Light emitting device and display apparatus

Abstract

The invention provides a light-emitting device. The light-emitting device comprises a light-emitting main body and a slow-release structure which are arranged on a substrate, the light-emitting main body comprises a first electrode, a light-emitting function layer and a second electrode which are sequentially arranged in the direction away from the substrate. The orthographic projection of the slow-release structure on the substrate is overlapped with the orthographic projection of the light-emitting functional layer on the substrate, or the orthographic projection of the slow-release structure on the substrate surrounds the light-emitting functional layer; wherein the slow-release structure comprises acid molecules, the acid molecules can be released into the light-emitting functional layer, and the release rate ranges from 10 <-5 > cc / (m < 3 >. Day) to 1 cc / (m < 3 >. Day). The invention further provides a display device.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light emitting device and a display apparatus. Background Art

[0002] With the in-depth development of quantum dot technology, the research on electro-induced quantum dot light-emitting diodes (Quantum Dot Light Emitting Diodes, QLED) has become increasingly in-depth, and QLED devices have become the future trend of high-resolution display devices. Summary of the invention

[0003] In a first aspect, the present disclosure provides a light-emitting device, comprising a light-emitting body and a slow-release structure disposed on a substrate; wherein:

[0004] The light-emitting body comprises: a first electrode, a light-emitting functional layer, and a second electrode, which are arranged in sequence in a direction away from the base substrate;

[0005] The orthographic projection of the slow-release structure on the base substrate overlaps with the orthographic projection of the light-emitting functional layer on the base substrate, or the orthographic projection of the slow-release structure on the base substrate surrounds the light-emitting functional layer;

[0006] The sustained-release structure includes acid molecules, which can be released into the luminescent functional layer at a rate of 10 -5 ~1cc / (m 3 day).

[0007] In some embodiments, the sustained-release structure comprises an inert matrix, and the acid molecules are dispersed in the inert matrix.

[0008] In some embodiments, the inert matrix is ​​made of epoxy resin.

[0009] In some embodiments, the sustained-release structure comprises a plurality of porous polymer shells, wherein the porous polymer shells are coated with a material containing the acid molecules.

[0010] In some embodiments, the sustained-release structure further comprises packaging glue, and the plurality of porous polymer shells are doped in the packaging glue.

[0011] In some embodiments, the orthographic projection of the slow-release structure on the base substrate overlaps with the orthographic projection of the light-emitting functional layer on the base substrate, and the light-emitting device further includes an encapsulation layer covering the light-emitting body and the slow-release structure.

[0012] In some embodiments, the light-emitting device further comprises a packaging cover plate arranged opposite to the base substrate, the light-emitting body is arranged between the packaging cover plate and the base substrate, and the slow-release structure is connected between the packaging cover plate and the base substrate and surrounds the light-emitting functional layer.

[0013] In some embodiments, the light-emitting functional layer includes: a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer arranged in sequence in a direction away from the substrate;

[0014] The material of the electron transport layer includes zinc magnesium oxide, and the acid molecules include acrylic molecules; and / or the material of the electron transport layer includes zinc oxide, and the acid molecules include carbonate molecules.

[0015] In some embodiments, the light-emitting functional layer includes a quantum dot light-emitting layer.

[0016] In a second aspect, an embodiment of the present disclosure further provides a display device, comprising the above-mentioned light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0018] Figure 1 It is the brightness-time relationship curve of the light-emitting device.

[0019] Figure 2 It is a schematic diagram of a light-emitting device provided in some embodiments of the present disclosure.

[0020] Figure 3 Schematic diagram of a light-emitting device provided in some other embodiments of the present disclosure.

[0021] Figure 4 Schematic diagram of a light-emitting device provided in some other embodiments of the present disclosure.

[0022] Figure 5 Schematic diagram of a light-emitting device provided in some other embodiments of the present disclosure.

[0023] Figure 6 This is a brightness-time curve of a light-emitting device that undergoes forward aging.

