Power module having first circuit carrier comprising carrier substrate

Abstract

The invention relates to a power module having a first circuit carrier, which is formed from a carrier substrate, and having a first conductor structure, which has an outer contact region, and having at least one second conductor structure, which has an outer contact region, and having a third conductor structure, which has an outer contact region. The second conductor structure has at least one outer contact area and the third conductor structure includes an outer contact area. A first set of semiconductor structure elements and a second set of semiconductor structure elements are provided. Semiconductor structural elements arranged in groups on the bottom of the power module in the second plane are electrically connected via bonding wires and / or at least one contact strip to a T + bridge and a phase bridge arranged in the first plane of the multifunctional frame.

Description

Technical Field

[0001] The invention relates to a power module, comprising a first circuit carrier comprising a carrier substrate and a first conductor structure having an external contact region, at least one second conductor structure having at least one external contact region, and a further third conductor structure comprising an external contact region. Background Art

[0002] In the prior art, power modules are additionally molded, which are installed, for example, in a power module bridge. During molding, the power modules are embedded in a solid protective housing, which consists, for example, of plastic (molding mass). The molding mass serves to encase and protect the interior of the power module. However, this encasement of the power module by the molding mass is not particularly resistant to cracks.

[0003] A power module is known from DE 11 2017 004 390 T5, which has the following features: an insulating substrate having a front side, on which a power semiconductor element is fastened; a base plate, which is connected to the back side of the insulating substrate; a housing, which is fastened to the base plate and surrounds the insulating substrate; a cover, which is fastened to the housing and forms a sealed area; and a silicone gel, which serves as a filling element, which fills the entire sealed area and has an internal stress, which serves as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, which is used in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A corresponding first power transistor of the at least two first power transistors is directly arranged on a corresponding first contact surface of the first contact surfaces, and is directly connected to the corresponding first contact surface in an electrically conductive manner via the ground contact surface of the first power transistor. In addition, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface. At least two second power transistors are directly arranged on the second contact surface, and are directly connected to the second contact surface in an electrically conductive manner via the corresponding ground contact surface of the second power transistor. In addition, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on the side of the second power transistor facing away from the surface of the circuit carrier, and the respective second power transistor of the at least two second power transistors is connected to the respective third contact surface of the at least two third contact surfaces in an electrically conductive manner via the further contact surface of the second power transistor. The at least two first contact surfaces and the at least two third contact surfaces are arranged in a longitudinal direction of the power module. The at least two first power transistors are arranged in an alternating manner one after the other on the circuit carrier, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, wherein the second contact surface has at least two contact areas, wherein a corresponding contact area of ​​the at least two contact areas is located next to a corresponding first power transistor of the at least two first power transistors. The at least two first power transistors each have an additional contact surface on the side of the surface of the first power transistor facing away from the circuit carrier, and the corresponding first power transistor of the at least two first power transistors is connected to a corresponding contact area of ​​the at least two contact areas of the second contact surface in an electrically conductive manner via the additional contact surface of the first power transistor, and the corresponding contact area is located next to the corresponding first power transistor. Here, the at least two contact areas of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor device or a control device. In this case, an end section of the flexible foil is electrically contacted at a contact point by heat input, wherein the end section of the flexible foil is mounted at the contact point on an electrical contact that is designed in a protruding manner. The end section of the flexible foil is designed as a wave-like impact portion, in particular as a deflection portion. Summary of the invention

[0006] According to the invention, a power module is provided, which comprises a first circuit carrier, a first conductor structure, at least one second conductor structure and a further third conductor structure, a first group of semiconductor components and a second group of semiconductor components, the first circuit carrier comprising a carrier substrate, the first conductor structure having an external contact region, the second conductor structure having at least one external contact region, and the third conductor structure comprising an external contact region. The group of semiconductor components arranged on the bottom of the power module in the second plane is electrically contacted to components arranged in the first plane of the multifunctional frame, in particular a T+ bridge and / or a phase bridge, via bonding wires and / or at least one contact strip.

[0007] The solution proposed according to the invention makes it possible to decouple the arrangement plane of the semiconductor components from the plane in which the T+ bridge and / or the phase bridge are arranged. In particular, the contacting between the components arranged in the first or second plane is formed via proven bonding technology.

