Atomic layer deposition apparatus

Abstract

An atomic layer deposition apparatus according to an embodiment of the present invention comprises: a chamber accommodating a plurality of wafers; a plurality of heaters disposed on a surface of the chamber; and a control unit controlling the heaters, in which the chamber is divided into a plurality of regions in a first direction defined as an extension direction of the chamber, the plurality of heaters are respectively disposed in the plurality of regions of the chamber, and the control unit individually controls temperatures of the plurality of heaters.

Description

Technical Field

[0001] Embodiments of the present invention relate to atomic layer deposition apparatus. Background Art

[0002] Atomic layer deposition (ALD) technology is a technology for depositing a thin film (i.e., a protective film) on a memory element of a semiconductor, that is, a technology for thermally decomposing a gas flowing into a vacuum chamber and depositing the decomposed gas as an atomic layer. Currently, efforts are being made to improve the apparatus and process for forming a high-quality thin film on a substrate.

[0003] Recently, a technology for shortening the processing time of a single wafer using a batch deposition apparatus for simultaneously processing a plurality of wafers with one deposition apparatus has been developed.

[0004] The atomic layer deposition apparatus includes a loading unit for supplying wafers, a vacuum chamber unit for performing atomic layer deposition in a vacuum atmosphere, an outlet for exhausting gas after a reaction, a frame for supporting the deposition apparatus, a cover, and the like.

[0005] In this case, it is necessary to uniformly transfer the temperature into the processing chamber to thermally decompose the gas flowing into the vacuum chamber, and shortening the time to stably reach the required temperature is also one of the factors to be considered.

[0006] Typically, in an atomic layer deposition apparatus, a heater is located inside or outside a chamber to provide heat to the chamber. However, when the heater is located inside the chamber, the life of the heater is reduced and the volume of the chamber is increased. Therefore, from the perspective of cost and management associated with these issues, in industrial applications of the apparatus, the heater is located outside the chamber. The heater located outside the chamber is provided in the form of being inserted into the outer wall of the chamber, or in the form of being erected outside the chamber while being spaced a certain distance from the chamber.

[0007] However, when the heater is inserted into the outer wall of the chamber, it is difficult to separate the heater from the chamber, and thus it is difficult to replace the heater or recycle the chamber. In addition, when the heater is arranged to stand upright outside the chamber while being spaced a certain distance from the chamber, the heat loss of the heater increases due to the distance from the chamber, and there is a problem that uniform heat transfer into the chamber cannot be achieved. Summary of the invention

[0008] Technical issues

[0009] A problem to be solved by the present invention is to provide an atomic layer deposition apparatus having a heater structure that enables easy replacement of a heater and allows heat to be uniformly transferred into a chamber.

[0010] However, this problem is exemplary, and the problem of the present invention is not limited thereto.

[0011] Technical Solution

[0012] According to an embodiment of the present invention, an atomic layer deposition device includes: a chamber for accommodating a plurality of wafers; a plurality of heaters arranged on the surface of the chamber; and a control unit for controlling the heaters, wherein the chamber is divided into a plurality of zones in a first direction defined as an extension direction of the chamber, the plurality of heaters are respectively arranged in the plurality of zones of the chamber, and the control unit individually controls the temperatures of the plurality of heaters.

[0013] One of the multiple zones of the chamber may include a left side portion, a right side portion, an upper side portion and a lower side portion, the heater may be arranged on each of the left side portion, the right side portion, the upper side portion and the lower side portion, and the control unit may individually control the heater arranged on each of the left side portion, the right side portion, the upper side portion and the lower side portion.

[0014] In the one zone, shapes of the heaters disposed on the left side portion and the right side portion may be the same, and shapes of the heaters disposed on the upper side portion and the lower side portion may be the same.

[0015] A size of each of the plurality of zones located at outermost portions at both sides of the chamber may be smaller than a size of each of the zones located at portions other than the outermost portions at both sides of the chamber.

[0016] The plurality of wafers may be disposed in zones other than the zones located at the outermost portions of both sides of the chamber among the plurality of zones.

[0017] The plurality of zones may include a first zone closest to an insertion portion (IW) of the wafer, and a fifth zone farthest from the insertion portion (IW) of the wafer, and the control unit may set a temperature of the first zone higher than a temperature of the fifth zone.

[0018] A heating pipe (Hp) may be provided in the plurality of heaters.

