Integrated device, detection device, terminal and manufacturing method

Abstract

The invention discloses an integrated device, a detection device, a terminal and a manufacturing method, relates to the technical field of electronics, and is used for solving the problems of heat dissipation of a sensing chip and easy occurrence of chip stress. The integrated device comprises a substrate layer, a sensing chip and a PCB, the sensing chip is arranged on the substrate layer; the PCB is arranged on the substrate layer, the PCB is provided with an opening, the sensing chip is located in the opening, and the sensing chip is connected with the PCB through a transmission line; wherein the difference value between the CTE (coefficient of thermal expansion) of the substrate layer and the CTE of the sensing chip is smaller than a first preset threshold value. Therefore, heat of the sensing chip can be quickly dissipated through the substrate layer, and the deformation quantity of the substrate layer and the deformation quantity of the sensing chip can be basically consistent under the same temperature difference, so that the chip stress problem of the sensing chip is solved.

Description

Integrated device, detection device, terminal and manufacturing method Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to an integrated device, a detection device, a terminal, and a manufacturing method. Background Art

[0002] LiDAR (light detection and ranging) is an optical measurement device that operates by emitting a laser signal toward an object and receiving a reflected return signal. The device then compares the return signal with the laser signal to determine parameters such as the object's position and distance. LiDAR accurately scans surrounding objects to form high-definition images, enabling rapid object identification and decision-making. It has been widely used in applications such as smart cars, intelligent transportation, 3D urban mapping, and atmospheric environmental monitoring.

[0003] As LiDAR's object recognition accuracy continues to improve, along with its beamforming and angular resolution, the signal processing speed and target surface requirements of the LiDAR receiver module are also increasing. This has led to an exponential increase in the module's power consumption. Therefore, there is an urgent need to address the heat dissipation issues associated with this increased power consumption.

[0004] Summary of the Invention

[0005] The present application provides an integrated device, a detection device, a terminal and a manufacturing method for solving the problems of heat dissipation and chip stress of a sensor chip.

[0006] In a first aspect, the present application provides an integrated device, which includes: a substrate layer, a sensor chip and a printed circuit board (PCB), wherein the substrate layer may include a material with good heat dissipation performance, such as a metal material and / or a ceramic material, and the sensor chip may refer to a chip integrated with a sensor; the sensor chip is arranged on the substrate layer, so that the sensor chip can quickly dissipate heat through the substrate layer; the PCB is arranged on the substrate layer, the PCB is provided with an opening, the sensor chip is located in the opening, and the sensor chip is connected to the PCB through a transmission line; wherein the difference between the thermal expansion coefficient CTE of the substrate layer and the CTE of the sensor chip is less than a first preset threshold, that is, the difference obtained by subtracting the CTE of the sensor chip from the CTE of the substrate layer is less than the first preset threshold, or the difference obtained by subtracting the CTE of the sensor chip from the CTE of the substrate layer is less than the first preset threshold, so that the difference between the CTE of the substrate layer and the CTE of the sensor chip is small.

[0007] In the above technical solution, by arranging the sensor chip and the PCB on the substrate layer, the sensor chip is located in an opening on the PCB, the sensor chip is connected to the PCB via a transmission line, and the difference between the CTE of the substrate layer and the CTE of the sensor chip is less than a first preset threshold value, the sensor chip can be quickly dissipated heat through the substrate layer, and under the same temperature difference, the deformation of the substrate layer can be ensured to be substantially consistent with the deformation of the sensor chip, thereby solving the chip stress problem of the sensor chip.

[0008] In one possible implementation of the first aspect, the substrate layer includes a base layer and a boss, and the sensor chip is disposed on the boss. The boss may also be located within an opening in the PCB, that is, both the boss and the sensor chip are located within the opening in the PCB. The sensor chip may also pass through the opening in the PCB. In this possible implementation, disposing the sensor chip on the boss of the substrate layer can further improve the heat dissipation performance of the sensor chip.

[0009] In one possible implementation of the first aspect, the base layer and the boss are integrally formed, that is, the base layer and the boss can be two parts of the same substrate layer formed in a single process, thereby simplifying the process of forming the substrate layer. Alternatively, the base layer and the boss are not integrally formed, but are two independently provided parts. For example, the base layer and the boss can be formed in two separate processes. When the base layer and the boss are two independently provided parts, the boss can be bonded to the base layer with an adhesive or riveted to the base layer with rivets, etc., thereby increasing the flexibility and diversity of forming the base layer and the boss.

[0010] In one possible implementation of the first aspect, the material of the base layer is the same as or different from the material of the boss. In one possible example, the material of the base layer and the material of the boss are the same, for example, both the material of the base layer and the material of the boss are aluminum-based silicon carbide (AlSiC), copper (Cu), aluminum (Al), or tungsten (W). In another possible example, the material of the base layer and the material of the boss are different, for example, the material of the base layer is aluminum (Al), copper (Cu), or tungsten (W), and the material of the boss is aluminum-based silicon carbide (AlSiC).

[0011] In one possible implementation of the first aspect, the sensor chip is bonded to the substrate layer using an adhesive, such as glass adhesive, single-component adhesive, or multi-component adhesive. Alternatively, the sensor chip is welded or riveted to the substrate layer. These possible implementations can increase the diversity and flexibility of the connection between the sensor chip and the substrate layer.

[0012] In a possible implementation of the first aspect, the first preset threshold satisfies: greater than or equal to 0ppm / °C and less than or equal to 10ppm / °C. In one example, the CTE of the sensor chip 220 may be about 2ppm / °C, and the CTE of the substrate layer 210 may be greater than or equal to 3ppm / °C and less than or equal to 12ppm / °C. In the above possible implementation, the sensor chip can be rapidly cooled through the substrate layer, and under the same temperature difference, the deformation of the substrate layer can be ensured to be substantially consistent with the deformation of the sensor chip, thereby solving the chip stress problem of the sensor chip.

[0013] In one possible implementation of the first aspect, the substrate layer includes at least one of the following materials: aluminum-based silicon carbide (AlSiC), aluminum (Al), copper (Cu), and tungsten (W). In this possible implementation, the flexibility and diversity of forming the substrate layer are improved, while ensuring the heat dissipation performance of the sensor chip disposed on the substrate layer.

[0014] In one possible implementation of the first aspect, a height difference exists between the sensor chip and the PCB. For example, the sensor chip is greater than the PCB; alternatively, the sensor chip is less than the PCB. In these possible implementations, the height difference between the sensor chip and the PCB facilitates forming a transmission line between the sensor chip and the PCB during fabrication of the integrated device.

