Display panel and display device
By setting transistors with different mobility in the array substrate of the display panel and ensuring that the first type of transistors operate stably in a high temperature environment, the problems of shortened life and poor stability of the existing display panel are solved, and higher stability and service life are achieved.
Patent Information
- Application Number
- CN202510104208.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-22
- Publication Date
- 2025-04-29
AI Technical Summary
The existing display panel has shortened its lifespan for a long time, and the mobility of thin film transistors is improved but the stability is poor, resulting in reliability problems.
By providing a first-class transistor and a second-class transistor in the array substrate, the first active layer mobility of the first-class transistor is smaller than the second-class active layer mobility of the second-class transistor, ensuring that the first-class transistor is more stable when operating in a high-temperature environment.
Improves the stability and service life of the display panel, while enhancing the driving performance of the display panel.
Smart Images
Figure CN119907309A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of display equipment, and in particular to a display panel and a display device. Background Art
[0002] Flat display panels such as Liquid Crystal Display (LCD) panels, Organic Light Emitting Display (OLED) panels and display panels using Light Emitting Diode (LED) devices are widely used in various consumer electronic products such as mobile phones, televisions, personal digital assistants, digital cameras, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body and wide application range, becoming the mainstream in display devices. Summary of the invention
[0003] The embodiments of the present application provide a display panel and a display device, which can improve the service life of the display panel and the display performance of the display panel at the same time.
[0004] In a first aspect, an embodiment of the present application provides a display panel, the display panel includes an array substrate and a light-emitting functional layer, the array substrate includes a first type of transistor and a second type of transistor, the first type of transistor includes a first active layer, the second type of transistor includes a second active layer, the mobility of the first active layer is less than the mobility of the second active layer. The light-emitting functional layer is disposed on the array substrate, the light-emitting functional layer includes a light-emitting unit, and the first type of transistor is electrically connected to the light-emitting unit.
[0005] In some embodiments, the array substrate includes a pixel driving circuit and a functional circuit, the first type of transistors are arranged in the pixel driving circuit, and the second type of transistors are arranged in the functional circuit.
[0006] In some embodiments, the array substrate includes a pixel driving circuit, and the first type of transistor and the second type of transistor are both arranged in the pixel driving circuit;
[0007] In some embodiments, the pixel driving circuit includes a driving transistor and a switching transistor, the first type of transistor includes the driving transistor, and the second type of transistor includes the switching transistor.
[0008] In some embodiments, the second type of transistor includes a first sub-transistor arranged in the display area and a second sub-transistor arranged in the non-display area, the first sub-transistor includes a first sub-active layer, the second sub-transistor includes a second sub-active layer, and the first sub-active layer and the second sub-active layer are arranged in the same layer and the same material.
[0009] In some embodiments, the second type of transistor includes a first sub-transistor arranged in the display area and a second sub-transistor arranged in the non-display area, the first sub-transistor includes a first sub-active layer, the second sub-transistor includes a second sub-active layer, the second active layer includes multiple sub-layers, the mobility of some sub-layers in the multiple sub-layers is greater than the mobility of another part of the sub-layers, and at least one of the first sub-active layer and the second sub-active layer includes multiple sub-layers.
[0010] In some embodiments, the first active layer is located between the second active layer and the light emitting functional layer.
[0011] In some embodiments, the second active layer includes a first sublayer and a second sublayer, the first sublayer is located on a side of the second sublayer facing the light-emitting functional layer, and the mobility of the first sublayer is greater than the mobility of the second sublayer.
[0012] In some embodiments, the mobility of the second sub-layer is equal to the mobility of the first active layer.
[0013] In some embodiments, the second active layer further includes a third sublayer, the third sublayer is located on a side of the first sublayer facing away from the second sublayer, and the mobility of the first sublayer is greater than the mobility of the third sublayer.
[0014] In some embodiments, the mobility of the second sub-layer is equal to the mobility of the third sub-layer.
[0015] In some embodiments, the mobility of the first active layer is less than or equal to 20 cm 2 / Vs.
