Photo-cured silicon carbide boat and preparation method thereof

Abstract

The invention discloses a photocuring molded silicon carbide boat and a preparation method thereof, and belongs to the field of silicon carbide boat material preparation. By optimizing a prepolymer, a diluent, a photoinitiator and silicon carbide mixed powder, interaction of components is achieved, and a photocuring 3D printing process is combined, so that the silicon carbide mixed powder and the prepolymer are better combined, and the photocuring molded silicon carbide boat is prepared. After curing molding, the silicon carbide boat which is high in precision, excellent in surface quality, free of deformation, large in size and capable of meeting the density requirement is obtained, secondary processing is not needed after sintering, the processing cost and the preparation time are saved, and the problems that in the prior art, due to the fact that silicon carbide powder is dark in color and high in color scattering effect, and the refractive index difference between the silicon carbide powder and photosensitive resin is large are solved. And it is difficult to form and obtain a high-density silicon carbide boat.

Description

Technical Field

[0001] The present invention relates to the field of silicon carbide wafer boat material preparation, and in particular to a photocurable silicon carbide wafer boat and a preparation method thereof. Background Art

[0002] Silicon carbide ceramics have excellent properties such as strong oxidation resistance, good wear resistance, high hardness, good thermal stability, high high temperature strength, small thermal expansion coefficient, high thermal conductivity, and resistance to thermal shock and chemical corrosion. However, it is precisely because of these properties, such as good wear resistance and high hardness, that they face great obstacles in the molding and processing of components and accessories, especially for special-shaped parts with complex structures and shapes, which are difficult to achieve through conventional molding and processing methods, resulting in the difficulty of manufacturing complex silicon carbide ceramic components, which seriously restricts its wider and deeper application. However, complex special-shaped parts can be directly molded through additive manufacturing.

[0003] Silicon carbide wafer boats have broad application prospects in the fields of electronic semiconductors, renewable energy, and 5G technology. The wafer boat consists of four columns and upper and lower base plates. The outer surface of the columns is provided with placement slots corresponding to four directions for placing wafers. Therefore, the dimensional accuracy of the crystal columns is very high, and additive manufacturing is required. The methods of silicon carbide additive manufacturing include powder printing, photocuring 3D printing, etc. The powder printing method is formed by bonding the prepared powder and the binder to each other, resulting in a low density of the printed blank, and then the density of the silicon carbide composite material after sintering is low and the mechanical properties are poor. In the application field of silicon carbide, silicon carbide is required to have a higher density strength. Therefore, the silicon carbide finished products of the powder printing method cannot be widely used.

[0004] However, silicon carbide powder is a dark powder with high ultraviolet light absorption rate, strong scattering effect, and a large difference in refractive index with photosensitive resin, which makes the photocuring molding of silicon carbide ceramics more difficult and increases the difficulty of obtaining higher density.

[0005] The density of general light-curing 3D printed silicon carbide is 2.9g / cm 3 For example, the patent with application number 201911391234.2 uses a photocuring method to print and shape the porous carbon / silicon carbide blank, which is sintered at high temperature and has a finished product density of ≥2.7g / cm 3 Therefore, the silicon carbide formed by photo-curing 3D printing has the problems of low density, poor precision and practicality after sintering. Summary of the invention

[0006] Based on this, in order to solve the technical problems of the difficulty in curing and molding of silicon carbide wafer boats in the prior art and difficulty in obtaining high-density products, the present invention provides a photocurable silicon carbide wafer boat and a preparation method thereof, and the specific technical scheme is as follows:

[0007] A photocurable silicon carbide wafer boat, wherein the volume density of the silicon carbide wafer boat is 2.9 g / cm 3 above.

