Perovskite solar cell, preparation method thereof, photovoltaic module and photovoltaic system

Abstract

The invention relates to the technical field of solar cells, in particular to a perovskite solar cell, a preparation method thereof, a photovoltaic module and a photovoltaic system. The embodiment of the invention provides a perovskite solar cell. The perovskite solar cell is of a trans-perovskite solar cell structure. The perovskite solar cell comprises transparent conductive glass, a hole transport layer and a perovskite active layer which are stacked in sequence, and one side, far away from the hole transport layer, of the perovskite active layer is doped with electronegative ions. The surface of the perovskite light absorption layer is rich in electronegative ions to form field passivation, so that holes are prevented from entering transmission electron recombination in a conduction band of the electron transmission layer; and meanwhile, a metal dangling bond defect state on the surface of the perovskite active layer is filled, and the photoelectric conversion efficiency is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite solar cell and a preparation method thereof, a photovoltaic module, and a photovoltaic system. Background Art

[0002] Perovskite solar cells have become one of the most promising solar cells in the photovoltaic field due to their low preparation cost, high photoelectric conversion efficiency, and flexible device preparation. The current laboratory conversion efficiency has exceeded 26%. The more classic structure is ABX3, where A is an organic cation (usually MA + , FA + etc.), B is a metal cation (Pb +2 Sn +2 etc.), C is a bromide anion (I - Br - , Cl - wait).

[0003] When perovskite solar cells are in the air, the water and oxygen in the air will corrode the perovskite layer and produce defect states. The existence of defect states will promote the recombination of electron-hole pairs, thereby affecting the battery efficiency.

[0004] It should be noted that the above content is not necessarily prior art, nor is it intended to limit the scope of patent protection of this application. Summary of the invention

[0005] The embodiments of the present application provide a perovskite solar cell and a preparation method thereof, a photovoltaic module, and a photovoltaic system to solve or alleviate one or more of the technical problems raised above.

[0006] A first aspect of an embodiment of the present application provides a perovskite solar cell, wherein the perovskite solar cell is an inverted perovskite solar cell structure; The perovskite solar cell comprises a transparent conductive glass, a hole transport layer and a perovskite active layer stacked in sequence, and the side of the perovskite active layer away from the hole transport layer is doped with electronegative ions.

[0007] In the first aspect of the embodiments of the present application, field passivation is formed by the surface of the perovskite light absorbing layer being rich in electronegative ions, thereby preventing holes from entering the electron transport layer and recombining with the transport electrons in the conduction band; at the same time, because the electronegativity of the electronegative ions is stronger than that of the metal cations in the perovskite light absorbing layer, the metal dangling bond defect states on the surface of the perovskite active layer can be filled, thereby reducing Auger recombination, enhancing battery stability, and improving photoelectric conversion efficiency.

[0008] A second aspect of an embodiment of the present application provides a method for preparing a perovskite solar cell, comprising: Providing a transparent conductive glass with a hole transport layer on the surface; preparing a perovskite active layer on the hole transport layer; Performing a first annealing treatment on the entire transparent conductive glass including the perovskite active layer; After the first annealing treatment is completed, the entire transparent conductive glass including the perovskite active layer is used as a substrate, and negative ions are doped on the perovskite active layer by plasma enhanced chemical vapor deposition.

[0009] Thus, the perovskite solar cell according to the first aspect of the embodiment of the present application is obtained.

[0010] A third aspect of an embodiment of the present application provides a photovoltaic module, which includes a plurality of solar cells connected in series and / or in parallel; wherein at least one solar cell is the perovskite solar cell as described above.

[0011] A fourth aspect of an embodiment of the present application provides a photovoltaic system, comprising the photovoltaic assembly as described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0013] Figure 1 It is a schematic diagram of the structure of a perovskite solar cell provided in an embodiment of the present application; Figure 2 It is a flow chart of the method for preparing a perovskite solar cell provided in an embodiment of the present application.

[0014] Description of reference numerals: 1-transparent conductive glass; 2-hole transport layer; 3-perovskite active layer; 4-electron transport layer; 5-electrode. DETAILED DESCRIPTION

[0015] Embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, for clarity, the sizes of layers, regions, elements and their relative sizes may be exaggerated. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0016] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not mean that the present disclosure necessarily has the first element, component, region, layer or part.

