Diamond seed crystal processing method and processing device thereof

Abstract

The invention discloses a processing method and a processing device of diamond seed crystals, and the processing method of the diamond seed crystals comprises the following steps: uniformly coating glue on a processing platform and the diamond seed crystals, placing the diamond seed crystals on the processing platform, heating and solidifying the glue between the diamond seed crystals and the processing platform, the method comprises the following steps: placing a diamond seed crystal into a processing platform, placing a tabletting mechanism on the diamond seed crystal for pressing, heating glue between the diamond seed crystal and the processing platform for curing, finally placing the diamond seed crystal and the processing platform into growth equipment, and carbonizing the glue between the diamond seed crystal and the processing platform, so that the diamond seed crystal is connected with the processing platform. The machining device can execute the machining method. By means of the arrangement, the diamond seed crystals can be prevented from position deviation in the growth process, then the growth quality of the diamond seed crystals is improved, glue is arranged at the bottoms of the diamond seed crystals and carbonized, and uniform heat dissipation of the diamond seed crystals can be kept in the machining process.

Description

Technical Field

[0001] The present application relates to the technical field of diamond processing, and in particular to a method for processing a diamond seed crystal and a processing device thereof. Background Art

[0002] Diamond has the characteristics of high critical electric field strength and high carrier mobility, and has high application value in industrial production. However, the quantity and quality of naturally generated diamonds cannot meet industrial requirements, so it is necessary to artificially manufacture diamonds to obtain diamonds that meet the requirements.

[0003] At present, most artificial diamonds are prepared by microwave plasma chemical vapor deposition. When this method is used for homoepitaxial growth of single-crystal diamond, a pre-polished diamond seed crystal needs to be placed on a molybdenum table for epitaxial growth. However, the single-crystal diamond seed crystal is thin and light in weight. During the vacuum and heating process, it will be affected by factors such as airflow and plasma discharge and will shift in position, which will affect the quality of the diamond seed crystal growth.

[0004] Meanwhile, in the prior art, a connection layer is generally formed by growing the bottom of the diamond seed crystal so that the bottom of the diamond seed crystal is connected to the surface of the molybdenum table, but uniform heat dissipation of the diamond seed crystal during processing cannot be achieved.

[0005] Therefore, how to improve the growth quality of diamond seed crystals and achieve uniform heat dissipation of diamond seed crystals during processing is a technical problem that urgently needs to be solved in this field. Summary of the invention

[0006] In order to solve the deficiencies of the prior art, the purpose of the present application is to provide a method and a device for processing a diamond seed crystal, which can improve the quality of the growth of the diamond seed crystal and achieve uniform heat dissipation of the diamond seed crystal during the processing.

[0007] To achieve the above objectives, this application adopts the following technical solutions:

[0008] A method for processing diamond seed crystals is applicable to a processing device for diamond seed crystals. The processing device for diamond seed crystals comprises a glue spreader, a processing platform, a tablet pressing mechanism and a growth device. The processing platform is used for carrying the diamond seed crystals, the tablet pressing mechanism is used for pressing the diamond seed crystals, and the growth device is used for diamond growth.

[0009] The processing method of diamond seed crystal includes: glue leveling, glue adhesion and curing, tableting and curing, and carbonization. The processing platform and the diamond seed crystal are glued by a glue leveling machine; the diamond seed crystal is placed on the processing platform, and the diamond seed crystal and the processing platform are heated to solidify the glue between the diamond seed crystal and the processing platform; the tableting mechanism is placed on the diamond seed crystal so that the pressing force acts on the diamond seed crystal, and the glue between the diamond seed crystal and the processing platform is heated to solidify the glue between the diamond seed crystal and the processing platform, so that the diamond seed crystal and the processing platform are connected; the diamond seed crystal and the processing platform are placed in the growth equipment, and the glue between the diamond seed crystal and the processing platform is carbonized to connect the diamond seed crystal and the processing platform.

