Display device

Abstract

A display device comprises a first substrate, a first light-emitting element, a barrier layer, a first shading layer, a second shading layer and a first dielectric layer. The first light-emitting element comprises a light-emitting layer, the first light-emitting element is arranged on the first substrate, the first substrate comprises a groove area, the first light-emitting element is arranged in the groove area, the barrier layer surrounds the first light-emitting element, and the barrier layer is provided with a top surface; the distance between the top surface and the first surface of the first substrate in the third direction is larger than the distance between the light-emitting layer and the first surface of the first substrate, the first light shielding layer comprises a first opening and is arranged on the first substrate and surrounds the first light-emitting element, the second light shielding layer is arranged on the first light shielding layer and is provided with a second opening, and the first dielectric layer is arranged on the second light shielding layer. The second light-emitting element has a first refractive index, and is disposed between the first light-shielding layer and the second light-shielding layer and on the first light-emitting element.

Description

Technical Field

[0001] The invention relates to a display device. Background Art

[0002] At present, for existing display devices, in order to improve the utilization rate of light from light-emitting elements, it is a common concept to use white materials and optical-mechanical structures that reflect and recycle light. However, with the current micro-LED mass transfer technology, it is impossible to avoid the offset of the micro-LED, resulting in the optical structure being unable to accurately correspond to the absolute position of the micro-LED, thereby causing the photoresist layer to cover the micro-LED, resulting in reduced light output efficiency or excessive withdrawal, greatly reducing the effect of optical gain, and also causing the metal electrode to be exposed and increase the reflectivity of the light-emitting element. In addition, when the micro-LED is miniaturized to vertical micro-LED, under the same equipment capacity, the coverage area ratio will become larger, thereby covering the surface of the micro-LED or withdrawing the design, which will seriously affect the subsequent metal wiring yield. At present, how to make the optical-mechanical structure ideally close to and cover the micro-LED without covering the light-emitting surface, so as to maintain low visual angle deviation and low reflection, and at the same time improve the packaging structure with higher efficiency to avoid photoelectric problems is very important. Summary of the invention

[0003] An object of the present invention is to provide a display device to solve at least one of the above problems.

[0004] The invention provides a display device, comprising a first substrate, a first light-emitting element, a blocking layer, a first light-shielding layer, a second light-shielding layer and a first medium layer. The first light-emitting element includes a light-emitting layer, the first light-emitting element is arranged on a first substrate, the first substrate includes a groove area, the first light-emitting element is arranged in the groove area, the barrier layer surrounds the first light-emitting element, the barrier layer has a top surface, the distance between the top surface and the first surface of the first substrate along the third direction is greater than the distance between the light-emitting layer and the first surface of the first substrate, the first light-shielding layer includes a first opening, is arranged on the first substrate and surrounds the first light-emitting element, the second light-shielding layer is arranged on the first light-shielding layer and has a second opening, the first dielectric layer has a first refractive index, is arranged between the first light-shielding layer and the second light-shielding layer and is located on the first light-emitting element, the first light-emitting element has a first length along the first direction and a second length along the second direction, the first opening has a third length along the first direction, the first opening has a fourth length along the second direction, the second opening has a fifth length along the first direction, the second opening has a sixth length along the second direction, the fifth length is greater than the third length, the sixth length is greater than the fourth length, the fifth length is greater than the first length, the sixth length is greater than the second length, the difference between the third length and the first length is less than or equal to 3 micrometers and greater than or equal to zero, and the difference between the fourth length and the second length is less than or equal to 3 micrometers and greater than or equal to zero.

