Flash memory particle grading method and equipment based on erasure time and medium

Abstract

The invention discloses a flash memory particle grading method and device based on erasure time and a medium, firstly, test data of flash memory particles in a plurality of test scenes with different temperatures are obtained, and the temperature of the first test scene is higher than that of the second test scene. Then, according to the test data, a plurality of blocks in the flash memory particles are graded, the blocks are marked as first-class blocks and second-class blocks according to the grading result, and the performance level of the first-class blocks is lower than that of the second-class blocks; and finally, determining the quality of the flash memory particles by counting the number of the first type of blocks and the number of the second type of blocks in the plurality of blocks. Compared with the existing standard of judging based on simple high and low temperature erasing, writing and reading failures, the grading method provided by the embodiment of the invention comprehensively considers the test data under different temperature scenes, and can realize finer and more comprehensive flash memory particle grading.

Description

Technical Field

[0001] The embodiments of the present application relate to but are not limited to the field of flash memory analysis, and in particular to a flash memory particle classification method, device and medium based on erase time. Background Art

[0002] In the field of information storage, flash memory products are widely used in various electronic devices such as smart phones and solid-state drives due to their advantages such as small size and fast read and write speed. Before the products enter the market, screening and grading are key links to ensure the consistency of product quality.

[0003] At present, the commonly used method for screening and grading flash memory particles in the industry is to conduct a round of high and low temperature tests, and complete the screening only based on whether the flash memory particles have erase and read failures in high and low temperature environments. Although this method can exclude obviously defective products, it has great limitations. On the one hand, it ignores the performance differences in the erase and write speed, read speed, and durability of flash memory particles. Even if there is no erase and read failure, the performance of different particles in actual use may be uneven. For example, in solid-state drives, this will cause different users to experience large differences in read and write speeds. On the other hand, with the expansion of flash memory application scenarios, the existing screening and grading methods based only on high and low temperature erase and read failure judgments cannot accurately evaluate the performance of flash memory particles in these complex application scenarios, and it is difficult to ensure the stability and reliability of the product during long-term use. Summary of the invention

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] The embodiments of the present application provide a flash memory particle grading method, device and medium based on erase time, which can achieve more refined and comprehensive flash memory particle grading.

[0006] In a first aspect, an embodiment of the present application provides a flash memory particle grading method based on erase time, the method comprising: obtaining test data of flash memory particles under multiple first test scenarios and second test scenarios, wherein the temperature of the first test scenario is higher than the temperature of the second test scenario; grading multiple blocks in the flash memory particles according to the test data, and marking the multiple blocks as first type blocks and second type blocks according to the grading results, wherein the performance level of the first type blocks is lower than the performance level of the second type blocks; determining the quality of the flash memory particles according to the number of the first type blocks and the second type blocks in the multiple blocks.

[0007] In one embodiment of the present application, the step of obtaining test data of the flash memory particles under multiple first test scenarios and second test scenarios includes: in the first test scenario, repeatedly obtaining a first erase time sequence of the flash memory particles; when the test scenario is the first test scenario, converting the first test scenario to the second test scenario, and repeatedly obtaining a second erase time sequence of the flash memory particles; when the test scenario is the second test scenario, converting the second test scenario to the first test scenario, and obtaining a third erase time sequence of the flash memory particles; when the test scenario is the first test scenario, converting the first test scenario to the second test scenario, and obtaining a fourth erase time sequence of the flash memory particles; when the test scenario is the second test scenario, converting the second test scenario to the first test scenario, and obtaining a fifth erase time sequence of the flash memory particles; when the test scenario is the first test scenario, converting the second test scenario to the second test scenario, and obtaining a sixth erase time sequence of the flash memory particles; and obtaining test data according to the first erase time sequence, the second erase time sequence, the third erase time sequence, the fourth erase time sequence, the fifth erase time sequence, and the sixth erase time sequence.

[0008] In one embodiment of the present application, the multiple blocks in the flash memory particles are graded according to the test data, and the multiple blocks are marked as first-category blocks and second-category blocks according to the grading results, including: calculating according to the first erase time series and the second erase time series to obtain a first time mean; calculating according to the first time mean, the third erase time series, and the fourth erase time series to obtain a second time mean; calculating according to the first time mean, the fifth erase time series, and the sixth erase time series to obtain time evaluation sequences of two test scenarios; grading the multiple blocks in the flash memory particles according to each of the time evaluation sequences and the second time mean, and marking the multiple blocks as first-category blocks and second-category blocks according to the grading results.

