and absorption between the first isolation layer 14 and the first thin film encapsulation layer 18, and improve the light extraction efficiency and display quality.

[0186] It should be noted that when the material of the first thin film encapsulation layer 18 and the material of the second thin film encapsulation layer 19 are the same, the materials of the first isolation layer 14 and the second thin film encapsulation layer 19 may also be the same, so that the first isolation layer 14 and the second thin film encapsulation layer 19 have the same refractive index. In this case, light will hardly be reflected or refracted at the interface between the first isolation layer 14 and the second thin film encapsulation layer 19, which is beneficial to reduce light scattering and absorption at the interface between the first isolation layer 14 and the second thin film encapsulation layer 19, thereby improving light extraction efficiency and display quality.

[0187] Continue to refer Figure 7-Figure 14 Optionally, a vertical projection of the first barrier layer 14 on the substrate 10 covers a vertical projection of the second barrier layer 15 on the substrate 10 .

[0188] Among them, by setting the vertical projection of the first isolation layer 14 on the substrate 10 to cover the vertical projection of the second isolation layer 15 on the substrate 10, the setting range of the first isolation layer 14 can completely cover the second isolation layer 15, so that when the second isolation layer 15 is removed, it can be ensured that the first isolation layer 14 plays a role of etching barrier in a larger range, avoiding the etching gas from continuing to diffuse downward through the edge of the first isolation layer 14, thereby helping to protect the structure below the first isolation layer 14 (such as the cathode 17 and the auxiliary cathode layer 13).

[0189] Continue to refer Figure 6 and Figure 7 Optionally, the patterning of the first isolation layer 14 and the second isolation layer 15 can be completed simultaneously in the same etching process. At this time, the vertical projection of the first isolation layer 14 on the substrate 10 can coincide with the vertical projection of the second isolation layer 15 on the substrate 10. While achieving that the vertical projection of the first isolation layer 14 on the substrate 10 covers the vertical projection of the second isolation layer 15 on the substrate 10, it helps to shorten the process cycle and reduce manufacturing costs.

[0190] In other embodiments, the vertical projection area of ​​the first isolation layer 14 on the substrate 10 may also be larger than the vertical projection area of ​​the second isolation layer 15 on the substrate 10, so as to compensate for alignment errors and process fluctuations in the manufacturing process, and ensure that under process errors, the first isolation layer 14 can still completely cover the second isolation layer 15, thereby preventing the etching gas from continuing to diffuse downward through the edge of the first isolation layer 14, thereby protecting the structure below the first isolation layer 14 (such as the cathode 17 and the auxiliary cathode layer 13).

[0191] Continue to refer Fig.16 Optionally, a ratio between a width of the first partition layer 14 and a width of the auxiliary cathode layer 13 is greater than or equal to 1.6.

[0192] Among them, by setting the ratio of the width of the first isolation layer 14 to the width of the auxiliary cathode layer 13 to be greater than or equal to 1.6, that is, the difference between the width of the first isolation layer 14 and the width of the auxiliary cathode layer 13 is 60% or more of the width of the auxiliary cathode layer 13, it is beneficial to increase the area of ​​the cathode 17 covered by the first isolation layer 14. In this way, when the second isolation layer 15 is removed, the first isolation layer 14 can play a role of etching barrier in a larger range, and can effectively block the etching gas from continuing to diffuse downward through the edge of the first isolation layer 14, thereby helping to protect the cathode 17 under the first isolation layer 14.

[0193] It should be noted that, in order to prevent the first partition layer 14 from blocking the normal light emission of the pixel region 101 , it is necessary to ensure that the first partition layer 14 only covers the area between adjacent pixel regions 101 and does not cover the pixel region 101 .