[0010] Furthermore, carbonizing the glue between the diamond seed crystal and the processing platform includes: evacuating the growth chamber of the growth equipment and then introducing hydrogen, igniting plasma with microwaves, gradually increasing the air pressure in the growth chamber and the input microwave power until the temperature of the diamond seed crystal reaches a first preset temperature, allowing the plasma to etch excess glue on the surface of the diamond seed crystal and the surface of the processing platform, then increasing the air pressure and microwave power, causing the temperature of the diamond seed crystal to slowly rise to a second preset temperature, and maintaining the second preset temperature until the glue at the bottom of the diamond seed crystal is completely carbonized, wherein the second preset temperature is greater than the first preset temperature.

[0011] Furthermore, the processing device includes a limiting mechanism, which has a limiting hole. The gluing and curing include: placing the limiting mechanism on the processing platform, and placing the diamond seed crystal in the limiting hole; heating the diamond seed crystal and the processing platform to solidify the glue between the diamond seed crystal and the processing platform; and removing the limiting mechanism from the processing platform.

[0012] Furthermore, a plurality of limiting holes are provided, and a diamond seed crystal is placed in each limiting hole.

[0013] Furthermore, a plurality of limiting holes are provided, and at least one limiting hole is not provided with a diamond seed crystal.

[0014] Furthermore, the heating and curing time in the process of gluing and curing is shorter than the heating and curing time in the process of tableting and curing, and the heating and curing temperature in the process of gluing and curing is lower than the heating and curing temperature in the process of tableting and curing.

[0015] Furthermore, gluing the processing platform and the diamond seed crystal by means of a gluing machine comprises: placing the processing platform on the platform of the gluing machine, and extracting the air between the processing platform and the platform of the gluing machine so that the processing platform and the platform of the gluing machine are tightly combined; starting the gluing machine and dripping glue onto the processing platform in batches until the gluing of the processing platform is completed; placing the diamond seed crystal on the platform of the gluing machine, and extracting the air between the diamond seed crystal and the platform of the gluing machine so that the diamond seed crystal and the platform of the gluing machine are tightly combined; starting the gluing machine and dripping glue onto the diamond seed crystal in batches until the gluing of the diamond seed crystal is completed.

[0016] Furthermore, the sheet pressing mechanism is used to press out excess glue and bubbles between the diamond seed crystal and the processing platform.

[0017] Furthermore, the processing device includes a weight-increasing mechanism, which is used to increase the pressing force of the pressing mechanism on the diamond seed crystal; placing the pressing mechanism on the diamond seed crystal so that the pressing force acts on the diamond seed crystal includes: placing the pressing mechanism on the diamond seed crystal; placing the weight-increasing mechanism on the pressing mechanism to press out excess glue and bubbles between the diamond seed crystal and the processing platform.

[0018] To achieve the above objectives, this application adopts the following technical solutions:

[0019] A diamond seed crystal processing device, which can execute the diamond seed crystal processing method mentioned above.

[0020] The processing method and the processing device of the diamond seed crystal are as follows: a glue is spread between the diamond seed crystal and the processing platform by a glue spreader, and then the diamond seed crystal and the processing platform are heated to make the glue initially solidify and adhere to the diamond seed crystal and the processing platform, and then a sheet pressing mechanism is used to press the diamond seed crystal and heat the diamond seed crystal and the processing platform to further solidify the glue, and finally the diamond seed crystal and the processing platform are placed in a growth device to carbonize the glue, so that the position of the diamond seed crystal will not shift during the processing, thereby improving the production quality of the diamond seed crystal, and after the glue is carbonized, the bottom of the diamond seed crystal and the processing platform are connected, so that the diamond seed crystal can maintain uniform heat dissipation during the processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A structural diagram of a diamond seed crystal processing device provided in an embodiment of the present application.

[0022] Figure 2 A flow chart of a method for processing a diamond seed crystal provided in an embodiment of the present application.

[0023] Figure 3 A flow chart of carbonization provided in an embodiment of the present application.

[0024] Figure 4 A structural diagram of the limiting mechanism provided in an embodiment of the present application.