[0024] Figure 7 1 is a brightness-time relationship curve of the light emitting device in the embodiment of the present disclosure.

[0025] Figure 8 The present invention is a flowchart of manufacturing a light-emitting device provided in some embodiments of the present disclosure.

[0026] Fig. 9 A schematic diagram of a display substrate provided in some embodiments of the present disclosure. DETAILED DESCRIPTION

[0027] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0029] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not represent any order, quantity or importance, but are only used to distinguish different components. Similarly, "including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0030] As used herein, "parallel" and "perpendicular" include the described situation and the situation similar to the described situation, and the range of the similar situation is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the error associated with the measurement of a specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°.

[0031] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0032] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0033] Figure 1 is the brightness-time relationship curve of the light-emitting device, such as Figure 1 As shown, the light emitting device itself will have an aging problem, that is, the brightness of the light emitting device will decrease as the light emitting time increases, and the life of the light emitting device is related to the aging speed of the light emitting device. For example, the time taken for the brightness of the light emitting device to decrease from the initial brightness to 95% of the initial brightness is defined as the life of the light emitting device. How to improve the life of the light emitting device has always been a concern in the field.

[0034] Figure 2 is a schematic diagram of a light emitting device provided in some embodiments of the present disclosure, Figure 3 is a schematic diagram of a light emitting device provided in some other embodiments of the present disclosure, Figure 4 is a schematic diagram of a light emitting device provided in some other embodiments of the present disclosure, Figure 5 Schematic diagram of a light emitting device provided in some other embodiments of the present disclosure. Figures 2 to 5 As shown, the light-emitting device includes: a light-emitting body 3 and a slow-release structure 4 arranged on a base substrate 11. The light-emitting body 3 is a main structure for emitting light, which includes: a first electrode 31, a light-emitting functional layer 30, and a second electrode 32 arranged in sequence in a direction away from the base substrate 11. One of the first electrode 31 and the second electrode 32 is an anode, and the other is a cathode. The slow-release structure 4 is arranged on the base substrate 11.

[0035] In some embodiments, the orthographic projection of the slow-release structure 4 on the base substrate 11 overlaps with the orthographic projection of the light-emitting functional layer 30 on the base substrate 11. Figures 2 to 4 As shown, at least a portion of the slow-release structure 4 is located on a side of the light-emitting body 3 away from the base substrate 11 ; or, at least a portion of the slow-release structure 4 is located between the light-emitting body 3 and the base substrate 11 .

[0036] In other embodiments, Figure 5As shown, the orthographic projection of the slow-release structure 4 on the base substrate 11 surrounds the light-emitting functional layer 30 .

[0037] The sustained-release structure 4 includes acid molecules, which can be released into the light-emitting functional layer 30 at a rate of 10 -5 ~1cc / (m 3 ·day). The release rate is the release rate at room temperature and pressure. The acid molecules in the slow-release structure 4 are used to promote the balance of different carriers in the light-emitting device, so that the light-emitting device undergoes positive aging. Figure 6 is the brightness-time relationship curve of the light emitting device undergoing forward aging, where: Figure 6 The corresponding light-emitting device includes a light-emitting body and an encapsulation layer covering the light-emitting body, the encapsulation layer contains acidic molecules, and the acidic molecules in the encapsulation layer are released to the light-emitting body at a fast rate, at (1,1000]cc / (m 3 day) range, see Figure 6 As shown in Figure 1, the forward aging problem refers to the fact that during the initial lighting period of the light-emitting device, at a certain current density, the brightness of the light-emitting device increases over time, rather than decreasing directly with the increase of time. The process of the light-emitting device increasing from the initial brightness to the maximum brightness (i.e. Figure 6 The t1 stage in the figure is the forward aging process. After the forward aging process, the brightness of the light-emitting device will decrease with time.