[0008] In addition, the present application also provides a method for preparing a photocurable silicon carbide wafer boat, the preparation method comprising the following steps:

[0009] Add the prepolymer, diluent, photoinitiator and dispersant into a container, place it in a vacuum degassing stirring device, and stir evenly to obtain a precursor resin;

[0010] Adding the silicon carbide mixed powder and the precursor resin into a ball milling jar, placing the jar in a ball mill, and performing ball milling to obtain silicon carbide ceramic slurry;

[0011] The silicon carbide ceramic slurry is added to a 3D printer, and under ultraviolet light conditions, the printing parameters are adjusted according to the curing condition of the slurry, and a set structural model is imported, and a silicon carbide blank is obtained by a light-curing 3D printing device;

[0012] The silicon carbide blank is subjected to reaction sintering through gas phase siliconization to obtain a silicon carbide wafer boat.

[0013] Furthermore, the prepolymer is at least one of aliphatic polyurethane hexaacrylate, phenolic epoxy acrylate and modified epoxy acrylate.

[0014] Furthermore, the addition amount of the prepolymer accounts for 30wt% to 50wt% of the mass of the precursor resin.

[0015] Furthermore, the diluent is at least one of tripropylene glycol diacrylate, neopentyl glycol diacrylate, ethoxylated bisphenol A diacrylate and lauric acid methacrylate.

[0016] Furthermore, the added amount of the diluent accounts for 50wt% to 80wt% of the mass of the precursor resin.

[0017] Furthermore, the photoinitiator is at least one of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide, PI-184 and 819.

[0018] Furthermore, the added amount of the photoinitiator accounts for 3wt% to 7wt% of the mass of the precursor resin.

[0019] Furthermore, the silicon carbide mixed powder is obtained by mixing A-specification silicon carbide, B-specification silicon carbide and a carbon source of different particle sizes, wherein the particle size distribution of A-specification silicon carbide is 15 μm to 30 μm, the particle size distribution of B-specification silicon carbide is 2 μm to 8 μm, and the particle size distribution of the carbon source is 8 μm to 15 μm.

[0020] Furthermore, the mass ratio of the silicon carbide mixed powder to the precursor resin is (7-8): (2-3).

[0021] Compared with the prior art, this application has the following beneficial effects:

[0022] 1. The present invention optimizes the components of the precursor resin, the components interact with each other, and combines the light-curing 3D printing process to better combine the silicon carbide mixed powder with the prepolymer. After curing and molding, a silicon carbide crystal boat with high precision, excellent surface quality, large size without deformation, and density that meets the requirements is obtained, and no secondary processing is required after sintering, saving processing costs and preparation time. It can solve the problems in the prior art that the excellent silicon carbide powder has a dark color, a strong scattering effect, a large difference in refractive index with the photosensitive resin, can be molded, and is difficult to obtain a high-density silicon carbide crystal boat.

[0023] 2. The present invention adds silicon carbide of different particle sizes and mixes with diamond to obtain a volume density of 2.9 g / cm 3 The above is helpful to obtain silicon carbide wafer boat products with density meeting the requirements. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with its embodiments. It should be understood that the specific implementation methods described herein are only used to explain the present invention and do not limit the scope of protection of the present invention.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0026] A photocurable silicon carbide wafer boat in one embodiment of the present invention has a volume density of 2.9 g / cm 3 above.

[0027] In addition, the present application also provides a method for preparing a photocurable silicon carbide wafer boat, the preparation method comprising the following steps:

[0028] Add the prepolymer, diluent, photoinitiator and dispersant into a container, place it in a vacuum degassing stirring device, and stir evenly to obtain a precursor resin;

[0029] Adding the silicon carbide mixed powder and the precursor resin into a ball milling jar, placing the jar in a ball mill, and performing ball milling to obtain silicon carbide ceramic slurry;

[0030] The silicon carbide ceramic slurry is added to a 3D printer, and under ultraviolet light conditions, the printing parameters are adjusted according to the curing condition of the slurry, and a set structural model is imported, and a silicon carbide blank is obtained by a light-curing 3D printing device;

[0031] The silicon carbide blank is subjected to reaction sintering through gas phase siliconization to obtain a silicon carbide wafer boat.

[0032] In one embodiment, the prepolymer is at least one of aliphatic polyurethane hexaacrylate, phenolic epoxy acrylate and modified epoxy acrylate.

[0033] In one embodiment, the amount of the prepolymer added is 30 wt% to 50 wt% of the precursor resin.

