Data storage system and method of intelligent electric energy meter

Abstract

According to the data storage system and method of the intelligent electric energy meter, when data is written into a DataFlash storage module, whether a storage error occurs or not is detected, an error identifier FLG represents an error correction process, correct data in an error sector is copied to an RAM cache region after the error occurs, the correct data is rewritten into the DataFlash storage module from the RAM cache region after the data in the error sector is cleared, and the data in the data sector is stored in the DataFlash storage module. If an error occurs during rewriting, the error sector data are cleared again and rewritten; compared with a conventional data storage scheme, the method has the advantages that the read-write speed is higher, the efficiency is higher in scenes needing to store a large amount of data, firmware upgrading, data log recording and the like, and damaged data can be quickly and accurately recovered.

Description

Technical Field

[0001] The present invention relates to the field of power data storage, and in particular to a data storage system and method for a smart electric energy meter. Background Art

[0002] Smart energy meters will obtain a large amount of power data. Flash storage is generally used for fast storage of large amounts of data. Flash memory can be divided into two categories according to its interface: serial and parallel. Serial Flash memory mostly uses I2C interface or SPI interface for reading and writing; compared with parallel Flash memory, it requires fewer pins, is small in size, is easy to expand, is simple to connect to a single-chip microcomputer or controller, and works reliably, so serial Flash memory is increasingly used in various electronic products and industrial measurement and control systems. DataFlash is a large-capacity serial Flash memory product manufactured using NOR technology and can be used to store data or program code.

[0003] The prior art invention patent with application publication number CN117331494A discloses a method and system for data storage management of an electric energy meter based on NAND Flash, including a frozen data storage management method and an event record storage management method, a cache space is opened in a third-party non-volatile memory FRAM to cache frozen data segments; when the cache space is filled with frozen data segments, a solidification command is triggered to take out the data in the cache space and solidify and store it in NAND Flash, after the solidification command is completed, the data in the entire cache space is cleared, and the frozen data segment cache is restarted; the event record storage management method uses several independent blocks of NAND Flash memory to store several records of a certain event in sequence, so that each independent block only stores one record of the event. The present invention provides a method for maximizing the service life of the NAND Flash storage chip in the electric energy meter under the premise of safely, orderly and reliably storing the meter data. Summary of the invention

[0004] DataFlash has a fast read speed and must be erased before writing. The minimum erase unit is 4Kbytes. Due to the high power consumption of DataFlash operation, it is generally only allowed to operate when the embedded system is powered on. This will lead to a risk that data will be lost or damaged in the event of power failure or unstable power supply. However, the existing DataFlash storage module does not have its own independent error correction mechanism.

[0005] In order to solve the above technical problems, the present invention provides a technical solution: a data storage method for a smart electric energy meter, comprising the following steps: S1, write the bulk data of the smart energy meter into the DataFlash storage module in units of sectors; S2, always monitor whether there is a storage error, and suspend writing when a storage error occurs; S3, read the correct data of the error sector and write it into the RAM buffer area; S4. Erase all data in the error sector, and then write the RAM buffer data back to the error sector.

[0006] Specifically, the DataFlash storage module uses sectors as the minimum unit for read, write and erase operations. The sector size is 4K bytes. The 4K sector is large enough to meet the storage requirements for different storage requirements. It can store small amounts of data such as software version numbers and instantaneous data, as well as large amounts of parameter data such as load curves and event records.

[0007] Specifically, when a direct storage error is found in S2, the error flag FLG is set to 1, and the error address is stored.

[0008] Specifically, after the error correction is completed in S4, the error flag FLG is set to 0, the data in the RAM buffer area is cleared, and subsequent data continues to be written into the DataFlash storage module. Redundant storage is used during use, and the RAM buffer area data is cleared in time to ensure the normal operation of the system.

[0009] Specifically, during use, direct data storage of the DataFlash storage module is performed only when the error flag FLG is 0. After erasing the error sector data in S4, the error flag FLG is set to 2 if a storage error occurs when writing the RAM cache data back to the error sector.

[0010] Specifically, when it is found in S2 that the error flag FLG is 2, step S3 is skipped without modifying the data in the RAM buffer area, and step S4 is directly performed to clear and rewrite the data in the error sector.

