Display panel, manufacturing method thereof and display device

Abstract

The embodiment of the invention provides a display panel, a manufacturing method thereof and a display device. The display panel comprises a substrate, a pixel definition layer, a process structure layer, an isolation structure and a display function layer comprising a plurality of light-emitting devices, the pixel definition layer comprises a pixel limiting part, the process structure layer is located on the side, away from the substrate, of the pixel limiting part, and the orthographic projection of the process structure layer on the substrate is located in the orthographic projection of the pixel limiting part on the substrate. The isolation structure is located on the side, away from the substrate, of the technological structure layer and comprises a first isolation layer, a second isolation layer and a third isolation layer which are sequentially arranged in a stacked mode, and the orthographic projection of the second isolation layer on the substrate is located in the orthographic projection of the first isolation layer on the substrate. The light-emitting device comprises a first electrode, a light-emitting function layer and a second electrode which are arranged in a stacked mode, and the second electrode is electrically connected with the first isolation layer. According to the embodiment of the invention, the flatness of the pixel limiting part can be improved, and the film formation of the electrode layer is facilitated, so that the display effect of the display panel is ensured.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of display technology, and in particular, to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Organic Light Emitting Display (OLED) and flat-panel display devices based on technologies such as Light Emitting Diode (LED) have the advantages of high image quality, power saving, thin body and wide application range, and are widely used in various consumer electronic products such as mobile phones, televisions, laptops, desktop computers, etc., becoming the mainstream in display devices. In the preparation process of traditional display panels, the graphicization of luminous pixels is usually achieved through a fine metal mask (FMM). FMM technology is mature and has rich experience in mass production. However, FMM technology also has problems such as limited accuracy, high development cost, and long development cycle. The non-fine metal mask technology eliminates the limitations of traditional OLED processes on display screen size, resolution and other screen performance, and has the advantages of high performance, full-domain size, and agile delivery. Patents CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A record relevant contents of the non-fine metal mask technology for reference.

[0003] However, the process performance of current OLED display products needs to be improved. Summary of the invention

[0004] In view of this, embodiments of the present application provide a display panel and a manufacturing method thereof, and a display device to at least partially solve the above problems.

[0005] According to a first aspect of an embodiment of the present application, a display panel is provided. The display panel includes a substrate, a pixel definition layer, a process structure layer, an isolation structure and a display function layer. The pixel definition layer is located on one side of the substrate, and the pixel definition layer includes a pixel definition portion and a plurality of pixel openings formed by the pixel definition portion. The process structure layer is located on the side of the pixel definition portion away from the substrate, and the orthographic projection of the process structure layer on the substrate is located within the orthographic projection of the pixel definition portion on the substrate. The isolation structure is located on the side of the process structure layer away from the substrate, and the isolation structure encloses to form an isolation opening, and the isolation opening is connected to the pixel opening. The isolation structure includes a first isolation layer, a second isolation layer and a third isolation layer stacked in sequence in a direction away from the substrate, and the orthographic projection of the second isolation layer on the substrate is located within the orthographic projection of the first isolation layer on the substrate. The display function layer is located on the substrate and includes a plurality of light-emitting devices at least partially located in the pixel opening, and the light-emitting device includes a first electrode, a light-emitting function layer and a second electrode stacked in a direction away from the substrate. The second electrode is electrically connected to the first isolation layer.

[0006] In some embodiments, the orthographic projection of the isolation structure on the substrate covers the orthographic projection of the process structure layer on the substrate.

[0007] In some embodiments, an orthographic projection of the process structure layer on the substrate is located within an orthographic projection of the first isolation layer on the substrate.

[0008] In some embodiments, the second electrode is electrically connected to the first isolation layer and the second isolation layer.

[0009] In some embodiments, an orthographic projection of the first isolation layer on the substrate is located within an orthographic projection of the pixel defining portion on the substrate.

[0010] In some embodiments, the material of the first isolation layer is titanium nitride, and / or the material of the process structure layer is molybdenum.

[0011] In some embodiments, the thickness of the process structure layer is less than the thickness of the first isolation layer.

[0012] In some embodiments, an orthographic projection of the second isolation layer on the substrate is located above an orthographic projection of the third isolation layer on the substrate.

[0013] In some embodiments, the shortest distance between a boundary of an orthographic projection of the third isolation layer on the substrate and a boundary of an orthographic projection of the second isolation layer on the substrate is 0.3-1 μm.

[0014] In some embodiments, along a direction perpendicular to the substrate, a height of the second isolation layer is greater than that of the first isolation layer, and a height of the second isolation layer is greater than that of the third isolation layer.

[0015] In some embodiments, the display panel further includes a first encapsulation layer located on a side of the display function layer away from the substrate.

[0016] According to the second aspect of the embodiment of the present application, a method for manufacturing a display panel is provided. The method for manufacturing a display panel includes: providing a substrate. Forming a pixel definition layer; the pixel definition layer is located on one side of the substrate, and the pixel definition layer includes a pixel definition portion and a plurality of pixel openings formed by the pixel definition portion. Forming a process protection layer; the process protection layer is located on the side of the pixel definition layer away from the substrate. Forming an isolation structure; the isolation structure is located on the side of the process protection layer away from the substrate, and the isolation structure includes a first isolation layer, a second isolation layer, and a third isolation layer, the first isolation layer is formed by a dry etching process, the second isolation layer is formed by a wet etching process, and the first isolation layer, the second isolation layer, and the third isolation layer are stacked in sequence in a direction away from the substrate; the orthographic projection of the second isolation layer on the substrate is located within the orthographic projection of the first isolation layer on the substrate. Wet etching the process protection layer to form a process structure layer. Forming a display function layer; the display function layer is located on the substrate and includes a plurality of light-emitting devices at least partially located in the pixel openings, the light-emitting devices include a first electrode, a light-emitting function layer, and a second electrode stacked in a direction away from the substrate, and the second electrode is electrically connected to the first isolation layer.

[0017] In some embodiments, the process protection layer is wet-etched to form a process structure layer, wherein the orthographic projection of the process structure layer on the substrate is within the orthographic projection of the first isolation layer on the substrate.