[0009] In one embodiment of the present application, the first time mean is calculated according to the first erasure time sequence and the second erasure time sequence, including: obtaining the first erasure time of each of the blocks in all the same erasure rounds according to the first erasure time sequence; calculating according to the first erasure time of each of the blocks in all the same erasure rounds to obtain the first erasure time mean in multiple rounds; obtaining the second erasure time of each of the blocks in all the same erasure rounds according to the second erasure time sequence; calculating according to the second erasure time of each of the blocks in all the same erasure rounds to obtain the second erasure time mean in multiple rounds; averaging the first erasure time means in the multiple rounds and the second erasure time means in the multiple rounds to obtain the first time mean.

[0010] In one embodiment of the present application, the second time mean is calculated based on the first time mean, the third erase time series and the fourth erase time series, including: obtaining the third erase time of each of the blocks based on the third erase time series; obtaining the first time variance by calculating based on the third erase time of each of the blocks and the first time mean; obtaining the fourth erase time of each of the blocks based on the fourth erase time series; obtaining the second time variance by calculating based on the fourth erase time of each of the blocks and the first time mean; and obtaining the second time mean by calculating based on the first time variance and the second time variance.

[0011] In one embodiment of the present application, the multiple blocks in the flash memory particles are graded according to each of the time evaluation sequences and the second time mean, and the multiple blocks are marked as first-category blocks and second-category blocks according to the grading results, including: obtaining the erase time evaluation value corresponding to each of the blocks in the two test scenarios according to each of the time evaluation sequences; comparing the erase time evaluation value corresponding to each of the blocks in the two test scenarios with the second time mean, respectively, and grading the multiple blocks in the flash memory particles according to the comparison results; and marking the multiple blocks as first-category blocks and second-category blocks according to the grading results.

[0012] In one embodiment of the present application, the multiple blocks are marked as first-category blocks and second-category blocks according to the grading results, including: if the absolute value of the difference between the erase time evaluation value of the block and the second time average is greater than a preset threshold, the block is marked as a first-category block; if the absolute value of the difference between the erase time evaluation value of the block and the second time average is less than or equal to the preset threshold, the block is marked as a second-category block.

[0013] In one embodiment of the present application, the quality of the flash memory particles is determined based on the number of the first type of blocks and the second type of blocks in the multiple blocks, including: if the multiple blocks are all the second type of blocks, the flash memory particles are determined to be good products; if the multiple blocks include the first type of blocks and the second type of blocks, and the proportion of the first type of blocks in the multiple blocks is less than a preset threshold, the flash memory particles are determined to be sub-good products; if the multiple blocks include the first type of blocks and the second type of blocks, and the proportion of the first type of blocks in the multiple blocks is greater than the preset threshold, the flash memory particles are determined to be defective products.

[0014] On the other hand, an embodiment of the present application provides an electronic device, comprising a processor, a memory, and a computer program stored in the memory and executable by the processor, wherein when the computer program is executed by the processor, the flash memory particle grading method based on erase time as described above is implemented.

[0015] On the other hand, an embodiment of the present application provides a computer-readable storage medium, which stores a program executable by a processor. When the program executable by the processor is executed by the processor, it is used to perform the flash memory particle classification method based on erase time as described above.

[0016] The embodiment of the present application provides a flash memory particle grading method based on erase time, which first obtains test data of flash memory particles in multiple test scenarios with different temperatures, wherein the temperature of the first test scenario is higher than that of the second test scenario. Then, based on these test data, multiple blocks in the flash memory particles are carefully graded, and these blocks are marked as first-class blocks and second-class blocks according to the grading results, wherein the performance level of the first-class blocks is lower than the performance level of the second-class blocks. Finally, by counting the number of first-class blocks and second-class blocks in multiple blocks, the quality of the flash memory particles can be accurately determined. Compared with the existing standards that only judge the failure of erasing and reading at simple high and low temperatures, the grading method of the embodiment of the present application comprehensively considers the test data under different temperature scenarios, and can achieve more refined and comprehensive flash memory particle grading. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a flow chart of a flash memory particle classification method based on erase time provided in an embodiment of the present application; Figure 2 The embodiment of this application provides Figure 1 Specific flow chart of step 110; Figure 3 This is an embodiment of the present application. Figure 1 Specific flow chart of step 120; Figure 4 This is an embodiment of the present application. Figure 3Specific flow chart of step 310; Figure 5 This is an embodiment of the present application. Figure 3 Specific flow chart of step 320 in FIG. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0019] It should be noted that, although the logical order is shown in the flowchart, in some cases, the steps shown or described can be performed in a different order from that in the flowchart. The terms "first", "second", etc. in the specification, claims and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that can be implemented in this application, so they have no technical substantive significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that can be produced by this application and the purposes that can be achieved, should still fall within the scope of the technical content disclosed in this application. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of narration, and are not used to limit the scope of implementation of this application. The change or adjustment of the relative relationship should also be regarded as the scope of implementation of this application without substantial change of the technical content.