[0017] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0018] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0019] In the present application, when it comes to a numerical interval (i.e., a numerical range), unless otherwise specified, the distribution of the optional numerical values ​​in the numerical interval is considered to be continuous, and includes the two numerical endpoints (i.e., the minimum and maximum values) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to an integer in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical range disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows for broadly including quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0020] In order to improve the problem of poor stability of the perovskite active layer in perovskite cells, the present application targets an inverted perovskite solar cell, and uses a plasma enhanced chemical vapor deposition (PECVD) method to passivate the surface of the perovskite active layer after the first sintering, so that the surface is doped with electronegative ions to form field passivation, thereby inhibiting the recombination of electron-hole pairs.

[0021] The embodiments of the present application provide a perovskite solar cell and a method for preparing the same, a photovoltaic module, and a photovoltaic system. See below for details.

[0022] Hereinafter, exemplary embodiments according to the present application will be described in more detail with reference to the accompanying drawings. It should be noted that these exemplary embodiments can be implemented in many different forms and should not be construed as being limited to the embodiments described herein.

[0023] like Figure 1 As shown, a first aspect of an embodiment of the present application provides a perovskite solar cell, wherein the perovskite solar cell is an inverted perovskite solar cell structure; The perovskite solar cell comprises a transparent conductive glass 1, a hole transport layer 2 and a perovskite active layer 3 which are stacked in sequence, and the side of the perovskite active layer away from the hole transport layer is doped with electronegative ions.

[0024] In the first aspect of the embodiment of the present application, electronegative ions are doped on the side of the perovskite active layer 3 away from the hole transport layer 2 for passivation, and field passivation is formed by the surface of the perovskite light absorbing layer being rich in electronegative ions, so as to prevent holes from entering the transport electrons in the conduction band of the electron transport layer 4 for recombination; at the same time, the electronegativity of the electronegative ions is stronger than that of the metal cations in the perovskite light absorbing layer, so that the electronegativity can fill the metal dangling bond defect states on the surface of the perovskite active layer 3, reduce Auger recombination, enhance battery stability, and improve photoelectric conversion efficiency.

[0025] It is worth noting that electronegative ions refer to ions whose electronegativity is stronger than that of metal cations in the perovskite light-absorbing layer.

[0026] In some embodiments, in a perovskite solar cell, the electronegative ions include H + 、Ti 2+ 、Al 3+ Thus, the electronegative ions are positively charged, and can form an electric field with a field strength from top to bottom on the surface of the perovskite, which is beneficial to suppress the recombination of carriers generated on the perovskite active layer 3 during transportation to a certain extent.

[0027] In some embodiments, in a perovskite solar cell, the perovskite active layer 3 includes FA x Cs 1- x PbB y I 3-y , where x=0.6-1, for example, x is 0.6, 0.7, 0.8, 0.9, 1, etc.; y=0-0.6, y is 0, 0.2, 0.3, 0.5, 0.6, etc. Thus, high conversion efficiency is achieved.

[0028] In some embodiments, in a perovskite solar cell, the thickness of the perovskite active layer 3 is 1 nm to 1000 nm, for example, 1 nm, 100 nm, 500 nm, 750 nm, 1000 nm, which is more conducive to improving the conversion efficiency.

[0029] In some embodiments, in the perovskite solar cell, the hole transport layer 2 includes a composition of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT) and polystyrenesulfonate (PSS), NiO x , 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (SpiroOMeTAD). Thus, the extraction and transmission of holes are facilitated.

[0030] In some embodiments, in the perovskite solar cell, the thickness of the hole transport layer 2 is 1 nm to 40 nm, for example, 1 nm, 5 nm, 10 nm, 25 nm, 40 nm, etc. This facilitates the extraction and transportation of holes.

[0031] In some embodiments, the perovskite solar cell further comprises: an electron transport layer 4 and an electrode 5; the hole transport layer 2, the perovskite active layer 3, the electron transport layer 4 and the electrode 5 are sequentially stacked on the transparent conductive glass 1. Thus, an inverted perovskite solar cell is formed.