[0015] In one possible implementation of the first aspect, the integrated device further includes a lens structure disposed above the sensor chip and fixed to the substrate layer, with the focal point of the lens structure located on the photosensitive surface of the sensor chip. In this possible implementation, the integrated device may be a receiving module, capable of ensuring that the sensor chip receives the optical signal focused by the lens structure.

[0016] In a possible implementation of the first aspect, the difference between the CTE of the lens structure and the CTE of the sensor chip is less than a second preset threshold; that is, the difference obtained by subtracting the CTE of the sensor chip from the CTE of the lens structure is less than the second preset threshold, or the difference obtained by subtracting the CTE of the lens structure from the CTE of the sensor chip is less than the second preset threshold. Optionally, the second preset threshold satisfies: greater than or equal to 0ppm / °C and less than or equal to 10ppm / °C. In this way, under the same temperature difference, the deformation of the lens structure can be ensured to be basically consistent with the deformation of the sensor chip, so that the focus of the lens structure is always located on the photosensitive surface of the sensor chip, avoiding the problem of reduced MTF of the sensor chip at high and low temperatures due to the inconsistency between the deformation of the lens structure and the deformation of the sensor chip.

[0017] In one possible implementation of the first aspect, the integrated device further includes a protective adhesive for protecting the transmission line. Specifically, during the manufacture of the integrated circuit, the transmission line may be coated with the protective adhesive to prevent peripheral devices of the transmission line from interfering with the transmission signal within the transmission line. Optionally, the protective adhesive may be glass adhesive.

[0018] In one possible implementation of the first aspect, the integrated device further includes a protective glass positioned above the sensor chip. In this possible implementation, positioning the protective glass above the sensor chip prevents dust and debris from falling onto the sensor chip, thereby preventing the sensor chip from affecting its performance.

[0019] In one possible implementation of the first aspect, the PCB is bonded to the substrate layer using an adhesive, such as glass adhesive, single-component adhesive, or multi-component adhesive. Alternatively, the PCB is welded or riveted to the substrate layer. These possible implementations can enhance the diversity and flexibility of the connection between the PCB and the substrate layer.

[0020] In a possible implementation of the first aspect, the sensor chip is a bare chip, which may also be referred to as a grain or a bare crystal, and the grain or bare crystal may refer to a small piece cut from a wafer. Optionally, the sensor chip is a photosensitive chip. In one example, the photosensitive chip is a SPAD chip. In this way, when the integrated device is used in a receiving module in a lidar, the heat dissipation performance of the photosensitive chip in the receiving module can be improved, while avoiding the problem of chip stress on the photosensitive chip due to the inconsistency between the CTE of the photosensitive chip and the CTE of the PCB.

[0021] In a second aspect, a detection device is provided, comprising: a control circuit, and an integrated device provided by the first aspect or any possible implementation of the first aspect, wherein the control circuit is configured to receive a signal output by the integrated device.

[0022] In a third aspect, a terminal is provided, comprising: the detection device provided in the second aspect; optionally, the terminal is a vehicle.

[0023] In a fourth aspect, a method for manufacturing an integrated device is provided, which includes a substrate layer, a sensor chip and a PCB with an opening, the method including: forming the substrate layer, which may include a material with good heat dissipation performance, such as a metal material and / or a ceramic material; arranging the sensor chip on the substrate layer, which may refer to a chip with an integrated sensor; arranging the PCB on the substrate layer, and connecting the sensor chip and the PCB through a transmission line, and the sensor chip is located in the opening of the PCB; wherein the difference between the thermal expansion coefficient CTE of the substrate layer and the CTE of the sensor chip is less than a first preset threshold, that is, the difference obtained by subtracting the CTE of the sensor chip from the CTE of the substrate layer is less than the first preset threshold, or the difference obtained by subtracting the CTE of the sensor chip from the CTE of the substrate layer is less than the first preset threshold, so that the difference between the CTE of the substrate layer and the CTE of the sensor chip is small.

[0024] In a possible implementation of the fourth aspect, the substrate layer includes a base layer and a boss, the sensor chip is arranged on the boss, and the boss can also be located in an opening on the PCB, that is, the boss and the sensor chip are both located in the opening on the PCB, and the sensor chip can also pass through the opening on the PCB.

[0025] In one possible implementation of the fourth aspect, the base layer and the boss are integrally formed, that is, the base layer and the boss can be two parts of the same substrate layer formed in a single process, thereby simplifying the process of forming the substrate layer. Alternatively, the base layer and the boss are not integrally formed, but are two independently provided parts, for example, the base layer and the boss can be formed in two separate processes.

[0026] In a possible implementation manner of the fourth aspect, the material of the base layer is the same as the material of the boss; or, the material of the base layer is different from the material of the boss.

[0027] In a possible implementation of the fourth aspect, the sensor chip is arranged on the substrate layer, including: bonding the sensor chip to the substrate layer by adhesive glue, for example, the adhesive glue can be glass glue, single-component glue or multi-component glue, etc.; or, the sensor chip is welded or riveted to the substrate layer.

[0028] In a possible implementation of the fourth aspect, the first preset threshold satisfies: greater than or equal to 0 ppm / °C and less than or equal to 10 ppm / °C. In one example, the CTE of the sensor chip 220 may be approximately 2 ppm / °C, and the CTE of the substrate layer 210 may be greater than or equal to 3 ppm / °C and less than or equal to 12 ppm / °C.

[0029] In a possible implementation manner of the fourth aspect, the substrate layer includes at least one of the following materials: aluminum-based silicon carbide AlSiC, aluminum Al, copper Cu, and tungsten W.

[0030] In a possible implementation of the fourth aspect, there is a height difference between the sensor chip and the PCB. For example, the height of the sensor chip is greater than the height of the PCB; or the height of the sensor chip is less than the height of the PCB.

[0031] In a possible implementation of the fourth aspect, the integrated device further includes a lens structure, and the method further includes: covering the lens structure above the sensor chip and fixing it on the substrate layer, and the focus of the lens structure is located on the photosensitive surface of the sensor chip.

[0032] In a possible implementation of the fourth aspect, the difference between the CTE of the lens structure and the CTE of the sensor chip is less than a second preset threshold; that is, the difference obtained by subtracting the CTE of the sensor chip from the CTE of the lens structure is less than the second preset threshold, or the difference obtained by subtracting the CTE of the lens structure from the CTE of the sensor chip is less than the second preset threshold.