[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0021] In the production process of flash memory products, the screening and grading process before entering the market is crucial. This process not only determines whether the product can meet the performance requirements of different customers, but is also a key step to ensure the quality consistency of flash memory products on the market.

[0022] At present, the commonly used method for screening and grading flash memory particles in the industry is to conduct a round of high and low temperature tests. In this test process, the quality of the flash memory particles is judged only by whether they fail to erase, write or read in high and low temperature environments to complete the screening work. Although this method can eliminate flash memory particles with obvious defects to a certain extent, its grading results are not precise enough and have many limitations.

[0023] On the one hand, the performance of flash memory particles does not only depend on the simple criterion of whether there is a failure in erase, write, or read. In actual use, even if the flash memory particles do not fail in high and low temperature tests, their key performance indicators such as erase speed, read speed, and durability may still vary greatly between different particles. These performance differences will cause the actual performance of different flash memory particles to be uneven in the same usage scenario, affecting the user experience. On the other hand, with the continuous development of flash memory technology and the increasing diversification of application scenarios, the requirements for the performance of flash memory particles are also getting higher and higher. For example, in some high-performance computing scenarios that require extremely high data read and write speed and stability, as well as in the field of industrial control that has strict requirements on flash memory durability and reliability, the existing simple screening and grading methods can no longer meet the needs. The existing screening and grading methods based only on high and low temperature erase and read failure judgments cannot accurately evaluate the performance of flash memory particles in these complex application scenarios, and it is difficult to ensure the stability and reliability of the product during long-term use.

[0024] In view of this, the embodiments of the present application provide a flash memory particle grading method based on erase time, an electronic device, and a computer-readable storage medium. In the method, test data of flash memory particles in multiple test scenarios with different temperatures are first obtained, wherein the temperature of the first test scenario is higher than that of the second test scenario. Then, based on these test data, multiple blocks in the flash memory particles are carefully graded, and these blocks are marked as first-class blocks and second-class blocks according to the grading results, wherein the performance level of the first-class blocks is lower than that of the second-class blocks. Finally, by counting the number of first-class blocks and second-class blocks in multiple blocks, the quality of the flash memory particles can be accurately determined. Compared with the existing standards that only judge the failure of high and low temperature erase and read, the grading method of the embodiment of the present application comprehensively considers the test data under different temperature scenarios, and can achieve more refined and comprehensive flash memory particle grading.

[0025] The embodiments of the present application are further described below in conjunction with the accompanying drawings.

[0026] Reference Figure 1 , Figure 1 1 is a flow chart of a flash memory particle classification method based on erase time provided in an embodiment of the present application. The flow chart may specifically include but is not limited to steps 110 to 130.

[0027] Step 110: Acquire test data of the flash memory particles in a plurality of first test scenarios and a second test scenario, wherein the temperature of the first test scenario is higher than the temperature of the second test scenario; Step 120: grading multiple blocks in the flash memory particles according to the test data, and marking the multiple blocks into first-category blocks and second-category blocks according to the grading results, wherein the performance level of the first-category blocks is lower than the performance level of the second-category blocks; Step 130: Determine the quality of the flash memory particles according to the number of first-category blocks and second-category blocks in the plurality of blocks.

[0028] Steps 110 to 130 are described in detail below.

[0029] In a feasible embodiment, in order to comprehensively evaluate the performance of flash memory particles under different temperature environments, this embodiment sets two test scenarios with different temperatures, namely the first test scenario and the second test scenario, and the temperature of the first test scenario is higher. The flash memory particles are tested under multiple first test scenarios and second test scenarios, and relevant data are recorded. These test data include the erasure time of the flash memory particles. By obtaining multiple sets of test data under different temperature scenarios, the fluctuation of the erasure time of the flash memory particles under different temperature conditions can be more comprehensively understood.

[0030] In a feasible embodiment, after obtaining the test data of each scenario, a certain grading standard can be further formulated according to the test data to grade the multiple blocks in the flash memory particles. For example, the grading can be based on the length of the erase time. The shorter the erase time, the better the performance of the block. According to the grading results, the multiple blocks are divided into the first type of blocks and the second type of blocks, and the performance level of the first type of blocks is stipulated to be lower than that of the second type of blocks. This grading mark is helpful for the subsequent evaluation of the overall performance of the flash memory particles.

[0031] In a feasible embodiment, the ratio of the number of first-type blocks to the number of second-type blocks can reflect the overall performance and quality of the flash memory particles. If the number of second-type blocks in the flash memory particles is large, it means that the performance of the flash memory particles in different temperature scenarios is good, and it can be considered that the quality of the flash memory particles is high; conversely, if the number of first-type blocks is large, it means that the quality of the flash memory particles is relatively low.

