Method and system for prolonging service life of nitrogen-oxygen sensor and storage medium

Abstract

The invention relates to the technical field of nitrogen-oxygen sensors, and discloses a method and system for prolonging the service life of a nitrogen-oxygen sensor and a storage medium, S1, a heating wire of a ceramic chip of the nitrogen-oxygen sensor is heated, and the temperature is stabilized at a set value; s2, the current heating wire temperature is output, and a ceramic chip pump unit control program is started; s3, monitoring a main pump electrode voltage V0 in the first cavity of the ceramic chip; s4, if V0gt; 1V, further heating the heating wire to increase the temperature of the heating wire; and S5, repeating the steps S2-S4 until V0 is less than or equal to 1V. When the voltage of the main pump electrode of the first cavity is about to break through a failure set value, the temperature of the heating wire of the ceramic chip is increased, the state that an existing ceramic chip is always in a constant working temperature is changed, the activity of functional layers such as the pump electrode and the zirconium oxide layer of the ceramic chip is improved, and therefore the oxygen pumping capacity of each cavity is enhanced; the voltage of each pump electrode, especially the voltage of the main pump electrode of the first chamber, is reduced, and the service life of the ceramic chip is prolonged, thereby prolonging the service life of the product.

Description

Technical Field

[0001] The present invention relates to the technical field of nitrogen oxygen sensors, and in particular to a method, a system and a storage medium for increasing the service life of a nitrogen oxygen sensor. Background Art

[0002] With the rapid development of the world economy, the number of cars in various countries continues to rise, and automobile exhaust emissions have caused huge environmental pollution, including NO x Pollution. The nitrogen oxide sensor can detect NO in automobile exhaust. x The nitrogen oxide sensor includes a ceramic chip and its controller.

[0003] The control logic of the nitrogen oxide sensor controlling the ceramic chip is: after the temperature of the heating wire is controlled at the set value, the pump unit control starts working, and the ceramic chip is always at the set constant temperature value. Then, after a long period of use, the oxygen ion conductivity of the ceramic chip decreases due to aging of the chip pump electrode and zirconium oxide layer, causing the oxygen pumping capacity of each chamber electrode of the ceramic chip to weaken, and the voltage of each chamber pump electrode continues to increase. Among them, the first chamber pumps the largest amount of oxygen, so the voltage of the main pump electrode of the first chamber increases most significantly. When the voltage value of the main pump electrode of the first chamber increases to the upper limit set by the controller, the nitrogen oxide sensor will fail and its life cycle will end.

[0004] In view of this, this application is hereby filed. Summary of the invention

[0005] Problems with the prior art: When the voltage value of the main pump electrode of the first chamber of the sensor ceramic chip increases to the upper limit set by the controller, the nitrogen oxygen sensor will fail and its life cycle will end. The present invention provides a method, system and storage medium for increasing the service life of the nitrogen oxygen sensor. When the voltage of the main pump electrode of the first chamber is about to exceed the failure setting value, the temperature of the ceramic chip heating wire is increased, so as to change the state of the existing ceramic chip always being at a constant operating temperature, increase the activity of the ceramic chip pump electrode, zirconium oxide layer and other functional layers, thereby enhancing the oxygen pumping capacity of each chamber, reducing the voltage of each pump electrode, especially the voltage of the main pump electrode of the first chamber, extending the service life of the ceramic chip, thereby increasing the product life.

[0006] The present invention is achieved through the following technical solutions: In a first aspect, the present invention provides a method for increasing the service life of a nitrogen oxide sensor, comprising the following steps: During the use of the nitrogen oxide sensor ceramic chip, the main pump electrode voltage V0 in the first chamber is monitored. If V0>1V, the heating wire temperature is increased.

[0007] In a specific embodiment, the specific steps of the method for increasing the service life of the nitrogen oxide sensor are as follows: S1, heating the heating wire of the ceramic chip of the nitrogen oxide sensor and stabilizing the temperature at a set value; S2, output the current heating wire temperature and start the ceramic chip pump unit control program; S3, monitoring the voltage V0 of the main pump electrode in the first chamber of the ceramic chip; S4, if V0>1V, further heat the heating wire to increase the temperature of the heating wire; S5, repeat steps S2~S4 until V0≤1V.

[0008] In a specific embodiment, in step S1, the setting value of the heating wire temperature is ≥800°C.