[0025] Figure 5 A flow chart of gluing and curing provided in an embodiment of the present application.

[0026] Figure 6 A flow chart of glue spreading provided in an embodiment of the present application.

[0027] Figure 7 This is a structural diagram of the weight-increasing mechanism provided in an embodiment of the present application.

[0028] Figure 8 A flow chart of tableting and curing provided in an embodiment of the present application.

[0029] Explanation of the reference numerals: 100, processing device; 11, glue leveling machine; 12, processing platform; 13, tablet pressing mechanism; 14, growing equipment; 15, limiting mechanism; 151, limiting hole; 16, weight increasing mechanism. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation manner of the present application will be clearly and completely described below in conjunction with the drawings in the implementation manner of the present application.

[0031] It should be noted that the words "first", "second" and similar words used in the specification and claims of this application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "a" do not indicate a quantitative limitation, but indicate the existence of at least one. "Multiple" or "several" means at least two. Unless otherwise specified, words such as "front", "back", "left", "right", "bottom" and / or "top" are only for the convenience of description and are not limited to one position or one spatial orientation. Words such as "include" or "comprise" mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect.

[0032] The singular forms "a", "said" and "the" used in this specification and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0033] like Figure 1As shown, the present application provides a diamond seed crystal processing device 100. The processing device 100 is used to process the diamond seed crystal into the required single crystal diamond.

[0034] The diamond seed crystal processing device 100 includes a coating machine 11 , a processing platform 12 , a tablet pressing mechanism 13 and a growth device 14 .

[0035] Specifically, the glue machine 11 is used to glue the diamond seed crystal and the processing platform 12. Through the above settings, the glue machine 11 glues the processing platform 12 and the diamond seed crystal to facilitate the subsequent connection between the diamond seed crystal and the processing platform 12, so that the diamond seed crystal can be stably set on the processing platform 12, and then the diamond seed crystal will not be positionally offset, which is beneficial to improve the growth quality of the diamond seed crystal. At the same time, the glue machine 11 maintains uniform injection of glue when glueing the diamond seed crystal and the processing platform 12, so that the glue can be evenly attached to the diamond seed crystal and the processing platform 12, which is beneficial to the subsequent connection between the diamond seed crystal and the processing platform 12.

[0036] Specifically, the processing platform 12 is used to carry the diamond seed crystal. Through the above arrangement, the processing platform 12 supports the diamond seed crystal to grow, so that the required single crystal diamond can be obtained later.

[0037] Specifically, the pressing mechanism 13 is used to press the diamond seed crystal. Through the above arrangement, the excess glue and bubbles between the diamond seed crystal and the processing platform 12 are pressed out, which can prevent bubbles from emitting or glue from flowing during the heating process, so as to prevent the position of the diamond seed crystal from shifting, thereby improving the growth quality of the diamond seed crystal.

[0038] Specifically, the growth device 14 is used for diamond growth. Through the above-mentioned setting, the diamond seed crystal and the processing platform 12 are placed in the growth device 14, so that the diamond seed crystal can be grown into a single crystal diamond actually required. At the same time, the glue between the diamond seed crystal and the processing platform 12 is carbonized in the growth device 14, which can further increase the connection strength between the diamond seed crystal and the processing platform 12, so as to improve the stability of the diamond seed crystal on the processing platform 12, thereby improving the growth quality of the diamond seed crystal; and the carbonized glue can also increase the thermal conductivity of the diamond seed crystal, so that the diamond seed crystal maintains uniform heat dissipation during the processing.

[0039] In the present application, the processing platform 12 may be a molybdenum platform, the glue may be a polyimide adhesive, and the growth equipment 14 may be an MPCVD diamond growth equipment, that is, a microwave plasma chemical vapor deposition diamond growth equipment.

[0040] It should be noted that the processing platform 12 may also be a device made of other materials and the present application does not impose any limitation on this.

[0041] like Figure 2 As shown, the present application provides a method for processing a diamond seed crystal, and the processing method is applicable to a diamond seed crystal processing device 100, so that the diamond seed crystal can be processed into a single crystal diamond actually required using the processing device 100.

