Semiconductor laser element with piezoelectric polarization regulation and control layer

Abstract

The invention provides a semiconductor laser element provided with a piezoelectric polarization regulation and control layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the piezoelectric polarization regulation and control layer is arranged between the lower limiting layer and the lower waveguide layer; the piezoelectric polarization regulation and control layer has a deformation potential distribution characteristic and a piezoelectric polarization coefficient distribution characteristic. According to the invention, the laser can be induced to generate piezoelectric polarization regulation and control under the action of an electric field of current injection, spontaneous polarization and piezoelectric polarization of the active layer are reconciled, the quantum confinement Stark effect is reduced, the valence band order of a laser element is reduced, the injection efficiency and transport of holes are improved, and ultrafast transport of carriers is realized. And stimulated radiation and electric lasing gain of the laser element are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element provided with a piezoelectric polarization control layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] (1) The lattice mismatch and large strain of the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confined Stark effect. The step difference of the laser valence band increases, the hole transport in the quantum well becomes more difficult, the carrier injection is uneven, and the gain is uneven, which limits the improvement of the laser lasing gain.

[0010] (2) The laser uses a large current, and the high current density generates a lot of heat. In addition, the device has poor heat dissipation and temperature characteristics, which will aggravate the thermal mismatch between the semiconductor epitaxial layers, leading to problems such as increased threshold current, decreased output optical power and slope efficiency. Summary of the invention

[0011] In order to solve one of the above technical problems, the present invention provides a semiconductor laser element provided with a piezoelectric polarization control layer.

[0012] An embodiment of the present invention provides a semiconductor laser element provided with a piezoelectric polarization control layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, a piezoelectric polarization control layer is arranged between the lower confinement layer and the lower waveguide layer, the piezoelectric polarization control layer comprises a first piezoelectric polarization control layer, a second piezoelectric polarization control layer and a third piezoelectric polarization control layer arranged in sequence from bottom to top, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer all having deformation potential distribution characteristics and piezoelectric polarization coefficient distribution characteristics;

[0013] The deformation potential of the first piezoelectric polarization control layer is distributed as a linear function;

[0014] The deformation potential of the second piezoelectric polarization control layer is y1=A+B*x1 2 +C*sinx1 curve distribution;

[0015] The deformation potential of the third piezoelectric polarization control layer is y2=D+E*e x2 / x2 2 The second quadrant curve distribution;

[0016] The piezoelectric polarization coefficient of the first piezoelectric polarization regulating layer is distributed in a linear function;

[0017] The piezoelectric polarization coefficient of the second piezoelectric polarization control layer is y3=Fx1 2 +Gx1+H curve distribution, where F < 0;

[0018] The piezoelectric polarization coefficient of the third piezoelectric polarization control layer is y4=H+I+J*e x2 / x2 third quadrant curve distribution;

[0019] Wherein, x1 is the depth from the second piezoelectric polarization control layer to the third piezoelectric polarization control layer, and x2 is the depth from the third piezoelectric polarization control layer to the lower waveguide layer.

[0020] Preferably, the deformation potential of the first piezoelectric polarization control layer is a, the deformation potential of the second piezoelectric polarization control layer is b, and the deformation potential of the third piezoelectric polarization control layer is c, wherein 5eV≤c≤b≤a≤10eV.

[0021] Preferably, the piezoelectric polarization coefficient of the first piezoelectric polarization regulation layer is d, the piezoelectric polarization coefficient of the second piezoelectric polarization regulation layer is e, and the piezoelectric polarization coefficient of the third piezoelectric polarization regulation layer is f, wherein 0.5≤d≤e≤f≤3.

[0022] Preferably, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have a thermal expansion coefficient distribution characteristic;

[0023] The thermal expansion coefficient of the first piezoelectric polarization control layer is distributed in a linear function;

[0024] The thermal expansion coefficient of the second piezoelectric polarization control layer is y5=K+L*e -x1 +M*e x1 Curve distribution;

[0025] The thermal expansion coefficient of the third piezoelectric polarization control layer is y6=N+P*x2 2 e x2 Curve distribution;

[0026] The thermal expansion coefficient of the first piezoelectric polarization control layer is g, the thermal expansion coefficient of the second piezoelectric polarization control layer is h, and the thermal expansion coefficient of the third piezoelectric polarization control layer is i, wherein 2(10 -6 / K)≤i≤h≤g≤8(10 -6 / K).

