Information processing system and information processing method

Abstract

According to one embodiment of the present invention, an information processing system is provided. The information processing system includes a thermoelectric conversion unit and a signal processing unit. The thermoelectric conversion unit is configured so as to generate a temperature gradient by heat exchange with the device, and to generate a thermoelectromotive force on the basis of the temperature gradient. The signal processing unit includes an acquisition unit and a detection unit. The acquisition unit is configured to acquire a thermoelectromotive force. The detection unit is configured so as to detect an abnormal operation accompanying heat generation of the device on the basis of the thermoelectromotive force.

Description

Technical Field

[0001] The invention relates to an information processing system and an information processing method. Background Art

[0002] Patent Document 1 discloses a technique for estimating a temperature corresponding to the internal resistance of an electric storage element.

[0003] The power storage system described in Patent Document 1 includes: a power storage element that performs charging and discharging; a temperature sensor that is used to obtain the external temperature of the power storage element; and a controller that uses the external temperature of the power storage element and a formula that represents heat transfer to calculate the temperature of a reference point that represents the temperature corresponding to the internal resistance of the power storage element.

[0004] When the controller restarts the charging and discharging of the storage element, it determines whether the internal temperature deviation of the storage element is eliminated.

[0005] The controller uses the surface temperature of the surface of the storage element as the temperature of the reference point when the temperature deviation is eliminated, and calculates the temperature of the reference point when the temperature deviation is not eliminated.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2013-118056 Summary of the invention

[0009] Problems to be solved by the invention

[0010] However, when using a temperature sensor to detect abnormality or control a device, etc., the temperature change of the temperature sensor itself is necessary.

[0011] However, since the temperature sensor itself also has heat capacity, the temperature change of the temperature sensor based on this heat capacity tends to be slower than the temperature change of the device.

[0012] Means for solving problems

[0013] According to one aspect of the present invention, an information processing system is provided.

[0014] The information processing system includes a thermoelectric conversion unit and a signal processing unit.

[0015] The thermoelectric conversion unit is configured to generate a temperature gradient by exchanging heat with a device and to generate a thermoelectromotive force based on the temperature gradient.

[0016] The signal processing unit includes an acquisition unit and a detection unit.

[0017] The acquisition unit is configured to acquire thermoelectromotive force.

[0018] The detection unit is configured to detect abnormal operation of the device accompanied by heat generation based on thermoelectromotive force.

[0019] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and thus abnormality detection or control of the device can be performed with higher sensitivity than before.

[0020] Brief description of the attached figure

[0021] Figure 1 It is a diagram showing an overview of the information processing system 1 .

[0022] Figure 2 It is a diagram showing a configuration example of the signal processing circuit 35 .

[0023] Figure 3 It is a perspective view showing an example of the structure of the power storage unit BU.

[0024] Figure 4 Looking down from the first direction D1 Figure 3 A plan view of one of the power storage units BU shown.

[0025] Figure 5 Looking down at D3 from a third party Figure 3 A side view of one of the power storage units BU is shown.

[0026] Figure 6 It is a block diagram showing the hardware configuration of the information processing device 4 .

[0027] Figure 7 It is a diagram showing an example of the functional units included in the processor 43 .

[0028] Figure 8 This is an activity diagram showing an example of the flow of the first information processing executed in the information processing system 1 .

[0029] Fig. 9 This is an activity diagram showing an example of the flow of the second information processing executed in the information processing system 1 .

[0030] Fig.10 This is an activity diagram showing an example of the flow of the third information processing executed in the information processing system 1 .

[0031] Fig.11 It is a cross-sectional view of the power storage device 2 and the thermoelectric conversion unit 31 in contact with the power storage device 2 , taken along a plane perpendicular to the third direction D3 .

[0032] Fig.121 is a diagram showing an example of a thermal circuit model M.

[0033] Fig.13 It is a cross-sectional view of the power storage device 2 and the like, taken on a plane perpendicular to the third direction D3 , when the thermoelectric conversion unit 31 is in contact with the power storage device 2 via the temperature adjustment element 6 .

[0034] Fig.14 It is a diagram showing another example of the signal processing circuit 35 .

[0035] Fig.15 This is a diagram showing an example of the signal processing system 3 that does not include the first heat transfer unit 33 .

[0036] Fig.16 It is a diagram showing an example of a mounting method of the thermoelectric conversion unit 31 .

[0037] Explanation of symbols

[0038] 1: Information processing system;

[0039] 2: Power storage device;

[0040] 3: Signal processing system;

[0041] 4: Information processing device;

[0042] 6: Temperature adjustment element;

[0043] 21: frame;

[0044] 22: power storage unit;

[0045] 31: Thermoelectric conversion unit;

[0046] 32: hot bath;

[0047] 33: first heat conducting portion;

[0048] 34: second heat conducting portion;

[0049] 35: signal processing circuit;

[0050] 36: switch;

[0051] 40: Communication bus;

[0052] 41: Ministry of Communications;

[0053] 42: storage unit;

[0054] 43: Processor;

[0055] 44: display unit;

[0056] 45: input unit;

[0057] 311: First area;

[0058] 312: Second area;

[0059] 331: Main face;

[0060] 332: protrusion;

[0061] 341: Contact Department;

[0062] 342: heat transport unit;

[0063] 351: Comparative Department;

[0064] 352: AC / DC converter;

[0065] 353: Capacitor;

[0066] 431: Acquisition Department;

[0067] 432: Detection Department;

[0068] 433: Judgment Department;

[0069] 434: Change Department;

[0070] 435: Presumption Department;

[0071] 436: Equipment control department;

[0072] 437: display processing unit;

[0073] BS: battery storage system;

[0074] BU: battery unit;

[0075] C1: heat capacity;

[0076] D1: first direction;

[0077] D2: second direction;

[0078] D3: third direction;

[0079] E: thermal electromotive force;

[0080] J: temperature gradient;

[0081] M: thermal loop model;

[0082] M1: driving device;

[0083] P: request power;

[0084] Pmax: maximum output power;

[0085] Q: heat source;

[0086] R1: thermal resistor;

[0087] Tb: reference temperature;

[0088] Td: detection temperature;

[0089] Vt1: threshold voltage;

[0090] ΔT: temperature difference. DETAILED DESCRIPTION

[0091] Hereinafter, embodiments of the present invention will be described using drawings.

[0092] Various features disclosed in the embodiments shown below can be combined with each other.

[0093] However, the program for implementing the software described in this embodiment may be provided as a computer-readable non-transitory recording medium (Non-Transitory Computer-Readable Medium), may be provided in a form that can be downloaded from an external server, or may be provided in a form that the program is started by an external computer and its functions are implemented on a client terminal (so-called cloud computing).

[0094] In the present embodiment, the term "unit" may include, for example, a combination of hardware resources implemented by a generalized circuit and information processing by software that can be specifically realized by the hardware resources.

[0095] In addition, in this embodiment, various information is processed, but such information is represented by, for example, a physical value representing a signal value of voltage / current, the high or low signal value of a binary bit set composed of 0 or 1, or quantum superposition (so-called quantum bit), and communication / operation can be performed on a generalized circuit.

[0096] In addition, the so-called circuit in a broad sense refers to a circuit realized by appropriately combining at least circuit, circuit type, processor, and memory.

[0097] That is, it includes Application Specific Integrated Circuit (ASIC), programmable logic devices (for example, Simple Programmable Logic Device (SPLD), Complex Programmable Logic Device (CPLD), and Field Programmable Gate Array (FPGA)), etc.

[0098] 1. Overview of Information Processing System 1

[0099] In this section, the overview of the information processing system 1 is described.

[0100] Figure 1 It is a diagram showing an overview of the information processing system 1 .

[0101] like Figure 1 and Figure 2 As shown, the information processing system 1 includes a drive device M1 and a power storage system BS.

[0102] The drive device M1 is configured to be driven by the electric power output from the power storage system BS, and examples thereof include a motor, a lighting device, and a computer.

[0103] The driving device M1 transmits requested power P required for its own operation to the outside.

[0104] The power storage system BS is connected to the drive device M1 via a power converter (not shown), and can output electric power corresponding to the requested electric power P by controlling the power converter.

[0105] The power storage system BS includes at least one (three or more in the present embodiment) power storage unit BU.

[0106] <Power Storage Unit BU>

[0107] The power storage unit BU is configured to supply electric power to the drive device M1 in accordance with the requested electric power P transmitted from the drive device M1 .

[0108] The power storage units BU are connected in series with each other, and include, for example, a power storage device 2 and a signal processing system 3 as equipment.

[0109] Furthermore, the power storage units BU may be connected in any manner, and may be connected in parallel.

[0110] <Electrical Storage Device 2>

[0111] The power storage device 2 is configured to realize charging and discharging of electric power to the drive device M1 , and includes, for example, a housing 21 and a power storage unit 22 accommodated in the housing 21 .

[0112] The frame body 21 is configured to conduct heat generated from the power storage unit 22 to at least a portion of the surface, and is formed using a thermally conductive material such as metal.

[0113] The specific aspects of the frame body 21 will be described later.

[0114] The power storage unit 22 is configured to generate an electromotive force V, and examples thereof include a lead acid battery, a nickel-cadmium battery, a lithium ion battery, and an air battery.

[0115] In particular, lithium-ion batteries include: iron phosphate series, iron titanate series, ternary series, manganese series, nickel series, cobalt series, NCA (nickel / cobalt / aluminum) series, lithium polymer series, etc. It can be any one of them, or a combination of multiple elements thereof, without special restrictions.

[0116] The power storage device 2 is configured to generate heat according to the operating state of the power storage device 2 .

[0117] For example, the power storage device 2 generates heat so that the amount of heat generated increases as the amount of discharge or charge per unit time increases.

[0118] <Signal Processing System 3>

[0119] The signal processing system 3 is configured to process a signal including information on the state of the power storage device 2 .

[0120] The signal processing system 3 includes a thermoelectric conversion unit 31 , a heat bath 32 , a first heat transfer unit 33 , a second heat transfer unit 34 , a signal processing circuit 35 , and a switch 36 , and at least a part of the signal processing system 3 functions as a signal processing unit.