[0042] The method for processing diamond seed crystal comprises the following steps:

[0043] S1: Glue homogenization, glue homogenization is performed on the processing platform 12 and the diamond seed crystal by the glue homogenizer 11. Through the above-mentioned setting, glue is evenly injected between the processing platform 12 and the diamond seed crystal, which is conducive to the subsequent connection between the diamond seed crystal and the processing platform 12, so that the diamond seed crystal can be stably set on the processing platform 12, and then the diamond seed crystal will not be positionally offset, which is conducive to improving the growth quality of the diamond seed crystal. At the same time, the glue homogenizer 11 keeps the glue uniformly injected when homogenizing the diamond seed crystal and the processing platform 12, so that the glue can be evenly attached to the diamond seed crystal and the processing platform 12, which is conducive to the subsequent connection between the diamond seed crystal and the processing platform 12.

[0044] S2: Gluing and curing, placing the diamond seed crystal on the processing platform 12, and heating the diamond seed crystal and the processing platform 12 to solidify the glue between the diamond seed crystal and the processing platform 12. Through the above settings, glue is injected between the diamond seed crystal and the processing platform 12 by the glue spreader 11, and heated to preliminarily solidify the glue, so that the diamond seed crystals can be placed on the processing platform 12 according to the required number and distribution position.

[0045] S3: Pressing and curing, placing the pressing mechanism 13 on the diamond seed crystal so that the pressing force acts on the diamond seed crystal, and heating to cure the glue between the diamond seed crystal and the processing platform 12, so that the diamond seed crystal and the processing platform 12 are connected. Through the above settings, after the diamond seed crystal and the processing platform 12 are glued and cured, the diamond seed crystal is pressed on the processing platform 12 by means of the pressing mechanism 13, and then heated to completely cure the glue, which can reduce the gap between the diamond seed crystal and the processing platform 12, and improve the tightness of the connection between the diamond seed crystal and the processing platform 12, so as to reduce the possibility of the diamond seed crystal being offset after being placed in the growth device 14, thereby improving the growth quality of the diamond seed crystal. In addition, the pressing mechanism 13 presses the diamond seed crystal on the processing platform 12, so that the diamond seed crystal will not be relatively displaced with the processing platform 12 during the curing of the glue, so that the spacing between different diamond seed crystals remains relatively fixed, thereby obtaining a diamond seed crystal that meets the requirements.

[0046] S4: Carbonization, placing the diamond seed crystal and the processing platform 12 into the growth device 14, and carbonizing the glue between the diamond seed crystal and the processing platform 12 to connect the diamond seed crystal and the processing platform 12. Through the above-mentioned setting, the glue between the diamond seed crystal and the processing platform 12 is carbonized, which can further strengthen the connection strength between the diamond seed crystal and the processing platform 12, so that the possibility of deviation between the diamond seed crystal and the processing platform 12 is further reduced, thereby improving the quality of the diamond seed crystal growth. At the same time, after the glue between the diamond seed crystal and the processing platform 12 is carbonized, the diamond seed crystal can achieve uniform heat dissipation during the heating process, so that the diamond seed crystal can maintain temperature uniformity. In addition, the electrical conductivity of the polyimide adhesive is improved after carbonization, which can improve the growth efficiency of the diamond seed crystal.

[0047] like Figure 3 As shown, the carbonization of the glue between the diamond seed crystal and the processing platform 12 in step S4 includes the following steps:

[0048] S41: After evacuating the growth chamber of the growth device 14, hydrogen is introduced and microwaves are used to ignite plasma. The air pressure in the growth chamber and the input microwave power are gradually increased until the temperature of the diamond seed crystal reaches a first preset temperature, so that the plasma etches excess glue on the surface of the diamond seed crystal and the surface of the processing platform 12. Then, the air pressure and microwave power are increased to slowly increase the temperature of the diamond seed crystal to a second preset temperature, and the second preset temperature is maintained until the glue at the bottom of the diamond seed crystal is completely carbonized.

