Power module with circuit carrier

Abstract

The invention relates to a power module having a circuit carrier, which comprises a carrier substrate and an electrically insulating layer, said circuit carrier having a first conductor structure, which has an outer contact region, and at least one second conductor structure, which has an inner contact region, and a further third conductor structure, which has an outer contact region, the second conductor structure has at least one external contact area and the third conductor structure includes at least one external contact area. The semiconductor structure elements are arranged individually or in groups on the circuit carrier. According to the invention, current-conducting components T + and T-bridges are arranged in the multifunctional frame associated with the power module, which components are electrically connected to semiconductor structural elements, which are formed individually or in groups in the power module, by means of at least one solder connection by containing at least one spacer.

Description

Technical Field

[0001] The invention relates to a power module having a circuit carrier, the circuit carrier comprising a carrier substrate and an electrically insulating layer, the circuit carrier having a first conductor structure having an external contact region, at least one second conductor structure having at least one external contact region, and a further third conductor structure, the first conductor structure having an external contact region, the second conductor structure having at least one external contact region, and the third conductor structure comprising at least one external contact region. Background Art

[0002] In the prior art, power modules are additionally molded, which are installed, for example, in a power module bridge. During molding, the power modules are embedded in a solid protective housing, which consists, for example, of plastic (molding mass). The molding mass serves to encase and protect the interior of the power module. However, this encasement of the power module by the molding mass is not particularly resistant to cracks.

[0003] A power module is known from DE 11 2017 004 390 T5, which has the following features: an insulating substrate having a front side, on which a power semiconductor element is fastened; a base plate, which is connected to the back side of the insulating substrate; a housing, which is fastened to the base plate and surrounds the insulating substrate; a cover, which is fastened to the housing and forms a sealed area; and a silicone gel, which serves as a filling element, which fills the entire sealed area and has an internal stress, which serves as a compressive stress.

[0004] DE 10 2014 219 998 B4 discloses a power module, which is used in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier having a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A corresponding first power transistor of the at least two first power transistors is directly arranged on a corresponding first contact surface of the first contact surfaces, and is directly connected to the corresponding first contact surface in an electrically conductive manner via the ground contact surface of the first power transistor. In addition, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface. At least two second power transistors are directly arranged on the second contact surface, and are directly connected to the second contact surface in an electrically conductive manner via the corresponding ground contact surface of the second power transistor. In addition, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on the side of the second power transistor facing away from the surface of the circuit carrier, and the respective second power transistor of the at least two second power transistors is connected to the respective third contact surface of the at least two third contact surfaces in an electrically conductive manner via the further contact surface of the second power transistor. The at least two first contact surfaces and the at least two third contact surfaces are arranged in a longitudinal direction of the power module. The at least two first power transistors are arranged in an alternating manner one after the other on the circuit carrier, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, wherein the second contact surface has at least two contact areas, wherein a corresponding contact area of ​​the at least two contact areas is located next to a corresponding first power transistor of the at least two first power transistors. The at least two first power transistors each have an additional contact surface on the side of the surface of the first power transistor facing away from the circuit carrier, and the corresponding first power transistor of the at least two first power transistors is connected to a corresponding contact area of ​​the at least two contact areas of the second contact surface in an electrically conductive manner via the additional contact surface of the first power transistor, and the corresponding contact area is located next to the corresponding first power transistor. Here, the at least two contact areas of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor device or a control device. In this case, an end section of the flexible foil is electrically contacted at a contact point by heat input, wherein the end section of the flexible foil is mounted at the contact point on an electrical contact that is designed in a protruding manner. The end section of the flexible foil is designed as a wave-like impact portion, in particular as a deflection portion. Summary of the invention

[0006] According to the invention, a power module is provided, which has a circuit carrier, which includes a carrier substrate and an electrically insulating layer, wherein the circuit carrier includes a first conductor structure and at least one second conductor structure and a further third conductor structure, the first conductor structure having an external contact region, the second conductor structure having at least one external contact region, the third conductor structure having at least one external contact region, wherein the semiconductor components are arranged individually or in groups. Contact surfaces are arranged in a multifunctional frame assigned to the power module, which contact surfaces are electrically connected to the semiconductor components formed individually or in groups in the power module by at least one solder connection, with the inclusion of at least one spacer.