[0121] <Thermoelectric conversion unit 31>

[0122] The thermoelectric conversion unit 31 is configured to generate a temperature gradient J by heat exchange with the power storage device 2 and to generate a thermoelectromotive force E based on the temperature gradient J.

[0123] Specifically, the thermoelectric conversion section 31 is configured to generate a thermoelectromotive force E in accordance with a temperature gradient J generated in the thermoelectric conversion section 31 due to heat exchange with the power storage device 2 .

[0124] Thus, in the present embodiment, the thermoelectric conversion unit 31 can function as a heat flow sensor capable of detecting a heat flow caused by heat exchange with the power storage device 2 .

[0125] The thermoelectric conversion section 31 will be described in detail later.

[0126] <Hot Bath 32>

[0127] The heat bath 32 is maintained at a predetermined reference temperature Tb.

[0128] The reference temperature Tb is a temperature serving as a reference for the temperature gradient J generated in the thermoelectric conversion unit 31 .

[0129] The specific structure of the heat bath 32 is arbitrary, and examples thereof include: a frame that stores the storage unit BU or the frame of the drive device M1, etc., which maintains its temperature approximately at the outside air temperature through heat exchange with the outside air, or a component such as a metal bath or a salt bath that has a sufficiently large heat capacity compared to the frame 21, etc.

[0130] <First Heat Transfer Section 33>

[0131] The first heat transfer unit 33 connects the power storage device 2 (the frame body 21 in the present embodiment) and the thermoelectric conversion unit 31 , and is formed of a heat conductive material such as metal.

[0132] The frame 21 and the thermoelectric conversion unit 31 exchange heat via the first heat transfer unit 33 .

[0133] Thereby, a temperature gradient J is generated in the thermoelectric conversion portion 31 along a direction from the first heat conduction portion 33 toward the thermoelectric conversion portion 31 .

[0134] According to such a configuration, heat exchange between the power storage device 2 and the thermoelectric conversion unit 31 is performed via the first heat transfer unit 33 , so that variations in the thermoelectromotive force E due to differences in heat generation positions of the power storage device 2 can be easily reduced.

[0135] <Second Heat Transfer Section 34>

[0136] The second heat transfer unit 34 is connected to the heat bath 32 so as to maintain the temperature of the second region 312 substantially at the reference temperature Tb.

[0137] According to such a structure, it is easy to grasp the temperature gradient J of the thermoelectric conversion section 31 more accurately.

[0138] The second heat transfer portion 34 , like the first heat transfer portion 33 , is formed of a heat conductive material such as metal.

[0139] The thermoelectric conversion unit 31 and the heat bath 32 exchange heat via the second heat transfer unit 34 .

[0140] In the present embodiment, the heat exchange between the frame 21 and the thermoelectric conversion section 31 and the heat exchange between the thermoelectric conversion section 31 and the heat bath 32 are respectively performed.

[0141] According to this structure, the operating temperature of the thermoelectric conversion unit 31 is stable. Therefore, the detection accuracy of the power storage device 2 in a heating state can be improved.

[0142] The heat bath 32 is an example of a temperature adjustment unit that can adjust the temperature of the second heat conduction unit 34.

[0143] <Signal processing circuit 35>

[0144] The signal processing circuit 35 is configured to obtain the thermoelectromotive force E generated by the thermoelectric conversion unit 31 and control the power storage device 2 and the like based on the thermoelectromotive force E.

[0145] The thermoelectromotive force E is an example of the first signal caused by the thermoelectromotive force E.

[0146] Here, a structural example of the signal processing circuit 35 will be described.

[0147] Figure 2 is a diagram showing a structural example of the signal processing circuit 35.

[0148] As Figure 2 shown, the signal processing circuit 35 includes a comparison unit 351 and an AC / DC converter 352.

[0149] <Comparison unit 351>

[0150] The comparison unit 351 is configured to compare the thermoelectromotive force E of the thermoelectric conversion unit 31 with a threshold voltage Vt1 as a specified reference value.

[0151] In the present embodiment, the comparison unit 351 is composed of an operational amplifier, whose inverting input terminal is connected to a reference power supply that outputs the threshold voltage Vt1, and the non-inverting input terminal is connected to the thermoelectric conversion unit 31.

[0152] Therefore, when the thermoelectromotive force E output from the thermoelectric conversion unit 31 exceeds the threshold voltage Vt1, the comparison unit 351 outputs an analog voltage signal corresponding to the difference between the thermoelectromotive force E and the threshold voltage Vt1.

[0153] <AC / DC converter 352>

[0154] The AC / DC converter 352 is connected to the output terminal of the comparison unit 351.

[0155] The AC / DC converter 352 is configured to convert the analog voltage signal output from the comparison unit 351 into a digital signal.

[0156] This digital signal is output to the information processing device 4, for example.

[0157] <Switch 36>

[0158] The switch 36 is configured to allow the charging and discharging of the power storage device 2 by being turned on, and to restrict, more specifically, stop, the charging and discharging of the power storage device 2 by being turned off.

[0159] The specific form of the switch 36 is arbitrary.

[0160] For example, when the switch 36 is a single-pole single-throw type, the charge and discharge of all the power storage devices 2 are restricted by turning the switch 36 into an open state.

[0161] When switch 36 is a single-pole double-throw type, switch 36 is turned off to connect to a redundant circuit that bypasses power storage device 2 corresponding to switch 36 , thereby limiting the charging and discharging of the corresponding power storage device 2 alone.

[0162] <Information Processing Device 4>

[0163] In the present embodiment, one of the signal processing systems 3 further includes an information processing device 4 .

[0164] The information processing device 4 is configured to comprehensively control each of the signal processing systems 3 , and functions as, for example, a battery management system (BMS).

[0165] Furthermore, the information processing device 4 of the present embodiment is configured to be able to control the drive device M1 as a device other than the power storage device 2 , that is, as a second device.

[0166] 2. Example of the structure of the power storage unit BU

[0167] In this section, an example of the configuration of the above-mentioned power storage unit BU is described.

[0168] Figure 3 It is a perspective view showing an example of the structure of the power storage unit BU.

[0169] Figure 4 Looking down from the first direction D1 Figure 3 A plan view of one of the power storage units BU shown. Figure 5 Looking down at D3 from a third party Figure 3 A side view of one of the power storage units BU is shown.

[0170] like Figure 3 As shown, each of the power storage units BU is formed in a flat plate shape within a plane whose normal line extends along the first direction D1 , and is laminated on top of each other in the first direction D1 to form a module.

[0171] The first direction D1 may also be referred to as a lamination direction.

[0172] Here, for convenience of explanation, illustration of various wirings extending from the power storage unit BU is omitted.

[0173] In addition, for the convenience of description, two directions perpendicular to the first direction D1 are respectively referred to as the second direction D2 and the third direction D3.

[0174] The second direction D2 and the third direction D3 are perpendicular to each other.

[0175] like Figures 3 to 5 As shown, the frame 21 of the power storage device 2 is formed in a flat rectangular parallelepiped whose normal line extends in the first direction D1 , and the thickness direction thereof is parallel to the first direction D1 .

[0176] The long sides of the frame body 21 extend along the second direction D2 , and the short sides of the frame body 21 extend along the third direction D3 .

[0177] In this embodiment, the second direction D2 may also be referred to as a long side direction, and the third direction D3 may also be referred to as a short side direction.

[0178] The power storage device 2 may generate heat due to operations such as charging and discharging, or abnormalities such as failure of the power storage unit 22 , and a heat source Q may be generated inside the housing 21 .

[0179] In the present embodiment, a case where the heat source Q is generated in the center of the power storage device 2 will be described.

[0180] The position of the heat source Q is not limited to the center, but may be any position, and may be, for example, the surface of the power storage device 2 , the inside, or the end of the power storage device.

[0181] The first heat transfer portion 33 is formed in a flat plate shape whose normal line extends in the first direction D1 , and includes a main surface portion 331 and a protruding portion 332 .

[0182] <Main surface 331>

[0183] The main surface portion 331 is formed in a rectangular flat plate shape similar to the frame body 21 , and the thickness direction thereof is parallel to the first direction D1 .

[0184] The long side direction of the main surface portion 331 extends along the second direction D2 , and the short side direction of the main surface portion 331 extends along the third direction D3 .

[0185] The main surface 331 contacts the frame 21 in the first direction D1 , whereby heat generated from the heat source Q is transferred to the surface of the frame 21 through the frame 21 and then transferred from the surface of the frame 21 to the main surface 331 .

[0186] The main surface 331 is configured such that, when one of the power storage units BU is viewed in plan from the first direction D1 , the outer edge of the main surface 331 on a plane perpendicular to the first direction D1 is included inside the outer edge of the main surface 331 on the plane perpendicular to the first direction D1 .

[0187] <Protrusion 332>

[0188] like Figure 4 As shown, the protrusion 332 is configured to protrude from the power storage device 2 when the power storage device 2 is viewed from above from a predetermined first direction D1 , and extends from a portion of the outer edge of the main surface portion 331 in the second direction D2 .

[0189] Therefore, even when a plurality of power storage units BU are stacked, the protrusion 332 is configured not to be sandwiched by the frame body 21 .

[0190] According to such a configuration, it is easier to measure the thermoelectromotive force E of the thermoelectric conversion section 31, and thus the degree of freedom in the arrangement of the power storage device 2 and the like can be improved.

[0191] The protrusion 332 has a square flat plate shape whose thickness direction extends along the first direction D1 , and is formed integrally with the main surface portion 331 so as to be flush with the main surface portion 331 .

[0192] In addition, the shape of the protrusion 332 is arbitrary and is not limited thereto.

[0193] Furthermore, the protrusions 332 included in different power storage units BU may be configured so as not to overlap each other when the power storage device 2 is viewed in plan from the first direction D1.

[0194] According to such a structure, heat convection near the protrusion 332 can be promoted by ensuring a space near the protrusion 332 in the first direction D1.

[0195] On the other hand, the protrusions 332 included in different power storage units BU may be configured so as to overlap with each other when the power storage device 2 is viewed in plan from the first direction D1.

[0196] According to such a configuration, the assembly composed of the plurality of power storage units BU can be made more compact.

[0197] <Thermoelectric conversion unit 31>

[0198] The thermoelectric conversion section 31 is configured to generate a thermoelectromotive force E including a component generated in a direction different from the temperature gradient J.

