Curve acquisition method, temperature control method, electronic equipment and semiconductor equipment

Abstract

The invention belongs to the technical field of semiconductor technologies, and particularly relates to a temperature correction curve obtaining method, a temperature control method of a wafer bearing device, electronic equipment and semiconductor equipment. The obtaining method comprises the following steps: a temperature control heating step: using temperature measured by a temperature detector arranged in a wafer bearing device as temperature control feedback, and controlling a heater arranged in the wafer bearing device to heat the wafer bearing device to a set temperature; a temperature measurement step: when the temperature is stable, a temperature correction device is used for measuring the current real temperature of the wafer bearing device, and the temperature correction device is arranged on the surface of the wafer bearing device; and repeating the temperature control heating step to heat the wafer bearing device to another set temperature and the temperature measurement step at least once so as to obtain a temperature correction curve of the set temperature and the corresponding real temperature. By adopting the acquisition method, the temperature correction curve can be acquired, so that the problem that the deviation between the set temperature and the real temperature is large after the surface of the wafer bearing device is heated is solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor process technology, and specifically relates to a method for obtaining a temperature correction curve, a temperature control method for a wafer carrier, an electronic device, and a semiconductor device. Background Art

[0002] In the integrated circuit manufacturing process, especially in the etching, physical vapor deposition and chemical vapor deposition processes, a wafer carrier is generally used to support and fix the wafer to prevent the wafer from moving or misaligning during the process.

[0003] Wafer carrying devices such as electrostatic chucks can not only support and fix the wafer but also heat the wafer. The temperature of the carrying surface of the base can be controlled by a temperature controller to achieve the purpose of controlling the temperature of the wafer. A temperature measuring fiber is provided inside the electrostatic chuck, which can measure the temperature of the back of the ceramic layer of the electrostatic chuck. The temperature controller can be controlled according to the temperature feedback from the temperature measuring fiber. However, the measuring point of the temperature measuring fiber is the back of the ceramic layer of the electrostatic chuck, and its temperature is different from the temperature of the carrying surface, and also different from the actual temperature of the wafer. This will cause the actual temperature of the wafer to deviate greatly from the target temperature after the electrostatic chuck heats the wafer. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a method for obtaining a temperature correction curve, a method for controlling the temperature of a wafer carrier device, an electronic device and a semiconductor device, which can obtain a temperature correction curve to solve the problem that after the surface of the current wafer carrier device is heated, the set temperature deviates greatly from the actual temperature.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] In a first aspect, an embodiment of the present application provides a method for obtaining a temperature calibration curve, comprising:

[0007] The temperature control and heating step uses the temperature measured by the temperature detector provided in the wafer carrier as the temperature control feedback to control the heater provided in the wafer carrier to heat the wafer carrier to the set temperature, wherein the heater is used to heat the surface of the wafer carrier, and the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier;

[0008] In a temperature measurement step, when the temperature is stable, a temperature calibration device is used to measure the current real temperature of the wafer carrier, and the temperature calibration device is arranged on the surface of the wafer carrier;

[0009] Repeat the temperature control heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once to obtain a temperature calibration curve between the set temperature and the corresponding actual temperature.

[0010] In a second aspect, an embodiment of the present application provides a temperature control method for a wafer carrier, comprising:

[0011] Get the set heating temperature;

[0012] Taking the set heating temperature as the actual temperature, obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve; wherein the temperature correction curve is obtained by the above-mentioned acquisition method;

[0013] The temperature measured by the thermometer is used as temperature control feedback to control the heater to correct the heating temperature to heat the wafer carrier; wherein the thermometer and the heater are arranged in the wafer carrier, the heater is used to heat the surface of the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier.

[0014] In the third aspect, an embodiment of the present application provides an electronic device, which is electrically connected to a heater and a thermometer arranged in a wafer carrier, the heater is used to heat the surface of the wafer carrier, the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier, and a temperature calibration device is arranged on the surface of the wafer carrier, the electronic device includes at least one memory and at least one processor, a computer program is stored in the memory, and the processor is used to execute the acquisition method described in any of the above embodiments according to the computer program.

[0015] In a fourth aspect, an embodiment of the present application provides a semiconductor device, including:

[0016] A wafer carrier, wherein a heater and a temperature detector are arranged in the wafer carrier, the heater is used to heat the surface of the wafer carrier, and the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier; and

[0017] At least one memory and at least one processor, the memory stores a computer program; the processor executes the computer program to implement the above-mentioned temperature control method.

[0018] In the embodiment of the present application, a heater and a thermometer are provided in the wafer carrier device. The heater can heat the surface of the wafer carrier device, and the thermometer can measure the temperature of the surface of the wafer carrier device. After setting the set temperature, the heater can use the temperature measured by the thermometer as temperature control feedback to heat the wafer carrier device to the set temperature, and then the real temperature of the surface of the wafer carrier device can be obtained by a temperature calibration device placed on the surface of the wafer carrier device; the heater is repeatedly controlled to heat the wafer carrier device to another set temperature, and the temperature calibration device can obtain another real temperature of the surface of the wafer carrier device. It can be seen that after the above steps, the real temperature corresponding to each set temperature can be obtained, and each set temperature and real temperature can correspond to a coordinate point in the coordinate system. The temperature calibration curve of the set temperature and the corresponding real temperature can be obtained by fitting each coordinate point.