[0038] When the light emitting device has serious forward aging, that is, when the difference between the maximum brightness and the initial brightness is too large, the initial brightness is unstable. In this case, if the light emitting device is used in a display screen, it is not conducive to the color adjustment process of the screen, and it is not conducive to the pre-aging treatment of the screen before leaving the factory. In addition, when the light emitting device has serious forward aging, it is also accompanied by the problem of poor morphology of the light emitting functional layer 30, thereby aggravating the attenuation of the light emitting performance.

[0039] In the embodiment of the present disclosure, the slow-release structure 4 can release acid molecules into the light-emitting functional layer 30, so that the light-emitting device undergoes a certain positive aging process; and because the release rate of the acid molecules is low, within 10 -5 ~1cc / (m 3 ·day), so it will not cause serious forward aging problems. For the light-emitting device disclosed in the present invention, its brightness-time is as follows Figure 7 As shown, it is equivalent to Figure 1 and Figure 6 The curves in are superimposed, thereby reducing the brightness decay rate and extending the life of the light-emitting device.

[0040] In some embodiments, Figure 2 and Figure 5 As shown, the first electrode 31 is an anode, the second electrode 32 is a cathode, and the light-emitting functional layer 30 includes: a hole injection layer 33, a hole transport layer 34, a light-emitting layer 35, and an electron transport layer 36 which are sequentially arranged in a direction away from the base substrate 11.

[0041] The substrate 11 may be a rigid substrate or a flexible substrate, wherein the rigid substrate may be, but not limited to, one or more of glass and metal foil; the flexible substrate may be, but not limited to, one or more of polyethylene terephthalate, polyethylene terephthalate, polyetheretherketone, polystyrene, polyarylate, polyarylate, polyimide, polyvinyl chloride, polyethylene, and textile fiber. The substrate 11 does not contain acid molecules.

[0042] The light-emitting layer 35 may be a quantum dot light-emitting layer. Specifically, the quantum dots in the quantum dot light-emitting layer may be selected from one or more of doped or undoped II-V compound semiconductors, III-V compound semiconductors, IV-VI compound semiconductors, and core-shell structures thereof. The quantum dots may be selected from one or more of doped or undoped inorganic perovskite semiconductors and organic-inorganic hybrid perovskite semiconductors.

[0043] Specifically, the structure of the inorganic perovskite semiconductor is AMX3, where A is Cs + ion, M is a divalent metal cation, which may be but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Fe 2+ One of the following, X is a halogen anion, which may be but is not limited to Cl - Br - ,I - In one embodiment, the structure of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, which may be, but is not limited to, CH3(CH2) n-2 NH3 + or NH3 + (CH2) n NH3 2+ , M is a divalent metal cation, which may be but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Fe 2+ One of the following, X is a halogen anion, which may be but is not limited to Cl - Br- ,I - One of them.

[0044] Optionally, the hole injection layer 33 includes poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate PEDOT:PSS, which is not limited in the embodiment of the present disclosure.

[0045] Optionally, the hole transport layer 34 includes: a maturely applied organic semiconductor material, such as: polyvinyl carbazole PVK, etc., which is not limited in any way in the embodiments of the present disclosure.

[0046] Optionally, the light-emitting device is a bottom-emitting device. In this case, the material of the first electrode 31 is a transparent conductive material, and the material of the second electrode 32 is a reflective material. Specifically, the transparent conductive material includes: one or more of indium tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, etc., and the embodiments of the present disclosure do not impose any restrictions on this. The material for making the second electrode 32 can be, but is not limited to, one or more of various conductive carbon materials, conductive metal oxide materials, and metal materials; wherein the conductive carbon can be, but is not limited to, at least one of doped or undoped carbon nanotubes, doped or undoped graphene, doped or undoped graphene oxide, graphite, carbon fiber, and porous carbon; the conductive metal oxide material can be, but is not limited to, at least one of fluorine-doped tin oxide, antimony-doped tin oxide, and aluminum-doped zinc oxide; the metal material can be, but is not limited to, at least one of aluminum, silver, copper, molybdenum, and gold.