[0049] Wherein, the second preset temperature is greater than the first preset temperature. Through the above settings, the diamond seed crystal is heated to the first preset temperature, wherein the first preset temperature is the temperature required for plasma to remove excess glue on the surface of the diamond seed crystal and the surface of the processing platform 12 by etching, so as to avoid the excess glue affecting the subsequent growth of the diamond seed crystal, thereby improving the growth quality of the diamond seed crystal. The diamond seed crystal is heated to the second preset temperature, wherein the second preset temperature is the temperature required for the glue at the bottom of the diamond seed crystal to be completely carbonized, and the second preset temperature is greater than the first preset temperature, so that the glue between the diamond seed crystal and the processing platform 12 can be completely carbonized after removing the excess glue, thereby accurately improving the connection strength between the diamond seed crystal and the processing platform 12, so as to reduce the possibility of the diamond seed crystal and the processing plane being offset.

[0050] like Figure 4 and Figure 5 As shown, the processing device 100 includes a limiting mechanism 15, which is used to control the intervals between different diamond seed crystals. The limiting mechanism 15 is provided with a limiting hole 151, which is used to place the diamond seed crystals.

[0051] In this embodiment, gluing and curing includes the following steps:

[0052] S21: placing the limiting mechanism 15 on the processing platform 12, and placing the diamond seed crystal in the limiting hole 151;

[0053] S22: heating the diamond seed crystal and the processing platform 12 to solidify the glue between the diamond seed crystal and the processing platform 12;

[0054] S23: removing the limiting mechanism 15 from the processing platform 12 .

[0055] Through the above-mentioned setting, the diamond seed crystal is placed in the limiting hole 151 and then initially solidified, so that the spacing between different diamond seed crystals can be controlled. After initial solidification, the diamond seed crystal is initially adhered to the processing platform 12, and removing the limiting mechanism 15 will not affect the spacing between the diamond seed crystals, thereby better meeting the spacing requirements of different diamond seed crystals.

[0056] As an embodiment, a plurality of limiting holes 151 are provided, and a diamond seed crystal is placed in each limiting hole 151. Through the above arrangement, diamond seed crystals are placed in the plurality of limiting holes 151, which can increase the number of diamond seed crystals adhered to the single processing platform 12, thereby improving the efficiency of diamond seed crystal growth.

[0057] As an implementation mode, a plurality of limiting holes 151 are provided, and no diamond seed crystal is provided in at least one limiting hole 151. Through the above configuration, whether diamond seed crystals are provided in different limiting holes 151 according to actual needs can improve the selectivity of the number of diamond seed crystals provided to meet the needs of different diamond seed crystal growth.

[0058] In the present application, if the height of the diamond seed crystal exceeds the height of the limiting hole 151 , a pressing mechanism 13 having a cross-sectional size matched with the limiting device is provided and placed on the diamond seed crystal, thereby pressing the diamond seed crystal and the processing platform 12 .

[0059] If the height of the diamond seed crystal does not exceed the height of the limiting hole 151, each limiting hole 151 is provided with a pressing mechanism 13 adapted to the limiting hole 151 to press the diamond seed crystal in each limiting hole 151 against the processing platform 12. At this time, the pressing mechanism 13 can be placed in the limiting hole 151.

[0060] It should be noted that the sheet pressing mechanism 13 may be a metal plate with a certain weight.

[0061] It should be noted that the size of the limiting holes 151 and the spacing between the limiting holes 151 are adjusted according to the structural size and the actual demand for the growth of diamond seed crystals.

[0062] As an embodiment, the heating and curing time in the gluing and curing is shorter than the heating and curing time in the tableting and curing, and the heating and curing temperature in the gluing and curing is lower than the heating and curing temperature in the tableting and curing. Through the above-mentioned settings, in the gluing and curing step, a shorter heating and curing time and a lower heating and curing temperature are used, so that the glue between the diamond seed crystal and the processing platform 12 can be initially solidified, so that the diamond seed crystal can maintain the set position and set orientation on the processing platform 12, so that the diamond seed crystal can grow into a desired shape. At the same time, in the tableting and curing step, after the gluing and curing steps are completed, the distribution position and orientation of the diamond seed crystal on the processing platform 12 have been determined, and then a longer heating and curing time and a higher heating and curing temperature are used, so that the diamond seed crystal can be firmly fixed on the processing platform 12, avoiding the position displacement of the diamond seed crystal during the subsequent processing process, thereby improving the quality of the diamond seed crystal growth.