[0199] According to such a configuration, it is easy to measure the thermoelectromotive force E from a direction different from the temperature gradient J, so that wiring and the like between the power storage device 2 and the thermoelectric conversion unit 31 can be reduced.

[0200] Therefore, a decrease in sensitivity to the temperature gradient J can be suppressed.

[0201] In the present embodiment, the temperature gradient J is generated along the first direction D1 , and the thermoelectromotive force E includes a component generated in the second direction D2 perpendicular to the first direction D1 .

[0202] The thermoelectric conversion unit 31 is configured such that the thermoelectromotive force E changes in accordance with a temperature change of the surface of the power storage device 2 (eg, a region of the surface of the frame 21 in contact with the thermoelectric conversion unit 31 ) caused by heat generation.

[0203] The thermoelectric mechanism of such thermoelectromotive force E is arbitrary, and can be realized, for example, by the anomalous Nernst effect.

[0204] The thermoelectric conversion unit 31 utilizes the anomalous Nernst effect and generates a thermoelectromotive force E in a direction perpendicular to the temperature gradient J and the direction perpendicular to the magnetic structure by using a magnetic structure characterized by a direction perpendicular to the temperature gradient J.

[0205] In other words, the anomalous Nernst effect is expressed by the amount of the non-diagonal component of the thermoelectric tensor of the thermoelectric conversion unit 31 that depends on the physical variable equivalent to the magnetic field.

[0206] The thermoelectromotive force E is antisymmetric with respect to the magnetic field, symmetric with respect to the in-plane component perpendicular to the first direction D1 of the temperature gradient J, and antisymmetric with respect to the perpendicular component parallel to the first direction D1.

[0207] Regarding the compositions that can express this anomalous Nernst effect, for example, there can be listed: Mn3Sn, Mn3Ge, Mn3Ga, Co2MnGa, Fe3Al, Fe3Ga, Fe3Sn2, FeGa, L1_0 type FePt, L1_0 type FePd, L1_0 type MnGa, D0_22 type Mn2Ga, SmCo5, Nd2Ir2O7 or alloys, element substitutions or mixtures thereof, but are not limited to the substances listed here and are arbitrary.

[0208] Furthermore, the anomalous Nernst coefficient may be increased by adding an arbitrary substance such as MgO to the above compositions.

[0209] Therefore, the thermoelectric conversion unit 31 is not limited to being composed of only the above-mentioned composition.

[0210] The anomalous Nernst effect may be expressed by any mechanism, and examples thereof include a mechanism caused by an antiferromagnetic magnetic structure having a non-collinear spin structure, or a mechanism caused by a specific band structure called a Weyl point or a nodal web.

[0211] One of the reasons for expressing the anomalous Nernst effect is presumed to be as follows: in these structures, the quantity that expresses geometric characteristics (for example, Chern number) is limited due to the symmetry of the band structure and the like.

[0212] For example, it is considered that the anomalous Nernst effect is expressed by the wave function of electrons constituting the system obtaining a Berry phase corresponding to the characteristic quantity and the Berry phase functions as a virtual magnetic field acting on the electrons.

[0213] The geometrical characteristic quantity is calculated based on, for example, an energy band structure, and the energy band structure can be obtained by calculating an energy band obtained from the microscopic structure (including crystal structure and magnetic structure) of a substance.

[0214] In this case, since the Nernst coefficient tends to be larger than other expression means, higher-precision measurement, miniaturization of the element, etc., are facilitated.

[0215] In addition, the material constituting the thermoelectric conversion unit 31 may be realized as a polycrystalline material or a single crystal material.

[0216] Furthermore, the crystallographic region of the single crystal may be uniform to the extent that asymmetric properties due to the reduction in symmetry accompanying the expression of magnetic order are observed.

[0217] The thickness of the thermoelectric conversion part 31 in the first direction D1, in detail, the thickness of the structure expressing the anomalous Nernst effect contained in the thermoelectric conversion part 31 is arbitrary, specifically, for example: 5, 6, 7, 8, 9, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 200, 300, 400, 500, 600, 700, 800, 900 nm, and can also be within the range between any two of the values ​​exemplified here.

[0218] In addition, it may be outside these ranges.

[0219] In addition, the method of installing a thermoelectric material expressing the anomalous Nernst effect, etc. as the thermoelectric conversion unit 31 is arbitrary, and any of the following methods can be used: physical vapor deposition methods such as sputtering and ion plating, electroplating, chemical vapor deposition, molecular beam epitaxy (MBE), various printing methods such as inkjet printing using droplets of dissolved compounds, etc.

[0220] By utilizing this anomalous Nernst effect, the thermoelectric conversion part 31 of this embodiment is formed thinner and has a smaller volume than a thermoelectric conversion part utilizing the Seebeck effect, and can maintain its sensitivity to its heat flow (i.e., the magnitude of the thermoelectromotive force E relative to the temperature gradient J per unit area).

[0221] In the following, for convenience of explanation, a thermoelectric conversion unit utilizing the Seebeck effect may be referred to as a Seebeck element.

[0222] In addition, the thermoelectric conversion unit 31 of the present embodiment can reduce the overall heat capacity by making the volume smaller than that of the Seebeck element.

[0223] Therefore, the thermoelectric conversion unit 31 of this embodiment can respond to the temperature change of the measurement object such as the power storage device 2 in a shorter time than the Seebeck element, and can achieve higher time resolution and higher sensitivity. Depending on the situation, these characteristics that have traditionally tended to be in a trade-off relationship can be taken into account.

[0224] According to such a configuration, it is possible to detect the dynamics of instantaneous thermal changes such as the generation of abnormal heat, which cannot be detected by conventional thermometers or heat flow sensors.

[0225] The thermoelectric conversion section 31 includes a first region 311 and a second region 312 , and the first region 311 of the thermoelectric conversion section 31 is connected to the protrusion 332 .

[0226] Thus, heat from the heat source Q of the power storage device 2 is transferred from the protruding portion 332 to the thermoelectric conversion portion 31 through the first region 311 in the order of the main surface portion 331 and the protruding portion 332 through the first heat transfer portion 333 .

[0227] Heat exchange between the thermoelectric conversion unit 31 and the power storage device 2 is performed through such a heat transfer path.

[0228] The second region 312 is located in the direction of the temperature gradient J from the first region 311 (ie, the first direction D1 ).

[0229] The second region 312 can be said to be a region located on the opposite side to the first region 311 in the thickness direction of the thermoelectric conversion unit 31 , and has a front-rear relationship with the first region 311 .

[0230] <Second Heat Transfer Section 34>

[0231] The second heat transfer portion 34 includes a contact portion 341 and a heat transport portion 342 . The contact portion 341 of the second heat transfer portion 34 is connected to the second region 312 .

[0232] The contact portion 341 is arranged so as to cover the second region 312 of the thermoelectric conversion section 31 when the power storage device 2 is viewed in plan from the first direction D1.

[0233] This can suppress the temperature of the second region 312 of the thermoelectric conversion section 31 from varying according to position.

[0234] The contact portion 341 of the present embodiment is similar to the thermoelectric conversion portion 31 and is configured in a rectangular flat plate shape whose thickness direction extends along the first direction D1.

[0235] Heat transport portion 342 is connected to the outer edge of contact portion 341 , extends from the outer edge in second direction D2 , and is connected to heat bath 32 (not shown).

[0236] The heat bath 32 exchanges heat with the second region 312 of the thermoelectric conversion unit 31 via the heat transport unit 342 and the contact unit 341 in sequence.

[0237] Thereby, the surface temperature of the second region 312 of the thermoelectric conversion unit 31 is easily maintained at the reference temperature Tb of the heat bath 32 .

[0238] On the other hand, the surface temperature of the first region 311 of the thermoelectric conversion unit 31 increases due to the heat generated from the heat source Q in the housing 21 .

[0239] As a result, in the thermoelectric conversion unit 31 , a temperature gradient J is generated along the first direction D1 due to the difference between the surface temperature of the first region 311 and the surface temperature of the second region 312 .

[0240] As described above, since the surface temperature of the second region 312 is easily maintained at the reference temperature Tb, the temperature gradient J generated in the thermoelectric conversion section 31 according to the temperature of the second heat transfer section 34 can be grasped, and thus information obtained from the thermoelectromotive force E can be increased.

[0241] Therefore, a wider variety of heat-related processes can be performed.

[0242] In the present embodiment, a surface of the contact portion 341 located on the opposite side of the surface in contact with the second region 312 in the first direction D1 is exposed to the air.

[0243] Therefore, if the temperature of the thermoelectric conversion section 31 is too high, the heat accumulated in the thermoelectric conversion section 31 is released into the air via the contact section 341 .

[0244] Therefore, the second heat transfer portion 34 (particularly the contact portion 341 ) functions as a heat dissipation portion that can dissipate at least a portion of the heat that flows into the thermoelectric conversion portion 31 through heat exchange.

[0245] In other words, the second heat transfer portion 34 includes such a heat dissipation portion.

[0246] According to such a configuration, the heat generated by the heat generation of the power storage device 2 can be released from the heat dissipation unit, and therefore, an excessive temperature rise of the thermoelectric conversion unit 31 can be suppressed.

[0247] 3. Hardware Structure of Information Processing Device 4

[0248] In this section, an example of the hardware configuration of the above-mentioned information processing device 4 is described.

[0249] Figure 6 It is a block diagram showing the hardware configuration of the information processing device 4 .

[0250] The information processing device 4 includes a communication bus 40 , a communication unit 41 , a storage unit 42 , a processor 43 as a control unit, a display unit 44 , and an input unit 45 .

[0251] These components are electrically connected via a communication bus 40 inside the information processing device 4 .

[0252] <Communication Department 41>

[0253] The communication unit 41 preferably includes a wired communication unit such as USB, IEEE1394, Thunderbolt (registered trademark), wired LAN communication, etc., and may also include wireless LAN communication, mobile communication such as 3G / LTE / 5G, BLUETOOTH (registered trademark) communication, etc. as needed.

[0254] That is, it is more preferable to implement it as a collection of these multiple types of communication units.

[0255] That is, the information processing device 4 can also communicate various information with the outside via the communication unit 41 and the network.