[0016] In some embodiments, the mobility of the second active layer is greater than or equal to 25 cm 2 / Vs.
[0017] In some embodiments, the mobility of the second active layer is greater than or equal to 50 cm 2 / Vs.
[0018] In a second aspect, an embodiment of the present application provides a display device, comprising a display panel in any of the aforementioned embodiments.
[0019] The embodiments of the present application provide a display panel and a display device, wherein transistors in an array substrate are set to be first-type transistors and second-type transistors, wherein the mobility of the first active layer in the first-type transistors is less than the mobility of the second active layer in the second-type transistors, so that the stability of the first active layer is stronger than the stability of the second active layer, and the mobility of electrons in the second active layer is greater than the mobility of electrons in the first active layer, so that the driving performance of the second-type transistors is stronger than the driving performance of the first-type transistors, and since the light-emitting units in the light-emitting functional layer generate heat during photoelectric conversion, the first-type transistors are electrically connected to the light-emitting units, and the first-type transistors work in a high-temperature environment, and the stability of the first-type transistors is stronger than the stability of the second-type transistors, thereby improving the stability and service life of the display panel during the display process, and the second-type transistors are used in other circuits in the display panel to improve the display performance of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0021] Figure 1 is a schematic diagram of a cross-sectional structure of a display panel provided in an embodiment of the present application;
[0022] Figure 2 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application;
[0023] Figure 3 is a schematic diagram of a display panel provided in an embodiment of the present application;
[0024] Figure 4 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application;
[0025] Figure 5 is a schematic diagram of a pixel circuit in a display panel provided in an embodiment of the present application;
[0026] Figure 6 This is a schematic diagram of a pixel circuit in another display panel provided in an embodiment of the present application.
[0027] Figure 7 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application;
[0028] Figure 8 is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application;
[0029] Fig. 9is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application;
[0030] Fig.10 It is a structural schematic diagram of a display device provided in an embodiment of the present application.
[0031] Marking Description:
[0032] AA, display area; NA, non-display area;
[0033] 10. array substrate; 11. first type transistor; 111. first active layer; 12. second type transistor; 121. second active layer; 1211. first sub-layer; 1212. second sub-layer; 1213. third sub-layer; 122. first sub-transistor; 123. second sub-transistor;
[0034] 20. Light-emitting functional layer; 21. Light-emitting unit. DETAILED DESCRIPTION
[0035] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.
[0036] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.
[0037] In existing display panels, circuits are usually used to control display and other functions. The circuit controls the on and off of thin film transistors to control the display image and other functions.
[0038] However, as display technology develops towards ultra-high definition, high refresh rate, low power consumption and transparency, higher requirements are placed on the mobility and stability of thin film transistors. Mobility is a key parameter to measure the current driving capability of thin film transistors. As mobility increases, the current driving capability of thin film transistors also increases. However, materials with high mobility have poor stability, which leads to poor reliability of thin film transistors and shortens the life of display panels under long-term use.
[0039] Figure 1 It is a schematic diagram of a cross-sectional structure of a display panel provided in an embodiment of the present application. Figure 2 It is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application.
[0040] First, see Figure 1 and Figure 2 The embodiment of the present application provides a display panel. The display panel includes an array substrate 10 and a light-emitting functional layer 20. The array substrate 10 includes a first type of transistor 11 and a second type of transistor 12. The first type of transistor 11 includes a first active layer 111. The second type of transistor 12 includes a second active layer 121. The mobility of the first active layer 111 is less than the mobility of the second active layer 121. The light-emitting functional layer 20 is disposed on the array substrate 10. The light-emitting functional layer 20 includes a light-emitting unit 21. The first type of transistor 11 is electrically connected to the light-emitting unit 21.
[0041] In some embodiments of the present application, the display panel provided in the embodiments of the present application may be an organic light emitting diode (OLED) display panel.
[0042] Optionally, the array substrate 10 may include a substrate and an array layer disposed on the substrate.
[0043] Exemplarily, the substrate can be a hard substrate, such as a glass substrate; or it can be a flexible substrate, the material of which can be polyimide, polystyrene, polyethylene terephthalate, polyparaxylene, polyethersulfone or polyethylene naphthalate, and the substrate is mainly used to support the device disposed thereon.