[0018] In some embodiments, the material of the initial first isolation layer is titanium nitride, the material of the initial second isolation layer is aluminum, the material of the initial third isolation layer is titanium, and the material of the process protection layer is molybdenum.

[0019] According to a third aspect of the embodiments of the present application, a display device is provided, which includes the display panel in any one of the above embodiments.

[0020] According to the solution provided by the embodiment of the present application, a process protection layer is first formed, and then an isolation structure is formed. A wet etching process is used to form a second isolation layer, and a dry etching process is used to form a first isolation layer. The process protection layer plays a role in protecting the pixel defining portion in the process of forming the first isolation layer. Even if the dry etching process is over-etched, it will only cause a depression to form on the upper surface of the process protection layer, and will not damage the pixel defining portion, thereby ensuring the flatness of the surface of the pixel defining portion. Then, a wet etching process is used to form a process structure layer. When forming the second electrode, the flatness of the part of the second electrode on the pixel defining portion is better, which is conducive to the film formation of the electrode layer, so that the light-emitting device can emit light normally, thereby ensuring the display effect of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0022] Figure 1 This is a schematic diagram of an exemplary structure of a display device according to an embodiment of the present application;

[0023] Figure 2 This is a schematic diagram of an exemplary structure of a display panel according to an embodiment of the present application;

[0024] Figure 3 for Figure 2 Enlarged view of point A in the middle;

[0025] Figure 4 for Figure 3 A cross-sectional view taken along section line B1-B2;

[0026] Figure 5 is a schematic diagram of an exemplary structure of a portion of a display panel in some embodiments;

[0027] Figure 6a and Figure 6b A schematic diagram of some steps of forming an isolation structure in some embodiments;

[0028] Figure 7 A flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0029] Figure 8-Figure 20 1 is a structural diagram corresponding to each step in a method for manufacturing a display panel according to some embodiments. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the embodiments of the present application should fall within the scope of protection of the embodiments of the present application.

[0031] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms of "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in the embodiments of the present application refers to and includes any or all possible combinations of one or more associated listed items.

[0032] It should be understood that in the description of the embodiments of the present application, the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the schemes of the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0033] In addition, when an element or layer is referred to as being “on,” “connected to,” or “coupled to” another element or layer, the element or layer may be directly on, directly connected to, or directly coupled to the other element or layer, or intervening elements or layers may be present. However, when an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0034] The terms first, second, etc. are used to describe various elements, components, regions, layers and / or parts, but these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer and / or part from another element, component, region, layer and / or part.

[0035] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0036] The specific implementation of the embodiment of the present application is further explained below in conjunction with the accompanying drawings of the embodiment of the present application.

[0037] Figure 1 This is a schematic diagram of an exemplary structure of a display device according to an embodiment of the present application.

[0038] See also Figure 1 , an embodiment of the present application provides a display device 1000. The display device 1000 is an electronic device having an image (including: static image or dynamic image, wherein the dynamic image may be a video) display function. For example, the display device 1000 may be any one of a display, a television, a billboard, a digital photo frame, a laser printer with a display function, a telephone, a mobile phone, a personal digital assistant (PDA), a digital camera, a portable camcorder, a viewfinder, a navigator, a large-area wall, a home appliance, an information query device (such as business query devices of e-government, banks, hospitals, power and other departments), a monitor, an electronic painting screen, a virtual reality (VR) display device, an augmented reality (AR) display device and a vehicle-mounted display, but is not limited thereto.

[0039] Continue to see Figure 1 The display device 1000 may include a display panel 100, wherein, depending on the display principle, the display panel may be any one of an organic light emitting diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, a micro light emitting diode (Mini LED or Micro LED) display panel and a liquid crystal display (LCD) panel. The embodiments of the present disclosure do not limit the display panel.

[0040] Figure 2 This is a schematic diagram of an exemplary structure of a display panel according to an embodiment of the present application. Figure 3 for Figure 2 Enlarged view of point A in the middle.

[0041] For the convenience of the following description, an XYZ coordinate system is established. Figure 2 The third direction Z represents the thickness direction of the display panel 100 (or the thickness direction of the display device), and the first direction X and the second direction Y are perpendicular to each other and are both perpendicular to the third direction Z.

[0042] See also Figure 2 The display panel 100 has a display area AA and a non-display area SA, wherein the display area AA is an area on the display panel 100 for displaying images, and the non-display area SA is an area on the display panel 100 other than the display area AA. The non-display area SA may be located on at least one side (e.g., one side, or multiple sides) of the display area AA, for example, the non-display area SA may be arranged around the display area AA.

[0043] The display area AA includes a plurality of pixel units P. Figure 3 , each pixel unit P includes a plurality of sub-pixels 101, and the sub-pixel 101 is the smallest unit for displaying a picture in the display panel 100. The luminous colors of the plurality of sub-pixels 101 are different. Exemplarily, each pixel unit P includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The first sub-pixel, the second sub-pixel, and the third sub-pixel emit three primary colors of light respectively. For example, the first sub-pixel can emit red light, the second sub-pixel can emit green light, and the third sub-pixel can emit blue light. The arrangement of the plurality of sub-pixels 101 in the display area AA can be any arrangement such as a standard RGB arrangement, a Delta pixel arrangement, a Pentile arrangement, a diamond-like arrangement, etc.

[0044] Figure 4 for Figure 3 A cross-sectional view taken along section line B1-B2.

[0045] See also Figure 4 The display panel 100 includes a substrate 10 , a display function layer, a pixel definition layer 20 and an isolation structure (VSS) 40 .

[0046] The substrate 10 includes a base substrate 11. The base substrate 11 supports other structures in the display panel 100. The base substrate 11 can be set according to actual needs. Exemplarily, the base substrate 11 can be a rigid substrate, and the material of the rigid substrate can be glass or polymethyl methacrylate (PMMA). Exemplarily, the base substrate 11 can be a flexible substrate, and the material of the flexible substrate can be polyethylene terephthalate (PET), polyethylene naphthalatetwo formic acid glycol ester (PEN), ultra-thin glass or polyimide (PI).