[0194] Optionally, the ratio of the width of the second partition layer 15 to the width of the auxiliary cathode layer 13 is greater than or equal to 1.6, that is, the difference between the width of the second partition layer 15 and the width of the auxiliary cathode layer 13 is 60% or more of the width of the auxiliary cathode layer 13. In this way, the second partition layer 15 can be prevented from exceeding the width of the auxiliary cathode layer 13 by too small, thereby preventing the edge of the auxiliary cathode layer 13 from being too shallowly recessed relative to the edge of the second partition layer 15 away from the pixel area 101, thereby preventing the organic light-emitting layer 16 from being disconnected at the recess.

[0195] Optionally, the thickness of the auxiliary cathode layer 13 is greater than or equal to the sum of the thicknesses of the organic light-emitting layer 16 and the cathode 17, so that there is a sufficient height difference between the bottom surface of the first isolation layer 14 and the top surface of the first insulating layer 12, thereby ensuring that the organic light-emitting layer 16 deposited on the upper surface of the second isolation layer 15 and the organic light-emitting layer 16 deposited on the upper surfaces of the first insulating layer 12 and the anode 11 cannot be connected and are disconnected, thereby achieving the precise formation of an organic light-emitting layer 16 of a corresponding color in each pixel area 101.

[0196] Optionally, the material of the first barrier layer 14 is different from the material of the auxiliary cathode layer 13 .

[0197] Specifically, Figure 7 and Figure 8 As shown, after forming the auxiliary cathode layer 13, the first barrier layer 14 and the second barrier layer 15, the side wall of the auxiliary cathode layer 13 is etched so that the edges of the first barrier layer 14 and the second barrier layer 15 both exceed the edge of the auxiliary cathode layer 13. Wherein, the material of the first barrier layer 14 is different from that of the auxiliary cathode layer 13. In the above-mentioned process of etching the side wall of the auxiliary cathode layer 13, an etchant with high selectivity to the material of the auxiliary cathode layer 13 can be selected so that the etching speed of the auxiliary cathode layer 13 is much greater than the etching speed of the first barrier layer 14, so that the side wall of the auxiliary cathode layer 13 is etched preferentially, so that the side wall of the auxiliary cathode layer 13 forms a recessed notch that is recessed inward, so that the edge of the first barrier layer 14 exceeds the edge of the auxiliary cathode layer 13. At the same time, when etching the side wall of the auxiliary cathode layer 13, the damage to the first barrier layer 14 can also be reduced.

[0198] Optionally, forming a second thin film encapsulation layer on the first thin film encapsulation layer includes:

[0199] A second thin film encapsulation material layer is formed on the first thin film encapsulation layer.

[0200] The second thin film encapsulation material layer is etched to form a second thin film encapsulation layer.

[0201] Among them, the height difference between the upper surface of the second thin film encapsulation layer in the pixel area and the upper surface of the second thin film encapsulation layer between the pixel areas is less than or equal to 0.1μm, or the height difference between the upper surface of the second thin film encapsulation layer and the upper surface of the first thin film encapsulation layer is less than or equal to 0.1μm.

[0202] Specifically, Fig. 22 A schematic diagram of the structure of another process of manufacturing an organic light emitting display device provided by an embodiment of the present invention, Fig.23 A schematic diagram of the process structure of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig. 22 and Fig.23 As shown, when the second thin film encapsulation layer 19 is formed on the first thin film encapsulation layer 18, a whole second thin film encapsulation material layer 190 (such as Fig. 22 (a) and Fig.23 (as shown in (a)).

[0203] Among them, since the film layer above the first isolation layer 14 is removed, there is a large height difference between the upper surface of the first isolation layer 14 and the upper surface of the first thin film encapsulation layer 18. When the second thin film encapsulation material layer 190 is deposited on the first isolation layer 14 and the first thin film encapsulation layer 18, the upper surface of the second thin film encapsulation material layer 190 in the pixel area 101 is often higher than the upper surface of the second thin film encapsulation material layer 190 above the first isolation layer 14, thereby forming an obvious pit on the upper surface of the second thin film encapsulation material layer 190. If the second thin film encapsulation material layer 190 is not further processed, part of the light will be reflected or refracted at the side wall of the pit, thereby forming a scattering phenomenon at the side wall of the pit, resulting in problems such as blurred display image and reduced contrast, affecting the display quality.

