A coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents

Abstract

A coaxial high-voltage pulse link system based on photoconductive semiconductors for generating high currents comprises a current shunt connected to a coaxial radio frequency cavity, a coaxial gradient electrode disposed within the coaxial radio frequency cavity and connected to the end of the current shunt, a coaxial capacitor module with its end surface facing the coaxial radio frequency cavity connected to the coaxial radio frequency cavity, a photoconductive semiconductor package assembly located within the inner ring of the coaxial capacitor module, one end of the photoconductive semiconductor package assembly connected to the coaxial gradient electrode and the other end connected to a high-voltage optical fiber feed end cap, a coaxial high-voltage ring connected to the high-voltage end face of the coaxial capacitor module, one pin of a carbon film load resistor connected to the coaxial high-voltage ring and the other pin connected to the high-voltage optical fiber feed end cap, and a coaxial high-voltage ring connected to a DC high voltage or pulsed high voltage via a cable. The present invention relates to a coaxial high-voltage pulse link system based on photoconductive semiconductors for generating high currents, capable of generating kA-level high currents, high power, and low spurious parameters.

Description

Technical Field

[0001] The present invention relates to the fields of semiconductors, radio frequency and microwave photonics, and in particular to a coaxial radio frequency link system based on photoconductive semiconductor devices that generates kA-level high current, high power and low stray parameters. Background Art

[0002] With the rapid development of science and technology and the continuous progress of society, the semiconductor industry has become a major industry in the world. As a new type of semiconductor device, wide bandgap and ultra-wide bandgap semiconductor devices have been widely used in radio frequency power amplifiers, microwave devices and radar systems due to their unique advantages such as large bandgap width, high breakdown electric field, good thermal stability, high electron mobility, high saturation drift velocity and high electron concentration. They also have broad application prospects in optoelectronics, quantum electronics and other fields. In recent years, with the in-depth development of disciplines such as materials science, microelectronics technology and semiconductor physics, the research on wide bandgap and ultra-wide bandgap semiconductor devices has made significant progress and has become one of the research hotspots in the semiconductor field. Common wide bandgap semiconductor materials include silicon carbide (SiC) and gallium nitride (GaN), and ultra-wide bandgap semiconductor materials include gallium oxide (Ga2O3), aluminum nitride (AIN), diamond, etc. According to different electrode configurations, they are divided into coplanar type, diaplanar type, facing type, non-facing type, etc. Due to the small size (tens of mm) of wide bandgap semiconductor devices, they are widely used in radio frequency power amplifiers, microwave devices and radar systems. 3 With numerous superior performance characteristics, such as high repetition rate (above MHz), short closing time (sub-ns), low time jitter (sub-ns), high power capacity, and strong electromagnetic compatibility, photoconductive semiconductor devices have become core components for the development of new RF power amplifiers, microwave photon radiation sources, and solid-state compact pulse power sources. As photoconductive semiconductor devices are applied in various fields, the power, repetition rate, lifespan, and stability of devices continue to increase, and the requirements for device output are becoming increasingly stringent, as are the demands for the signal quality of the device's RF link, which is becoming increasingly ideal. Therefore, research on high-power output and low-spurious parameter extraction of devices is particularly important.

[0003] Currently, commonly used photoconductive semiconductor devices in RF links include silicon carbide (SiC) and gallium nitride (GaN). They are categorized by output frequency into low-frequency, medium-frequency, and high-frequency types, and by the type of RF link, into integrated circuit, microstrip, and pulse-forming types. Frequency and capacitance are two critical parameters in RF links, and they are inextricably linked. According to the impedance formula XC = ½πFC, the impedance of a capacitor is inversely proportional to frequency. Therefore, the larger the capacitance, the lower the frequency, while the smaller the capacitance, the higher the frequency. With the application of high-frequency signals, the capacitance of semiconductor devices must be as small as possible, requiring a sufficiently short spacing between the electrodes on the semiconductor. However, a short spacing between electrodes reduces the device's high-voltage withstand capability and output power. For example, to achieve a GHz output, a semiconductor device with an electrode spacing of approximately 1mm is required. To produce a 100A output current, the voltage output must reach 5kV. Given the semiconductor's own impedance and the potential internal resistance in the circuit, the device's withstand voltage is approximately 7kV. We know that in air, the breakdown voltage of a 1mm pitch is approximately 3kV. Taking into account the dual cooperation of electrode optimization and potting insulation glue, the breakdown voltage of a 1mm pitch can reach about 10kV. However, if the output current is in the kA range, the voltage output is as high as 50kV, and the device's withstand voltage is close to 100kV. Therefore, it is unrealistic to achieve such a withstand voltage with a 1mm pitch. Therefore, based on such problems, the present invention proposes a coaxial RF link system based on photoconductive semiconductor devices to generate kA-level high current, high power, and low stray parameters according to the structural characteristics and process limitations of semiconductor devices themselves, as well as the high-power application requirements of devices in RF links. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the shortcomings of the existing technology and provide a coaxial radio frequency link system in which photoconductive semiconductor devices can generate high currents of the kA level and low stray parameters. The system is used to solve the bottleneck problem of the difficulty of photoconductive semiconductor devices in extracting kA-level current output in radio frequency circuits, as well as key technical problems such as voltage output with low stray parameters, and provide a new technical solution for the application design of high-power semiconductor devices.