[0011] Specifically, a data storage system of a smart electric energy meter uses the above data storage method, including a power module, which supplies power to a main chip and a DataFlash storage module respectively, and data is exchanged between the main chip and the DataFlash storage module via a data line.

[0012] Specifically, the power module and the main chip are loaded in the smart energy meter, the power module is directly connected to the external mains, and the external power is transferred to the main chip and the DataFlash storage module through the power module to supply power respectively.

[0013] Specifically, the main chip controls the data storage to the DataFlash storage module; the main chip also includes a RAM cache area, and each smart energy meter is designed with sufficient RAM storage space in the main chip. The RAM cache area temporarily stores the correct data of the error sector copied from the DataFlash storage module when a write error occurs.

[0014] Specifically, the DataFlash storage module is a separate hardware design, which is independent of the smart electricity meter, making it easy to install on existing electricity meters or to disassemble and replace them, making it easier to repair or recover data.

[0015] The beneficial effects of the present invention are: providing an efficient data error correction system and method, which can quickly and accurately recover damaged data in DataFlash memory, reduce the risk of data damage and loss, and ensure data integrity and reliability. Compared with conventional data storage solutions, the read and write speeds are faster, especially for operations with large data blocks, which is suitable for quickly erasing large blocks of data and rewriting them, and is more efficient in scenarios that require storage of large amounts of data, firmware upgrades, data logging, etc. The system structure is flexible and can be adaptively adjusted according to the needs of different application scenarios to meet various data storage requirements. Each module of the system can be implemented independently, which is convenient for integration into existing data storage devices, reducing development and maintenance costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 The figure is a flow chart of the method of the present invention.

[0017] Figure 2 This is a system structure diagram of the present invention. DETAILED DESCRIPTION

[0018] The present invention is described in detail below with reference to the accompanying drawings and embodiments.

[0019] Embodiment 1: A data storage method for a smart electric energy meter comprises the following steps: S1, write the bulk data of the smart energy meter into the DataFlash storage module in units of sectors; S2, always monitor whether there is a storage error, and suspend writing when a storage error occurs; S3, read the correct data of the error sector and write it into the RAM buffer area; S4. Erase all data in the error sector, and then write the RAM buffer data back to the error sector.

[0020] The DataFlash storage module uses sectors as the smallest unit for read, write and erase operations, and the sector size is 4Kbyte. The 4K sector is large enough to meet the storage requirements for different storage requirements. It can store small amounts of data such as software version numbers and instantaneous data, as well as large amounts of parameter data such as load curves and event records. When a direct storage error is found in S2, the error flag FLG is set to 1 and the error address is stored.

[0021] After the error correction is completed in S4, the error flag FLG is set to 0, the data in the RAM buffer area is cleared, and subsequent data continues to be written into the DataFlash storage module.

[0022] During use, direct data storage of the DataFlash storage module is performed only when the error flag FLG is 0. After erasing the error sector data in S4, if a storage error occurs when the RAM cache data is written back to the error sector, the error flag FLG is set to 2.

[0023] When it is found in S2 that the error flag FLG is 2, step S3 is skipped without modifying the data in the RAM buffer area, and step S4 is directly performed to clear and rewrite the data in the error sector.

[0024] When the error flag FLG is 0, it means that there is no error in the storage process of the DataFlash storage module; when the error flag FLG is 1, it means that an error occurs in the storage process of the DataFlash storage module, and the error correction judgment branch is entered at this time; when the error flag FLG is 2, an error occurs when the temporary data in the RAM cache is rewritten into the error sector of the DataFlash storage module during the error correction process, and the correction branch of the error correction judgment branch is entered at this time. It is not necessary to read and copy the correct data of the error sector again, and the data in the RAM cache is not changed. It is only necessary to clear and rewrite the data in the error sector in the DataFlash storage module, which saves steps, speeds up the error correction speed, and does not lose data when writing data. If a write error occurs during the error correction process, the temporary data is copied to the RAM cache according to the processing method of the first error. If the RAM cache data is not cleared, duplicate data will appear, resulting in incorrect storage; or data address judgment is performed in the RAM cache, but this will increase the operation steps and affect the storage efficiency; if the data in the RAM cache is cleared, some data caused by storage errors during the error correction process will be lost. Therefore, the optimal solution for storage efficiency is to add an error flag to mark the current branch operation, and reset the error flag FLG to 0 after each error correction is completed.