[0032] In a feasible embodiment, in order to improve the accuracy of classification, this embodiment implements multiple rounds of full disk erasure and related operations on the flash memory particles during the process of obtaining test data. Figure 2 As shown, the execution process of step 110 may include but is not limited to steps 210 to 270.

[0033] Step 210: In a first test scenario, repeatedly obtain a first erasing time sequence of a flash memory particle; Step 220: when the test scenario is the first test scenario, convert the first test scenario to the second test scenario, and repeatedly obtain a second erasure time sequence of the flash memory particles; Step 230: when the test scenario is the second test scenario, convert the second test scenario to the first test scenario, and obtain a third erasure time sequence of the flash memory particles; Step 240: when the test scenario is the first test scenario, convert the first test scenario to the second test scenario, and obtain a fourth erasing time sequence of the flash memory particles; Step 250: when the test scenario is the second test scenario, convert the second test scenario to the first test scenario, and obtain a fifth erasure time sequence of the flash memory particles; Step 260: When the test scenario is the first test scenario, convert the second test scenario to the second test scenario, and obtain a sixth erasure time sequence of the flash memory particles; Step 270: Obtain test data according to the first erasing time sequence, the second erasing time sequence, the third erasing time sequence, the fourth erasing time sequence, the fifth erasing time sequence and the sixth erasing time sequence.

[0034] It is understandable that in flash memory particles, the smallest unit of erase operation is a block, and a flash memory particle usually contains thousands of blocks. Generally speaking, blocks with slightly weaker performance or mechanical failures will take longer to erase than blocks with better performance. In particular, blocks with mechanical failures are very likely to directly lead to erase failures.

[0035] In a feasible embodiment, the operation of obtaining the first erase time sequence of flash memory particles is as follows: repeatedly obtaining the erase time of each block of the flash memory particles in the first test scenario, the erase time of each block obtained each time can constitute a round of erase records, and the multiple rounds of erase records obtained multiple times are integrated to obtain the first erase time sequence.

[0036] Furthermore, after obtaining the first erase time sequence, the test scenario needs to be converted from the first test scenario to the second test scenario, for example, by lowering the test temperature. The method of obtaining the second erase time sequence of the flash memory particles is similar to the first erase time sequence, which is to repeatedly obtain the erase time of each block in the second test scenario, and combine multiple rounds of erase records to obtain the second erase time sequence.

[0037] Furthermore, after obtaining the second erasure time sequence, the test scenario is converted back to the first test scenario to obtain the third erasure time sequence. Different from obtaining the first erasure time sequence, this time only obtains the erasure time of each block in one round under the first test scenario, and the erasure time of each block in this round is the third erasure time sequence.

[0038] Furthermore, after obtaining the third erasure time sequence, the test scenario is converted to the second test scenario again, and then the fourth erasure time sequence is obtained. The difference from obtaining the second erasure time sequence is that only one round of erasure time of each block in the second test scenario is obtained, and the result of this round is the fourth erasure time sequence.

[0039] Furthermore, after obtaining the fourth erasure time sequence, the test scene is converted back to the first test scene to obtain the fifth erasure time sequence, and the process is similar to that of obtaining the third erasure time sequence.

[0040] In a feasible embodiment, after obtaining the fifth erase time sequence, the test scene can be further converted from the first test scene to the second test scene, and then the sixth erase time sequence of the flash memory particles can be obtained. This process is similar to obtaining the fourth erase time sequence. It should be noted that after obtaining the fourth erase time sequence, there is another operation sequence: the sixth erase time sequence of the flash memory particles can be obtained in the current second test scene, and then the temperature of the test scene can be increased, converted back to the first test scene, and then the fifth erase time sequence of the flash memory particles can be obtained. This means that the order of obtaining the fifth erase time sequence of the flash memory particles and obtaining the sixth erase time sequence can be flexibly adjusted. By using this method of flexibly changing the order, the time spent on scene temperature changes during the test process can be effectively saved.

[0041] In a feasible embodiment, after obtaining the test data of the flash memory particles under the first test scenarios and the second test scenarios, further calculations can be performed based on the test data, and the multiple blocks in the flash memory particles can be graded based on the calculation results. Figure 3 As shown, the execution process of step 120 may include but is not limited to steps 310 to 340.

[0042] Step 310: Calculate according to the first erasure time series and the second erasure time series to obtain a first time average; Step 320: Calculate a second time average value according to the first time average value, the third erasure time series, and the fourth erasure time series; Step 330: Calculate the time evaluation sequences of two test scenarios according to the first time mean, the fifth erasure time sequence and the sixth erasure time sequence; Step 340: Classify multiple blocks in the flash memory particles according to the time evaluation sequence and the second time mean of each test scenario, and mark the multiple blocks into first-category blocks and second-category blocks according to the classification results.