[0204] In this embodiment, if Fig. 22 As shown in (b), the second thin film encapsulation material layer 190 is etched to form a second thin film encapsulation layer 19, wherein the height difference between the upper surface of the second thin film encapsulation layer 19 in the pixel area 101 and the upper surface of the second thin film encapsulation layer 19 between the pixel areas 101 is less than or equal to 0.1 μm, so that the side wall area of ​​the pit formed on the upper surface of the second thin film encapsulation layer 19 can be reduced, thereby reducing the light scattering phenomenon at the side wall of the pit and improving the display quality.

[0205] Furthermore, if Fig. 22 As shown in (b), the upper surface of the second thin film encapsulation layer 19 in the pixel area 101 is flush with the upper surface of the second thin film encapsulation layer 19 between the pixel areas 101, that is, the upper surface of the second thin film encapsulation layer 19 in the pixel area 101 and the upper surface of the second thin film encapsulation layer 19 between the pixel areas 101 are located on the same horizontal plane. At this time, the upper surface of the second thin film encapsulation layer 19 in the pixel area 101 and the upper surface of the second thin film encapsulation layer 19 between the pixel areas 101 are at the same height, which can eliminate the pits on the upper surface of the second thin film encapsulation layer 19, thereby eliminating the light scattering phenomenon at the side walls of the pits and improving the display quality.

[0206] In another embodiment, if Fig.23 As shown in (b), the height difference between the upper surface of the second thin film encapsulation layer 19 and the upper surface of the first thin film encapsulation layer 18 is less than or equal to 0.1 μm, which can reduce the side wall area of ​​the pit formed between the upper surface of the second thin film encapsulation layer 19 and the upper surface of the first thin film encapsulation layer 18, thereby reducing the light scattering phenomenon at the side wall of the pit and improving the display quality.

[0207] Furthermore, if Fig.23 As shown in (b), the upper surface of the second thin film encapsulation layer 19 is flush with the upper surface of the first thin film encapsulation layer 18, that is, the upper surface of the second thin film encapsulation layer 19 and the upper surface of the first thin film encapsulation layer 18 are located on the same horizontal plane. At this time, the upper surface of the second thin film encapsulation layer 19 is at the same height as the upper surface of the first thin film encapsulation layer 18, so that the pit formed between the upper surface of the second thin film encapsulation layer 19 and the upper surface of the first thin film encapsulation layer 18 can be eliminated, thereby eliminating the light scattering phenomenon at the side wall of the pit, thereby improving the display quality.

[0208] Optionally, etching the second thin film encapsulation material layer to form a second thin film encapsulation layer includes:

[0209] A planarization layer is formed on the second thin film encapsulation material layer.

[0210] The planarization layer and the second thin film encapsulation material layer are etched to form a second thin film encapsulation layer.

[0211] Specifically, Fig.24 A schematic diagram of the process structure of another method for manufacturing an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.24 As shown, in the process of etching the second thin film encapsulation material layer 190 to form the second thin film encapsulation layer 19, a planarization layer 200 (such as Fig.24 (as shown in (a)).

[0212] like Fig.24As shown in (b), the planarization layer 200 and the second thin film encapsulation material layer 190 are etched to form a second thin film encapsulation layer 19.

[0213] The planarization layer 200 can fill the pit area on the upper surface of the second thin film encapsulation material layer 190, thereby providing a relatively flat upper surface. When the planarization layer 200 and the second thin film encapsulation material layer 190 are subsequently etched, the planarization layer 200 will be etched downward from the relatively flat upper surface at a relatively uniform speed, ensuring that the entire upper surface is cut at a relatively consistent speed, so that the formed second thin film encapsulation layer 19 has a relatively flat upper surface (such as Fig.24 (b) to achieve a flattening effect, which is beneficial to ensure uniform light output, eliminate light scattering, and improve display quality.