[0025] A data storage system for a smart electric energy meter uses the above data storage method and includes a power module, which supplies power to a main chip and a DataFlash storage module respectively. The main chip and the DataFlash storage module exchange data via a data line.

[0026] Flash memory can be divided into two categories according to its interface: serial and parallel. Serial Flash memory mostly uses I2C interface or SPI interface for reading and writing; compared with parallel Flash memory, it requires fewer pins, is small in size, is easy to expand, is simple to connect to a single-chip microcomputer or controller, and works reliably, so serial Flash memory is increasingly used in various electronic products and industrial measurement and control systems.

[0027] DataFlash is a high-capacity serial Flash memory product manufactured using NOR technology and can be used to store data or program code.

[0028] DataFlash usually includes two basic concepts, namely Sector and Page. Sector is the smallest erase unit. DataFlash has the following characteristics: Non-volatility: Data in DataFlash can be permanently stored after power failure, which is in sharp contrast to volatile memories such as RAM; Flexibility: Users can store and read data in DataFlash according to their needs, providing great flexibility for the microcontroller; Reliability: DataFlash generally has high reliability and durability, and can meet the needs of various application scenarios.

[0029] The power module and the main chip are installed in the smart energy meter. The power module is directly connected to the external mains power, and the external power is transferred to the main chip and the DataFlash storage module through the power module to supply power respectively.

[0030] The main chip controls the storage of data in the DataFlash storage module; the main chip also includes a RAM buffer area, which temporarily stores the correct data of the error sector copied from the DataFlash storage module when a write error occurs.

[0031] The DataFlash storage module is a separate hardware design and is independent of the smart energy meter. It is easy to install on existing energy meters or to disassemble and replace them for easy maintenance or data recovery.

[0032] Compared with conventional energy meter storage modules, such as EEPROM memory, DataFlash storage modules have faster read and write speeds, especially for large data block operations, suitable for quickly erasing large blocks of data and rewriting, and are more efficient in scenarios where large amounts of data need to be stored, firmware upgrades, data logging, etc. DATAFLASH is a type of flash memory, usually operated in pages. DataFlash allows erasing and writing operations by blocks or pages, and is suitable for storing large amounts of data (such as firmware, configuration files, etc.). EEPROM reads, writes, and erases in bytes, which is more flexible and allows single bytes to be written and erased. Compared with EEPROM, DataFlash has faster read and write speeds, especially for large data block operations, because of its page and block operation characteristics, it is suitable for quickly erasing large blocks of data and rewriting. Although EEPROM is more flexible because it can be operated by bytes, it needs to wait for a write cycle for each operation, so it is relatively slow.

[0033] The life of DataFlash is generally measured by the number of erase and write times of a block, which is usually between 10,000 and 100,000 times, depending on the specific device. Frequent erase and write operations may shorten its life. The erase and write life of each byte of EEPROM is usually 1 million times, so in high-frequency small data storage scenarios, EEPROM usually has a longer life. DataFlash usually consumes high power when performing erase and write operations, especially when erasing and writing large blocks of data. But the power consumption of read operations is low. Due to its byte-by-byte operation characteristics, EEPROM usually consumes relatively low power during read and write operations. Therefore, DataFlash is suitable for scenarios such as storing large amounts of data, firmware upgrades, and data logging. Due to its fast read and write characteristics, it is often used to store large amounts of data in embedded systems. EEPROM is suitable for storing small amounts of critical data, such as configuration parameters, calibration data, etc. Its byte-level operation flexibility makes it suitable for scenarios that require frequent small data updates. At the same time, DataFlash usually has a lower unit cost because it is more suitable for large-capacity storage applications. Although EEPROM has a smaller capacity, its unit cost may be relatively high due to its flexibility and high erase and write life. For large-volume data storage application scenarios such as smart electricity meters, using DataFlash can achieve better benefits and efficiency.