[0007] In a further advantageous embodiment of the power module proposed according to the invention, the semiconductor components are arranged individually or in groups on the bottom or on the bottom surface of the power module.

[0008] The power module proposed according to the invention is realized in such a way that the first spacer is arranged in the region of the joint between the bottom side of the multifunctional frame and the top side of the power module. By means of at least one spacer arranged in at least one welded connection, component differences or production differences that arise when joining the components in question can be compensated. In another advantageous configuration variant of the power module proposed according to the invention, the current-conducting components in the multifunctional frame are implemented one above the other or next to one another, thereby advantageously achieving a low-inductance connection, the current-conducting components being, for example, a T+ bridge and / or a T- bridge and / or a phase bridge.

[0009] In another advantageous embodiment of the power module proposed according to the invention, the first integrally bonded connection is formed in an opening on the bottom side of the multifunctional frame. This results in relatively simple accessibility to the at least one integrally bonded welded connection.

[0010] In a further advantageous embodiment of the power module proposed according to the invention, the second spacer is arranged directly on the contact surface of the semiconductor component.

[0011] In the power module provided according to the present invention, the second solder connection is located between the first spacer and the second spacer.

[0012] Furthermore, the power module proposed according to the present invention is characterized in that the first and second solder connections contain a first or second solder layer.

[0013] In a further advantageous possible embodiment of the power module proposed according to the invention, the power module is connected to the cooling surface either via a sintered layer or via a soldered / adhesive connection, preferably in a planar manner.

[0014] Finally, it is provided that the power module proposed according to the invention is realized in such a way that the semiconductor components and the second spacer connected to the semiconductor components via the contact surface are surrounded by a molding mass. The molding mass, which in particular surrounds the semiconductor components, can effectively improve the protection of the semiconductor components from environmental influences, such as temperature, vibrations or wetting with liquids and the like.

[0015] Advantages of the present invention

[0016] In the power module proposed according to the present invention, the multifunctional frame and the power module are decoupled from each other and are connected to electrical contacts via a material-locked connection in the Z direction, and the material-locked connection is preferably constructed as a welded connection. Advantageously, the contact surface for conducting the current extends in the multifunctional frame, which can be arranged above or below the power module, and the semiconductor components arranged individually or in groups on the bottom surface of the power module are located in the power module. The power module is in turn heat-dissipated through a cooling surface, wherein the cooling surface, which is preferably constructed in a planar manner and performs heat dissipation, is either connected to the lower side of the power module in a planar manner via a sintered connection, a welded connection or an adhesive connection. In the Z direction, the multifunctional frame can be arranged not only above the power module, but also below the power module; accordingly, the position of the cooling surface is produced in such a way that cooling is always performed at the place where the maximum heat loss is generated, that is, at the bottom of the power module, that is, the cooling surface is thermally attached.

[0017] By means of the material connection proposed according to the invention between the multifunctional frame and the semiconductor components accommodated on the bottom of the power module, an effective and robust electrical connection between the multifunctional frame, the contact surfaces extending there and the semiconductor components themselves, such as MOSFETs, IGBTs or diodes or other electronic components, can be achieved. Preferably, spacers are arranged in the material connection, which is preferably implemented as a welded connection, and are configured either angularly, circularly or in a sheet-like manner. With the aid of the spacers, height differences can be compensated, and the spacers also provide an enlarged surface, so that on the one hand, an electrical connection that can carry current can be constructed, but which can be implemented extremely small in terms of its height.

[0018] The solution proposed according to the invention makes it possible to achieve improved cooling, since greater spacing between semiconductor components can be achieved. This makes it possible to move the current-carrying paths, such as T+ and / or T-bridges and phase bridges, from the power module into the multifunctional frame and to implement them there in a low-inductance manner, one above the other or next to one another. This results in the advantage that the magnetic fields formed in the bridges during current conduction cancel each other out and no parasitic currents occur. The low-inductance connection achieved in this way can significantly reduce switching losses.