[0047] The substrate 10 may further include a driving circuit layer 12, which is located on one side of the base substrate 11, coupled to a plurality of light-emitting devices (the light-emitting devices are described in detail below), and configured to provide an electrical signal to each light-emitting device so that the light-emitting device emits light of corresponding brightness. The driving circuit layer 12 includes a plurality of pixel driving circuits, each of which is electrically connected to a sub-pixel 101, and is used to drive the sub-pixel to emit light. The pixel driving circuit may include electronic components such as a plurality of transistors and capacitors. For example, the pixel driving circuit may include three transistors and one capacitor to form a 3T1C (i.e., one driving transistor, two switching transistors and one capacitor), and may also include more than three transistors and at least one capacitor, such as a 4T1C (i.e., one driving transistor, three switching transistors and one capacitor), a 5T1C (i.e., one driving transistor, four switching transistors and one capacitor), or a 7T1C (i.e., one driving transistor, six switching transistors and one capacitor), etc. Among them, the transistor may be a thin film transistor (TFT), a field effect transistor (MOS), or other switching devices with the same characteristics.

[0048] The pixel definition layer 20 is located on one side of the substrate 10. The pixel definition layer 20 includes a pixel definition portion 21 and a plurality of pixel openings 22 formed by the pixel definition portion 21, that is, the surface of the pixel definition layer 20 away from the substrate 10 has a plurality of openings.

[0049] The display function layer is located on the substrate 10, and includes a plurality of light-emitting devices 50 at least partially (e.g., partially, or entirely) located in the pixel opening 22. The light-emitting device 50 is an electronic device that can emit light, and one light-emitting device 50 corresponds to one sub-pixel, and one light-emitting device 50 corresponds to one pixel opening 22. The light-emitting device 50 can be any one of an OLED device, a QLED device, an LED device, and a micro light-emitting diode (Mini LED or Micro LED) device. The light-emitting device 50 includes a first electrode 51, a light-emitting function layer 52, and a second electrode 53 that are sequentially stacked in a direction away from the substrate 10. Among them, the first electrode 51 is located on one side of the substrate 10, and one first electrode 51 corresponds to one pixel opening 22, and the pixel opening 22 exposes a portion of the corresponding first electrode 51, and the pixel defining portion 21 covers the gap between adjacent first electrodes 51. The light-emitting function layer 52 covers the exposed first electrode 51, and the side of the light-emitting function layer 52 close to the substrate 10 is connected to the first electrode 51, and the side away from the substrate 10 is connected to the second electrode 53. Either the first electrode 51 or the second electrode 53 is an anode, and the other is a cathode. Exemplarily, the first electrode 51 is an anode and the second electrode 53 is a cathode. Exemplarily again, the first electrode 51 is a cathode and the second electrode 53 is an anode. The structure of the first electrode 51 may be a composite structure composed of a transparent conductive oxide film / metal film / transparent conductive oxide film stacked in sequence. The material of the transparent conductive oxide film may be, for example, any one of indium tin oxide (ITO) and indium zinc oxide (IZO), and the material of the metal film may be, for example, any one of gold (Au), silver (Ag), aluminum (AL), aluminum neodymium (ALNd), molybdenum (Mo), titanium (Ti), nickel (Ni) and platinum (Pt). The structure of the first electrode may also be a single-layer structure, and the material of the single-layer structure may be any one of ITO, IZO, Au, Ag, Ni, and Pt. The second electrode 53 is closer to the light-emitting surface of the display panel 100 than the first electrode 51, so the second electrode 53 is a light-emitting side electrode. The material of the second electrode 53 may include a transparent conductive oxide, such as ITO or IZO. The light-emitting functional layer 52 may include a light-emitting layer and a functional material layer. For example, the functional material layer may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL), which may be configured according to actual needs, and this embodiment does not limit this.

[0050] The isolation structure 40 is located on the side of the pixel definition layer 20 away from the substrate 10, and is used to isolate the light-emitting functional layer 53 of the adjacent light-emitting device 50. Specifically, the isolation structure 40 is located on the side of the pixel definition portion 21 away from the substrate 10. The isolation structure 40 can be a multi-layer structure. Exemplarily, the isolation structure 40 includes a first isolation layer 41, a second isolation layer 42, and a third isolation layer 43 stacked in sequence in a direction away from the substrate 10. The orthographic projection of the second isolation layer 42 on the substrate 10 is located within the orthographic projection of the first isolation layer 41 on the substrate 10, that is, the second isolation layer 42 is retracted compared to the first isolation layer 41, and the first isolation layer 41 is expanded compared to the second isolation layer 42, and a portion of the surface of the side of the first isolation layer 41 away from the substrate 10 (hereinafter referred to as the upper surface of the first isolation layer 41) is not covered by the second isolation layer 42. In this way, the second electrode 53 can be connected to the side wall and a portion of the upper surface of the first isolation layer 41, increasing the contact area between the second electrode 53 and the first isolation layer 41, so that the contact area between the second electrode 53 and the isolation structure 40 is increased, the impedance is reduced, and under the same voltage, the current becomes larger, so that the brightness of the light-emitting device 50 is increased, thereby improving the display effect of the display panel 100.

[0051] The materials between adjacent layers of the isolation structure 40 are different. Specifically, the materials of the first isolation layer 41 and the second isolation layer 42 are different, and the materials of the second isolation layer 42 and the third isolation layer 43 are different. For example, the material of the first isolation layer 41 is titanium nitride, the material of the second isolation layer 42 is aluminum, and the material of the third isolation layer 43 is titanium. The isolation structure 40 is formed by an etching process. Exemplarily, an initial first isolation layer, an initial second isolation layer, and an initial third isolation layer are formed in sequence, and the initial third isolation layer is etched to form the third isolation layer 43, the initial second isolation layer is etched to form the second isolation layer 42, and the initial first isolation layer is etched to form the first isolation layer 41.

[0052] The isolation structure 40 encloses and forms a plurality of isolation openings. The isolation openings are connected to the pixel openings 21, and the light emitting device 50 is surrounded by the isolation structure 40. The isolation structure 40 is electrically connected to the light emitting device 50, and specifically, the first isolation layer 41 is electrically connected to the second electrode 53. For example, continue to refer to Figure 4 Along the first direction X, the left and right sides of the light emitting device 50 are respectively provided with isolation structures 40, and the left and right sides of the second electrode 53 are respectively connected to the isolation structures 40 on both sides.