[0005] Based on the above, in the display device of the embodiment of the present invention, the first light emitting element is arranged in the groove area, the barrier layer surrounds the first light emitting element, the distance between the top surface of the barrier layer and the first surface of the first substrate along the third direction is greater than the distance between the light emitting layer and the first surface of the first substrate, the first light shielding layer includes a first opening, the second light shielding layer is arranged on the first light shielding layer and has a second opening, the first dielectric layer has a first refractive index, is arranged between the first light shielding layer and the second light shielding layer and is located on the first light emitting element, the first light emitting element has a first length along the first direction and a second length along the second direction, the first opening has a third length along the first direction, the first opening has a fourth length along the second direction, the second opening has a fifth length along the first direction, the second opening has a sixth length along the second direction, the fifth length is greater than the third length, the sixth length is greater than the fourth length, the fifth length is greater than the first length, the sixth length is greater than the second length, the difference between the third length and the first length is less than or equal to 3 micrometers and greater than or equal to zero, and the difference between the fourth length and the second length is less than or equal to 3 micrometers and greater than or equal to zero. In this way, through the above design, the display device can have the performance of low viewing angle deviation and low reflection and can improve the packaging architecture more efficiently. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figures 1A to 1J A schematic diagram of a partial flow chart of a method for manufacturing a display device according to an embodiment of the present invention.

[0007] Figure 1K to Figure 1R A partial flow chart of a method for manufacturing a display device according to another embodiment of the present invention is shown.

[0008] Figure 2 FIG. 1 is a schematic top view of a display device according to an embodiment of the present invention.

[0009] Figure 3A It is a schematic cross-sectional view of the device along line II' in FIG. 1 .

[0010] Figure 3B It is a schematic cross-sectional view of the display device along line II-II' in FIG. 1 .

[0011] Figure 4A FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0012] Figure 4B FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0013] Figure 4C FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0014] Figure 4D FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0015] Figure 5A FIG. 4 is a schematic top view of a display device according to another embodiment of the present invention.

[0016] Figure 5B is based on Figure 5A Schematic diagram of a cross-section of the display device.

[0017] Figure 5C is based on Figure 5A Schematic diagram of a cross-section of the display device.

[0018] Figure 5D to Figure 5G Based on Figure 5B or Figure 5C Magnified schematic diagram of the lens layer.

[0019] Fig. 6A FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0020] Figure 6B FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0021] Figure 6C FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0022] Fig.6D FIG. 4 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention.

[0023] 7A to 7F FIG. 4 is a partial flow chart of a method for manufacturing a display device according to another embodiment of the present invention.

[0024] FIG. 8A to FIG. 8F FIG. 4 is a partial flow chart of a method for manufacturing a display device according to another embodiment of the present invention.

[0025] The reference numerals are as follows:

[0026] 100A, 100A-1, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I: Display device