[0019] Each of the plurality of heaters may include a plurality of sub-heaters arranged in the plurality of zones of the chamber, the chamber may include a heater fixing portion fixing the heater to the chamber, and the heater fixing portion may be arranged in a zone corresponding to a zone between the plurality of sub-heaters adjacent in the first direction.

[0020] The plurality of heaters may be connected to or separated from the chamber.

[0021] Other aspects, features, and advantages in addition to those described above will become apparent from the detailed description, claims, and following drawings for implementing the invention.

[0022] Beneficial Effects

[0023] In the atomic layer deposition apparatus according to the embodiment of the present invention, since the heater is connected to the surface of the process chamber, heat can be uniformly transferred into the chamber, thereby increasing the heat transfer effect and ensuring the effect of shortening the temperature increase time.

[0024] Furthermore, in the atomic layer deposition apparatus according to the embodiment of the present invention, since the heater can be attached to the surface of the chamber without being spaced apart from the chamber, the loss of heat transferred from the heater can be minimized.

[0025] Furthermore, the atomic layer deposition apparatus according to the embodiment of the present invention may have an advantage of facilitating maintenance of the deposition apparatus because a heater connected to a surface of a chamber may be detached, connected, and easily replaced.

[0026] In addition, in the atomic layer deposition device according to an embodiment of the present invention, since the heater in each zone and at each position located on the upper side, lower side, left side and right side of the chamber can be individually controlled by the control unit, the temperature can be controlled differently according to the accommodation position and state of the wafer accommodated inside the chamber, thereby enabling more precise temperature control.

[0027] The effects of the present invention are not limited to the above-described effects, and other effects that are not described will be clearly understood by those skilled in the art from the description of the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is an exploded perspective view showing an atomic layer deposition apparatus having a heater provided thereon according to an embodiment of the present invention.

[0029] Figure 2 is shown coupled to the chamber Figure 1 View of the heater.

[0030] Figure 3 is along Figure 2 A cross-sectional view along line AA' of FIG. 1 and showing a heating tube placed in the heater.

[0031] Figure 4 is a block diagram showing a configuration of an atomic layer deposition apparatus according to an embodiment of the present invention.

[0032] Figure 5 is a block diagram showing the arrangement and control of the heater for each zone according to one embodiment of the present invention.

[0033] Figure 6 is a block diagram illustrating a structure in which a wafer is not disposed in a region of an outermost portion of a chamber according to an embodiment of the present invention.

[0034] Figure 7 is a graph showing that the temperature of a heater is set higher as the heater approaches an insertion portion of a wafer according to an embodiment of the present invention.

[0035] Figure 8 is an image of an experimental result showing that temperature uniformity is ensured for wafers in a chamber when a heater is operated according to an embodiment of the present invention. DETAILED DESCRIPTION

[0036] The present invention may be modified in various ways and have various embodiments, and specific embodiments will be illustrated in the accompanying drawings and described in detail in the description of the present invention. However, this is not intended to limit the present invention to specific embodiments, and it should be understood that the present invention includes all modifications, equivalents or substitutions included in the spirit and technical scope of the present invention. When describing the present invention, the same identification numbers are used for the same parts, even if they are shown in different embodiments.

[0037] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the accompanying drawings, the same or corresponding components are denoted by the same reference numerals and overlapping descriptions thereof will be omitted.

[0038] In the following embodiments, terms such as “first” and “second” are not intended to be limiting but are used for the purpose of distinguishing one component from another.

[0039] In the following embodiments, a singular expression includes a plural expression unless the context clearly indicates otherwise.

[0040] In the following embodiments, terms such as “include” and “have” mean that the features or components described in the specification are present, and do not preclude the possibility of adding one or more other features or components.

[0041] In the drawings, the size of the components may be enlarged or reduced for ease of description. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for ease of description, and therefore the present invention is not necessarily limited to the contents shown.

[0042] In the case of certain embodiments that can be implemented in different ways, a specific process order can be performed in an order different from the order described. For example, two processes described sequentially can be performed substantially simultaneously, or can be performed in an order opposite to the order described.

[0043] The terms used in this application are only used to describe specific embodiments and are not intended to limit the present invention. In this application, it should be understood that terms such as "including" and "having" are intended to specify that the features, quantities, steps, operations, components, parts or combinations thereof described in the specification are present, and do not preclude the possibility of existing or adding one or more other features, quantities, steps, operations, components, parts or combinations thereof.