[0033] In a possible implementation manner of the fourth aspect, the second preset threshold satisfies: greater than or equal to 0 ppm / °C and less than or equal to 10 ppm / °C.

[0034] In a possible implementation of the fourth aspect, the integrated device further includes a protective adhesive, and the method further includes: disposing the protective adhesive on the transmission line to prevent peripheral devices of the transmission line from interfering with a transmission signal in the transmission line. Optionally, the protective adhesive may be glass adhesive.

[0035] In a possible implementation of the fourth aspect, the integrated device further includes a protective glass, and the method further includes: placing the protective glass above the sensor chip. Placing the protective glass above the sensor chip prevents dust and debris from falling onto the sensor chip, thereby preventing the performance of the sensor chip from being affected.

[0036] In a possible implementation of the fourth aspect, arranging the PCB on the substrate layer includes: adhering the PCB to the substrate layer by adhesive; or, welding or riveting the PCB to the substrate layer.

[0037] In a possible implementation manner of the fourth aspect, the sensor chip is a bare chip.

[0038] In a possible implementation of the fourth aspect, the sensor chip is a photosensitive chip.

[0039] It can be understood that the beneficial effects that can be achieved by any of the above-mentioned methods for manufacturing the detection device, terminal and integrated device can refer to the beneficial effects of the integrated device provided above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG1 is a schematic diagram of an application scenario of a laser radar provided in an embodiment of the present application;

[0041] FIG2 is a schematic diagram of the structure of a laser radar provided in an embodiment of the present application;

[0042] FIG3 is a schematic diagram of the structure of another laser radar provided in an embodiment of the present application;

[0043] FIG4 is a schematic diagram of a layout of components in a receiving module;

[0044] FIG5 is a cross-sectional view of an integrated device provided in an embodiment of the present application;

[0045] FIG6 is an exploded view of an integrated device provided in an embodiment of the present application;

[0046] FIG7 is a cross-sectional view of another integrated device provided in an embodiment of the present application;

[0047] FIG8 is a schematic structural diagram of a substrate layer provided in an embodiment of the present application;

[0048] FIG9 is a cross-sectional view of another integrated circuit provided in an embodiment of the present application;

[0049] FIG10 is an exploded view of another integrated device provided in an embodiment of the present application;

[0050] FIG11 is a schematic flow chart of a method for manufacturing an integrated device according to an embodiment of the present application;

[0051] FIG12 is a cross-sectional view of an integrated device provided in an embodiment of the present application during the manufacturing process;

[0052] FIG13 is a cross-sectional view of another integrated device provided in an embodiment of the present application during the manufacturing process. DETAILED DESCRIPTION

[0053] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application.

[0054] The "connection" in the embodiments of the present application can be an electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components, such as A and B, or A and C can be directly connected, C and B can be directly connected, and A and B are connected through C. In some scenarios, "connection" can also be understood as coupling, such as electromagnetic coupling between two inductors. In short, the connection between A and B enables the transmission of electrical energy between A and B.

[0055] The terminal names of the electronic components in the embodiments of the present application are merely exemplary and can be understood as connection terminals or connection points for connecting to other circuit components. In other examples, other terminal names, connection terminal names, or connection point names may also be used. For example, in some scenarios, a terminal may also be referred to as a communication terminal, information transmission terminal, terminal, connection terminal, communication connection terminal, information connection terminal, connection point, communication connection point, information connection point, or electrode, etc.

[0056] An embodiment of the present application provides an integrated device, which can be applied to a detection device, such as a laser radar, in an application scenario. FIG1 exemplarily shows a schematic diagram of an application scenario of a laser radar provided by an embodiment of the present application. In this example, the laser radar 100 is installed on a vehicle, so it is also called a vehicle-mounted laser radar. In addition to vehicle-mounted laser radars, laser radars also include ship-mounted laser radars installed on ships, or airborne laser radars installed on machines, etc. In a possible example, as shown in FIG1 , the laser radar 100 can be installed at the front of the vehicle, so that during the driving of the vehicle, the laser radar 100 can emit a laser signal, which will be reflected by the object after being irradiated by the object, and the target echo signal reflected back can be received by the laser radar 100, and then the laser radar 100 detects the environmental information around the vehicle based on the target echo signal, so as to use the environmental information to assist or control the driving functions of the vehicle, such as including but not limited to automatic driving or assisted driving.

[0057] The laser radar 100 can be a mechanical laser radar, a liquid laser radar, a pure solid-state laser radar, or a hybrid solid-state laser radar (also known as a semi-solid-state laser radar), or can be other types of laser radars, and the present embodiment does not specifically limit this. In addition, the housing of the laser radar 100 can be a rectangular parallelepiped as shown in Figure 1, or it can be a cube, a cylinder, a ring, or a special shape, and the present embodiment does not specifically limit the shape of the housing of the detection device.

[0058] Furthermore, FIG2 shows a schematic diagram of the internal architecture of a laser radar provided in an embodiment of the present application. As shown in FIG2 , the laser radar 100 may include a control circuit 110, a transmitting module 120, a scanning module 130, and a receiving module 140. Among them, the transmitting module 120 and the receiving module 140 include optical elements, such as one or more of lenses, filters, polarizers, reflectors, beam splitters, prisms, windows, and scattering plates. The specific number and type of optical elements included are related to the optical design of the transmitting module 120 and the receiving module 140 in the laser radar 100, and are not specifically limited in the embodiment of the present application. The transmitting module 120 may include at least one laser, and the at least one laser may be connected in series or in parallel to emit a detection laser under the control of the control circuit 110. The scanning module 130 may include one or more of a polygonal rotating mirror, a swinging mirror, a micro-electro-mechanical system (MEMS) scanning mirror, and a prism, and is used to change the scanning angle of the detection laser emitted by the transmitting module 120 under the control of the control circuit 110 so that the detection laser can scan the target objects in the environment. In different types of laser radars, the implementation of the scanning module 130 is different, and some types of laser radars may not have a scanning module, for example, a phased array radar in a solid-state laser radar. The detection laser emitted by the above-mentioned transmitting module 120 will also be reflected by the target object in the environment to generate an echo signal. The receiving module 140 can be used to receive the echo signal corresponding to the detection laser under the control of the control circuit 110, and convert the echo signal into an electrical signal and send it to the control circuit 110. The control circuit 110 determines the characteristics of the target object based on the electrical signal.