[0019] The decoupling of the first and second planes in the power module and the multifunctional frame results in a compact construction of the power module proposed according to the invention. In addition, the production can be significantly improved by the selected arrangement of two functional planes one above the other, namely the first plane in which the semiconductor elements are arranged and the second plane in which the current is conducted. More favorable tolerances can be achieved for more precise further processing, and the service life of the power module is increased because the complexity is reduced. In particular, when contacting the semiconductor components in the first plane and the current-conducting components in the second plane, i.e. in the multifunctional frame, a robust electrical contact-making possibility of the components mentioned is achieved. In addition, the construction scheme of the press-in pins is technically proven and can be robustly presented in large-scale production.

[0020] The solution proposed according to the invention advantageously allows the external contact region to be moved from the power module into a multifunctional frame which is arranged offset relative to the power module in the Z direction. Furthermore, according to the solution proposed according to the invention, the underside of the power module and the upper side of the cooling surface can advantageously be formed either by a planar sintered connection, by a planar welded connection or by a planar adhesive connection. All variants offer the advantage of planar contacting, whereby waste heat generated during operation of the semiconductor components of the power module can be reliably discharged and temperature overloading of the power module can be avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

[0022] The accompanying drawings show:

[0023] Figure 1 shows a plan view of a first circuit carrier of a power module, which consists of a carrier substrate and a possible arrangement of semiconductor components.

[0024] Figure 2 A plan view of a power module is shown, which has a cooling surface and a layout surface separated from one another, which has a region for the lateral arrangement of press-in pins,

[0025] Figure 3 shows an assembly consisting of a power module accommodated on a cooling surface and a multifunctional frame arranged above the power module in the Z direction,

[0026] Figure 4 An exploded schematic diagram showing the components housed in the multifunctional frame,

[0027] Figure 5 Show according to Figure 3 A top view of the components,

[0028] Figure 6 a detailed schematic representation on an enlarged scale showing the electrical connection between the multifunctional frame on the one hand and the semiconductor components on the base of the power module on the other hand,

[0029] Figure 7 shows an enlarged view of the welded connection,

[0030] Figure 8 A perspective partial section view of a multifunctional frame is shown,

[0031] Fig. 9 A side view showing the joined arrangement of components in the multifunctional frame and in the power module,

[0032] Fig.10The vertical guides of the T+ bridge and the T- bridge are shown. DETAILED DESCRIPTION

[0033] In the following description of embodiments of the invention, identical or similar elements are denoted by the same reference numerals, wherein a repeated description of these elements is omitted in individual cases. The figures merely schematically illustrate the subject matter of the invention.

[0034] Figure 1 A plan view of a power module 12 , in particular a plan view of a circuit carrier 14 of the power module, is shown.

[0035] From the basis Figure 1 It can be seen from the top view of that the carrier substrate 40 of the circuit carrier 14 is provided with a plurality of conductor structures 18, 20A, 20B, 22. The circuit carrier 14 extends in the X,Y plane 10, wherein the circuit carrier 14 is provided with an electrically insulating layer 16. A first conductor structure 18 is located on the electrically insulating layer in a manner separated from one another by channel-shaped interruptions, the first conductor structure having an external contact region 18.2. In addition, second conductor structures 20A, 20B are located on the circuit carrier 14 in a manner symmetrical to one another with respect to the central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact region 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the circuit carrier 14 or to the electrically insulating layer 16 of the circuit carrier, the third conductor structure having at least one external contact region 22.2.

[0036] The conductor structures 18, 20A, 20B, 22 mentioned are electrically separated from one another and are applied to the circuit carrier 14 in a substantially symmetrical manner with respect to the central longitudinal axis 24. The active surface is indicated by the position 36, and the layout surface for conducting the current flowing around the active surface is indicated by the reference numeral 38. Advantageously, AMB (Active Metal Brazing, active metal brazing, (OFC (oxygen-free copper) / Si3N4 / OFC)) is selected as the carrier substrate 40 of the circuit carrier 14.