[0027] 110: first substrate

[0028] 120, 130, 140, 160: insulation layer

[0029] 141, 143: Electrode

[0030] 145: first light emitting element

[0031] 150: Flat layer

[0032] 170: Second substrate

[0033] 180: Covering layer

[0034] A1: The first dielectric layer

[0035] BM1: First light shielding layer

[0036] BM2: Second light shielding layer

[0037] CA: Groove Area

[0038] CT: Color conversion layer

[0039] CF: Filter layer

[0040] D1: First direction

[0041] D2: Second direction

[0042] D3: Third direction

[0043] E1: First side

[0044] E2: Second side

[0045] E3: Third side

[0046] E4: The fourth side

[0047] LE: Light Emitting Layer

[0048] LEN1, LEN2, LEN3, LEN4: Lens layer

[0049] L1, L2, L3, L4, L5, L6, L7, L8, L9, L10, L11, L12, L13, L14: Length

[0050] H1, H2: Height

[0051] n1, n2, n3: refractive index

[0052] O1: First opening

[0053] O2: Second opening

[0054] PR: Photoresist layer

[0055] 140S1, S1: First surface

[0056] TR: Second dielectric layer

[0057] WB: Barrier layer

[0058] WBT, 145T: Top surface DETAILED DESCRIPTION

[0059] Figures 1A to 1R A partial flow chart of the method for manufacturing a display device according to the present invention. Figure 1A and Figure 1B The display device 100A includes a first substrate 110, an insulating layer 120, an insulating layer 130 and an insulating layer 140 are sequentially arranged on the first substrate 110, and an electrode 141 and an electrode 143 are arranged on the insulating layer 140. Figure 1A As shown, when viewed along the first direction D1, the first light emitting element 145 is electrically connected to the electrode 141 and the electrode 143. Figure 1B As shown, when observed along the second direction D2, the first light-emitting element 145 is electrically connected to the electrode 141. On the insulating layer 140, a flat layer 150 is disposed around the electrode 141 and the electrode 143 in the first direction D1 or around the electrode 141 in the second direction D2. The flat layer 150 does not overlap with the electrode 141 or the electrode 143 in the normal direction of the substrate 110. An insulating layer 160 covering the flat layer 150 is disposed on the flat layer 150, and then a blocking layer WB covering the insulating layer 140, the electrode 141, the electrode 143, the insulating layer 160 and the first light-emitting element 145 is disposed.

[0060] Please refer to Figure 1C and Figure 1D , define the height between the top surface 145T of the first light-emitting element 145 and the first surface 140S1 of the insulating layer 140 along the third direction D3 as H1, and the height between the top surface WBT of the barrier layer WB and the first surface 140S1 of the insulating layer 140 along the third direction D3 as H2. By utilizing the terrain difference, the barrier layer WB is wrapped and leveled along the terrain, so that in the normal direction of the substrate 110 (i.e., the third direction D3), the height of the barrier layer WB that does not overlap with the first light-emitting element 145 is lower, and the value of the height H2 is therefore smaller than the value of the height H1. In some embodiments, the ratio range of the height H2 to the height H1 is, for example, 70% to 50%.

[0061] Please refer to Figure 1E and Figure 1F Since the top surface 145T of the first light-emitting element 145 has a height difference with the top surface WBT of the barrier layer WB, the top surface 145T of the first light-emitting element 145 has a height difference with the top surface WBT of the barrier layer WB. The top surface 145T of the first light-emitting element 145 and part of the side surface of the first light-emitting element 145 are exposed after exposure and development by using the characteristic that the thin film on the micro-LED is easy to peel off. Please refer to Figure 1E and Figure 1F The remaining portion of the blocking layer WB will cover the first light emitting element 145 by itself, forming a blocking layer WB that is self-aligned with the position of the first light emitting element 145, so that the first light emitting element 145 is not affected by the displacement of the micro light emitting diode.

[0062] In the present embodiment, the height H1 of the first light-emitting element 145 is, for example, 10 microns, the height between the top surface of the WB barrier layer above the top surface 145T of the first light-emitting element 145 and the first surface 140S1 of the insulating layer 140, before development, is, for example, 15 microns, the ratio range of H1 to this height is, for example, 104% to 128%, and the height H2 of the barrier layer WB after development is, for example, 5 microns. By utilizing the structure and process of the above-mentioned encapsulated barrier layer WB, the problem of the first light-emitting element 145 being offset during the exposure and development process can be effectively avoided, thereby maintaining a stable light output efficiency of the first light-emitting element 145, which is about 28% higher than that of the conventional technology. In addition, since the offset of the first light-emitting element 145 is reduced, the light-emitting efficiency and mass production rate of the display device are significantly improved, thereby making the display device have the advantages of energy saving and reduced production costs.

[0063] Please refer to Figure 1G and Figure 1H , a first light shielding layer BM1 is disposed on the blocking layer WB and the first light emitting element 145, please refer to Fig. 1I and Figure 1J , using exposure and development technology, the first light shielding layer BM1 covering the top surface 145T of the first light emitting element 145 is removed to form a first opening O1 in the first light shielding layer BM1. In this way, the blocking layer WB can be completely close to and cover the first light emitting element 145 while the first light shielding layer BM1 does not cover the light emitting surface, thereby improving the light emitting efficiency of the display device.