[0043] In a possible embodiment, if Figure 4 As shown, the execution process of step 310 may include but is not limited to steps 410 to 450.

[0044] Step 410: According to the first erasing time sequence, obtain the first erasing time of each block in all the same erasing rounds; Step 420: Calculate the average of the first erasing times of each block in all the same erasing rounds to obtain the average of the first erasing times in multiple rounds; Step 430: Obtain the second erasing time of each block in all the same erasing rounds according to the second erasing time sequence; Step 440: Calculate the second erasing time of each block in all the same erasing rounds to obtain the average value of the second erasing time in multiple rounds; Step 450: averaging the first erasing time means under multiple rounds and the second erasing time means under multiple rounds to obtain a first time mean.

[0045] For example, the first erasure time sequence includes multiple rounds of erasure records of each block in the first test scenario. Assuming that the flash memory particle includes N blocks, and the erasure operation is repeated for K rounds, each round of erasure records can be represented by a corresponding sequence: the first round of erasure records is , the second round of erasure records is , and so on, the erasure record of the Kth round .in, Indicates the erasure time of the i-th block in the first round (i.e., the first erasure time). The corresponding explanations for other rounds are the same and will not be repeated here. After completing K rounds of full disk erasure, each block has K corresponding erasure time data.

[0046] In order to obtain the mean of the first erasure time series, the specific calculation steps are as follows: calculate the average value of each round of erasure records. For example, the average value of the first round of erasure records is , the average value of the second round of erasure records is , and so on, the average value of the K-th round of erasure records is Furthermore, by calculating the average value of each round of erasure records, the mean value of the first erasure time series can be obtained. For the second erasure time series, the same calculation process as the first erasure time series is used. First, the average value of each round of erasure records is calculated, and then the average of these average values ​​is calculated to obtain the mean of the second erasure time series. Finally, the mean of the first erased time series is , and the mean of the second erasure time series Find the average, and the result is the first time mean .

[0047] In a feasible embodiment, after the first time mean is calculated, the second time mean may be calculated based on the first time mean, such as Figure 5 As shown, the execution process of step 320 may include but is not limited to steps 510 to 550.

[0048] Step 510: Obtaining a third erasing time of each block according to the third erasing time sequence; Step 520: Calculate according to the third erasure time of each block and the first time mean to obtain a first time variance; Step 530: Obtaining a fourth erasing time of each block according to the fourth erasing time sequence; Step 540: Calculate according to the fourth erasing time of each block and the first time mean to obtain a second time variance; Step 550: Calculate according to the first time variance and the second time variance to obtain a second time mean.

[0049] In a feasible embodiment, the third erasure time sequence includes a round of erasure records of each block of the flash memory particle under the first test scenario. Assume that the erasure record of this round is ,in ( ) represents the erasure time of the i-th block (i.e., the third erasure time). The erasure time corresponding to each block is averaged with the first time. Calculate the variance to get the first time variance The fourth erasure time series includes a round of erasure records of each block of the flash memory particle in the second test scenario. Assume that the erasure record of this round is ,in ( ) represents the erasure time of the i-th block (i.e., the fourth erasure time). The erasure time corresponding to each block is averaged with the first time. Calculate the variance and get the second time variance Finally, the first time variance and the second time variance By taking the mean, we can get the second time mean. .

[0050] In a feasible embodiment, in step 330, the fifth erasure time sequence includes a round of erasure records of each block of the flash memory particle under the first test scenario. When calculating the time evaluation sequence based on the first time average, the second time average and the fifth erasure time sequence, the specific operation is as follows: for each block in the fifth erasure time sequence, compare its corresponding erasure time with the first time average. Calculate the variance respectively. Assume that the fifth erasure time series is ,in ( ) represents the erasure time of the i-th block. The first time mean is , then the variance corresponding to the i-th block is , the variances corresponding to these blocks are combined to obtain the time evaluation sequence in the first test scenario. For the sixth erasure time series, the same calculation process as the fifth erasure time series is used. For each block in the sixth erasure time series, the corresponding erasure time is compared with the first time mean. The variances are calculated respectively, thereby obtaining the time evaluation sequence in the second test scenario.