[0005] In order to solve the above technical problems, the technical solution proposed in the present invention is: a coaxial high-voltage pulse link system based on photoconductive semiconductor to generate large current, comprising a coaxial radio frequency cavity, a coaxial capacitor module, a coaxial high-voltage ring, a photoconductive semiconductor packaging component, a coaxial gradient electrode, a current shunt, a carbon film load resistor and a high-voltage optical fiber feeding end cap; the current shunt is connected to the coaxial radio frequency cavity, the coaxial gradient electrode is arranged in the coaxial radio frequency cavity and connected to the end of the current shunt, the end face of the coaxial capacitor module facing the coaxial radio frequency cavity is connected to the coaxial radio frequency cavity, and the end face of the coaxial capacitor module facing the coaxial radio frequency cavity is connected to the coaxial radio frequency cavity. The photoconductive semiconductor package component is located within the inner ring of the coaxial capacitor module, and one end of the photoconductive semiconductor package component is connected to the coaxial gradient electrode, and the other end is connected to the high-voltage optical fiber feeding end cap. The coaxial high-voltage ring is connected to the high-voltage end face of the coaxial capacitor module. One pin of the carbon film load resistor is connected to the coaxial high-voltage ring, and the other pin is connected to the high-voltage optical fiber feeding end cap. The coaxial high-voltage ring is connected to a DC high voltage or a pulsed high voltage via a cable. The centers of the coaxial RF cavity, the coaxial capacitor module, the coaxial gradient electrode, and the coaxial high-voltage ring are located on the same axis.

[0006] The above-mentioned coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors, preferably, the shell of the current diverter is provided with a first external thread, the coaxial radio frequency cavity is provided with a first internal thread matching the first external thread, and the first external thread on the current diverter is connected to the first internal thread on the coaxial radio frequency cavity.

[0007] The above-mentioned coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors, preferably, the end of the current diverter is provided with a second external thread, the coaxial gradient electrode is provided with a second internal thread, and the second internal thread on the coaxial gradient electrode is connected to the second external thread at the end of the current diverter.

[0008] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current, preferably, the coaxial capacitor module is in a circular ring configuration, one end face of the coaxial capacitor module is connected to the coaxial RF cavity, and the other end face is connected to the coaxial high-voltage ring to form a high-voltage end face.

[0009] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the coaxial high-voltage ring is in a circular ring configuration and is closely attached to the high-voltage end face of the coaxial capacitor module.

[0010] In the above-mentioned coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors, preferably, the photoconductive semiconductor packaging component is located in the inner ring of the circular configuration of the coaxial capacitor module, and the optical path center of the photoconductive semiconductor packaging component is located on the same axis as the center of the coaxial RF cavity, the coaxial capacitor module and the coaxial high-voltage ring.

[0011] In the above-mentioned coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, preferably, the carbon film load resistors are multiple in number and are evenly arranged between the coaxial high-voltage ring and the high-voltage optical fiber feeding end cap.

[0012] In the above-mentioned coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors, preferably, the coaxial radio frequency cavity includes five external cavities, and the outer diameters of the five external cavities increase successively.

[0013] Compared with existing technologies, the present invention offers advantages in that its coaxial high-voltage pulse link system, based on photoconductive semiconductors for generating high current, is capable of generating kA-level high current, high power, and low spurious parameters. It also features a compact structure, lightweight design, high voltage resistance, high current generation, and high power output. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a front view of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0015] Figure 2 This is a right view of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0016] Figure 3 This is a schematic cross-sectional view of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0017] Figure 4 This is a flow chart of the coaxial high-voltage pulse link system for generating large current based on photoconductive semiconductors in Example 1.