[0019] After obtaining the temperature calibration curve, after obtaining the set heating temperature of the wafer to be controlled, the calibrated heating temperature corresponding to the set heating temperature can be determined according to the temperature calibration curve. After the heater is heated at the calibrated heating temperature corresponding to the set heating temperature, the actual temperature of the surface of the wafer carrier is the set heating temperature. It can be seen that heating the surface of the wafer carrier according to the temperature calibration curve of the present application can reduce the deviation between the actual temperature of the surface of the wafer carrier and the set heating temperature, and even make the actual temperature equal to the set heating temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figures 1 to 3 A schematic flow chart of a method for obtaining a temperature calibration curve disclosed in different embodiments of the present application;

[0021] Figure 4 A schematic diagram of the structure of each heating area on the wafer carrier device disclosed in the embodiment of the present application;

[0022] Figure 5 A schematic flow chart of a temperature control method for a wafer carrier device disclosed in an embodiment of the present application;

[0023] Figure 6 A graph of a temperature calibration curve obtained in an embodiment of the present application;

[0024] Figure 7 This is a temperature variation curve diagram of the surface of the wafer carrier device disclosed in the embodiment of the present application.

[0025] Description of reference numerals:

[0026] 100 - Heating area. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or at least two. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0029] In combination with the accompanying drawings, the temperature correction curve acquisition method, wafer carrier temperature control method, electronic device and semiconductor device provided in the embodiments of the present application are described in detail through specific embodiments and their application scenarios.

[0030] like Figures 1 to 4 As shown, the embodiment of the present application discloses a method for obtaining a temperature correction curve, comprising:

[0031] S120, temperature control and heating step, using the temperature measured by the temperature detector provided in the wafer carrier as temperature control feedback, controlling the heater provided in the wafer carrier to heat the wafer carrier to a set temperature, wherein the heater is used to heat the surface of the wafer carrier, and the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier.

[0032] Specifically, after setting the set temperature, the heater can use the temperature measured by the thermometer as temperature control feedback to heat the surface of the wafer carrier to the set temperature; the thermometer can be a temperature measuring optical fiber, and the thermometer can measure the temperature of the back side of the ceramic layer of the wafer carrier, which can be equivalent to the temperature of the surface of the wafer carrier under ideal conditions, thereby achieving the purpose of using the thermometer to measure the temperature of the surface of the wafer carrier. However, in actual processes, there is often an error between the temperature measured by the thermometer and the actual temperature of the surface of the wafer carrier. For details, please refer to Figure 6 .

[0033] S130, temperature measurement step, when the temperature is stable, use the temperature calibration device to measure the current real temperature of the wafer carrier, the temperature calibration device is set on the surface of the wafer carrier. Specifically, when the temperature fluctuation meets the requirements, it can be determined that the temperature is stable. At this time, the instantaneous temperature of a single point on the surface of the wafer carrier does not change much, thereby improving the accuracy of the current real temperature of the surface of the wafer carrier measured by the temperature calibration device. The temperature fluctuation of the surface of the wafer carrier can be referred to Figure 7 The curve in the figure is the instantaneous temperature of the surface of the wafer carrier, and the straight line is the average temperature of the surface of the wafer carrier.

[0034] S141, repeat the temperature control heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once. Specifically, the set temperature can be set repeatedly at least once, and the set temperature set each time is different, and after each set temperature is set, the heater can heat the surface of the wafer carrier to a different set temperature, and the actual temperature of the surface of the wafer carrier corresponding to the different set temperatures can be obtained through the temperature calibration device. For example, the upper computer sends the first set temperature instruction to the lower computer, and the lower computer controls the heater to heat the wafer carrier to the first set temperature according to the feedback of the temperature measuring optical fiber, and then the upper computer sends the next set temperature instruction, and the lower computer controls the heater to heat the wafer carrier to the next set temperature again according to the feedback of the temperature measuring optical fiber, and so on, until the heater heats the wafer carrier to the last set temperature.

[0035] S142, obtaining a temperature calibration curve between the set temperature and the corresponding actual temperature.

[0036] In the coordinate system where the temperature correction curve is located, the set temperature and the actual temperature correspond to different coordinate axes. The set temperature represents the target temperature of the surface of the wafer carrier required by the process. In the process of obtaining the temperature correction curve, the correction heating temperature is the same as the set temperature. The actual temperature represents the actual temperature of the surface of the wafer carrier when the heater heats the wafer carrier to the set temperature measured by the thermometer.

[0037] In the embodiment of the present application, a heater and a thermometer are provided in the wafer carrier device. The heater can heat the surface of the wafer carrier device, and the thermometer can measure the temperature of the surface of the wafer carrier device. After setting the set temperature, the heater can use the temperature measured by the thermometer as temperature control feedback to heat the wafer carrier device to the set temperature, and then the real temperature of the surface of the wafer carrier device can be obtained by a temperature calibration device placed on the surface of the wafer carrier device; the heater is repeatedly controlled to heat the wafer carrier device to another set temperature, and the temperature calibration device can obtain another real temperature of the surface of the wafer carrier device. It can be seen that after the above steps, the real temperature corresponding to each set temperature can be obtained, and each set temperature and real temperature can correspond to a coordinate point in the coordinate system. The temperature calibration curve of the set temperature and the corresponding real temperature can be obtained by fitting each coordinate point.