[0034] Embodiment 2: A data storage system for a smart electric energy meter includes a power module, which supplies power to a main chip and a DataFlash storage module respectively. The main chip and the DataFlash storage module exchange data via a data line.

[0035] Flash memory can be divided into two categories according to its interface: serial and parallel. Serial Flash memory mostly uses I2C interface or SPI interface for reading and writing; compared with parallel Flash memory, it requires fewer pins, is small in size, is easy to expand, is simple to connect to a single-chip microcomputer or controller, and works reliably, so serial Flash memory is increasingly used in various electronic products and industrial measurement and control systems.

[0036] DataFlash is a high-capacity serial Flash memory product manufactured using NOR technology and can be used to store data or program code.

[0037] The power module and the main chip are installed in the smart energy meter. The power module is directly connected to the external mains power, and the external power is transferred to the main chip and the DataFlash storage module through the power module to supply power respectively.

[0038] The main chip controls the storage of data in the DataFlash storage module; the main chip also includes a RAM buffer area, which temporarily stores the correct data of the error sector copied from the DataFlash storage module when a write error occurs.

[0039] The DataFlash storage module is a separate hardware design and is independent of the smart energy meter. It is easy to install on existing energy meters or to disassemble and replace them for easy maintenance or data recovery.

[0040] Compared with conventional energy meter storage modules, such as EEPROM memory, DataFlash storage modules have faster read and write speeds, especially for large data block operations, suitable for quickly erasing large blocks of data and rewriting, and are more efficient in scenarios where large amounts of data need to be stored, firmware upgrades, data logging, etc. DATAFLASH: A type of flash memory, usually operated in pages. DataFlash allows erasing and writing operations by blocks or pages, and is suitable for storing large amounts of data (such as firmware, configuration files, etc.). EEPROM reads, writes, and erases in bytes, which is more flexible and allows single bytes to be written and erased. Compared with EEPROM, DataFlash has faster read and write speeds, especially for large data block operations, because of its page and block operation characteristics, it is suitable for quickly erasing large blocks of data and rewriting. Although EEPROM is more flexible because it can be operated by bytes, it needs to wait for a write cycle for each operation, so it is relatively slow.

[0041] The life of DataFlash is generally measured by the number of erase and write times of a block, which is usually between 10,000 and 100,000 times, depending on the specific device. Frequent erase and write operations may shorten its life. The erase and write life of each byte of EEPROM is usually 1 million times, so in high-frequency small data storage scenarios, EEPROM usually has a longer life. DataFlash usually consumes high power when performing erase and write operations, especially when erasing and writing large blocks of data. But the power consumption of read operations is low. Due to its byte-by-byte operation characteristics, EEPROM usually consumes relatively low power during read and write operations. Therefore, DataFlash is suitable for scenarios such as storing large amounts of data, firmware upgrades, and data logging. Due to its fast read and write characteristics, it is often used to store large amounts of data in embedded systems. EEPROM is suitable for storing small amounts of critical data, such as configuration parameters, calibration data, etc. Its byte-level operation flexibility makes it suitable for scenarios that require frequent small data updates. At the same time, DataFlash usually has a lower unit cost because it is more suitable for large-capacity storage applications. Although EEPROM has a smaller capacity, its unit cost may be relatively high due to its flexibility and high erase and write life. For large-volume data storage application scenarios such as smart electricity meters, using DataFlash can achieve better benefits and efficiency.

[0042] ‌DataFlash has a fast reading speed and must be erased before writing. The minimum erase unit is 4Kbytes. The 4K sector is large enough to meet the storage requirements for different storage requirements. It can store small amounts of data such as software version numbers and instantaneous data, as well as large amounts of parameter data such as load curves and event records. Due to the high power consumption of DataFlash, it is generally only allowed to operate when the embedded system is powered on by AC. This will lead to a risk of data loss and damage in the event of power failure or unstable power supply.

[0043] When writing data to Dataflash, the reading and writing of the previous T0 and T1 sectors are correct and there is no problem; when writing to the T2A sector, if there is a sudden power failure or the external mains power is unstable, the power provided by the power supply is insufficient, resulting in errors during writing. Therefore, a data storage method is needed to correct the sector data where the Dataflash storage error occurs.