[0037] From the basis Figure 2 A top view of the power module 12 can be seen in the schematic diagram of FIG. 1 , wherein semiconductor components are arranged on the active surface 36 , such as transistors, MOSFETs, IGBTs, diodes or other semiconductor components that can be used as semiconductor switches. Figure 2It can be seen that on the one hand, a first group 64 of semiconductor components 42 are accommodated on the active surface 36. The individual semiconductor components 42 can be designed as MOSFETs, for example, and have control attachment terminals 34 on their outer sides, via which control attachment terminals the individual semiconductor components 42 of the first group 64 of semiconductor components 42 can be controlled, not shown in more detail. Analogously to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, and control attachment terminals 34 are respectively constructed on the outer regions of the second group of semiconductor components. The arrangement of the semiconductor components 42 in groups 64, 66 is not necessarily necessary - these semiconductor components can also be arranged individually, i.e. not in groups, depending on the scale. The semiconductor components 42 of the second group 66 of semiconductor components can be controlled from the outside via the control attachment terminals 34, but this is not necessary according to the embodiment of the present invention. Figure 2 Not shown in more detail in the schematic diagram of FIG.

[0038] In addition, according to Figure 2 It can be seen from the top view that Figure 2 In the X,Y plane 10 shown, on the longitudinal side of the circuit carrier 14 in the form of a carrier substrate 40, there are regions in which the press-in pins 76-94 project to the extent that the press-in pins 76-94 project to the longitudinal side of the circuit carrier 14 in the form of a carrier substrate 40. Figure 2 In particular, this relates to the first and second press-in pins 76, 78 as well as the third and fourth press-in pins 80, 82 as well as the fifth and sixth press-in pins 84, 86 arranged opposite one another. In the region of the opposite end faces of the circuit carrier 14, the seventh and eighth press-in pins 88, 90 as well as the ninth and tenth press-in pins 92, 94 are arranged. Figure 3 and Figure 4 The spatial arrangement of the press-in pins 76 , 78 , 80 , 82 , 84 , 86 , 88 , 90 , 92 , 94 can be seen in more detail in the schematic diagram of .

[0039] From the basis Figure 3 It can be seen from the side view that the power module 12 shown here from the outside is accommodated with its bottom side 120 on the cooling surface 106. When viewed in the Z direction 54, the multifunctional frame 50 is located above the power module 12. Figure 3 On the upper side of the multifunctional frame 50 shown from the side in FIG. 1 , individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94—here in the drawing plane—protrude upward in the vertical direction. Via these press-in pins 76-94, components arranged in the multifunctional frame 50 or in the power module 12 arranged below it can be electrically contacted in a robust and simple manner. In addition, from the Figure 3It can be seen from the schematic diagram of FIG. 5 that the multifunctional frame 50 forms a first plane 60, and the power modules 12 arranged below the multifunctional frame in this case form a second plane 62. Figure 3 In a variation of the schematic diagram of FIG. 5 , the multifunctional frame 50 may be arranged above the power module 12 as viewed in the Z direction 54 .

[0040] From the basis Figure 4 An exploded schematic diagram of the components included in the multifunctional frame 50 can be seen in the schematic diagram of FIG.

[0041] Figure 4 It is shown that the phase bridge 136 can be electrically contacted via the seventh and eighth press-fit pins 88, 90. In addition, Figure 4 It is shown that in this embodiment variant, the T+ bridge 134 (first contact surface 68) and the second T-bridge 138 (second contact surface 70) are arranged one above the other. There is an insulating layer 140 between the T+ bridge and the second T-bridge, which can be made of paper, cardboard or the like. In addition, the T+ bridge 134 has a contact strip 142, which leads to a cooling attachment end 150, as will be described below. Preferably, the two components T+ bridge 134 and T-bridge 138 are arranged one above the other or side by side with a minimum spacing, so that the magnetic fields that appear when current flows cancel each other out. The smaller the spacing between the T+ bridge 134 and the T-bridge 138 can be kept, the more complete the cancellation of the magnetic fields can be achieved. The press-in pins 76, 78, 80, 84 are used for electrical contact connection or signal transmission of semiconductor components and / or contact connection of semiconductor components 42 arranged in the power module 12 located below the press-in pins.

