Method for manufacturing display device and display device

Abstract

The invention relates to a method for manufacturing a display device and the display device. A method of manufacturing a display device includes manufacturing a display panel including a plurality of quantum dot light emitting devices, exposing the display panel to resin smoke, and bonding a protective layer on the display panel.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0146341 filed in the Korean Intellectual Property Office on October 30, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present disclosure relate to methods of manufacturing display devices, and for example, to methods of manufacturing display devices including quantum dot light emitting devices (QD-LEDs). Embodiments of the present disclosure also relate to display devices including quantum dot light emitting devices. Background Art

[0004] Unlike bulk materials, nanoparticles have physical properties (eg, energy band gap and / or melting point, etc.) that are intrinsic characteristics of the nanoparticles and that may vary depending on the particle size.

[0005] For example, semiconductor nanocrystals (also referred to as quantum dots) may emit light having a wavelength (eg, a specific wavelength), and the wavelength may correspond to the size of the quantum dot when receiving light energy or electrical energy.

[0006] Accordingly, quantum dots can be used as light emitters that emit light having a set or predetermined wavelength. Summary of the invention

[0007] An aspect of one or more embodiments of the present disclosure is directed to a display device including a quantum dot light emitting device, which can improve performance of the display device.

[0008] An aspect of one or more embodiments of the present disclosure is directed to a method of manufacturing a display device including a quantum dot light emitting device.

[0009] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0010] A method of manufacturing a display device according to one or more embodiments of the present disclosure includes manufacturing a display panel including a plurality of quantum dot light emitting devices, exposing the display panel to resin smoke, and bonding a protective layer on the display panel.

[0011] In one or more embodiments, the resin fume may include at least one of acrylic acid, acetic acid, methacrylic acid, and isobornyl methacrylate.

[0012] In one or more embodiments, the resin fume may include at least one of acrylic acid and methacrylic acid.

[0013] In one or more embodiments, the protective film may include transparent glass.

[0014] In one or more embodiments, the protective film may be attached to the display panel via a sealant disposed adjacent to an edge of the display panel and / or an edge of the protective film.

[0015] A display device according to one or more embodiments of the present disclosure includes a display panel including a plurality of quantum dot light-emitting devices, the display panel including a resin adsorbed on the quantum dot light-emitting devices by resin smoke (for example, the resin adsorbed on the quantum dot light-emitting devices is a smoke-adsorbed resin), a protective film on the display panel, and a sealant arranged between the display panel and the protective film and adjacent to the edges of the display panel and the protective film.

[0016] In one or more embodiments, the resin fume may include at least one of acrylic acid, acetic acid, methacrylic acid, and isobornyl methacrylate.

[0017] In one or more embodiments, the resin fume may include at least one of acrylic acid and methacrylic acid.

[0018] In one or more embodiments, the protective film may include transparent glass.

[0019] In one or more embodiments, a plurality of quantum dot light emitting devices may each include an electron assisting layer surface-modified with a resin.

[0020] A method of manufacturing a display device according to one or more embodiments of the present disclosure includes manufacturing a display panel including a plurality of quantum dot light emitting devices, exposing the display panel to resin fumes, and sealing the display panel with a sealant.

[0021] In one or more embodiments, the resin fume may include at least one of acrylic acid, acetic acid, methacrylic acid, and isobornyl methacrylate.

[0022] In one or more embodiments, the resin fume may include at least one of acrylic acid and methacrylic acid.

[0023] In one or more embodiments, the sealing of the display panel may include adhering a protective film on the display panel.

[0024] A display device according to one or more embodiments of the present disclosure includes a display panel including a plurality of quantum dot light-emitting devices, a protective film on the display panel, and a sealant between the display panel and the protective film and adjacent to the edges of the display panel and the protective film, wherein the display panel and the protective film are separated from each other by an air layer.

[0025] In one or more embodiments, the display panel may include a resin adsorbed on the quantum dot light emitting device through resin fume.

[0026] In one or more embodiments, the resin fume may include at least one of acrylic acid, acetic acid, methacrylic acid, and isobornyl methacrylate.

[0027] In one or more embodiments, the resin fume may include at least one of acrylic acid and methacrylic acid.

[0028] In one or more embodiments, the protective film may include transparent glass.

[0029] In one or more embodiments, a plurality of quantum dot light emitting devices may each include an electron assisting layer surface-modified with a resin.

[0030] According to one or more embodiments of the present disclosure, the performance of a display device including a quantum dot light emitting device may be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic cross-sectional view of a display device according to one or more embodiments of the present disclosure.

[0032] Figure 2 The present invention is a schematic diagram showing a manufacturing process of a display device according to one or more embodiments of the present disclosure.

[0033] Figure 3 Graph showing changes in characteristics of a red pixel according to sputtering time in an embodiment of the present disclosure.

[0034] Figure 4 Graph showing changes in characteristics of a blue pixel according to sputtering time in an embodiment of the present disclosure.

[0035] Figure 5 FIG. 4 is a graph showing changes in characteristics of a green pixel according to a sputtering time in an embodiment of the present disclosure.

[0036] Figure 6 is a schematic cross-sectional view of a quantum dot light emitting device in a display panel according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0037] The present disclosure can be modified in many alternative forms, and therefore specific embodiments will be illustrated in the drawings and described in more detail. However, it should be understood that this is not intended to limit the present disclosure to the particular form disclosed, but is intended to cover all modifications, equivalents and alternatives that fall within the spirit and scope of the present disclosure.

[0038] Hereinafter, example embodiments will be described in more detail with reference to the accompanying drawings. However, the present disclosure may be implemented in a variety of different forms and should not be construed as being limited to the embodiments illustrated herein. Instead, these embodiments are provided only as examples so that the present disclosure will be thorough and complete, and will fully convey the aspects and features of the present disclosure to those skilled in the art. Accordingly, processes, elements, and techniques that are not necessary for a person of ordinary skill in the art to fully understand the aspects and features of the present disclosure may not be described.