[0032] In some embodiments, the perovskite solar cell satisfies at least one of the following characteristics: (1) the transparent conductive glass 1 includes one of indium tin oxide conductive glass and fluorine-doped SnO2 conductive glass; (2) the thickness of the transparent conductive glass 1 is 1.0 mm to 1.5 mm. (5) the electron transport layer 4 includes at least one of carbon 60, carbon 60 derivatives, carbon 70, and SnO2; (6) the thickness of the electron transport layer 4 is 5 nm to 50 nm; (7) the electrode 5 includes one of Ag, Au, Cu, Al, indium tin oxide, silver nanowires, and carbon materials. This is conducive to improving the comprehensive performance of the perovskite solar cell.

[0033] A second aspect of the present application provides a method for preparing a perovskite solar cell, see Figure 2 , Figure 2 As a flow chart, the method for preparing a perovskite solar cell includes the following operations: S1. providing a transparent conductive glass having a hole transport layer on the surface; S2, preparing a perovskite active layer on the hole transport layer by spin coating; In some specific embodiments, an organic solvent is used as a carrier of the perovskite precursor solution; specifically, the organic solvent may include N,N-dimethylformamide (DMF), γ-butyrolactone (GBL) and / or dimethyl sulfoxide (DMSO). As a result, the organic solvent has good solubility and can form a ligand with the perovskite active material, which can delay the crystallization of the perovskite during the spin coating process and promote the formation of a high-quality perovskite active layer.

[0034] In some specific embodiments, a one-step / two-step spin coating method can be used to prepare the perovskite active layer, and the perovskite active layer can include FA x Cs 1-x PbB y I 3-y , where x=0.6~1, for example, x is 0.6, 0.7, 0.8, 0.9, 1, etc.; y=0~0.6, y is 0, 0.2, 0.3, 0.5, 0.6, etc.

[0035] S3, subjecting the entire transparent conductive glass including the perovskite active layer to a first annealing treatment, thereby promoting the crystallization of the perovskite thin film.

[0036] Preferably, the first annealing treatment includes: a temperature of 90°C to 120°C, for example, 90°C, 100°C, 110°C, 120°C, etc.; a treatment time of 10min to 15min, for example, 10min, 12min, 15min, etc.; an atmosphere of inert gas, for example, nitrogen.

[0037] S4. After the first annealing treatment is completed, the entire transparent conductive glass including the perovskite active layer is used as a substrate, and electronegative ions are doped into the perovskite active layer by plasma enhanced chemical vapor deposition; thereby, electronegative ions are doped on the perovskite active layer.

[0038] In some specific embodiments, the use of plasma enhanced chemical vapor deposition to deposit electronegative ions on the perovskite active layer includes: controlling the flow rate of the donor gas to be 3.5slm to 10slm, for example, 3.5slm, 5slm, 7.5slm, 9slm, 10slm, etc.; the temperature of the plasma enhanced chemical vapor deposition is 300°C to 400°C, for example, 300°C, 350°C, 400°C, etc.; the time of the plasma enhanced chemical vapor deposition is 30s to 50s, for example, 30s, 35s, 40s, 50s, etc. Thus, the donor gas is converted into plasma, and then the electronegative ions in the plasma are attached to the surface of the perovskite active layer to form electronegative ions, thereby filling the surface defect states, and forming field passivation to inhibit the recombination of electron-hole pairs.

[0039] Exemplarily, the donor gas includes at least one of hydrogen, TiCl 4 , and trimethylaluminum (TMA).

[0040] It is worth mentioning that hydrogen is a gas at room temperature; trimethylaluminum is a liquid at room temperature and can be vaporized to become a gas under its saturated vapor pressure; TiCl4 is a liquid at room temperature and can be vaporized to become a gas under its saturated vapor pressure.

[0041] S5. After doping with electronegative ions, an electron transport layer is prepared on the perovskite active layer. For example, the electron transport layer can be prepared by a sol-gel method combined with a second annealing treatment.

[0042] In some specific embodiments, the second annealing treatment includes: an inert gas atmosphere; a second annealing temperature of 100°C to 120°C, for example, 100°C, 110°C, 120°C, etc.; a second annealing time of 3min to 10min, for example, 3min, 5min, 8min, 10min, etc.