[0018] Figure 5 This is a left side view of the photoconductive semiconductor package component.

[0019] Figure 6 It is a front view of the light guide semiconductor package component.

[0020] Figure 7 This is a right side view of the photoconductive semiconductor package component.

[0021] Figure 8 This is a cross-sectional structural diagram of the high-voltage optical fiber feeding end cap.

[0022] Figure 9 This is a cross-sectional structural diagram of the coaxial RF cavity.

[0023] Figure 10 This is the top view of the coaxial RF cavity.

[0024] Figure 11 This is a cross-sectional structural diagram of the current shunt.

[0025] Figure 12 This is a cross-sectional structural diagram of the coaxial gradient electrode.

[0026] Figure 13 This is a cross-sectional structural diagram of the coaxial capacitor module.

[0027] Figure 14 This is the top view of the coaxial capacitor module.

[0028] Figure 15 This is the top view of the coaxial high-voltage ring.

[0029] Figure 16 This is a cross-sectional structural diagram of the coaxial high-pressure ring.

[0030] Figure 17 This is a cross-sectional structural diagram of a carbon film non-inductive load resistor.

[0031] Figure 18 This is a typical kA-level current waveform generated by the coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents in this embodiment.

[0032] Legend

[0033] 1. Current shunt; 2. Coaxial RF cavity; 3. Coaxial gradient electrode; 4. Coaxial capacitor module; 5. Coaxial high-voltage ring; 6. Carbon film non-inductive load resistor; 7. High-voltage optical fiber feed end cap; 8. Photoconductive semiconductor packaging component; 9. Fixing screw. DETAILED DESCRIPTION

[0034] In order to facilitate understanding of the present invention, the present invention will be described more comprehensively and meticulously below in conjunction with preferred embodiments, but the protection scope of the present invention is not limited to the following specific embodiments.

[0035] It should be noted that when an element is described as being "fixed, fixed, connected or communicated with" another element, it can be directly fixed, fixed, connected or communicated with the other element, or it can be indirectly fixed, fixed, connected or communicated with the other element through other intermediate connectors.

[0036] Unless otherwise defined, all technical terms used hereinafter have the same meanings as those generally understood by those skilled in the art. The technical terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of the present invention. Example

[0037] like Figure 1 、 Figure 2 and Figure 3The coaxial high-voltage pulse link system shown in the figure, which generates large current based on photoconductive semiconductors, includes a coaxial radio frequency cavity 2, a coaxial capacitor module 4, a coaxial high-voltage ring 5, a photoconductive semiconductor packaging component 8, a coaxial gradient electrode 3, a current shunt 1, a carbon film load resistor and a high-voltage optical fiber feeding end cap 7; the centers of the coaxial radio frequency cavity 2, the coaxial capacitor module 4, the coaxial gradient electrode 3 and the coaxial high-voltage ring 5 are located on the same axis. The current diverter 1 is connected to the coaxial RF cavity 2, the coaxial gradient electrode 3 is arranged in the coaxial RF cavity 2 and connected to the end of the current diverter 1, the end face of the coaxial capacitor module 4 facing the coaxial RF cavity 2 is connected to the coaxial RF cavity 2, the photoconductive semiconductor package component 8 is located in the inner ring of the coaxial capacitor module 4 and one end of the photoconductive semiconductor package component 8 is connected to the coaxial gradient electrode 3 and the other end is connected to the high-voltage optical fiber feeding end cap 7, the coaxial high-voltage ring 5 is connected to the high-voltage end face of the coaxial capacitor module 4, one pin of the carbon film load resistor is connected to the coaxial high-voltage ring 5, and the other pin is connected to the high-voltage optical fiber feeding end cap 7, and the coaxial high-voltage ring 5 is connected to DC high voltage or pulse high voltage through a cable.