[0059] FIG3 shows a schematic diagram of the internal architecture of another laser radar provided in an embodiment of the present application. As shown in FIG3 , the laser radar 100 may include a control circuit 110, a transmitting module 120, and a receiving module 140. The transmitting module 120 and the receiving module 140 include optical elements, such as one or more of lenses, filters, polarizers, reflectors, beam splitters, prisms, windows, and scatterers. The specific number and type of optical elements included are related to the optical design of the transmitting module 120 and the receiving module 140 in the laser radar 100 and are not specifically limited in the embodiment of the present application. The transmitting module 120 may include at least one laser, which may be connected in series or in parallel, and is used to emit a detection laser under the control of the control circuit 110. The transmitting module 120 is also used to change the scanning angle of the detection laser under the control of the control circuit 110 so that the detection laser can scan across target objects in the environment. The detection laser emitted by the transmitting module 120 will also be reflected by the target objects in the environment to generate an echo signal. The receiving module 140 can be used to receive the echo signal corresponding to the detection laser under the control of the control circuit 110. Specifically, it can be used to receive the echo signal within a certain scanning angle, and convert the echo signal into an electrical signal and send it to the control circuit 110. The control circuit 110 determines the characteristics of the target object based on the electrical signal.

[0060] It is understandable that, in actual applications, the above-mentioned laser radar 100 may also include more or fewer components than those shown in FIG. 2 and FIG. 3 , and the embodiments of the present application do not specifically limit this.

[0061] The control circuit 110 in Figures 2 and 3 may include at least one integrated circuit chip, for example, the control circuit 110 may include at least one processor, and when including multiple processors, the types of the included processors may be the same or different. A processor is an element or circuit with processing capabilities, for example, including one or more of the following types: a general-purpose processor, a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), a neural-network processing unit (NPU), a graphics processing unit (GPU), an application processor (AP), a modem processor, an image signal processor (ISP), a video codec, a digital signal processor (DSP), a baseband processor, a network processor (NP), a digital signal processing circuit (DSP), a microcontroller unit (MCU), a programmable logic device (PLD) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components or other integrated chips. The general purpose processor includes, for example, a central processing unit (CPU). In addition, all or part of the integrated circuit chips included in the control circuit 110 can be integrated together to present a system on chip (SoC).

[0062] In one possible embodiment, the receiving module 140 may include a lens structure and a photosensitive chip. The lens structure may be used to focus the echo signal corresponding to the received detection laser onto the photosensitive surface of the photoelectric conversion device, and the photosensitive chip may be used to convert the echo signal into an electrical signal. Optionally, the lens structure may include a lens and a bracket, the bracket being used to secure the lens; the photosensitive chip may be a single photon avalanche diode (SPAD) chip.

[0063] Furthermore, FIG4 shows a schematic diagram of a layout of a receiving module 140. In this layout, a printed circuit board (PCB) is provided. The photosensitive chip in the receiving module 140 is soldered to the PCB. The lens structure cover is provided above the photosensitive chip and fixed to the PCB via adhesive or screws. The photosensitive chip and the PCB are connected via a transmission line. In addition, to protect the transmission line and the photosensitive chip, a protective adhesive can be applied to the transmission line between the photosensitive chip and the PCB, and a protective glass can be provided above the photosensitive chip.

[0064] However, as LiDAR's object recognition accuracy continues to improve, along with the continuous iteration and update of LiDAR's beam and angular resolution, the signal processing speed performance of the receiving module and the target surface requirements of the photosensitive chip are also increasing, resulting in an exponential increase in the power consumption of the receiving module. However, the PCB has poor heat dissipation performance, and the aforementioned layout method of soldering the photosensitive chip to the PCB is not conducive to the heat dissipation of the photosensitive chip. In addition, under the same temperature difference, the deformation of the PCB and the lens structure is inconsistent with the deformation of the photosensitive chip, which can also cause the photosensitive chip to experience chip stress and a reduction in the modulation transfer function (MTF) at high and low temperatures. This MTF is also called resolution.

[0065] Based on this, an embodiment of the present application provides an integrated device, in which a substrate layer is provided, and a sensor chip in the integrated device is provided on the substrate layer, while ensuring that the difference between the coefficient of thermal expansion (CTE) of the substrate layer and the CTE of the sensor chip is relatively small, so that the photosensitive chip can quickly dissipate heat through the substrate layer, and ensure that the deformation of the photosensitive chip and the substrate layer under the same temperature difference is consistent, so as to solve the chip stress problem.

[0066] The specific implementation of the integrated device provided in the embodiments of the present application is described below through specific examples.

[0067] Figures 5 and 6 are schematic structural diagrams of an integrated device provided in an embodiment of the present application. Figure 5 shows a cross-sectional view of the integrated device, and Figure 6 shows an exploded view of the integrated device. The integrated device includes a substrate layer 210, a sensor chip 220, and a PCB 230. The sensor chip 220 is disposed on the substrate layer 210. The PCB 230 is disposed on the substrate layer 210, and the PCB 230 is provided with an opening 231. The sensor chip 220 is located within the opening 231, and the sensor chip 220 is connected to the PCB 230 via a transmission line TL. The difference between the CTE of the substrate layer 210 and the CTE of the sensor chip 220 is less than a first preset threshold.

[0068] The substrate layer 210 may include a material with good heat dissipation performance, for example, a metal material and / or a ceramic material. The metal material may be a single metal, a metal compound, an alloy, or a combination of the above materials.

[0069] In addition, the sensor chip 220 may refer to a chip with an integrated sensor. Optionally, the sensor chip 220 may be a bare chip (die), which may also be referred to as a grain or a bare crystal. The grain or bare crystal may refer to a small piece cut from a wafer. A wafer may also be referred to as a die, which refers to a silicon wafer used to make a silicon semiconductor circuit, and its raw material may be silicon.

[0070] Optionally, the sensor chip 220 is arranged on the substrate layer 210, which can be achieved in any of the following ways. First, the sensor chip 220 is bonded to the substrate layer 210 by an adhesive, for example, the adhesive can be glass glue, single-component glue or multi-component glue, etc. Second, the sensor chip 220 is welded to the substrate layer 210, for example, solder balls are provided on the sensor chip, and the sensor chip is welded to the substrate layer 210 through the solder balls. Third, the sensor chip 220 is riveted to the substrate layer 210, for example, the sensor chip 220 is fixed to the substrate layer 210 by rivets. In actual applications, those skilled in the art can also arrange the sensor chip 220 on the substrate layer 210 in other ways, and the above examples do not limit the embodiments of the present application.