[0009] In a specific embodiment, in step S2, the specific method of the ceramic chip pump unit control program is: Output the current heating wire temperature T to the controller of the ceramic chip pump unit control program, and calculate the corresponding Nernst voltages U0, U1, and U2 when the oxygen concentrations in the first chamber, the second chamber, and the third chamber remain unchanged at the current temperature; According to the Nernst voltages U0, U1, U2 calculated at the current temperature, the magnitudes of the main pump electrode voltage V0, the auxiliary pump electrode voltage V1 and the measuring pump electrode voltage V2 are adjusted.

[0010] The principle of Nernst voltage controlling electrode voltage is as follows: In dynamic regulation, the electrode voltage V is adjusted by the PID algorithm so that the Nernst voltage U measured Stabilize to target value U target :

[0011] K P , K i , K d : Proportional, integral and differential coefficients of PID control.

[0012] Take the Nernst voltage U0 to adjust the main pump electrode voltage V0 as an example: The exhaust gas enters the main pump chamber, and the measured gas partial pressure P of the exhaust gas is relatively high, and the Nernst U0 is measured. measured Deviate from the target value U0; apply pump electrode voltage V0, pump out O2, reduce U0 measured value, so that U0 measured Stabilize to U0.

[0013] In a specific embodiment, the temperature of the heating wire is not higher than 950° C. When the temperature exceeds this value, it is difficult to reduce the voltage even if the temperature is further increased, and the chip may fail due to the excessive temperature.

[0014] In a specific embodiment, the oxygen concentration in the first chamber is 0.1 ppm, the oxygen concentration in the second chamber is 0.01 ppm, and the oxygen concentration in the third chamber is 0.001 ppm.

[0015] In a specific implementation, the calculation formula of the Nernst voltage is as follows: ; Among them, U is the Nernst voltage; R is the ideal gas constant; F is the Faraday constant; T is the temperature; P0 is the reference gas partial pressure; P is the measured gas partial pressure; U0 is the background electromotive force, which is independent of temperature.

[0016] In a specific implementation manner, the heating wire is heated by PWM pulses.

[0017] In a second aspect, the present invention provides a control system for increasing the service life of a nitrogen oxygen sensor, including a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module; The heating module is used to heat the ceramic chip heating wire; The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module; The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each chamber of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each corresponding chamber; The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, a signal is output to the heating module to further heat the heating wire.

[0018] In a third aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxygen sensor are implemented.

[0019] Compared with the prior art, the present invention has the following advantages and beneficial effects: The embodiments of the present invention provide a method, system and storage medium for increasing the service life of a nitrogen oxygen sensor. When the voltage of the main pump electrode of the first chamber is about to exceed the failure setting value, the temperature of the heating wire of the ceramic chip is increased, thereby changing the state of the existing ceramic chip always being at a constant operating temperature, increasing the activity of functional layers such as the ceramic chip pump electrode and zirconium oxide layer, thereby enhancing the oxygen pumping capacity of each chamber, reducing the voltage of each pump electrode, especially the main pump electrode voltage of the first chamber, extending the service life of the ceramic chip, and thus increasing the product life. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 The ceramic chip pump unit control logic provided by the present invention; Figure 2 A flow chart of a method for increasing the service life of a nitrogen oxygen sensor provided by an embodiment of the present invention; Figure 3 The volt-ampere characteristic curves of the chamber provided by the present invention under different oxygen contents. DETAILED DESCRIPTION

[0022] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The exemplary embodiments of the present invention and their description are only used to explain the present invention and are not intended to limit the present invention.

[0023] In the following description, a large number of specific details are set forth in order to provide a thorough understanding of the present invention. However, it is apparent to one of ordinary skill in the art that these specific details need not be employed to practice the present invention. In other embodiments, in order to avoid obscuring the present invention, well-known materials or methods are not specifically described.

[0024] Throughout the specification, references to "one embodiment," "an embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment of the present invention. Therefore, the phrases "one embodiment," "an embodiment," "an example," or "an example" appearing in various places throughout the specification do not necessarily all refer to the same embodiment or example. In addition, particular features, structures, or characteristics may be combined in one or more embodiments or examples in any suitable combination and / or subcombination. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0025] In the description of the present invention, the directions or positional relationships indicated by terms such as “front”, “rear”, “left”, “right”, “up”, “down”, “vertical”, “horizontal”, “high”, “low”, “inside” and “outside” are based on the directions or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limiting the scope of protection of the present invention.