[0008] In an advantageous configuration of the power module proposed according to the present invention, a bonding wire and / or at least one contact strip extends through an opening from a current-conducting contact surface arranged in a first plane to a contact surface of a semiconductor structure element, wherein the current-conducting contact surface arranged in the first plane is in the form of a T+ bridge, and the semiconductor structure element is arranged in a second plane.

[0009] In another advantageous configuration of the power module according to the invention, the multifunctional frame is arranged above or below the power module in the Z direction. The requirements of the end user can be taken into account by the variability of the multifunctional frame relative to the power module in the Z direction.

[0010] Advantageously, in the power module proposed according to the invention, the openings are implemented in a number corresponding to the number of semiconductor components to be contacted in the T+ bridge and / or the phase bridge.

[0011] In the power module proposed according to the invention, the bonding wires and / or at least one contact strip are connected to connection pads which are arranged on the current-carrying contact surface. This allows a more robust electrical connection, since a surface with good adhesion properties can be implemented on the connection pads.

[0012] In a further advantageous embodiment variant of the power module proposed according to the invention, the power module is connected to the cooling surface either via a planar sintered connection or via a planar soldered / adhesive connection.

[0013] In the power module proposed according to the invention, the arrangement consisting of an equipped multifunctional frame on the one hand and an equipped power module on the other hand is surrounded by a molded mass, the equipped multifunctional frame and the equipped power module being in electrical contact with each other, the molded mass having one or more access openings.

[0014] In another advantageous possible embodiment of the power module proposed according to the invention, the T+ bridge and the T- bridge are accommodated one above the other in the first plane of the multifunctional frame with a minimum spacing therebetween. Alternatively, there is also the possibility of arranging the mentioned components side by side so that the magnetic fields that occur substantially cancel each other out, thereby making it possible to form a low-inductance connection.

[0015] In another advantageous embodiment of the power module according to the invention, the bottom surface of the power module forms a second plane, in which the semiconductor components are arranged in a manner decoupled from the first plane. With this embodiment, the current-conducting components can be moved into the functional framework, while the semiconductor components remain in the power module in a spatially separated manner, thereby saving valuable (chip) area of ​​the semiconductor components.

[0016] Advantages of the present invention

[0017] By the solution proposed according to the invention or the embodiment of the power module according to the invention, the active surface and the layout surface for current guidance can be separated from each other. By the arrangement of the multifunctional frame that can be arranged above or below the power module, for example, the current guidance is moved from the power module to the multifunctional frame arranged above the power module. Therefore, an improved cooling possibility for semiconductor components is generated. The semiconductor components can be transistors, flip-flops, MOSFETs, IGBTs, diodes or the like. By the arrangement proposed according to the invention, improved cooling can be achieved because a larger spacing between semiconductor components can be achieved. By the solution proposed according to the invention, the following possibility is generated: the path of the current guidance in the form of a T+ bridge and / or a T- bridge and / or a phase bridge with corresponding external contact areas is moved to the multifunctional frame above or below the power module, and there is implemented in a low-inductance manner in a top-to-bottom or side-by-side manner while observing the minimum possible spacing, because the magnetic fields that appear in the path of the current guidance cancel each other out. The implementation possibility of the path of the current guidance as a low-inductance current path reduces the switching losses that occur and allows shorter switching times.

[0018] Due to the decoupling of the first and second planes in the power module and in the multifunctional frame, a compact design of the power module proposed according to the invention is produced. In addition, the selected arrangement of the two functional planes one above the other, namely the first plane on which the semiconductor components are arranged and the second plane on which the current is conducted, can significantly improve production and also increase the service life of the power module.

[0019] In particular, a robust electrical contacting possibility of the aforementioned components is achieved when the contacting of the semiconductor components in the first plane and the current-carrying contact surfaces in the second plane, i.e. within the multifunctional frame, is formed by press-in pins. In addition, the embodiment of press-in pins is technically proven and can be robustly implemented in large-scale production.

