Current sensor and integrated circuit device thereof

Abstract

The invention discloses a current sensor and an integrated circuit device thereof. The integrated circuit device comprises a substrate which is provided with a first surface and a second surface which are oppositely arranged; the first-type lead frame is used for forming a first current path on one side of the first surface of the substrate; the plurality of magnetic field transducers are arranged on the first surface of the substrate or on one side of the first surface; wherein a first surrounding part and a second surrounding part which are used for surrounding two different magnetic field transducers are formed on the first lead frame; the first surrounding part is provided with a first opening facing the first direction; the second surrounding part is provided with a second opening facing a second direction different from the first direction. The current sensor and the integrated circuit device thereof have the beneficial effects that the current sensor and the integrated circuit device thereof are provided, and the detection precision is improved by improving the number and arrangement of the magnetic field transducers and improving the surrounding structures of the magnetic field transducers through the lead frame.

Description

[0001] This application is a divisional application of a patent application with application number 202111669127.9, application date December 31, 2021, and invention name “Current sensor and its integrated circuit device”. Technical Field

[0002] The present application relates to a current sensor and an integrated circuit device thereof. Background Art

[0003] As is known in the art, a conventional current sensor uses a magnetic field transducer (such as a Hall effect transducer or a magnetoresistive transducer) located near an electrical conductor. The magnitude of the output signal generated by the magnetic field transducer is proportional to the induced magnetic field of the current flowing through the electrical conductor.

[0004] Some typical Hall effect current sensors include a gapped annular flux concentrator, with the Hall effect element disposed in the gap of the annular core. The Hall effect device and the annular core are assembled into a housing, which is mounted on a printed circuit board. During use, a single-path conductor, such as a wire, passes through the center of the annular core. Such devices tend to be disadvantageously large in size, both in terms of height and in terms of circuit board area.

[0005] Other Hall effect current sensors include a Hall effect element mounted on a dielectric material (e.g., a circuit board). One such current sensor is disclosed in European Patent Application No. EP0867725. Still other Hall effect current sensors include a Hall effect element mounted on a substrate, such as a silicon substrate, such as European Patent Application No. EP1111693.

[0006] In some similar integrated circuit devices, a lead frame is used to surround the Hall element to achieve its function, such as the current sensor disclosed in the CN200480024296.5 patent application. However, in such a structure, when affected by an external magnetic field, the magnetic field of the lead frame is disturbed, thereby affecting the detection accuracy. Summary of the invention

[0007] The content of this application is used to introduce concepts in a brief form, which will be described in detail in the detailed implementation section below. The content of this application is not intended to identify the key features or essential features of the technical solution claimed for protection, nor is it intended to limit the scope of the technical solution claimed for protection.

[0008] Some embodiments of the present application propose an integrated circuit device, comprising: a substrate, formed with a first surface and a second surface arranged opposite to each other; a first type of lead structure, used to form a first current path on one side of the first surface of the substrate; and a plurality of magnetic field transducers, arranged on the first surface of the substrate or on one side of the first surface; wherein the first type of lead structure is formed with a first surrounding portion and a second surrounding portion for surrounding two different magnetic field transducers; the first surrounding portion has a first opening facing a first direction; and the second surrounding portion has a second opening facing a second direction different from the first direction.

[0009] Furthermore, the first direction and the second direction are relatively perpendicular directions.

[0010] Furthermore, the angle formed by the first direction and the second direction ranges from 5 degrees to 85 degrees.

[0011] Furthermore, the first opening includes at least one straight opening edge parallel to the first direction.

[0012] Furthermore, the first opening includes at least two straight opening edges arranged in parallel along the first direction.

[0013] Furthermore, the straight open edge extends to surround the magnetic field transducer.

[0014] Furthermore, the second opening includes at least one straight opening edge parallel to the second direction.

[0015] Furthermore, the second opening includes at least two straight opening edges arranged in parallel along the second direction.

[0016] Furthermore, the straight open edge extends to surround the magnetic field transducer.

[0017] As a second aspect of the present application, some embodiments of the present application provide a current sensor, which includes the aforementioned integrated circuit device.