[0044] The following will refer to Figures 1 to 5 An atomic layer deposition apparatus according to an embodiment of the present invention is described.

[0045] Figure 1 is an exploded perspective view showing an atomic layer deposition apparatus having a heater provided thereon according to an embodiment of the present invention. Figure 2 is shown coupled to the chamber Figure 1 View of the heater. Figure 3 is along Figure 2 A cross-sectional view along line AA' of FIG. 1 and showing a heating tube placed in the heater. Figure 4 is a block diagram showing a configuration of an atomic layer deposition apparatus according to an embodiment of the present invention. Figure 5 is a block diagram showing the arrangement and control of the heater for each zone according to one embodiment of the present invention.

[0046] refer to Figures 1 to 5 , an atomic layer deposition apparatus according to an embodiment of the present invention includes a chamber 10 for storing a plurality of wafers W, a plurality of heaters H disposed on a surface of the chamber 10, and a control unit for controlling power, temperature, etc. of each of the heaters H. In this case, the chamber 10 may be divided into a plurality of zones. For example, the chamber 10 is divided into a plurality of zones along an extension direction (a first direction) of the chamber 10, a plurality of heaters H are arranged in each of the plurality of zones of the chamber 10, and the control unit controls the plurality of heaters individually.

[0047] A plurality of wafers W may be inserted into the chamber 10. By injecting a process gas into the chamber 10 into which the plurality of wafers W are inserted, a deposition process may be performed on the wafers.

[0048] According to the present embodiment, the chamber may be formed in an elongated rectangular parallelepiped shape. In this case, a rear cover 11 and a supply line unit 13 including a plurality of tubes extending into the chamber 10 may be formed at one end of the chamber 10 in the longitudinal direction. The supply line unit 13 may supply a process gas (e.g., trimethylaluminum (TMA) or Al(CH3)3) into the chamber 10.

[0049] The plurality of wafers W may be inserted into the chamber through a side opposite to the rear cover 11. After the insertion of the plurality of wafers W is completed, a door (not shown) closes a portion through which the plurality of wafers W are inserted, thereby sealing the inside of the chamber 10.

[0050] The atomic layer deposition process according to the present embodiment is a process of thermally decomposing the gas flowing into the chamber 10 under a vacuum state and depositing the decomposed gas as an atomic layer. For thermal decomposition, it is basically necessary to uniformly transfer the temperature into the chamber. In addition, during the temperature increase process, it is necessary to shorten the time to stably reach the desired temperature.

[0051] Typically, the heater is disposed outside the chamber, at a position away from the chamber, to increase the temperature of the chamber, but when the heater is disposed at a position away from the chamber, heat is difficult to be transferred to the chamber evenly, and considerable heat loss occurs because the heater must pass through an air layer during heat transfer.

[0052] Therefore, in the atomic layer deposition apparatus according to the present embodiment, since each of the heaters H is disposed on the surface S of the chamber 10, direct heat conduction is caused between the heater H and the surface S, which minimizes the loss of heat generated from the heater H and maximizes the heat transfer effect, thereby shortening the temperature increase time in the chamber 10. For example, the heater H may be disposed in contact with the surface S of the chamber 10. In detail, the heater H may be disposed in direct contact with the surface S of the chamber 10.

[0053] Furthermore, through the structure in which the heater H is provided to surround the entire surface of the chamber 10 , the atomic layer deposition apparatus may have an advantage of allowing heat to be uniformly transferred into the chamber 10 .

[0054] In addition, in the atomic layer deposition device according to the present embodiment, since a system is introduced in which heaters are respectively arranged in a plurality of zones separated in the chamber 10 and the heaters are individually controlled by a control unit, temperature control can be performed individually according to the accommodation position and state of the wafer accommodated in the chamber 10, thereby enabling more precise temperature control of the chamber 10.

[0055] According to the present embodiment, a temperature sensor (not shown) may be provided inside the chamber 10. In this case, the control unit compares a preset standard temperature value with the temperature value inside the chamber measured by the temperature sensor, and when there is a difference between the preset standard temperature value and the actual temperature value inside the chamber, the temperature of the heater may be increased to compensate for the temperature difference. In addition, a temperature sensor may be provided in each zone or at each position in a zone, and when there is a difference between the temperature measurement value measured by the temperature sensor provided at each position and the preset standard temperature value at each position, the difference between the temperature value at one position and the standard temperature value is compared with the difference between the temperature value at another position and the standard temperature value, and by reflecting the different differences at each position, the temperature added at each position is different, so that the heater corresponding to each position can be controlled individually.