[0038] like Figure 4 As shown, in this embodiment, light source energy is transmitted via an optical fiber. The fiber feed is connected to a high-voltage optical fiber end cap. The light energy irradiates the photoconductive semiconductor package 8. The photoconductive semiconductor device in the photoconductive semiconductor package 8 receives the light energy and, under the combined action of the bias voltage of the coaxial capacitor module 4, generates powerful photogenerated carriers. The coaxial RF structure converts the optical signal into an electrical signal, which is finally extracted through the current shunt 1 and acquired on an oscilloscope. The photoconductive semiconductor device can be made of conventional wide-bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), and diamond. The technical solution is also conventional, consisting of six major systems: light source, high voltage, semiconductor device packaging, photoconductive coupling, RF configuration, and high-current extraction.

[0039] In this embodiment, the photoconductive semiconductor package component 8 has the functions of completing the packaging of the photoconductive semiconductor device, improving the insulation and voltage resistance of the photoconductive semiconductor device, and completing the light input and electrical output. Figure 5 As shown, the front view is as Figure 6 、Right side view Figure 7As shown. The semiconductor package assembly consists of a wide bandgap semiconductor device, a high-voltage electrode, an output electrode, a high-voltage insulating encapsulation adhesive, a package assembly board, and fixings. In the structural dimension design, the insulator length of the photoconductive semiconductor package assembly 8 is L7 = L12 = 30mm, the width is L8 = L13 = L11 = 30mm, the height is H22 = 12.5mm, the chamfer r13 = 2mm, the chamfer r14 is 2mm, the height between the high-voltage electrode fixing cap and the output electrode fixing cap is H23 = 24.5mm, the height between the high-voltage electrode end face and the output electrode end face is H24 = 34.5mm, the output electrode has an M9 = M8 external thread and a length of L9 = 13mm, and the high-voltage electrode has an M10 = M8 external thread and a length of L10 = 13mm.

[0040] In this embodiment, the high-voltage optical fiber feeding end cap 7 has the function of completing the connection between the optical fiber and the high-voltage end and completing the optical fiber feeding. The cross-sectional structure diagram of the high-voltage optical fiber feeding end cap 7 is as follows: Figure 8 As shown, the selected material is brass, and the design adopts a coaxial integrated configuration. The structural dimensions are designed as follows: the high-voltage connection end has an M11 = M8 internal thread, a thread depth of H28 = 9mm, an outer radius of R24 = 8mm, a height of H29 = 15mm, and a chamfer of r15 = 5mm. The fiber feed end has an M12 = M5 external thread, an inner radius of R25 = 2mm, and a total height of H30 = 20mm for the high-voltage fiber feed end cap 7. The surface finish is better than 0.8.

[0041] In this embodiment, the housing of the current splitter 1 is provided with a first external thread, and the coaxial RF cavity 2 is provided with a first internal thread that matches the first external thread. The first external thread on the current splitter 1 is connected to the first internal thread on the coaxial RF cavity 2. The end of the current splitter 1 is provided with a second external thread, and the coaxial gradient electrode 3 is provided with a second internal thread. The second internal thread on the coaxial gradient electrode 3 is connected to the second external thread on the end of the current splitter 1.

[0042] In this embodiment, the coaxial RF cavity 2 includes five external cavities, and the outer diameters of the five external cavities increase in sequence. The function of the coaxial RF cavity 2 is to complete the extraction of higher frequency response signals in the RF link, complete the connection between the input and output ends, and complete the system heat dissipation at high frequencies. The cross-sectional structure diagram of the coaxial RF cavity 2 is shown in FIG. Figure 9 As shown, the top view is as Figure 10As shown, the selected material is brass, and the design adopts a coaxial integrated configuration. In the structural dimension design, the internal thread height is H1=7mm, the internal thread is M1=M16 internal thread, the inner cavity angle is Y0=68.47°, the chamfer is r4=10mm, the outer cavity outer diameter 1 radius is R1=23mm, the height is H3=4mm, and the length from R4 is L3=12mm, the outer cavity outer diameter 2 radius is R2=25mm, the height is H5=4mm, and the length from R4 is L2=10mm, the outer cavity outer diameter 3 radius is R3=27mm, the height is H7=4mm, and the length from R4 is L1=8m m, the outer diameter 4 radius of the outer cavity is R4 = 35mm, the height is H2 = 3mm, H4 = 3mm, H6 = 3mm, the chamfer is r1 = 2mm, the coaxial RF cavity 2 fixing hole spacing radius is R5 = 44mm, the fixing hole size is Ø1 = 5.5mm, the number is 6, evenly distributed around the circumference, the outer radius 6 of the outer cavity is R6 = 50mm, the chamfer r2 = 1mm, the chamfer r3 = 1mm, there are two heights, namely height 1 and height 2, height 1 is H8 = 22mm, height 2 is H9 = 25mm, such as Figure 7 As shown, the ground fixing hole is an M2=M4 external thread, located between the two fixing holes, with a depth of through, Ø2 is the fixing hole size = Ø1 = 5.5mm, and Ø3 is the outer diameter of the outer cavity = 100mm.