[0043] S6. Evaporation electrode.

[0044] The following will conduct performance tests on the perovskite solar cells provided in the embodiments of the present application and related comparative examples.

[0045] [Example 1] The specific preparation process is: Step 1: Provide FTO with a thickness of 1 mm as transparent conductive glass, and prepare NiO with a thickness of 30 nm on FTO by sol-gel method. x Thin film, i.e., hole transport layer; Step 2: Prepare a 500nm perovskite active layer by one-step spin coating. The perovskite active layer includes FA x Cs 1- x PbB y I 3-y , where x=0.6, y=0.6; Step 3: Perform a first annealing treatment in a nitrogen atmosphere, with a first annealing temperature of 100° C. and a first annealing time of 15 min; Step 4: Plasma-enhanced chemical vapor deposition was used to fix the FTO containing the hole transport layer and the perovskite active layer on the graphite boat. H2 was used as the donor gas with a flow rate of 10 slm, a temperature of 300 °C, and a time of 50 s. H2 was ionized to H at high temperature. + , combined with the surface of the perovskite active layer, doped with electronegative ions; Step 5: After cooling, a 20 nm thick carbon 60 electron transport layer is prepared on the perovskite active layer by a sol-gel method; Step 6: Perform a second annealing treatment in a nitrogen atmosphere at a temperature of 100° C. for 5 min. Step 7: Perform Ag electrode evaporation.

[0046] [Example 2] The rest is the same as Example 1, except that in step 4, H2 is replaced by TiCl4, the flow rate of TiCl4 is 3.5 slm, the temperature is 400°C, and the time is 30 s.

[0047] [Example 3] The rest is the same as Example 1, except that in step 4, H2 is replaced by TMA, the flow rate of TMA is 8 slm, the temperature is 350°C, and the time is 40 s.

[0048] [Comparative Example 1] The rest is the same as Example 1, except that there is no step 4.

[0049] IV tests were performed on Examples 1 to 3 and Comparative Example 1. The IV tests were performed according to the rapid measurement method in T / CPIA 0032--2022. The test light source was AM1.5G and the light intensity was 100mW / cm 2 Tested under the following conditions, the battery size is 10cm*10cm and the effective area is 10cm 2(determined by etching and silver area), the obtained data are shown in Table 1.

[0050] Table 1:

[0051] It can be seen from Table 1 that the open circuit voltage, short circuit current and fill factor of Example 1 are improved compared with those of Comparative Example 1. The reason may be that H + It adheres to the surface of the perovskite layer to fill the surface defect states, inhibits Auger recombination, increases interface contact, is conducive to the improvement of short-circuit current (Isc) and fill factor (FF), and forms field passivation to inhibit electron recombination at the interface of hole transport layer / perovskite active layer / electron transport layer; Example 2 has a slightly higher efficiency than Example 1, but the current is lower, which may be due to Ti 2+ and Pb 2+ The lattice is not much different, Ti 2+ Enter Pb 2+ The lattice position may cause the perovskite light absorption layer to be damaged, affecting the generation of photogenerated carriers; Example 3 has the highest efficiency, Al 3+ It has the lowest electronegativity, and has a strong ability to attract electrons while filling defects, which is beneficial to the transmission of carriers at the interface of perovskite layer / electron transport layer.

[0052] The embodiment of the present application may also provide a photovoltaic module (not shown), the photovoltaic module comprising a plurality of solar cells connected in series and / or in parallel; wherein at least one solar cell is a perovskite solar cell as described above. A plurality of solar cells in series form a cell string, and adjacent perovskite solar cells may be connected together by string welding.

[0053] The embodiment of the present application can provide a photovoltaic system, including the photovoltaic components in any of the above embodiments. The advantages of the above photovoltaic components are also possessed by the photovoltaic system, which will not be repeated here. The above photovoltaic system has a wide range of applications, not only limited to photovoltaic power stations, such as ground power stations, rooftop power stations and water power stations, but also includes various equipment and devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars and solar buildings. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be used in all fields where solar energy is required for power generation. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple photovoltaic components. For example, multiple photovoltaic components may form multiple photovoltaic arrays. The photovoltaic array is connected to a junction box. The junction box can converge the current generated by the photovoltaic array. The converged current flows through the inverter and is converted into the alternating current required by the mains power grid, and then connected to the mains network to realize solar power supply.