[0047] Of course, the light emitting device may also be a top light emitting device. In this case, the material of the second electrode 32 is a transparent conductive material, and the material of the first electrode 31 is a reflective material, which will not be described in detail here.

[0048] like Figures 2 to 4 As shown, at least a portion of the slow-release structure 4 is located on the side of the second electrode 32 away from the substrate 11, thereby facilitating the manufacture of the slow-release structure 4. In a specific device structure, there are more electrons than holes in the light-emitting functional layer 30, and at least a portion of the slow-release structure 4 is disposed on the side of the second electrode 32 away from the substrate 11, so that the acidic molecules in the slow-release structure 4 can be released into the electron transport layer 36, and the conductivity of the electron transport layer 36 can be reduced through mechanisms such as chemical reactions, thereby reducing the number of electrons in the light-emitting functional layer 30, which is conducive to the balance of different carriers in the light-emitting functional layer 30.

[0049] In one example, the material of the electron transport layer 36 includes zinc magnesium oxide (ZnMgO), and the acid molecules in the sustained-release structure 4 include acrylic molecules, which can react with zinc magnesium oxide to reduce the amount of electrons.

[0050] In another example, the material of the electron transport layer 36 includes zinc oxide (ZnO), and the acid molecules in the sustained-release structure 4 include carbonic acid molecules, which can react with zinc oxide to reduce the amount of electrons, which is beneficial to the carrier balance in the light-emitting functional layer 30.

[0051] Of course, in other examples, the material of the electron transport layer 36 may include zinc magnesium oxide and zinc oxide at the same time, and the acid molecules in the sustained-release structure 4 may include at least one of acrylic acid molecules and carbonic acid molecules.

[0052] In some embodiments, Figure 2 and Figure 3 As shown, the slow-release structure 4 includes an inert matrix 41, and acid molecules are dispersed in the inert matrix 41. The material of the inert matrix 41 should be selected from materials that will not cause positive aging of the light-emitting device. That is, the inert matrix 41 does not contain acid molecules. For example, the inert matrix 41 is made of epoxy resin.

[0053] It should be noted that the light-emitting device in the embodiment of the present disclosure can be a normal structure or an inverted structure, and the embodiment of the present disclosure does not limit this. Among them, when the cathode is arranged on the side of the anode away from the base substrate 11, the light-emitting device is a normal structure; when the cathode is arranged on the side of the anode close to the base substrate 11 (at this time, the hole injection layer 33, the hole transport layer 34, the light-emitting layer 35, and the electron transport layer 36 are arranged in a direction close to the base substrate 11), the light-emitting device is an inverted structure. Figures 2 to 5 The description is made by taking the light emitting device as an upright structure as an example.

[0054] In some embodiments, Figure 3 As shown, the orthographic projection of the slow-release structure 4 on the base substrate 11 overlaps with the orthographic projection of the light-emitting functional layer 30 on the base substrate 11. For example, the orthographic projection of the light-emitting functional layer 30 on the base substrate 11 can be located within the orthographic projection range of the slow-release structure 4 on the base substrate 11. The light-emitting device also includes an encapsulation layer 5 that covers the light-emitting body 3 and the slow-release structure 4. Encapsulating the light-emitting body 3 and the slow-release structure 4 means that a portion of the encapsulation layer 5 is arranged opposite to the top surface of the overall structure composed of the light-emitting body 3 and the slow-release structure 4, and another portion of the encapsulation layer 5 is arranged opposite to the side surface of the above-mentioned overall structure. For example, the encapsulation layer 5 can be an encapsulation cover plate, and a groove is arranged on the encapsulation cover plate, and the light-emitting body 3 and the slow-release structure 4 are located in the groove. For another example, the encapsulation layer 5 can be an encapsulation film, and the encapsulation film covers the top surface and the side surface of the above-mentioned overall structure.