[0043] The current splitter 1 of this embodiment is used to extract the current value in the link. Its cross-sectional structure is shown in FIG. Figure 11 The current shunt 1 used is based on Ohm's law and is designed to have a very small known impedance. It is connected in series with the circuit under test and the voltage drop across the two ends of the shunt is measured. The current value in the circuit can be calculated based on I = U / R. In the structural dimension design, the input fixed end is an M5=M4 external thread, made of brass, with a height of H15=6mm. The high-voltage insulation sleeve is made of polytetrafluoroethylene, with an outer radius of R13=4.5mm and a height of H16=7mm. The ground terminal is fixed with an M6=M16 external thread, made of brass, with a height of H17=12mm. The outer radius of the limit ring is R14=10mm, with a height of H18=3mm. The shell radius is R16=8mm, with a height of H19=46mm. The output interface is BNC, with a height of H20=11mm. The outer diameter of the fixing buckle is Ø11=2mm, the height from the port is H21=5mm, the length of the fixing buckle from the center is L4=6mm, and the outer radius of the BNC is R15=4.75mm.

[0044] In this embodiment, the coaxial gradient electrode 3 has the functions of completing the connection impedance matching and completing the connection between the output end of the photoconductive semiconductor device and the current splitter 1. The cross-sectional structure diagram of the coaxial gradient electrode 3 is shown in FIG. Figure 12As shown, the selected material is brass, and the design adopts a coaxial integrated configuration. In the structural dimension design, the measurement input docking end has an M8 = M8 internal thread, a thread depth of L6 = 6mm, and an outer radius of R18 = 8mm. The measurement output docking end has an M7 = M3 internal thread, a thread depth of L5 = 4mm, an outer radius of R17 = 4.56mm, a gradient angle of Y2° = 69°, and a chamfer of r12 = 5mm. The overall structural finish is better than 0.8.

[0045] In this embodiment, the coaxial capacitor module 4 is annular in shape, with one end face of the coaxial capacitor module 4 connected to the coaxial RF cavity 2 and the other end face connected to the coaxial high-voltage ring 5 as the high-voltage end face. The coaxial high-voltage ring 5 is also annular in shape and is closely attached to the high-voltage end face of the coaxial capacitor module 4; the outer diameter of the coaxial high-voltage ring 5 is smaller than the outer diameter of the coaxial capacitor module 4.

[0046] In this embodiment, the photoconductive semiconductor package component 8 is located within the inner ring of the circular configuration of the coaxial capacitor module 4, and the optical path center of the photoconductive semiconductor package component 8 is located on the same axis as the centers of the coaxial RF cavity 2, the coaxial capacitor module 4 and the coaxial high-voltage ring 5.

[0047] In this embodiment, the coaxial capacitor module 4 has the function of completing parameter optimization by multi-stage parallel connection, shielding stray parameters in the link, and providing bias voltage for the photoconductive semiconductor device. Figure 13 As shown, the top view is as Figure 14 As shown, the selected material is alumina ceramic, and the design adopts a coaxial ring integrated configuration. The designed capacitance value is in the nF range. In the structural dimension design, the inner ring radius is R7 = 25mm, the front chamfer is r5 = 3mm, the rear chamfer is r6 = 3mm, the high-voltage electrode fixing hole is M3 = M5 internal thread, the hole depth is H10 = 5mm, the hole outer diameter is Ø4 = 12mm, the chamfer is r7 = 0.5mm, the hole spacing radius is R8 = 44mm, the number of fixing holes is 6, and the hole fixing layout is evenly distributed around the circumference. The outer radius of the coaxial capacitor module 4 is R9 = 60mm, the height 1 is H11 = 24mm, the height 2 is H12 = 26mm, the inner diameter of the overall structure is Ø5 = 50mm, and the outer diameter is Ø6 = 120mm.