[0026] At present, when the voltage value of the main pump electrode of the first chamber of the sensor ceramic chip increases to the upper limit set by the controller, the nitrogen oxygen sensor will fail and its life cycle will end. The present invention provides a method, system and storage medium for increasing the service life of the nitrogen oxygen sensor. When the voltage of the main pump electrode of the first chamber is about to exceed the failure setting value, by increasing the temperature of the ceramic chip heating wire, the state of the existing ceramic chip always being at a constant operating temperature is changed, the activity of functional layers such as the ceramic chip pump electrode and zirconium oxide layer is increased, thereby enhancing the oxygen pumping capacity of each chamber, reducing the voltage of each pump electrode, especially the voltage of the main pump electrode of the first chamber, extending the service life of the ceramic chip, thereby increasing the product life.

[0027] The present invention is achieved through the following technical solutions: In a first aspect, the present invention provides a method for increasing the service life of a nitrogen oxide sensor, comprising the following steps: During the use of the nitrogen oxide sensor ceramic chip, the main pump electrode voltage V0 in the first chamber is monitored. If V0>1V, the heating wire temperature is increased.

[0028] In a specific implementation, the method for increasing the service life of the nitrogen oxide sensor comprises the following specific steps: S1, heating the heating wire of the ceramic chip of the nitrogen oxide sensor and stabilizing the temperature at a set value; S2, output the current heating wire temperature and start the ceramic chip pump unit control program; S3, monitoring the voltage V0 of the main pump electrode in the first chamber of the ceramic chip; S4, if V0>1V, further heat the heating wire to increase the temperature of the heating wire; S5, repeat steps S2~S4 until V0≤1V.

[0029] In a specific embodiment, in step S1, the setting value of the heating wire temperature is ≥800°C.

[0030] In a specific embodiment, in step S2, the specific method of the ceramic chip pump unit control program is: Output the current heating wire temperature T to the controller of the ceramic chip pump unit control program, and calculate the corresponding Nernst voltages U0, U1, and U2 when the oxygen concentrations in the first chamber, the second chamber, and the third chamber remain unchanged at the current temperature; According to the Nernst voltages U0, U1, U2 calculated at the current temperature, the magnitudes of the main pump electrode voltage V0, the auxiliary pump electrode voltage V1 and the measuring pump electrode voltage V2 are adjusted.

[0031] The principle of Nernst voltage controlling electrode voltage is as follows: In dynamic regulation, the electrode voltage V is adjusted by the PID algorithm so that the Nernst voltage U measured Stabilize to target value U target :

[0032] K P , K i , K d : Proportional, integral and differential coefficients of PID control.

[0033] Take the Nernst voltage U0 to adjust the main pump electrode voltage V0 as an example: The exhaust gas enters the main pump chamber, and the measured gas partial pressure P of the exhaust gas is relatively high, and the Nernst U0 is measured. measured Deviate from the target value U0; apply pump electrode voltage V0, pump out O2, reduce U0 measured value, so that U0 measured Stabilize to U0.

[0034] In a specific embodiment, the temperature of the heating wire is not higher than 950° C. When the temperature exceeds this value, it is difficult to reduce the voltage even if the temperature is further increased, and the chip may fail due to the excessive temperature.

[0035] In a specific embodiment, the oxygen concentration in the first chamber is 0.1 ppm, the oxygen concentration in the second chamber is 0.01 ppm, and the oxygen concentration in the third chamber is 0.001 ppm.

[0036] In a specific implementation, the calculation formula of the Nernst voltage is as follows: ; Among them, U is the Nernst voltage; R is the ideal gas constant; F is the Faraday constant; T is the temperature; P0 is the reference gas partial pressure; P is the measured gas partial pressure; U0 is the background electromotive force, which is independent of temperature.

[0037] In a specific implementation manner, the heating wire is heated by PWM pulses.

[0038] In a second aspect, the present invention provides a control system for increasing the service life of a nitrogen oxygen sensor, including a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module; The heating module is used to heat the ceramic chip heating wire; The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module; The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each chamber of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each corresponding chamber; The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, a signal is output to the heating module to further heat the heating wire.

[0039] In a third aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxygen sensor are implemented.

[0040] Comparative Example This comparative example provides a nitrogen oxygen sensor, such as Figure 1 As shown, P0: the first chamber, also called the main pump chamber; P1: the second chamber, also called the auxiliary pump chamber; P2: the third chamber, also called the measuring pump chamber; V0: the main pump electrode voltage; V1: the auxiliary pump electrode voltage; V2: the measuring pump electrode voltage; IP0: the main pump current; IP1: the auxiliary pump current; IP2: the measuring pump current; U: the exhaust gas reference voltage; U0: the main pump chamber Nernst voltage; U1: the auxiliary pump chamber Nernst voltage; U2: the measuring pump chamber Nernst voltage; Ref: the air reference electrode; R H : Heating electrode; arrow indicates current, no meaning.