[0042] From the basis Figure 5 As can be seen from the schematic diagram of FIG, the T+ bridge 134 (first contact surface 68) is accommodated above the power module 12 in the multifunctional frame 50. The press-in pins 76, 78, 80, 84 surrounding the T+ bridge 134 are installed in such a way that they electrically contact the semiconductor components 42 arranged individually or in groups 64, 66 below the T+ bridge 134, preferably on the bottom 96 of the power module 12. The semiconductor components 42 arranged on the bottom 96 of the power module 12 are, for example, semiconductor components 42 used as semiconductor switches, such as MOSFETs, IGBTs, diodes.

[0043] For example, according to Figure 5 The T-bridge 138 (second contact surface 70) shown in the top view of the component is connected via the press-in pins 88, 90 that are directly connected to the T-bridge. Figure 5In the schematic diagram in FIG. 1 , a ninth and a tenth press-in pin 92, 94 are provided in the region of the T-bridge 138 (second contact surface 70), through which the semiconductor components 42 arranged individually or in groups 64, 66 below the T-bridge 138 (second contact surface 70) are electrically contacted. In addition, Figure 5 The contact strip 142 is shown pointing downward from the T+ bridge 134, according to Figure 8 , the contact strips constitute cooling attachment ends 150, 152. Figure 5 In the embodiment of the present invention, compensation openings 148 are located in the phase bridge 136 and in the T-bridge 138 , through which compensation openings excess solder can flow out or run off during the soldering process, depending on the soldering process being carried out.

[0044] From the basis Figure 6 In the schematic diagram of FIG. 1 , an upper and lower stacked assembly consisting of the multifunctional frame 50 , the power module 12 and the cooling surface 106 can be seen in an enlarged scale.

[0045] Figure 6 It is shown that in this schematic diagram reproduced on an enlarged scale, a semiconductor component 42, which can be, for example, a MOSFET or another transistor, is accommodated on the bottom 96 of the power module 12. The bottom 120 of the power module is connected to a cooling surface 106 either via a planar sintered connection 104 or via a planar soldered / adhesive connection 110. This arrangement possibility provides for rapid heat removal of the semiconductor component 42 on the bottom 96 of the power module 12, since the waste heat generated during operation can be quickly transported away, so that the semiconductor component 42 is not exposed to excessive temperatures.

[0046] In addition, according to Figure 6 From the schematic diagram, we know that Figure 6 The electrical connection of the T+ bridge 134 and the T- bridge 138 in the multifunctional frame 50, which is not shown in more detail in the figure, is realized by means of a first solder connection 128 and a second solder connection 130. The two solder connections 128, 130 include a first and a second solder layer 122, 124. In addition, the first spacer 100 and the second spacer 126 are integrated into the solder connections 128, 130, which are of sheet-like design. Alternatively, there is also the possibility of saving one of the spacers 100, 126; in this case, the second solder connection 130 can be omitted.

[0047] The use of first spacers 100 or second spacers 126 advantageously allows for compensation of component tolerances or tolerances arising for production reasons when joining multifunctional frame 50 to power module 12. As seen in Z direction 54, current-carrying components of multifunctional frame 50 and semiconductor components 42 of power module 12 are connected to one another via solder connections 128, 130.

[0048] Therefore, according to Figure 6 As can be seen from the schematic diagram of FIG, a first solder connection 128 is constructed in the opening 112 of the multifunctional frame 50, which first solder connection preferably includes a first solder layer 122. The first solder connection 128 connects the multifunctional frame or one of the T+ bridge 134 and the T-bridge 138 to the first spacer 100. The second solder connection 130 includes the second solder layer 124 and extends between the first spacer 100 and the upper side of the second spacer 126, which is constructed in a sheet-like manner. The second spacer is in turn located on the contact surface 102 on the upper side of the semiconductor component 42.

[0049] By using first and second spacers 100, 126, which can be designed in any geometry and at any height, component tolerances or production tolerances occurring during joining can be easily compensated, so that the overall height of the assembly consisting of multifunctional frame 50, power module 12 and cooling surface 106 does not increase and can remain essentially constant in the case of an intermediate sintered connection 104 or a soldered / adhesive connection 110. In addition, spacers 100, 126 prevent excessive heat input into semiconductor components 42 during the joining process, i.e., in the present case during soldering.

[0050] Figure 7 An enlarged schematic view of the welded connections 128 , 130 is shown.