[0053] In some other examples, the second isolation layer 42 and the first isolation layer 41 are an integrated structure, that is, the integrated structure can be an independent film layer, and no physical interface exists in the film layer.

[0054] Figure 5 Schematic diagram of an exemplary structure of a portion of a display panel in some embodiments.

[0055] In some embodiments, a wet etching process (WE) is used to form the first isolation layer 41 and the second isolation layer 42. When the materials of the first isolation layer 41 and the second isolation layer 42 are etched by the same etching solution, due to their different materials (for example, the material of the first isolation layer 41 is molybdenum (Mo), and the material of the second isolation layer 42 is aluminum (Al)), the same etching solution has different etching speeds on the material of the first isolation layer 41 and the material of the second isolation layer 42 within the same etching time, and there is a problem of etching uniformity between the two, so that the first isolation layer 41 shrinks inward compared to the second isolation layer 42 (that is, the orthographic projection of the first isolation layer 41 on the substrate 10 is located within the orthographic projection of the second isolation layer 42 on the substrate).

[0056] In this way, when the second electrode 53 is formed, there is a gap between the second electrode 53 and the first isolation layer 41, resulting in the second electrode 53 not being connected to the first isolation layer 41. At this time, the second electrode 53 is only connected to the second isolation layer 42, or even the second isolation layer 42 and the first isolation layer 41 are not connected to the second electrode 53. In this way, the overlapping area between the second electrode 53 and the isolation structure 40 is reduced, the impedance is increased, and under the same voltage, the current becomes smaller, which reduces the brightness of the light-emitting device 50, thereby reducing the display effect of the display panel 100.

[0057] Figure 6a and Figure 6b FIG. 1 is a schematic diagram of some steps of forming an isolation structure in some embodiments.

[0058] In order to solve the above problems, some embodiments use different etching processes to form the second isolation layer 42 and the first isolation layer 41 respectively. Specifically, when the material of the initial first isolation layer is replaced by Mo with titanium nitride (TiN) and the initial second isolation layer is etched by WE process to form the second isolation layer 42, Mo and TiN have different corresponding etching solutions, and the etching solution that etches Mo will not etch TiN. Therefore, the second isolation layer 42 is first formed by etching with WE process using the etching solution that etches Mo, and then the first isolation layer 41 is formed by dry etching process (Dry Etch, DE). See Figure 6a Initially, the first isolation layer 401 covers the pixel defining portion 21 and the pixel opening 22, see Figure 6b The DE process removes a portion of the initial first isolation layer located at the bottom and side walls of the pixel opening 22 to expose the first electrode 51, and a portion of the initial first isolation layer located on the pixel defining portion 21 to expose a portion of the surface of the pixel defining portion 21 away from the substrate 10, to form a first isolation layer 41. At this time, the orthographic projection of the first isolation layer 41 on the substrate 10 is located within the orthographic projection of the pixel defining portion 21 on the substrate 10.

[0059] However, in the process of forming the first isolation layer 41 by the DE process, due to the limitation of the DE process, over-etching will occur, so that part of the material of the side surface of the pixel defining portion 21 away from the substrate 10 (hereinafter referred to as the upper surface of the pixel defining portion 21) is removed, resulting in a depression on the upper surface of the pixel defining portion 21 and reduced flatness. When the second electrode 53 is subsequently formed by vapor deposition, the second electrode 53 will break at the depression, resulting in poor continuity of the electrode film formation of the light-emitting device, causing the light-emitting device to be unable to emit light, thereby reducing the display effect of the display panel 100.

[0060] In order to solve the above problems, in the embodiment of the present application, the display panel 100 further includes a process structure layer 30. Figure 4 , the process structure layer 30 is located on the side of the pixel defining portion 21 away from the substrate 10. It can be understood that the process structure layer 30 is located between the pixel defining portion 21 and the isolation structure 40, and the isolation structure 40 is located on the side of the process structure layer 30 away from the substrate 10, that is, along the direction away from the substrate 10, the pixel defining portion 21, the process structure layer 30 and the isolation structure 40 are stacked in sequence.

[0061] The orthographic projection of the process structure layer 30 on the substrate 10 is located within the orthographic projection of the pixel defining portion 21 on the substrate 10. In this way, the process structure layer 30 does not overlap with the pixel opening 22, and the exposed area of ​​the light-emitting functional layer 52 located in the pixel opening 22 is as large as possible, and a part of the light-emitting functional layer 52 can also be located on the upper surface of the pixel defining portion 21, further increasing the orthographic projection area of ​​the light-emitting functional layer 52 on the substrate 10, thereby expanding the light-emitting area of ​​the light-emitting device 50 and improving the display effect of the display panel 100.

[0062] In the manufacturing process of the display panel 100, a process protection layer is first formed, and then an initial isolation structure is formed. The initial isolation structure includes an initial first isolation layer, an initial second isolation layer, and an initial third isolation layer stacked in sequence in a direction away from the process protection layer, and the third isolation layer 43, the second isolation layer 42, and the first isolation layer 41 are etched. Among them, the second isolation layer 42 is formed by the WE process, and the first isolation layer 41 is formed by the DE process. The process protection layer plays a role in protecting the pixel defining portion 21 in the DE process. Even if the DE is over-etched, only a concave is formed on the side surface of the process protection layer away from the substrate 10 (hereinafter referred to as the upper surface of the process protection layer), and the pixel defining portion 21 will not be damaged, thereby ensuring the flatness of the surface of the pixel defining portion 21. Then, the WE process is used to remove the process protection layer located at the bottom and side walls of the pixel opening 22 and part of the process protection layer located on the upper surface of the pixel defining portion 21, exposing the first electrode 51 and a part of the upper surface of the pixel defining portion 21, and the remaining process protection layer serves as the process structure layer 30. During this process, the exposed portion of the upper surface of the pixel defining portion 21 is relatively flat. When the second electrode 53 is subsequently formed by vapor deposition, a portion of the second electrode 53 formed on the pixel defining portion 21 has good flatness, which is beneficial to the formation of the electrode layer, so that the light-emitting device can emit light normally, thereby ensuring the display effect of the display panel 100.