[0027] Preferably, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have saturated electron drift velocity distribution characteristics;

[0028] The saturated electron drift rate of the first piezoelectric polarization control layer is distributed in a linear function;

[0029] The saturated electron drift velocity of the second piezoelectric polarization control layer is y7=Qx1 2 +Rx1+S curve distribution, where Q < 0;

[0030] The saturated electron drift velocity of the third piezoelectric polarization control layer is y8=T+U*(e x2 +e -x2 ) / (e x2 -e -x2 ) The third quadrant curve distribution;

[0031] The saturated electron drift velocity of the first piezoelectric polarization control layer is j, the saturated electron drift velocity of the second piezoelectric polarization control layer is k, and the saturated electron drift velocity of the third piezoelectric polarization control layer is l, wherein 1E7≤j≤k≤l≤5E7 (cm / s).

[0032] Preferably, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have an In / C element ratio distribution characteristic;

[0033] The In / C element ratio of the first piezoelectric polarization control layer is distributed in a linear function;

[0034] The In / C element ratio of the second piezoelectric polarization control layer is y9=Vx1 2 +Wx1+Z curve distribution, where V < 0;

[0035] The In / C element ratio of the third piezoelectric polarization control layer is y 10 =A2+B2*(e x2 +e -x2 ) / (e x2 -e -x2 )The third quadrant curve distribution.

[0036] Preferably, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have an In / H element ratio distribution characteristic;

[0037] The In / H element ratio of the first piezoelectric polarization control layer is distributed in a linear function;

[0038] The In / H element ratio of the second piezoelectric polarization control layer is y 11 =D2*x1 2 +E2*x1+F2 curve distribution, where D2<0;

[0039] The In / H element ratio of the third piezoelectric polarization control layer is y 12 =G2+H2*(e x2 +e -x2 ) / (e x2 -e -x2 )The third quadrant curve distribution.

[0040] Preferably, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have an In / O element ratio distribution characteristic;

[0041] The In / O element ratio of the first piezoelectric polarization control layer is distributed in a linear function;

[0042] The In / O element ratio of the second piezoelectric polarization control layer is y 13 =I2x1 2 +J2*x1+K2 curve distribution, where I2<0;

[0043] The In / O element ratio of the third piezoelectric polarization control layer is y 14 =L2+M2*e x2 / x2 third quadrant curve distribution.

[0044] Preferably, the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4, and Ca2NCl.

[0045] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN , with a thickness of 10 angstroms to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0046] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0047] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0048] The beneficial effects of the present invention are as follows: The present invention provides a piezoelectric polarization control layer with a multilayer structure between the lower confinement layer and the lower waveguide layer of the semiconductor laser element provided with the piezoelectric polarization control layer, and defines the deformation potential distribution characteristics and the piezoelectric polarization coefficient distribution characteristics of each piezoelectric polarization control layer. The specific deformation potential distribution and the piezoelectric polarization coefficient distribution of the piezoelectric polarization control layer induce the laser to produce piezoelectric polarization control under the action of the electric field injected by the current, reconcile the spontaneous polarization and the piezoelectric polarization of the active layer, reduce the quantum confinement Stark effect, reduce the valence band order of the laser element, improve the injection efficiency and transport of holes, realize the ultrafast transport of carriers, and improve the stimulated radiation and electro-lasing gain of the laser element. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0050] Figure 1 A schematic structural diagram of a semiconductor laser element provided with a piezoelectric polarization control layer according to an embodiment of the present invention;

[0051] Figure 2 This is a SIMS secondary ion mass spectrum of the semiconductor laser element provided with a piezoelectric polarization control layer according to an embodiment of the present invention.

[0052] Reference numerals:

[0053] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer, 106, piezoelectric polarization control layer;

[0054] 106a, a first piezoelectric polarization control layer, 106b, a second piezoelectric polarization control layer, and 106c, a third piezoelectric polarization control layer. DETAILED DESCRIPTION

[0055] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0056] like Figure 1 and Figure 2 As shown, this embodiment provides a semiconductor laser element provided with a piezoelectric polarization control layer, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 arranged in sequence from bottom to top. A piezoelectric polarization control layer 106 is also arranged in the semiconductor laser element provided with a piezoelectric polarization control layer.

[0057] Specifically, in this embodiment, the semiconductor laser element provided with a piezoelectric polarization control layer is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 from bottom to top. The piezoelectric polarization control layer 106 is provided between the lower confinement layer 101 and the lower waveguide layer 102. The piezoelectric polarization control layer 106 is a multi-layer structure, specifically a three-layer structure, including a first piezoelectric polarization control layer 106a, a second piezoelectric polarization control layer 106b and a third piezoelectric polarization control layer 106c. Among them, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c are provided in sequence from bottom to top between the lower confinement layer 101 and the lower waveguide layer 102.