[0038] After obtaining the temperature correction curve, after obtaining the set heating temperature of the wafer to be controlled, the corrected heating temperature corresponding to the set heating temperature can be determined according to the temperature correction curve. After the heater is heated with the corrected heating temperature corresponding to the set heating temperature, the actual temperature of the surface of the wafer carrier is the set heating temperature. Specifically, in the process of heating the wafer, the set temperature of the wafer is the same as the real temperature in the temperature correction curve. According to the real temperature, the set heating temperature of the corresponding wafer carrier can be obtained, and the set heating temperature is the corrected heating temperature. It can be seen that heating the surface of the wafer carrier using the temperature correction curve obtained by the acquisition method of the present application can reduce the deviation between the real temperature and the set temperature of the surface of the wafer carrier, and even make the real temperature equal to the set temperature.

[0039] In an optional embodiment, the shape of the temperature calibration device is adapted to the shape of the wafer carrying surface of the wafer carrying device, and is used to measure the temperature of multiple heating areas 100 on the wafer carrying device. Figure 4 The heating area 100 may be a circular area and a plurality of annular areas surrounding the circular area. In this embodiment, the shape of the temperature calibration device matches the shape of the wafer carrying surface of the wafer carrying device, so the temperature calibration device can measure the temperature of all areas on the wafer carrying surface.

[0040] Optionally, the acquisition method further includes:

[0041] S330, determining whether the heater heats the wafer carrier to the last set temperature, if so, executing step 142; if not, returning to step S120, and then controlling the heater to heat the wafer carrier to another set temperature.

[0042] Specifically, the number of set temperatures is selected according to actual conditions. The more set temperatures there are, the more accurate the temperature correction curve is. For example, the number of set temperatures can be ten, namely S1, S2...S10. When the heater does not heat the wafer carrier to S10, the process continues to return to step S120; after the heater heats the wafer carrier to S10, the cycle ends to execute step 142.

[0043] In an optional embodiment, the temperature calibration device is a wired RTD temperature measuring wafer, which can improve the accuracy of the temperature calibration device in measuring the actual temperature of the surface of the wafer carrier. Of course, the temperature calibration device can also be a temperature sensor or other component that can directly measure the actual temperature of the surface of the wafer carrier.

[0044] As the size of the wafer continues to increase, the size of the corresponding wafer carrier surface also continues to increase. For example, the diameter is 12 inches. The surface of the wafer carrier has at least two heating areas 100, and different heating areas 100 correspond to different heaters to achieve heating of a large area. Optionally, each heating area 100 can be an annular area and a circular area, and each heating area 100 is nested in sequence. After each heater heats the surface of the wafer carrier, the temperature of each heating area 100 on the surface of the wafer carrier may be different. Therefore, using a temperature correction curve may not be able to control each heating area 100 on the surface of the wafer carrier at a set temperature.

[0045] In an optional embodiment, each heating area 100 corresponds to a temperature correction curve.

[0046] Optionally, the number of heaters can be multiple groups, each group of heaters includes at least one heater, and each heating area 100 corresponds to each group of heaters one by one, that is, each group of heaters can heat each heating area 100 respectively. Therefore, when each heating area 100 corresponds to a temperature correction curve, the verification correction temperature corresponding to the set temperature of each heating area 100 can be obtained according to each temperature correction curve, and each group of heaters can heat each heating area 100 at each verification correction temperature, thereby ensuring that the temperatures of each temperature control area on the surface of the wafer carrier device tend to be consistent.

[0047] In step S130, the steps of measuring the current real temperature using the temperature calibration device are as follows:

[0048] The current real temperature of each heating area 100 is measured respectively by using a temperature calibration device.

[0049] Optionally, the number of temperature calibration devices may be multiple groups, each group of temperature calibration devices includes at least one temperature calibration device, and each group of temperature calibration devices can measure the current real temperature of each heating area 100 one by one. For the temperature measuring wafer, it has multiple temperature measuring resistors or temperature measuring couples, which can measure the real temperature of each area of ​​the wafer carrier. At this time, in step S142, the temperature calibration curve of the set temperature and the corresponding real temperature is obtained: the temperature calibration curve of the set temperature and the corresponding real temperature of each heating area 100 is obtained respectively.

[0050] In order to verify the accuracy of controlling the temperature of the surface of the wafer carrier by the temperature correction curve, in an optional embodiment, the method further includes:

[0051] S150, obtaining a verification set temperature, and taking the verification set temperature as the actual temperature, obtaining a verification correction temperature corresponding to the verification set temperature according to a temperature correction curve.

[0052] The verification set temperature here refers to the target temperature on the surface of the wafer carrier, that is, the actual temperature in the temperature correction curve. The corresponding set temperature is the verification correction temperature of the heater. In other words, when the heater heats the wafer carrier to the set temperature at the verification correction temperature, the actual temperature on the surface of the wafer carrier is the verification set temperature. It should be noted that the verification set temperature here can be the same as the value of the set temperature in the process of obtaining the temperature correction curve; of course, the verification set temperature may also be different from the value of the set temperature. Figure 6 For example, the verification set temperature is the Y-axis temperature value of the temperature correction curve. According to the temperature correction curve, the X-axis temperature value can be obtained, that is, the verification correction temperature corresponding to the verification set temperature. For example, the verification set temperature Ty = 45 ° C, and the corresponding verification correction temperature Tx = 40 ° C. If the temperature correction curve is accurate, when the upper computer sends a temperature instruction of 40 ° C, the lower computer feedbacks the temperature of the surface of the wafer carrier device through the temperature measurement optical fiber. In this embodiment, the temperature correction device is used to measure the difference between the actual temperature of the surface of the wafer carrier device and 45 ° C to determine whether the point of the temperature correction curve is accurate.