[0064] Figure 1K to Figure 1R A partial flow chart of a method for manufacturing a display device according to another embodiment of the present invention. Figure 1K and Figure 1L In the display device 100A-1 of the present embodiment, a covering layer 180 is disposed on the blocking layer WB and the top surface 145T of the first light-emitting element 145. The covering layer 180 disposed on the top surface 145T of the first light-emitting element 145 is removed by using an exposure and development technique. Please refer to Fig.1O and Figure 1P , a first light-shielding layer BM1 is disposed on the covering layer 180 and the first light-emitting element 145, and the first light-shielding layer BM1 covering the top surface 145T of the first light-emitting element 145 is removed by using exposure and development technology, so that the first light-shielding layer BM1 forms a first opening O1. In this way, the blocking layer WB and the covering layer 180 can be completely close to and cover the first light-emitting element 145, and the first light-shielding layer BM1 does not cover the light-emitting surface, thereby improving the light-emitting efficiency of the display device.

[0065] Figure 2 FIG. 1 is a schematic top view of a display device according to an embodiment of the present invention. Figure 3A is based on Figure 2 A schematic cross-sectional view of the display device along line II'. Figure 3Bis based on Figure 2 The schematic diagram of the cross section of the display device along II-II'. Please also refer to Figure 2 , Figure 3A and Figure 3B The display device 100A further includes a second light shielding layer BM2 and a first dielectric layer A1. The first dielectric layer A1 is located on the first light emitting element 145. The first light emitting element 145 includes a light emitting layer LE. The light emitting layer LE may include an organic light emitting material layer (OLED) or an inorganic light emitting material, but is not limited thereto. In some embodiments, the light-emitting layer LE may include a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, an electron injection layer, etc., but is not limited thereto. The first light-emitting element 145 is disposed on the first substrate 110, and the display device includes a groove area CA. The first light-emitting element 145 is disposed in the groove area CA. The blocking layer WB surrounds the first light-emitting element 145. The distance between the top surface WBT of the blocking layer WB and the first surface S1 of the first substrate 110 along the third direction D3 is greater than the distance between the light-emitting layer LE and the first surface S1 of the first substrate 110 along the third direction D3. The first light-shielding layer BM1 includes a first opening O1, is disposed on the first substrate 110 and surrounds the first light-emitting element 145, the second light-shielding layer BM2 is disposed on the first light-shielding layer BM1, and has a second opening O2. The first dielectric layer A1 has a first refractive index n1, is disposed between the first light-shielding layer BM1 and the second light-shielding layer BM2 and is located on the first light-emitting element 145.

[0066] In an embodiment of the present invention, the first substrate 110 may be a circuit board, an active component substrate, or other plate-like structure that can be used to provide a driving signal and / or power to the first light-emitting element 145 and can support the first light-emitting element 145. In some embodiments, when the first substrate 110 is a circuit board, the first substrate 110 may include multiple layers of conductive circuit layers and multiple layers of insulating layers for separating the multiple layers of conductive circuit layers, but is not limited thereto. Specifically, the first substrate 110 includes an electrode 141 and an electrode 143 for electrically connecting the first light-emitting element 145, and the electrode 141 and the electrode 143 are located on the surface of the first substrate 110 facing the first light-emitting element 145. The first light-emitting element 145 can be coupled to the corresponding pad on the first substrate 110 through a conductive bonding material and electrically connected to the corresponding electrode.

[0067] The first light emitting element 145 is, for example, a light emitting diode. The light emitting diode may include, for example, an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (QD, which may be, for example, QLED, QDLED), fluorescence, phosphor or other suitable materials, and the materials may be arranged and combined in any way, but are not limited thereto. In some embodiments, the first light emitting element 145 may be a light emitting chip, and the first light emitting element 145 may be coupled to the first substrate 110 in the form of a chip on board (COB), that is, the first light emitting element 145 may be electrically connected to the circuit on the substrate 110.