[0044] The array layer may include a pixel driving circuit. For example, the array layer may include a first conductive layer, a second conductive layer, and a third conductive layer that are arranged on one side of the substrate and are stacked. An insulating layer is provided between adjacent conductive layers. Exemplarily, the pixel driving circuit provided in the array layer includes a transistor and a storage capacitor Cst. The transistor includes an active layer, a gate, a source and a drain. The storage capacitor Cst includes a first plate and a second plate. As an example, the gate and the first plate may be located in the first conductive layer, the second plate may be located in the second conductive layer, and the source and the drain may be located in the third conductive layer. The first type of transistor 11 and the second type of transistor 12 may be provided in the same layer. Of course, when the first active layer 111 in the first type of transistor 11 and the second active layer 121 in the second type of transistor 12 are provided in the same layer, the materials of the first active layer 111 and the second active layer 121 are different.
[0045] Optionally, the array layer may further include multiple conductive layers, and the first type of transistor 11 and the second type of transistor 12 are arranged in different conductive layers. Exemplarily, the array layer may include a first conductive layer, a second conductive layer, a third conductive layer and a fourth conductive layer which are arranged on one side of the substrate and are stacked. The first type of transistor 11 includes a first gate, the second type of transistor 12 includes a second gate, the second gate and the first electrode plate may be located in the first conductive layer, the second electrode plate may be located in the second conductive layer, the first gate is located in the third conductive layer, and the source and drain of the first type of transistor 11 and the source and drain of the second type of transistor 12 are all located in the fourth conductive layer.
[0046] Optionally, the first type transistor 11 and the second type transistor 12 may be the same type of a top-gate thin film transistor, a bottom-gate thin film transistor, and a dual-gate thin film transistor, or may be two of them.
[0047] Optionally, when the transistor is a top-gate thin-film transistor, a light shielding layer needs to be provided below the active layer, and the light shielding layer can reuse the conductive material in the conductive layer. For example, the first type of transistor 11 is a top-gate thin-film transistor, and the first active layer 111 of the first type of transistor 11 can be provided below the second conductive layer, and the light shielding layer of the first type of transistor 11 is provided on the same layer as the second conductive layer. Optionally, the light shielding layer can be electrically connected to the source of the first type of transistor 11, so that the light shielding layer has a fixed potential, thereby reducing the possibility that the light shielding layer affects the potential of the first active layer 111 due to its own conductive material.
[0048] The number of the light emitting units 21 may include multiple ones, and the light emitted by the multiple light emitting units 21 may be different. For example, the light emitting unit 21 may include a red light emitting unit, a green light emitting unit, and a blue light emitting unit.
[0049] The light-emitting functional layer 20 is arranged on the array substrate 10. For example, the light-emitting functional layer 20 can be arranged on the side of the array layer facing away from the substrate. The light-emitting functional layer 20 can also include a first electrode layer, a pixel definition layer and a second electrode layer, wherein the pixel definition layer includes a pixel opening, the first electrode layer includes a first electrode, at least a portion of the first electrode is exposed to the pixel opening, the light-emitting unit 21 is arranged at the pixel opening, and the second electrode layer is arranged on the side of the light-emitting unit 21 facing away from the first electrode.
[0050] Optionally, the first type transistor 11 and the light emitting unit 21 may be electrically connected through a via.
[0051] Optionally, the first active layer 111 and the second active layer 121 include an oxide semiconductor. Optionally, the first active layer 111 includes indium gallium zinc oxide (IGZO) and indium gallium zinc tin oxide (IGZTO). Optionally, the second active layer 121 includes a binary, ternary, or quaternary indium-containing material, such as indium gallium zinc oxide (IGZO), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), indium tin zinc oxide (ITZO), and indium gallium zinc tin oxide (IGZTO). It is understood that when the first active layer 111 and the second active layer 121 both include the same material, the composition of the elements in the material may be different to change the mobility of the first active layer 111 and the second active layer 121.