[0018] The beneficial effect of the present application is that it provides a current sensor and an integrated circuit device thereof that improves detection accuracy by improving the number and arrangement of magnetic field transducers and the design of their surrounding structures through the improved lead frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting a part of this application are used to provide a further understanding of this application, so that other features, purposes and advantages of this application become more obvious. The illustrative embodiment drawings and their descriptions of this application are used to explain this application and do not constitute an improper limitation on this application.

[0020] In addition, throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and that the components and elements are not necessarily drawn to scale.

[0021] In the attached picture: Figure 1 is a schematic diagram of the three-dimensional structure of an integrated circuit device according to a first embodiment of the present application; Figure 2 yes Figure 1 A schematic diagram of the exploded structure of the integrated circuit device shown; Figure 3 yes Figure 2 A schematic diagram of a planar layout of an integrated circuit device shown; Figure 4 yes Figure 3 A partial enlarged view of the integrated circuit device shown; Figure 5 yes Figure 3 A schematic diagram of a portion of the wiring diagram of the integrated circuit device shown; Figure 6 is a schematic diagram of a planar layout of an integrated circuit device according to a second embodiment of the present application; Figure 7 is a schematic diagram of a plan layout of an integrated circuit device according to a third embodiment of the present application; Figure 8 is a schematic diagram of a plan layout of an integrated circuit device according to a fourth embodiment of the present application; Fig. 9 is a schematic diagram of a plan layout of an integrated circuit device according to a fifth embodiment of the present application; Fig.10 is a schematic diagram of a plan layout of an integrated circuit device according to a sixth embodiment of the present application; Fig.11 yes Fig.10 A partial enlarged view of the integrated circuit device shown; Fig.12 is a schematic diagram of a plan layout of an integrated circuit device according to a seventh embodiment of the present application; Fig.13 is a schematic diagram of a plan layout of an integrated circuit device according to an eighth embodiment of the present application; Fig.14 is a schematic diagram of a plan layout of an integrated circuit device according to a ninth embodiment of the present application; Fig.15 is a schematic diagram of the structure of a current sensor according to an embodiment of the present application. DETAILED DESCRIPTION

[0022] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided to provide a more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are only for exemplary purposes and are not intended to limit the scope of protection of the present disclosure.

[0023] It should also be noted that, for ease of description, only the parts related to the invention are shown in the drawings. In the absence of conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0024] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0025] It should be noted that the modifications of "one" and "plurality" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0026] The names of messages or information exchanged between multiple devices in the disclosed embodiments are only for illustrative purposes and are not intended to limit the scope of these messages or information.

[0027] The present disclosure will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0028] Reference Figures 1 to 3 As shown, the integrated circuit device 100 of the present application includes: a substrate 20, a first type lead frame 30, a second type lead frame 40 and a plurality of magnetic field transducers.

[0029] The substrate 20 is generally constructed as a plate structure in terms of shape. Figure 1 In the coordinate system, the X-axis and Y-axis directions have larger dimensions, and the Z-axis direction has smaller dimensions. More specifically, the substrate 20 is formed with a first surface 21 and a second surface 22 that are oppositely disposed. The first surface 21 and the second surface 22 of the substrate 20 are configured as substantially flat surfaces, but are not limited to standard planes. Certain channels or protrusions may also be formed on the first surface 21 or the second surface 22 due to the requirements of the integrated circuit construction.

[0030] The substrate 20 may be made of semiconductor materials such as silicon. As an optional embodiment, the substrate 20 may also be made of insulating materials.

[0031] The first type lead frame 30 and the second type lead frame 40 may be made of a conductive material, and they are used to guide current to form a current path or a conductor.

[0032] As a specific solution, the first type lead frame 30 is used to form a first current path on one side of the first surface 21 of the substrate 20 . Specifically, the first current path is used to form a corresponding magnetic field.

[0033] The first type lead frame 30 includes a first guide portion 31 , a second guide portion 32 , a first surrounding portion 33 and a second surrounding portion 34 .

[0034] Among them, the first drainage part 31 and the second drainage part 32 are structures connected to the external circuit, so that the first type lead frame 30 is connected to the external current loop. As an optional solution, the first drainage part 31 or the second drainage part 32 can be constructed to have a plurality of pins 41 structure to adapt to the corresponding external circuit.