[0068] Please refer to Figure 3A and Figure 3B The first light emitting element 145 has a first length L1 along the first direction D1 and a second length L2 along the second direction D2, the first opening O1 has a third length L3 along the first direction D1, the first opening O1 has a fourth length L4 along the second direction D2, the second opening O2 has a fifth length L5 along the first direction D1, the second opening O2 has a sixth length L6 along the second direction D2, the first side E1 and the second side E2 of the second light shielding layer BM2 have a seventh length L7 along the first direction D1, the third side E3 and the fourth side E4 of the second light shielding layer BM2 have an eighth length L7 along the second direction D2, the fifth length L5 is greater than the third length L3, the sixth length L6 is greater than the fourth length L4, the fifth length L5 is greater than the first length L1, the sixth length L6 is greater than the second length L2, the difference between the third length L3 and the first length L1 is less than or equal to 3 microns and greater than or equal to zero, and the difference between the fourth length L4 and the second length L2 is less than or equal to 3 microns and greater than or equal to zero.

[0069] The display device 100A also includes a second dielectric layer TR, which is arranged around the first dielectric layer A1. In some embodiments, the second dielectric layer TR may cover the second light shielding layer BM2 and the first dielectric layer A1, but is not limited thereto. The second dielectric layer TR is solid and has a second refractive index n2. The second refractive index n2 is greater than the first refractive index n1, and the first refractive index n1 is greater than 1. The second refractive index n2 is, for example, 1.5±0.1. The first dielectric layer A1 includes a low-refractive index medium, a solid, a gas, a vacuum or an organic compound. The first refractive index n1 is less than 1.4, and a preferred choice may be, for example, that the first refractive index n1 is less than 1.2. The first dielectric layer A1 is a low-density gas. The first dielectric layer A1 is, for example, air. The first dielectric layer A1 is helium, neon, argon, krypton, xenon or radon.

[0070] Figure 4A 1 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100B is similar to the display device 100A, and the main difference is that the display device 100B further includes a second substrate 170, the second substrate 170 is disposed on the first substrate 110, the second dielectric layer TR is located between the second substrate 170 and the insulating layer 160, the second dielectric layer TR is disposed around the first dielectric layer A1, the second light shielding layer BM2 is disposed on the second substrate 170, the second light shielding layer BM2 is located between the first light shielding layer BM1 and the second substrate 170, and the second substrate 170 is disposed on the first dielectric layer A1. The second substrate 170 has a third refractive index n3, and the absolute value of the difference between the third refractive index and the second refractive index n2 is less than or equal to 0.2.

[0071] Figure 4B 1 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100C is similar to the display device 100B, and the main difference is that the display device 100C further includes a color conversion layer CT, the color conversion layer CT has a first refractive index n1, the color conversion layer CT is disposed in the second opening O2 and the color conversion layer CT overlaps the first light-emitting element 145 in the normal direction of the first substrate 110, and the color conversion layer CT has a thirteenth length L13 along the first direction D1, and the thirteenth length L13 is less than 200% of the fifth length L5.

[0072] Figure 4C 100D is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100D is similar to the display device 100B, and the main difference is that the display device 100D further includes a filter layer CF, the filter layer CF is disposed in the second opening O2, and the filter layer CF overlaps the first light-emitting element 145 in the normal direction of the first substrate 110, and the filter layer CF has an eleventh length L11 along the first direction D1, and the eleventh length L11 is greater than the fifth length L5.

[0073] Figure 4D 1 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100E is similar to the display device 100B, and the main difference is that the display device 100E further includes a filter layer CF and a color conversion layer CT, the filter layer CF and the color conversion layer CT are disposed in the second opening O2, the filter layer CF is disposed on the color conversion layer CT, and the filter layer CF and the color conversion layer CT overlap the first light-emitting element 145 in the normal direction of the first substrate 110. In this embodiment, the color conversion layer CT has a second refractive index n2.

[0074] Figure 5A FIG. 4 is a schematic top view of a display device according to another embodiment of the present invention. Figure 5B and Figure 5C is based on Figure 5APlease also refer to 5A to Figure 5C .