[0052] The embodiment of the present application provides a display panel, by setting the transistors in the array substrate 10 to be a first type of transistor 11 and a second type of transistor 12, the mobility of the first active layer 111 in the first type of transistor 11 is less than the mobility of the second active layer 121 in the second type of transistor 12, so that the stability of the first active layer 111 is stronger than the stability of the second active layer 121, the mobility of electrons in the second active layer 121 is greater than the mobility of electrons in the first active layer 111, so that the driving performance of the second type of transistor 12 is stronger than the driving performance of the first type of transistor 11, because the light-emitting unit 21 in the light-emitting functional layer 20 generates heat during photoelectric conversion, the first type of transistor 11 is electrically connected to the light-emitting unit 21, the first type of transistor 11 works in a high temperature environment, the stability of the first type of transistor 11 is stronger than the stability of the second type of transistor 12, thereby improving the stability and service life of the display panel during the display process, and the second type of transistor 12 is used in other circuits in the display panel to improve the driving performance of the display panel.
[0053] Figure 3 This is a schematic diagram of a display panel provided in an embodiment of the present application. Figure 4 It is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application.
[0054] like Figures 1 to 4 As shown, in some optional embodiments, the array substrate includes a pixel driving circuit and a functional circuit, the first type of transistors are arranged in the pixel driving circuit, and the second type of transistors are arranged in the functional circuit.
[0055] Optionally, the display panel includes a display area AA and a non-display area NA, at least part of the pixel driving circuit is disposed in the display area AA, and at least part of the functional circuit is disposed in the non-display area NA.
[0056] Optionally, the non-display area NA may be arranged around the display area AA, and the non-display area NA may be arranged on the peripheral side of the display area AA. Optionally, the non-display area NA may also be arranged in the display area AA.
[0057] Optionally, the functional circuit includes a GIP circuit (Gate In Panel), a test circuit (cell test, CT), an electrostatic protection circuit (cell test Electro-Static discharge, CT ESD) for protecting the test circuit, and an electrostatic protection circuit (data Electro-Static discharge, Data ESD) for protecting the data circuit.
[0058] In the embodiment of the present application, since the stability of the first type of transistor is stronger than the stability of the second type of transistor, and the pixel driving circuit needs to be used for a long time, setting the first type of transistor in the pixel driving circuit is beneficial to improving the service life of the display panel, and the driving performance of the second type of transistor is stronger than the driving performance of the first type of transistor. Setting the second type of transistor in the functional circuit is beneficial to improving the driving performance of the functional circuit and improving the performance of the display panel.
[0059] Figure 5 This is a simplified diagram of a pixel circuit in a display panel provided in an embodiment of the present application. Figure 6 This is a schematic diagram of a pixel circuit in another display panel provided in an embodiment of the present application. Figure 5 and Figure 6 The structure marked with LED is the light emitting unit 21 .
[0060] like Figures 3 to 6 As shown, in some optional embodiments, the array substrate includes a pixel driving circuit, and the first type of transistor and the second type of transistor are both arranged in the pixel driving circuit. The pixel driving circuit includes a driving transistor and a switching transistor, the first type of transistor includes a driving transistor, and the second type of transistor includes a switching transistor.
[0061] Optionally, the switch transistor is only used for switching on or off and does not generate a drive current; the drive transistor is used for generating a drive current.
[0062] Optionally, the pixel driving circuit may include 4T1C, 5T1C, 6T1C or other arrangements.
[0063] For example, Figure 5 As shown, taking 6T1C as an example, the pixel driving circuit includes a driving transistor T1-1, a data writing transistor T1-2, a threshold compensation transistor T1-3, a storage capacitor reset transistor T1-4, a pixel electrode reset transistor T1-5, a light emitting control transistor T1-6 and a storage capacitor Cst. Specifically, each transistor has a control terminal, a first electrode and a second electrode, the control terminal is used to control whether the first electrode and the second electrode are turned on or off, and the storage capacitor Cst includes a first electrode plate and a second electrode plate relative to each other. Optionally, the first scanning line Scan 1 is connected to the control terminal of the threshold compensation transistor T1-3, the first electrode of the threshold compensation transistor T1-3 is connected to the control terminal of the driving transistor T1-1 and / or the first substrate of the storage capacitor Cst, the first scanning line Scan 1 is connected to the control terminal of the pixel electrode reset transistor T1-5, and the first electrode of the pixel electrode reset transistor T1-5 is connected to the reset signal line Vref.