[0256] <Storage Unit 42>

[0257] The storage unit 42 stores various information defined according to the above description.

[0258] The storage unit 42 can be implemented as a storage device such as a solid state drive (SSD) for storing various programs related to the information processing device 4 executed by the processor 43, or as a memory such as a random access memory (RAM) for storing temporary necessary information (parameters, arrays, etc.) related to the operation of the program.

[0259] The storage unit 42 stores various programs, variables, and the like related to the information processing device 4 that are executed by the processor 43 .

[0260] <Processor 43>

[0261] The processor 43 performs processing / control of the overall operation related to the information processing device 4 .

[0262] The processor 43 is, for example, a central processing unit (CPU) not shown.

[0263] The processor 43 realizes various functions related to the information processing device 4 by reading a predetermined program stored in the storage unit 42 .

[0264] That is, the information processing performed by the software stored in the storage unit 42 can be specifically realized by the processor 43 as an example of hardware, and can be executed as each functional unit included in the processor 43.

[0265] This situation will be further described in the next section.

[0266] Furthermore, the processor 43 is not limited to a single type, and may be implemented in a form having a plurality of types of processors 43 for each function.

[0267] Furthermore, a combination of these is also possible.

[0268] <Display Unit 44>

[0269] The display unit 44 may be included in the housing of the information processing device 4 or may be externally mounted.

[0270] The display unit 44 displays a screen of a graphical user interface (GUI) operable by a user.

[0271] The display unit 44 is preferably implemented using a display device such as a CRT display, a liquid crystal display, an organic EL display, or a plasma display, depending on the type of the information processing apparatus 4 .

[0272] <Input Unit 45>

[0273] The input unit 45 may be included in the housing of the information processing device 4 or may be external.

[0274] For example, the input unit 45 may be integrated with the display unit 44 and implemented as a touch panel.

[0275] If it is a touch panel, the user can input a click operation, a slide operation, and the like.

[0276] Of course, a switch button, a mouse, a QWERTY keyboard, etc. may also be used to replace the touch panel.

[0277] That is, the input unit 45 receives operation input by the user.

[0278] This input can be transmitted as a command signal to the processor 43 via the communication bus 40, so that the processor 43 can execute predetermined control and calculation as required.

[0279] 4. Functional Structure of Information Processing Device 4

[0280] In this section, an example of the functional structure of the above-mentioned processor 43 is shown.

[0281] Figure 7 It is a diagram showing an example of the functional units included in the processor 43 .

[0282] The processor 43 includes an acquisition unit 431 , a detection unit 432 , a determination unit 433 , a change unit 434 , an estimation unit 435 , a device control unit 436 , and a display processing unit 437 .

[0283] The acquisition unit 431 is configured to acquire information from the power storage device 2 or other equipment to execute an acquisition step.

[0284] The acquisition unit 431 is configured to acquire various information by reading various information stored in a storage area that is at least a part of the storage unit 42 and writing the read information in a working area that is at least a part of the storage unit 42 .

[0285] The storage area refers to, for example, an area implemented as a storage device such as an SSD in the storage unit 42 .

[0286] The working area refers to an area implemented as a memory such as a RAM, for example.

[0287] The detection unit 432 is configured to detect abnormality of equipment such as the power storage device 2 based on the acquired various information and the like, and to execute a detection step.

[0288] The determination unit 433 is configured to determine the operating state of equipment such as the power storage device 2 based on the acquired various information and the like, and to execute a determination step.

[0289] The changing unit 434 is configured to change the operation of equipment such as the power storage device 2 based on the acquired various information and the like, thereby executing a changing procedure.

[0290] The estimating unit 435 is configured to estimate various information such as the state of equipment such as the power storage device 2 or the position of the heat source Q generated by the operation of the equipment based on the acquired various information, thereby executing the first estimating step and the second estimating step.

[0291] The device control unit 436 is configured to control the operations of the power storage device 2 , the drive device M1 , and the like as devices based on various information.

[0292] The display processing unit 437 is configured to display various information.

[0293] This information may be presented to the user via the display unit 44 or other devices.

[0294] In this case, for example, the display processing unit 437 performs control so that visual information such as a screen, an image including a still image or a moving image, an icon, and a message is displayed on the display unit 44 .

[0295] The display processing unit 437 may generate only rendering information for displaying visual information on the information processing device 4 or a user terminal (not shown) or the like.

[0296] Furthermore, the display processing unit 437 may not prompt the user with the output information via other devices.

[0297] 5. About information processing

[0298] In this section, information processing executed in the above-mentioned information processing system 1 is described.

[0299] Furthermore, this information processing may include any exception processing not shown in the figure.

[0300] Exception processing includes interruption of the information processing and omission of each processing.

[0301] The selection or input performed in this information processing may be based on an operation performed by the user, or may be performed automatically without depending on the operation of the user.

[0302] 5.1. About First Information Processing

[0303] In this section, a first information process which is an example of information processing executed by the information processing system 1 will be described.

[0304] Figure 8 This is an activity diagram showing an example of the flow of the first information processing executed in the information processing system 1 .

[0305] The information processing system 1 can detect abnormal operation of the power storage device 2 by performing the first information processing.

[0306] [Activity A1]

[0307] First, in activity A1 , the acquisition section 431 acquires the thermoelectromotive force E.

[0308] In the present embodiment, the acquisition unit 431 acquires the output signal based on the thermoelectromotive force E output from the comparison unit 351 .

[0309] In other words, the acquisition section 431 acquires the thermoelectromotive force E indirectly.

[0310] Thereafter, the determination unit 433 determines whether the acquired thermoelectromotive force E is equal to or lower than the threshold voltage Vt1 .

[0311] In the present embodiment, when the thermoelectromotive force E is greater than the threshold voltage Vt1 , the comparison unit 351 outputs an output signal, and therefore the determination unit 433 may perform the determination based on whether the acquisition unit 431 acquires the output signal.

[0312] In the present embodiment, this determination is performed for each of the plurality of power storage devices 2 , but the present invention is not limited thereto, and the determination may be performed collectively for at least a part of the power storage devices 2 .

[0313] [Activity A2]

[0314] When it is determined that the thermoelectromotive force E is equal to or lower than the threshold voltage Vt1, the process proceeds to activity A2, and the determination unit 433 determines that the power storage device 2 is normal, and continues the operation of the power storage device 2.

[0315] Thereafter, the process returns to activity A1 to repeat the acquisition and determination of the thermoelectromotive force E.

[0316] [Activity A3]

[0317] On the other hand, when it is determined that the thermoelectromotive force E is greater than the threshold voltage Vt1 , the process proceeds to activity A3 , and the detection unit 432 detects abnormal operation of the power storage device 2 involving heat generation based on the thermoelectromotive force E.

[0318] According to this configuration, the change in temperature gradient J due to heat generation of power storage device 2 changes in a shorter time than the change in temperature due to heat generation of power storage device 2 , and thus abnormal heat generation of power storage device 2 can be detected with higher sensitivity than before.

[0319] [Activity A4]

[0320] Next, the process proceeds to activity A4 , in which the processor 43 turns off the switch 36 corresponding to the power storage device 2 in which the abnormal operation is detected.

[0321] Thereby, the charging and discharging of at least the power storage device 2 which is in the OFF state is restricted.

[0322] Detecting an operational abnormality is also determining the operational state of the power storage device 2 .

[0323] Therefore, the determination unit determines the operating state of the power storage device 2 based on the thermoelectromotive force E.

[0324] According to this configuration, the change in temperature gradient J due to heat generation of power storage device 2 changes in a shorter time than the change in temperature due to heat generation of power storage device 2 , and thus the operating state of power storage device 2 can be distinguished with higher sensitivity than before.

[0325] [Activity A5]

[0326] Then, the process proceeds to activity A5, and the display processing unit 437 notifies the user of the detection result of the abnormal operation.

[0327] The display processing unit 437 notifies the user, via the display unit 44 , of information regarding the power storage device 2 in which abnormal operation is detected in a visible manner.

[0328] The information on the power storage device 2 includes, for example, the details of abnormal operation of the power storage device 2 .

[0329] The notification method is not limited to this and is arbitrary, and may be performed using sound, light, etc.

[0330] Thereafter, the first information processing ends.

[0331] To summarize the above, the information processing system 1 includes the thermoelectric conversion unit 31 , the signal processing circuit 35 as a signal processing unit, and the information processing device 4 .

[0332] The thermoelectric conversion unit 31 is configured to generate a temperature gradient J by heat exchange with the power storage device 2 as a device, and to generate a thermoelectromotive force E based on the temperature gradient J.

[0333] The processor 43 of the information processing device 4 included in the signal processing unit includes an acquisition unit 431 and a detection unit 432 .

[0334] The acquisition unit 431 is configured to acquire the thermoelectromotive force E.

[0335] The detection unit 432 is configured to detect, based on the thermoelectromotive force E, an abnormal operation of the power storage device 2 that involves heat generation.

[0336] According to such a configuration, the change in temperature gradient J due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and thus abnormal heat generation of the device can be detected with higher sensitivity than before.

[0337] 5.2. About the Second Information Processing

[0338] In this section, a second information process which is an example of information processing executed by the information processing system 1 will be described.

[0339] Fig. 9 This is an activity diagram showing an example of the flow of the second information processing executed in the information processing system 1 .

[0340] The information processing system 1 can control the operation of the power storage device 2 and the like based on the acquired thermoelectromotive force E by performing the second information processing.

[0341] Furthermore, controlling the power storage device 2 is not limited to controlling the power storage device 2 by directly sending a signal to the power storage device 2, but also includes indirectly controlling the power storage device 2 by sending a signal to a device different from the power storage device 2 (such as a power converter or a drive device M1) to control the operation of the device.

[0342] [Activity A11]

[0343] First, in activity A11 , the acquisition unit 431 acquires the requested power P and the thermoelectromotive force E of the drive device M1 .

[0344] The method of acquiring the thermoelectromotive force E is arbitrary. When the signal processing circuit 35 includes a voltage measuring unit capable of measuring the thermoelectromotive force E, the acquiring unit 431 may acquire the value of the thermoelectromotive force E from the voltage measuring unit.