[0056] refer to Figure 3 , each of the plurality of heaters H according to the present embodiment has a heating pipe Hp built therein. The heating pipes Hp are uniformly arranged in the heater H in a zigzag structure, so that the heater H transfers heat to the chamber 10 uniformly.

[0057] A plurality of wafers W may be accommodated in each of a plurality of zones (a first zone, a second zone, . . . , and an Nth zone) partitioned in the chamber 10. The control unit may differently control the heater in each zone according to the state of the wafers W accommodated in each zone.

[0058] According to this embodiment, Figure 1 and Figure 2 , one of the plurality of zones of the chamber 10 includes a left portion S1, a right portion S2, an upper portion S3, and a lower portion S4, and heaters H1, H2, H3, and H4 are respectively disposed in the left portion S1, the right portion S2, the upper portion S3, and the lower portion S4. In this case, the control unit may individually control each of the heaters H1, H2, H3, and H4.

[0059] That is, the chamber 10 according to the present embodiment has a rectangular parallelepiped structure having an upper side, a lower side, a left side, and a right side, heaters can be respectively arranged on the upper side, the lower side, the left side, and the right side, and the heaters arranged on the upper side, the lower side, the left side, and the right side can be controlled separately. Therefore, when each position of the plurality of wafers W accommodated in the chamber 10 requires local temperature control, the temperature control in the chamber 10 can be more accurately performed by differently controlling the temperatures of the heaters arranged on the upper side, the lower side, the left side, and the right side.

[0060] According to the present embodiment, a plurality of heaters H may be connected to or detached from the chamber 10. More specifically, a plurality of heaters H individually installed in a zone of the chamber 10 may be individually connected to or detached from the chamber 10. In addition, a plurality of heaters H individually installed on the upper side, the lower side, the left side, and the right side of one zone of the chamber 10 may be individually connected to or detached from the chamber 10.

[0061] For example, the heater H may include a first heater H1 disposed on a left portion S1 of the chamber 10, a second heater H2 disposed on a right portion S2 of the chamber 10, a third heater H3 disposed on an upper portion S3 of the chamber 10, and a fourth heater H4 disposed on a lower portion S4 of the chamber 10.

[0062] In addition, each of the first to fourth heaters H1, H2, H3, and H4 may include a plurality of sub-heaters sequentially arranged along the first direction. For example, the first heater H1 may include a plurality of sub-heaters H11, H12, H13, H14, and H15 sequentially arranged along the first direction on the left side portion S1, and the second heater H2 may include a plurality of sub-heaters H21, H22, H23, H24, and H25 sequentially arranged along the first direction on the right side portion S2. In addition, the third heater H3 may include a plurality of sub-heaters H31, H32, H33, H34, and H35 sequentially arranged along the first direction on the upper side portion S3, and the fourth heater H4 may include a plurality of sub-heaters H41, H42, H43, H44, and H45 sequentially arranged along the first direction on the lower side portion S4.

[0063] The number of sub-heaters included in each of the first to fourth heaters H1, H2, H3, and H4 may correspond to the number of zones divided in the chamber 10. For example, when the chamber 10 is divided into five zones (first to fifth zones), each of the heaters H1, H2, H3, and H4 may include five sub-heaters (first to fifth sub-heaters).

[0064] In addition, the sub-heater included in each of the first to fourth heaters H1, H2, H3, and H4 may be spaced apart from adjacent sub-heaters in a first direction, or may contact each other due to thermal expansion when heated. Here, the first direction may be a direction from a door (not shown) toward the rear cover 11 in an extending direction of the chamber 10.

[0065] The chamber 10 may include a heater fixing portion 14 fixing the heater H to the chamber 10. The heater fixing portion 14 may be disposed on an outer surface of the heater H so that the heater H is in close contact with the chamber 10. The heater fixing portion 14 may press the heater H from the outside of the chamber 10 to the inside of the chamber 10. The heater fixing portion 14 may maximize the surface contact area of ​​the heater H with the outer surface of the chamber 10 to improve the thermal conductivity of the heat transferred from the heater H to the chamber 10.