[0051] In a feasible embodiment, after calculating the time evaluation sequence of the first test scenario and the time evaluation sequence of the second test scenario, multiple blocks in the flash memory particles can be further classified according to the two time evaluation sequences and the second time mean, and these blocks can be marked as first-class blocks and second-class blocks according to the classification results. The specific operation is as follows: First, the erase time evaluation value of each block is extracted from the time evaluation sequence of the first test scenario, and these values ​​are the variances corresponding to each block. Next, a judgment operation is performed on each block: when the absolute value of the difference between the erase time evaluation value of the current block and the second time mean is greater than a preset threshold, the block is marked as a first-class block; if the condition is not met, that is, the absolute value of the difference is less than or equal to the preset threshold, it is marked as a second-class block. Among them, the first-class block is defined as a block with poor performance (bad block), and the second-class block is defined as a block with good performance (good block). Similarly, the erase time evaluation value of each block is extracted from the time evaluation sequence of the second test scenario. Subsequently, each block is judged in the same way: if the absolute value of the difference between the erase time evaluation value of the current block and the second time mean is greater than the preset threshold, the block is marked as a first-class block (bad block); if the absolute value of the difference is less than or equal to the preset threshold, the block is marked as a second-class block (good block).

[0052] It should be noted that this embodiment does not set any limiting conditions for the specific value of the preset threshold, so that the threshold can be flexibly adjusted according to different flash memory particle characteristics and actual application scenarios, thereby optimizing the classification effect.

[0053] In a feasible embodiment, according to the number of first-class blocks and second-class blocks in multiple blocks in the flash memory particles counted in the previous steps, the quality of the flash memory particles can be determined according to the following rules: If all blocks are second-class blocks, it indicates that the overall performance of the flash memory particles is good, and it is judged as a good product. If there are both first-class blocks and second-class blocks in multiple blocks, and the proportion of first-class blocks in the total number of blocks is less than a preset threshold, it means that although there are some blocks with poor performance in the flash memory particles, the overall performance can still meet certain usage requirements, and it is judged as a sub-good product. If there are both first-class blocks and second-class blocks in multiple blocks, and the proportion of first-class blocks in the total number of blocks is greater than a preset threshold, it means that there are many blocks with poor performance in the flash memory particles, which are difficult to meet normal usage requirements, and it is judged as a defective product.

[0054] The following is a specific example to explain the execution process of this method in detail. This operation requires high and low temperature environments, and the specific operating environment is determined according to the temperature range indicators of the flash memory product. The following is an example of the common commercial temperature of -25℃ to 85℃ and the number of blocks is 1000: High temperature data acquisition stage 1. First round of high temperature erasure records Raise the ambient temperature to 85°C, and after the temperature stabilizes, perform an erase operation on the flash memory. Each time a block is erased, record the erase response time of the block, and find an area in the block to store the value. Repeat this operation until 1,000 blocks are erased and recorded. At this point, each of the 1,000 blocks has recorded its own erase response time. For the convenience of statistics, the rb time of this round of operation is uniformly marked as (A0, A1, A2, ..., A999). At this point, the first round of erase response time recording operation at high temperature is completed.

[0055] 2. Multiple rounds of high temperature erase operations To ensure the reliability of the results and avoid the influence of accidental factors, multiple rounds of testing are required. Since the subsequent erase operation will overwrite the previous data, before the second round of operation, the data obtained in the first round should be transferred to a location that will not be erased. Repeat the operation in step 1, and the erase response time obtained in the second round is marked as (B0, B1, B2, ..., B999). This cycle is repeated 18 times in total.

[0056] 3. Standard naming of high temperature data After completing 18 rounds of full disk erasure in a high temperature environment, each block has 18 erase response time data. These data can be further named in a standardized manner. At this point, the high temperature erase data acquisition experiment is completed.

[0057] Data calculation stage 4. Calculate the average value of each round of data Calculate the erase response time data of 18 cycles obtained in the previous steps. First, take the average of the response time of each cycle, for example: First cycle: K1 , The second cycle: K2 , The third cycle: K3 , ... The 18th cycle: K18 .

[0058] 5. Calculate the average of multiple rounds After obtaining the average values ​​of the 18 cycles respectively, the average value K19=(K1+K2+K3+…+K18) / 18 is taken for these 18 average values, the value of K19 is saved in the flash memory, and then the next step is performed.

[0059] Low temperature data acquisition and calculation stage 6. Low temperature data acquisition The test temperature is lowered to -25°C, and steps 1 and 2 are repeated at -25°C. After 18 cycles of testing are completed, the low-temperature erase response time data of 18 cycles are obtained.

[0060] 7. Low temperature data calculation According to the method of steps 4 and 5, the average erase response time of 18 cycles at low temperature is calculated and recorded as K37.

[0061] 8. Average the high and low temperature values The two mean values ​​K19 and K37 obtained at high and low temperatures are averaged to obtain the final mean value X0.