[0034] In one embodiment, the diluent is at least one of tripropylene glycol diacrylate, neopentyl glycol diacrylate, ethoxylated bisphenol A diacrylate and lauric acid methacrylate.

[0035] In one embodiment, the added amount of the diluent accounts for 50wt% to 80wt% of the mass of the precursor resin.

[0036] In one embodiment, the photoinitiator is at least one of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide, PI-184 and 819.

[0037] In one embodiment, the amount of the photoinitiator added is 3 wt % to 7 wt % of the precursor resin.

[0038] In one of the embodiments, the added amount of the dispersant accounts for 3wt% to 5wt% of the mass of the silicon carbide mixed powder.

[0039] In one embodiment, the silicon carbide mixed powder is obtained by mixing A-specification silicon carbide, B-specification silicon carbide and a carbon source with different particle sizes, and the different particle sizes are distributed in the range of 4 μm to 30 μm.

[0040] In one of the embodiments, the mass ratio of the A-grade silicon carbide, the B-grade silicon carbide and the carbon source is (4-7): (1-3): (1-3).

[0041] In one embodiment, the particle size distribution of the silicon carbide of specification A is 15 μm to 30 μm, the particle size distribution of the silicon carbide of specification B is 2 μm to 8 μm, and the particle size distribution of the carbon source is 8 μm to 15 μm.

[0042] In one embodiment, the carbon source is diamond powder.

[0043] In one of the embodiments, the mass ratio of the silicon carbide mixed powder to the precursor resin is (7-8): (2-3).

[0044] In one embodiment, the rotation speed of the ball milling treatment is 200 r / min to 400 r / min, and the ball milling time is 10 h to 16 h.

[0045] In one embodiment, the ultraviolet light condition is ultraviolet light with a wavelength of 405nm.

[0046] In one of the embodiments, the ultraviolet light condition adopts a laser power of 360mW to 450mW and a scanning speed of 5000mm / s to 10000mm / s.

[0047] In one embodiment, the sintering temperature is 1700°C to 1800°C.

[0048] In one embodiment, the precursor resin may further contain a functional additive.

[0049] In the above scheme, by optimizing the ingredients, a silicon carbide ceramic slurry with excellent compatibility can be obtained. Combined with the 3D printing process, a silicon carbide crystal boat with high precision, excellent surface quality and density that meets the requirements can be obtained.

[0050] The embodiments of the present invention will be described in detail below with reference to specific examples.

[0051] Embodiment 1:

[0052] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0053] Aliphatic polyurethane hexaacrylate, tripropylene glycol diacrylate, and lauric acid methacrylate are mixed in a mass ratio of 5:2:3, and then 5 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant accounting for the mass of the silicon carbide mixed powder are added, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0054] Silicon carbide with a particle size of 30 μm, silicon carbide with a particle size of 5 μm, and diamond with a particle size of 15 μm are mixed in a mass ratio of 7:2:1 to obtain a silicon carbide mixed powder;

[0055] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0056] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a single-layer curing test is performed by a light-curing 3D printing device to obtain a silicon carbide blank;

[0057] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0058] Embodiment 2:

[0059] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0060] Modified epoxy acrylate, neopentyl glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:2:3, and then 5wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3wt% of dispersant are added to the precursor resin, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0061] Silicon carbide with a particle size of 30 μm, silicon carbide with a particle size of 5 μm, and diamond with a particle size of 15 μm are mixed in a mass ratio of 7:2:1 to obtain a silicon carbide mixed powder;

[0062] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0063] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a single-layer curing test is performed by a light-curing 3D printing device to obtain a silicon carbide blank;

[0064] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0065] Embodiment 3:

[0066] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0067] Modified epoxy acrylate, neopentyl glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:3:2, and then 7 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant accounting for the mass of the silicon carbide mixed powder are added, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0068] Silicon carbide with a particle size of 30 μm, silicon carbide with a particle size of 5 μm, and diamond with a particle size of 15 μm are mixed in a mass ratio of 7:2:1 to obtain a silicon carbide mixed powder;

[0069] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0070] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a single-layer curing test is performed by a light-curing 3D printing device to obtain a silicon carbide blank;

[0071] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0072] The silicon carbide ceramic slurries of Examples 1 to 3 were subjected to 3D printing tests, and the corresponding related properties were obtained as shown in Table 1.