[0039] In order to clearly explain the present disclosure, parts irrelevant to the description are not provided, and the same or similar components throughout the specification may be given the same reference numerals. Unless otherwise noted, the same reference numerals represent the same elements throughout the attached drawings and written descriptions, and therefore, repeated descriptions thereof may not be provided.

[0040] In addition, for the convenience of explanation, the size and thickness of each component shown in the drawings may be exaggerated, so the present disclosure is not limited thereto. In particular, in the drawings, the thickness may be magnified and exaggerated to clearly express various layers and regions and facilitate explanation.

[0041] It will be understood that when an element (such as a layer, film, region, plate, or substrate) is referred to as being "on" or "above" another element (such as a layer, film, region, plate, or substrate), it can be directly on or above the other element (such as a layer, film, region, plate, or substrate), or one or more intervening elements may be present. In addition, it will be understood that when an element is referred to as being "between" two elements, it can be the only element between the two elements, or one or more intervening elements may also be present. Conversely, if (for example, when) an element is referred to as being "directly on," "directly on," or "directly over" another element, there are no intervening elements between them.

[0042] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the spirit and scope of the present disclosure, the first element, component, region, layer or part described below may be referred to as a second element, component, region, layer or part.

[0043] For ease of explanation, spatially relative terms such as "on" and "above" may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figure. It will be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is turned over, the elements described as "below" or "below" other elements or features will then be oriented "above" other elements or features. Therefore, the exemplary terms "below" and "below" may include both above and below orientations. The device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations) and the spatially relative descriptors used in this article should be interpreted accordingly.

[0044] It will be further understood that the terms “comprises,” “comprising,” “include,” “including,” “have,” and “having,” when used in the present specification, indicate the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0045] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0046] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Unless otherwise expressly stated in the present disclosure, phrases such as "at least one of...", "a plurality of...", "one of...", and other prepositional phrases, when preceding or following a list of elements, should be understood to include disjuncts if written as a conjunction list, and vice versa. For example, the expression "at least one of a, b, and c", "a, b and / or c", "one selected from the group consisting of: a, b, and c", "selected from at least one of a, b, and c", "at least one from a, b, and c", "from one of a, b, and c", "at least one from a to c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0047] In the present disclosure, when the particles are spherical, "diameter or size" indicates the particle diameter or average particle diameter, and when the particles are non-spherical, "diameter or size" indicates the major axis length or average major axis length. The diameter (or size) of the particles can be measured using a scanning electron microscope or a particle size analyzer. As a particle size analyzer, for example, a HORIBA, LA-950 laser particle size analyzer can be used. When the size of the particles is measured using a particle size analyzer, the average particle diameter (or size) is referred to as D 50 . D 50 Refers to the average diameter (or size) of particles whose cumulative volume corresponds to 50% by volume in a particle size distribution (e.g., cumulative distribution), and refers to the value of the particle size corresponding to 50% from the smallest particle size when the total number of particles is 100% in a distribution curve accumulated in the order from the smallest particle size to the largest particle size.

[0048] In addition, throughout the specification, if (for example, when) "on a plane" is mentioned, this means when the target portion is viewed from above, and when "in a cross section" is mentioned, this means when a cross section vertically cutting the target portion is viewed from the side.

[0049] First, refer to Figure 1 and Figure 2 A display device according to one or more embodiments of the present disclosure is described in more detail.

[0050] Figure 1 is a schematic cross-sectional view of a display device according to one or more embodiments of the present disclosure, and Figure 2 The present invention is a schematic diagram showing a manufacturing process of a display device according to one or more embodiments of the present disclosure.

[0051] refer to Figure 1 , a display device according to one or more embodiments of the present disclosure may include a display panel 1 and a protective film 2 , and a sealant 3 disposed near an edge (eg, adjacent to an edge) between the display panel 1 and the protective film 2 .

[0052] There is no separate encapsulation resin between the display panel 1 and the protection film 2 , so that the display panel 1 and the protection film 2 may be in direct contact or spaced apart by an air layer.

[0053] The display panel 1 may include a plurality of quantum dot light emitting devices, and may display images by controlling emission of the quantum dot light emitting devices.

[0054] The protection film 2 may include transparent glass or the like, and may be attached to the display panel 1 through the sealant 3 .

[0055] There may be a space between the display panel 1 and the protection film 2 .

[0056] In order to manufacture such a display apparatus, the display panel 1 including a plurality of quantum dot light emitting devices may be first manufactured, and then exposed to resin fume to be coated with resin.

[0057] The process can be carried out in a closed space. Figure 2 , a dispenser 14 that emits resin smoke may be installed on the ground in the closed space 10 , and a support member 12 on which the display panel 1 may be placed may be installed on a side wall of the closed space 10 .

[0058] Thereafter, the manufactured display panel 1 may be placed on the support 12, and the auxiliary panel 30 coated with the resin may be placed on the dispenser 14. The display panel 1 may be left until a suitable or appropriate amount of resin is adsorbed on the display panel 1 (for example, the resin adsorbed on the display panel 1 (for example, the resin adsorbed on the quantum dot light emitting device) is a smoke adsorbing resin).

[0059] Resin fumes may include acrylic acid, acetic acid, methacrylic acid and / or isobornyl methacrylate, among others.

[0060] The acrylic component and the methacrylic component can improve the characteristics of the electron transport layer of the quantum dot light-emitting device of the display panel 1 by filling the oxygen vacancies of the metal oxide (e.g., zinc-metal-oxide (ZMO)) of the quantum dot light-emitting device (e.g., the resin is adsorbed on (to) the surface of the metal oxide nanoparticles (nanoscale) used in the electron transport layer of the quantum dot light-emitting device 100, so that the metal oxide nanoparticles are surface-modified with the resin, as described in more detail below).

[0061] In addition, since the quantum dot light-emitting device can be oxidized by these acid components, a vacuum level shift can occur, and thus the electron barrier can be reduced, thereby improving the characteristics of the electron transport layer.

[0062] After leaving the display panel 1 in the resin fume in the closed space for a suitable or appropriate period of time as described above, the protective film 2 may be attached to the surface of the display panel 1 using the sealant 3, thereby completing the display device.