[0062] Square difference calculation stage 9. High temperature square difference calculation Raise the temperature to 85℃ for testing again, and perform the erase operation on the flash memory again. Perform the square difference operation on the response time obtained from each erase operation and the mean value X0, and finally obtain the square difference at high temperature as φ1. For example, the erase response time of this round is marked as (T0, T1, T2, …, T999), and perform the square difference operation on each response time and the mean value X0 to obtain: φ1 .

[0063] 10. Low temperature square difference calculation Lower the temperature to -25°C and perform the same operation as step 9. Perform a square difference operation on the rb time obtained from each erase operation and the mean value X0, and finally obtain the square difference at low temperature as φ2. For example, the erase response time of this round is marked as (P0, P1, P2, ..., P999), and the square difference operation of each response time and the mean value X0 is obtained: Φ2 .

[0064] 11. Calculation of mean square difference The two squared differences φ1 and φ2 are averaged to obtain φ_avg.

[0065] 12. Low temperature block screening The current ambient temperature is still set at -25°C. To save time for temperature change, continue the operation at this temperature. Perform an erase operation on each block, obtain the erase time, and use the erase time and the average value X0 to calculate the variance σ_i. Compare the variance σ_i with φ_avg. If |σ_i-φ_avg| is greater than a preset threshold M, mark the block as a weak block. In this way, complete the variance calculation and comparison of 1,000 blocks, and screen and mark the weak blocks at low temperatures.

[0066] 13. High temperature weak block screening Raise the temperature to 85°C and repeat step 12. Each time a block is erased, the erase time is obtained, and the variance σ_j between the erase time and the average value X0 is calculated. The variance σ_j is compared with φ_avg. If |σ_j-φ_avg| is greater than the threshold M, the block is marked as a weak block. In this way, the variance calculation and comparison of 1,000 blocks are completed, and the weak blocks at high temperature are screened and marked.

[0067] Grading stage 14. Result writing and classification basis After completing all the above steps, the entire screening operation is completed. All test results, including the original bad block mark, the newly added weak block mark, etc., are written into the flash memory. In the flash memory classification operation process, the classification is performed based on the test results written into the flash memory.

[0068] 15. Grading Examples Good product: Read the test results of the flash memory. If all blocks are marked as normal blocks (good blocks), the flash memory particles can be classified as good products.

[0069] Substandard: If Y0 blocks are marked as bad blocks in the high and low temperature test results, and (Y0 / 1000)100%=F0%, where F0 is greater than 0 and less than the preset threshold P, the flash memory particle can be classified as substandard.

[0070] Defective products: If Y1 (Y1>Y0) blocks are marked as bad blocks in the high and low temperature test results, and (Y1 / 1000)100%=F1%, and F1 is greater than the threshold P, then the flash memory particle can be classified as a defective product.

[0071] In this example, multiple rounds of full disk erasure and related operations were performed on the flash memory particles. This method can effectively avoid the result deviation caused by factors such as chance during the experiment, and significantly improve the stability and reliability of the flash memory particle classification results. In addition, during the operation of this example, no limiting conditions are set for the specific value of the preset threshold value P, so that the threshold value can be flexibly adjusted according to different flash memory particle characteristics and actual application scenarios, thereby optimizing the classification effect.

[0072] An embodiment of the present application also discloses an electronic device, wherein the electronic device includes a processor, a memory, and a computer program stored in the memory and executable by the processor, wherein when the computer program is executed by the processor, the flash memory particle grading method based on erase time as described above is implemented.

[0073] The embodiment of the present application further discloses a computer-readable storage medium, in which a program executable by a processor is stored. When the program executable by the processor is executed by the processor, it is used to perform the flash memory particle classification method based on erase time as described above.

[0074] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A flash memory particle classification method based on erase time, characterized in that: The method comprises: Acquire test data of the flash memory particles under a plurality of first test scenarios and a second test scenario, wherein the temperature of the first test scenario is higher than the temperature of the second test scenario; Classifying a plurality of blocks in the flash memory particles according to the test data, and marking the plurality of blocks into first-category blocks and second-category blocks according to the classification results, wherein the performance level of the first-category blocks is lower than the performance level of the second-category blocks; The quality of the flash memory particles is determined according to the number of the first-type blocks and the second-type blocks in a plurality of blocks.

2. The flash memory particle classification method according to claim 1, characterized in that: The step of obtaining test data of the flash memory particles in a plurality of first test scenarios and a second test scenario includes: In the first test scenario, repeatedly obtaining a first erasing time sequence of the flash memory particle multiple times; In the case where the test scenario is the first test scenario, converting the first test scenario to the second test scenario, and repeatedly acquiring a second erasure time sequence of the flash memory particle; When the test scenario is the second test scenario, converting the second test scenario to the first test scenario, and acquiring a third erasure time sequence of the flash memory particles; When the test scenario is the first test scenario, converting the first test scenario to the second test scenario, and acquiring a fourth erasure time sequence of the flash memory particles; When the test scenario is the second test scenario, convert the second test scenario to the first test scenario, and obtain a fifth erase time sequence of the flash memory particles; When the test scenario is the first test scenario, converting the second test scenario to the second test scenario, and acquiring a sixth erasure time sequence of the flash memory particles; Test data is obtained according to the first erasing time sequence, the second erasing time sequence, the third erasing time sequence, the fourth erasing time sequence, the fifth erasing time sequence, and the sixth erasing time sequence.