[0066] The chamber 10 may include a heater fixing portion 14 that protrudes to separate each zone. In this case, each heater H may be installed between the heater fixing portions 14. In detail, the heater fixing portion 14 may be disposed on a zone corresponding to the sub-heater. The heater fixing portion 14 may be disposed on two sub-heaters that are adjacent to each other along the first direction. For example, the heater fixing portion 14 may be disposed in a zone corresponding to a zone along the first direction between sub-heaters included in each of the first to fourth heaters H1, H2, H3, and H4. In this case, the width of the heater fixing portion 14 along the first direction may be greater than the gap between two adjacent sub-heaters. Therefore, the heater fixing portion 14 may be disposed to press the edge zones of two adjacent sub-heaters so that the heater H is in close contact with the chamber 10.

[0067] The number of heater fixing parts 14 provided on one of the first to fourth heaters H1, H2, H3, and H4 may be less than the number of sub-heaters included in one heater. For example, the number of heater fixing parts 14 provided on one heater may satisfy m=n-1 (m means the number of heater fixing parts, and n means the number of sub-heaters) with respect to the number of sub-heaters included in one heater.

[0068] For example, with respect to the heater fixing portion 14 provided on the first heater H1, the heater fixing portion 14 may be provided in a region corresponding to a region between the first sub-heater H11 and the second sub-heater H12 of the first heater H1 and in a region corresponding to a region between the second sub-heater H12 and the third sub-heater H13 of the first heater H1. In addition, the heater fixing portion 14 may be provided in a region corresponding to a region between the third sub-heater H13 and the fourth sub-heater H14 of the first heater H1 and in a region corresponding to a region between the fourth sub-heater H14 and the fifth sub-heater H15 of the first heater H1.

[0069] Alternatively, the number of heater fixing parts 14 provided on one of the first to fourth heaters H1, H2, H3, and H4 may be equal to the number of sub-heaters included in one heater. For example, the number of heater fixing parts 14 provided on one heater may satisfy m=n (m means the number of heater fixing parts, and n means the number of sub-heaters) with respect to the number of sub-heaters included in one heater. In this case, the heater fixing part 14 may be provided in an area corresponding to the central area of ​​the sub-heater to press the heater H.

[0070] In this way, through the heater system in which heaters are individually connected to the zones of the chamber 10 and the upper, lower, left, and right sides of one zone, even when one of the plurality of heaters is broken or damaged, only the corresponding heater can be simply removed and replaced with a new or repaired heater, so the usability of the chamber on which the heater is installed can be enhanced. That is, by modularizing the heater installed in each part of the chamber 10, the maintainability of the device can be improved by making it easy to connect and detach the heater to and from the chamber 10.

[0071] In addition, referring to the drawings, in one zone of the chamber 10, the shapes of the heaters H1 and H2 disposed on the left side portion S1 and the right side portion S2 may be the same, and the shapes of the heaters H3 and H4 disposed on the upper side portion S3 and the lower side portion S4 may be the same. Therefore, the heaters H1 and H2 disposed on the left side portion S1 and the right side portion S2 may be manufactured as one module, and the heaters H3 and H4 disposed on the upper side portion S3 and the lower side portion S4 may be manufactured as another module, so that in the heater module covering one zone of the chamber, only two heater module structures can completely cover one zone formed by four sides, thereby simplifying the heater module into two modules and improving the replaceability of the heater module.

[0072] In the following, reference will be made to Figure 6 Describe the structure and characteristics of the outermost regions on both sides of the chamber. Figure 6 For content not shown in Figures 1 to 5 The content shown in and its description.

[0073] Figure 6 is a block diagram illustrating a structure in which a wafer is not disposed in a region of an outermost portion of a chamber according to an embodiment of the present invention.

[0074] refer to Figure 1 , Figure 2 and Figure 6In the atomic layer deposition apparatus according to one embodiment of the present invention, the size of each of the plurality of zones located at the outermost portions on both sides of the chamber may be smaller than the size of each of the zones located at portions other than the outermost portions on both sides of the chamber 10. That is, referring to Figure 2 , the size of each of the first zone and the fifth zone may be smaller than the size of each of the second zone, the third zone, and the fourth zone. Here, the first zone may be the zone closest to the insertion portion IW of the wafer W and closest to the door (not shown), and the fifth zone may be the zone farthest from the insertion portion IW of the wafer W and closest to the rear cover 11 of the chamber 10. In addition, the second zone to the fourth zone may be zones sequentially arranged between the first zone and the fifth zone.

