High-pressure substrate processing apparatus and process gas line for same

Abstract

The present invention relates to a high-pressure substrate processing apparatus and a processing gas line for the same, the high-pressure substrate processing apparatus comprising: an inner chamber provided with: an inner case formed to accommodate a substrate to be processed; and an inner door movably formed between a closed position closing the inner case and an open position opening the inner case; an outer chamber provided with: a housing arranged to accommodate the inner chamber; and an outer door movably formed to open and close the housing; and a gas supply module provided with: a process gas line for supplying a process gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure; and a shielding gas line for supplying a shielding gas to a shielding space between the outer chamber and the inner chamber at a second pressure set with respect to the first pressure, the process gas line including: an introduction part having a discharge port provided in the shielding space; and a conveying part which is provided with a connection port that is connected to the discharge port in the closed position and moves in the open position so as to be spaced apart from the discharge port, and which conveys the process gas input from the introduction part into the inner case.

Description

Technical Field

[0001] The invention relates to a high-pressure substrate processing device and a processing gas pipeline used for the device. Background Art

[0002] Generally, in the manufacturing process of semiconductor elements, various processing is performed on the semiconductor chip. The processing includes oxidation, nitridation, vapor deposition, silicide and ion implantation. There is also a hydrogen or deuterium heat treatment process for improving the interface performance of the semiconductor element.

[0003] The gas used for processing is supplied into the chamber under high pressure and acts on the semiconductor substrate. For gas supply, a hose connected to the factory gas supply facility extends into the chamber. As the chamber door is raised or lowered, a part of the hose must also be raised or lowered. To achieve this, the hose is made of a material with good flexibility.

[0004] As the hose is bent repeatedly, the structure of the hose may weaken, and gas leakage may occur at the weak portion of the hose.

[0005] The above-mentioned background technology refers to the technology that the inventor possesses in order to derive the embodiments of the present invention, or the technical information obtained in the derivation process, and therefore, it is not necessarily the known technology that has been disclosed to the public before the present application. Summary of the invention

[0006] Technical issues

[0007] An object of the present invention is to provide a high-pressure substrate processing apparatus and a processing gas pipeline for the apparatus that can structurally eliminate the risk of gas leakage caused by bending of a pipeline for supplying a processing gas into a chamber.

[0008] Technical Solution

[0009] To achieve the above-mentioned purpose, a high-pressure substrate processing device according to one aspect of the present invention may include: an inner chamber, comprising: an inner shell, formed to accommodate a substrate to be processed; and an inner door, formed to be movable between a closed position for closing the inner shell and an open position for opening the inner shell; an outer chamber, comprising: an outer shell, arranged to accommodate the inner chamber; an outer door, movably formed to open and close the outer shell; and a gas supply module, comprising: a processing gas pipeline, supplying a processing gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure; a protective gas pipeline, supplying a protective gas to a protective space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure, the processing gas pipeline comprising: an introduction portion, having an exhaust port arranged in the protective space; and a conveying portion, comprising a connecting port, the connecting port being connected to the exhaust port in the closed position and being movable to be spaced apart from the exhaust port in the open position, the conveying portion conveying the processing gas input from the introduction portion into the inner shell.

[0010] Here, the introduction portion may be installed to penetrate the housing.

[0011] Here, the introduction portion may be fixedly mounted on the housing.

[0012] Here, the housing may include a support portion, and as the inner door moves from the open position to the closed position, the support portion applies a force relative to the connection port to support the discharge port.

[0013] Here, the conveying portion may be installed on the inner door and move together when the inner door moves between the closed position and the open position.

[0014] Here, the conveying part may include: a fixed part installed on the inner door; and a movable part provided at a position corresponding to the discharge port and installed to be movable relative to the fixed part.

[0015] Here, the moving portion may be formed to move along a direction moving between the closed position and the open position.

[0016] Here, the conveying portion may further include a first buffer member installed at any one of the fixed portion and the movable portion to reduce an impact caused by a collision with the other of the fixed portion and the movable portion.

[0017] Here, the inner chamber may further include a second buffer member installed in at least one of the inner door and the inner shell to mitigate impact caused by collision with the other of the inner door and the inner shell, and the first buffer member and the second buffer member have the same material and thickness.

[0018] Here, the second pressure may be higher than the first pressure.