[0053] S160, using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the surface of the wafer carrier to verify the calibration temperature.

[0054] S170. When the temperature is stable, use a temperature calibration device to measure the current actual verification temperature.

[0055] S180: Determine whether the difference between the current actual verification temperature and the verification setting temperature is less than a first preset threshold.

[0056] S190: When the difference between the current actual verification temperature and the verification setting temperature is less than a first preset threshold, determine that the verification setting temperature meets the specification.

[0057] In this embodiment, after obtaining the verification set temperature, the corresponding verification correction temperature is obtained according to the temperature correction curve, and then the heater heats the surface of the wafer carrier device at the verification correction temperature. If the temperature of the surface of the wafer carrier device can be accurately controlled by the above-mentioned temperature correction curve, then the actual verification temperature of the surface of the wafer carrier device should not be much different from the verification set temperature. Therefore, it is possible to determine whether the verification set temperature meets the specifications by judging whether the difference between the current actual verification temperature and the verification set temperature is less than the first preset threshold value, and then determine whether the temperature of the surface of the wafer carrier device can be accurately controlled by the temperature correction curve.

[0058] In another optional embodiment, the surface of the wafer carrier has at least two heating areas 100, each heating area 100 is provided with at least two temperature measurement points, and the acquisition method further includes:

[0059] S150, obtaining a verification set temperature, and taking the verification set temperature as the actual temperature, obtaining a verification correction temperature corresponding to the verification set temperature according to a temperature correction curve.

[0060] S160, using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the surface of the wafer carrier to verify the calibration temperature.

[0061] S170. When the temperature is stable, use a temperature calibration device to measure the current actual verification temperature.

[0062] S181, obtaining the actual average value of the current real verification temperature of each temperature measuring point in each heating area 100 and the regional range of the current real verification temperature of each temperature measuring point in each heating area, wherein the regional range is the difference between the highest temperature value and the lowest temperature value in the heating area.

[0063] At least two temperature measuring points are provided in each heating area 100, so the temperature calibration device can measure the real verification temperature of each temperature measuring point in each heating area 100 respectively, and then can obtain the actual average value of the current real verification temperature of each temperature measuring point in each heating area 100 and the regional range of the current real verification temperature of each temperature measuring point in each heating area. For example, the surface of the wafer carrier device has two heating areas 100, and each heating area 100 is provided with three temperature measuring points. The actual average value obtained in this step is: the actual average value of the real verification temperature of the three temperature measuring points in the first heating area 100 and the actual average value of the real verification temperature of the three temperature measuring points in the second heating area 100; the regional range obtained in this step is: the regional range of the real verification temperature of the three temperature measuring points in the first heating area 100, that is, the difference between the highest temperature point and the lowest temperature point of the three temperature measuring points; and the regional range of the real verification temperature of the three temperature measuring points in the second heating area 100, that is, the difference between the highest temperature point and the lowest temperature point of the three temperature measuring points.

[0064] S182, determine whether the difference between each actual average value and the verification set temperature is within the first preset range, and whether the range of each area is within the second preset range. Optionally, the first preset range can be ±0.5℃, ±1℃, ±2℃, etc., and the second preset range can also be selected according to actual conditions, such as the second preset range can be 0℃~1℃, 0℃~2℃, etc. This application does not limit the specific values ​​of the first preset range and the second preset range.

[0065] This embodiment determines whether the temperature correction curve is accurate by determining whether the difference between the actual average value of each heating area 100 and the verification setting temperature is within the corresponding first preset range, and whether the regional range of each heating area 100 is within the corresponding second preset range. By making the difference between the actual average value of each heating area 100 and the verification setting temperature within the first preset range, the actual verification temperature of each temperature measuring point in each heating area 100 can be concentrated in the first preset range; and by making the regional range of each heating area 100 within the second preset range, the actual verification temperature of each temperature measuring point in each heating area 100 can be not much different, and then the actual verification temperature of each temperature measuring point is close to the first preset range, or even within the first preset range. Therefore, by determining whether the difference between the actual average value of each area and the verification setting temperature is within the first preset range, and whether the regional range of each area is within the second preset range, it can be accurately determined whether the temperature correction curve can accurately control the temperature of the surface of the wafer carrier.

[0066] S183. When the difference between each actual average value and the verification set temperature is within the first preset range, and the range of each region is within the second preset range, it is determined that the verification set temperature meets the specification.

[0067] In order to correct the temperature correction curve, in an optional embodiment, when there is a heating area where the difference between the actual average value and the verification set temperature is outside the first preset range, the acquisition method further includes:

[0068] S200, correct the actual average value of the heating area with a preset difference, take the corrected actual average value as the real temperature, and calibrate the temperature correction curve. Optionally, the preset difference may be half of the difference between the actual average value and the verified set temperature, thereby preventing the temperature of the heating area 100 from changing too much. For example, if the actual average value is 42°C and the verified set temperature is 40°C, then the preset difference is (42-40) / 2, i.e., 1°C. Of course, the preset difference may also be selected according to actual conditions, such as the preset difference may be a fixed value of 0.5°C, 1°C, etc., and the present application does not limit the specific value of the preset difference.