[0064] The second scan line 2 is connected to the control end of the data write transistor T1-2, the first electrode of the data write transistor T1-2 is connected to the data signal line, and the second electrode of the data write transistor T1-2 is connected to the second electrode of the storage capacitor Cst and / or the control end of the driving transistor T1-1.
[0065] The light emitting signal line EM is connected to the control end of the storage capacitor Cst reset transistor T1-4, and the light emitting signal line EM is connected to the control end of the light emitting control transistor T1-6. The first electrode of the driving transistor T1-1 is connected to the first power signal line EVDD, the second electrode of the driving transistor T1-1 is connected to the first electrode of the light emitting control transistor T1-6, the second electrode of the light emitting control transistor T1-6 is connected to the first electrode (e.g., anode) of the light emitting unit, and the second electrode of the light emitting unit is connected to the second power signal line EVSS (e.g., cathode).
[0066] Optionally, the first type transistor 11 may be a driving transistor T1-1. In some other embodiments, the first type transistor 11 may also be any one or more of a data writing transistor T1-2, a threshold compensation transistor T1-3, a storage capacitor reset transistor T1-4, a pixel electrode reset transistor T1-5, and a light emitting control transistor T1-6.
[0067] Optionally, the switch transistor may include a data write transistor T1-2, a threshold compensation transistor T1-3, a storage capacitor reset transistor T1-4, a pixel electrode reset transistor T1-5, and a light emission control transistor T1-6. Optionally, the second type of transistor includes one or more of the data write transistor T1-2, the threshold compensation transistor T1-3, the storage capacitor reset transistor T1-4, the pixel electrode reset transistor T1-5, and the light emission control transistor T1-6.
[0068] For example, Figure 6 As shown, taking 4T1C as an example, the pixel driving circuit includes a driving transistor T2-1, a data writing transistor T2-2, a first power writing transistor T2-3, a second power writing transistor T2-4 and a storage capacitor Cst. Specifically, each transistor has a control terminal, a first electrode and a second electrode, the control terminal is used to control whether the first electrode and the second electrode are turned on or off, and the storage capacitor Cst includes a first electrode plate and a second electrode plate opposite to each other.
[0069] Optionally, the first scan line Scan 3 is connected to the control end of the first power write transistor T2-3, the first electrode of the first power write transistor T2-3 is connected to the first power signal line EVDD, and the second electrode of the first power write transistor T2-3 is connected to the first electrode of the data write transistor T2-2. The data signal line is connected to the control end of the data write transistor T2-2, and the second electrode of the data write transistor T2-2 is connected to the second power signal line EVSS.
[0070] The second scan line Scan 4 is connected to the control end of the second power supply write transistor T2-4, the first electrode of the second power supply write transistor T2-4 is connected to the second electrode of the first power supply write transistor T2-3 and / or the first electrode of the data write transistor T2-2, and the second electrode of the second power supply write transistor T2-4 is connected to the first electrode plate of the storage capacitor Cst and / or the control end of the driving transistor T2-1. The first electrode of the driving transistor T2-1 is connected to the first power supply signal line EVDD, the second electrode of the driving transistor T2-1 is connected to the first electrode (e.g., anode) of the light-emitting unit, and the second electrode of the light-emitting unit is connected to the second power supply signal line EVSS (e.g., cathode). The second electrode plate of the storage capacitor Cst is connected to the second electrode of the driving transistor T2-1 and / or the second power supply signal line EVSS.
[0071] Optionally, the first type transistor 11 may be a driving transistor T2-1. In some other embodiments, the first type transistor 11 may also be any one or more of a data writing transistor T2-2, a first power writing transistor T2-3 and a second power writing transistor T2-4.