[0054] It should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The orientation words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0055] It should also be noted that "one embodiment", "another embodiment", "embodiment", etc. mentioned in this application refer to the specific features, structures or characteristics described in conjunction with the embodiment included in at least one embodiment generally described in this application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in conjunction with any embodiment, it is claimed that the realization of such feature, structure or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0056] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0057] It should also be noted that the above are only preferred embodiments of the present application, and the patent protection scope of the present application is not limited thereto. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A perovskite solar cell, characterized in that: The perovskite solar cell is an inverted perovskite solar cell structure; The perovskite solar cell comprises a transparent conductive glass, a hole transport layer and a perovskite active layer stacked in sequence, and the side of the perovskite active layer away from the hole transport layer is doped with electronegative ions.

2. The perovskite solar cell according to claim 1, characterized in that The electronegative ions include H + 、Ti 2 + 、Al 3+ At least one of .

3. The perovskite solar cell according to claim 1, characterized in that The perovskite active layer includes FA x Cs 1-x PbB y I 3-y , where x = 0.6 to 1, y = 0 to 0.6; and / or The thickness of the perovskite active layer is 1 nm to 1000 nm.

4. The perovskite solar cell according to claim 1, characterized in that: The hole transport layer includes a composition of poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid) and polystyrene sulfonate, NiO x , at least one of 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene; and / or The thickness of the hole transport layer is 1 nm to 40 nm.

5. The perovskite solar cell according to claim 1, characterized in that: The perovskite solar cell further comprises: an electron transport layer and an electrode; The electron transport layer is located on the side of the perovskite active layer doped with electronegative ions; The electrode is located on a side of the electron transport layer away from the perovskite active layer.

6. The perovskite solar cell according to claim 5, characterized in that: Meet at least one of the following characteristics: (1) The transparent conductive glass comprises indium tin oxide conductive glass or fluorine-doped SnO2 conductive glass; (2) The thickness of the transparent conductive glass is 1.0mm to 1.5mm; (3) The electron transport layer includes at least one of carbon 60, carbon 60 derivatives, carbon 70, and SnO2; (4) The thickness of the electron transport layer is 5 nm to 50 nm; (5) The electrode includes one of Ag, Au, Cu, Al, indium tin oxide, and silver nanowire.

7. A method for preparing a perovskite solar cell according to any one of claims 1 to 6, characterized in that: The following operations are included: Providing a transparent conductive glass with a hole transport layer on the surface; preparing a perovskite active layer on the hole transport layer; Performing a first annealing treatment on the entire transparent conductive glass including the perovskite active layer; After the first annealing treatment is completed, the entire transparent conductive glass including the perovskite active layer is used as a substrate, and negative ions are doped on the perovskite active layer by plasma enhanced chemical vapor deposition.

8. The method for preparing a perovskite solar cell according to claim 7, characterized in that: The use of plasma enhanced chemical vapor deposition to dope electronegative ions on the perovskite active layer satisfies at least one of the following conditions: The flow rate of the donor gas is 3.5slm to 10slm; The temperature of the plasma enhanced chemical vapor deposition is 300° C. to 400° C.; The time of the plasma enhanced chemical vapor deposition is 30s to 50s.

9. The method for preparing a perovskite solar cell according to claim 8, characterized in that: The donor gas includes at least one of H2, TiCl4, and trimethylaluminum.

10. The method for preparing a perovskite solar cell according to claim 9, characterized in that: The first annealing treatment comprises: The atmosphere is an inert gas, the first annealing temperature is 80° C. to 120° C., and the first annealing time is 15 min to 20 min.

11. A photovoltaic module, characterized in that: The photovoltaic module comprises a plurality of solar cells connected in series and / or in parallel; wherein at least one solar cell is a perovskite solar cell according to any one of claims 1 to 6.

12. A photovoltaic system, characterized in that: The photovoltaic system comprises the photovoltaic assembly according to claim 11.

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