[0035] Different from the first drainage portion 31 and the second drainage portion 32 which are mainly formed outside the range covered by the substrate 20, the first surrounding portion 33 and the second surrounding portion 34 are mainly formed within the range covered by the substrate 20. Here, "the range covered by the substrate 20" refers to the direction perpendicular to the substrate 20 (perpendicular to the approximate surface of the substrate 20, Figure 1 The projection of the substrate 20 is formed by projecting in the Z-axis direction (in the Z-axis direction) to form a range covered by the projection of the substrate 20. Similarly, if other structures (such as the first surrounding portion 33) fall within the projection of the substrate 20 in this direction when projected in this direction, then the structure is considered to be within the range covered by the substrate 20. On the contrary, if other structures (such as the first drainage portion 31) do not fall within the projection of the substrate 20 in this direction when projected in this direction, then the structure is considered to be outside the range covered by the substrate 20.

[0036] The first type lead frame 30 is bonded to the first surface 21 of the substrate 20 so that the first surface 21 is close to the first type lead frame 30, and the second surface 22 is far away from the first type lead frame 30. The first surface 21 of the substrate 20 has a magnetic field transducer, or a magnetic field transducer is arranged on one side of the first surface 21. As an optional embodiment, the magnetic field transducer can be a Hall effect element. The magnetic field transducer is diffused to the first surface 21, or is arranged on the first surface 21 so that the magnetic field transducer is close to the first type lead frame 30.

[0037] The substrate 20 is separated from the first type lead frame 30 and the second type lead frame by an insulator 14 , which can be arranged in various ways.

[0038] Reference Figures 1 to 3As shown, the areas surrounded by the first surrounding portion 33 and the second surrounding portion 34 are respectively provided with a magnetic field transducer, and the magnetic field transducer is located at a predetermined position relative to the first surrounding portion 33 and the second surrounding portion 34. The magnetic field transducer surrounded by the first surrounding portion 33 can be defined as a first magnetic field transducer 51, and the magnetic field transducer surrounded by the second surrounding portion 34 can be defined as a second magnetic field transducer 52.

[0039] The first surrounding portion 33 has a first opening 331 facing the first direction, and the opening edge of the first opening 331 extends to a position surrounding the first magnetic field transducer 51. The second surrounding portion 34 has a second opening 341 facing the second direction, and the opening edge of the second opening 341 extends to a position surrounding the second magnetic field transducer 52. The first direction is different from the second direction, so that the first magnetic field generated by the current flowing through the first surrounding portion 33 and the second magnetic field generated by the current flowing through the second surrounding portion 34 are opposite in direction, and the directions of the first magnetic field and the second magnetic field are substantially aligned with the maximum response axis of the magnetic field transducer, that is, at a predetermined position, the directions of the first magnetic field and the second magnetic field are along the Z-axis direction.

[0040] When an interfering magnetic field exists, the magnetic field strength passing through the first magnetic field transducer 51 and the second magnetic field transducer 52 will change according to the direction of the interfering magnetic field. For example, when the direction of the interfering magnetic field is the same as the current magnetic field passing through the first magnetic field transducer 51, the total magnetic field strength passing through the first magnetic field transducer 51 increases, and the total magnetic field strength passing through the second magnetic field transducer 52 will also increase by the same amount, resulting in the output signal of the first magnetic field transducer 51 and the output signal of the second magnetic field transducer 52 being equally large. Subtracting the two can offset the influence of the interfering magnetic field, thereby removing the interference of the interfering magnetic field on the current detection result and improving the sensitivity.

[0041] The second type lead frame 40 is used to receive the output signal of the magnetic field transducer, and specifically, to detect the current change on the first type lead frame 30 .

[0042] Reference Figure 5 As shown, the second type lead frame 40 has a conditioning chip, and the conditioning chip and the magnetic field transducer are connected through the first type bonding wire 11 and the second type bonding wire 12; the first type bonding wire 11 is used to input current to the magnetic field transducer, and the second type bonding wire is used to output the Hall voltage of the magnetic field transducer. The second type lead frame 40 also has a plurality of pins 41, and the plurality of pins 41 are respectively connected to the conditioning chip through the third type bonding wire 13.