[0214] Optionally, the material of the planarization layer 200 includes a resin material, which has good fluidity, thereby effectively filling the pits and uneven areas on the surface of the second thin film encapsulation material layer 190, and providing a relatively flat upper surface. At the same time, the use of resin materials can also reduce defects such as bubbles and particles during the coating process, and improve the quality of the film.

[0215] It should be noted that the material of the planarization layer 200 is not limited to the above materials, and the embodiment of the present invention does not make any specific limitation on this.

[0216] Optionally, etching the second thin film encapsulation material layer to form a second thin film encapsulation layer includes:

[0217] The second thin film encapsulation material layer is etched by a chemical mechanical polishing process to form a second thin film encapsulation layer.

[0218] Among them, chemical mechanical polishing (CMP) is a surface flattening technology widely used in semiconductor manufacturing and microelectronic device processing. CMP can effectively remove the uneven parts of the film surface through the combination of chemical reaction and mechanical grinding, making the surface flat at the nanometer level.

[0219] In this embodiment, if Fig. 22 and Fig.23 As shown, in the process of etching the second thin film encapsulation material layer 190 to form the second thin film encapsulation layer 19, the second thin film encapsulation material layer 190 can be directly etched by a chemical mechanical polishing (CMP) process to grind the upper surface of the second thin film encapsulation material layer 190 to form the second thin film encapsulation layer 19.

[0220] Optional, such as Fig. 22As shown, in the process of etching the second thin film encapsulation material layer 190 through the chemical mechanical polishing (CMP) process, the first thin film encapsulation layer 18 may not be exposed, and only the upper surface of the second thin film encapsulation material layer 190 is polished to form the second thin film encapsulation layer 19. In this way, the first isolation layer 14 between the pixel area 101 and the pixel area 101 can be completely covered by the second thin film encapsulation layer 19, which is beneficial to prevent water vapor and oxygen from penetrating into the organic light-emitting display device, thereby avoiding the display problems caused thereby and enhancing the water and oxygen protection capability of the organic light-emitting display device.

[0221] Optional, such as Fig.23 As shown, in the process of etching the second thin film encapsulation material layer 190 through the chemical mechanical polishing (CMP) process, the second thin film encapsulation material layer 190 can be etched until the first thin film encapsulation layer 18 is exposed to form a second thin film encapsulation layer 19. This is beneficial to reducing the thickness of the second thin film encapsulation layer 19 in the pixel area 101, thereby reducing the overall thickness of the organic light-emitting display device, which is beneficial to achieving a lightweight and thin design of the organic light-emitting display device.

[0222] Optionally, after forming the second thin film encapsulation layer on the first thin film encapsulation layer, the method further includes:

[0223] A glue layer is formed on the second thin film encapsulation layer.

[0224] A cover plate is arranged on the upper layer of the glue layer.

[0225] Specifically, Fig.25 A partial cross-sectional structural diagram of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.25 As shown, a glue layer 40 is coated on the second thin film encapsulation layer 19 . The glue layer 40 may be made of transparent optical glue (eg UV curing glue, epoxy resin, etc.) to provide higher transparency and good adhesion, but is not limited thereto.

[0226] Furthermore, the cover plate 41 is attached to the adhesive layer 40 , and the cover plate 41 is used to protect the entire organic light emitting display device, thereby improving the scratch resistance and impact resistance of the organic light emitting display device.

[0227] The cover plate 41 may be a glass cover plate to provide higher transparency and good mechanical strength, but is not limited thereto.

[0228] Fig.26 A schematic diagram of a film structure of a pixel provided by an embodiment of the present invention is shown in FIG. Fig.26As shown, optionally, the organic light-emitting layer 16 is located between the anode 11 and the cathode 17, and the organic light-emitting layer 16 includes a first carrier adjustment layer 51, a light-emitting material layer 52, and a second carrier adjustment layer 53 which are sequentially stacked. The first carrier adjustment layer 51 is located between the anode 11 and the light-emitting material layer 52, and the second carrier adjustment layer 53 is located between the cathode 17 and the light-emitting material layer 52. The first carrier adjustment layer 51 may include a hole injection layer HIL and a hole transport layer HTL, and the second carrier adjustment layer 53 may include an electron transport layer ETL and an electron injection layer EIL.