3. The flash memory particle classification method according to claim 2, characterized in that: The step of grading the plurality of blocks in the flash memory particles according to the test data, and marking the plurality of blocks as first-category blocks and second-category blocks according to the grading results, comprises: Calculating according to the first erasure time series and the second erasure time series to obtain a first time average; Calculate a second time average value according to the first time average value, the third erasure time series, and the fourth erasure time series; Calculate and obtain time evaluation sequences of two test scenarios according to the first time mean, the fifth erasure time sequence, and the sixth erasure time sequence; According to each of the time evaluation sequences and the second time average, a plurality of blocks in the flash memory particle are classified, and according to the classification result, the plurality of blocks are marked as first-category blocks and second-category blocks.

4. The flash memory particle classification method according to claim 3, characterized in that: The calculating a first time mean value according to the first erasure time series and the second erasure time series includes: According to the first erasing time sequence, obtaining the first erasing time of each of the blocks in all the same erasing rounds; Calculate the first erasure time of each block in all the same erasure rounds to obtain an average value of the first erasure time in multiple rounds; According to the second erasing time sequence, obtaining the second erasing time of each of the blocks in all the same erasing rounds; Calculate the second erasure time of each block in all the same erasure rounds to obtain an average value of the second erasure time in multiple rounds; The first erasure time averages in the multiple rounds and the second erasure time averages in the multiple rounds are averaged to obtain a first time average.

5. The flash memory particle classification method according to claim 3, characterized in that: The calculating a second time mean value according to the first time mean value, the third erasure time sequence and the fourth erasure time sequence comprises: Obtaining a third erasing time of each of the blocks according to the third erasing time sequence; Calculate according to the third erasure time of each of the blocks and the first time mean to obtain a first time variance; According to the fourth erasing time sequence, obtaining a fourth erasing time of each of the blocks; Calculate according to the fourth erasure time of each of the blocks and the first time mean to obtain a second time variance; A second time mean is obtained by performing calculation according to the first time variance and the second time variance.

6. The flash memory particle classification method according to claim 3, characterized in that: The step of grading the plurality of blocks in the flash memory particles according to each of the time evaluation sequences and the second time mean, and marking the plurality of blocks into first-category blocks and second-category blocks according to the grading results, comprises: Obtaining, according to each of the time evaluation sequences, an erase time evaluation value corresponding to each of the blocks in the two test scenarios; Compare the erase time evaluation values ​​corresponding to each of the blocks in the two test scenarios with the second time average respectively, and classify the multiple blocks in the flash memory particles according to the comparison results; The plurality of blocks are marked as first-category blocks and second-category blocks according to the classification result.

7. The flash memory particle classification method according to claim 6, characterized in that: The step of marking the plurality of blocks into first-category blocks and second-category blocks according to the classification result comprises: If the absolute value of the difference between the erase time evaluation value of the block and the second time mean value is greater than a preset threshold, marking the block as a first type of block; If the absolute value of the difference between the erase time evaluation value of the block and the second time average is less than or equal to a preset threshold, the block is marked as a second type of block.

8. The flash memory particle classification method according to claim 1, characterized in that: The determining the quality of the flash memory particles according to the number of the first-type blocks and the second-type blocks in the plurality of blocks includes: If the plurality of blocks are all the second type of blocks, the flash memory particle is determined to be a good product; If the plurality of blocks include the first-type blocks and the second-type blocks, and the proportion of the first-type blocks in the plurality of blocks is less than a preset threshold, the flash memory particle is determined to be a substandard product; If the plurality of blocks include the first type of blocks and the second type of blocks, and the proportion of the first type of blocks in the plurality of blocks is greater than the preset threshold, the flash memory particle is determined to be a defective product.

9. An electronic device, wherein: The electronic device includes a processor, a memory, and a computer program stored in the memory and executable by the processor, wherein when the computer program is executed by the processor, the flash memory particle grading method based on erase time as described in any one of claims 1 to 8 is implemented.

10. A computer-readable storage medium storing a program executable by a processor, characterized in that: The processor-executable program is used to execute the flash memory particle classification method based on erase time as claimed in any one of claims 1 to 8 when executed by the processor.

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