[0058] In this embodiment, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c all have specific deformation potential distribution characteristics and piezoelectric polarization coefficient distribution characteristics, which are specifically manifested as follows:

[0059] Deformation potential distribution:

[0060] The deformation potential of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0061] The deformation potential of the second piezoelectric polarization control layer 106b is y1=A+B*x1 2 +C*sinx1 curve distribution;

[0062] The deformation potential of the third piezoelectric polarization control layer 106c is y2=D+E*e x2 / x2 2 The second quadrant curve distribution;

[0063] Wherein, x1 is the depth from the second piezoelectric polarization control layer 106 b to the third piezoelectric polarization control layer 106 c , and x2 is the depth from the third piezoelectric polarization control layer 106 c to the lower waveguide layer 102 .

[0064] Piezoelectric polarization coefficient distribution:

[0065] The piezoelectric polarization coefficient of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0066] The piezoelectric polarization coefficient of the second piezoelectric polarization control layer 106b is y3=Fx1 2 +Gx1+H curve distribution;

[0067] The piezoelectric polarization coefficient of the third piezoelectric polarization control layer 106c is y4=H+I+J*e x2 / x2 third quadrant curve distribution.

[0068] In this embodiment, a piezoelectric polarization control layer 106 with a multilayer structure is arranged between the lower confinement layer 101 and the lower waveguide layer 102 of the semiconductor laser element provided with the piezoelectric polarization control layer, and the deformation potential distribution characteristics and the piezoelectric polarization coefficient distribution characteristics of each layer of the piezoelectric polarization control layer 106 are defined. The specific deformation potential distribution and the piezoelectric polarization coefficient distribution of the piezoelectric polarization control layer 106 induce the laser to generate piezoelectric polarization control under the action of the electric field injected by the current, reconcile the spontaneous polarization and the piezoelectric polarization of the active layer, reduce the quantum confinement Stark effect, reduce the valence band order of the laser element, improve the injection efficiency and transport of holes, realize the ultrafast transport of carriers, and improve the stimulated radiation and electro-lasing gain of the laser element.

[0069] In some optional embodiments, the deformation potentials in the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b, and the third piezoelectric polarization control layer 106c also have the following relationship:

[0070] The deformation potential of the first piezoelectric polarization control layer 106a is a, the deformation potential of the second piezoelectric polarization control layer 106b is b, and the deformation potential of the third piezoelectric polarization control layer 106c is c, wherein 5eV≤c≤b≤a≤10eV.

[0071] In some optional embodiments, the piezoelectric polarization coefficients in the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b, and the third piezoelectric polarization control layer 106c also have the following relationship:

[0072] The piezoelectric polarization coefficient of the first piezoelectric polarization control layer 106a is d, the piezoelectric polarization coefficient of the second piezoelectric polarization control layer 106b is e, and the piezoelectric polarization coefficient of the third piezoelectric polarization control layer 106c is f, wherein 0.5≤d≤e≤f≤3.

[0073] In some optional embodiments, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c also have a thermal expansion coefficient distribution characteristic, which is specifically manifested as follows:

[0074] The thermal expansion coefficient of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0075] The thermal expansion coefficient of the second piezoelectric polarization control layer 106b is y5=K+L*e -x1 +M*e x1 Curve distribution;

[0076] The thermal expansion coefficient of the third piezoelectric polarization control layer 106c is y6=N+P*x2 2 e x2 Curve distribution;

[0077] The thermal expansion coefficients of the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b, and the third piezoelectric polarization control layer 106c also have the following relationship:

[0078] The thermal expansion coefficient of the first piezoelectric polarization control layer 106a is g, the thermal expansion coefficient of the second piezoelectric polarization control layer 106b is h, and the thermal expansion coefficient of the third piezoelectric polarization control layer 106c is i, where 2(10 -6 / K)≤i≤h≤g≤8(10 -6 / K).

[0079] In some optional embodiments, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c also have saturated electron drift velocity distribution characteristics, which are specifically manifested as follows:

[0080] The saturated electron drift velocity of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0081] The saturated electron drift velocity of the second piezoelectric polarization control layer 106b is y7=Qx1 2 +Rx1+S curve distribution, where Q < 0;

[0082] The saturated electron drift velocity of the third piezoelectric polarization control layer 106c is y8=T+U*(e x2 +e -x2 ) / (e x2 -e -x2 ) The third quadrant curve distribution;

[0083] The saturated electron drift velocities in the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b, and the third piezoelectric polarization control layer 106c also have the following relationship:

[0084] The saturated electron drift velocity of the first piezoelectric polarization control layer 106a is j, the saturated electron drift velocity of the second piezoelectric polarization control layer 106b is k, and the saturated electron drift velocity of the third piezoelectric polarization control layer 106c is l, wherein 1E7≤j≤k≤l≤5E7 (cm / s).