[0229] Among them, the hole injection layer HIL is located on the anode 11, which is used to reduce the energy barrier of injecting holes from the anode 11 to the organic light-emitting layer 16, so that the holes can be more effectively transferred from the anode 11 to the hole transport layer HTL, thereby improving the hole injection efficiency and thus improving the luminous efficiency and brightness of the pixel.

[0230] The hole transport layer HTL is located on the hole injection layer HIL, and is used to effectively transport holes injected from the anode 11 to the light-emitting material layer 52, ensuring that the holes and the electrons in the light-emitting material layer 52 are effectively combined to generate photons.

[0231] The electron transport layer ETL is located on the light emitting material layer 52 and is used to effectively transport electrons from the cathode 19 to the light emitting material layer 52 to ensure that the electrons can be quickly and effectively transported to the light emitting material layer 52 and recombine with holes to emit photons.

[0232] The electron injection layer EIL is located on the electron transport layer ETL, and is used to reduce the energy barrier of electrons injected from the cathode 17 to the light-emitting material layer 52, thereby improving the electron injection efficiency. At the same time, the electron injection layer EIL can take into account good interface contact and energy level matching with the cathode 17 and the electron transport layer ETL, ensuring that electrons can be easily injected into the light-emitting material layer 52 to participate in the light-emitting process.

[0233] It should be noted that Fig.26 The film layer structure of one pixel is only exemplarily illustrated. In other embodiments, the first carrier adjustment layer 51 and the second carrier adjustment layer 53 are not limited to the above structure, and the embodiment of the present invention does not make any specific limitation on this.

[0234] Based on the same inventive concept, an embodiment of the present invention further provides an organic light-emitting display device, which is manufactured by any of the manufacturing methods of the organic light-emitting display devices provided in the above embodiments. Therefore, the organic light-emitting display device provided by the embodiment of the present invention has the technical effect of the technical solution in any of the above embodiments, and the structures that are the same or corresponding to the above embodiments and the explanation of terms are no longer repeated here.

[0235] The embodiment of the present invention further provides an organic light emitting display device, such as Fig.25 As shown, it includes: a substrate 10, the substrate 10 includes a plurality of pixel regions 101 arranged at intervals; an anode 11 arranged in the pixel region 101; a first insulating layer 12 arranged between the pixel regions 101; an auxiliary cathode layer 13 arranged on the first insulating layer 12; a first insulating layer 14 arranged on the auxiliary cathode layer 13, the edge of the first insulating layer 14 exceeds the edge of the auxiliary cathode layer 13; an organic light-emitting layer 16 arranged on the anode 11, the organic light-emitting layers 16 of adjacent pixel regions 101 are separated from each other by the first insulating layer 14; a cathode 17 arranged on the organic light-emitting layer 16, the cathode 17 and the adjacent auxiliary cathode layer 13 are electrically connected; a first thin film encapsulation layer 18 arranged on the cathode 17, the first thin film encapsulation layer 18 covers the cathode 17 and exposes the first insulating layer 14; a second thin film encapsulation layer 19 arranged on the first thin film encapsulation layer 18, the second thin film encapsulation layer 19 covers the first thin film encapsulation layer 18 and the first insulating layer 14.

[0236] Optionally, the organic light emitting display device provided in the embodiment of the present invention is a silicon-based micro organic light emitting display device (Silicon-based Micro-OLED Display).

[0237] Among them, the silicon-based micro-organic light-emitting display device combines the silicon-based integrated circuit (CMOS) process and the organic light-emitting diode (OLED) technology to integrate the OLED pixel array directly onto the silicon wafer to form a micro-display.