[0073] Table 1: Test results of Examples 1 to 3

[0074]

[0075] Embodiment 4:

[0076] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0077] Modified epoxy acrylate, neopentyl glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:3:2, and then 7 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant are added to the precursor resin, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0078] Silicon carbide with a particle size of 30 μm, silicon carbide with a particle size of 5 μm, and diamond with a particle size of 15 μm are mixed in a mass ratio of 6:3:1 to obtain a silicon carbide mixed powder;

[0079] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0080] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a cylinder with a volume density is tested by a light-curing 3D printing device to obtain a silicon carbide blank;

[0081] The silicon carbide blank is subjected to gas phase siliconization reaction sintering at 1700° C. to obtain a silicon carbide wafer boat.

[0082] Embodiment 5:

[0083] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0084] Modified epoxy acrylate, neopentyl glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:3:2, and then 7 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant are added to the precursor resin, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0085] Silicon carbide with a particle size of 30 μm, silicon carbide with a particle size of 5 μm, and diamond with a particle size of 15 μm are mixed in a mass ratio of 5:3:2 to obtain a silicon carbide mixed powder;

[0086] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0087] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a cylinder with a volume density is tested by a light-curing 3D printing device to obtain a silicon carbide blank;

[0088] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0089] Embodiment 6:

[0090] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0091] Modified epoxy acrylate, neopentyl glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:3:2, and then 7 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant accounting for the mass of the silicon carbide mixed powder are added, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0092] Silicon carbide with a particle size of 30 μm, silicon carbide with a particle size of 5 μm, and diamond with a particle size of 15 μm are mixed in a mass ratio of 5:3:2 to obtain a silicon carbide mixed powder;

[0093] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7.2:2.8, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0094] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a cylinder with a volume density is tested by a light-curing 3D printing device to obtain a silicon carbide blank;

[0095] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0096] The performance of Examples 4 to 6 was tested, and the results are shown in Table 2.

[0097] Table 2: Test results of Examples 4 to 6

[0098]

[0099] From the analysis in Table 2, we can see that by changing the proportion of silicon carbide particle size and increasing the amount of small-sized silicon carbide particles, the two sizes of silicon carbide particles can fill the gaps between each other, and the small particles can enter the gaps that large particles cannot enter, playing a "lubricating" role and forming a tight stack, thereby effectively reducing the viscosity of the slurry, increasing the maximum volume fraction of the slurry, and then increasing the volume density. However, at the same time, some of the curing performance will be lost. In Example 6, the volume density of silicon carbide after printing and sintering reaches 3.02 g / cm 3 , which meets Jingzhou’s performance requirements for silicon carbide.

[0100] The slurry formula in Example 6 was used to prepare silicon carbide slurry and print a large-sized silicon carbide crystal boat. The size of the crystal boat base was 210*190*6mm, and the length of the crystal column was 280mm. The sintered sample had no deformation or cracking, and the density was 3.02 g / cm 3 .

[0101] Comparative Example 1:

[0102] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0103] Novolac epoxy acrylate, tripropylene glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:2:3, and then 5 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant are added to the precursor resin, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0104] Silicon carbide with a particle size of 30 μm and silicon carbide with a particle size of 5 μm are mixed in a mass ratio of 7:3 to obtain a silicon carbide mixed powder;

[0105] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0106] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a cylinder with a volume density is tested by a light-curing 3D printing device to obtain a silicon carbide blank;

[0107] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0108] Comparative Example 2:

[0109] A method for preparing a photocurable silicon carbide wafer boat comprises the following steps:

[0110] Novolac epoxy acrylate, tripropylene glycol diacrylate and lauric acid methacrylate are mixed in a mass ratio of 5:2:3, and then 5 wt% of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide and 3 wt% of dispersant accounting for the mass of the silicon carbide mixed powder are added, and the mixture is placed in a vacuum degassing stirring device and stirred evenly to obtain a precursor resin;