[0071] Similarly, the PCB 230 can be arranged on the substrate layer 210 in a manner similar to that described above. For example, the PCB 230 can be bonded to the substrate layer 210 using adhesives such as glass glue, single-component glue, or multi-component glue; or, the PCB 230 can be soldered to the substrate layer 210 using solder balls or the like; or, the PCB 230 can be riveted to the substrate layer 210 using rivets or the like. FIG6 illustrates the example of the connection between the PCB 230 and the substrate layer 210 using adhesive. In actual applications, those skilled in the art can also arrange the PCB 230 on the substrate layer 210 using other methods, and the above examples do not limit the embodiments of the present application.

[0072] Furthermore, the transmission line TL used to connect the sensor chip 220 and the PCB 230 can be a metal wire. For example, the metal can be gold (Au), that is, the transmission line TL is a gold wire. By using a gold wire to connect the sensor chip 220 and the PCB 230, the attenuation of the transmission signal by the transmission line TL can be reduced.

[0073] Optionally, there is a height difference between the sensor chip 220 and the PCB 230. For example, the height of the sensor chip 220 is greater than the height of the PCB 230; alternatively, the height of the sensor chip 220 is less than the height of the PCB 230. FIG5 illustrates the case where the height of the sensor chip 220 is less than the height of the PCB 230. This height difference between the sensor chip 220 and the PCB 230 facilitates the formation of a transmission line TL between the sensor chip 220 and the PCB 230 during fabrication of the integrated device.

[0074] The difference between the CTE of the substrate layer 210 and the CTE of the sensor chip 220 is less than a first preset threshold, which may include: the difference obtained by subtracting the CTE of the sensor chip 220 from the CTE of the substrate layer 210 is less than the first preset threshold, or the difference obtained by subtracting the CTE of the substrate layer 210 from the CTE of the sensor chip 220 is less than the first preset threshold. In other words, the difference between the CTE of the substrate layer 210 and the CTE of the sensor chip 220 is small. Optionally, the first preset threshold satisfies: greater than or equal to 0ppm / °C and less than or equal to 10ppm / °C. In one example, the CTE of the sensor chip 220 may be approximately 2ppm / °C, and the CTE of the substrate layer 210 may be greater than or equal to 3ppm / °C and less than or equal to 12ppm / °C.

[0075] In the integrated device provided in the embodiment of the present application, the sensor chip 220 and the PCB 230 are arranged on the substrate layer 210. The sensor chip 220 is located in the opening 231 on the PCB 230. The sensor chip 220 is connected to the PCB 230 via a transmission line TL. The difference between the CTE of the substrate layer 210 and the CTE of the sensor chip 220 is less than a first preset threshold value. This enables the sensor chip 220 to quickly dissipate heat through the substrate layer 210. Under the same temperature difference, the deformation of the substrate layer 210 can be ensured to be substantially consistent with the deformation of the sensor chip 220, thereby resolving the chip stress problem of the sensor chip 220.

[0076] In one possible embodiment, the substrate layer 210 includes at least one of the following materials: aluminum-based silicon carbide (AlSiC), aluminum (Al), copper (Cu), and tungsten (W). In one example, the substrate layer 210 includes aluminum-based silicon carbide (AlSiC). In another example, the substrate layer 210 includes aluminum (Al), copper (Cu), or tungsten (W). In yet another example, the substrate layer 210 includes aluminum-based silicon carbide (AlSiC) and aluminum (Al), or aluminum-based silicon carbide (AlSiC) and copper (Cu), or aluminum-based silicon carbide (AlSiC) and tungsten (W).

[0077] When the substrate layer 210 includes aluminum-based silicon carbide (AlSiC), the CTE of the substrate layer 210 can be adjusted by adjusting the Al content in the AlSiC. When the substrate layer 210 includes at least two materials, the CTE of the substrate layer 210 can be adjusted by adjusting the contents of the at least two materials.

[0078] Furthermore, as shown in FIG. 7 , the substrate layer 210 includes a base layer 211 and a boss 212 disposed on the base layer 211 , and the sensor chip 220 is disposed on the boss 212 .

[0079] In which, when the sensor chip 220 is set on the boss 212, the boss 212 can also be located in the opening 231 on the PCB 230, that is, the boss 212 and the sensor chip 220 are both located in the opening 231 on the PCB 230, and the sensor chip 220 can also pass through the opening 231 on the PCB 230 to form a height difference between the sensor chip 220 and the PCB 230, that is, the height of the sensor chip 220 can be greater than the height of the PCB 230 at this time.

[0080] Optionally, as shown in (a) of FIG8 , the base layer 211 and the boss 212 are integrally formed, that is, the base layer 211 and the boss 212 can be two parts of the same substrate layer formed in a single process. Alternatively, as shown in (b) of FIG8 , the base layer 211 and the boss 212 are not integrally formed, but are two independently provided parts, for example, the base layer 211 and the boss 212 can be formed through two independent processes. When the base layer 211 and the boss 212 are two independently provided parts, the boss 212 can be bonded to the base layer 211 by adhesive, or welded by solder balls or riveted to the base layer 211 by rivets.

[0081] Optionally, the material of the base layer 211 and the material of the boss 212 are the same or different. In one possible example, the material of the base layer 211 and the material of the boss 212 are the same, for example, the material of the base layer 211 and the material of the boss 212 are both aluminum-based silicon carbide AlSiC, copper Cu, aluminum Al, or tungsten W. In another possible example, the material of the base layer 211 and the material of the boss 212 are different, for example, the material of the base layer 211 is aluminum Al, copper Cu or tungsten W, and the material of the boss 212 is aluminum-based silicon carbide AlSiC. (a) in Figure 8 is explained by taking the example that the material of the base layer 211 and the material of the boss 212 are the same and both are aluminum-based silicon carbide AlSiC; (b) in Figure 8 is explained by taking the example that the material of the base layer 211 and the material of the boss 212 are different, and the material of the base layer 211 is aluminum Al, and the material of the boss 212 is aluminum-based silicon carbide AlSiC.