[0063] At this time, a separate encapsulation resin may not be used between the display panel 1 and the protective film 2 , so that stains that may occur on the display device due to the encapsulation resin may be suppressed or reduced.

[0064] Now, refer to Figures 3 to 5 The embodiments of the present disclosure are described in more detail. Figures 3 to 5 In the , "CPL" refers to capping layer, "CA" refers to resin, ZMO refers to zinc magnesium oxide as zinc-metal-oxide, "QD" refers to quantum dot, "HTL" refers to hole transport layer, and "HIL" refers to hole injection layer. Figures 3 to 5, the horizontal axis represents the sputtering time, and the vertical axis represents the intensity.

[0065] Figure 3 Graph showing changes in characteristics of a red pixel according to sputtering time in an embodiment of the present disclosure, Figure 4 is a graph showing changes in the characteristics of a blue pixel according to a sputtering time in an embodiment of the present disclosure, and Figure 5 FIG. 4 is a graph showing changes in characteristics of a green pixel according to a sputtering time in an embodiment of the present disclosure.

[0066] In the comparative example, a drop of sealing resin was dropped on the surface of the manufactured display panel, and then a protective film was placed and pressed so that the resin could be evenly spread over the surface.

[0067] As a result, desired or appropriate device characteristics are not obtained, or even if desired or appropriate device characteristics are obtained, stains (eg, spots) may appear on the display panel.

[0068] However, in the case of the display device manufactured according to the embodiment of the manufacturing method as described above, as Figures 3 to 5 As shown in , not only the device characteristics are obtained and the efficiency is improved, but also no stains occur.

[0069] Now, refer to Figure 6 , examples of quantum dot light emitting devices in display panels according to one or more embodiments of the present disclosure will be described in more detail.

[0070] Figure 6 is a schematic cross-sectional view of a quantum dot light emitting device 100 in a display panel according to one or more embodiments of the present disclosure.

[0071] refer to Figure 6 The quantum dot light-emitting device 100 may include a first electrode 110 and a second electrode 150 facing each other, a light-emitting layer 130 arranged between the first electrode 110 and the second electrode 150 and including quantum dots, a hole auxiliary layer 120 arranged between the first electrode 110 and the light-emitting layer 130, and an electron auxiliary layer 140 arranged between the second electrode 150 and the light-emitting layer 130.

[0072] The substrate may be placed outside the first electrode 110 or the second electrode 150 .

[0073] As an example, the substrate may be placed outside the first electrode 110 .

[0074] The substrate may be a substrate including an insulating material (eg, an insulating transparent substrate).

[0075] The substrate may include one or more of the following (e.g., one or more selected from the following): glass; one or more suitable polymers (such as polyesters (e.g., polyethylene terephthalate (PET) and / or polyethylene naphthalate (PEN)), polycarbonates, polyacrylates, polysiloxanes (e.g., polydimethylsiloxane (PDMS)), polyimides and / or polyamide-imides, etc.); and inorganic materials (e.g., Al 2 O 3 and / or ZnO, etc.). However, the present disclosure is not limited thereto.

[0076] The substrate may include a silicon wafer or the like.

[0077] The thickness of the substrate may be suitably or appropriately selected in consideration of the substrate material, etc., and is not particularly limited in the present disclosure.

[0078] The insulating transparent substrate may be flexible.

[0079] In one or more embodiments, no substrate may be provided.

[0080] One of the first electrode 110 and the second electrode 150 may be an anode, and the other may be a cathode. For example, the first electrode 110 may be an anode and the second electrode 150 may be a cathode.

[0081] The first electrode 110 may include a conductor, such as a metal, a transparent conductive metal oxide, and / or any suitable combination thereof.

[0082] The first electrode 110 may include: a metal (such as nickel, platinum, vanadium, chromium, copper, zinc or gold) or an alloy thereof; a transparent conductive metal oxide (such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO) or fluorine-doped tin oxide); and / or any suitable combination of metals and metal oxides (such as Al and ZnO or Sb and SnO 2 ), but the present disclosure is not limited thereto.

[0083] As an example, the first electrode 110 may include a transparent conductive metal oxide such as indium tin oxide (ITO).

[0084] The second electrode 150 may include a conductor, for example, a metal, a conductive metal oxide, and / or a conductive polymer.

[0085] The second electrode 150 may include: a metal (such as Al, Mg, Ca, Na, Ka, Ti, In, Y, Li, Gd, Ag, Sn, Pb, Cs and / or Ba, etc.) or an alloy thereof; and / or a multilayer material (such as LiF / Al, Li 2 O / Al, Liq / Al, LiF / Ca and / or BaF 2 / Ca), but the present disclosure is not limited thereto.

[0086] Examples of the transparent conductive metal oxide may include the examples listed above with reference to the first electrode.

[0087] At least one of the first electrode 110 and the second electrode 150 may be a transmissive electrode, and the transmissive electrode may include a transparent conductive metal oxide, such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), or indium zinc oxide (IZO), and may include a single metal film or a multi-layer metal film.

[0088] When the first electrode 110 or the second electrode 150 is a non-transmissive electrode, it may include an opaque conductor such as Al, Ag, or Au.

[0089] The thickness of the first electrode 110 and / or the second electrode 150 may not be particularly limited, and may be suitably or appropriately selected in consideration of device efficiency.

[0090] For example, the thickness of the first electrode 110 or the second electrode 150 may be about 5 nanometers (nm) or more, for example, about 50 nm or more.

[0091] For example, the thickness of the first electrode 110 or the second electrode 150 may be about 100 micrometers (μm) or less, such as about 10 μm or less, about 1 μm or less, about 900 nm or less, about 500 nm or less, or about 100 nm or less.

[0092] The light emitting layer 130 may include a plurality of quantum dots. The quantum dots (hereinafter also referred to as "semiconductor nanocrystals") may include Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements or compounds, Group I-III-VI compounds, Group I-II-IV-VI compounds of the periodic table, and / or any suitable combination thereof.