[0345] Furthermore, when the signal processing circuit 35 includes a plurality of comparison units 351 so as to be able to compare the thermoelectromotive force E with a plurality of threshold voltages, the acquisition unit 431 may acquire the comparison results between the thermoelectromotive force E and each of the plurality of threshold voltages.

[0346] [Activity A12]

[0347] Next, the process proceeds to activity A12, where the processor 43 searches for the maximum output power Pmax corresponding to the thermoelectromotive force E based on the preset reference information IF0.

[0348] The reference information IF0 is information that defines the correspondence relationship between the thermoelectromotive force E and the maximum output power Pmax, and is stored in the storage unit 42 or the like.

[0349] The thermoelectromotive force E is information indicating the heat flow accompanying the temperature gradient J. Therefore, the thermoelectromotive force E is information indicating the temperature of the power storage device 2, and more specifically, information indicating the time change of the temperature.

[0350] Therefore, the reference information IF0 is information indicating the temperature of the power storage device 2 and the maximum output power Pmax that the power storage device 2 can output at the temperature.

[0351] The reference information IF0 can be generated based on, for example, a test result conducted in advance or a predetermined simulation result, and can be in any form such as a function, a lookup table, or a learned model.

[0352] Thereafter, the determination unit 433 compares the acquired requested power P with the maximum output power Pmax obtained by searching, and determines the magnitude relationship between them.

[0353] In the present embodiment, the comparison unit 351 outputs the comparison result of the thermoelectromotive force E as the first electric signal, and the change unit 434 changes the operation of the power storage device 2 based on the comparison result of the thermoelectromotive force E.

[0354] According to such a configuration, the thermoelectromotive force E generated from the thermoelectric conversion section 31 can be grasped as a difference from a reference value.

[0355] Therefore, it is easy to stably change the operation of the power storage device 2 based on the electric signal output from the thermoelectric conversion unit 31 .

[0356] The changing unit 434 changes the processing of the next activity A13 or activity A14 based on the comparison result of the thermoelectromotive force E, for example.

[0357] [Activity A13]

[0358] When the requested power P is equal to or less than the maximum output power Pmax, the process proceeds to activity A13 , and the device control unit 436 outputs electric power from the power storage device 2 according to the requested power P for driving the device M1 .

[0359] The power storage device 2 outputs electric power by, for example, controlling a power converter (not shown).

[0360] Thereafter, the process returns to activity A11.

[0361] [Event A14]

[0362] On the other hand, when the requested power P is greater than the maximum output power Pmax, the process proceeds to activity A14, where the device control unit 436 limits the drive device M1 so that the requested power P of the drive device M1 becomes less than the maximum output power Pmax, and outputs power from the power storage device 2 according to the limited requested power P.

[0363] Thereby, the power storage device 2 can output electric power suitable for its temperature state, and therefore, progress of degradation of the power storage device 2 can be suppressed.

[0364] In this way, the information processing system 1 searches for the maximum output power Pmax based on the thermoelectromotive force E, and performs control so that the output power of the power storage device 2 does not exceed the maximum output power Pmax.

[0365] To summarize the above, the information processing system 1 includes the thermoelectric conversion unit 31 , the signal processing circuit 35 as a signal processing unit, and the information processing device 4 .

[0366] The thermoelectric conversion section 31 is configured to generate a thermoelectromotive force E according to a temperature gradient J generated in the thermoelectric conversion section 31 by heat exchange with the power storage device 2 as a device.

[0367] The processor 43 of the information processing device 4 included in the signal processing unit includes an acquisition unit 431 and a device control unit 436 .

[0368] The acquisition unit 431 is configured to acquire the thermoelectromotive force E.

[0369] The device control unit 436 is configured to control the operation of the device based on the acquired thermoelectromotive force E.

[0370] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and therefore the device can be controlled at a faster response speed than before.

[0371] 5.2. About third-party information processing

[0372] In this section, a third information process which is an example of information processing executed by the information processing system 1 will be described.

[0373] Fig.10 This is an activity diagram showing an example of the flow of the third information processing executed in the information processing system 1 .

[0374] The information processing system 1 can further estimate the charge state or health state of the power storage device 2 by performing the third information processing.

[0375] [Event A21]

[0376] First, in activity A21 , the acquisition unit 431 acquires the requested power P and the thermoelectromotive force E of the drive device M1 .

[0377] The processing details are the same as those of activity A11.

[0378] [Event A22]

[0379] Next, the process proceeds to activity A22 , where the processor 43 searches for the maximum output power Pmax corresponding to the thermoelectromotive force E based on the preset reference information IF0 .

[0380] The processing details are the same as those of activity A12.

[0381] Thereafter, the determination unit 433 compares the acquired requested power P with the maximum output power Pmax obtained through the search, and determines the magnitude relationship between them.

[0382] [Event A23]

[0383] When the requested power P is equal to or less than the maximum output power Pmax, the process proceeds to activity A23 , and the device control unit 436 outputs electric power from the power storage device 2 according to the requested power P for driving the device M1 .

[0384] The processing details are the same as those of activity A13.

[0385] Thereafter, the process proceeds to activity A25.

[0386] [Event A24]

[0387] On the other hand, when the requested power P is greater than the maximum output power Pmax, the process proceeds to activity A24, where the device control unit 436 limits the driving device M1 so that the requested power P of the driving device M1 becomes less than the maximum output power Pmax, and power is output from the power storage device 2 according to the limited requested power P.

[0388] The details of the processing are the same as those of activity A14.

[0389] Thereafter, the process proceeds to activity A25.

[0390] [Event A25]

[0391] In activity A25 , the acquisition unit 431 acquires the output power of the power storage device 2 , and stores the history of the output power in the storage unit 42 or the like.

[0392] The output power of the power storage device 2 is an example of information on the second electric signal output from the power storage device 2 , and may be an output voltage, an output current, or the like.

[0393] Thereafter, the process returns to activity A21.

[0394] [Event A26]

[0395] On the other hand, after activity A25, in activity A26, the estimation unit 435 estimates the state of charge (SOC) or state of health (SOH) of the power storage device 2 based on the output history of the output power of the power storage device 2 and the thermoelectromotive force E, thereby updating the original SOC and SOH to the estimated values.

[0396] According to such a configuration, the operation of the power storage device 2 can be further stabilized.

[0397] The method of estimating the state of the power storage device 2 is arbitrary. For example, the estimating unit 435 estimates the temperature and temperature change of the power storage device 2 based on the thermoelectromotive force E.

[0398] Then, the estimating unit 435 compares the estimated temperature change with the output history of the output power, thereby estimating the power consumption inside the power storage device 2 due to the discharge of the power storage device 2 at the temperature.

[0399] Next, the estimating unit 435 estimates the internal resistance of the power storage device 2 based on the power consumption in the power storage device 2 and the output voltage of the power storage device 2 .

[0400] This internal resistance is one of the indicators showing the SOH of the power storage device 2 .

[0401] By correcting such internal resistance according to the temperature, the estimation unit 435 can estimate the SOH reflecting the temperature of the power storage device 2 .

[0402] Similarly, the estimation unit 435 can estimate the current SOC of the power storage device 2 in consideration of the temperature state of the power storage device 2 by performing calculations such as adding the power output to the drive device M1 and the power consumed inside the power storage device 2 and subtracting the sum from the power capacity in the fully charged state.

[0403] [Activity A27, Activity A28]

[0404] Furthermore, when the third information processing is performed, in activity A27 , the detection unit 432 may detect that the thermoelectromotive force E exceeds the threshold voltage Vt1 .

[0405] In this case, the process exceptionally proceeds to activity A28 , and the detection unit 432 detects, based on the thermoelectromotive force E, an abnormal operation of the power storage device 2 that involves heat generation.

[0406] [Event A29]

[0407] Thereafter, the process proceeds to activity A29 , in which the processor 43 turns off the switch 36 corresponding to the power storage device 2 in which the abnormal operation is detected.

[0408] The details of the processing are the same as those of activity A4.

[0409] [Event A30]

[0410] Thereafter, the process proceeds to activity A30, and the display processing unit 437 notifies the user of the result of detecting the abnormal operation.

[0411] The details of the processing are the same as those of activity A5.

[0412] Thereafter, the third information processing ends.

[0413] Furthermore, the above-mentioned information processing may be performed individually or in multiple forms.

[0414] Furthermore, the above-mentioned information processing may be performed independently, in parallel, or in collaboration.

[0415] 5. Configuration Example of Information Processing System 1 for Estimating Position Information and the Like of Heat Generation Position of Power Storage Device 2

[0416] In this section, a configuration example of the information processing system 1 for estimating position information and the like of a heat generation position of the power storage device 2 will be described.

[0417] For convenience of explanation, the power storage unit BU is configured such that the thermoelectric conversion unit 31 contacts the first region 311 without the first heat transfer unit 33 . However, as described above, the same applies to the case where the thermoelectric conversion unit 31 contacts the frame 21 via the first heat transfer unit 33 .

[0418] Fig.11 It is a cross-sectional view of the power storage device 2 and the thermoelectric conversion unit 31 in contact with the power storage device 2 , taken along a plane perpendicular to the third direction D3 .

[0419] like Fig.11 As shown, the heat source Q may exist at a position away from the surface of the frame body 21 along the first direction D1.

[0420] Therefore, the temperature of the heat source Q differs from the surface temperature of the housing 21 (in other words, the temperature of the first region 311 ) by a temperature difference ΔT.

[0421] Therefore, the surface temperature of the housing 21 estimated from the temperature gradient J deviates only by the temperature difference ΔT.

[0422] In view of this, the estimation unit 435 of the present embodiment sets the temperature of the first region 311 to the detection temperature Td, and constructs the heat conduction path and the heat circuit model M from the first region 311 to the heat source Q through simulation or the like.

[0423] Fig.12 1 is a diagram showing an example of a thermal circuit model M.

[0424] The estimating unit 435 may use the thermal circuit model M to estimate various information such as the deep temperature of the heat source Q and its position information (for example, the distance from the surface of the housing 21 to the heat source Q in the first direction D1 ) based on the thermoelectromotive force E.

[0425] The thermal circuit model M is expressed as, for example, a parallel connection of a thermal resistor R1 and a thermal capacity C1 , and the estimating unit 435 estimates these parameters through simulation or the like.