[0041] At present, the control logic of the ceramic chip pump unit is as follows: the ceramic chip works normally at a high temperature constant temperature of 800°C, the exhaust gas enters the first chamber through the diffusion channel, and under the action of the main pump electrode voltage V0, the oxygen concentration is adjusted to a concentration where the Nernst voltage is U0=400mV, that is, the oxygen concentration is 0.1ppm; the gas in the first chamber continues to diffuse to the second chamber through the diffusion channel, and under the action of the auxiliary pump voltage V1, the gas concentration is adjusted to a concentration where the Nernst voltage is U1=450mV, that is, the oxygen concentration is 0.01ppm, NO x The NO2 in the exhaust gas is decomposed into NO and O2; the exhaust gas diffuses to the third chamber, and under the action of the measuring pump voltage V2, the oxygen concentration is adjusted to a concentration where the Nernst voltage is U2=500mV, that is, the oxygen concentration is 0.001ppm. At this time, the NO gas in the exhaust gas is decomposed into N2 and O2 by the catalyst, and NO can be indirectly measured by measuring the limiting current IP2 of the measuring pump O2. x concentration.

[0042] When the oxygen concentration in the chamber is constant, the pump current increases with the applied voltage value. When the applied voltage value exceeds a certain value, the pump current of the ceramic chip no longer changes with the increase of the applied voltage and reaches a limit value, which is called the limiting current. Figure 3 Shown are the volt-ampere characteristic curves under different oxygen concentrations.

[0043] At this time, the ceramic chip is in normal service and working condition. As the ceramic chip ages, its oxygen pumping capacity continues to weaken, and the voltage of each pump electrode will continue to increase. When the voltage of the main pump electrode of the first chamber exceeds the set value, the nitrogen oxide sensor fails. The service life of the existing nitrogen oxide sensor is about 6000 hours. The main failure forms include chip aging, heating wire failure, sensor control circuit failure, etc.

[0044] Example 1 like Figure 1 and Figure 2As shown, this embodiment provides a method for increasing the service life of a nitrogen oxide sensor, which is specifically as follows: the automobile engine is started, the ceramic chip is preheated, and then the ceramic chip heating wire is heated by PWM pulse heating, and the PT resistance temperature is checked at the same time, and then the heating wire temperature is detected to be ≥800°C. If it has not been reached, heating is continued. If it has been reached, the current temperature T1 is output, and the ceramic chip pump unit control program is turned on. The ceramic chip works normally in the constant temperature T1 state, and the exhaust gas enters the first chamber through the diffusion channel. Under the action of the main pump voltage V0, the oxygen concentration is adjusted to a concentration where the Nernst voltage is U0=400mV, that is, the oxygen concentration is 0.1ppm; the gas in the first chamber continues to diffuse to the second chamber through the diffusion channel. Under the action of the auxiliary pump voltage V1, the gas concentration is adjusted to a concentration where the Nernst voltage is U1=450mV, that is, the oxygen concentration is 0.01ppm, NO x The NO2 in the exhaust gas is decomposed into NO and O2; the exhaust gas diffuses to the third chamber, and under the action of the measuring pump voltage V2, the gas concentration is adjusted to a concentration where the Nernst voltage is U2=500mV, that is, the oxygen concentration is 0.001ppm. At this time, the NO gas in the exhaust gas is decomposed into N2 and O2 by the catalyst, and the NO is indirectly measured by measuring the limiting current IP2 of the measuring pump O2. x concentration.

[0045] As time goes by, the chip continues to age, the oxygen ion conductivity of the zirconium oxide layer decreases, and the voltage of each pump electrode increases. When it is detected that the main pump electrode voltage V0 of the ceramic chip is greater than 1V, the PWM pulse heating further heats the ceramic chip heating wire to increase the heating wire temperature to T2, and returns the current T2 value to the ceramic chip pump unit control program for calculation. The oxygen concentration at the current temperature is 0.1ppm, 0.01ppm and 0.001ppm, and the corresponding Nernst voltages are U0, U1 and U2; the main pump electrode voltage V0, the auxiliary pump electrode voltage V1 and the measurement pump electrode voltage V2 are controlled according to the actual values ​​of the above parameters, and the main pump V0 is judged again. If V0>1V, the above heating wire temperature increase process is repeated; if V0≤1V, the heating wire temperature adjustment is completed, and the limiting current parameter IP2 is obtained, which is the indirect measurement of NO x The NOx sensor chip can continue to be used normally at the current increased temperature value, which extends the service life of the NOx sensor product.