[0044] Therefore, for the data storage system of the smart electric energy meter, a data storage method of the smart electric energy meter is used, which includes the following steps: S1, write the bulk data of the smart energy meter into the DataFlash storage module in units of sectors; S2, always monitor whether there is a storage error, and suspend writing when a storage error occurs; S3, read the correct data of the error sector and write it into the RAM buffer area; S4. Erase all data in the error sector, and then write the RAM buffer data back to the error sector.

[0045] The DataFlash storage module performs read, write and erase operations in sectors as the smallest unit, and the sector size is 4Kbyte.

[0046] When a direct storage error is found in S2, the error flag FLG is set to 1 and the error address is stored.

[0047] After the error correction is completed in S4, the error flag FLG is set to 0, the data in the RAM buffer area is cleared, and subsequent data continues to be written into the DataFlash storage module.

[0048] During use, direct data storage of the DataFlash storage module is performed only when the error flag FLG is 0. After erasing the error sector data in S4, if a storage error occurs when the RAM cache data is written back to the error sector, the error flag FLG is set to 2.

[0049] When it is found in S2 that the error flag FLG is 2, step S3 is skipped without modifying the data in the RAM buffer area, and step S4 is directly performed to clear and rewrite the data in the error sector.

[0050] When the error flag FLG is 0, it means that there is no error in the storage process of the DataFlash storage module; when the error flag FLG is 1, it means that an error occurs in the storage process of the DataFlash storage module, and the error correction judgment branch is entered at this time; when the error flag FLG is 2, an error occurs when the temporary data in the RAM cache is rewritten into the error sector of the DataFlash storage module during the error correction process, and the correction branch of the error correction judgment branch is entered at this time. It is not necessary to read and copy the correct data of the error sector again, and the data in the RAM cache is not changed. It is only necessary to clear and rewrite the data in the error sector in the DataFlash storage module, which saves steps, speeds up the error correction speed, and does not lose data when writing data. If a write error occurs during the error correction process, the temporary data is copied to the RAM cache according to the processing method of the first error. If the RAM cache data is not cleared, duplicate data will appear, resulting in incorrect storage; or data address judgment is performed in the RAM cache, but this will increase the operation steps and affect the storage efficiency; if the data in the RAM cache is cleared, some data caused by storage errors during the error correction process will be lost. Therefore, the optimal solution for storage efficiency is to add an error flag to mark the current branch operation, and reset the error flag FLG to 0 after each error correction is completed.

[0051] Embodiment 3: A data storage system for a smart electric energy meter includes a power module, the power module supplies power to a main chip and a DataFlash storage module respectively, and data is exchanged between the main chip and the DataFlash storage module via a data line.

[0052] The power module and the main chip are installed in the smart energy meter. The power module is directly connected to the external mains power, and the external power is transferred to the main chip and the DataFlash storage module through the power module to supply power respectively.

[0053] The main chip controls the storage of data in the DataFlash storage module; the main chip also includes a RAM buffer area, which temporarily stores the correct data of the error sector copied from the DataFlash storage module when a write error occurs.

[0054] The DataFlash storage module is a separate hardware design and is independent of the smart energy meter. It is easy to install on existing energy meters or to disassemble and replace them for easy maintenance or data recovery.

[0055] DataFlash has high power consumption, so it is usually only allowed to operate when the embedded system is powered on. This will lead to a risk of data loss and damage in the event of power failure or unstable power supply.

[0056] Therefore, a data storage method for a smart electric energy meter is designed to detect data storage errors in real time and correct them in real time during use.

[0057] First, set the parameter error flag FLG to indicate whether a data storage error occurs and the progress of the error correction process. The initial value of the error flag FLG is 0. The DataFlash storage module performs read, write and erase operations in sectors as the smallest unit, and the sector size is 4K byte. When a data storage error is detected during the regular storage process, the error flag FLG is set to 1, indicating that a storage error has occurred, and the error address is stored to facilitate subsequent data writing. At this time, the error correction processing branch is entered, and the data in the error sector of the DataFlash storage module is copied to the RAM cache area, and then the data in the error sector is erased, and finally the temporary data in the RAM cache area is rewritten to the previous error sector. At this time, if an error occurs again during the rewriting process, the error flag FLG is set to 2, indicating that an error has occurred in the error correction process. At this time, the second half of the error correction branch is entered, that is, the data in the error sector is erased and the temporary data in the RAM cache area is rewritten as the error sector. After the rewriting is completed without an error, the error flag FLG is reset to 0, and the regular storage process is performed when the error flag FLG is 0.