[0063] In some embodiments, the orthographic projection of the first isolation layer 41 on the substrate 10 is located within the orthographic projection of the pixel defining portion 21 on the substrate 10. That is to say, the orthographic projection of the first isolation layer 41 on the substrate 10 is located within the orthographic projection of the pixel defining portion 21 on the substrate 10 corresponding to the isolation structure 40 where the first isolation layer 41 is located. In this way, a gap is left between the boundary of the side surface of the pixel defining portion 21 away from the substrate 10 and the boundary of the first isolation layer 41, and a portion of the second electrode 53 is located on the side surface of the pixel defining portion 21 away from the substrate 10 (the orthographic projection of the second electrode 53 on the substrate 10 overlaps with the orthographic projection of the side surface of the pixel defining portion 21 away from the substrate 10 on the substrate 10), so that the second electrode 53 can be electrically connected to the first isolation layer 41 on the upper surface of the pixel defining portion 21 to strengthen the connection effect between the second electrode 53 and the first isolation layer 41.

[0064] In some other examples, the orthographic projections of the first isolation layer 41 , the second isolation layer 42 , and the third isolation layer 43 on the substrate 10 may all be located within the orthographic projection of the pixel defining portion 21 corresponding to the isolation structure 40 on the substrate 10 .

[0065] In some embodiments, see Figure 4, the isolation structure 40 covers the process structure layer 30. Specifically, the orthographic projection of the process structure layer 30 on the substrate 10 is located within the orthographic projection of the isolation structure 40 on the substrate 10. In this way, the process structure layer 30 is retracted compared to the isolation structure 40, and along the first direction X, the edge of the isolation structure 40 is protruding at least on one side compared to the edge of the process structure layer 30. In this way, when the second electrode 53 is formed by evaporation, the position where the isolation structure 40 protrudes compared to the process structure layer 30 is easier to overlap with the second electrode 53 to ensure the connection effect between the second electrode 53 and the isolation structure 40, so that the first electrode 51 and the second electrode 53 of the light-emitting device 50 can better excite the light-emitting functional layer 52 to emit light, so as to improve the display effect of the display panel 100.

[0066] In some embodiments, see Figure 4 , the orthographic projection of the process structure layer 30 on the substrate 10 is located within the orthographic projection of the first isolation layer 41 on the substrate 10. Specifically, there is a gap between the orthographic projection of the boundary of the process structure layer 30 on the substrate 10 and the orthographic projection of the first isolation layer 41 on the substrate 10, and the process structure layer 30 is retracted compared to the first isolation layer 41. In this way, when the second electrode 53 is formed by evaporation, the first isolation layer 41 expands outward compared to the process structure layer 30, so that the second electrode 53 is easier to connect with the first isolation layer 41 than the process structure layer 30, thereby ensuring the connection effect between the second electrode 53 and the first isolation layer 41, so as to improve the display effect of the display panel 100. Furthermore, the first isolation layer 41 is retracted compared to the second isolation layer 42, and a gap is left between the first isolation layer 41 and the pixel defining portion 21. When the light-emitting functional layer 52 is formed by vapor deposition, the light-emitting functional layer 52 can be located in the gap between the first isolation layer 41 and the pixel defining portion 21, thereby further increasing the orthographic projection area of ​​the light-emitting functional layer 52 on the substrate 10, thereby expanding the light-emitting area of ​​the light-emitting device 50 and improving the display effect of the display panel 100.

[0067] In some embodiments, see Figure 4 , the second electrode 53 is electrically connected to the first isolation layer 41 and the second isolation layer 42. That is to say, the second electrode 53 not only contacts the side wall and a part of the upper surface of the first isolation layer 41, but also contacts the side wall of the second isolation layer 42. The second electrode 53 contacts the first isolation layer 41 and the second isolation layer 42 at the same time, further increasing the contact area between the second electrode 53 and the isolation structure 40, which can further reduce the impedance. Under the same voltage, the current becomes larger, so that the light emitting brightness of the light emitting device 50 increases, thereby improving the display effect of the display panel 100.

[0068] In some embodiments, the material of the first isolation layer 41 is titanium nitride. In this way, the first isolation layer 41 can be formed by using the DE process, and during the etching process, only the interface between the initial first isolation layer and the process protection layer is etched, or the process protection layer is etched, which will not damage the pixel definition layer 20, so that the pixel definition layer 20 has better flatness, and when the second electrode 53 is subsequently formed, it is beneficial to the electrode layer film formation, thereby ensuring the display effect of the display panel 100.

[0069] In some embodiments, the material of the process structure layer 30 is Mo. Mo is resistant to dry etching, so that when forming the first isolation layer 41, the DE process can be used, and the process structure layer 30 will not be etched through, resulting in the flatness of the pixel defining portion 21 located below the process structure layer 30 being destroyed. In addition, the Mo material allows the process structure layer 30 to be formed by the WE process to maintain the flatness of the upper surface of the pixel defining portion 21. When the second electrode 53 is subsequently formed, a portion of the second electrode 53 located on the upper surface of the pixel defining portion 21 can maintain good flatness, so that the light-emitting device 50 can emit light normally.

[0070] In some embodiments, the thickness of the process structure layer 30 is less than or equal to the thickness of the first isolation layer 21. If the thickness of the process structure layer 30 is too large, more etching solution is required when forming the process structure layer 30, and the etching time will be longer, which will reduce the production efficiency of the display panel. In addition, if the thickness of the process structure layer 30 is small, the thickness of the display panel can be reduced to achieve a thinner display panel.