[0055] in, Figure 3The encapsulation layer 5 in the packaging layer does not contain acid molecules. For example, when the encapsulation layer 5 is an encapsulation cover plate, the encapsulation cover plate can be a rigid cover plate or a flexible cover plate, wherein the rigid cover plate can be but not limited to one or more of glass and metal foil; the flexible cover plate can be but not limited to one or more of polyethylene terephthalate, polyethylene terephthalate, polyetheretherketone, polystyrene, polyarylate, polyarylate, polyimide, polyvinyl chloride, polyethylene, and textile fiber. For another example, when the encapsulation layer 5 is an encapsulation film, the encapsulation film can be made of epoxy resin.

[0056] In other embodiments, Figure 4 As shown, the sustained-release structure 4 includes a plurality of sustained-release microspheres 42, and the sustained-release microspheres 42 include a porous polymer shell and a material containing acid molecules coated in the porous polymer shell. The pores on the surface of the porous polymer shell are nanometer-sized, and their diameters can be between 1 and 1000 nm, thereby playing a sustained-release function for acid molecules. For example, the pore diameter is 1 to 100 nm, or 100 to 300 nm, or 300 to 500 nm, or 500 to 700 nm, or 700 to 1000 nm.

[0057] The sustained-release microspheres 42 may be micrometer-sized. For example, the diameter of the sustained-release microspheres 42 may be between 2 and 5 μm, or between 4 and 8 μm, or between 6 and 20 μm, or between 10 and 50 μm.

[0058] The material of the porous polymer shell may be polystyrene (PS), polyester material (eg, polylactic acid PLA), etc.

[0059] exist Figure 4 In the embodiment, the plurality of slow-release microspheres 42 may be on the side of the second electrode 32 away from the base substrate 11. The plurality of slow-release microspheres 42 may be evenly distributed or substantially evenly distributed on the second electrode 32, so that the plurality of slow-release microspheres 42 may evenly release acid molecules to each position of the light-emitting functional layer 30, thereby ensuring the uniformity of light emission at each position of the light-emitting device.

[0060] and Figure 3 Similarly, in Figure 4 In the embodiment, the light emitting device may also include: an encapsulation layer 5, the encapsulation layer 5 encapsulates a plurality of slow-release microspheres 42 and the light emitting body 3. The encapsulation layer 5 may be an encapsulation cover plate or an encapsulation film. Figure 4 In the embodiment, the encapsulation layer 5 is made of a material that does not contain acid molecules, such as an epoxy resin material.

[0061] In other embodiments, Figure 5As shown, the slow-release structure 4 includes the above-mentioned slow-release microspheres 42 and packaging glue 43, wherein the slow-release microspheres 42 are doped in the packaging glue 43; the packaging glue 43 doped with the slow-release microspheres 42 can simultaneously play the role of packaging and slow-release acid molecules into the light-emitting functional layer 30.

[0062] The packaging glue 43 may be an acid-free packaging glue, for example, an epoxy resin material.

[0063] like Figure 5 As shown, the light-emitting device may further include a packaging cover plate 6, a groove is provided on the packaging cover plate 6, a part of the light-emitting body 3 is located in the groove, and the slow-release structure 4 is arranged around the light-emitting body 3 and bonded to the packaging cover plate 6 and the base substrate 11. Alternatively, the packaging cover plate 6 may not be provided with a groove, in which case the slow-release structure 4 is arranged around the light-emitting body 3 and bonded to the packaging cover plate 6 to achieve a packaging effect.

[0064] Among them, when the light-emitting device includes a packaging cover plate 6, there will inevitably be a certain gap between the packaging cover plate 6 and the second electrode 32. At this time, the slow-release microspheres 42 in the packaging glue 43 release acid molecules outward, and the acid molecules penetrate into the light-emitting functional layer 30 in the form of gas molecules to improve the balance of carriers.

[0065] Of course, in other embodiments, when the slow-release microspheres 42 are doped in the encapsulation glue 43, the encapsulation cover plate 6 may not be provided, but a portion of the encapsulation glue 43 may be provided on a side of the light-emitting body 3 away from the base substrate 11, and the other portion may surround the light-emitting body 3, thereby directly utilizing the encapsulation glue 43 to achieve encapsulation of the light-emitting device.