[0020] According to the solution proposed in accordance with the invention, the underside of the power module and the top side of the cooling surface can advantageously be formed either by a planar sintered connection, by a planar soldered connection or by a planar adhesive connection. All variants offer the advantage of planar contacting, whereby the waste heat generated during operation of the semiconductor components can be reliably discharged. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

[0022] The accompanying drawings show:

[0023] Figure 1 shows a plan view of a first circuit carrier of a power module, which consists of a carrier substrate and one possible arrangement of semiconductor switches,

[0024] Figure 2 shows a plan view of a power module having a cooling surface and a layout surface separated from one another, which has a region for the lateral arrangement of press-in pins,

[0025] Figure 3 shows an arrangement consisting of a power module accommodated on a cooling surface and a multifunctional frame arranged above the power module in the Z direction,

[0026] Figure 4 Shown in Figure 3 The parts shown in the joined state are separate components,

[0027] Figure 5 An exploded schematic diagram showing components housed in a multifunctional frame,

[0028] Figure 6 shows a perspective top view of a current-conducting contact surface arranged in the multifunctional frame, which contact surface is located in a plane above the plane in which the semiconductor components are arranged,

[0029] Figure 7 An embodiment variant of an arrangement consisting of a power module with semiconductor components accommodated therein, contact surfaces and their electrical contacting via contact strips is shown,

[0030] Figure 8 The arrangement of a power module bridge having a plurality of power modules next to a battery system is shown. DETAILED DESCRIPTION

[0031] In the following description of embodiments of the invention, identical or similar elements are denoted by the same reference numerals, wherein a repeated description of these elements is omitted in individual cases. The figures merely schematically illustrate the subject matter of the invention.

[0032] Figure 1 A plan view of a power module 12 is shown, in particular a plan view of a first circuit carrier 14 of the power module.

[0033] From the basis Figure 1It can be seen from the top view of the power module 12 that the carrier substrate 40 of the first circuit carrier 14 is provided with a plurality of conductor structures 18, 20A, 20B, 22. The first circuit carrier 14 extends in the X,Y plane 10, wherein the first circuit carrier 14 is provided with an electrically insulating layer 16. The first conductor structures 18 are located on the electrically insulating layer in a manner separated from each other by channel-shaped interruptions, and the first conductor structures have an external contact area 18.2. In addition, second conductor structures 20A, 20B are located on the first circuit carrier 14 in a manner symmetrical to each other with respect to the central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact area 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the first circuit carrier 14 or to the electrically insulating layer 16 of the first circuit carrier, and the third conductor structure has at least one external contact area 22.2.

[0034] The conductor structures 18, 20A, 20B, 22 mentioned are electrically separated from one another and are applied to the first circuit carrier 14 in a substantially symmetrical manner with respect to the central longitudinal axis 24. The active surface is indicated by the position 36, and the layout surface for conducting the current flowing around the active surface is indicated by the reference numeral 38. Preferably, an AMB (Active Metal Brazing) is selected as the carrier substrate 40 of the first circuit carrier 14, which AMB includes an OFC (oxygen-free copper, Si3N4 / OFC layer).

[0035] From the basis Figure 2 A top view of the power module 12 can be seen in the schematic diagram of FIG. 1 , wherein semiconductor components are arranged on the active surface 36 , such as transistors, MOSFETs or other semiconductor components that can be used as semiconductor switches. Figure 2 It can be seen that on the one hand, a first group 64 of semiconductor components 42 are accommodated on the active surface 36. The individual semiconductor components 42 can be designed as MOSFETs, for example, and have control attachment terminals 34 on their outer sides, via which control attachment terminals, not shown in more detail, can be implemented for the individual semiconductor components 42 of the first group 64 of semiconductor components 42. Analogously to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, and control attachment terminals 34 are respectively constructed on the outer regions of the second group of semiconductor components. The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control attachment terminals 34, but this is not shown in detail according to Figure 2 Not shown in more detail in the schematic diagram.

[0036] In addition, according to Figure 2 It can be seen from the top view that Figure 2 In the X,Y plane 10 shown, on the longitudinal side of the first circuit carrier 14 in the form of a carrier substrate 40, there are regions in which the press-in pins 76-94 project to a position corresponding to the longitudinal direction of the first circuit carrier 14. Figure 2 In particular, this relates to the first and second press-in pins 76, 78 as well as the third and fourth press-in pins 80, 82 as well as the fifth and sixth press-in pins 84, 86 arranged opposite one another. In the region of the opposite end faces of the first circuit carrier 14, the seventh and eighth press-in pins 88, 90 as well as the ninth and tenth press-in pins 92, 94 are arranged. Figure 3 and Figure 4 The spatial arrangement of the press-in pins 76 , 78 , 80 , 82 , 84 , 86 , 88 , 90 , 92 , 94 can be seen in more detail in the schematic diagram of .