[0051] The first solder connection 128 comprises a first spacer 100 and a further second spacer 126, which is of sheet-like design. The first spacer 100 is fastened to the underside of the phase bridge 136 by means of a first solder layer 122 and is joined to the second spacer 126 in a materially bonded manner by means of a second solder layer 124. The second spacer is in turn fastened to the contact surface 102 of the semiconductor component 42. The arrangement of the spacers 100, 126 can also be different according to Figure 7 In addition to compensating for tolerances, the spacers 100 , 126 serve to accommodate and homogenize the energy input acting on the semiconductor components 42 during the cohesive joining process (in the present case during welding).

[0052] in addition, Figure 71 shows a second solder connection 130. The second solder connection comprises a first solder layer 122, by means of which the first spacer 100 is joined to the underside of the phase bridge 136. The first spacer 100 is located on the bottom 96 of the power module 12, so that the heat of the phase bridge 136 can be dissipated to the cooling surface 106 via the bottom surface 96 via the sintering connection 104 or the soldering connection / adhesive connection 110. The same applies to the first spacer 100 located on the bottom 96 of the power module 12. Figure 4 A further cooling attachment terminal 150 in the drawing plane of FIG. 1 is provided via which the contact strip 142 of the T+ bridge 134 is connected in the same manner to the bottom 96 of the power module 12 for heat dissipation.

[0053] From the basis Figure 8 It can be seen from the perspective partial sectional view that not only the phase bridge 1326, but also the T+ bridge 134 (first contact surface 68) and the T- bridge 138 (second contact surface 70) arranged one above the other have compensation openings 148, which are separated by the insulating layer 140. For example, excess solder of the first solder layer 122 can escape through these compensation openings, so that no stress is formed in the soldered connections 128, 130 or the cooling attachments 150, 152. In addition, Figure 8 The contact strip 142 is shown starting from the T+ bridge 134 (first contact surface 68), and is connected to the bottom 96 of the power module 12 and the cooling surface 106 connected to the bottom via the cooling attachment end 150 for heat dissipation. Figure 8 The solder connections 128, 130, which are only shown in simplified form in the figure, are located between the phase bridge 136 and the semiconductor component 42 or between the T-bridge 138 and the semiconductor component 42. The insulating layer 140 can be a layer of a few tenths of a millimeter thick, which is made of paper or cardboard. The smaller the distance between the T+ bridge 134 and the T-bridge 138 can be kept, the more complete the cancellation of magnetic fields oriented in opposite directions can be achieved, so that a low-inductance connection is produced, which allows short switching times of the semiconductor component 42.

[0054] Fig. 9 A side view of the joined arrangement of components of the multifunctional frame 50 and the power module 12 is shown.

[0055] Fig. 9 The bottom 96 of the power module 12 is shown between the bottom side of the phase bridge 136 and the power module 12 according to Figure 7 The first welding connection 128 is connected in the order of. Fig. 9The side view of FIG. 1 shows a T+ bridge 134 (first contact surface 68) which is insulated by an insulating layer 140 from a T- bridge 138 (second contact surface 70) located below the insulating layer. The spacing between the T+ bridge 134 and the T- bridge 138 is minimized so that when current is conducted, the magnetic fields present in the T+ bridge and the T- bridge largely cancel each other and a low-inductance connection is achieved. Fig. 9 The second solder connection 130 extends between the underside of the T-bridge 138 and the bottom 96 of the power module 12. Figure 7 As shown in an enlarged scale in FIG. Fig. 9 The cooling attachment ends 150, 152 that are consecutive to each other in the drawing plane of Fig. 9 In addition, according to Fig. 9 The side view of the phase bridge 136 is not only between the lower side and the bottom surface 96, but also between the bottom surface and Fig. 9 The path of the bonding wire 146 is shown between the lower sides of the T-bridge 138 in the right part of FIG. Fig. 9 The underside of the power module 12 of the schematic diagram in FIG. 1 is joined to the cooling surface 106 in a planar manner via the sintered layer 104 or the soldered / adhesive bond 110, so that the heat generated during operation of the semiconductor components 42 arranged on the bottom 96 of the power module 12 can be easily dissipated and overtemperature stresses of these components can be eliminated. Above the first solder connection 128 and above the second solder connection 130, a compensating opening 148 is embedded in the phase bridge 136 and also in the T-bridge 138, which allows excess solder material to escape, so that the solder connections 128, 130 can be designed to be essentially stress-free.