[0082] Furthermore, as shown in Figures 5 and 7 , the integrated device may also include a protective adhesive 232 for protecting the transmission line TL. Specifically, during the manufacture of the integrated circuit, the transmission line TL may be coated with the protective adhesive 232 to prevent peripheral devices of the transmission line TL from interfering with the transmission signal within the transmission line TL. Optionally, the protective adhesive 232 may be glass adhesive.

[0083] In addition, as shown in Figures 5 and 7 , the integrated device further includes a protective glass 221 located above the sensor chip 220. In one example, the protective glass 221 can be secured above the sensor chip 220 using the aforementioned protective adhesive 232. Providing the protective glass 221 above the sensor chip 220 prevents dust and debris from falling onto the sensor chip 220, thereby preventing it from affecting its performance.

[0084] In one possible embodiment, the sensor chip 220 is a photosensitive chip, which can refer to a chip that can convert optical signals into electrical signals. In one example, the photosensitive chip is specifically a SPAD chip. In this way, when the integrated device is used in a receiving module in a lidar, the heat dissipation performance of the photosensitive chip in the receiving module can be improved, while avoiding the problem of chip stress in the sensor chip 220 caused by the CTE of the sensor chip 220 being inconsistent with the CTE of the PCB 230.

[0085] Furthermore, as shown in Figures 9 and 10, the integrated device may also include a lens structure 240, which is disposed above the sensor chip 220 and fixed to the substrate layer 210, with the focal point of the lens structure 240 located on the photosensitive surface of the sensor chip 220. Figure 9 shows a cross-sectional view of the integrated device, and Figure 9 shows an exploded view of the integrated device. Figures 9 and 10 illustrate the integrated device using an example in which the substrate layer 210 does not include the aforementioned boss 212, and Figure 10 uses the example in which the PCB 230 and the substrate layer 210 are connected via adhesive.

[0086] The lens structure 240 may include a lens 241 and a bracket 242 . The bracket 242 may be used to fix the lens 241 . The lens structure 240 may be fixed on the substrate layer 210 via the bracket 242 .

[0087] Optionally, the lens structure 240 is fixed to the substrate layer 210, which may include: gluing the lens structure 240 to the substrate layer 210; or welding the lens structure 240 to the substrate layer 210; or riveting the lens structure 240 to the substrate layer 210. The above fixing methods are used as examples for illustration only in the present embodiment and do not constitute a limitation to the present embodiment.

[0088] In one possible embodiment, the difference between the CTE of the lens structure 240 and the CTE of the sensor chip 220 is less than a second preset threshold. The difference being less than the second preset threshold may include: the difference between the CTE of the lens structure 240 and the CTE of the sensor chip 220 is less than the second preset threshold, or the difference between the CTE of the sensor chip 220 and the CTE of the lens structure 240 is less than the second preset threshold. In other words, the difference between the CTE of the lens structure 240 and the CTE of the sensor chip 220 is small. Optionally, the second preset threshold satisfies the following conditions: greater than or equal to 0 ppm / °C and less than or equal to 10 ppm / °C.

[0089] In the embodiment of the present application, by setting the difference between the CTE of the lens structure 240 and the CTE of the sensor chip 220 to be less than a second preset threshold, the CTE of the lens structure 240 can be compensated for the CTE of the sensor chip 220. In this way, under the same temperature difference, the deformation of the lens structure 240 is basically consistent with the deformation of the sensor chip 220, thereby ensuring that the focus of the lens structure 240 is always located on the photosensitive surface of the sensor chip 220, avoiding the problem of reduced MTF of the sensor chip 220 at high and low temperatures due to the inconsistency between the deformation of the lens structure 240 and the deformation of the sensor chip 220.

[0090] Based on this, an embodiment of the present application further provides a detection device, comprising: a control circuit and a receiving module, wherein the receiving module comprises any of the integrated devices provided above; wherein the control circuit is configured to send a first control signal to the receiving module, and the receiving module is configured to receive an echo signal returned after a detection laser scans a target object according to the first control signal, and convert the echo signal into an electrical signal, and the control circuit is further configured to process the electrical signal to obtain point cloud data. Optionally, the detection device further comprises a transmitting module, and the control circuit is further configured to send a second control signal to the transmitting module, and the transmitting module is configured to transmit the detection laser according to the second control signal.

[0091] In one possible embodiment, the detection device further includes a scanning module, which can be used to change the receiving angle of the receiving module receiving the echo signal under the control of the control circuit. Optionally, the scanning module can be used to change the scanning angle of the detection laser emitted by the transmitting module under the control of the control circuit.

[0092] Optionally, the detection device may be a laser radar or other device capable of emitting a detection laser. Examples of detection devices include, but are not limited to, vehicle-mounted laser radars, household robot vacuum laser sensors, dock laser detection modules, laser printers, and the like.

[0093] The present application also provides a terminal including the detection device described above. Optionally, the terminal includes, but is not limited to: smart home devices (such as televisions, robot vacuums, smart desk lamps, audio systems, smart lighting systems, appliance control systems, home background music, home theater systems, intercom systems, video surveillance, etc.), smart transportation equipment (such as cars, ships, drones, trains, vans, trucks and other vehicles), smart manufacturing equipment (such as robots, industrial equipment, smart logistics, smart factories, etc.), smart terminals (mobile phones, computers, tablets, PDAs, desktops, headphones, audio equipment, wearable devices, vehicle-mounted devices, virtual reality devices, augmented reality devices, etc.).

[0094] Figure 11 is a flow chart of a method for manufacturing an integrated device provided in an embodiment of the present application. The integrated device may be the integrated device provided above. The method includes the following steps. Figures 12 and 13 are cross-sectional views of the integrated device during the manufacturing process.

[0095] S301: forming a substrate layer, as shown in FIG12(a) or FIG13(a).

[0096] The substrate layer may include a material with good heat dissipation performance, for example, a metal material and / or a ceramic material. The metal material may be a single metal, a metal compound, an alloy, or a combination of the above materials.

[0097] In one possible embodiment, the substrate layer includes at least one of the following materials: aluminum-based silicon carbide AlSiC, aluminum Al, copper Cu, and tungsten W. In one example, the substrate layer includes aluminum-based silicon carbide AlSiC. In another example, the substrate layer includes aluminum Al, copper Cu, or tungsten W. In yet another example, the substrate layer includes aluminum-based silicon carbide AlSiC and aluminum Al, or aluminum-based silicon carbide AlSiC and copper Cu, or aluminum-based silicon carbide AlSiC and tungsten W.