[0037] From the basis Figure 3 It can be seen from the side view that the power module 12 shown here from the outside is accommodated with its bottom side 120 on the cooling surface 106. When viewed in the Z direction 54, the multifunctional frame 50 is located above the power module 12. Figure 3 On the upper side of the multifunctional frame 50 shown from the side in FIG. 1 , individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here in the drawing plane—protrude upward in the vertical direction. Via these press-in pins 76-94, components arranged in the multifunctional frame 50 or in the power module 12 arranged below the multifunctional frame can be electrically contacted in a robust and simple manner.

[0038] Figure 4 Will be in Figure 3 The parts shown in the joined state are shown as separate components. Figure 3 Similarly, the press-in pins 76-94 protruding above the upper side are located on the multifunctional frame 50, which is mounted, for example, on the upper side of the power module 12 in the mounting direction 130. On the side, the multifunctional frame 50 comprises an external contact area 18.2 and a portion of the contact area 18.2 extending into the upper side according to the embodiment of the present invention. Figure 4 The multifunctional frame 50 forms a first plane 60, into which current-carrying components in the form of a T+ bridge 134, a phase bridge 136 and a T-bridge 138 are moved outwards, as will be described below. The multifunctional frame 50 (which is applied with its bottom side 120 with further layers interposed therebetween) is applied to the first plane 60 according to the invention. Figure 3The multifunctional frame 50 forms a second plane 62. Figure 4 According to the schematic diagram of FIG. 5 , there is also the possibility of exchanging the arrangement of the first and second planes 60 , 62 so that the power module 12 is located above the multifunctional frame 50 .

[0039] Figure 5 An exploded schematic view of the components accommodated on the multifunctional frame 50 is shown.

[0040] from Figure 5 It is known that the already mentioned phase bridge 136 is accommodated in the multifunctional frame 50 made of plastic material 132, and furthermore, a T+ bridge 134 and a T-bridge 138 arranged below the T+ bridge in this embodiment variant. The T+ bridge 134 and the T-bridge 138 are separated from each other by an insulating layer 140, which can be made of paper or cardboard. Figure 5 In the arrangement shown in the exploded schematic diagram of , T+ bridge 134 and T- bridge 138 extend one above the other, i.e. in a horizontal arrangement. If the spacing between the two components is selected to be small, the magnetic fields that occur during operation advantageously cancel each other out, so that a low-inductance connection is achieved, which enables short switching times. Figure 5 In the exploded schematic diagram of the embodiment of the present invention, the components can also be arranged vertically, laterally or obliquely relative to each other. It is crucial to maintain a small distance between the two components so that the above-described mutual cancellation of the magnetic fields occurs during operation and a low-inductance connection is achieved. In addition, according to Figure 5 It can be seen from the schematic diagram that the contact strip 124 is located on the end face side of the T+ bridge 134, and the contact strip can be connected to the bottom 144 of the power module 12 for improving heat dissipation, and the cooling surface 106 is located below the bottom. Figure 5 The exploded schematic view of FIG. 5 shows a plurality of press-in pins 76 - 94 , via which various components, shown and not shown, of the multifunctional frame 50 can be electrically contacted.

[0041] It should be pointed out that in Figure 5 The T+ bridge 134 corresponds to the first current-carrying contact surface 68, while the T-bridge 138 shown below the T+ bridge forms the second current-carrying contact surface 70. These designations are used synonymously for the corresponding components.