[0075] During the wafer deposition process, the plurality of wafers W may be accommodated in the central space of the chamber 10 except for the spaces at both end portions of the chamber 10. That is, the plurality of wafers W may be accommodated only in the central space except for the spaces at both end portions of the chamber 10. Figure 2 This is because, in the case where the wafer is set on the outer portion of the chamber during deposition, it is difficult to ensure quality due to the possibility of gas leakage.

[0076] According to this embodiment, the size of each zone at the outermost part of both sides of the chamber can be smaller than the size of each zone arranged in the central part of the chamber. Thus, the extra space area in the part where the wafer is not arranged can be reduced, thereby improving space utilization.

[0077] Therefore, reference Figure 2 , the shapes of the heaters H11, H15, H21, and H25 disposed on the left parts S11 and S15 and the right parts S21 and S25 of the zone located at the outermost parts on both sides of the chamber may be formed to have a smaller size than the shapes of the heaters H12, H13, H14, H22, H23, and H24 disposed on the left parts S12, S13, and S14 and the right parts S22, S23, and S24 of the zone located in the center part of the chamber. In addition, the shapes of the heaters H31, H35, H41, and H45 disposed on the upper parts S31 and S35 and the lower parts S41 and S45 of the zone located at the outermost parts on both sides of the chamber may be formed to have a smaller size than the shapes of the heaters H32, H33, H34, H42, H43, and H44 disposed on the upper parts S32, S33, and S34 and the lower parts S42, S43, and S44 of the zone located in the center part of the chamber.

[0078] However, in the zone at the outermost portion located on both sides of the chamber, the shapes of the heaters H11, H15, H21, and H25 disposed on the left side portions S11 and S15 and the right side portions S21 and S25 may be the same, and the shapes of the heaters H31, H35, H41, and H45 disposed on the upper side portions S31 and S35 and the lower side portions S41 and S45 may be the same. Therefore, the heaters H11, H15, H21, and H25 disposed on the left side portions S11 and S15 and the right side portions S21 and S25 may be manufactured as one module, and the heaters H31, H35, H41, and H45 disposed on the upper side portions S31 and S35 and the lower side portions S41 and S45 may be manufactured as another module, and therefore, in the heater module covering one zone of the chamber, only two heater module structures may completely cover one zone formed by four sides, thereby simplifying the heater module into two modules and improving the replaceability of the heater module.

[0079] In the following, reference will be made to Figure 7 Temperature control according to one embodiment of the present invention is described. Figure 7 For content not shown in Figures 1 to 6 The content shown in and its description.

[0080] Figure 7 is a graph showing that the temperature of a heater is set higher as the heater approaches an insertion portion of a wafer according to an embodiment of the present invention.

[0081] refer to Figure 1 and Figure 7 , as the heater approaches the insertion portion IW of the wafer, the control unit can set the temperature of the heater H to be higher. That is, the control unit can set the temperature of the heater H in the first zone closest to the insertion portion IW of the wafer to be higher than the temperature of the heater H in the fifth zone farthest from the insertion portion IW of the wafer. In addition, the control unit can set the temperature of each of the heaters H in the second zone to the fourth zone located therebetween (between the first zone and the fifth zone) to a temperature between the temperatures of the heaters H in the first zone and the fifth zone. For the wafer insertion portion IW, the chamber 10 is opened and closed when the wafer is inserted, and thus the maximum amount of heat loss can occur in this portion. Therefore, according to the present embodiment, as the heater approaches the insertion portion IW of the wafer, the control unit controls the temperature of the heater H to be relatively higher, thereby more uniformly controlling the temperatures of the plurality of wafers W accommodated in the chamber 10. In addition, although Figure 7The example shows that as the heater approaches the insertion part IW of the wafer, the control unit controls the temperature of the heater H linearly to be higher, but the present invention is not limited to this, and the control unit can control the temperature nonlinearly or in a step shape according to the size of the chamber 10, the number of wafers W, the deposition material, etc.

[0082] Figure 8 is an image of an experimental result showing that temperature uniformity is ensured for wafers in a chamber when a heater is operated according to an embodiment of the present invention.

[0083] More specifically, Figure 8 An image is shown of an experimental result showing temperature uniformity in a space where a wafer is located within a chamber when temperature control of a heater is performed individually for each zone P1 , P2 , P3 , P4 , P5 , P6 , or P7 where the wafer is located within the chamber.