[0085] The specific thermal expansion coefficient distribution and saturated electron drift velocity distribution in the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c alleviate the piezoelectric polarization rise caused by thermal mismatch, enhance the quantum confinement effect, passivate defects to suppress hole leakage current, reduce the point defect rise caused by thermal mismatch during the aging process, extend the photon lifetime, thereby reducing the excitation threshold of the laser element, enhancing the limitation factor, and improving the laser element's lasing power, slope efficiency and aging life, and the aging life is increased from 1,000 hours to 100,000 hours.

[0086] In some optional embodiments, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c also have an In / C element ratio distribution characteristic, which is specifically manifested as follows:

[0087] The In / C element ratio of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0088] The In / C element ratio of the second piezoelectric polarization control layer 106b is y9=Vx1 2 +Wx1+Z curve distribution, where V < 0;

[0089] The In / C element ratio of the third piezoelectric polarization control layer 106c is y 10 =A2+B2*(e x2 +e -x2 ) / (e x2 -e -x2 )The third quadrant curve distribution.

[0090] In some optional embodiments, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c also have an In / H element ratio distribution characteristic, which is specifically manifested as follows:

[0091] The In / H element ratio of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0092] The In / H element ratio of the second piezoelectric polarization control layer 106b is y 11 =D2*x1 2 +E2*x1+F2 curve distribution, where D2<0;

[0093] The In / H element ratio of the third piezoelectric polarization control layer 106c is y 12 =G2+H2*(e x2 +e -x2 ) / (e x2 -e -x2 )The third quadrant curve distribution.

[0094] In some optional embodiments, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c also have an In / O element ratio distribution characteristic, which is specifically manifested as follows:

[0095] The In / O element ratio of the first piezoelectric polarization control layer 106a is distributed in a linear function;

[0096] The In / O element ratio of the second piezoelectric polarization control layer 106b is y 13 =I2x1 2 +J2*x1+K2 curve distribution, where I2<0;

[0097] The In / O element ratio of the third piezoelectric polarization control layer 106c is y 14 =L2+M2*e x2 / x2 third quadrant curve distribution.

[0098] The specific element ratio distribution (In / C element ratio distribution, In / H element ratio distribution, In / O element ratio distribution) of the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c further alleviates the thermal mismatch and thermal stress under the condition of large current injection of the laser, enhances the heat dissipation capacity of the laser, improves the temperature characteristics, reduces the laser efficiency attenuation and dead light caused by lattice mismatch and thermal mismatch during the aging process, improves the aging light decay, and increases the aging life from 1,000 hours to 100,000 hours.

[0099] In some optional embodiments, the first piezoelectric polarization control layer 106a, the second piezoelectric polarization control layer 106b and the third piezoelectric polarization control layer 106c are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4, and Ca2NCl.

[0100] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1.

[0101] The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 to 100 angstroms.

[0102] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 150 angstroms.

[0103] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0104] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0105] The following table is a parameter comparison between a conventional semiconductor laser element and a semiconductor laser element provided with a piezoelectric polarization control layer proposed in this embodiment, including slope efficiency, threshold current density, optical power, internal optical loss, and limiting factor, showing the difference between a conventional semiconductor laser element and a semiconductor laser element provided with a piezoelectric polarization control layer proposed in this embodiment:

[0106]

[0107] It can be seen that the semiconductor laser element provided with a piezoelectric polarization control layer proposed in this embodiment improves the slope efficiency and optical power compared with traditional semiconductor laser elements, reduces the 1000H aging optical attenuation, and has obvious advantages over traditional semiconductor laser elements.