[0056] From the basis Fig.10 A variant embodiment can be seen in the schematic diagram of FIG. 1 , in which a vertical conduction of the current-conducting components is realized, in particular the T+ bridge 134 and the T-bridge 138 .

[0057] As according to Fig.10 As can be seen from the view of FIG. 1 , the semiconductor structure 42 is electrically contacted via the second spacer 126 with a current-carrying component extending above the second spacer in the vertical guide 156, the current-carrying component being in particular the T+ bridge 134 and extending parallel to the T+ bridge to the vertical guide 156 according to FIG. Fig.10 T-bridge 138 in the drawing plane. In this case, Figure 8 and 9 Different, for example, the vertical position of the T+ bridge 134 and the T-bridge 138 relative to each other is generated, wherein in the construction according to Fig.10In the case of vertical guides 156 , a minimum spacing between the mentioned components is also ensured, so that when current is conducted in T+ bridge 134 or in T− bridge 138 , the magnetic fields that are subsequently generated cancel each other out and a low-inductance connection is produced. Fig.10 The assembly comprises a power module 12, on the base 96 of which the semiconductor components 42 are arranged. The power module 12 is in turn connected to a cooling surface 106 in a heat-conducting manner via a sintered layer 104 or alternatively via a planar soldered / adhesive bond 110 for dissipating operating heat.

[0058] The invention is not limited to the embodiments described herein and the aspects emphasized therein. On the contrary, numerous modifications within the scope of a person skilled in the art can be realized within the scope given by the claims.

Claims

1. A power module (12) comprising a circuit carrier (14) comprising a carrier substrate (40) and an electrically insulating layer (16), wherein: The circuit carrier (14) comprises a first conductor structure (18) having an external contact region (18.2) and at least one second conductor structure (20A, 20B) and a further third conductor structure (22), the first conductor structure having at least one external contact region (20A.2, 20B.2), the third conductor structure comprising at least one external contact region (22.2), the power module having semiconductor components (42) which are arranged individually or in groups (64, 66), characterised in that contact surfaces (68, 70) arranged in a multifunctional frame (50) associated with the power module (12) are electrically connected to the semiconductor components (42) which are designed individually or in groups (64, 66) in the power module (12) by means of a solder connection (128, 130) with the inclusion of at least one spacer (100, 126).

2. The power module (12) according to claim 1, characterized in that The semiconductor components (42) are arranged individually or in groups (64, 66) on a base (96) of the power module (12).

3. The power module (12) according to claim 1 to 2, characterized in that: The first spacer (100) is arranged in the region of a joint (98) between a lower side (120) of the multifunctional frame (50) and an upper side of the power module (12).

4. The power module (12) according to claim 3, characterized in that: The first welded connection (128) is located in an opening (112) on the underside (120) of the multifunctional frame (50).

5. The power module (12) according to claim 1 and 2, characterized in that The second spacer (126) is arranged on a contact surface (102) of the semiconductor component (42).

6. The power module (12) according to claim 5, characterized in that The second welded connection (130) is implemented between the first spacer (100) and the second spacer (126).

7. The power module (12) according to claims 1 to 6, characterized in that The solder connection (128, 130) has first and second solder layers (122, 124).

8. The power module (12) according to claims 1 to 7, characterized in that The power module (12) is connected to the cooling surface (106) either via a sintered layer (104) or via a soldered / adhesive connection (110).

9. The power module (12) according to claims 1 to 8, characterized in that The semiconductor component (42) and a second spacer (126) connected to the semiconductor component via a contact surface (102) are surrounded by a molding mass (108).

10. The power module (12) according to claims 1 to 9, characterized in that Viewed in the Z direction (54), the multifunctional frame (50) is arranged above or below the power module (12).

11. The power module (12) according to claims 1 to 10, characterized in that In the multifunctional frame (50), current-conducting components, in particular T+ bridges (134) and T- bridges (138), are arranged one above the other or next to one another in such a way that a low-inductance connection is formed.

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