[0046] After the chip can continue to be used normally for a period of time after the T value is improved, if it is monitored that V0>1V, the life of the chip can be further extended by heating, so that V0≤1V; when the temperature of the heating wire reaches the maximum power supply heating capacity limit of the control system or the set value of 950°C, the chip will fail due to excessive temperature and the life of the chip cannot be extended by heating.

[0047] The method of the present invention is mainly a life extension method for nitrogen oxide sensors that fail due to chip aging. Under the condition that the functional layer and heating wire material of the nitrogen oxide sensor chip are working normally, the control method of the present invention can increase the service life of the nitrogen oxide sensor by 10%.

[0048] As the temperature of the ceramic chip rises, the migration rate of oxygen ions in the ZrO2 electrolyte is enhanced, and the thermal motion of the gas molecules is intensified, thereby affecting the diffusion rate and diffusion coefficient of the gas. That is, when the oxygen concentration in the chamber is constant, the temperature of the ceramic chip will change the rate of increase of the volt-ampere characteristic curve, but will not change the size of its limit value. When the pump electrode voltage of each chamber of the ceramic chip exceeds a certain value, the pump current IP reaches the limit value, which is only related to the size of the O2 concentration and has nothing to do with factors such as temperature.

[0049] Example 2 The embodiment of the present invention provides a control system for increasing the service life of a nitrogen oxygen sensor, including a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module; The heating module is used to heat the ceramic chip heating wire; The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module; The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each chamber of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each corresponding chamber; The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, a signal is output to the heating module to further heat the heating wire.

[0050] Example 3 An embodiment of the present invention provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxygen sensor are implemented.

[0051] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for increasing the service life of a nitrogen oxide sensor, characterized in that: The steps include: During the use of the nitrogen oxide sensor ceramic chip, the main pump electrode voltage V0 in the first chamber is monitored. If V0>1V, the heating wire temperature is increased.

2. A method for increasing the service life of a nitrogen oxide sensor according to claim 1, characterized in that: The specific steps are as follows: S1, heating the heating wire of the ceramic chip of the nitrogen oxide sensor and stabilizing the temperature at a set value; S2, output the current heating wire temperature and start the ceramic chip pump unit control program; S3, monitoring the voltage V0 of the main pump electrode in the first chamber of the ceramic chip; S4, if V0>1V, further heat the heating wire to increase the temperature of the heating wire; S5, repeat steps S2~S4 until V0≤1V.

3. A method for increasing the service life of a nitrogen oxide sensor according to claim 2, characterized in that: In step S1, the setting value of the heating wire temperature is ≥800°C.

4. A method for increasing the service life of a nitrogen oxide sensor according to claim 2, characterized in that: The temperature of the heating wire is not higher than 950°C.

5. The method for increasing the service life of a nitrogen oxide sensor according to claim 2, characterized in that: In step S2, the specific method of the ceramic chip pump unit control program is: Output the current heating wire temperature T to the controller of the ceramic chip pump unit control program, and calculate the corresponding Nernst voltages U0, U1, and U2 when the oxygen concentrations in the first chamber, the second chamber, and the third chamber remain unchanged at the current temperature; According to the Nernst voltages U0, U1, U2 calculated at the current temperature, the magnitudes of the main pump electrode voltage V0, the auxiliary pump electrode voltage V1 and the measuring pump electrode voltage V2 are adjusted.

6. A method for increasing the service life of a nitrogen oxide sensor according to claim 5, characterized in that: The oxygen concentration in the first chamber is 0.1 ppm, the oxygen concentration in the second chamber is 0.01 ppm, and the oxygen concentration in the third chamber is 0.001 ppm.

7. The method for increasing the service life of a nitrogen oxide sensor according to claim 5, characterized in that: The calculation formula of the Nernst voltage is as follows: ； Among them, U is the Nernst voltage; R is the ideal gas constant; F is the Faraday constant; T is the temperature; P0 is the reference gas partial pressure; P is the measured gas partial pressure; U0 is the background electromotive force, which is independent of temperature.

8. The method for increasing the service life of a nitrogen oxide sensor according to claim 2, characterized in that: The heating wire is heated by PWM pulse.

9. A control system for increasing the service life of a nitrogen oxide sensor, characterized in that: It includes a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module; The heating module is used to heat the ceramic chip heating wire; The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module; The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each chamber of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each corresponding chamber; The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, a signal is output to the heating module to further heat the heating wire.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxygen sensor as claimed in any one of claims 1 to 8 are implemented.

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