[0042] from Figure 61 shows a perspective top view of the arrangement of a multifunctional frame 50 which extends above a power module 12 having groups 64 , 66 of semiconductor components 42 arranged on its base 144 . Figure 3 The number of press-fit pins 80, 82, 84, 86, 88, 90, 92, 94 shown in FIG. Figure 6 The number of press-in pins 80, 84, 90, 94 shown in FIG. Figure 6 From the perspective top view of FIG. 1 , it can be seen that the phase bridge 136 has, for example, two opposite fifth press-in pins 84 via which the phase bridge is contacted. Figure 6 The T+ bridge 134 corresponding to the first current-carrying contact surface 68 also has tenth press-in pins 94 arranged opposite each other, via which the T- bridge 138 (second current-carrying contact surface 70) located below the T+ bridge is contacted. Figure 6 As can be seen from the schematic diagram of , openings 72 are formed in the T+ bridge 134 and the phase bridge 136, which openings can have a rectangular shape 74, for example, but can also be implemented in a square or circular shape. The number of openings 72 in the T+ bridge 134 or the phase bridge 136 (both are arranged in the first plane 60) corresponds to the number of semiconductor components 42 that are accommodated individually or in groups in the second plane 62, preferably on the bottom 144 of the power module 12. As can also be seen from the diagram according to Figure 6 As can be seen from the schematic diagram of FIG. 6 , in this embodiment variant, the semiconductor components 42 of the first group 64 are electrically contacted via bonding wires 122 to the contact surfaces 102, which are located on the surface of the semiconductor components 42. The bonding wires 122 extend from the webs 96 of the first contact surfaces 68 in the first plane 60 to the second plane 62, in which the contact surfaces 102 on the upper side of the semiconductor components 42 are located.

[0043] Similar to this electrical interconnection, the second group 66 of semiconductor components 42 are also electrically contacted via bonding wires 122, which extend from connection pads 126 in the first plane 60 into the second plane 62 to the upper side of the contact surface 102 of the semiconductor components 42. Figure 6 As shown, the connection pad 126 is connected to the upper side of the web 96, which separates the individual openings 72 from each other. The connection pad 126 can have a specially treated surface, depending on the Figure 6, on which the bonding wire 122 is more robustly contacted. The opening 72 shown in the T+ bridge 134 or the phase bridge 136, whether it is implemented in the shape of a rectangle 74 or in another geometric shape, can be punched out, for example, in a manner that is simple in terms of production technology. Electrical contact is made between the current-conducting T+ bridge 134 in the first plane 60 and the semiconductor component 42, which is preferably arranged in the second plane 62 on the bottom 144 of the power module 12, on the contact surface 102 of the semiconductor component via the bonding wire 122. The waste heat generated during operation of the semiconductor component 42 can be discharged from the bottom 120 of the power module 12 via the Figure 3 The flat sintered connection 104 shown in FIG. 1 or alternatively via a soldered / adhesive connection 110 is discharged to the cooling surface 106 , so that a continuous heat removal of the semiconductor components 42 is ensured, regardless of whether they are arranged in groups 64 , 66 or individually on the base 144 of the power module 12 .

[0044] From the basis Figure 7 Another embodiment variant of the solution proposed according to the invention can be seen in the schematic diagram of FIG. In this embodiment variant, it is shown that the current-carrying components T+ bridge 134 and phase bridge 136 located in the first plane 60 are electrically contacted with semiconductor components 42 arranged in the second plane 62, preferably on the bottom 144 of the power module 12, via contact strips 124, which have a width 128. Figure 7 The contact strip 124 shown in the perspective top view of FIG. 1 can be connected by a soldered connection on the one hand to the webs 98 of the current-carrying T+ bridge 134 and the phase bridge 138 and on the other hand to the contact surface 102 formed on the top side of the semiconductor component 42 to be contacted. Figure 7 In a variant embodiment, the T-bridge 138 is substantially covered by the T+ bridge 134, which is surrounded by the multifunctional frame 50 and is located in the first plane 60. The T-bridge is also connected to the first circuit carrier 14 or the conductor structure 18, 20A, 20B or 22 of the first circuit carrier via a plurality of contact strips 124, for example. Figure 1 The external contact regions 18 . 2 , 20A. 2 , 20B. 2 or 22 . 2 shown are electrically contacted.

[0045] In accordance with Figure 7In a variant embodiment, openings 72 are also punched into the current-carrying components T+ bridge 134 and phase bridge 136 located in the first plane 60, which openings can be designed, for example, in the shape of a rectangle 74 or in any other geometric shape. The number of openings 72 in the current-carrying components T+ bridge 134 and phase bridge 136 advantageously corresponds to the number of semiconductor components 42 to be electrically contacted via contact strips 124 on contact surface 102, regardless of whether the semiconductor components are arranged in groups 64, 66 or individually distributed on base 144 of power module 12. In accordance with Figure 7 In a variant, a cooling surface 106 is also located on the underside 120 of the power module 12 , which cooling surface can be connected to the bottom 144 of the power module 12 either via the already mentioned sintered connection 104 or, alternatively, via a soldered / adhesive connection 110 .