[0019] According to another aspect of the present invention, a processing gas pipeline for a high-voltage substrate processing device, wherein it may be, including: an inlet portion, having an exhaust port arranged in an outer shell of the high-voltage substrate processing device; and a conveying portion, having a connection port, the connection port being connected to the exhaust port when the inner door of the high-voltage substrate processing device is in a closed position of an inner shell enclosed in the outer shell, and being moved to be separated from the exhaust port when the inner door is in an open position of opening the inner shell, the conveying portion conveys the processing gas input from the inlet portion into the inner shell, the conveying portion including: a fixed portion installed on the inner door; and a movable portion arranged at a position corresponding to the exhaust port and installed to be movable relative to the fixed portion.

[0020] Here, the introduction portion may pass through the housing and be fixedly mounted on the housing.

[0021] Here, the conveying portion may further include a first buffer member installed at any one of the fixed portion and the movable portion to reduce an impact caused by a collision with the other of the fixed portion and the movable portion.

[0022] Here, it can be that when the high-voltage substrate processing device further includes a second buffer member installed in at least one of the inner door and the inner shell to reduce the impact caused by collision with the other of the inner door and the inner shell, the first buffer member has the same material and thickness as the second buffer member.

[0023] Effects of the Invention

[0024] According to the high-voltage substrate processing device of the present invention and the processing gas pipeline used for the device, the processing pipeline of the gas supply module for providing the processing gas to the inner chamber is provided with: an introduction part having an exhaust port arranged in the protective space of the outer chamber; and a conveying part having a connection port connected to the exhaust port or spaced from the exhaust port while moving with the movement of the door of the inner chamber, whereby, in a state where the exhaust port and the connection port are connected, since the processing gas input from the introduction part is conveyed to the inner chamber by the conveying part, the processing gas pipeline does not need to have a portion that needs to be bent. As a result, the risk of processing gas leakage due to the bending of the processing gas pipeline can be structurally eliminated. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 FIG. 1 is a conceptual diagram of a high voltage substrate processing apparatus 100 according to an embodiment of the present invention.

[0026] Figure 2 To show Figure 1 A conceptual diagram of a closed position of the high-voltage substrate processing apparatus 100 .

[0027] Figure 3 To show Figure 1 A conceptual diagram of an open position of the high-voltage substrate processing apparatus 100 .

[0028] Figure 4 To show Figure 2 2 is a conceptual diagram of the detailed structure of the process gas pipeline 200 in the closed position.

[0029] Figure 5 To show Figure 3 2 is a conceptual diagram of the detailed structure of the process gas pipeline 200 in the open position.

[0030] Figure 6 1 is a conceptual diagram of a lifting driving module 150 for lifting and lowering the outer door 125 of the outer chamber 120 . DETAILED DESCRIPTION

[0031] Hereinafter, a high voltage substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the drawings. In this specification, even in different embodiments, the same and similar reference numerals are given to the same and similar configurations, and the first description is substituted for the description.

[0032] Figure 1 FIG. 1 is a conceptual diagram of a high voltage substrate processing apparatus 100 according to an embodiment of the present invention.

[0033] Referring to the figure, the high-pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , a gas supply module 130 , and an exhaust module 140 .

[0034] The inner chamber 110 forms a storage space for accommodating a substrate to be processed. The inner chamber 110 can be made of non-metallic materials, such as quartz, to reduce the risk of contamination of the substrate in a high temperature and high pressure working environment. By operating a heater (not shown) disposed outside the inner chamber 110, the temperature of the inner chamber 110 can reach hundreds to thousands of degrees Celsius. The substrate can be, for example, a semiconductor chip mounted on a retainer. The substrate is not limited to a chip, and can be used as long as the basic structure of the circuit can be manufactured. For example, the substrate can also include glass for manufacturing a display. The retainer can be a wafer boat capable of stacking the substrate into multiple layers.

[0035] The outer chamber 120 is arranged to accommodate the inner chamber 110. Unlike the inner chamber 110, the outer chamber 120 may be made of a metal material because it is not subject to contamination problems. The outer chamber 120 is formed in a hollow shape having an inner space so as to accommodate the inner chamber 110.

[0036] The gas supply module 130 is a structure for supplying gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 has a gas supplier 131 as a gas source. The gas supplier 131 can selectively provide processing gas, such as hydrogen / deuterium gas, fluorine gas, ammonia gas, chlorine gas, nitrogen gas, etc., to the inner chamber 110. The gas supplier 131 can provide protective gas, such as nitrogen gas as an inert gas, to the outer chamber 120. These processing gases and protective gases are respectively introduced into the inner chamber 110 or the outer chamber 120 through the processing gas pipeline 133 or the protective gas pipeline 135. The protective gas introduced into the outer chamber 120 is specifically supplied to the space (protective space) between the outer chamber 120 and the inner chamber 110. The processing gas and the protective gas can be referred to as process gas.