[0075] The display device 100F is similar to the display device 100B, and the main difference is that the display device 100F further includes a photoresist layer PR and a lens layer LEN1. The photoresist layer PR is disposed between the second substrate 170 and the first substrate 110. The photoresist layer PR is located on the second light shielding layer BM2, the second dielectric layer TR and the first dielectric layer A1. The lens layer LEN1 is disposed in the second opening O2. The lens layer LEN1 is located on the first dielectric layer A1. The photoresist layer PR covers the lens layer LEN1. The lens layer LEN1 overlaps the first light-emitting element 145 in the normal direction of the first substrate 110. The lens layer LEN1 has a ninth length L9 along the first direction D1 and a tenth length L10 along the second direction. In some embodiments, when the display device 100F is a non-transparent display device, the fifth length L5 is less than the ninth length L9, the ninth length L9 may be less than 200% of the fifth length L5, the sixth length L6 may be less than the tenth length L10 and the tenth length L10 may be less than 200% of the sixth length L6. When the display device 100F is a transparent display device, the ninth length L9 may be less than the seventh length L7 and the tenth length L10 may be less than the eighth length L8.

[0076] Figure 5D to Figure 5G Based on Figure 5B or Figure 5C Magnified schematic diagram of the lens layer. Figure 5D In the display device 100F, the lens layer LEN2 may be a lens array layer including a plurality of lenses arranged along a first direction D1 . The photoresist layer PR covers the lens layer LEN2 and the lens layer LEN2 overlaps the first light emitting element 145 in the normal direction of the first substrate 110 .

[0077] exist Figure 5E In the display device 100F, the lens layer LEN3 may be a single lens, the photoresist layer PR covers the lens layer LEN1 , and the lens layer LEN1 overlaps the first light emitting element 145 in the normal direction of the first substrate 110 .

[0078] exist Figure 5E In the display device 100F, the lens layer LEN1 can be a Fresnel lens or a similar structure. Based on the process, the Fresnel lens has the characteristics of collimation, light collection and maximum main viewing angle brightness gain. The photoresist layer PR covers the lens layer LEN1 and the lens layer LEN1 overlaps the first light-emitting element 145 in the normal direction of the first substrate 110.

[0079] exist Figure 5EIn the display device 100F, the lens layer LEN4 may be a flat-top pyramid lens. The photoresist layer PR covers the lens layer LEN4 and the lens layer LEN4 overlaps the first light emitting element 145 in the normal direction of the first substrate 110 .

[0080] Fig. 6A 1 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100G is similar to the display device 100C, and the main difference is that the display device 100G further includes a photoresist layer PR and a lens layer LEN1. The photoresist layer PR is disposed between the second substrate 170 and the first substrate 110. The photoresist layer PR is located on the second light shielding layer BM2, the second dielectric layer TR and the color conversion layer CT. The lens layer LEN1 is disposed in the second opening O2 and is located on the color conversion layer CT. In this embodiment, the color conversion layer CT may have a third refractive index n3.

[0081] Figure 6B 1 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100H is similar to the display device 100D, and the main difference is that the display device 100H further includes a photoresist layer PR and a lens layer LEN1, the photoresist layer PR is disposed between the second substrate 170 and the first substrate 110, the photoresist layer PR is located on the second light shielding layer BM2, the second dielectric layer TR and the filter layer CF, and the lens layer LEN1 is disposed in the second opening O2 and on the filter layer CF.

[0082] Figure 6C and Fig.6D 1 is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. The display device 100I is similar to the display device 100E, and the main difference is that the display device 100I further includes a photoresist layer PR and a lens layer LEN1, the photoresist layer PR is disposed between the second substrate 170 and the first substrate 110, the photoresist layer PR is located on the second light shielding layer BM2 and the second dielectric layer TR, the filter layer CF and the color conversion layer CT, and the lens layer LEN1 is disposed in the second opening O2 and is located on the filter layer CF and the color conversion layer CT.