[0046] Figure 8 The arrangement of a power module bridge 156 having a plurality of power modules 12 next to a battery system 162 is shown.

[0047] Figure 8 1. It is shown that a plurality of power modules 12 are arranged side by side on the upper side of the cooling surface 106. At the end of the power module 12, an external contact area 18.2 is available for electrical contact from the outside. Figure 8 The power module bridge 156 of the perspective schematic diagram in FIG. 1 comprises three power modules 12 arranged side by side. The power modules 12 are accommodated on the upper side of the cooling surface 106 by means of their lower side 120, so that the semiconductor components 42 accommodated on the bottom of the power module 12 are continuously cooled. With the help of an attachment device 168, the power module bridge 156 is connected to a battery system 162, of which only two battery cells 160 are schematically arranged side by side. The attachment device 168 is implemented in such a way that a lateral connection 164 is produced between the power module bridge 156 and the battery system 162. Alternatively, there is the possibility of arranging the power module bridge 156—not shown in the drawing—above or below the battery system 162 with corresponding modifications of the attachment device 168. On the upper side of the power module bridge 156, a cover made of plastic material 132 can be seen, which covers each of the multifunctional frames 50. The press-in pins of the multifunctional frame 50 protrude above the cover made of plastic material 132 in accordance with a respectively selected assembly pattern for electrical contact making.

[0048] The invention is not limited to the embodiments described herein and the aspects emphasized therein. On the contrary, numerous modifications within the scope of a person skilled in the art can be realized within the scope given by the claims.

Claims

1. A power module (12), comprising a first circuit carrier (14) and a first conductor structure (18), at least one second conductor structure (20A, 20B) and a further third conductor structure (22), having a first group (64) of semiconductor components (42) and a second group (66) of semiconductor components (42), the first circuit carrier comprising a carrier substrate (40), the first conductor structure having an external contact region (18.2), the second conductor structure having at least one external contact region (20A.2, 20B.2), the third conductor structure comprising an external contact region (22.2), characterized in that: A group (64, 66) of semiconductor components (42) arranged on a bottom (144) of the power module (12) in a second plane (124) is electrically contacted to a T+ bridge (134) and / or a phase bridge (136) arranged in a first plane (122) of a multifunctional frame (50) via bonding wires (122) and / or at least one contact strip (124).

2. The power module (12) according to claim 1, characterized in that The bonding wire (122) and / or the at least one contact strip (124) extend through an opening (72) from the T+ bridge (134) or the phase bridge (136) to a contact surface (102) of the semiconductor component (42).

3. The power module (12) according to claim 1 and 2, characterized in that Viewed in the Z direction (54), the multifunctional frame (50) is arranged above or below the power module (12).

4. The power module (12) according to claims 1 to 3, characterized in that The openings (72) are provided in the T+ bridge (134) and / or the phase bridge (136) in a number corresponding to the number of semiconductor components (42) to be contacted.

5. The power module (12) according to claims 1 to 4, characterized in that The bonding wire (122) and / or the at least one contact strip (124) are connected to the connection pad (126) of the T+ bridge (134) and / or the T- bridge (138).

6. The power module (12) according to claims 1 to 5, characterized in that The power module (120) is connected to the cooling surface (106) via a planar sintered connection (104) or via a planar soldered / adhesive connection (110).

7. The power module (12) according to claims 1 to 6, characterized in that An arrangement consisting of a multifunctional frame (50) of an equipment and a power module (12) of an equipment is surrounded by a molded mass, which is in electrical contact with one another and has one or more access openings.

8. The power module (12) according to claims 1 to 7, characterized in that The T+ bridge (134) and the T-bridge (138) are accommodated one above the other in a first plane (60) of the multifunctional frame (50) with a minimum spacing therebetween.

9. The power module (12) according to claims 1 to 8, characterized in that The base (144) of the power module (12) forms a second plane (62), in which the semiconductor components (42) are arranged in a manner decoupled from the first plane (60).

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