[0043] As an optional solution, the first direction and the second direction can be constructed in the following manner: project the first type lead frame 30 and the magnetic field transducer into the XY coordinate system, and respectively make two farthest boundary points that can represent the openings of the first opening 331 and the second opening 341, and use the direction of the reference line passing through the midpoint of the line segment connecting the two farthest boundary points and the center point of the corresponding magnetic field transducer to represent the direction of the opening. The reference line representing the first direction is L1, and the reference line representing the second direction is M1. The angle α1 between L1 and M1 indicates the angle between the first direction and the second direction. The center point of the magnetic field transducer can be the intersection of the diagonal lines of the magnetic field transducer, or the center of the largest imaginary circle that can maximally surround the magnetic field transducer ("maximum surround" means that the area occupied by the second magnetic field transducer 52 in the imaginary circle is greater than half of the imaginary circle area).

[0044] Taking the second opening 341 as an example, the two farthest boundary points at the opening of the second opening 341 are A1 and B1 respectively, the center point of the second magnetic field transducer 52 is O2, and the straight line passing through the midpoint of the line segment A1B1 and O2 is used as the reference line M1. The same method is used to make the reference line L1 passing through the center point O1 of the first magnetic field transducer 51, and the angle between L1 and M1 is α1.

[0045] As a further solution, boundary lines are drawn between the center point of the magnetic field transducer and the two farthest boundary points, and the direction of the opening is indicated by the direction of the angle bisector of the two boundary lines corresponding to the center point of the same magnetic field transducer. The reference line indicating the first direction is L2, the reference line indicating the second direction is M2, and the angle α2 between L2 and M2 indicates the angle between the first direction and the second direction.

[0046] Taking the second opening 341 as an example, the center point O2 of the second magnetic field transducer 52 is connected to the farthest boundary points A1 and B1 to obtain boundary lines O2A1 and O2B1, and a straight line passing through the center point O2 and coinciding with the angle bisectors of the boundary lines O2A1 and O2B1 is used as the reference line M2. The same method is used to make the reference line L2 passing through the center point O1 of the first magnetic field transducer 51, and the angle between L2 and M2 is α2.

[0047] As another optional scheme, two nearest boundary points that can represent the first opening 331 and the second opening 341 are respectively made, and the direction of the opening is represented by the direction of a reference line passing through the midpoint of the line segment connecting the two nearest boundary points and the center point of the corresponding magnetic field transducer. The reference line representing the first direction is L3, and the reference line representing the second direction is M3. The angle α3 between L3 and M3 indicates the angle between the first direction and the second direction.

[0048] Taking the second opening 341 as an example, the two nearest boundary points of the second opening 341 are C1 and D1 respectively, the center point of the second magnetic field transducer 52 is O2, and the straight line passing through the line segments C1D1 and O2 is used as the reference line M3. The same method is used to make the reference line L3 passing through the center point O1 of the first magnetic field transducer 51, and the angle between L3 and M3 is α3.

[0049] As a preferred solution, a straight line at the edge of the opening parallel to at least one straight line of the first opening 331 is used as a reference line L4 for representing the first direction, and a straight line at the edge of the opening parallel to at least one straight line of the second opening 341 is used as a reference line M4 for representing the second direction, and the angle α4 between L3 and M3 indicates the angle between the first direction and the second direction.

[0050] Reference Figure 3 and Figure 4 As shown in the figure, as a first embodiment of the integrated circuit device 100, the two opening edges of the first opening 331 are symmetrically arranged, that is, L1 to L4 overlap, L1 and M1 form an angle α1, L1 and M2 form an angle α2, L1 and M3 form an angle α1, and L1 and M4 form an angle α2. The values ​​of α1, α2 and α3 range from 5 degrees to 85 degrees, and the value of α4 is 90 degrees, that is, the angle between the first direction and the second direction is 5 degrees to 85 degrees or 90 degrees.

[0051] Reference Figure 6 As shown in FIG. 1 , as a second embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the first embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees.

[0052] Reference Figure 7 As shown in FIG. 1 , as a third embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the first embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees.

[0053] Reference Figure 8 As shown in FIG. 4 , as the fourth embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the first embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees.