[0093] The II-VI Group compound may be (e.g., may be selected from) the group comprising: a binary compound, (e.g., selected from) the group comprising (e.g., consisting of): CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and / or any suitable mixture thereof; a ternary compound, (e.g., selected from) the group comprising (e.g., consisting of): CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe , CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and / or any suitable mixture thereof; and / or a quaternary compound, (e.g., selected from) the group comprising (e.g., consisting of) CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and / or any suitable mixture thereof. The II-VI Group compound may further include a Group III metal.

[0094] The III-V compound may be (e.g., may be selected from) the group including: a binary compound, (e.g., selected from) the group including (e.g., consisting of): GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and / or any suitable mixture thereof; a ternary compound, (e.g., selected from) the group including (e.g., consisting of): GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb , InNP, InNAs, InNSb, InPAs, InPSb and / or any suitable mixture thereof; and / or a quaternary compound, (e.g., selected from) the group comprising (e.g., consisting of) GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP and / or any suitable mixture thereof. The III-V group compound may further include a Group II metal (e.g., InZnP).

[0095] The Group IV-VI compound may be (e.g., may be selected from) a group including: a binary compound, (e.g., selected from) a group including (e.g., consisting of) SnS, SnSe, SnTe, PbS, PbSe, PbTe and / or any suitable mixture thereof; a ternary compound, (e.g., selected from) a group including (e.g., consisting of) SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and / or any suitable mixture thereof; and / or a quaternary compound, (e.g., selected from) a group including (e.g., consisting of) SnPbSSe, SnPbSeTe, SnPbSTe and / or any suitable mixture thereof.

[0096] Examples of Group I-III-VI compounds may include, but are not limited to, CuInSe 2 、CuInS 2 , CuInGaSe and CuInGaS.

[0097] Examples of Group I-II-IV-VI compounds include, but are not limited to, CuZnSnSe and CuZnSnS.

[0098] The Group IV element or compound may be (e.g., may be selected from) the group comprising: a single element, (e.g., selected from) the group comprising (e.g., consisting of): Si, Ge and / or any suitable mixture thereof; and / or a binary compound, (e.g., selected from) the group comprising (e.g., consisting of): SiC, SiGe and / or any suitable mixture thereof.

[0099] According to one or more embodiments of the present disclosure, quantum dots may not include (eg, may exclude) cadmium.

[0100] Quantum dots may include semiconductor nanocrystals based on Group III-V compounds including indium and phosphorus.

[0101] The Group III-V compound may further include the Group II metal zinc.

[0102] The quantum dots may include semiconductor nanocrystals based on Group II-VI compounds including chalcogen elements (eg, S, Se, Te, and / or any suitable combination thereof) and zinc.

[0103] In quantum dots, the above-mentioned binary compound, ternary compound and / or quaternary compound may be distributed in a semiconductor nanocrystal at a substantially uniform concentration, or may be grouped into parts having different concentrations in different regions of the semiconductor nanocrystal.

[0104] Semiconductor nanocrystals may have a core / shell structure, where a first semiconductor nanocrystal (core) may be surrounded by a second semiconductor nanocrystal (shell) having the same or different composition as the first semiconductor nanocrystal.

[0105] As an example, a quantum dot may include a core comprising InP, InZnP, ZnSe, ZnSeTe, and / or any suitable combination thereof, and a shell (or multiple layers of shells) having a composition different from the core and comprising InP, InZnP, ZnSe, ZnS, ZnSeTe, ZnSeS, and / or any suitable combination thereof.

[0106] The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center (eg, the center of the core).

[0107] In addition, the semiconductor nanocrystal may have a structure including a single semiconductor nanocrystal core and a multilayer shell around the core (e.g., surrounding the core). In this embodiment, the multilayer shell may include two or more layers, and each layer may have a single composition, an alloy, or a gradient concentration composition.

[0108] In quantum dots, the shell material and the core material may have different energy band gaps. For example, the energy band gap of the shell material may be greater than the energy band gap of the core material. In one or more embodiments, the energy band gap of the shell material may be less than the energy band gap of the core material.

[0109] The quantum dot may have a multi-layer shell. In the multi-layer shell, the energy band gap of the outer layer may be larger than the energy band gap of the inner layer (ie, the layer closer to the core). In the multi-layer shell, the energy band gap of the outer layer may be smaller than the energy band gap of the inner layer.

[0110] The absorption / emission wavelength of the quantum dots can be adjusted by changing the composition and size of the quantum dots. The maximum emission peak wavelength of the quantum dots can be in the range of ultraviolet wavelengths to infrared wavelengths or longer wavelengths. For example, the maximum emission peak wavelength of the quantum dots can be equal to or greater than about 300nm, such as about 500nm or greater, about 510nm or greater, about 520nm or greater, about 530nm or greater, about 540nm or greater, about 550nm or greater, about 560nm or greater, about 570nm or greater, about 580nm or greater, about 590nm or greater, about 600nm or greater, or about 610nm or greater.

[0111] The maximum emission peak wavelength of the quantum dot may be in the range of about 800 nm or less, such as about 650 nm or less, about 640 nm or less, about 630 nm or less, about 620 nm or less, about 610 nm or less, about 600 nm or less, about 590 nm or less, about 580 nm or less, about 570 nm or less, about 560 nm or less, about 550 nm or less, or about 540 nm or less. The maximum emission peak wavelength of the quantum dot may be in the range of about 500 nm to about 650 nm. The maximum emission peak wavelength of the quantum dot may be in the range of about 500 nm to about 540 nm. The maximum emission peak wavelength of the quantum dot may be in the range of about 610 nm to about 640 nm.

[0112] The quantum dots can have a quantum efficiency equal to or greater than about 10%, such as about 30% or greater, about 50% or greater, about 60% or greater, about 70% or greater, about 90% or greater, or even about 100%.

[0113] The quantum dots can have a relatively narrow spectrum. The quantum dots can have, for example, a full width at half maximum of an emission wavelength spectrum equal to or less than about 50 nm, such as about 45 nm or less, about 40 nm or less, or about 30 nm or less.