[0069] When the difference between the actual average value and the verification set temperature is greater than or equal to the first preset threshold, the actual average value whose difference with the verification set temperature is greater than or equal to the first preset threshold is corrected by the preset difference, so that the actual average value can be adjusted toward the verification set temperature, thereby calibrating the temperature correction curve.

[0070] S210, obtaining a calibrated verification correction temperature corresponding to the verification setting temperature according to a calibrated temperature correction curve.

[0071] S220, using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the surface of the wafer carrier at the calibrated verification correction temperature.

[0072] S230. When the temperature is stable, use the temperature calibration device to measure the actual average value after calibration.

[0073] S241, determine whether the difference between the actual average value after calibration and the verification set temperature is within the third preset range, if not, return to step S200. Optionally, the third preset range can be selected according to actual conditions, such as the error value can be ±0.5°C, ±1°C, ±2°C, etc.

[0074] In this embodiment, after calibrating the temperature correction curve, the calibrated verification correction temperature corresponding to the verification setting temperature is obtained through the calibrated temperature correction curve, and then the heater heats the surface of the wafer carrier again with the calibrated verification correction temperature, and finally determines again whether the difference between the calibrated actual average value and the verification setting temperature is within the third preset range. It can be seen that in this embodiment, by determining whether the calibrated actual average value is accurate, it can be determined whether the calibrated temperature correction curve can accurately control the temperature of the surface of the wafer carrier. In addition, in this embodiment, the difference between the calibrated actual average value and the verification setting temperature is within the third preset range, so that the calibrated actual average value of each temperature measuring point in each heating area 100 can be concentrated to the third preset range; if the calibrated actual average value of each temperature measuring point in each heating area 100 is not within the third preset range, the actual average value is corrected again with the preset difference, and then the temperature correction curve is calibrated again.

[0075] It should be noted that the verification setting temperature here is the same as the verification setting temperature in step S150, while the verification correction temperature after calibration is different from the verification correction temperature in step S150.

[0076] In an optional embodiment, when the difference between the actual average value after calibration and the verification set temperature is within a third preset range, the acquisition method further includes:

[0077] S242. Determine whether the ratio of the maximum regional range of the current actual verification temperature of each temperature measuring point in each heating area 100 after calibration to the overall range of the wafer carrier is greater than or equal to a second preset threshold, and the overall range is the difference between the highest temperature value and the lowest temperature value in the wafer carrier.

[0078] S243: If yes, the calibration ends.

[0079] Optionally, the second preset threshold value may be ninety-five percent. The regional range of each heating area 100 refers to: the temperature difference between the lowest temperature point and the highest temperature point in each heating area 100, and the overall range refers to the temperature difference between the lowest temperature point and the highest temperature point in all heating areas 100. If the surface of the wafer carrier has a total of 4 heating areas 100, and each heating area 100 has 10 temperature measuring points, then the surface of the wafer carrier has a total of 40 temperature measuring points. The difference between the highest temperature point and the lowest temperature point in these 40 temperature measuring points is the overall range, and the difference between the highest temperature point and the lowest temperature point in the 10 temperature measuring points of each heating area 100 is the regional range of the area. The regional range can reflect the uniformity of temperature distribution.

[0080] In this embodiment, the ratio of the maximum regional range of the regional range of the current real verification temperature of each temperature measuring point of each heating area 100 after calibration to the overall range of the wafer carrier is greater than or equal to the second preset threshold value, so that the hardware conditions can be optimized. At this time, the temperature range of each heating area 100 is an inclusive relationship without intersection, so that the hardware is close to the achievable performance limit. For example, the temperature ranges of the four heating areas 100 are 40℃~45℃, 41℃~43℃, 42℃~44℃ and 40℃~43℃, respectively, and 41℃~43℃, 42℃~44℃ and 40℃~43℃ are all included in 40℃~45℃. If the temperature ranges of the four heating areas 100 are 40℃~45℃, 41℃~43℃, 39℃~44℃ and 40℃~43℃, respectively, 40℃~45℃ and 39℃~44℃ are intersected, and the hardware conditions cannot reach the optimal state.

[0081] In an optional embodiment, when the ratio of the maximum regional range to the overall range of the wafer carrier is less than a second preset threshold, the acquisition method further includes:

[0082] S244, obtaining the maximum temperature value and the minimum temperature value of each heating area.

[0083] S245. Obtain, in each heating area, a heating area whose maximum temperature is higher than the maximum temperature of the heating area where the maximum regional range is located, and whose first absolute value of the difference between the two is the largest, and a heating area whose minimum temperature is lower than the minimum temperature of the heating area where the maximum regional range is located, and whose second absolute value of the difference between the two is the largest.

[0084] For example, if there are four heating zones on the surface of the wafer carrier, the maximum temperature of the first heating zone is 45°C and the minimum temperature is 40°C; the maximum temperature of the second heating zone is 46°C and the minimum temperature is 43°C; the maximum temperature of the third heating zone is 44°C and the minimum temperature is 41°C; the maximum temperature of the fourth heating zone is 42°C and the minimum temperature is 38°C. The ranges of each zone are 5°C, 3°C, 3°C, and 4°C, respectively. Therefore, the heating zone with the maximum zone range is the first heating zone, the heating zone with the maximum temperature higher than the maximum temperature of the heating zone with the maximum zone range, and the heating zone with the largest first absolute value of the difference between the two is the second heating zone, the heating zone with the minimum temperature lower than the minimum temperature of the heating zone with the maximum zone range, and the heating zone with the largest second absolute value of the difference between the two is the fourth heating zone.