[0066] Figure 8 is a flowchart of manufacturing a light emitting device provided in some embodiments of the present disclosure, such as Figure 8 As shown, the method for manufacturing the light emitting device includes:

[0067] S1. Form a light-emitting body 3 on a base substrate 11 . The light-emitting body 3 includes: a first electrode 31 , a light-emitting functional layer 30 , and a second electrode 32 , which are sequentially arranged in a direction away from the base substrate 11 .

[0068] S2, forming a slow-release structure 4 , wherein the orthographic projection of the slow-release structure 4 on the base substrate 11 overlaps with the orthographic projection of the light-emitting functional layer 30 on the base substrate 11 , or the orthographic projection of the slow-release structure 4 on the base substrate 11 surrounds the light-emitting functional layer 30 .

[0069] The sustained-release structure 4 includes acid molecules, which can be released into the light-emitting functional layer 30 at a rate of 10 -5 ~1cc / (m 3 day).

[0070] Taking the upright light-emitting device as an example, the step of forming the light-emitting body 3 includes: sequentially forming a first electrode 31, a hole injection layer 33, a hole transport layer 34, a light-emitting layer 35, an electron transport layer 36 and a second electrode 32 on the base substrate 11. The light-emitting layer 35 can be a quantum dot light-emitting layer 35.

[0071] In some embodiments, the step of forming the slow-release structure 4 may include: dispersing acid molecules in an inert material solution, and coating the solution on the surface of the second electrode 32 away from the substrate 11; and curing to form the slow-release structure 4, which includes an inert matrix 41 and acid molecules dispersed in the inert matrix 41. The inert matrix 41 may include, for example, an epoxy resin material.

[0072] In other embodiments, the step of forming the sustained-release structure 4 may include: preparing a solution containing a plurality of sustained-release microspheres 42, the sustained-release microspheres 42 including a porous polymer shell, and a material containing acid molecules encapsulated in the porous polymer shell; then, applying the solution containing the sustained-release microspheres 42 to the surface of the second electrode 32; and forming the sustained-release structure 4 after curing, the sustained-release structure 4 including a plurality of sustained-release microspheres 42.

[0073] In some further embodiments, the step of forming the slow-release structure 4 includes: preparing a plurality of slow-release microspheres 42, and mixing the plurality of slow-release microspheres 42 in a packaging glue; coating the packaging glue mixed with the slow-release microspheres 42 on a side of the second electrode 32 away from the base substrate 11, or coating around the light-emitting body 3 and connecting the base substrate 11 to the packaging cover; then, curing the packaging glue; the cured packaging layer and the slow-release microspheres 42 doped therein constitute a slow-release structure 4.

[0074] The embodiment of the present disclosure also provides a display substrate, which includes the above-mentioned light-emitting device. The display substrate may include a plurality of pixel areas, each pixel area is provided with the above-mentioned light-emitting device, and each light-emitting device can emit red light, green light, blue light or white light.

[0075] In some embodiments, the plurality of pixel regions may be divided into a plurality of pixel units, each pixel unit includes a plurality of pixel regions, and each pixel unit may include a light-emitting device emitting red light, a light-emitting device emitting green light, and a light-emitting device emitting blue light.

[0076] Fig. 9 Schematic diagram of a display substrate provided in some embodiments of the present disclosure, such as Fig. 9 As shown, the display substrate may include a plurality of pixel driving circuits in addition to the light emitting device, and each light emitting device is electrically connected to a pixel driving circuit, so as to emit light under the driving action of the pixel driving circuit. For example, the pixel driving circuit includes a plurality of thin film transistors 21 and capacitors.