[0238] Silicon-based micro-organic light-emitting display devices are small, light, low power consumption, high brightness, fast response speed and wide viewing angle. They are suitable for use in near-eye display devices such as virtual reality (VR), augmented reality (AR) headsets, head-up display (HUD) systems, micro-projectors and other portable electronic products with strict requirements on size, weight and energy consumption.

[0239] In an embodiment of the present invention, the substrate in the organic light-emitting display device can be a silicon-based driving backplane, and a corresponding organic light-emitting layer can be formed in each pixel area on the substrate through an etching process (for example, a photolithography process including exposure and development steps), and the size of the pixel area can reach 2μm to 3μm. Compared with the use of a traditional fine metal mask (Fine Metal Mask, FMM) to form an organic light-emitting layer, a smaller pixel size and higher resolution can be achieved, and the manufacturing cost is lower.

[0240] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0241] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for manufacturing an organic light emitting display device, characterized in that: The manufacturing method comprises: Providing a substrate, the substrate comprising a plurality of pixel regions arranged at intervals; forming an anode in the plurality of pixel regions; forming a first insulating layer between the pixel regions; forming an auxiliary cathode layer, a first partition layer and a second partition layer on the first insulating layer, wherein the first partition layer is located on the upper layer of the auxiliary cathode layer, the second partition layer is located on the upper layer of the first partition layer, and the edges of the first partition layer and the second partition layer both exceed the edge of the auxiliary cathode layer; Forming an organic light-emitting layer, a cathode and a first thin-film encapsulation layer on the upper layer of the anode, wherein the cathode is located on the upper layer of the organic light-emitting layer, and the first thin-film encapsulation layer is located on the upper layer of the cathode; removing the second partition layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second partition layer; A second thin film encapsulation layer is formed on the first thin film encapsulation layer, and the second thin film encapsulation layer covers the first isolation layer.

2. The manufacturing method according to claim 1, characterized in that: The thickness of the first barrier layer is less than or equal to the thickness of the second barrier layer.

3. The manufacturing method according to claim 1, characterized in that: The thickness of the first barrier layer is 20 nm to 100 nm.

4. The manufacturing method according to claim 1, characterized in that: The material of the first barrier layer is different from the material of the second barrier layer.

5. The manufacturing method according to claim 1, characterized in that: The material of the first barrier layer includes at least one of aluminum oxide, titanium oxide, silicon nitride, titanium nitride and hafnium oxide.

6. The manufacturing method according to claim 1, characterized in that: The ratio of the refractive index of the first barrier layer to the refractive index of the first thin film encapsulation layer is 0.7-1.

7. The manufacturing method according to claim 1, characterized in that: The material of the first isolation layer is the same as that of the first thin-film encapsulation layer.

8. The manufacturing method according to claim 1, characterized in that: The material of the first thin film encapsulation layer is the same as the material of the second thin film encapsulation layer.

9. The manufacturing method according to claim 1, characterized in that: A vertical projection of the first partition layer on the substrate covers a vertical projection of the second partition layer on the substrate.

10. The manufacturing method according to claim 1, characterized in that: A ratio between a width of the first partition layer and a width of the auxiliary cathode layer is greater than or equal to 1.

6.

11. The manufacturing method according to claim 1, characterized in that: The material of the first barrier layer is different from that of the auxiliary cathode layer.

12. The manufacturing method according to claim 1, characterized in that: Removing the second partition layer and the organic light-emitting layer, the cathode, and the first thin-film encapsulation layer above the second partition layer, comprising: The second partition layer and the organic light-emitting layer, the cathode and the first thin-film encapsulation layer above the second partition layer are removed by a reactive ion etching process or a plasma etching process.

13. The manufacturing method according to claim 1, characterized in that: Forming a second thin film encapsulation layer on the first thin film encapsulation layer includes: forming a second thin film encapsulation material layer on the first thin film encapsulation layer; Etching the second thin film encapsulation material layer to form the second thin film encapsulation layer; The height difference between the upper surface of the second thin film encapsulation layer in the pixel area and the upper surface of the second thin film encapsulation layer between the pixel areas is less than or equal to 0.1 μm, or the height difference between the upper surface of the second thin film encapsulation layer and the upper surface of the first thin film encapsulation layer is less than or equal to 0.1 μm.