[0048] In this embodiment, the coaxial high voltage ring 5 has the functions of completing high voltage docking and completing electric field homogenization. Figure 15 As shown, the cross-sectional structure diagram is as follows Figure 16As shown, the selected material is brass, and the design adopts a coaxial ring integrated configuration. In the structural dimension design, the inner radius of the ring is R10 = 40mm, the height is H14 = 9mm, the front chamfer is r8 = 1mm, the rear chamfer is r9 = 1mm, the high-voltage fixing hole is Ø9 = 5.2mm, the hole spacing radius is R11 = 44mm, the number of holes is 6, and the hole layout is evenly distributed around the circumference. The outer radius of the coaxial high-voltage ring 5 is R12 = 50mm, the front chamfer is r11 = 2mm, the rear chamfer is r10 = 2mm, the 6-pin hole of the carbon film non-inductive load resistor is Ø10 = 1mm, the height from the rear plane of the ring is H13 = 2.5mm, the number of holes is 6, and the hole layout is evenly distributed around the circumference and located at the center of the two high-voltage fixing holes, as shown in the figure. Figure 10 As shown, the high-voltage feed-in fixing hole is M4 = M4 external thread, the depth is through, Ø7 is the inner diameter of the coaxial high-voltage ring 5 = 80 mm, and Ø8 is the outer diameter of the coaxial high-voltage ring 5 = 100 mm.

[0049] In this embodiment, there are 6 carbon film load resistors, which are evenly arranged between the coaxial high voltage ring 5 and the high voltage optical fiber feeding end cap 7. The carbon film non-inductive load resistor 6 in this embodiment has the function of providing low stray load and matching the link load impedance value. The cross-sectional structure of the carbon film non-inductive load resistor 6 is shown in FIG. Figure 17 As shown, the selected material is carbon film, with a single impedance value of 50Ω and an inductance value of less than 10nH. In the structural dimension design, the outer radius 1 of the carbon film material is R20 = 4.5mm, the outer radius 2 is R21 = 4mm, the height 1 is H25 = 15mm, the height 2 is H26 = 23mm, the outer radius of the metal pin of the carbon film non-inductive load resistor 6 is R19 = R22 = 0.5mm, the distance from the outer diameter of the carbon film material is R23 = 4.5mm, and the total height of the carbon film non-inductive load resistor 6 is H27 = 35mm. In this embodiment, the five carbon film load resistors are connected to the high voltage, thereby completing the high voltage feed; at the same time, because the coaxial high-voltage ring 5 and the coaxial capacitor module 4 are connected together, a bias voltage is formed in the inner ring of the coaxial capacitor module 4.

[0050] The assembly of the coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents in this embodiment includes the following steps:

[0051] The first step is to fix the M6 ​​external thread on the current splitter 1 on the M1 internal thread of the coaxial RF cavity 2 by rotating it clockwise to complete the matching connection between the current splitter 1 and the coaxial RF cavity 2.

[0052] In the second step, the M5 internal thread on the coaxial gradient electrode 3 is fixed to the M7 external thread on the current diverter 1 by rotating it clockwise, thereby completing the matching connection between the coaxial gradient electrode 3 and the current diverter 1.

[0053] In the third step, align the 6 M3 threaded holes on the ground end face of the coaxial capacitor module 4 with the 6 Ø1 through holes on the coaxial RF cavity 2, and then tighten them clockwise with 6 fixing screws 9 to complete the connection between the coaxial capacitor module 4 and the coaxial RF cavity 2.

[0054] In the fourth step, the M9 external thread on the photoconductive semiconductor package component 8 is fixed to the M8 internal thread on the coaxial gradient electrode 3 by rotating it clockwise, thereby completing the mating connection between the photoconductive semiconductor package component 8 and the coaxial gradient electrode 3.

[0055] Step 5: Align the six Ø9 through holes on the coaxial high-voltage ring 5 with the six M3 threaded holes on the high-voltage end face of the coaxial capacitor module 4, and then tighten them clockwise with six fixing screws 9 to complete the connection between the coaxial capacitor module 4 and the coaxial high-voltage ring 5.

[0056] Step 6: Fix the M11 internal thread on the high-voltage optical fiber feeding end cap 7 to the M10 external thread on the optical semiconductor package assembly 8 by rotating it clockwise to complete the mating connection between the high-voltage optical fiber feeding end cap 7 and the optical semiconductor package assembly 8.