[0114] The quantum dots may have a particle size (e.g., average diameter) equal to or greater than about 1 nm and equal to or less than about 100 nm. The quantum dots may have a particle size of about 1 nm to about 50 nm (e.g., at least about 2 nm, at least about 3 nm, at least about 4 nm, or at least about 10 nm, and at most about 50 nm, at most about 40 nm, at most about 30 nm, at most about 20 nm, or at most about 15 nm).

[0115] The shape of the quantum dot is not particularly limited. For example, example shapes of the quantum dot may include, but are not limited to, spheres, polyhedrons, pyramids, multipods, squares, cuboids, nanotubes, nanorods, nanowires, nanosheets, or any suitable combination thereof.

[0116] Quantum dots may be commercially available or suitably or appropriately synthesized.

[0117] The particle size of quantum dots can be adjusted relatively freely during colloidal synthesis, and the particle size can be substantially uniform.

[0118] The quantum dots may include, for example, organic ligands having a hydrophobic portion. The organic ligand portion may be bound to the surface of the quantum dots. The organic ligands may include RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, R 3 PO, R 3P, ROH, RCOOR, RPO(OH) 2 , RHPOOH, R 2 POOH and / or any suitable combination thereof, wherein each R may independently be a substituted or unsubstituted C3 (or C5) to C24 aliphatic hydrocarbon group (such as C3 (or C5) to C24 alkyl group and / or C3 (or C5) to C24 alkenyl group, etc.), a substituted or unsubstituted C6 to C20 aromatic hydrocarbon group (such as C6 to C20 aryl group, etc.), and / or any suitable combination thereof.

[0119] Examples of organic ligands may include: thiol compounds, such as methanethiol, ethanethiol, propanethiol, butanethiol, pentanethiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol and / or benzylthiol, etc.; amines, such as methaneamine, ethaneamine, propanethiol, butanethiol, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine and / or trioctylamine, etc.; carboxylic acid compounds, such as formic acid, acetic acid, propionic acid, butyric acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid and / or benzylthiol, etc. Acid, etc.; phosphine compounds, such as methyl phosphine, ethyl phosphine, propyl phosphine, butyl phosphine, pentyl phosphine, octyl phosphine, dioctyl phosphine, tributyl phosphine and / or trioctyl phosphine, etc.; oxides of phosphine compounds, such as methyl phosphine oxide, ethyl phosphine oxide, propyl phosphine oxide, butyl phosphine oxide, pentyl phosphine oxide, tributyl phosphine oxide, octyl phosphine oxide, dioctyl phosphine oxide, trioctyl phosphine oxide, diphenyl phosphine oxide and / or triphenyl phosphine oxide, etc.; C5 to C20 alkyl phosphinic acids, such as hexyl phosphinic acid, octyl phosphinic acid, dodecane phosphinic acid, tetradecane phosphinic acid, hexadecane phosphinic acid and / or octadecane phosphinic acid; and / or C5 to C20 alkyl phosphinic acids, etc., but the present disclosure is not limited thereto.

[0120] The quantum dots may include only organic ligands having a hydrophobic portion or any suitable mixture thereof.The organic ligands having a hydrophobic portion may not include (eg, may exclude) photopolymerizable residues, such as acrylate groups or methacrylate groups.

[0121] As an example, the light emitting layer 130 may include a single layer of quantum dots. In one or more embodiments, the light emitting layer 130 may include one or more single layers of quantum dots, for example, at least two, three, or four single layers of quantum dots and at most twenty, ten, nine, eight, seven, or six single layers of quantum dots.

[0122] The light emitting layer 130 has a thickness of about 5 nm or more (e.g., about 10 nm or more, about 20 nm or more, or about 30 nm or more) and about 200 nm or less (e.g., about 150 nm or less, about 100 nm or less, about 90 nm or less, about 80 nm or less, about 70 nm or less, about 60 nm or less, or about 50 nm or less). The light emitting layer 130 may have a thickness of, for example, about 10 nm to about 150 nm (e.g., about 10 nm to about 100 nm, or about 10 nm to about 50 nm).

[0123] The light emitting layer 130 may have a highest occupied molecular orbital (HOMO) energy level of about 5.4 eV or more, about 5.6 eV or more, about 5.7 eV or more, about 5.8 eV or more, about 5.9 eV or more, or about 6.0 eV or more. The HOMO energy level of the light emitting layer 130 may be about 7.0 eV or less, about 6.8 eV or less, about 6.7 eV or less, about 6.5 eV or less, about 6.3 eV or less, or about 6.2 eV or less. As an example, the light emitting layer 130 may have a HOMO energy level of about 5.6 eV to about 6.0 eV.

[0124] The light emitting layer 130 may have a lowest unoccupied molecular orbital (LUMO) energy level equal to or less than about 3.8 eV (e.g., about 3.7 eV or less, about 3.6 eV or less, about 3.5 eV or less, about 3.4 eV or less, about 3.3 eV or less, about 3.2 eV or less, or about 3.0 eV or less). The LUMO energy level of the light emitting layer 130 may be equal to or higher than about 2.5 eV. As an example, the light emitting layer 130 may have an energy band gap of about 2.5 eV to about 2.9 eV.

[0125] For example, Figure 6 As shown in FIG. 1 , the hole auxiliary layer 120 may be disposed between the first electrode 110 and the light emitting layer 130. The hole auxiliary layer 120 may have one layer or two or more layers and may include, for example, a hole injection layer, a hole transport layer and / or an electron blocking layer.

[0126] The HOMO energy level of the hole assisting layer 120 may have a HOMO energy level that may match the HOMO energy level of the light emitting layer 130, and may enhance the mobility of holes transferred from the hole assisting layer 120 to the light emitting layer 130. The HOMO energy level of the hole assisting layer 120 (e.g., a hole transport layer) adjacent to the light emitting layer 130 may be equal to the HOMO energy level of the light emitting layer 130 or less than the HOMO energy level of the light emitting layer 130 by at most about 1.0 eV. For example, the difference in HOMO energy level between the hole assisting layer 120 and the light emitting layer 130 may be about 0 eV to about 1.0 eV, about 0.01 eV to about 0.8 eV (e.g., about 0.01 eV to about 0.7 eV, about 0.01 eV to about 0.5 eV, about 0.01 eV to about 0.4 eV, about 0.01 eV to about 0.3 eV, about 0.01 eV to about 0.2 eV, or about 0.01 eV to about 0.1 eV).