[0054] Reference Fig. 9 As shown in FIG. 5 , as a fifth embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the first embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees.

[0055] Reference Fig.10 and Fig.11As shown in the figure, as the sixth embodiment of the integrated circuit device 100, the opening edge of the first opening 331 in this embodiment is not completely symmetrically arranged, the two farthest boundary points at the opening of the first opening 331 are A2 and B2 respectively, the center point of the second magnetic field transducer 52 is O2, and the straight line passing through the midpoint of the line segment A2B2 and O2 is used as the reference line L1. The center point O2 of the second magnetic field transducer 52 and the farthest boundary points A2 and B2 are connected respectively to obtain boundary lines O2A2 and O2B2, and the straight line passing through the center point O2 and coinciding with the angle bisectors of the boundary lines O2A2 and O2B2 is used as the reference line L2. The two farthest boundary points at the opening of the first opening 331 are C2 and D2 respectively, and the straight line passing through the midpoint of the line segment C2D2 and O2 is used as the reference line L3. The straight line of the opening edge parallel to at least one straight line of the first opening 331 is used as the reference line that can represent the first direction as L4. An angle α1 is formed between L1 and M1, an angle α2 is formed between L1 and M2, an angle α3 is formed between L1 and M3, and an angle α4 is formed between L1 and M4. The value range of α1, α2, α3 and α4 is 5 degrees to 85 degrees or 90 degrees, that is, the angle between the first direction and the second direction is 5 degrees to 85 degrees or 90 degrees.

[0056] Reference Fig.10 and Fig.11 As shown in FIG. 1 , as the seventh embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the sixth embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees or 90 degrees.

[0057] Reference Fig.12 As shown in FIG. 8 , as the eighth embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the sixth embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees or 90 degrees.

[0058] Reference Fig.13 As shown in FIG. 1 , as a ninth embodiment of the integrated circuit device 100 , the second direction in this embodiment is different from that in the sixth embodiment, and the angle between the first direction and the second direction is 5 degrees to 85 degrees or 90 degrees.

[0059] Reference Fig.14 As shown in FIG. 1 , as a ninth embodiment of the integrated circuit device 100 , the first direction may be configured to be parallel to the second direction. However, the structure of the integrated circuit device 100 arranged in this manner is too complicated.

[0060] The present application also provides a current sensor, which includes the aforementioned integrated circuit device 100 .

[0061] The above descriptions are only some preferred embodiments of the present disclosure and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the embodiments of the present disclosure is not limited to the technical solutions formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the above-mentioned inventive concept. For example, the above-mentioned features are replaced with the technical features with similar functions disclosed in the embodiments of the present disclosure (but not limited to) and the technical solutions formed.

Claims

1. An integrated circuit device, characterized in that: The integrated circuit device comprises: A substrate having a first surface and a second surface opposite to each other; A first type lead frame for forming a first current path on one side of the first surface of the substrate; and A plurality of magnetic field transducers are disposed on the first surface of the substrate or on one side of the first surface; The first type of lead frame is formed with a first surrounding portion and a second surrounding portion for partially surrounding two different magnetic field transducers; the first surrounding portion has a first opening facing a first direction; the second surrounding portion has a second opening facing a second direction different from the first direction; The first opening includes at least one straight opening edge parallel to the first direction; The first direction and the second direction are relatively perpendicular directions.

2. The integrated circuit device according to claim 1, wherein: The angle formed by the first direction and the second direction ranges from 5 degrees to 85 degrees.

3. The integrated circuit device according to claim 1, wherein: The first opening includes at least two straight opening edges arranged in parallel along the first direction.

4. The integrated circuit device according to claim 1 or 3, characterized in that: The straight open edge extends to surround the magnetic field transducer.

5. The integrated circuit device according to claim 1, wherein: The second opening includes at least one straight opening edge parallel to the second direction.

6. The integrated circuit device according to claim 1, wherein: The second opening includes at least two straight opening edges arranged in parallel along the second direction.

7. The integrated circuit device according to claim 5 or 6, characterized in that: The straight open edge extends to surround the magnetic field transducer.

8. A current sensor, characterized in that: The current sensor comprises the integrated circuit device according to any one of claims 1 to 7.

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