[0063] like Figure 6 As shown, the process of performing glue coating on the processing platform 12 and the diamond seed crystal by the glue coating machine 11 includes the following steps:

[0064] S11: placing the processing platform 12 on the platform of the glue machine 11, and extracting the air between the processing platform 12 and the platform of the glue machine 11, so that the processing platform 12 and the platform of the glue machine 11 are tightly combined;

[0065] S12: Turn on the glue leveler 11 and drip glue onto the processing platform 12 in batches until the processing platform 12 is completely glued. Through the above settings, the air between the processing platform 12 and the platform of the glue leveler 11 can be removed, and the possibility of bubbles between the processing platform 12 and the platform of the glue leveler 11 after glue leveling can be reduced, thereby avoiding bubbles from emitting during the heating process of the processing platform 12, so as to improve the stability of the connection between the processing platform 12 and the glue leveler 11. At the same time, injecting glue between the processing platform 12 and the platform of the glue leveler 11 in batches can make the glue evenly fill the space between the processing platform 12 and the platform of the glue leveler 11, thereby avoiding uneven distribution of glue injection between the processing platform 12 and the platform of the glue leveler 11, so as to improve the stability of the processing platform 12 placed on the platform of the glue leveler 11.

[0066] S13: placing the diamond seed crystal on the platform of the coater 11, and removing the air between the diamond seed crystal and the platform of the coater 11, so that the diamond seed crystal and the platform of the coater 11 are tightly combined;

[0067] S14: Turn on the glue leveling machine 11 and drip glue onto the diamond seed crystal in batches until the glue leveling of the diamond seed crystal is completed. Through the above settings, the air between the diamond seed crystal and the platform of the glue leveling machine 11 can be removed to avoid bubbles generated when the glue leveling machine 11 injects glue on the surface of the diamond seed crystal, thereby avoiding bubbles from emerging during the heating process to affect the growth direction of the diamond seed crystal, so as to improve the growth quality of the diamond seed crystal. At the same time, dripping glue onto the diamond seed crystal in batches can make the glue evenly adhere to the diamond seed crystal, avoiding too much glue adhering to some parts of the diamond seed crystal, thereby improving the growth quality of the diamond seed crystal.

[0068] It should be noted that the steps shown in the above process or the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although the logical order is shown in the flowchart, in some cases, the steps shown or described can be performed in a different order than here. For example, step S13 and step S14 can be performed after step S11 and step S12.

[0069] like Figure 7 and Figure 8 As shown, the sheet pressing mechanism 13 is used to press out the excess glue and bubbles between the diamond seed crystal and the processing platform 12. Through the above arrangement, bubbles can be prevented from emitting or glue from flowing during the heating process, causing the position of the diamond seed crystal to shift, thereby improving the stability of the position of the diamond seed crystal on the processing platform 12 and improving the growth quality of the diamond seed crystal.

[0070] In this embodiment, the processing device 100 includes a weight-increasing mechanism 16 , which is used to increase the pressing force of the tablet pressing mechanism 13 on the diamond seed crystal.

[0071] The step S3 of placing the pressing mechanism 13 on the diamond seed crystal so that the pressing force acts on the diamond seed crystal includes the following steps:

[0072] S31: placing the tablet pressing mechanism 13 on the diamond seed crystal;

[0073] S32: placing the weight-increasing mechanism 16 on the tablet pressing mechanism 13 to press out the excess glue and bubbles between the diamond seed crystal and the processing platform 12 .