[0072] Optionally, the switch transistor may include a data write transistor T2-2, a first power write transistor T2-3, and a second power write transistor T2-4. Optionally, the second type of transistor includes one or more of the data write transistor T2-2, the first power write transistor T2-3, and the second power write transistor T2-4.
[0073] In the embodiment of the present application, the above configuration is helpful to improve the reliability of the driving transistor and reduce the possibility that the display panel cannot emit light due to damage to the driving transistor.
[0074] like Figure 4 As shown, in some optional embodiments, the second type transistor 12 includes a first sub-transistor 122 arranged in the display area AA and a second sub-transistor 123 arranged in the non-display area NA, the first sub-transistor 122 includes a first sub-active layer, the second sub-transistor 123 includes a second sub-active layer, and the first sub-active layer and the second sub-active layer are arranged in the same layer and the same material.
[0075] Alternatively, the mobility of the first sub-active layer and the mobility of the second sub-active layer may be the same.
[0076] Optionally, the mobility of the first sub-active layer is greater than the mobility of the first active layer 111 .
[0077] Optionally, the mobility of the second sub-active layer is greater than the mobility of the first active layer 111 .
[0078] Optionally, the first sub-active layer and the first active layer 111 may also be provided in the same layer. Of course, the first sub-active layer and the first active layer 111 are made of different materials.
[0079] In the embodiment of the present application, by setting the first sub-active layer and the second sub-active layer on the same layer, it is beneficial to reduce the number of overall film layers of the display panel, thereby reducing the overall thickness of the display panel. The first sub-active layer and the second sub-active layer are set with the same material, so that the first sub-active layer and the second sub-active layer can be prepared by one preparation process, thereby improving production efficiency.
[0080] Figure 7 It is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application. Figure 8 It is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application. Fig. 9 It is a schematic diagram of a cross-sectional structure of another display panel provided in an embodiment of the present application.
[0081] like Figure 4 , Figures 7 to 9As shown, in some optional embodiments, the second type transistor 12 includes a first sub-transistor 122 arranged in the display area AA and a second sub-transistor 123 arranged in the non-display area NA, the first sub-transistor 122 includes a first sub-active layer, the second sub-transistor 123 includes a second sub-active layer, the second active layer 121 includes multiple sub-layers, the mobility of some sub-layers in the multiple sub-layers is greater than the mobility of another part of the sub-layers, and at least one of the first sub-active layer and the second sub-active layer includes multiple sub-layers.
[0082] Exemplarily, the second active layer 121 includes multiple sublayers, and the sublayer with high mobility in the multiple sublayers is a high-mobility sublayer, and the sublayer with low mobility is a low-mobility sublayer. It can be understood that the high mobility and low mobility here refer to the high mobility and low mobility of the multiple sublayers compared with each other, not that the low mobility is in one range and the high mobility is in another range. In some examples, the first sub-active layer may include a high-mobility sublayer and a low-mobility sublayer. The second sub-active layer only includes a high-mobility sublayer. In other examples, the first sub-active layer may include a high-mobility sublayer and a low-mobility sublayer. The second sub-active layer includes a high-mobility sublayer and a low-mobility sublayer. In other examples, the first sub-active layer includes a high-mobility sublayer. The second sub-active layer includes a high-mobility sublayer and a low-mobility sublayer. Optionally, the mobility of the low-mobility sublayer may be less than, equal to, or greater than the mobility of the first active layer 111.
[0083] like Figure 8 As shown, in some optional embodiments, the first active layer 111 is located between the second active layer 121 and the light-emitting functional layer 20, so that the first active layer 111 and the second active layer 121 are located in different film layers, thereby reducing the possibility of the preparation processes of the first active layer 111 and the second active layer 121 affecting each other and improving the reliability of the transistor.
[0084] like Figure 8 As shown, in some optional embodiments, the second active layer 121 includes a first sublayer 1211 and a second sublayer 1212, the first sublayer 1211 is located on the side of the second sublayer 1212 facing the light-emitting functional layer 20, and the mobility of the first sublayer 1211 is greater than the mobility of the second sublayer 1212.