[0077] like Fig. 9 As shown, the thin film transistor 21 includes a gate 211, an active layer 212, a source 213 and a drain 214. Taking the thin film transistor 21 as a top-gate thin film transistor, the active layer 212 is located between the gate 211 and the substrate 11. The material of the active layer 212 may include, for example, inorganic semiconductor materials (e.g., polycrystalline silicon, amorphous silicon, etc.), organic semiconductor materials, and oxide semiconductor materials. The active layer 212 includes a channel portion and a source connection portion and a drain connection portion located on both sides of the channel portion. The source connection portion is connected to the source 213 of the thin film transistor 21, and the drain connection portion is connected to the drain 214 of the thin film transistor 21. Both the source connection portion and the drain connection portion may be doped with impurities (e.g., N-type impurities or P-type impurities) with a higher impurity concentration than the channel portion. The channel portion is directly opposite to the gate electrode 211 of the thin film transistor 21 . When the voltage signal loaded on the gate electrode 211 reaches a certain value, a carrier path is formed in the channel portion, so that the source electrode 213 and the drain electrode 214 of the thin film transistor 21 are turned on.

[0078] The buffer layer BFL is disposed between the thin film transistor 21 and the base substrate 11 to prevent or reduce diffusion of metal atoms and / or impurities from the base substrate 11 into the active layer 212 of the transistor. The buffer layer BFL may include an inorganic material such as silicon oxide, silicon nitride and / or silicon oxynitride, and may be formed as a multi-layer or a single layer.

[0079] The first gate insulating layer GI1 is disposed on a side of the active layer 212 away from the substrate 11. The material of the first gate insulating layer GI1 may include silicon compounds and metal oxides. For example, the material of the first gate insulating layer GI1 includes silicon oxynitride, silicon oxide, silicon nitride, silicon oxycarbide, silicon carbide nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. In addition, the first gate insulating layer GI1 may be a single layer or a multilayer.

[0080] The gate electrode layer is arranged on a side of the first gate insulating layer GI1 away from the base substrate 11. The gate electrode layer includes the gate 211 of each thin film transistor and the first electrode plate of the capacitor. The material of the gate electrode layer may include, for example, metal, metal alloy, metal nitride, conductive metal oxide, transparent conductive material, etc. For example, the gate electrode layer may include gold, gold alloy, silver, silver alloy, aluminum, aluminum alloy, aluminum nitride, tungsten, tungsten nitride, copper, copper alloy, nickel, chromium, chromium nitride, molybdenum, molybdenum alloy, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, tin oxide, indium oxide, gallium oxide, indium tin oxide, indium zinc oxide, etc. The gate electrode layer may have a single layer or multiple layers.

[0081] The second gate insulating layer GI2 is disposed on a side of the gate electrode layer away from the base substrate 11, and the material of the second gate insulating layer GI2 may include, for example, a silicon compound, a metal oxide. For example, the material of the second gate insulating layer GI2 may include silicon oxynitride, silicon oxide, silicon nitride, silicon oxycarbide, silicon carbide nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. The second gate insulating layer GI2 may be formed as a single layer or multiple layers.

[0082] The second electrode plate (not shown) of the capacitor is disposed on a side of the second gate insulating layer GI2 away from the base substrate 11 , and its material may be the same as that of the first electrode plate, for details, refer to the conductive materials listed above.

[0083] The interlayer insulating layer ILD is disposed on the side of the second electrode plate of the capacitor away from the substrate 11. The material of the interlayer insulating layer ILD may include, for example, silicon compounds, metal oxides, etc. Specifically, the silicon compounds and metal oxides listed above may be selected and will not be described in detail here.

[0084] The source-drain conductive layer is arranged on a side of the interlayer insulating layer ILD away from the substrate 11. The first source-drain conductive layer may include a source 213 and a drain 214 of each transistor, the source 213 is electrically connected to the source connection portion, and the drain 214 is electrically connected to the drain connection portion. The source-drain conductive layer may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. For example, the source-drain conductive layer may be a single layer or multiple layers composed of a metal, such as Mo / Al / Mo or Ti / Al / Ti.