[0083] The lens layer LEN1 has a twelfth length L12 along the first direction D1, and the lens layer LEN1 has a fourteenth length L14 along the second direction D2. In some embodiments, when the display device 100I is a non-transparent display device, the sixth length L6 is less than the twelfth length L12, and the fourteenth length L14 is less than 200% of the sixth length L6. When the display device 100I is a transparent display device, the twelfth length L12 and the fourteenth length L14 are less than the eighth length L8. In the embodiment of the present invention, the twelfth length L12 and the fourteenth length L14 of the lens layer LEN1 are also applicable to the lens layers LEN2, LEN3 and LEN4, and the relationship between the lens layer LEN1 and other lengths (such as the sixth length L6 or the eighth length L8) is also applicable to LEN2, LEN3 and LEN4, but is not limited thereto.

[0084] 7A to 7F This is a partial flow chart of a method for manufacturing a display device according to another embodiment of the present invention. Figure 5B The structure is similar to that of Figure 5B For the same parts, only the differences are explained. Please refer to Fig. 7A The display device 100J is similar to the display device 100F, and the main difference is that the display device 100J has a second light shielding layer BM2 disposed on the surface of the second substrate 170 away from the first substrate 110. Figure 7B , using the full exposure and development technology, the second light shielding layer BM2 is formed with an opening O2, please refer to Figure 7C A photoresist layer PR is disposed in the second opening O2 and on the second light shielding layer BM2. The photoresist layer PR covers the second substrate 170. By using a full exposure and development technology, a lens layer LEN1, LEN2, LEN3 or LEN4 is formed on the photoresist layer PR at a position overlapping the first light emitting element 145 in the normal direction of the first substrate 110. Please refer to Figure 7F , the portion of the lens layer that does not overlap the first light emitting element 145 in the normal direction of the first substrate 110 is removed by using an exposure and development technology.

[0085] FIG. 8A to FIG. 8F 1 is a partial flow chart of a method for manufacturing a display device according to another embodiment of the present invention. The display device 100K is similar to the display device 100J, and the main difference is that the second light shielding layer BM2 in the display device 100K is disposed on the photoresist layer PR, that is, the lens layer is located between the second light shielding layer BM2 and the second substrate 170.

[0086] In summary, in the display device of the embodiment of the present invention, the distance between the top surface of the blocking layer and the first surface of the first substrate along the third direction is greater than the distance between the light-emitting layer and the first surface of the first substrate, the first light-shielding layer includes a first opening, the second light-shielding layer is disposed on the first light-shielding layer and has a second opening, the first dielectric layer has a first refractive index, is disposed between the first light-shielding layer and the second light-shielding layer and is located on the first light-emitting element, the first light-emitting element has a first length along the first direction and a second length along the second direction, the first opening has a third length along the first direction, the first opening has a fourth length along the second direction, the second opening has a fifth length along the first direction, the second opening has a sixth length along the second direction, the fifth length is greater than the third length, the sixth length is greater than the fourth length, the fifth length is greater than the first length, the sixth length is greater than the second length, the difference between the third length and the first length is less than or equal to 3 micrometers and greater than or equal to zero, and the difference between the fourth length and the second length is less than or equal to 3 micrometers and greater than or equal to zero. In this way, through the above design, the display device can have the performance of low viewing angle angular deviation and low reflection and at the same time can more efficiently improve the packaging architecture.

Claims

1. A display device, comprising: a first substrate; a first light emitting element, comprising a light emitting layer, disposed on the first substrate, wherein the display device comprises a groove area, and the first light emitting element is disposed in the groove area; a blocking layer surrounding the first light emitting element, wherein the blocking layer has a top surface, and a distance between the top surface and the first surface of the first substrate along a third direction is greater than a distance between the light emitting layer and the first surface of the first substrate; a first light shielding layer, including a first opening, disposed on the first substrate and surrounding the first light emitting element; a second light shielding layer, disposed on the first light shielding layer, and having a second opening; a first dielectric layer having a first refractive index, disposed between the first light shielding layer and the second light shielding layer and located on the first light emitting element, The first light-emitting element has a first length along the first direction and a second length along the second direction, the first opening has a third length along the first direction, the first opening has a fourth length along the second direction, the second opening has a fifth length along the first direction, and the second opening has a sixth length along the second direction, the fifth length is greater than the third length, the sixth length is greater than the fourth length, the fifth length is greater than the first length, the sixth length is greater than the second length, the difference between the third length and the first length is less than or equal to 3 microns and greater than or equal to zero, and the difference between the fourth length and the second length is less than or equal to 3 microns and greater than or equal to zero.