[0085] Optionally, when the first active layer 111 is located between the second active layer 121 and the light-emitting functional layer 20, the second active layer 121 can be set to a multi-layer stacked structure, and the second active layer 121 includes a first sublayer 1211 and a second sublayer 1212. The mobility of the first sublayer 1211 is greater than the mobility of the second sublayer 1212, which is beneficial to improving the flexibility of the arrangement of the second active layer 121 and improving the stability of the second active layer 121.
[0086] Optionally, the orthographic projection of the first sublayer 1211 on the second sublayer 1212 is located within the second sublayer 1212 .
[0087] In some optional embodiments, the mobility of the second sublayer 1212 is equal to the mobility of the first active layer 111, so that the material of the second sublayer 1212 is the same as that of the first active layer 111, thereby reducing the manufacturing cost of the transistor.
[0088] like Fig. 9 As shown, in some optional embodiments, the second active layer 121 further includes a third sublayer 1213 , which is located on the side of the first sublayer 1211 facing away from the second sublayer 1212 , and the mobility of the first sublayer 1211 is greater than the mobility of the third sublayer 1213 .
[0089] Optionally, the second active layer 121 can be a three-layer stacked structure, the first sublayer 1211 is located between the third sublayer 1213 and the second sublayer 1212, and the third sublayer 1213 is located on the side of the first sublayer 1211 facing away from the second sublayer 1212. Since the mobility of the first sublayer 1211 is greater than the mobility of the third sublayer 1213, and the mobility of the first sublayer 1211 is greater than the mobility of the second sublayer 1212, the stability of the second sublayer 1212 and the third sublayer 1213 is stronger than the first sublayer 1211, and the second sublayer 1212 and the third sublayer 1213 can protect the first sublayer 1211 to reduce the impact of the subsequent preparation process on the first sublayer.
[0090] Optionally, the orthographic projection of the third sublayer 1213 on the first sublayer 1211 may be located within the first sublayer 1211 .
[0091] Optionally, in the direction from the second sub-layer 1212 to the third sub-layer 1213 , the thickness of the second active layer 121 may gradually decrease.
[0092] Optionally, the mobility of the third sublayer 1213 may be less than the mobility of the second sublayer 1212 to further improve the reliability of the second active layer 121. Further, the third sublayer 1213 may expose a portion of the first sublayer 1211, and the source and drain of the second type transistor 12 may be electrically connected to both the third sublayer 1213 and the first sublayer 1211 through vias. Further, the first sublayer 1211 may expose a portion of the second sublayer 1212, and the source and drain of the second type transistor 12 may be electrically connected to both the third sublayer 1213, the first sublayer 1211, and the second sublayer 1212 through vias.
[0093] In some optional embodiments, the mobility of the second sublayer 1212 is equal to the mobility of the third sublayer 1213 , so that the material of the second sublayer 1212 and the material of the third sublayer 1213 are the same, thereby reducing the manufacturing cost of the transistor.
[0094] In some optional embodiments, the mobility of the first active layer is less than or equal to 20 cm 2 / Vs, which is beneficial to improving the stability of the first active layer, thereby improving the reliability of the display panel.
[0095] Optionally, the mobility of the first active layer may be 1 cm 2 / Vs, 2cm 2 / Vs, 5cm 2 / Vs, 10cm 2 / Vs, 13cm 2 / Vs, 16cm 2 / Vs, 18cm 2 / Vs or 20cm 2 / Vs.
[0096] In some optional embodiments, the mobility of the second active layer is greater than or equal to 25 cm 2 / Vs, which is beneficial to improving the electron mobility of the second active layer, thereby improving the driving performance of the second type of transistor and improving the display performance of the display panel.
[0097] Optionally, the mobility of the first active layer may be 25 cm 2 / Vs, 30cm 2 / Vs, 32cm 2 / Vs, 35cm 2 / Vs, 38cm 2 / Vs, 42cm 2 / Vs, 48cm 2 / Vs, 50cm 2 / Vs, 60cm 2 / Vs, 80cm 2 / Vs or 100cm 2 / Vs.