[0071] In some embodiments, the third isolation layer 43 covers the second isolation layer 42, and the first isolation layer 41 covers the second isolation layer 42. Specifically, in the orthographic projection on the substrate 10, the third isolation layer 43 covers the second isolation layer 42, and the first isolation layer 41 covers the second isolation layer 42. At this time, the isolation structure 40 is an I-shaped structure. Exemplarily, along the first direction X, one side boundary of the second isolation layer 42 is located within the boundary of the third isolation layer 43, and the other side boundary can coincide with the boundary of the third isolation layer 43, or it can be located within the boundary of the third isolation layer 43; one side boundary of the second isolation layer 42 is located within the boundary of the first isolation layer 41, and the other side boundary can coincide with the boundary of the first isolation layer 41, or it can be located within the boundary of the first isolation layer 41. In this way, the orthographic projections of the second isolation layer 42 and the first isolation layer 42 on the substrate 10 are both located within the third isolation layer 43, which can improve the isolation effect of the isolation structure 40.

[0072] In some embodiments, see Figure 4In the orthographic projection onto the substrate 10 , the shortest distance d1 between the boundary of the third isolation layer 43 and the boundary of the second isolation layer 42 is 0.3-1 μm, for example 0.3 μm, 0.4 μm, 0.7 μm, 0.8 μm, 1 μm, etc., to prevent the distance between the third isolation layer 43 and the second isolation layer 42 in the first direction X from being too short, thereby improving the isolation effect of the isolation structure 40 .

[0073] In some embodiments, see Figure 4 , the display panel 100 may further include a first encapsulation layer 60, which is located on the side of the display function layer away from the substrate 10. Exemplarily, the first encapsulation layer 60 is composed of a plurality of encapsulation units that respectively cover the isolation openings, and the first encapsulation layer 60 at least covers the light-emitting devices 50. The first encapsulation layer 60 forms a dense film (for example, a film having only a closed contour line) above these light-emitting devices 50 to prevent external water and oxygen from entering the light-emitting devices and protect the film layer of the light-emitting devices 50. In order to better achieve the sealing effect, the material of the first encapsulation layer 60 may include an inorganic insulating material, such as one or more of silicon oxide, silicon nitride, titanium oxide, etc. The first encapsulation layer 60 may be formed by a thin film deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD) or atomic layer deposition (ALD).

[0074] It should be noted that the first encapsulation layer 60 has an encapsulation effect on the light-emitting device, and therefore can also be called the first encapsulation layer (only one film layer is provided) or one of the first encapsulation layers (when there are multiple encapsulation film layers).

[0075] In some embodiments, along the direction perpendicular to the substrate 10, the height of the second isolation layer 42 is greater than the height of the first isolation layer 41, and the height of the second isolation layer 42 is greater than the height of the third isolation layer 43. If the height of the second isolation layer 42 is less than the first isolation layer, and less than the third isolation layer, the height of the second isolation layer 42 is too small, resulting in too small a film thickness of the first encapsulation layer 60 formed at the side wall of the isolation structure 40, which will result in failure to effectively protect the corresponding light-emitting device and other structures.

[0076] In some embodiments, see Figure 4, the display panel 100 may further include a second encapsulation layer 70 and a third encapsulation layer 80 to further enhance the encapsulation effect. The second encapsulation layer 70 is located on the side of the first encapsulation layer 60 away from the substrate 10, and the third encapsulation layer 80 is located on the side of the second encapsulation layer 70 away from the substrate 10, covering the isolation opening and the isolation structure 40. The second encapsulation layer 70 and the third encapsulation layer 80 can extend from the display area AA to the non-display area SA, and their contours are located in the non-display area SA. The second encapsulation layer 70 is an organic layer, and the third encapsulation layer 80 is an inorganic layer.

[0077] An embodiment of the present application also provides a method for manufacturing a display panel.

[0078] Figure 7 A flow chart of a method for manufacturing a display panel provided in an embodiment of the present application. Figure 8-Figure 20 1 is a structural diagram corresponding to each step in a method for manufacturing a display panel according to some embodiments.

[0079] The following is a schematic illustration of a method for manufacturing a display panel provided by some embodiments of the present disclosure in conjunction with the accompanying drawings.

[0080] S1. See Figure 8 , providing a substrate.

[0081] The substrate 10 may include a base substrate 11 and a driving circuit layer 12 . The specific structure and materials may refer to the above description and will not be described in detail here.

[0082] S2. Form a pixel definition layer.

[0083] The pixel definition layer 20 is located on one side of the substrate 10 . The pixel definition layer 20 includes a pixel definition portion 21 and a plurality of pixel openings 22 surrounded by the pixel definition portion 21 .

[0084] The step of forming the pixel definition layer 20 includes:

[0085] S21, see Fig. 9 , forming an initial pixel definition layer.

[0086] The initial pixel definition layer 201 is located on one side of the substrate 10 . The initial pixel definition layer 201 covers a plurality of first electrodes 51 .

[0087] S22, see Fig.10 , forming a pixel definition layer.

[0088] A pixel opening 22 is formed on the initial pixel definition layer 201 , and the remaining portion is a pixel defining portion 21 . The orthographic projection of each pixel opening 22 on the substrate 10 is located within the orthographic projection of the first electrode 51 on the substrate 10 .

[0089] S3, see Fig.11, forming a process protection layer 301.

[0090] The process protection layer 301 is located on a side of the pixel definition layer 20 away from the substrate 10, covering the pixel defining portion 21 and a plurality of pixel openings. The process protection layer 301 is made of a material that resists dry etching, such as Mo.

[0091] S4. Form an isolation structure.

[0092] The isolation structure 30 is located on the side of the process protection layer 301 away from the substrate 10. The isolation structure 30 includes a first isolation layer, a second isolation layer and a third isolation layer stacked in sequence in a direction away from the substrate 10. The second isolation layer is formed by a wet etching process, and the first isolation layer is formed by a dry etching process. The orthographic projection of the second isolation layer 42 on the substrate 10 is located within the orthographic projection of the first isolation layer 41 on the substrate 10.

[0093] The isolation structure 40 is formed, including:

[0094] S41, see Fig.12 , forming an initial first isolation layer 401. The initial first isolation layer 401 is located on a side of the process protection layer 301 away from the substrate 10. The material of the initial first isolation layer 401 is a material that can be processed by DE process, such as TiN.