[0426] The relationship among the temperature difference ΔT, the thermal resistance, and the heat capacity C1 is represented by, for example, the following relational expression.

[0427] In addition, Q is a natural number indicating the amount of heat generated by the heat source Q, and n is a natural number indicating the number of stages indicating the temporal change in the amount of heat generated by the heat source Q.

[0428]

[0429] Among them, α=t_sampling / (R1×C1), k=t_sampling / C1.

[0430] t_sampling represents the sampling period time.

[0431] In summary, the estimating unit 435 is configured to estimate position information of a heat generation position of the power storage device 2 relative to the surface of the power storage device 2 based on a preset heat conduction model of the power storage device 2 and the surface temperature of the power storage device 2 based on the thermoelectromotive force E.

[0432] According to such a configuration, it is easy to grasp the position of the heat source existing inside the power storage device 2 .

[0433] In addition, when performing correction of temperature change or the like, the information processing system 1 may further include a temperature adjustment element 6 .

[0434] Fig.13 It is a cross-sectional view of the power storage device 2 and the like on a plane perpendicular to the third direction D3 when the thermoelectric conversion unit 31 is in contact with the power storage device 2 via the temperature adjustment element 6 .

[0435] The temperature adjustment element 6 is configured to adjust the temperature of the first region 311 of the thermoelectric conversion section 31 based on the control of the information processing device 4 or the like, and is implemented using, for example, a sheet heater, a Peltier element, or the like.

[0436] The temperature adjustment element 6 is disposed between the frame 21 and the first region 311 of the thermoelectric conversion unit 31 .

[0437] Furthermore, the temperature adjustment element 6 preferably includes a conduction path for heat flow from the frame 21 to the first region 311 .

[0438] The information processing device 4 controls the temperature adjustment element 6 based on the thermoelectromotive force E accompanying the temperature gradient J, and drives the temperature adjustment element 6 so that the thermoelectromotive force E is reduced.

[0439] As a result, the temperature adjustment element 6 adjusts the temperature of the first region 311 so that the temperature gradient J between the first region 311 and the second region 312 becomes lower than a predetermined value.

[0440] In this way, a compact control system can be constructed by performing closed-loop control using the thermoelectric conversion unit 31 , the information processing device 4 , and the temperature adjustment element 6 .

[0441] In addition, the estimation unit 435 can also estimate various information such as the internal parameters of the above-mentioned thermal circuit model M (for example, thermal resistor R1 or heat capacity C1, etc.), the location information of the heat source Q, the degree of degradation of the power storage device 2, etc. based on the control value of the temperature of the temperature adjustment element 6 at this time, the heat flow (temperature gradient J), and the temperature response.

[0442] 6. Another Example of Signal Processing Circuit 35

[0443] In this section, another example of the above-mentioned signal processing circuit 35 is described.

[0444] Fig.14 It is a diagram showing another example of the signal processing circuit 35 .

[0445] like Fig.14 As shown, the signal processing circuit 35 may further include a capacitor 353 .

[0446] The capacitor 353 is arranged between the thermoelectric conversion unit 31 and the non-inverting input terminal of the comparison unit 351, and converts the first electrical signal input to the comparison unit 351 from the thermoelectromotive force E to a signal corresponding to the time differential of the thermoelectromotive force E, that is, the rate of change of the temperature gradient J per unit time.

[0447] In this case, the information processing device 4 can perform the above-mentioned control based on the signal corresponding to the time differential of the thermoelectromotive force E.

[0448] This signal is particularly suitable for detecting a tendency of rapid heat generation due to leakage of electrolyte in power storage section 22 or the like.

[0449] In addition, the function of the signal processing circuit 35 can also be realized by the information processing device 4.

[0450] That is, the information processing device 4 can also function as a signal processing unit.

[0451] In other words, the signal processing circuit 35 is not limited to being realized by an analog circuit, but may be realized by the processor 43 of the information processing device 4 executing a predetermined program.

[0452] In addition, the specific structure of the signal processing circuit 35 is arbitrary and is not limited to the above-mentioned structure.

[0453] [other]

[0454] The above-mentioned form of the information processing system 1 is just an example and is not limited thereto.

[0455] In activity A2 of each information processing described above, the detection unit 432 detects abnormal operation of the power storage device 2 accompanied by heat generation based on the comparison result between the thermoelectromotive force E and the threshold voltage Vt1 , but the abnormal operation detection method is not limited to this and is arbitrary.

[0456] For example, the detection unit 432 may detect abnormal operation of the power storage device 2 based on whether or not the information related to the acquired thermoelectromotive force E satisfies a pre-specified condition indicating abnormal operation.

[0457] The conditions may also be specified based on test results, simulation results, and the like.

[0458] The identification method is arbitrary, and the identification may be performed by processing the test results or the like using an arbitrary statistical method, or may be performed using a learned model learned by inputting the test results or the like.

[0459] The learning algorithm of the learned model is arbitrary, and examples thereof include supervised learning, semi-supervised learning, unsupervised learning, reinforcement learning, and the like.

[0460] The information related to the thermoelectromotive force E is not limited to the thermoelectromotive force E itself, and may include various forms such as a differential value, an integral value, and time series information of the thermoelectromotive force E.

[0461] In particular, the detection unit 432 can detect abnormal operation of the power storage device 2 based on the time series information of the thermoelectromotive force E.

[0462] Thereby, for example, the influence of the continuous use pattern of the equipment such as the power storage device 2 can be taken into consideration to detect abnormal operation, so that the convenience can be improved.

[0463] As in the case of activity A2, the change unit 434 may change the operation of the power storage device 2 in activity A12 and the like based on criteria other than the comparison result between the thermoelectromotive force E and various reference values ​​such as the maximum output power Pmax.

[0464] The change unit 434 may change the operation of the power storage device 2 based on whether the thermoelectromotive force E is within the range of the thermoelectromotive force E corresponding to the operation after the change.

[0465] In particular, the changing unit 434 may change the operation of the power storage device 2 based on the time series information of the thermoelectromotive force E.

[0466] This allows the operation of a device such as the power storage device 2 to be changed in consideration of the influence of the continuous use pattern of the device such as the power storage device 2 , thereby reducing the burden on the device.

[0467] The temperature adjustment unit is not limited to the heat bath 32 , and may be a heat sink, a water cooling device, or the like, as long as the temperature of the second heat transfer unit 34 or the second region 312 of the thermoelectric conversion unit 31 can be adjusted.

[0468] According to the structure including such a temperature adjustment unit, the change in temperature gradient J caused by the heat of the power storage device 2 changes in a shorter time than the change in temperature caused by the heat of the power storage device 2, so abnormal heat generation of the power storage device 2 can be detected with higher sensitivity than before.

[0469] The first signal is not limited to the thermoelectromotive force E, and may be an electrical signal such as current or power caused by the thermoelectromotive force E, or may be a magnetic force induced by the current.

[0470] The second signal is not limited to voltage, current, and power, and may be any signal as long as it includes information that can estimate the SOC or SOH of the power storage unit 22 of each power storage device 2 .

[0471] The main surface portion 331 does not need to be arranged along the outer edge of the frame 21 , and the shape of the main surface portion 331 is arbitrary as long as it can transfer heat from the heat source Q to the thermoelectric conversion unit 31 .

[0472] For example, the main surface portion 331 is configured in such a way that, when the housing 21 is viewed from the first direction D1 , the outer edge of the main surface portion 331 includes a region where the power storage unit 22 may be present.

[0473] The signal processing system 3 may not include the first heat transfer unit 33 .

[0474] Fig.15 This is a diagram showing an example of the signal processing system 3 that does not include the first heat transfer unit 33 .

[0475] like Fig.15 As shown, the thermoelectric conversion unit 31 is arranged such that the first region 311 is in direct contact with the frame body 21 without the first heat transfer unit 33 interposed therebetween.

[0476] The shape of the thermoelectric conversion part 31 is the same as the main surface part 331 of the first heat transfer part 33 described above, and the thermoelectric conversion part 31 is formed so that the outer edge of the frame 21 includes the outer edge of the thermoelectric conversion part 31 when viewed from the first direction D1.

[0477] Thereby, the generation of the heat source Q can be detected in a wider range.

[0478] The first heat transfer portion 33 may include the protruding portion 332 instead of the main surface portion 331 .

[0479] In this case, the protrusion 332 is arranged so as to be in contact with at least a part of the outer edge of the frame body 21 .

[0480] The signal processing system 3 may not include the second heat conducting portion 34 .

[0481] For example, the thermoelectric conversion unit 31 may be configured such that the second region 312 is in direct contact with the heat bath 32 without the second heat transfer unit 34 being interposed therebetween.

[0482] For example, the heat bath 32 may be arranged so as to cover the second region 312 of the thermoelectric conversion unit 31 from the first direction D1.

[0483] In addition, the signal processing system 3 may not include the heat bath 32 .

[0484] The position where the thermoelectric conversion unit 31 is mounted is not limited to the surface of the frame 21 , and may be any position as long as the presence of the heat source Q can be detected.

[0485] Fig.16 It is a diagram showing an example of a mounting method of the thermoelectric conversion unit 31 .

[0486] like Fig.16 As shown, the thermoelectric conversion unit 31 may also be accommodated inside the frame 21 .

[0487] At this time, the shape of the thermoelectric conversion unit 31 is arbitrary, for example, Fig.15 The flat plate shown.

[0488] The thermoelectric conversion unit 31 is not limited to the one expressing the anomalous Nernst effect as described above, and may be configured to express the Seebeck effect or the like.

[0489] In this case, the temperature gradient J of the thermoelectric conversion unit 31 induces a thermoelectromotive force E including a component parallel to the temperature gradient J, and therefore wiring is required to extract the thermoelectromotive force E in a direction parallel to the temperature gradient J.

[0490] The object to be connected to the power storage unit BU is not limited to a device driven by electric power from the power storage unit BU, such as the drive device M1 described above.

[0491] For example, the power storage unit BU may be connected to a charging device that supplies electric power to the power storage unit BU.

[0492] The charging device includes, for example, a power source such as a commercial power source, and a power converter that converts electric power from the power source.

[0493] In this case, the information processing device 4 of the electric storage unit BU transmits the requested power P to the charging device, and the electric storage unit BU transmits electric power corresponding to the requested power P to the electric storage unit BU.