[0108] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A semiconductor laser element provided with a piezoelectric polarization control layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: A piezoelectric polarization control layer is arranged between the lower limiting layer and the lower waveguide layer, and the piezoelectric polarization control layer includes a first piezoelectric polarization control layer, a second piezoelectric polarization control layer and a third piezoelectric polarization control layer arranged in sequence from bottom to top, and the first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer all have deformation potential distribution characteristics and piezoelectric polarization coefficient distribution characteristics; The deformation potential of the first piezoelectric polarization control layer is distributed as a linear function; The deformation potential of the second piezoelectric polarization control layer is y1=A+B*x1 2 +C*sinx1 curve distribution; The deformation potential of the third piezoelectric polarization control layer is y2=D+E*e x2 / x2 2 The second quadrant curve distribution; The piezoelectric polarization coefficient of the first piezoelectric polarization regulating layer is distributed in a linear function; The piezoelectric polarization coefficient of the second piezoelectric polarization control layer is y3=Fx1 2 +Gx1+H curve distribution, where F < 0; The piezoelectric polarization coefficient of the third piezoelectric polarization control layer is y4=H+I+J*e x2 / x2 third quadrant curve distribution; Wherein, x1 is the depth from the second piezoelectric polarization control layer to the third piezoelectric polarization control layer, and x2 is the depth from the third piezoelectric polarization control layer to the lower waveguide layer.

2. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The deformation potential of the first piezoelectric polarization control layer is a, the deformation potential of the second piezoelectric polarization control layer is b, and the deformation potential of the third piezoelectric polarization control layer is c, wherein 5eV≤c≤b≤a≤10eV.

3. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The piezoelectric polarization coefficient of the first piezoelectric polarization control layer is d, the piezoelectric polarization coefficient of the second piezoelectric polarization control layer is e, and the piezoelectric polarization coefficient of the third piezoelectric polarization control layer is f, wherein 0.5≤d≤e≤f≤3.

4. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have a thermal expansion coefficient distribution characteristic; The thermal expansion coefficient of the first piezoelectric polarization control layer is distributed in a linear function; The thermal expansion coefficient of the second piezoelectric polarization control layer is y5=K+L*e -x1 +M*e x1 Curve distribution; The thermal expansion coefficient of the third piezoelectric polarization control layer is y6=N+P*x2 2 e x2 Curve distribution; The thermal expansion coefficient of the first piezoelectric polarization control layer is g, the thermal expansion coefficient of the second piezoelectric polarization control layer is h, and the thermal expansion coefficient of the third piezoelectric polarization control layer is i, wherein 2(10 -6 / K)≤i≤h≤g≤8(10 -6 / K).

5. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have saturated electron drift velocity distribution characteristics; The saturated electron drift rate of the first piezoelectric polarization control layer is distributed in a linear function; The saturated electron drift velocity of the second piezoelectric polarization control layer is y7=Qx1 2 +Rx1+S curve distribution, where Q < 0; The saturated electron drift velocity of the third piezoelectric polarization control layer is y8=T+U*(e x2 +e -x2 ) / (e x2 -e -x2 ) The third quadrant curve distribution; The saturated electron drift velocity of the first piezoelectric polarization control layer is j, the saturated electron drift velocity of the second piezoelectric polarization control layer is k, and the saturated electron drift velocity of the third piezoelectric polarization control layer is l, wherein 1E7≤j≤k≤l≤5E7 (cm / s).

6. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have an In / C element ratio distribution characteristic; The In / C element ratio of the first piezoelectric polarization control layer is distributed in a linear function; The In / C element ratio of the second piezoelectric polarization control layer is y9=Vx1 2 +Wx1+Z curve distribution, where V < 0; The In / C element ratio of the third piezoelectric polarization control layer is y 10 =A2+B2*(e x2 +e -x2 ) / (e x2 -e -x2 )The third quadrant curve distribution.

7. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have an In / H element ratio distribution characteristic; The In / H element ratio of the first piezoelectric polarization control layer is distributed in a linear function; The In / H element ratio of the second piezoelectric polarization control layer is y 11 =D2*x1 2 +E2*x1+F2 curve distribution, where D2<0; The In / H element ratio of the third piezoelectric polarization control layer is y 12 =G2+H2*(e x2 +e -x2 ) / (e x2 -e -x2 )The third quadrant curve distribution.

8. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer also have an In / O element ratio distribution characteristic; The In / O element ratio of the first piezoelectric polarization control layer is distributed in a linear function; The In / O element ratio of the second piezoelectric polarization control layer is y 13 =I2x1 2 +J2*x1+K2 curve distribution, where I2<0; The In / O element ratio of the third piezoelectric polarization control layer is y 14 =L2+M2*e x2 / x2 third quadrant curve distribution.

9. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The first piezoelectric polarization control layer, the second piezoelectric polarization control layer and the third piezoelectric polarization control layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, HfO2, NiCo2O4, CoFe2O4, FeF2, and ZrO2.

10. The semiconductor laser element provided with a piezoelectric polarization control layer according to claim 1, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 1. The thickness is 10 angstroms to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and the thickness is 10 angstroms to 150 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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