[0037] The process gas can be supplied at a pressure higher than atmospheric pressure, for example, to form a high pressure of several atmospheres to tens of atmospheres. When the pressure of the process gas is a first pressure and the pressure of the protective gas is a second pressure, these can be maintained within a set relationship (range). For example, the second pressure can be set to be substantially equal to or slightly greater than the first pressure. This pressure relationship provides the advantage of preventing the reaction gas from leaking from the inner chamber 110 and preventing the inner chamber 110 from rupturing. The second pressure can be set to be slightly lower than the first pressure, and even in this case, a similar effect as before can be achieved.

[0038] The exhaust module 140 is used to exhaust the process gas. In order to exhaust the process gas from the inner chamber 110, an exhaust pipe 141 may be connected to the upper portion of the inner chamber 110. In order to exhaust the protective gas from the outer chamber 120, an exhaust pipe 145 connected to the outer chamber 120 may be similarly provided. Since the exhaust pipe 141 and the exhaust pipe 145 are connected to each other, the process gas is diluted by the protective gas during the exhaust process, and its concentration is reduced.

[0039] Will refer to Figures 2 to 3 The specific structure of the process gas line 133 will be described. Figure 2 To show Figure 1 A conceptual diagram of the closed position of the high-voltage substrate processing apparatus 100, Figure 3 To show Figure 1 1 and 1. Conceptual diagram of the open position of the high-voltage substrate processing apparatus 100. Figure 1 The exhaust module 140 and other local elements.

[0040] Referring to these figures, the inner chamber 110 includes an inner shell 111 and an inner door 115. The inner shell 111 forms a storage space for accommodating the substrate, and its lower portion may have an open shape. The inner door 115 has a shape that closes the open lower portion of the inner shell 111. The inner door 115 may have a groove shape that is open downward as a whole, and a heater (not shown) may be provided in the open space. When the inner door 115 moves, specifically, descends, the storage space is opened (open position, refer to Figure 3 When the inner door 115 moves in the opposite direction, specifically, rises, the accommodation space is closed (closed position, see Figure 2 ). The substrate can be loaded into or unloaded from the accommodation space in the open position.

[0041] The outer chamber 120 includes an outer shell 121 and an outer door 125. The outer shell 121 may be formed to accommodate the entire inner chamber 110. Thus, the outer shell 121 may be formed to surround not only the inner shell 111 but also the inner door 115. The outer door 125 may also open and close the outer shell 121 as it moves. The outer door 125 is connected to the inner door 115 by a supporting member 119 and is capable of supporting the inner door 115. In this case, the inner door 115 opens and closes the inner shell 111 while moving in conjunction with the lifting movement of the outer door 125. The description of the open state and the closed state may also be applied to the relationship between the outer shell 121 and the outer door 125.

[0042] The processing gas pipeline 133 may include an introduction portion 133a, a conveying portion 133b and a heating portion 133c. The introduction portion 133a extends from the outside of the outer shell 121 to the inside of the outer shell 121. The conveying portion 133b may be located inside the outer shell 121. The heating portion 133c may be installed on the inner door 115. The difference between the heating portion 133c and the conveying portion 133b is that the heating portion 133c is a portion for heating the processing gas by the heater installed on the inner door 115. The heating portion 133c may be spirally wound around the inner door 115 to ensure that the processing gas has sufficient heating time. Despite the above differences, since the processing gas input from the introduction portion 133a is transported to the inner shell 111, the heating portion 133c may also be understood as a part of the conveying portion 133b.

[0043] When the inner door 115 (and the outer door 125) moves from the closed position to the open position, the conveying portion 133b and the heating portion 133c move downward together with the inner door 115. The introduction portion 133a is different from the other portions 133b and 133c and is kept fixed.

[0044] In the closed position, the introduction part 133a and the delivery part 133b are connected to each other, and the processing gas flows through the introduction part 133a, the delivery part 133b and the heating part 133c in sequence and is supplied to the interior of the inner shell 111. In the open position, the supply of the processing gas to the inner chamber 110 is stopped, and the delivery part 133b is spaced apart from the introduction part 133a.

[0045] Figure 4 To show Figure 2 A conceptual diagram of the detailed structure of the process gas pipeline 200 in the closed position, Figure 5 To show Figure 3 1 and 2. In these figures, the process gas line 133 is denoted by reference numeral 200 for convenience of description.