[0085] In the example given above, the first absolute value is |46-45|°C=1°C, and the second absolute value is |38-40|°C=2°C.

[0086] S246, correct the current actual verification temperature of the heating area where the larger of the first absolute value and the second absolute value is located by the preset value to reduce the larger of the first absolute value and the second absolute value, and return to step S241. Optionally, the preset value can be 0.1°C, 0.2°C, etc., and the present application does not limit the specific value of the preset value.

[0087] In the example given above, the heating area where the larger of the first absolute value and the second absolute value is located is the fourth heating area. At this time, step S247 is specifically: correcting the current true temperature of the fourth heating area with a preset value to reduce the absolute value of the difference between the lowest temperature value of the fourth heating area and the lowest temperature value of the first heating area.

[0088] To give an example from another angle, if the current actual verification temperature range of the heating area 100 where the maximum regional range is located is 40℃~45℃, and the current actual verification temperature ranges of the other three heating areas 100 are 43℃~46℃, 41℃~44℃, and 38℃~42℃ respectively, then the actual verification temperature that exceeds the current actual verification temperature range of the heating area 100 where the maximum regional range is located the most is 38℃. The actual verification temperature that exceeds the most is corrected in the direction close to 40℃~45℃ with the preset value, that is, a positive preset value is added to 38℃ to make it close to 40℃. If the current actual verification temperature ranges of the other three heating areas 100 are 43℃~47℃, 41℃~44℃, and 39℃~42℃ respectively, the actual verification temperature that exceeds the current actual verification temperature range of the heating area 100 where the maximum regional extreme is located the most is 47℃, and the actual verification temperature that exceeds the most is corrected in the direction close to 40℃~45℃ with the preset value, that is: add a negative preset value on the basis of 47℃ to make it close to 45℃.

[0089] In an optional embodiment, the acquisition method further includes:

[0090] S250, determine whether the change of the real temperature of a single point on the surface of the wafer carrier device within the preset time is less than 0.2, and whether the difference between the average value of the real temperature within the preset time, the average value of the real temperature within the first half of the preset time, and the average value of the real temperature within the second half of the preset time are all less than 0.1°C, if so, determine that the temperature is stable. Optionally, the preset time can be selected according to actual conditions, such as the preset time can be 5 seconds, 10 seconds, 15 seconds, etc.

[0091] In this embodiment, the actual temperature of a single point changes by less than 0.2°C within a preset time period, so that the temperature fluctuation range of the surface of the wafer carrier device when the temperature is stable is ±0.1°C, so that its temperature change is in a relatively stable state; and the difference between the average value of the actual temperature within the preset time period, the average value of the actual temperature within the first half of the preset time period, and the average value of the actual temperature within the second half of the preset time period are all less than 0.1°C, which can prevent the single point temperature on the surface of the wafer carrier device from continuing to change slightly in the same direction.

[0092] In addition to this embodiment, the condition for determining whether the temperature is stable may also be: the 3-sigma of the actual temperature of a single point on the surface of the wafer carrier is less than 0.1° C. within a preset time period.

[0093] like Figure 5 As shown, the embodiment of the present application also discloses a temperature control method of a wafer carrier, comprising:

[0094] S310, obtaining a set heating temperature.

[0095] S320, taking the set heating temperature as the actual temperature, and obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve; wherein the temperature correction curve is obtained by using the acquisition method described in any of the above embodiments. It should be noted that the corrected heating temperature here refers to the set temperature corresponding to the actual temperature in the temperature correction curve.

[0096] S330, using the temperature measured by the thermometer as temperature control feedback, controlling the heater to correct the heating temperature to heat the wafer carrier; wherein, the thermometer and the heater are arranged in the wafer carrier, the heater is used to heat the surface of the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier.

[0097] This embodiment uses the temperature correction curve obtained by the acquisition method described in any of the above embodiments to control the temperature of the wafer carrier device, and heating the surface of the wafer carrier device according to the temperature correction curve can reduce the deviation between the actual temperature of the surface of the wafer carrier device and the set heating temperature, and even make the actual temperature equal to the set heating temperature.

[0098] Optionally, before step S320, the method further includes:

[0099] S350, determining whether the back helium pressure of the wafer carrier is set to 8 torr and whether the back helium volume flow rate is less than 2 sccm, if so, executing step S320; if not, issuing an alarm.

[0100] Setting the back helium pressure of the wafer carrier to 8 torr can simulate the environmental conditions of the wafer carrier in normal working conditions. At this time, radio frequency cannot be applied to avoid damage to external operators and connected equipment caused by radio frequency. The volume flow rate of back helium is less than 2 sccm to ensure that the back of the temperature calibration device is clean and can be stably placed on the surface of the wafer carrier.

[0101] In this embodiment, when obtaining the set heating temperature of the wafer to be controlled, the corrected heating temperature corresponding to the set heating temperature can be determined according to the temperature correction curve. After the heater is heated at the corrected heating temperature, the actual temperature of the surface of the wafer carrier is the set heating temperature. It can be seen that heating the surface of the wafer carrier according to the temperature correction curve of the present application can reduce the deviation between the actual temperature of the surface of the wafer carrier and the set heating temperature, and even make the actual temperature equal to the set heating temperature.