[0098] Optionally, the mobility of the second active layer is greater than or equal to 50 cm 2 / Vs.
[0099] Fig.10 It is a structural schematic diagram of a display device provided in an embodiment of the present application.
[0100] The embodiment of the second aspect of the present application also provides a display device, including the display panel of any of the above-mentioned embodiments of the first aspect. Since the display device provided by the embodiment of the second aspect of the present application includes the display panel of any of the above-mentioned embodiments of the first aspect, the display device provided by the embodiment of the second aspect of the present application has the beneficial effects of the display panel of any of the above-mentioned embodiments of the first aspect, which will not be repeated here.
[0101] The display device in the embodiments of the present application includes but is not limited to mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles, and other devices with display functions.
[0102] Although the embodiments disclosed in this application are as above, the contents described are only embodiments adopted for facilitating the understanding of this application and are not intended to limit the present invention. Any technician in the technical field to which this application belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in this application, but the scope of protection of this application shall still be subject to the scope defined in the attached claims.
[0103] The above is only a specific implementation of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the replacement of other connection methods described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of the present application.
Claims
1. A display panel, characterized in that: include: An array substrate, comprising a first type of transistor and a second type of transistor, wherein the first type of transistor comprises a first active layer, the second type of transistor comprises a second active layer, and the mobility of the first active layer is smaller than the mobility of the second active layer; The light-emitting functional layer is arranged on the array substrate, the light-emitting functional layer comprises a light-emitting unit, and the first type of transistor is electrically connected to the light-emitting unit.
2. The display panel according to claim 1, characterized in that: The array substrate includes a pixel driving circuit and a functional circuit. The first type of transistors is arranged in the pixel driving circuit, and the second type of transistors is arranged in the functional circuit.
3. The display panel according to claim 1, characterized in that: The array substrate comprises a pixel driving circuit, and the first type of transistors and the second type of transistors are both arranged in the pixel driving circuit; Preferably, the pixel driving circuit comprises a driving transistor and a switching transistor, the first type of transistor comprises a driving transistor, and the second type of transistor comprises a switching transistor.
4. The display panel according to claim 1, characterized in that: The second type of transistor includes a first sub-transistor arranged in the display area and a second sub-transistor arranged in the non-display area, the first sub-transistor includes the first sub-active layer, the second sub-transistor includes the second sub-active layer, and the first sub-active layer and the second sub-active layer are arranged in the same layer and the same material.
5. The display panel according to claim 3, characterized in that: The second type of transistor includes a first sub-transistor arranged in the display area and a second sub-transistor arranged in the non-display area, the first sub-transistor includes the first sub-active layer, the second sub-transistor includes the second sub-active layer, the second active layer includes multiple sub-layers, the mobility of some sub-layers in the multiple sub-layers is greater than the mobility of another part of the sub-layers, and at least one of the first sub-active layer and the second sub-active layer includes multiple sub-layers.
6. The display panel according to claim 1, characterized in that: The first active layer is located between the second active layer and the light-emitting functional layer.
7. The display panel according to claim 1 or 6, characterized in that: The second active layer includes a first sublayer and a second sublayer, the first sublayer is located on a side of the second sublayer facing the light-emitting functional layer, and the mobility of the first sublayer is greater than the mobility of the second sublayer; Preferably, the mobility of the second sub-layer is equal to the mobility of the first active layer; Preferably, the second active layer further comprises a third sublayer, the third sublayer is located on a side of the first sublayer facing away from the second sublayer, and the mobility of the first sublayer is greater than the mobility of the third sublayer; Preferably, the mobility of the second sub-layer is equal to the mobility of the third sub-layer.
8. The display panel according to claim 1, characterized in that: The mobility of the first active layer is less than or equal to 20 cm 2 / Vs.
9. The display panel according to claim 1, characterized in that: The mobility of the second active layer is greater than or equal to 25 cm 2 / Vs; Preferably, the mobility of the second active layer is greater than or equal to 50 cm 2 / Vs.
10. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 1 to 9.