[0494] The above-mentioned information processing can also be applied to the information processing system 1 of this structure.

[0495] In the above embodiment, the case where the power storage device 2 generates heat from the heat source Q is described. However, the same is true even when the power storage device 2 absorbs heat from the heat source Q.

[0496] That is, the same applies to a case where the temperature of the first region 311 of the thermoelectric conversion unit 31 is lower than the temperature of the second region 312 due to a situation such as the temperature of the frame 21 being lower than the temperature of the heat bath 32 or the like.

[0497] Therefore, the heat exchange between the power storage device 2 and the thermoelectric conversion section 31 is not limited to the case where heat is transferred from the power storage device 2 to the thermoelectric conversion section 31 , but may include the case where heat is transferred from the thermoelectric conversion section 31 to the power storage device 2 .

[0498] The information processing performed in the information processing system 1 may be performed in an on-premises manner or in a cloud manner.

[0499] As a cloud-based external device, for example, the above-mentioned functions and processes may be provided in the form of SaaS (Software as a Service) or cloud computing.

[0500] In the above-described embodiment, the signal processing system 3 and the information processing device 4 perform various storage and control operations. However, a plurality of external devices may be used instead of the signal processing system 3 and the information processing device 4 .

[0501] That is, various information or programs can also be distributed and stored in multiple external devices using blockchain technology, etc.

[0502] The above-mentioned embodiment is not limited to the information processing system 1 , and may be an information processing method or an information processing program.

[0503] Therefore, to summarize the above, the information processing method performed by the information processing system 1 includes the following steps.

[0504] In the thermoelectric conversion step, a thermoelectromotive force E is generated according to a temperature gradient J generated in the thermoelectric conversion section 31 by heat exchange with the power storage device 2 as a device.

[0505] The power storage device 2 as a device is configured to generate heat according to the operating state of the device.

[0506] The determination unit 433 determines the operating state of the device based on the thermoelectromotive force E.

[0507] In addition, to summarize the above, the information processing method executed by the information processing system 1 includes the following steps.

[0508] In the thermoelectric conversion step, a temperature gradient J is generated by heat exchange with the power storage device 2 , and based on the temperature gradient J, a thermoelectromotive force E is generated.

[0509] In the acquisition step, the thermoelectromotive force E is acquired.

[0510] In the detection step, based on the thermoelectromotive force E, abnormal operation of the power storage device 2 accompanied by heat generation is detected.

[0511] According to such a configuration, the change in temperature gradient J due to heat generation of power storage device 2 changes in a shorter time than the change in temperature due to heat generation of power storage device 2 , so abnormal heat generation of power storage device 2 can be detected with higher sensitivity than before.

[0512] It can also be provided in the following ways.

[0513] (1) An information processing system comprising a thermoelectric conversion unit and a signal processing unit, wherein the thermoelectric conversion unit is configured in such a way that a temperature gradient is generated by heat exchange with a device and a thermoelectromotive force is generated based on the temperature gradient, and the signal processing unit comprises an acquisition unit and a detection unit, wherein the acquisition unit is configured in such a way that the thermoelectromotive force is acquired, and the detection unit is configured in such a way that an abnormal operation of the device accompanied by heat generation is detected based on the thermoelectromotive force.

[0514] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and thus abnormal heat generation of the device can be detected with higher sensitivity than before.

[0515] (2) An information processing system comprising a thermoelectric conversion unit and a signal processing unit, wherein the thermoelectric conversion unit is configured to generate a thermoelectromotive force based on a temperature gradient generated in the thermoelectric conversion unit through heat exchange with a device, and the signal processing unit comprises an acquisition unit and a device control unit, wherein the acquisition unit is configured to acquire the thermoelectromotive force, and the device control unit is configured to control the operation of the device based on the acquired thermoelectromotive force.

[0516] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and therefore the device can be controlled at a faster response speed than before.

[0517] (3) The information processing system according to (1) or (2), wherein the thermoelectric conversion unit is configured to generate the thermoelectromotive force including a component generated in a direction different from the temperature gradient.

[0518] According to such a configuration, it is easy to measure the thermoelectromotive force from a direction different from the temperature gradient, and therefore it is possible to reduce wiring and the like between the device and the thermoelectric conversion unit.

[0519] Therefore, a decrease in sensitivity to a temperature gradient can be suppressed.

[0520] (4) The information processing system according to any one of (1) to (3) above, further comprising a first heat transfer portion, wherein the first heat transfer portion connects the device and the thermoelectric conversion portion.

[0521] According to such a configuration, heat exchange between the device and the thermoelectric conversion unit is performed via the first heat transfer unit, so that variations in thermoelectromotive force due to differences in heat generation positions of the device can be reduced.

[0522] (5) The information processing system according to (4) above, wherein the first heat transfer section includes a protruding section configured to protrude from the device when the device is viewed from a predetermined first direction, and the thermoelectric conversion section is connected to the protruding section.

[0523] According to such a configuration, the thermoelectromotive force of the thermoelectric conversion section can be measured more easily, and thus the degree of freedom in arrangement of equipment and the like can be improved.

[0524] (6) According to any one of the above (1) to (5), the information processing system further has a second heat conducting part, and the thermoelectric conversion part includes a first area for performing heat exchange with the device, and a second area located in the direction of the temperature gradient from the first area, and the second heat conducting part is connected to the second area.

[0525] According to this configuration, the temperature gradient generated in the thermoelectric conversion section can be understood based on the temperature of the second heat transfer section, and thus the information obtained from the thermoelectromotive force can be increased.

[0526] Therefore, a wider variety of heat-related treatments can be performed.

[0527] (7) The information processing system according to (6) above, wherein the second heat transfer portion is connected to a temperature adjustment portion capable of adjusting a temperature of the second heat transfer portion.

[0528] According to such a structure, it is easy to grasp the temperature gradient of the thermoelectric conversion part more accurately.

[0529] (8) The information processing system according to (6) or (7), wherein the second heat transfer portion includes a heat dissipation portion capable of dissipating at least a portion of the heat flowing into the thermoelectric conversion portion through the heat exchange.

[0530] According to such a configuration, heat generated by heat generation of the device can be released from the heat dissipation portion, and therefore, an excessive temperature rise of the thermoelectric conversion portion can be suppressed.

[0531] (9) The information processing system according to any one of (6) to (8), wherein the second heat transfer portion is connected to a heat bath at a predetermined reference temperature to maintain the temperature of the second region at substantially the reference temperature.

[0532] According to such a configuration, the operating temperature of the thermoelectric conversion unit is stabilized, and therefore the accuracy of detecting the heating state of the device can be improved.

[0533] (10) An information processing system according to the above (9), wherein the signal processing unit further comprises a comparison unit and a change unit, and the comparison unit is configured to compare a first signal caused by the thermoelectromotive force of the thermoelectric conversion unit with a prescribed reference value, and the change unit is configured to change the operation of the device based on the comparison result of the first signal.

[0534] According to such a configuration, the thermoelectromotive force generated in the thermoelectric conversion unit can be grasped as a difference from a reference value.

[0535] Therefore, it is easy to stably change the operation of the device according to the signal output from the thermoelectric conversion unit.

[0536] (11) An information processing system according to any one of (1) to (10) above, wherein the device is a power storage device that can charge and discharge electric power, and the signal processing unit further has a first estimation unit, and the acquisition unit is configured in a manner capable of acquiring information related to a second signal output from the power storage device, and the first estimation unit is configured in a manner to estimate the charging state or health state of the power storage device based on the output history of the second signal and the thermoelectromotive force.

[0537] According to such a configuration, the operation of the power storage device can be further stabilized.

[0538] (12) An information processing system according to any one of (1) to (11) above, wherein the thermoelectric conversion unit is configured in such a way that the thermoelectromotive force changes according to the temperature change on the surface of the device caused by heat, and the signal processing unit further includes a second estimating unit, which is configured in such a way that position information of the heat generation position of the device relative to the surface of the device is estimated based on a predetermined thermal conductivity model of the device and the temperature of the surface of the device based on the thermoelectromotive force.

[0539] According to such a configuration, it is easy to grasp the position of the heat source existing inside the device.

[0540] (13) The information processing system according to any one of (1) to (12) above, further comprising the device.

[0541] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and thus abnormal heat generation of the device can be detected with higher sensitivity than before.

[0542] (14) An information processing method comprising the following steps: in a thermoelectric conversion step, a thermoelectromotive force is generated based on a temperature gradient generated in a thermoelectric conversion unit through heat exchange with a device, wherein the device is configured to generate heat based on an operating state of the device; and in a determination step, the operating state of the device is determined based on the thermoelectromotive force.

[0543] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and therefore the operating state of the device can be determined with higher sensitivity than before.

[0544] (15) An information processing method, comprising the following steps: in a thermoelectric conversion step, a temperature gradient is generated by heat exchange with a device, and a thermoelectromotive force is generated based on the temperature gradient; in an acquisition step, the thermoelectromotive force is acquired; and in a detection step, abnormal operation of the device accompanied by heat generation is detected based on the thermoelectromotive force.

[0545] According to such a configuration, the change in temperature gradient due to heat generation of the device changes in a shorter time than the change in temperature due to heat generation of the device, and thus abnormal heat generation of the device can be detected with higher sensitivity than before.

[0546] Of course, it is not limited to this.

[0547] Finally, various embodiments of the present invention have been described, but these are presented as examples and are not intended to limit the scope of the invention.

[0548] This new embodiment can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention.

[0549] The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.

[0550] Also, note the following points.

[0551] Conventionally, measures have been taken to establish system safety using a single temperature.

[0552] Currently, a temperature sensor is used to detect abnormal heating of a battery.

[0553] Therefore, only a case where the temperature rises and an abnormal state occurs can be detected.

[0554] In addition, since only a local temperature rise can be detected, it may not be detected until the heat is quite high.

[0555] Currently, because abnormal heating is detected using temperature, abnormality is detected only when the body becomes hot.

[0556] Only local temperature can be detected.

[0557] By using a thin-film heat flow sensor that detects heat generation, the discharge / charge of the battery can be stopped before an abnormal condition develops.

[0558] In addition, since the surface and the electrical heat path can be used for range measurement, a structure is realized in which abnormal parts are unlikely to be missed.