2. The display device as described in claim 1 further includes a second medium layer, which is arranged around the first medium layer, wherein the second medium layer has a second refractive index, the second refractive index is greater than the first refractive index, and the first refractive index is greater than 1. The display device as claimed in claim 1 , wherein the first dielectric layer comprises a gas and an organic compound. The display device as claimed in claim 1 , wherein the first refractive index is less than 1.

4. The display device as claimed in claim 1 , wherein the first refractive index is less than 1.

2. The display device as claimed in claim 5 , wherein the first dielectric layer is a low-density gas. The display device as claimed in claim 5 , wherein the first medium layer is air. 8 . The display device according to claim 5 , wherein the first dielectric layer is helium, neon, argon, krypton, xenon or radon. 9 . The display device as claimed in claim 1 , further comprising a second substrate, wherein the second light shielding layer is disposed on the second substrate and the second light shielding layer is located between the first light shielding layer and the second substrate.

10. The display device as described in claim 1 further includes a second dielectric layer and a second substrate, wherein the second dielectric layer is arranged around the first dielectric layer, the second substrate is arranged on the first substrate, the second dielectric layer has a second refractive index, the second substrate has a third refractive index, and the absolute value of the difference between the third refractive index and the second refractive index is less than or equal to 0.

2. 11 . The display device as claimed in claim 1 , further comprising a color conversion layer, wherein the color conversion layer is disposed in the second opening and the color conversion layer overlaps the first light emitting element in a normal direction of the first substrate. 12 . The display device of claim 1 , wherein the color conversion layer has the first refractive index. 13 . The display device as claimed in claim 1 , further comprising a filter layer, wherein the filter layer is disposed in the second opening and the filter layer overlaps the first light-emitting element in a normal direction of the first substrate.

14. The display device as described in claim 1 further includes a filter layer and a color conversion layer, wherein the filter layer and the color conversion layer are arranged in the second opening, the filter layer is arranged on the color conversion layer, and the filter layer and the color conversion layer overlap the first light-emitting element in the normal direction of the first substrate. The display device as claimed in claim 14 , wherein the color conversion layer has a second refractive index. 16 . The display device as claimed in claim 1 , further comprising a lens layer and a photoresist layer, wherein the lens layer is disposed on the second opening, the photoresist layer covers the lens layer, and the lens layer overlaps the first light-emitting element in a normal direction of the first substrate. The display device as claimed in claim 16 , wherein a refractive index of the lens layer is greater than a refractive index of the light blocking layer. The display device according to claim 16 , wherein the lens layer is a Fresnel lens. The display device according to claim 16 , wherein the lens layer is a stripe lens.

20. The display device according to claim 16, wherein the lens layer is a pyramid lens.

21. The display device of claim 20, wherein the pyramid lens has a flat top.

22. The display device as described in claim 1 further includes a lens layer and a photoresist layer, wherein the lens layer is arranged on the second opening, the lens layer is a lens array layer, the lens array layer includes a plurality of lenses arranged along a first direction, the photoresist layer covers the lens layer and the lens layer overlaps the first light-emitting element in the normal direction of the first substrate.

23. The display device as described in claim 1 further includes a filter layer, a color conversion layer and a lens layer, wherein the filter layer, the color conversion layer and the lens layer are arranged in the second opening, the filter layer is arranged on the color conversion layer, the lens layer is arranged on the filter layer, and the filter layer, the color conversion layer and the lens layer overlap the first light-emitting element in the normal direction of the first substrate.

24. The display device of claim 23, wherein the color conversion layer has a third refractive index.

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