[0095] S42, see Fig.13 , forming an initial second isolation layer 402. The initial second isolation layer 402 is located on the side of the initial first isolation layer 401 away from the substrate 10. The material of the initial second isolation layer 402 is a material that can be processed by WE process, such as Al, and the material of the initial second isolation layer 402 is different from that of the initial first isolation layer 401 and the process protection layer.

[0096] S43, see Fig.14 , forming an initial third isolation layer 403. The third isolation layer 403 is located on the side of the initial second isolation layer 402 away from the substrate 10. The material of the initial third isolation layer 403 is a material that can be processed by WE process, such as Ti. The material of the initial third isolation layer 403 is different from the material of the initial second isolation layer 402. During etching, the same etching solution has different etching rates for the initial third isolation layer 403 and the initial second isolation layer 402, thereby preventing over-etching. In some examples, the thickness of the initial second isolation layer 402 is greater than the thickness of the initial third isolation layer 403. During the etching process of the initial third isolation layer 403, under the same mask plate, the thickness of the initial second isolation layer 402 is large, which can prevent the etching solution from over-etching, resulting in the second isolation layer 402 and the third isolation layer 403 being the same size, thereby reducing the isolation effect of the isolation structure 40 formed subsequently.

[0097] S44, see Fig.15, a third isolation layer 43 is formed by a wet etching process.

[0098] Part of the initial third isolation layer 403 is removed, and the remaining part forms the third isolation layer 43. The third isolation layer 43 is located on the side of the pixel defining portion 21 away from the substrate 10. At this time, a part of the initial second isolation layer 402 may be removed by the etching solution. During the WE process, the same etching solution has different etching rates for the initial third isolation layer 403 and the initial second isolation layer 402. When the third isolation layer 43 is formed, the second isolation layer 42 is not formed at the same time.

[0099] S45, see Fig.16 , a second isolation layer 42 is formed by a wet etching process.

[0100] Part of the initial second isolation layer 402 is removed, and the remaining part forms the second isolation layer 42. The second isolation layer 42 is located between the third isolation layer 43 and the initial first isolation layer 401. In the process of forming the second isolation layer 42 by the WE process, the same etching solution has different etching rates for the initial first isolation layer 401 and the initial second isolation layer 402. In this way, when the second isolation layer 42 is formed, the first isolation layer 41 will not be formed at the same time. In the same time, the etching solution used in this step will not etch through the initial first isolation layer 401 and the process protection layer 301, resulting in the exposure of the pixel defining portion 21. When forming the second isolation layer 42, the same mask plate can be used. By increasing the etching time, the second isolation layer 42 is retracted compared to the third isolation layer 43 to improve the isolation effect of the isolation structure 30.

[0101] S46, see Fig.17 , a dry etching process is used to form the first isolation layer 41. The first isolation layer 41 is located between the second isolation layer 42 and the pixel defining portion 21. During the process of forming the first isolation layer 41 by the DE process, the process protection layer 301 is made of a different material from the initial first isolation layer 401. Even if the DE process over-etches and causes a notch to be formed on the process protection layer 302, the process protection layer 301 will not be etched through to form a notch on the upper surface of the pixel defining portion 21, thereby maintaining the flatness of the upper surface of the pixel defining portion 21. S627, see Fig.18 , a portion of the process protection layer 301 is removed by a wet etching process, and the remaining process protection layer forms a process structure layer 30. The process structure layer 30 is located between the pixel defining portion 21 and the first isolation layer 41. The wet etching process can maintain the flatness of the upper surface of the pixel defining portion 21, and no depression is formed on the upper surface of the pixel defining portion 21, so that when the second electrode 53 is subsequently formed, the second electrode 53 has good flatness on the pixel defining portion 21, and the light-emitting device can emit light normally. The orthographic projection of the formed first isolation layer 41 on the substrate 10 is located within the orthographic projection of the process structure layer 30 on the substrate.

[0102] In some embodiments, the material of the initial first isolation layer 401 is titanium nitride, the material of the initial second isolation layer 402 is aluminum, and the material of the process protection layer 301 is molybdenum. In the process of forming the third isolation layer 43 by a wet etching process, forming the second isolation layer 42 by a wet etching process, and forming the first isolation layer 41 by a dry etching process, over-etching can be prevented to affect the display effect.

[0103] S5. Forming a process structure layer.

[0104] See also Fig.18 , wet-etching the process protection layer 301 to form a process structure layer 30. The process structure layer 30 is located on the side of the pixel defining portion 21 away from the substrate 10. The structure and material of the process structure layer 30 can be found in the above description, and will not be repeated here.

[0105] S6. Forming a display function layer.

[0106] See also Fig.19 The display function layer is located on the substrate 10 and includes a plurality of light emitting devices 50 located in corresponding pixel openings 22; the light emitting device 50 includes a first electrode 51, a light emitting function layer 52, and a second electrode 53 stacked in a direction away from the substrate, and the second electrode 52 is electrically connected to the first isolation layer 41. The structure and materials of the display function layer can be found in the above description and will not be repeated here.

[0107] In some embodiments, the method for manufacturing a display panel further includes:

[0108] S7, forming a first encapsulation layer.

[0109] See also Fig. 20 The first encapsulation layer 60 is located on the side of the display function layer away from the substrate 10. The structure and material of the first encapsulation layer 60 can be found in the above description and will not be described again.

[0110] It should be noted that the light-emitting devices with different emitted lights are independently manufactured, but the film layer (evaporated film layer such as light-emitting functional layer, etc.) in each light-emitting device is evaporated on the entire surface of the display panel during evaporation. For example, the light-emitting device includes a first light-emitting device, a second light-emitting device and a third light-emitting device that emit light of different colors, wherein the first light-emitting device can emit red light, the second light-emitting device can emit green light and the third light-emitting device can emit blue light. During the preparation process, the first light-emitting device, the second light-emitting device and the third light-emitting device are prepared in sequence. When preparing the first light-emitting device, a first light-emitting device is formed in each pixel opening. A first encapsulation layer 60 is prepared on the display panel to cover the first light-emitting device, and then the first encapsulation layer 60 in part of the first opening and the second electrode and the light-emitting functional layer of the light-emitting device are removed. In this process, the first encapsulation layer 60 is used to protect the first light-emitting device in other pixel openings. Based on this method, the second light-emitting device and the third light-emitting device are prepared in sequence to finally form the first encapsulation layer 60.