[0102] In an optional embodiment, the surface of the wafer carrier has at least two heating areas 100.

[0103] Step S320 is specifically as follows:

[0104] S321 , taking the set heating temperature as the actual temperature, and obtaining the corrected heating temperature corresponding to the set heating temperature of each heating area 100 according to the temperature correction curve corresponding to each heating area 100 .

[0105] Step S330 is specifically as follows:

[0106] The temperature measured by the temperature detector is used as a temperature control feedback to control the heater to heat each heating area 100 at each calibrated heating temperature.

[0107] In this embodiment, the heater can heat each heating area 100 respectively. Therefore, when each heating area 100 corresponds to a temperature correction curve, the corrected heating temperature corresponding to the set heating temperature of each heating area 100 is obtained according to each temperature correction curve. The heater can heat each heating area 100 at each corrected heating temperature, thereby ensuring that the temperatures of each heating area 100 on the surface of the wafer carrier device tend to be consistent.

[0108] An embodiment of the present application also discloses an electronic device, which is electrically connected to a heater and a thermometer arranged in a wafer carrier. The heater is used to heat the surface of the wafer carrier. The thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier. A temperature calibration device is provided on the surface of the wafer carrier. The electronic device includes at least one memory and at least one processor. A computer program is stored in the memory. The processor is used to execute the acquisition method described in any of the above embodiments according to the computer program.

[0109] The electronic devices in the embodiments of the present application include mobile electronic devices and non-mobile electronic devices. The electronic device includes, but is not limited to, components such as a radio frequency unit, a network module, an audio output unit, a setting unit, a sensor, a display unit, a user setting unit, an interface unit, a memory, and a processor. Those skilled in the art will appreciate that the electronic device may also include a power source (such as a battery) for powering each component, and the power source may be logically connected to the processor through a power management system, thereby implementing functions such as managing charging, discharging, and power consumption management through the power management system. In one embodiment, the electronic device may be a host computer, i.e., a computer.

[0110] The present application also discloses a semiconductor device, including:

[0111] A wafer carrier device is provided with a heater and a temperature detector, wherein the heater is used to heat the surface of the wafer carrier device, and the temperature detector is used to measure the temperature of the surface of the wafer carrier device and is located below the wafer carrier surface of the wafer carrier device. Optionally, the temperature detector is a temperature measuring optical fiber, and the temperature measuring point of the temperature measuring optical fiber is located below the wafer carrier surface of the wafer carrier device.

[0112] and at least one memory and at least one processor, wherein the memory stores a computer program; the processor executes the computer program to implement the temperature control method described in any of the above embodiments.

[0113] In an optional embodiment, the wafer carrier includes at least two heating areas, and the at least two heating areas include a circular area located in the middle of the wafer carrier and at least one annular area arranged around the circular area.

[0114] The above embodiments of the present application focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here. The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the enlightenment of the present application, ordinary technicians in this field can also make many forms without departing from the scope of protection of the purpose of the present application and the claims, all of which are within the protection of the present application.

Claims

1. A method for obtaining a temperature calibration curve, characterized in that: include: A temperature control and heating step, using the temperature measured by a temperature detector provided in the wafer carrier as temperature control feedback, to control a heater provided in the wafer carrier to heat the wafer carrier to a set temperature, wherein the heater is used to heat the surface of the wafer carrier, and the temperature detector is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrier surface of the wafer carrier; A temperature measurement step, when the temperature is stable, using a temperature calibration device to measure the current real temperature of the wafer carrier, wherein the temperature calibration device is arranged on the surface of the wafer carrier; Repeat the temperature control and heating step to heat the wafer carrier to another set temperature and the temperature measurement step at least once to obtain a temperature calibration curve between the set temperature and the corresponding actual temperature.

2. The acquisition method according to claim 1, characterized in that: The shape of the temperature calibration device is adapted to the shape of the wafer carrying surface of the wafer carrying device, and is used to measure the temperatures of multiple heating areas on the wafer carrying device.

3. The acquisition method according to claim 1, characterized in that: The surface of the wafer carrier has at least two heating areas, each of which corresponds to a temperature correction curve. The temperature measurement step comprises: The temperature calibration device is used to measure the current real temperature of each heating area respectively.

4. The acquisition method according to claim 1, characterized in that: Also includes: Acquire a verification set temperature, and take the verification set temperature as the actual temperature, and acquire a verification correction temperature corresponding to the verification set temperature according to the temperature correction curve; Using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the surface of the wafer carrier at the verification correction temperature; When the temperature is stable, the temperature calibration device is used to measure the current real verification temperature, and it is determined whether the difference between the current real verification temperature and the verification setting temperature is less than a first preset threshold value; When the difference between the current actual verification temperature and the verification setting temperature is less than a first preset threshold, it is determined that the verification setting temperature meets the specification.