[0058] When the error flag FLG is 0, it means that there is no error in the storage process of the DataFlash storage module; when the error flag FLG is 1, it means that an error occurs in the storage process of the DataFlash storage module, and the error correction judgment branch is entered at this time; when the error flag FLG is 2, an error occurs when the temporary data in the RAM cache is rewritten into the error sector of the DataFlash storage module during the error correction process, and the correction branch of the error correction judgment branch is entered at this time. It is not necessary to read and copy the correct data of the error sector again, and the data in the RAM cache is not changed. It is only necessary to clear and rewrite the data in the error sector in the DataFlash storage module, which saves steps, speeds up the error correction speed, and does not lose data when writing data. If a write error occurs during the error correction process, the temporary data is copied to the RAM cache according to the processing method of the first error. If the RAM cache data is not cleared, duplicate data will appear, resulting in incorrect storage; or data address judgment is performed in the RAM cache, but this will increase the operation steps and affect the storage efficiency; if the data in the RAM cache is cleared, some data caused by storage errors during the error correction process will be lost. Therefore, the optimal solution for storage efficiency is to add an error flag to mark the current branch operation, and reset the error flag FLG to 0 after each error correction is completed.

[0059] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A data storage method for a smart electric energy meter, characterized in that: The following steps are involved: S1, write the bulk data of the smart energy meter into the DataFlash storage module in units of sectors; S2, always monitor whether there is a storage error, and suspend writing when a storage error occurs; S3, read the correct data of the error sector and write it into the RAM buffer area; S4. Erase all data in the error sector, and then write the RAM buffer data back to the error sector.

2. The data storage method of the smart electric energy meter according to claim 1, characterized in that: The DataFlash storage module performs read, write and erase operations in sectors as the smallest unit, and the sector size is 4K bytes.

3. The data storage method of the smart electric energy meter according to claim 1, characterized in that: When a direct storage error is found in S2, the error flag FLG is set to 1 and the error address is stored.

4. The data storage method of the smart electric energy meter according to claim 1, characterized in that: After the error correction is completed in S4, the error flag FLG is set to 0, the data in the RAM buffer area is cleared, and subsequent data continues to be written into the DataFlash storage module.

5. The data storage method of the smart electric energy meter according to claim 1 or 4, characterized in that: Only when the error flag FLG is 0, direct data storage of the DataFlash storage module is performed. After erasing the error sector data in S4, if a storage error occurs when the RAM cache data is written back to the error sector, the error flag FLG is set to 2.

6. The data storage method of the smart electric energy meter according to claim 1 or 3, characterized in that: When it is found in S2 that the error flag FLG is 2, step S3 is skipped without modifying the data in the RAM buffer area, and step S4 is directly performed to clear and rewrite the data in the error sector.

7. A data storage system for a smart electric energy meter, using the data storage method according to any one of claims 1 to 6, characterized in that: It includes a power module, which supplies power to the main chip and the DataFlash storage module respectively. The main chip and the DataFlash storage module exchange data via a data line.

8. The data storage system of the smart electric energy meter according to claim 7, characterized in that: The power module and the main chip are installed in the smart energy meter. The power module is directly connected to the external mains power, and the external power is transferred to the main chip and the DataFlash storage module through the power module to supply power respectively.

9. The data storage system of the smart electric energy meter according to claim 7, characterized in that: The main chip controls the storage of data in the DataFlash storage module; the main chip also includes a RAM buffer area, which temporarily stores the correct data of the error sector copied from the DataFlash storage module when a write error occurs.

10. The data storage system of the smart electric energy meter according to claim 7, characterized in that: The DataFlash storage module is a separate hardware design and is independent of the smart electricity meter.

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