[0111] In some examples, after the first encapsulation layer 60 is formed, the second encapsulation layer 70 and the second encapsulation layer 80 are formed on a side of the first encapsulation layer 60 away from the substrate 10 to provide further protection.

[0112] In the embodiment of the present application, a process protection layer is first formed, and then an initial isolation structure is formed. The second isolation layer 42 is formed by the WE process, and the first isolation layer 41 is formed by the DE process. The process protection layer plays a role in protecting the pixel defining portion 21 in the DE process. Even if DE is over-etched, only a depression is formed on the upper surface of the process protection layer, and the pixel defining portion 21 is not damaged, thereby ensuring the flatness of the surface of the pixel defining portion 21. Then, the process protection layer located at the bottom and sidewall of the pixel opening 22 and part of the process protection layer located on the upper surface of the pixel defining portion 21 are removed by the WE process, exposing the first electrode 51 and part of the upper surface of the pixel defining portion 21. The remaining process protection layer is used as the process structure layer 30. In this process, the exposed part of the upper surface of the pixel defining portion 21 is relatively flat. When the second electrode 53 is subsequently formed by evaporation, the part of the second electrode 53 formed on the pixel defining portion 21 has good flatness, which is conducive to the formation of the electrode layer, so that the light-emitting device emits light normally, thereby ensuring the display effect of the display panel 100.

[0113] The above implementation methods are only used to illustrate the embodiments of the present application, and are not limitations on the embodiments of the present application. Ordinary technicians in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application. Therefore, all equivalent technical solutions also belong to the scope of the embodiments of the present application. The scope of patent protection of the embodiments of the present application should be limited by the claims.

Claims

1. A display panel, characterized in that: include: substrate; A pixel definition layer is located on one side of the substrate; the pixel definition layer includes a pixel definition portion and a plurality of pixel openings formed by the pixel definition portion; A process structure layer is located on a side of the pixel defining portion away from the substrate, and an orthographic projection of the process structure layer on the substrate is located within an orthographic projection of the pixel defining portion on the substrate; an isolation structure, located on a side of the process structure layer away from the substrate, the isolation structure encloses an isolation opening, and the isolation opening is connected to the pixel opening; the isolation structure comprises a first isolation layer, a second isolation layer, and a third isolation layer stacked in sequence in a direction away from the substrate, and an orthographic projection of the second isolation layer on the substrate is located within an orthographic projection of the first isolation layer on the substrate; The display function layer is located on the substrate and includes a plurality of light-emitting devices at least partially located in the pixel opening; the light-emitting device includes a first electrode, a light-emitting function layer and a second electrode stacked in a direction away from the substrate; the second electrode is electrically connected to the first isolation layer.

2. The display panel according to claim 1, characterized in that: The orthographic projection of the isolation structure on the substrate covers the orthographic projection of the process structure layer on the substrate.

3. The display panel according to claim 2, characterized in that: The orthographic projection of the process structure layer on the substrate is located within the orthographic projection of the first isolation layer on the substrate.

4. The display panel according to claim 3, characterized in that: The second electrode is electrically connected to the first isolation layer and the second isolation layer.

5. The display panel according to claim 1, characterized in that: The orthographic projection of the first isolation layer on the substrate is located within the orthographic projection of the pixel defining portion on the substrate.

6. The display panel according to claim 1, characterized in that: The material of the first isolation layer is titanium nitride, and / or the material of the process structure layer is molybdenum.

7. The display panel according to claim 1, characterized in that: The thickness of the process structure layer is smaller than the thickness of the first isolation layer.

8. The display panel according to claim 1, characterized in that: The orthographic projection of the second isolation layer on the substrate is located within the orthographic projection of the third isolation layer on the substrate.

9. The display panel according to claim 8, characterized in that: The shortest distance between a boundary of an orthographic projection of the third isolation layer on the substrate and a boundary of an orthographic projection of the second isolation layer on the substrate is 0.3-1 μm.

10. The display panel according to claim 1, characterized in that: Also includes: The first encapsulation layer is located on a side of the display function layer away from the substrate.

11. The display panel according to claim 10, characterized in that: Along a direction perpendicular to the substrate, a height of the second isolation layer is greater than a height of the first isolation layer, and a height of the second isolation layer is greater than a height of the third isolation layer.

12. A method for manufacturing a display panel, characterized in that: include: providing a substrate; forming a pixel definition layer; The pixel definition layer is located on one side of the substrate, and the pixel definition layer includes a pixel definition portion and a plurality of pixel openings formed by the pixel definition portion; forming a process protection layer; the process protection layer is located on a side of the pixel definition layer away from the substrate; An isolation structure is formed; the isolation structure is located on a side of the process protection layer away from the substrate; the isolation structure comprises a first isolation layer, a second isolation layer and a third isolation layer, the first isolation layer is formed by a dry etching process, the second isolation layer is formed by a wet etching process, the first isolation layer, the second isolation layer and the third isolation layer are stacked in sequence in a direction away from the substrate; the orthographic projection of the second isolation layer on the substrate is located within the orthographic projection of the first isolation layer on the substrate; Wet etching the process protection layer to form a process structure layer; A display function layer is formed; the display function layer is located on the substrate and includes a plurality of light-emitting devices at least partially located in the pixel opening; the light-emitting device includes a first electrode, a light-emitting function layer and a second electrode stacked in a direction away from the substrate, and the second electrode is electrically connected to the first isolation layer.

13. The method for manufacturing a display panel according to claim 12, characterized in that: In the process protection layer formed by wet etching, the orthographic projection of the process structure layer on the substrate is located within the orthographic projection of the first isolation layer on the substrate.

14. The method for manufacturing a display panel according to claim 12 or 13, characterized in that: The material of the first isolation layer is titanium nitride, the material of the second isolation layer is aluminum, and the material of the process protection layer is molybdenum.

15. A display device, characterized in that: include: A display panel as claimed in any one of claims 1 to 11.

Images