[0127] The HOMO energy level of the hole assisting layer 120 may be equal to or higher than about 5.0 eV, for example, about 5.2 eV or more, about 5.4 eV or more, about 5.6 eV or more, or about 5.8 eV or more. The HOMO energy level of the hole assisting layer 120 may be in the range of about 5.0 eV to about 7.0 eV, for example, about 5.2 eV to about 6.8 eV, about 5.4 eV to about 6.8 eV, about 5.4 eV to about 6.7 eV, about 5.4 eV to about 6.5 eV, about 5.4 eV to about 6.3 eV, about 5.4 eV to about 6.2 eV, about 5.4 eV to about 6.1 eV, about 5.6 eV to about 7.0 eV, about 5.6 eV to about 7.8 eV, about 5.8 eV to about 7.9 eV. 6eV to about 6.7eV, about 5.6eV to about 6.5eV, about 5.6eV to about 6.3eV, about 5.6eV to about 6.2eV, about 5.6eV to about 6.1eV, about 5.8eV to about 7.0eV, about 5.8eV to about 6.8eV, about 5.8eV to about 6.7eV, about 5.8eV to about 6.5eV, about 5.8eV to about 6.3eV, about 5.8eV to about 6.2eV, or about 5.8eV to about 6.1eV.

[0128] As an example, the hole auxiliary layer 120 may include a hole injection layer close to the first electrode 110 and a hole transport layer close to the light emitting layer 130. In one or more embodiments, the HOMO energy level of the hole injection layer may be in the range of about 5.0 eV to about 6.0 eV, about 5.0 eV to about 5.5 eV, or about 5.0 eV to about 5.4 eV, and the HOMO energy level of the hole transport layer may be in the range of about 5.2 eV to about 7.0 eV, about 5.4 eV to about 6.8 eV, about 5.4 eV to about 6.7 eV, about 5.4 eV to about 6.5 eV, about 5.4 eV to about 6.3 eV, about 5.4 eV to about 6.2 eV, or about 5.4 eV to about 6.1 eV.

[0129] The material included in the hole auxiliary layer 120 is not particularly limited, and may include at least one of a carbon-based material and any appropriate combination thereof (e.g., at least one selected from a carbon-based material and any appropriate combination thereof). The carbon-based material may include, for example, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4″-(N-(4-sec-butylphenyl))diphenylamine)] (TFB), polyarylamine, poly(N-vinylcarbazole), poly(3,4-ethylenedioxyamine), poly(3,4-ethylenedioxythiophene) (PEDOT), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline, polypyrrole, N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine (T PD), 2,2'-dimethyl-N4,N4'-di(naphthalene-1-yl)-N4,N4'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (α-NPD), 4,4',4"-tri[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA), 4,4',4"-tri(carbazol-9-yl)triphenylamine (TCTA), 4,4'-cyclohexylenebis[N,N-bis(4-tolyl)aniline] (TAPC), p-type or p-like metal oxides (e.g. NiO, WO 3 and / or MoO 3 etc.) and graphene oxide. However, the present disclosure is not limited thereto.

[0130] In the hole assisting layer 120 , the thickness of each layer may be suitably or appropriately selected.

[0131] For example, the thickness of each layer may be equal to or greater than about 10 nm (e.g., about 15 nm or greater, or about 20 nm or greater) and equal to or less than about 100 nm (e.g., about 90 nm or less, about 80 nm or less, about 70 nm or less, about 60 nm or less, or about 50 nm or less), but the present disclosure is not limited thereto.

[0132] The electron assist layer 140 may be disposed between the light emitting layer 130 and the second electrode 150. The electron assist layer 140 may include, for example, an electron injection layer, an electron transport layer and / or a hole blocking layer, but the present disclosure is not limited thereto. As an example, the electron assist layer 140 may be an electron transport layer.

[0133] The electron auxiliary layer 140 may include metal oxide nanoparticles surface-modified with an organic acid. The metal oxide may be an oxide of a metal including Zn, Mg, Ca, Zr, W, Li, Ti, Y, Al, and / or any suitable combination thereof. As an example, the metal oxide may be represented by the following formula 1.

[0134] Formula 1

[0135] Zn 1-x M x O

[0136] In Formula 1, M may be Mg, Ca, Zr, W, Li, Ti, Y, Al, and / or any appropriate combination thereof, and, for example, may be Mg.

[0137] In Formula 1, x may be equal to or greater than about 0 and equal to or less than about 0.5, such as equal to or greater than about 0.01 and equal to or less than about 0.3, or equal to or greater than about 0.01 and equal to or less than about 0.15.

[0138] As an example, the metal oxide may include at least one of zinc oxide and zinc magnesium oxide.

[0139] The average particle size or average diameter of the metal oxide nanoparticles may be equal to or greater than about 1 nm (e.g., at least about 1.5 nm, at least about 2 nm, at least about 2.5 nm, or at least about 3 nm) and equal to or less than about 100 nm (e.g., at most about 90 nm, at most about 80 nm, at most about 70 nm, at most about 60 nm, at most about 50 nm, at most about 40 nm, at most about 30 nm, at most about 20 nm, at most about 10 nm, at most about 9 nm, at most about 8 nm, at most about 7 nm, at most about 6 nm, or at most about 5 nm).

[0140] The metal oxide nanoparticles may be neither rod-shaped nor nanowire-shaped.