14. The manufacturing method according to claim 13, characterized in that: Etching the second thin film encapsulation material layer to form the second thin film encapsulation layer includes: forming a planarization layer on the second thin film encapsulation material layer; The planarization layer and the second thin film encapsulation material layer are etched to form the second thin film encapsulation layer.

15. The manufacturing method according to claim 13, characterized in that: Etching the second thin film encapsulation material layer to form the second thin film encapsulation layer includes: The second thin film encapsulation material layer is etched by a chemical mechanical polishing process to form the second thin film encapsulation layer.

16. The manufacturing method according to claim 1, characterized in that: The plurality of pixel regions include at least two types of pixel regions, the organic light-emitting layers include at least two types of organic light-emitting layers, and the organic light-emitting layers of different types are used to emit light of different colors; An organic light-emitting layer, a cathode and a first thin-film encapsulation layer are formed on the upper layer of the anode, including: The organic light-emitting layer, the cathode and the first thin-film encapsulation layer of corresponding types are formed on the upper layer of the anode in the pixel regions of different types.

17. The manufacturing method according to claim 16, characterized in that: The at least two types of pixel regions include a first type of pixel region, a second type of pixel region, and a third type of pixel region, and the at least two types of organic light-emitting layers include a first type of organic light-emitting layer, a second type of organic light-emitting layer, and a third type of organic light-emitting layer; Forming the organic light-emitting layer, the cathode and the first thin-film encapsulation layer of corresponding types on the upper layer of the anode in different types of pixel regions, respectively, comprises: Sequentially forming a first organic light-emitting material layer, a first cathode material layer and a first thin-film encapsulation material layer on the upper layer of the anode; Etching the first organic light-emitting material layer, the first cathode material layer and the first thin-film encapsulation material layer to form the first organic light-emitting layer, the cathode and the first thin-film encapsulation layer on the upper layer of the anode in the first pixel region; Sequentially forming a second organic light-emitting material layer, a second cathode material layer, and a second thin-film encapsulation material layer on the upper layer of the anode; Etching the second organic light-emitting material layer, the second cathode material layer and the second thin-film encapsulation material layer to form the second organic light-emitting layer, the cathode and the first thin-film encapsulation layer on the upper layer of the anode in the second pixel region; Sequentially forming a third organic light-emitting material layer, a third cathode material layer and a third thin-film encapsulation material layer on the upper layer of the anode; The third organic light-emitting material layer, the third cathode material layer and the third thin-film encapsulation material layer are etched to form the third organic light-emitting layer, the cathode and the first thin-film encapsulation layer on the anode upper layer in the third pixel region.

18. An organic light emitting display device, characterized in that: The organic light-emitting display device is manufactured by the manufacturing method of the organic light-emitting display device according to any one of claims 1 to 17.

19. An organic light emitting display device, characterized in that: include: A substrate, the substrate comprising a plurality of pixel regions arranged at intervals; an anode disposed in the pixel region; A first insulating layer disposed between the pixel regions; an auxiliary cathode layer disposed on the first insulating layer; A first partition layer is disposed on the auxiliary cathode layer, wherein an edge of the first partition layer exceeds an edge of the auxiliary cathode layer; An organic light-emitting layer is disposed on the anode, and the organic light-emitting layers in adjacent pixel regions are separated from each other by the first partition layer and are not connected to each other; A cathode disposed on the organic light-emitting layer, the cathode being electrically connected to the adjacent auxiliary cathode layer; A first thin film encapsulation layer is disposed on the cathode, wherein the first thin film encapsulation layer covers the cathode and exposes the first isolation layer; A second thin film encapsulation layer is disposed on the first thin film encapsulation layer, and the second thin film encapsulation layer covers the first thin film encapsulation layer and the first isolation layer.

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