[0559] Since the heat generation can be measured directly, faster measurement is possible and abnormal heat generation can be detected comprehensively.

[0560] This embodiment is described.

[0561] In this embodiment, by installing a heat flow sensor that monitors the amount of heat generated on the battery pack, abnormality detection can be performed more sensitively than by monitoring the temperature.

[0562] Furthermore, by installing it over a large area, abnormality detection can be performed over a wider range.

[0563] The heat flow sensor of the present embodiment is preferably a thin-film type heat flow sensor based on the anomalous Nernst effect from the viewpoint of responsiveness.

[0564] Elements of heat flow sensors (ie, thermoelectric conversion devices) may also be formed from compounds that exhibit the anomalous Nernst effect.

[0565] The element may also be composed of, for example, a topological ferromagnet or a topological antiferromagnet known as a Weyl semimetal, or a ferrimagnet, or a combination thereof.

[0566] The topological ferromagnet can be a metal composed of Co2Tx such as Co2MnGa (X is any one of Si, Ge, Sn, Al, and Ga), or an alloy of a well-known topological ferromagnet such as a metal represented by a composition formula of Fe3X (X is a typical element such as Al or Ga or a stoichiometric composition of a transition element).

[0567] In addition, the topological antiferromagnet may be a well-known topological antiferromagnet such as Mn3X (X is one or more elements selected from Sn, Ge, Ga, Pt, Ir, Rh, or a compound thereof).

[0568] The compound constituting the element is composed of, for example, an alloy containing a transition metal. The alloy is a compound having a crystal structure having a cage lattice plane composed of the transition metal. The alloy may also be a compound showing the anomalous Nernst effect.

[0569] There is no particular limitation on the ferrimagnet as long as it exhibits the anomalous Nernst effect.

[0570] There is no particular limitation on the structure of the element, and a known structure can be used.

[0571] In addition, a heat flow sensor may be directly disposed in the battery pack.

[0572] Since it is a thin-film heat flow sensor, a sensor PCB or other substrate is not required.

[0573] The heat flow sensor may be installed on each single battery cell, or may be installed on each single battery cell in the case of a multi-cell battery.

[0574] In addition, a heat sink may be provided on the heat flux sensor.

[0575] The heat sink may be a known heat sink, but the structure needs to be properly designed.

[0576] The heat flux sensor can adjust the heat flux through the heat sink, so the thermal design of the heat sink installation can also be performed.

[0577] Of course, the heat sink only needs to ensure a heat flow path, and the optimal shape can be used according to each design.

[0578] In addition, of course, it is not limited to the case of using a radiator. There are also cooling methods such as air cooling / water cooling to manage the thermal state. In this case, if a temperature sensor is used to manage the temperature of the heat flow sensor, the performance will be better.

[0579] In addition, of course, the single battery can also be transformed into a multi-cell battery.

[0580] In addition, the heat flow sensor may also be disposed inside the battery cell.

[0581] Since it is a thin-film heat flow sensor, if the terminals can be extended outward, it can detect heat even if it is placed inside a battery cell.

[0582] The installation location at this time is the case, the inside of the battery, between electrodes, etc., and there is no problem as long as it can be placed in a chemically stable location.

[0583] In this case, there is no problem in using the electrode / casing etc. as a heat sink.

[0584] In addition, the single battery can also be transformed into a multi-cell battery.

[0585] In addition, a heat conduction path for conducting heat may also be provided.

[0586] A heat conduction path is created to guide heat to a heat flow sensor, and the heat flow is detected by guiding the heat.

[0587] Therefore, detection is possible even in places where it is difficult to place the sensor.

[0588] In addition, the heat conduction path and the heat flow sensor are more preferably made of fine ceramics, semiconductors, resins, paste materials, etc. that are electrically insulating but thermally conductive.

[0589] Furthermore, even if the noise increases when the heat flow sensor is in electrical contact with the heat conduction path, measurement is still possible.

[0590] The heat conduction path can also use existing materials such as Al electrodes of battery materials.

[0591] An example of a battery failure protection system based on the heat flow detection system of the present embodiment will be described.

[0592] The absolute value or gradient of the calorific value Q, a value derived from the calorific value, or a calculated value using the calorific value and other parameters can be used as a determination value to cut off the charging / discharging of the battery.

[0593] By installing this fault protection function, more reliable battery management can be performed.

[0594] The following formula is written using an analog circuit, but there is no problem in performing digital control.

[0595] In addition, the above information can also be used to provide feedback for the control of battery charging / discharging, thereby performing more reliable battery management.

[0596] Furthermore, when a battery is charged or discharged, charging or discharging of a battery that is detected to be generating a large amount of heat is temporarily stopped, and switching is performed at a duty ratio (DUTY) that reduces the heat flow, thereby extracting required power from the plurality of batteries.

[0597] As long as balancing can be achieved, other methods may be used.

[0598] In addition, conventionally, the battery's SOH (State of Health) has been estimated using information on the battery's internal impedance / current / voltage / charge / discharge times / temperature history. However, by adding the calorific value, the accuracy of the SOH can be further improved.

[0599] For example, by monitoring the amount of heat generated under voltage / current driving conditions of the same state, battery degradation can be detected.

[0600] In addition, if the comparison is made using unit energy or a parameter similar thereto, a real-time comparison of DeSOH can be made.

[0601] Furthermore, it is of course possible to estimate characteristic parameters of batteries other than these.

[0602] In addition, based on this data, the battery life can be calculated and a replacement reminder can be given.

[0603] In addition, as another embodiment, the deep temperature of the battery may be measured based on the heat generated by the battery.

[0604] This measurement information can also be used in the system.

[0605] Although the model is a simple model, it is sufficient to make an estimated model in accordance with the system.

[0606] In addition, a heating element can be installed between the sensor and the battery and closed-loop control can be performed to perform model prediction / measurement.

[0607] Furthermore, internal parameters can be estimated based on the control value, heat flow, temperature response, etc., and R1, C1, and the distance to the heat source can be estimated, thereby detecting the influence of degradation in more detail.

[0608] Since information on R1 and C1 can be obtained, measurements that are resistant to interference (individual differences / chronic changes) can be performed.

Claims

1. An information processing system, A thermoelectric conversion unit and a signal processing unit are provided, and The thermoelectric conversion unit is configured such that a temperature gradient is generated by heat exchange with a device, and a thermoelectromotive force is generated based on the temperature gradient. The signal processing unit includes an acquisition unit and a detection unit. The acquisition unit is configured to acquire the thermoelectromotive force. The detection unit is configured to detect abnormal operation of the device accompanied by heat generation based on the thermoelectromotive force.

2. An information processing system, A thermoelectric conversion unit and a signal processing unit are provided, and The thermoelectric conversion part is configured to generate thermoelectromotive force according to a temperature gradient generated in the thermoelectric conversion part by heat exchange with the device. The signal processing unit includes an acquisition unit and a device control unit. The acquisition unit is configured to acquire the thermoelectromotive force. The device control unit is configured to control the operation of the device based on the acquired thermoelectromotive force.

3. The information processing system according to claim 1 or claim 2, wherein: The thermoelectric conversion section is configured to generate the thermoelectromotive force including a component generated in a direction different from the temperature gradient.

4. The information processing system according to any one of claims 1 to 3, further comprising a first heat transfer unit, and The first heat conducting part connects the device and the thermoelectric conversion part.

5. The information processing system according to claim 4, wherein: The first heat conducting portion includes a protruding portion, The protrusion is configured to protrude from the device when the device is viewed from a predetermined first direction. The thermoelectric conversion portion is connected to the protrusion.

6. The information processing system according to any one of claims 1 to 5, further comprising a second heat transfer unit, and The thermoelectric conversion unit includes a first region that performs heat exchange with the device, and a second region located in the direction of the temperature gradient from the first region. The second heat conducting portion is connected to the second region.

7. The information processing system according to claim 6, wherein: The second heat conducting portion is connected to a temperature adjusting portion capable of adjusting a temperature of the second heat conducting portion.

8. The information processing system according to claim 6 or claim 7, wherein: The second heat transfer portion includes a heat dissipation portion capable of dissipating at least a portion of the heat flowing into the thermoelectric conversion portion through the heat exchange.

9. The information processing system according to any one of claims 6 to 8, wherein: The second heat transfer portion is connected to a heat bath at a predetermined reference temperature so as to maintain the temperature of the second region substantially at the reference temperature.

10. The information processing system according to claim 9, wherein: The signal processing unit further includes a comparison unit and a change unit. The comparison unit is configured to compare a first signal caused by the thermoelectromotive force of the thermoelectric conversion unit with a predetermined reference value. The changing unit is configured to change the operation of the device based on a comparison result of the first signal.

11. The information processing system according to any one of claims 1 to 10, wherein: The device is a power storage device capable of charging and discharging electric power, The signal processing unit further includes a first estimating unit, The acquisition unit is configured to acquire information related to a second signal output from the power storage device. The first estimating unit is configured to estimate a charge state or a health state of the power storage device based on an output history of the second signal and the thermoelectromotive force.

12. The information processing system according to any one of claims 1 to 11, wherein: The thermoelectric conversion unit is configured so that the thermoelectromotive force changes according to a change in the temperature of the surface of the device caused by heat generation. The signal processing unit further includes a second estimating unit, The second estimating unit is configured to estimate position information of a heat generation position of the device relative to the surface of the device based on a preset heat conduction model of the device and the temperature of the surface of the device based on the thermoelectromotive force.

13. The information processing system according to any one of claims 1 to 12, wherein Furthermore, the device is included.

14. An information processing method, comprising: The following steps: In the thermoelectric conversion step, a thermoelectromotive force is generated according to a temperature gradient generated in the thermoelectric conversion section by heat exchange with a device, wherein the device is configured to generate heat according to an operating state of the device. In the determination step, an operating state of the device is determined based on the thermoelectromotive force.

15. An information processing method comprising The following steps: In the thermoelectric conversion step, the device is configured to generate a temperature gradient by heat exchange with the device, and a thermoelectromotive force is generated based on the temperature gradient. In the acquisition step, the thermoelectromotive force is acquired, In the detection step, abnormal operation of the device accompanied by heat generation is detected based on the thermoelectromotive force.

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