[0074] Through the above-mentioned configuration, a weight-increasing mechanism 16 is provided on the sheet pressing mechanism 13, so that the pressing force applied to the diamond seed crystal can be increased, and the excess glue and bubbles between the diamond seed crystal and the processing platform 12 can be more thoroughly pressed out, thereby reducing the influence of the excess glue and bubbles on the position of the diamond seed crystal, so as to improve the growth quality of the diamond seed crystal.

[0075] As an embodiment, the present application also provides a diamond seed crystal processing device 100, which can execute a diamond seed crystal processing method.

[0076] In this application, as an optional implementation, the steps of the diamond seed crystal processing method are as follows:

[0077] Apply glue to the processing platform 12, turn on the glue spreader 11 and set the speed to 500r / min, then drip glue into the middle of the processing platform 12 in batches, increase the speed of the glue spreader 11 to 1000r / min-2000r / min after 1min of glue spreading, continue to add glue, and slowly reduce the speed of the glue spreader 11 until it stops after 3min of glue spreading.

[0078] After the glue-smoothing step is completed, the glue-smoothing processing platform 12 is placed on the heating platform, and the processing platform 12 is slowly heated to 120°C, and then the processing platform 12 is maintained at 120°C for 5 minutes. Then the limiting mechanism 15 is placed on the processing platform 12. After the limiting mechanism 15 is placed, the diamond seed crystal is placed on the platform of the glue-smoothing machine 11, and the diamond seed crystal is glued according to the glue-smoothing process of the processing platform 12. The glue-smoothing diamond seed crystal is placed in the limiting hole 151 of the limiting mechanism 15, and the glue-smoothing diamond seed crystal is repeatedly placed in the limiting hole 151 until the limiting mechanism 15 is filled. After the limiting mechanism 15 is filled, the processing platform 12 is placed on the heating platform, and the processing platform 12 is heated to 120°C for 5 minutes to complete the gluing and curing steps.

[0079] After the gluing and curing steps are completed, the limiting mechanism 15 is removed, and the pressing mechanism 13 is placed on the diamond seed crystal. The heating platform is slowly heated to 350°C and maintained for 1 hour. After the heating platform is heated, it is cooled to room temperature, and then the pressing mechanism 13 is removed to complete the pressing and curing steps.

[0080] After the pressing and curing steps are completed, carbonization is performed, and the first preset temperature is set to 350°C and the second preset temperature is set to 500°C for illustration. The diamond seed crystal and the processing platform 12 that have been connected after curing are placed in the growth device 14, and the growth device 14 is evacuated and hydrogen is introduced and the plasma is ignited by microwaves. Then, the air pressure in the growth device 14 and the input microwave power are gradually increased until the temperature of the diamond seed crystal reaches 350°C, so that the plasma etches the excess glue on the upper surface of the diamond seed crystal and the surface of the processing platform 12. The above plasma etching glue step lasts for 30min-60min. After the plasma etching glue is completed, the air pressure and microwave power are slowly increased, so that the temperature of the diamond seed crystal slowly rises to 500°C and is maintained for 1h to 2h, until the glue at the bottom of the wafer is carbonized, so that the diamond seed crystal is connected to the processing platform 12, thereby completing the carbonization process.

[0081] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A method for processing a diamond seed crystal, applicable to a diamond seed crystal processing device (100), characterized in that: The processing device (100) comprises a coating machine (11), a processing platform (12) for carrying diamond seed crystals, a tablet pressing mechanism (13) having a pressing force acting on the diamond seed crystals, and a growth device (14) for growing diamonds; The processing method comprises: Glue spreading: Glue spreading the processing platform (12) and the diamond seed crystal by means of the glue spreading machine (11); Gluing and curing: placing the diamond seed crystal on the processing platform (12), and heating the diamond seed crystal and the processing platform (12) so that the glue between the diamond seed crystal and the processing platform (12) is cured; Pressing and curing: placing the pressing mechanism (13) on the diamond seed crystal so that the pressing force acts on the diamond seed crystal, and heating to cure the glue between the diamond seed crystal and the processing platform (12) so that the diamond seed crystal and the processing platform (12) are connected; Carbonization: placing the diamond seed crystal and the processing platform (12) into the growth device (14), and carbonizing the glue between the diamond seed crystal and the processing platform (12) so that the diamond seed crystal and the processing platform (12) are connected.