[0046] Referring to these figures, contrary to the above description, the process gas pipeline 200 may include an introduction portion 210 and a delivery portion 250 .

[0047] The introduction part 210 may include an introduction pipe 211 and an exhaust port 213. The introduction pipe 211 may be arranged to penetrate the shell 121. The exhaust port 213 may be arranged in the shell 121, specifically in the protective space. Since the exhaust port 213 is located in the protective space, it is affected by the protective gas (pressure). The exhaust port 213 may be a hole of an exhaust nozzle 214 connected to the introduction pipe 211. Alternatively, the exhaust port 213 may be an end hole of the introduction pipe 211 itself. The exhaust port 213 may be arranged to face downward. The support portion 123 is formed on the shell 121 to support the exhaust nozzle 214 downward. The introduction part 210 is fixedly mounted on the shell 121 as a whole, and will not move due to the lifting and lowering of the conveying part 250.

[0048] The conveying portion 250 may include a fixing portion 251 , a moving portion 255 , and a first buffer member 261 .

[0049] The fixed portion 251 may be fixedly mounted on the inner door 115. On the other hand, the movable portion 255 is mounted to move relative to the fixed portion 251, specifically to move up and down. The movable portion 255 is mounted at a position corresponding to the discharge port 213 of the fixed portion 251.

[0050] The moving part 255 may include a moving tube 256 and a connection port 257. The moving tube 256 may have a curved shape. For example, the upper portion of the moving tube 256 may be arranged along the lifting direction, and the lower portion of the moving tube 256 may be arranged along a direction intersecting the lifting direction. The connection port 257 may be an end hole of a connection nozzle 258 coupled to the upper portion of the moving tube 256. Alternatively, the connection port 257 may also be an end hole of the upper portion of the moving tube 256 itself.

[0051] The first buffer member 261 is a structure for reducing the impact when the moving part 255 descends relative to the fixed part 251 and collides with the fixed part 251. The first buffer member 261 may be located below the fixed part 251. The first buffer member 261 is installed to contact when the moving part 255 descends. The first buffer member 261 may be a member made of rubber, silicone, etc. Different from the above, the first buffer member 261 may also be installed at a portion of the moving part 255 corresponding to the lower part of the fixed part 251.

[0052] The first buffer member 261 may have the same material and thickness as the second buffer member 117 installed on the inner door 115. The second buffer member 117 is a structure for reducing the impact generated when the inner door 115 collides with the inner shell 111. The second buffer member 117 may also be installed on the inner shell 111.

[0053] According to the above structure, when the inner door 115 moves downward, the conveying part 250 also moves downward and becomes separated from the introduction part 210. When the inner door 115 moves upward, the conveying part 250 also moves upward, so that the connection port 257 is connected to the discharge port 213. During the connection process, the force received by the discharge port 213 and then the discharge nozzle 214 is supported by the support part 123. In addition, the force received by the connection port 257 and then the connection nozzle 258 is buffered by the first buffer member 261. The force received when the inner door 115 contacts the inner shell 111 is buffered by the second buffer member 117.

[0054] Since the first buffer member 261 and the second buffer member 117 are made of the same material and the same thickness, the coupling levels between the inner door 115 and the inner shell 111 and between the discharge port 213 and the connection port 257 can be adjusted to be equal to each other. This can effectively prevent one of the couplings between the two from becoming incomplete.

[0055] The pressure of the protective gas filled in the protective space (the second pressure) is used to prevent the process gas from leaking from between the connection port 257 and the exhaust port 213. Even if the process gas may leak, the leaked process gas can be stably discharged (managed) by the exhaust module 140.

[0056] Figure 6 1 is a conceptual diagram of a lifting driving module 150 for lifting and lowering the outer door 125 of the outer chamber 120 .

[0057] Please refer to Figure 6 , with a lifting drive module 150 for lifting and moving the outer door 125 (and the inner door 115 connected to the outer door).

[0058] The elevating driving module 150 may include a support member 151 and a guide frame 155 .

[0059] The central portion of the support member 151 is formed to support the outer door 125. The central portion of the support member 151 may be disposed horizontally with respect to the ground as a whole.

[0060] The guide frame 155 is used to guide the lifting and lowering of the support member 151. A pair of guide frames 155 are provided, and can be connected to both side peripheries of the support member 151. Thereby, the pair of guide frames 155 can be arranged symmetrically with respect to the support member 151.