[0098] Optionally, the substrate layer includes a base layer and a boss. In one possible embodiment, the base layer and the boss are integrally formed, that is, the base layer and the boss can be two parts of the same substrate layer formed in one process. Alternatively, the base layer and the boss are not integrally formed, but are two independently set parts. For example, the base layer and the boss can be formed through two independent processes. When the base layer and the boss are two independently set parts, the boss can be bonded to the base layer by adhesive, or riveted to the base layer by rivets or the like. FIG12 takes the case where the base layer does not include the boss, and FIG13 takes the case where the base layer includes the boss as an example for explanation.

[0099] Optionally, the base layer and the boss are made of different materials. In one possible example, the base layer and the boss are made of the same material, for example, both are aluminum-based silicon carbide (AlSiC), aluminum (Al), copper (Cu), or tungsten (W). In another possible example, the base layer and the boss are made of different materials, for example, the base layer is made of aluminum (Al), copper (Cu), or tungsten (W), and the boss is made of aluminum-based silicon carbide (AlSiC).

[0100] When the substrate layer comprises aluminum-based silicon carbide (AlSiC), the CTE of the substrate layer can be adjusted by adjusting the Al content in the AlSiC. When the substrate layer comprises at least two materials, the CTE of the substrate layer can be adjusted by adjusting the contents of the at least two materials.

[0101] S302: placing a sensor chip on the substrate layer, as shown in FIG12(b) or FIG13(b).

[0102] The sensor chip may refer to a chip with an integrated sensor. In one possible embodiment, the sensor chip may be a bare die, which may also be referred to as a die or a bare crystal. The die or bare crystal may refer to a small piece cut from a wafer. A wafer, also referred to as a die, refers to a silicon wafer used to manufacture silicon semiconductor circuits, and its raw material may be silicon.

[0103] Optionally, the difference between the CTE of the substrate layer and the CTE of the sensor chip is less than a first preset threshold, that is, the difference obtained by subtracting the CTE of the sensor chip from the CTE of the substrate layer is less than the first preset threshold, or the difference obtained by subtracting the CTE of the substrate layer from the CTE of the sensor chip is less than the first preset threshold. Optionally, the first preset threshold satisfies: greater than or equal to 0 ppm / °C and less than or equal to 10 ppm / °C. In one example, the CTE of the sensor chip can be approximately 2 ppm / °C, and the CTE of the substrate layer 210 can be greater than or equal to 3 ppm / °C and less than or equal to 12 ppm / °C.

[0104] Specifically, the sensor chip can be disposed on the substrate layer in any of the following ways. First, the sensor chip is bonded to the substrate layer using an adhesive, such as glass glue, a single-component adhesive, or a multi-component adhesive. Second, the sensor chip is welded to the substrate layer, such as by having solder balls disposed on the sensor chip and then being welded to the substrate layer via the solder balls. Third, the sensor chip is riveted to the substrate layer, such as by using rivets to secure the sensor chip to the substrate layer.

[0105] S303: PCB is arranged on the substrate layer, and the sensor chip is connected to the PCB via a transmission line TL, wherein the sensor chip is located in an opening of the PCB, as shown in FIG12(c) or FIG13(c).

[0106] Specifically, arranging the PCB on the substrate layer may include: adhering the PCB to the substrate layer by adhesive; or, soldering the PCB to the substrate layer by solder balls of the PCB; or, riveting the PCB to the substrate layer by rivets.

[0107] Among them, the transmission line TL used to connect the sensor chip and the PCB can be a metal wire. For example, the metal can be gold (Au), that is, the transmission line TL is a gold wire. By using a gold wire to connect the sensor chip and the PCB, the attenuation of the transmission signal by the transmission line TL can be reduced.

[0108] Optionally, a height difference exists between the sensor chip and the PCB. For example, as shown in FIG12(c), the height of the sensor chip is less than the height of the PCB; or, as shown in FIG13(c), the height of the sensor chip is greater than the height of the PCB. This height difference facilitates the formation of a transmission line TL between the sensor chip and the PCB.

[0109] In one possible embodiment, the integrated device further includes a protective adhesive. The method may further include: S3031. Applying the protective adhesive to the transmission line TL, as shown in FIG12(d) or FIG13(d). Specifically, applying the protective adhesive to the transmission line TL can prevent peripheral devices of the transmission line TL from interfering with the transmission signal within the transmission line TL. Optionally, the protective adhesive may be glass adhesive.

[0110] In another possible embodiment, the integrated device further includes a protective glass, and the method may further include: S3032. Arranging the protective glass above the sensor chip. As shown in FIG12(d) or FIG13(d). In one example, the protective glass may be fixed above the sensor chip using the aforementioned glass glue. By arranging the protective glass above the sensor chip, dust or debris may be prevented from falling onto the sensor chip, thereby avoiding affecting the performance of the sensor chip.

[0111] In an embodiment of the present application, the sensor chip and the PCB are disposed on the substrate layer, the sensor chip is located within an opening in the PCB, and the sensor chip is connected to the PCB via a transmission line TL. Furthermore, the difference between the CTE of the substrate layer and the CTE of the sensor chip is less than a first preset threshold value. This allows the sensor chip to rapidly dissipate heat through the substrate layer, and ensures that the deformation of the substrate layer is substantially consistent with that of the sensor chip under the same temperature difference, thereby resolving the chip stress problem of the sensor chip.

[0112] Furthermore, the integrated device further includes a lens structure; accordingly, as shown in FIG11 , the method may further include: S304.

[0113] S304: The lens structure cover is placed above the sensor chip and fixed on the substrate layer, with the focus of the lens structure located on the photosensitive surface of the sensor chip, as shown in FIG12(e) or FIG13(e).

[0114] The lens structure may include a lens and a bracket, wherein the bracket may be used to secure the lens, and the lens structure may be secured to the substrate layer via the bracket. Optionally, securing the lens structure to the substrate layer may include: gluing the lens structure to the substrate layer; welding the lens structure to the substrate layer; or riveting the lens structure to the substrate layer. The examples shown in Figures 12(e) and 13(e) are exemplified by the lens structure being riveted to the substrate layer.

[0115] In one possible embodiment, the difference between the CTE of the lens structure and the CTE of the sensor chip is less than a second preset threshold. The difference being less than the second preset threshold may include: the difference obtained by subtracting the CTE of the sensor chip from the CTE of the lens structure is less than the second preset threshold, or the difference obtained by subtracting the CTE of the lens structure from the CTE of the sensor chip is less than the second preset threshold. In other words, the difference between the CTE of the lens structure and the CTE of the sensor chip is small. Optionally, the second preset threshold satisfies: greater than or equal to 0ppm / °C, and less than or equal to 10ppm / °C.