5. The acquisition method according to claim 1, characterized in that: The surface of the wafer carrier device has at least two heating areas, each of the heating areas is provided with at least two temperature measuring points, and the method further includes: Acquire a verification set temperature, and take the verification set temperature as the actual temperature, and acquire a verification correction temperature corresponding to the verification set temperature according to the temperature correction curve; Using the temperature measured by the temperature detector as temperature control feedback, controlling the heater to heat the surface of the wafer carrier at the verification correction temperature; When the temperature is stable, the temperature calibration device is used to obtain the actual average value of the current real verification temperature of each temperature measuring point in each heating area and the regional range of the current real verification temperature of each temperature measuring point in each heating area, wherein the regional range is the difference between the highest temperature value and the lowest temperature value in the heating area; When the difference between each of the actual average values ​​and the verification set temperature is within a first preset range, and each of the regional extremes is within a second preset range, it is determined that the verification set temperature meets the specification.

6. The acquisition method according to claim 5, characterized in that: When there is a heating area where the difference between the actual average value and the verification set temperature is outside the first preset range, the method further includes: Correcting the actual average value of the heating area with a preset difference, taking the corrected actual average value as the real temperature, and calibrating the temperature correction curve; Obtaining a calibrated verification correction temperature corresponding to the verification setting temperature according to the calibrated temperature correction curve; Using the temperature measured by the temperature detector as temperature control feedback, the heater is controlled to heat the surface of the wafer carrier at the calibrated verification correction temperature; When the temperature is stable, the actual average value after calibration is measured using the temperature calibration device; Determining whether a difference between the actual average value after calibration and the verification set temperature is within a third preset range; If not, return to the step of correcting the actual average value of the heating area with the preset difference.

7. The acquisition method according to claim 6, characterized in that: When the difference between the calibrated actual average value and the verification set temperature is within the third preset range, the method further includes: Determine whether the ratio of the maximum regional range in the regional range of the current real verification temperature of each temperature measuring point in each heating area after calibration to the overall range of the wafer carrier is greater than or equal to a second preset threshold, the overall range being the difference between the highest temperature value and the lowest temperature value in the wafer carrier; If yes, the calibration is finished.

8. The acquisition method according to claim 7, characterized in that: When the ratio of the maximum regional range to the overall range of the wafer carrier is less than a second preset threshold, the method further includes: Obtain the maximum temperature and the minimum temperature of each heating area; Obtain, in each heating area, a heating area whose maximum temperature value is higher than the maximum temperature value of the heating area where the maximum regional range is located and whose first absolute value of the difference between the two is the largest, and a heating area whose minimum temperature value is lower than the minimum temperature value of the heating area where the maximum regional range is located and whose second absolute value of the difference between the two is the largest; Correct the current actual verification temperature of the heating area where the larger of the first absolute value and the second absolute value is located with a preset value to reduce the larger of the first absolute value and the second absolute value, and return to the step of determining whether the calibrated actual average value of each of the temperature measuring points in each of the heating areas is within a third preset range.

9. A temperature control method for a wafer carrier, characterized in that: include: Get the set heating temperature; Taking the set heating temperature as the actual temperature, obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve; wherein the temperature correction curve is obtained by using the obtaining method described in any one of claims 1 to 8; The temperature measured by the thermometer is used as temperature control feedback to control the heater to heat the wafer carrier at the corrected heating temperature; wherein the thermometer and the heater are arranged in the wafer carrier, the heater is used to heat the surface of the wafer carrier, and the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier.

10. The temperature control method according to claim 9, characterized in that: The surface of the wafer carrier has at least two heating areas, each of which has a corresponding heater. The step of taking the set heating temperature as the actual temperature and obtaining the corrected heating temperature corresponding to the set heating temperature according to the temperature correction curve is specifically as follows: Taking the set heating temperature as the actual temperature, and obtaining the corrected heating temperature corresponding to the set heating temperature of each heating area according to the temperature correction curve corresponding to each heating area; The step of using the temperature measured by the temperature detector as temperature control feedback to control the heater to heat the wafer carrier at the corrected heating temperature is specifically as follows: The temperature measured by the temperature detector is used as temperature control feedback to control each of the heaters to heat each of the heating areas at each of the calibrated heating temperatures.

11. An electronic device, characterized in that: The electronic device is electrically connected to a heater and a thermometer arranged in a wafer carrier, the heater is used to heat the surface of the wafer carrier, the thermometer is used to measure the temperature of the surface of the wafer carrier and is located below the wafer carrying surface of the wafer carrier, a temperature calibration device is arranged on the surface of the wafer carrier, the electronic device includes at least one memory and at least one processor, a computer program is stored in the memory, and the processor is used to execute the acquisition method described in any one of claims 1 to 8 according to the computer program.

12. A semiconductor device, characterized in that: include: A wafer carrying device, wherein a heater and a temperature detector are arranged in the wafer carrying device, wherein the heater is used to heat the surface of the wafer carrying device, and the temperature detector is used to measure the temperature of the surface of the wafer carrying device and is located below the wafer carrying surface of the wafer carrying device; as well as At least one memory and at least one processor, wherein the memory stores a computer program; the processor executes the computer program to implement the temperature control method according to claim 9 or 10.

13. The semiconductor device according to claim 12, wherein: The temperature measuring device is a temperature measuring optical fiber, and the temperature measuring point of the temperature measuring optical fiber is located below the wafer carrying surface of the wafer carrying device.

14. The semiconductor device according to claim 12, wherein: The wafer carrier comprises at least two heating areas, wherein the at least two heating areas comprise a circular area located in the middle of the wafer carrier and at least one annular area arranged around the circular area.

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