[0085] The passivation layer PVX is arranged on the side of the source-drain conductive layer away from the base substrate 11, and the material of the passivation layer PVX may include, for example, silicon oxynitride, silicon oxide, silicon nitride, etc. The planarization layer PLN is arranged on the side of the passivation layer PVX away from the base substrate 11, and the planarization layer PLN may be made of an organic insulating material, for example, the organic insulating material includes polyimide, epoxy resin, acrylic, polyester, photoresist, polyacrylate, polyamide, siloxane and other resin materials.

[0086] The pixel defining layer PDL is located on the side of the planarization layer PLN away from the base substrate 11, and the pixel defining layer PDL has a plurality of pixel openings, and each light-emitting device corresponds to a pixel opening. The first electrode of the light-emitting device can be electrically connected to the drain 214 of the thin film transistor 21 through a first via hole penetrating the planarization layer PLN and the passivation layer PVX. The orthographic projection of the first via hole on the base substrate does not overlap with the orthographic projection of the pixel opening on the base substrate to ensure that the portion of the first electrode exposed by the pixel opening is flat.

[0087] The second electrodes of the plurality of light-emitting devices may be connected to form a whole-layer structure.

[0088] Among them, when the slow-release structure includes an inert matrix and acid molecules dispersed in the inert matrix, the slow-release structures of multiple light-emitting devices can be formed into an integrated structure for easy production. Similarly, when the slow-release structure includes an encapsulating glue and slow-release microspheres mixed in the encapsulating glue, the encapsulating glue of multiple light-emitting devices can also be connected into an integrated structure.

[0089] The present disclosure also provides a display device, which includes the display substrate in the above embodiment. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.

[0090] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and substance of the present disclosure, and these modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A light emitting device, characterized in that: It includes a light-emitting body and a slow-release structure arranged on a substrate; wherein, The light-emitting body comprises: a first electrode, a light-emitting functional layer, and a second electrode, which are sequentially arranged in a direction away from the base substrate; The orthographic projection of the slow-release structure on the base substrate overlaps with the orthographic projection of the light-emitting functional layer on the base substrate, or the orthographic projection of the slow-release structure on the base substrate surrounds the light-emitting functional layer; The sustained-release structure includes acid molecules, which can be released into the luminescent functional layer at a rate of 10 -5 ~1cc / (m 3 day).

2. The light emitting device according to claim 1, characterized in that: The sustained-release structure comprises an inert matrix, and the acid molecules are dispersed in the inert matrix.

3. The light emitting device according to claim 2, characterized in that: The inert matrix is ​​made of epoxy resin material.

4. The light emitting device according to claim 1, characterized in that: The sustained-release structure comprises a plurality of porous polymer shells, wherein the porous polymer shells are coated with a material containing the acid molecules.

5. The light emitting device according to claim 4, characterized in that: The sustained-release structure further comprises packaging glue, and the plurality of porous polymer shells are doped in the packaging glue.

6. The light emitting device according to any one of claims 1 to 5, characterized in that: The orthographic projection of the slow-release structure on the base substrate overlaps with the orthographic projection of the light-emitting functional layer on the base substrate, and the light-emitting device further includes an encapsulation layer covering the light-emitting body and the slow-release structure.

7. The light emitting device according to any one of claims 1 to 5, characterized in that: The light emitting device further comprises a packaging cover plate arranged opposite to the base substrate, the light emitting body is arranged between the packaging cover plate and the base substrate, the slow-release structure is connected between the packaging cover plate and the base substrate and surrounds the light emitting functional layer.

8. The light emitting device according to any one of claims 1 to 5, characterized in that: The light-emitting functional layer includes: a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer, which are sequentially arranged in a direction away from the substrate; The material of the electron transport layer includes zinc magnesium oxide, and the acid molecules include acrylic molecules; and / or the material of the electron transport layer includes zinc oxide, and the acid molecules include carbonate molecules.

9. The light emitting device according to any one of claims 1 to 5, characterized in that: The light-emitting functional layer includes a quantum dot light-emitting layer.

10. A display device, characterized in that: A light emitting device comprising the light emitting device according to any one of claims 1 to 9.

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