[0061] According to the above structure, the support member 151 can be moved in the ascending or descending direction by an actuator (ball screw, etc.) (not shown). In this case, the peripheral portions on both sides of the support member 151 are guided by a pair of guide frames 155. This allows the support member 151 and thus the outer door 125 to be raised and lowered in a stable posture while maintaining a horizontal state.

[0062] The high-pressure substrate processing apparatus and the processing gas line used therefor are not limited to the structure and operation method of the above-mentioned embodiments. The above-mentioned embodiments can be configured to be variously modified by selectively combining all or part of each embodiment.

[0063] Possibility of industrial application

[0064] The present invention has industrial application possibility in the field of manufacturing a high-pressure substrate processing device and a processing gas pipeline used in the device.

Claims

1. A high voltage substrate processing device, wherein: include: The inner chamber comprises: an inner shell formed to accommodate a substrate to be processed; and an inner door movably formed between a closed position for closing the inner shell and an open position for opening the inner shell; The outer chamber comprises: a housing arranged to accommodate the inner chamber; and an outer door movably formed to open and close the housing; and The gas supply module comprises: a processing gas pipeline for supplying a processing gas for processing the substrate to the inner chamber at a first pressure higher than the atmospheric pressure; and a protective gas pipeline for supplying a protective gas to a protective space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure. The process gas pipeline comprises: an introduction portion having a discharge port arranged in the protection space; as well as The conveying part has a connection port connected to the exhaust port at the closed position and moved to be spaced apart from the exhaust port at the open position, and the conveying part conveys the processing gas input from the introduction part into the inner shell.

2. The high voltage substrate processing apparatus according to claim 1, wherein: The introduction portion is disposed through the housing.

3. The high voltage substrate processing apparatus according to claim 1, wherein: The introduction portion is fixedly mounted on the housing.

4. The high voltage substrate processing apparatus according to claim 1, wherein: The housing includes a support portion that supports the discharge port by a force applied relative to the connection port when the inner door moves from the open position to the closed position.

5. The high voltage substrate processing apparatus according to claim 1, wherein: The conveying portion is mounted on the inner door so as to move together when the inner door moves between the closed position and the open position.

6. The high voltage substrate processing apparatus according to claim 1, wherein: The conveying unit comprises: a fixing portion installed on the inner door; and The movable part is installed at a position corresponding to the discharge port and is installed to be movable relative to the fixed part.

7. The high voltage substrate processing apparatus according to claim 6, wherein: The moving portion is formed to be movable along a direction of movement between the closing position and the opening position.

8. The high voltage substrate processing apparatus according to claim 6, wherein: The conveying portion further includes a first buffer member mounted on any one of the fixed portion and the moving portion to mitigate an impact due to a collision with the other of the fixed portion and the moving portion.

9. The high voltage substrate processing apparatus according to claim 8, wherein: The inner chamber further includes a second buffer member mounted on at least one of the inner door and the inner shell to mitigate an impact caused by a collision with the other of the inner door and the inner shell, The first buffer component and the second buffer component have the same material and thickness.

10. The high voltage substrate processing apparatus according to claim 1, wherein: The second pressure is higher than the first pressure.

11. A process gas pipeline for a high-pressure substrate processing device, wherein: include: an introduction portion having a discharge port disposed within a housing of the high-voltage substrate processing device; as well as The conveying portion includes a connection port, the connection port being connected to the exhaust port when the inner door of the high-voltage substrate processing device is in a closed position to close the inner shell contained in the outer shell, and being moved to be separated from the exhaust port when the inner door is in an open position to open the inner shell, so as to convey the processing gas input from the introduction portion into the inner shell, The conveying unit comprises: a fixing portion installed on the inner door; as well as The movable part is installed at a position corresponding to the discharge port and is installed to be movable relative to the fixed part.

12. The process gas pipeline for a high pressure substrate processing apparatus according to claim 11, in, The introduction portion passes through the housing and is fixedly mounted on the housing.

13. The process gas pipeline for a high pressure substrate processing apparatus according to claim 11, wherein: The conveying portion further includes a first buffer member mounted on any one of the fixed portion and the moving portion to mitigate an impact due to a collision with the other of the fixed portion and the moving portion.

14. The process gas pipeline for a high pressure substrate processing apparatus according to claim 13, wherein: When the high-voltage substrate processing apparatus further includes a second buffer member mounted on at least one of the inner door and the inner housing to mitigate an impact caused by a collision with the other of the inner door and the inner housing, The first buffer member has the same material and thickness as the second buffer member.

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