[0116] In the embodiment of the present application, by setting the difference between the CTE of the lens structure and the CTE of the sensor chip to be less than a second preset threshold value, the deformation of the lens structure and the deformation of the sensor chip can be basically consistent under the same temperature difference, thereby ensuring that the focus of the lens structure is always located on the photosensitive surface of the sensor chip, avoiding the problem of reduced MTF of the sensor chip at high and low temperatures due to the inconsistency between the deformation of the lens structure and the deformation of the sensor chip.

[0117] According to the manufacturing method provided in the embodiment of the present application, the embodiment of the present application also provides a computer-readable storage medium, which stores a computer program. When the computer program is run, the manufacturing method introduced in the above content is executed.

[0118] According to the manufacturing method provided in the embodiment of the present application, the embodiment of the present application also provides a computer program product, which implements the manufacturing method introduced in the above content when the computer program product runs on a processor.

[0119] Finally, it should be noted that the above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An integrated device, characterized in that: The integrated device comprises: a substrate layer, a sensor chip and a printed circuit board PCB; The sensor chip is arranged on the substrate layer; The PCB is arranged on the substrate layer, the PCB is provided with an opening, the sensor chip is located in the opening, and the sensor chip is connected to the PCB via a transmission line; Wherein, a difference between a coefficient of thermal expansion (CTE) of the substrate layer and a CTE of the sensor chip is smaller than a first preset threshold.

2. The integrated device according to claim 1, characterized in that The substrate layer includes a base layer and a boss, and the sensor chip is arranged on the boss.

3. The integrated device according to claim 2, characterized in that The base layer and the boss are integrally formed; or, the material of the base layer is different from that of the boss.

4. The integrated device according to any one of claims 1 to 3, characterized in that: The sensor chip is bonded to the substrate layer by adhesive; or the sensor chip is welded or riveted to the substrate layer.

5. The integrated device according to any one of claims 1 to 4, characterized in that: The first preset threshold satisfies: greater than or equal to 0 ppm / °C and less than or equal to 10 ppm / °C.

6. The integrated device according to any one of claims 1 to 5, characterized in that: The substrate layer includes at least one of the following materials: aluminum-based silicon carbide AlSiC, aluminum Al, copper Cu, and tungsten W.

7. The integrated device according to any one of claims 1 to 6, characterized in that: There is a height difference between the sensor chip and the PCB.

8. The integrated device according to any one of claims 1 to 7, characterized in that: The integrated device further comprises: The lens structure is covered above the sensor chip and fixed on the substrate layer, and the focus of the lens structure is located on the photosensitive surface of the sensor chip.

9. The integrated device according to claim 8, characterized in that A difference between a CTE of the lens structure and a CTE of the sensor chip is smaller than a second preset threshold.

10. The integrated device according to any one of claims 1 to 9, characterized in that: The integrated device further comprises: a protective glue for protecting the transmission line.

11. The integrated device according to any one of claims 1 to 10, characterized in that: The integrated device further includes a protective glass located above the sensor chip.

12. The integrated device according to any one of claims 1 to 11, characterized in that: The PCB is bonded to the substrate layer by adhesive; or the PCB is welded or riveted to the substrate layer.

13. The integrated device according to any one of claims 1 to 12, characterized in that: The sensor chip is a bare chip.

14. The integrated device according to claim 13, characterized in that The sensor chip is a photosensitive chip.

15. A detection device, characterized in that: The detection device comprises: a control circuit and an integrated device according to any one of claims 1 to 14, wherein the control circuit is configured to receive a signal output by the integrated device.

16. A terminal, characterized in that: The terminal includes: the detection device according to claim 15. The terminal according to claim 16 , wherein: The terminal is a vehicle.

18. A method for manufacturing an integrated device, characterized in that: The integrated device includes a substrate layer, a sensor chip, and a printed circuit board (PCB) having an opening, and the method includes: forming the substrate layer; Arranging the sensor chip on the substrate layer; The PCB is arranged on the substrate layer, and the sensor chip is connected to the PCB via a transmission line, wherein the sensor chip is located in the opening of the PCB; Wherein, a difference between a coefficient of thermal expansion (CTE) of the substrate layer and a CTE of the sensor chip is smaller than a first preset threshold.

19. The method according to claim 18, characterized in that The substrate layer includes a base layer and a boss, and the sensor chip is arranged on the boss.

20. The method according to claim 19, characterized in that The base layer and the boss are integrally formed; or, the material of the base layer is different from that of the boss.

21. The method according to any one of claims 18 to 20, characterized in that The sensor chip is provided on the substrate layer, comprising: The sensor chip is bonded to the substrate layer by adhesive; or the sensor chip is bonded to the substrate layer by welding or riveting.

22. The method according to any one of claims 18 to 21, characterized in that The first preset threshold satisfies: greater than or equal to 0 ppm / °C and less than or equal to 10 ppm / °C.

23. The method according to any one of claims 18 to 22, characterized in that The substrate layer includes at least one of the following materials: aluminum-based silicon carbide AlSiC, aluminum Al, copper Cu, and tungsten W.

24. The method according to any one of claims 18 to 23, characterized in that There is a height difference between the sensor chip and the PCB.

25. The method according to any one of claims 18 to 24, characterized in that The integrated device further includes a lens structure, and the method further includes: The lens structure cover is arranged above the sensor chip and fixed on the substrate layer, and the focus of the lens structure is located on the photosensitive surface of the sensor chip.

26. The method according to claim 25, characterized in that A difference between a CTE of the lens structure and a CTE of the sensor chip is smaller than a second preset threshold.

27. The method according to any one of claims 18 to 26, characterized in that The integrated device further includes a protective glue, and the method further includes: arranging the protective glue on the transmission line.

28. The method according to any one of claims 18 to 27, characterized in that The integrated device further includes a protective glass, and the method further includes: arranging the protective glass above the sensor chip.

29. The method according to any one of claims 18 to 28, characterized in that The step of arranging the PCB on the substrate layer includes: adhering the PCB to the substrate layer by adhesive; or welding or riveting the PCB to the substrate layer.

30. The method according to any one of claims 18 to 29, characterized in that The sensor chip is a bare chip.

31. The method according to claim 30, wherein The sensor chip is a photosensitive chip.

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