2. The method for processing diamond seed crystal according to claim 1, characterized in that: The step of carbonizing the glue between the diamond seed crystal and the processing platform (12) comprises: The growth chamber of the growth device (14) is evacuated and then hydrogen is introduced, and microwaves are used to ignite plasma, and the air pressure and microwave power in the growth chamber are gradually increased until the temperature of the diamond seed crystal reaches a first preset temperature, so that the plasma etches the excess glue on the surface of the diamond seed crystal and the surface of the processing platform (12), and then the air pressure and microwave power are increased to slowly increase the temperature of the diamond seed crystal to a second preset temperature, and the second preset temperature is maintained until the glue at the bottom of the diamond seed crystal is completely carbonized, wherein the second preset temperature is greater than the first preset temperature.

3. The method for processing diamond seed crystal according to claim 1, characterized in that: The processing device (100) comprises a limiting mechanism (15) having a limiting hole (151), and the gluing and curing comprises: Placing the limiting mechanism (15) on the processing platform (12), and placing the diamond seed crystal in the limiting hole (151); Heating the diamond seed crystal and the processing platform (12) to solidify the glue between the diamond seed crystal and the processing platform (12); The limiting mechanism (15) is removed from the processing platform (12).

4. The method for processing diamond seed crystal according to claim 3, characterized in that: A plurality of the limiting holes (151) are provided, and a diamond seed crystal is placed in each of the limiting holes (151).

5. The method for processing diamond seed crystal according to claim 3, characterized in that: A plurality of the limiting holes (151) are provided, and at least one of the limiting holes (151) is not provided with a diamond seed crystal.

6. The method for processing diamond seed crystal according to claim 1 or 3, characterized in that: The heating and curing time in the adhesive bonding and curing process is shorter than the heating and curing time in the tableting and curing process, and the heating and curing temperature in the adhesive bonding and curing process is lower than the heating and curing temperature in the tableting and curing process.

7. The method for processing diamond seed crystal according to claim 1, characterized in that: The step of performing glue coating on the processing platform (12) and the diamond seed crystal by the glue coating machine (11) comprises: Placing the processing platform (12) on the platform of the glue-splitting machine (11), and extracting the air between the processing platform (12) and the platform of the glue-splitting machine (11), so that the processing platform (12) and the platform of the glue-splitting machine (11) are tightly combined; Turning on the glue leveling machine (11) and dripping glue onto the processing platform (12) in batches until the glue leveling on the processing platform (12) is completed; Placing a diamond seed crystal on the platform of the gluing machine (11), and removing the air between the diamond seed crystal and the platform of the gluing machine (11), so that the diamond seed crystal and the platform of the gluing machine (11) are tightly combined; The glue leveling machine (11) is turned on and glue is dripped onto the diamond seed crystal in batches until the glue leveling of the diamond seed crystal is completed.

8. The method for processing diamond seed crystal according to claim 1, characterized in that: The sheet pressing mechanism (13) is used to press out excess glue and bubbles between the diamond seed crystal and the processing platform (12).

9. The method for processing diamond seed crystal according to claim 8, characterized in that: The processing device (100) comprises a weight-increasing mechanism (16), and the weight-increasing mechanism (16) is used to increase the pressing force of the tablet pressing mechanism (13) on the diamond seed crystal; Placing the pressing mechanism (13) on the diamond seed crystal so that the pressing force acts on the diamond seed crystal comprises: placing the tablet pressing mechanism (13) on the diamond seed crystal; The weight-increasing mechanism (16) is placed on the tablet pressing mechanism (13) to press out excess glue and bubbles between the diamond seed crystal and the processing platform (12).

10. A diamond seed crystal processing device (100), characterized in that: The processing device (100) is capable of executing the method for processing a diamond seed crystal according to any one of claims 1 to 9.

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