[0141] The absolute value of the LUMO energy level of the quantum dot may be less than the absolute value of the LUMO energy level of the metal oxide (nanoparticle). In another embodiment, the absolute value of the LUMO energy level of the quantum dot may be greater than the absolute value of the LUMO energy level of the metal oxide. The absolute value of the LUMO energy level of the metal oxide may be at least about 2 eV, at least about 2.5 eV, at least about 3 eV, at least about 3.5 eV, or at least about 4 eV, and at most about 5 eV, at most about 4.5 eV, at most about 4 eV, at most about 3.5 eV, or at most about 3 eV.

[0142] The absolute value of the HOMO energy level of the metal oxide may be at least about 5 eV, at least about 5.5 eV, at least about 6 eV, at least about 6.5 eV, or at least about 7 eV, and at most about 8 eV, at most about 7.5 eV, at most about 7 eV, at most about 6.5 eV, or at most about 6 eV.

[0143] The metal oxide may have an energy band gap of at least about 2 eV, at least about 2.5 eV, at least about 3 eV, at least about 3.5 eV, or at least about 4 eV, and at most about 5 eV, at most about 4.5 eV, at most about 4 eV, at most about 3.5 eV, or at most about 3 eV.

[0144] In the quantum dot light-emitting device 100, holes and electrons injected from the first electrode 110 and the second electrode 150, respectively, may meet and recombine with each other in the light-emitting layer 130 including quantum dots to form excitons to emit light after passing through a common layer (e.g., an electron auxiliary layer 140 (such as an electron injection layer and / or an electron transport layer, etc.) and a hole auxiliary layer 120 (such as a hole injection layer and / or a hole transport layer, etc.)).

[0145] A common layer may be provided between the light-emitting layer 130 and the first electrode 110 or the second electrode 150 for smoothly injecting holes or electrons by applying a voltage, and, for example, the electron auxiliary layer 140 (such as an electron transport layer) has sufficient electron mobility to effectively transfer electrons from the second electrode 150 to the light-emitting layer 130, thereby obtaining a hole-electron balance in the light-emitting layer 130.

[0146] In one or more embodiments, the electron assisting layer 140 has a suitable or appropriately deep HOMO energy level to sufficiently block or reduce holes from the light emitting layer 130 .

[0147] As an example, the electron transport layer may include metal oxide nanoparticles. Although metal oxide nanoparticles have excellent electron mobility than organic semiconductor materials widely used as electron transport layers of OLEDs, they may have relatively high leakage current values ​​due to easier hole transfer through defects in the nanoparticles, which may lead to a reduction in the efficiency of the quantum dot light-emitting device 100.

[0148] In addition, organic substances derived from one or more appropriate organic-inorganic precursors used in the synthesis of metal oxide nanoparticles may act as insulators on the surface of the metal oxide nanoparticles or between the metal oxide nanoparticles to reduce electron mobility, and may cause charging due to charge accumulation at the interface between the light-emitting layer 130 and the electron transport layer, thereby resulting in a reduction in the brightness and lifetime of the quantum dot light-emitting device 100.

[0149] In the quantum dot light emitting device 100 according to one or more embodiments, the electron auxiliary layer 140 (eg, electron transport layer) may include metal oxide nanoparticles surface-modified with an organic acid.

[0150] Accordingly, leakage current of the electron assist layer 140 may be reduced, and charge accumulation may be eliminated.

[0151] The organic acid chemically bonds to metal ions, a combination of metal ions and oxygen or hydroxyl groups, or a combination thereof on the surface of the metal oxide nanoparticles to passivate defects on the surface and desorb remaining organic matter on the surface, thereby providing higher conductivity and fewer defects.

[0152] Accordingly, the electron assisting layer 140 may improve the efficiency and lifetime of the quantum dot light emitting device 100 .

[0153] The organic acid may be an acidic organic substance having a functional group that can be bonded to the surface of the metal oxide nanoparticles, and may include, for example, RCOOH, RSO 2 H. RSO 3 H, ArOH, ArSH, RCH=NOH, RCH=C(OH)R', RCONHCOR', ArSO 2 NH 2 、ArSO 2 NHR, RCH 2 NO 2 , R 2 CHNO 2 Here, R and R' may be the same or different, and each of R and R' may independently be hydrogen, substituted or unsubstituted C1 (or C3) to C24 (or C40) aliphatic hydrocarbon group, i.e., C1 (or C3) to C24 (or C40) alkyl group, C2 (or C3) to C24 (or C40) alkenyl group, C2 (or C3) to C24 (or C40) alkynyl group), C3 to C40 alicyclic hydrocarbon group and / or any appropriate combination thereof. R 2 CHNO 2 At least one R in may not be hydrogen, and Ar may include a substituted or unsubstituted C6 to C20 aromatic hydrocarbon group (ie, a C6 to C20 aromatic group).

[0154] The organic acid has a molecular weight equal to or greater than about 30 g / mol (e.g., at least about 40 g / mol, at least about 50 g / mol, at least about 60 g / mol, at least about 70 g / mol, at least about 80 g / mol, at least about 90 g / mol, or at least about 100 g / mol) and can be equal to or less than about 600 g / mol (e.g., at most about 500 g / mol, at most about 400 g / mol, or at most about 300 g / mol). The molecular weight of the organic acid can be in the range of about 30 g / mol to about 600 g / mol (e.g., from about 50 g / mol to about 500 g / mol, from about 80 g / mol to about 400 g / mol, or from about 100 g / mol to about 300 g / mol).

[0155] The organic acid may have a pKa of about 1 or greater (e.g., at least about 1.5, at least about 2, or at least about 2.5) and about 5 or less (e.g., at most about 4.5, at most about 4, or at most about 3.5). The pKa of the organic acid may be in the range of about 1 to about 5 (e.g., about 1.5 to about 4.5, about 2 to about 4, or about 2.5 to about 3.5).

[0156] Examples of organic acids having a desired or appropriate molecular weight and pKa range may include citric acid, acetic acid, oxalic acid, sulfonic acid, and / or any appropriate combination thereof.

[0157] In particular, a sulfonic acid having a molecular weight of about 600 g / mol or less may be used.