[0057] In the seventh step, secure one end of the carbon film non-inductive load resistor 6 to the Ø10 hole on the coaxial high-voltage ring 5 and the other end to the high-voltage fiber feed-in end cap 7. Six carbon film non-inductive load resistors 6 are evenly distributed around the six Ø10 holes on the coaxial high-voltage ring 5, completing the connection between the carbon film non-inductive load resistors 6 and the coaxial high-voltage ring 5.

[0058] Step 8: Fix the DC high voltage or pulse high voltage to the M4 internal thread on the coaxial high voltage ring 5 through the cable to complete the high voltage feed connection.

[0059] Step 9: Fix the ground wire to the M2 internal thread on the coaxial RF cavity 2 through the cable to complete the connection of the ground wire.

[0060] In the tenth step, the light source signal is directly emitted to the high-voltage optical fiber feeding port through spatial light or fixed on the high-voltage optical fiber feeding end cap 7 through optical fiber transmission to complete the light source feeding connection.

[0061] This embodiment proposes a coaxial RF link system based on photoconductive semiconductor devices that generates high kA-level current, high power, and low spurious parameters. By adjusting the feed parameters of the photoconductive semiconductor devices, an adjustable high current output ranging from 0 to kA can be generated. Depending on the power parameters generated, this system can be applied in various fields, including aerospace, aviation, optoelectronics, radar, RF power amplifiers, microwave photon radiation sources, and solid-state compact pulse power sources.

[0062] like Figure 181 is a typical kA-level current waveform generated by a coaxial radio frequency link system based on a photoconductive semiconductor device to generate a kA-level high current and low stray parameters according to this embodiment.

Claims

1. A coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large currents, characterized by: The invention comprises a coaxial radio frequency cavity, a coaxial capacitor module, a coaxial high-voltage ring, a photoconductive semiconductor package component, a coaxial gradient electrode, a current shunt, a carbon film load resistor and a high-voltage optical fiber feeding end cap; the current shunt is connected to the coaxial radio frequency cavity, the coaxial gradient electrode is arranged in the coaxial radio frequency cavity and connected to the end of the current shunt, the end face of the coaxial capacitor module facing the coaxial radio frequency cavity is connected to the coaxial radio frequency cavity, the photoconductive semiconductor package component is located in the inner ring of the coaxial capacitor module, one end of the photoconductive semiconductor package component is connected to the coaxial gradient electrode and the other end is connected to the high-voltage optical fiber feeding end cap, the coaxial high-voltage ring is connected to the high-voltage end face of the coaxial capacitor module, one pin of the carbon film load resistor is connected to the coaxial high-voltage ring and the other pin is connected to the high-voltage optical fiber feeding end cap, and the coaxial high-voltage ring is connected to a DC high voltage or a pulsed high voltage via a cable; the centers of the coaxial radio frequency cavity, the coaxial capacitor module, the coaxial gradient electrode and the coaxial high-voltage ring are located on the same axis.

2. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 1, characterized in that: The shell of the current splitter is provided with a first external thread, the coaxial RF cavity is provided with a first internal thread matching the first external thread, and the first external thread on the current splitter is connected to the first internal thread on the coaxial RF cavity.

3. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 1, characterized in that: The end of the current splitter is provided with a second external thread, and the coaxial gradient electrode is provided with a second internal thread. The second internal thread on the coaxial gradient electrode is connected to the second external thread on the end of the current splitter.

4. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 1, characterized in that: The coaxial capacitor module is in a circular ring configuration. One end face of the coaxial capacitor module is connected to the coaxial radio frequency cavity, and the other end face is connected to the coaxial high-voltage ring to form a high-voltage end face.

5. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 4, characterized in that: The coaxial high-voltage ring is in a circular ring configuration and is closely attached to the high-voltage end face of the coaxial capacitor module.

6. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 1, characterized in that: The photoconductive semiconductor package component is located in the inner ring of the coaxial capacitor module. The optical path center of the photoconductive semiconductor package component is located on the same axis as the centers of the coaxial RF cavity, the coaxial capacitor module and the coaxial high-voltage ring.

7. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 1, characterized in that: There are multiple carbon film load resistors, which are evenly arranged between the coaxial high-voltage ring and the high-voltage optical fiber feeding end cap.

8. The coaxial high-voltage pulse link system based on photoconductive semiconductors to generate large current according to claim 1, characterized in that: The coaxial radio frequency cavity includes five external cavities, and the outer diameters of the five external cavities increase successively.

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