[0111] Mixing silicon carbide with a particle size of 30 μm and silicon carbide with a particle size of 5 μm in a mass ratio of 5:5 to obtain a silicon carbide mixed powder;

[0112] The silicon carbide mixed powder and the precursor resin are added to a ball milling jar at a mass ratio of 7:3, placed in a ball mill, and ball milled at a speed of 300 r / min for 10 hours to obtain a silicon carbide ceramic slurry;

[0113] The silicon carbide ceramic slurry is placed under ultraviolet light with a wavelength of 405 mm, a power of 400 mW, and a scanning speed of 6000 mm / s, and a cylinder with a volume density is tested by a light-curing 3D printing device to obtain a silicon carbide blank;

[0114] The silicon carbide blank is subjected to reaction sintering of the gas phase siliconization at 1700° C. to obtain a silicon carbide wafer boat.

[0115] The performance of Comparative Examples 1 and 2 was tested, and the results are shown in Table 3 below.

[0116] Table 3: Comparative Examples 1 to 2 Test Results

[0117]

[0118]

[0119] It can be seen from Table 3 that when the prepolymer is replaced and diamond is not added, the viscosity of the silicon carbide ceramic slurry of the present application increases, the solidified thickness decreases, and the density of the sintered silicon carbide boat is lower than 2.9 g / cm 3 , it is impossible to obtain silicon carbide wafer boat products with density that meets the requirements.

[0120] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0121] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A photocurable silicon carbide wafer boat, characterized in that: The volume density of the silicon carbide wafer boat is 2.9 g / cm 3 above.

2. A method for preparing a photocurable silicon carbide wafer boat, characterized in that: The preparation method is used to prepare the silicon carbide wafer boat as claimed in claim 1, and the preparation method comprises the following steps: Add the prepolymer, diluent, photoinitiator and dispersant into a container, place it in a vacuum degassing stirring device, and stir evenly to obtain a precursor resin; Adding the silicon carbide mixed powder and the precursor resin into a ball milling jar, placing the jar in a ball mill, and performing ball milling to obtain silicon carbide ceramic slurry; The silicon carbide ceramic slurry is added to a 3D printer, and under ultraviolet light conditions, the printing parameters are adjusted according to the curing condition of the slurry, and a set structural model is imported, and a silicon carbide blank is obtained by a light-curing 3D printing device; The silicon carbide blank is subjected to reaction sintering through gas phase siliconization to obtain a silicon carbide wafer boat.

3. The preparation method according to claim 1, characterized in that: The prepolymer is at least one of aliphatic polyurethane hexaacrylate, phenolic epoxy acrylate and modified epoxy acrylate.

4. The preparation method according to claim 3, characterized in that: The added amount of the prepolymer accounts for 30wt% to 50wt% of the mass of the precursor resin.

5. The preparation method according to claim 1, characterized in that: The diluent is at least one of tripropylene glycol diacrylate, neopentyl glycol diacrylate, ethoxylated bisphenol A diacrylate and lauric acid methacrylate.

6. The preparation method according to claim 5, characterized in that: The added amount of the diluent accounts for 50wt% to 80wt% of the mass of the precursor resin.

7. The preparation method according to claim 1, characterized in that: The photoinitiator is at least one of diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide, PI-184 and 819.

8. The preparation method according to claim 7, characterized in that: The added amount of the photoinitiator accounts for 3wt% to 7wt% of the mass of the precursor resin.

9. The preparation method according to claim 1, characterized in that: The silicon carbide mixed powder is obtained by mixing A-specification silicon carbide, B-specification silicon carbide and a carbon source of different particle sizes. The particle size distribution of A-specification silicon carbide is 15μm-30μm, the particle size distribution of B-specification silicon carbide is 2μm-8μm, and the particle size distribution of the carbon source is 8μm-15μm.

10. The preparation method according to claim 9, characterized in that: The mass ratio of the silicon carbide mixed powder to the precursor resin is (7-8): (2-3).

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