[0158] As used herein, when no definition is otherwise provided, "substituted" refers to a compound or a corresponding moiety where a hydrogen is replaced by a substituent, wherein the substituent is a C1-C30 alkyl, C2-C30 alkenyl, C2-C30 alkynyl, C6-C30 aryl, C7-C30 alkaryl, C1-C30 alkoxy, C1-C30 heteroalkyl, C3-C30 heteroalkaryl, C3-C30 cycloalkyl, C3-C30 (or C15) cycloalkenyl, C6-C30 cycloalkynyl, C2-C30 heterocycloalkyl, halogen (-F, -Cl, -Br or -I), hydroxyl (-OH), nitro (-NO 2 ), cyano (-CN), amino (-NRR', wherein R and R' are independently hydrogen or C1-C6 alkyl), azido (-N 3 ), amidino (-C(═NH)NH 2 )), hydrazino (-NHNH 2 ), hydrazone (═N(NH 2 )), aldehyde group (-C(═O)H), carbamoyl group (-C(O)NH 2 ), thiol group (-SH), ester group (-C(═O)OR, wherein R is C1-C6 alkyl or C6-C12 aryl), carboxyl group (-COOH) or its salt (-C(═O)OM, wherein M is an organic or inorganic cation), sulfonic acid group (-SO 3 H) or its salt (-SO 3 M, where M is an organic or inorganic cation), a phosphate group (-PO 3 H 2 ) or its salt (-PO 3 MH or -PO 3 M 2 , wherein M is an organic or inorganic cation), or a combination thereof.

[0159] As used herein, the "monocyclic aromatic ring group" refers to a carbocyclic group (eg, C6-C12 aryl or C6-C8 aryl) or a heterocyclic group (eg, C2-C12 heteroaryl or C2-C4 heteroaryl) providing a conjugated structure.

[0160] As used herein, "fused polycyclic aromatic ring group" refers to a cyclic group formed by fusing at least two monocyclic aromatic ring groups, such as a C8-C20 aryl group, such as a C8-C15 aryl group, or a C4-C20 heteroaryl group, such as a C4-C15 heteroaryl group.

[0161] As used herein, "hetero" refers to a compound or group including atoms other than carbon or hydrogen, for example, a compound or group including 1 to 3 heteroatoms of N, O, S, Si, P or a combination thereof.

[0162] Unless otherwise defined, all terms (including technical and scientific terms) used in this article have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will be further understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and / or this specification, and should not be interpreted in an idealized or overly formal sense, unless explicitly defined as such in this article.

[0163] As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values ​​that one of ordinary skill in the art will recognize. "Substantially," as used herein, includes the recited value, and means within the range of acceptable deviations of the particular value as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "substantially" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the recited value.

[0164] Furthermore, any numerical range set forth herein is intended to include all sub-ranges of the same numerical precision falling within the range set forth. For example, the range of "1.0 to 10.0" is intended to include between the minimum value 1.0 set forth and the maximum value 10.0 set forth (and including 1.0 and 10.0), that is, all sub-ranges with a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit set forth herein is intended to include all lower numerical limits falling therein, and any minimum numerical limit set forth in this specification is intended to include all higher numerical limits falling therein. Accordingly, the applicant reserves the right to modify this specification (including claims) to explicitly set forth any sub-range falling within the range explicitly set forth herein.

[0165] Further, when describing embodiments of the present disclosure, the use of “may” refers to “one or more embodiments of the present disclosure.”

[0166] Any suitable hardware, firmware (e.g., a dedicated integrated circuit), software, or a combination of software, firmware, and hardware may be used to implement a display device, an electronic device, or any other related device or component according to the embodiments of the present disclosure described herein. For example, the various components of the device may be formed on an integrated circuit (IC) chip or on a separate IC chip. In addition, the various components of the device may be implemented on a flexible printed circuit film, a tape carrier package (TCP), or a printed circuit board (PCB), or formed on a substrate. In addition, the various components of the device may be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components to perform the various functions described herein. The computer program instructions are stored in a memory, which may be implemented in a computing device using a standard memory device, such as, for example, a random access memory (RAM). The computer program instructions may also be stored in other non-temporary computer-readable media, such as, for example, a CD-ROM or a flash drive, etc. Moreover, it should be appreciated by those skilled in the art that, without departing from the scope of the embodiments of the present disclosure, the functions of various computing devices may be combined or integrated into a single computing device, or the functions of a dedicated computing device may be distributed on one or more other computing devices.

[0167] Although the embodiments of the present disclosure have been described, it should be understood that the present disclosure should not be limited to these embodiments, but one or more appropriate changes and modifications may be made by one of ordinary skill in the art within the spirit and scope as defined by the claims and their equivalents.

Claims

1. A method for manufacturing a display device, the method comprising: Manufacturing a display panel comprising a plurality of quantum dot light emitting devices; exposing the display panel to resin fumes; as well as A protective film is bonded on the display panel.

2. The method of claim 1, wherein the resin fume comprises at least one of acrylic acid, acetic acid, methacrylic acid, and isobornyl methacrylate.

3. The method of claim 2, wherein the resin fume comprises at least one of acrylic acid and methacrylic acid. The method according to claim 1 , wherein the protective film comprises transparent glass. 5 . The method of claim 1 , wherein the bonding of the protective film comprises disposing a sealant adjacent to at least one of an edge of the display panel and an edge of the protective film.

6. A display device, comprising: A display panel comprising a plurality of quantum dot light emitting devices, the display panel comprising a resin adsorbed on the quantum dot light emitting devices through resin smoke; a protective film on the display panel; as well as A sealant is between the display panel and the protective film and adjacent to edges of the display panel and the protective film. 7 . The display device according to claim 6 , wherein the resin fume comprises at least one of acrylic acid, acetic acid, methacrylic acid, and isobornyl methacrylate. 8 . The display device according to claim 7 , wherein the resin fume comprises at least one of acrylic acid and methacrylic acid. 9 . The display device according to claim 6 , wherein the protective film comprises transparent glass. 10 . The display device according to claim 6 , wherein each of the plurality of quantum dot light emitting devices comprises an electron assisting layer surface-modified with the resin.

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