[0084] refer to Figure 8 , it can be seen that the temperature inside the chamber fluctuates within a temperature range of about 5 degrees, from a minimum of 249.43 degrees to a maximum of 255.03 degrees. That is, by individually controlling the temperature of each zone of the chamber using the heater according to the present embodiment, the temperature range of the chamber can be maintained at about 5 degrees, thereby ensuring temperature uniformity throughout the chamber.

[0085] Although the present invention has been described with reference to the embodiments illustrated in the accompanying drawings, these are merely examples. It will be fully appreciated by those skilled in the art that various modifications and equivalent other embodiments may be derived from the embodiments. Therefore, the actual technical protection scope of the present invention should be determined based on the appended claims.

[0086] The specific technical contents described in the embodiments are only examples and do not limit the technical scope of the embodiments. In order to describe the present invention concisely and clearly, the description of common technologies and configurations of related technologies may be omitted.

[0087] In addition, the connection or non-connection of the lines between the components shown in the figures is only an example of functional connection and / or physical or circuit connection, and can be represented in an actual device by alternative or additional various functional connections, physical connections or circuit connections. In addition, if there is no specific mention such as "essential" or "important", the component may not be an absolutely necessary component for applying the present invention.

[0088] As used in the description and claims of the present invention, the terms "above," "said," and similar designations thereof may refer to both the singular and the plural, unless specifically limited otherwise.

[0089] Furthermore, when a range is described in the embodiments, the present invention is deemed to include the invention to which individual values ​​belonging to the range are applied (unless otherwise described), and it is the same as describing each individual value constituting the range in the description of the present invention.

[0090] In addition, when there is no explicit description or the opposite about the order of steps constituting the method according to the embodiment, the steps can be performed in any suitable order. The embodiment is not necessarily limited to the description order of the above steps. Unless otherwise limited by the claims, any example or exemplary term (e.g., "for example", "etc.") used in the embodiment is only intended to describe the embodiment in detail and is not limited to the scope of the embodiment by means of these examples or exemplary terms. In addition, it will be understood by those skilled in the art that various modifications, combinations and changes can be made according to the design conditions and factors within the scope of the attached claims or their equivalents.

Claims

1. Atomic layer deposition device, comprising: a chamber that holds multiple wafers; a plurality of heaters disposed on a surface of the chamber; as well as a control unit for controlling the heater, wherein the chamber is divided into a plurality of zones in a first direction defined as an extension direction of the chamber, The plurality of heaters are respectively disposed in the plurality of zones of the chamber, and The control unit individually controls temperatures of the plurality of heaters.

2. The atomic layer deposition apparatus according to claim 1, wherein one of the plurality of zones of the chamber comprises a left side portion, a right side portion, an upper side portion, and a lower side portion, The heater is provided on each of the left side portion, the right side portion, the upper side portion, and the lower side portion, and The control unit individually controls the heater provided on each of the left side portion, the right side portion, the upper side portion, and the lower side portion.

3. The atomic layer deposition apparatus according to claim 2, wherein: In the one zone, shapes of the heaters provided on the left side portion and the right side portion are the same, and shapes of the heaters provided on the upper side portion and the lower side portion are the same.

4. The atomic layer deposition apparatus according to claim 1, wherein a size of each of the plurality of zones located at the outermost portions on both sides of the chamber is smaller than a size of each zone located at portions other than the outermost portions on both sides of the chamber. 5 . The atomic layer deposition apparatus according to claim 4 , wherein the plurality of wafers are disposed in zones other than the zones located at the outermost portions on both sides of the chamber among the plurality of zones.

6. The atomic layer deposition apparatus of claim 1, wherein the plurality of zones comprises: a first region closest to an insert portion (IW) of the wafer; as well as a fifth region farthest from the insert portion (IW) of the wafer, and The control unit sets the temperature of the first zone to be higher than the temperature of the fifth zone. 7 . The atomic layer deposition apparatus according to claim 1 , wherein a heating pipe (Hp) is provided in the plurality of heaters.

8. The atomic layer deposition apparatus according to claim 1, wherein each of the plurality of heaters comprises a plurality of sub-heaters disposed in the plurality of zones of the chamber, The chamber includes a heater fixing portion fixing the heater to the chamber, and The heater fixing portion is disposed in a region corresponding to a region between the plurality of sub-heaters adjacent in the first direction. 9 . The atomic layer deposition apparatus according to claim 1 , wherein the plurality of heaters are connected to or detached from the chamber.

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