Microwave power detection chip based on gallium arsenide compound semiconductor

Abstract

A gallium arsenide compound semiconductor-based microwave power detection chip disclosed by the present invention comprises a circuit board and a power detection module, the top of the circuit board is provided with a chip body, and the chip body is internally provided with the power detection module, a signal conditioning module and a digital processing module in sequence. The two sides of the chip body are fixedly connected with fixing blocks. According to the microwave power detection chip based on the gallium arsenide compound semiconductor, positioning grooves in fixing blocks on the two sides of a chip body are in butt joint with a connecting block b at the top of a connecting block a, and a moving block is in contact with a wedge-shaped surface of a clamping block on one side of the connecting block b during butt joint, so that the moving block moves on the outer side of a sliding rod; when the chip body is installed, the sliding rod extrudes the spring in the moving block, when the clamping groove in the moving block makes contact with the clamping block, the spring resets, the moving block is pushed to move to be clamped with the clamping block, and installation of the chip body is completed.

Description

Technical Field

[0001] The present invention relates to the technical field of detection chips, and in particular to a microwave power detection chip based on gallium arsenide compound semiconductors. Background Art

[0002] As an important III-V compound semiconductor material, GaAs plays a vital role in modern electronics and optoelectronics due to its superior electrical and optoelectronic properties. GaAs-based semiconductor devices demonstrate exceptional performance, particularly in the microwave and millimeter-wave frequency bands, making them ideal for high-frequency, high-power applications. These properties combine to make GaAs an ideal material for microwave power detection chips, whose core task is to accurately measure signal power in the microwave frequency band.

[0003] A microwave power detection chip is an integrated circuit used to detect microwave signal power. When installing existing microwave power detection chips on a circuit board, the chip needs to be placed on the slot of the circuit board, ensuring that the pins of the chip are aligned with the pins of the slot, and then the chip is gently pressed until it is fully inserted into the slot. This way of installing the chip makes it difficult to align the pins of the chip and the circuit board, takes a long time to position during installation, and the fixing effect is poor, which makes it easy for the chip to loosen. Summary of the Invention

[0004] The object of the present invention is to provide a microwave power detection chip based on gallium arsenide compound semiconductor to solve the problem of inconvenience in installation of the existing microwave power detection chip mentioned in the above background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a microwave power detection chip based on gallium arsenide compound semiconductor, comprising: a circuit board and a power detection module, a chip body is arranged on top of the circuit board, and a power detection module, a signal conditioning module and a digital processing module are sequentially installed inside the chip body. Both sides of the chip body are fixedly connected with fixed blocks, the interior of the fixed blocks is plugged with a connecting block a, the top of the connecting block a is fixedly connected with a connecting block b, the outer side of the connecting block b is plugged with a moving block, and one side of the moving block is fixedly connected with a card block.

[0006] Preferably, a conical groove matching the connecting block a is formed at the bottom of the fixing block, and the outer side of the connecting block a is cylindrical.

[0007] Preferably, the connecting block b has a rectangular shape, a moving groove is provided inside the moving block, and the moving groove slides with the connecting block b.

[0008] Preferably, a clamping slot is provided on one side of the movable slot, and the clamping slot is opened inside the movable block, the clamping block is engaged with the clamping slot, and a sliding rod is slidably connected inside the movable block.

[0009] Preferably, one end of the slide rod is fixed to the chip body, the other end of the slide rod is fixedly connected to a spring, and one end of the spring is fixed to the moving block.

[0010] Preferably, there are two groups of moving blocks, and the two groups of moving blocks are symmetrically distributed about the transverse center line of the chip body. The shape of the card block is wedge-shaped, and the output end of the power detection module is electrically connected to the input end of the signal conditioning module.

[0011] Preferably, the output end of the signal conditioning module is electrically connected to the digital processing module, and multiple groups of pins are fixedly connected to both sides of the chip body, and the multiple groups of pins are equidistantly distributed on both sides of the chip body.

[0012] Preferably, a gallium arsenide compound coating is provided inside the chip body, a composite nano coating is connected to the bottom of the chip body, and an antistatic coating is connected to the top of the chip body.

[0013] Preferably, the material of the composite nano-coating is modified graphene, and the material of the antistatic coating is a composite conductive coating composed of nano-carbon black and alkyd resin.

[0014] Preferably, a plurality of groups of heat conducting plates are fixedly connected to the top of the chip body, a plurality of groups of heat sinks are connected to the top of the heat conducting plates, and the plurality of groups of heat sinks and the heat conducting plates are equidistantly distributed.

[0015] Compared with the existing technology, the microwave power detection chip based on gallium arsenide compound semiconductor has the following advantages: 1. When installing the microwave power detection chip based on gallium arsenide compound semiconductor on a circuit board, the positioning grooves in the fixed blocks on both sides of the chip body are docked with the connecting block b on the top of the connecting block a. During docking, the moving block will contact the wedge-shaped surface of the card block on one side of the connecting block b, causing the moving block to move outside the slide bar. The slide bar will squeeze the spring inside the moving block. When the card slot inside the moving block contacts the card block, the spring will reset and push the moving block to move and engage with the card block, completing the installation of the chip body. In this way, the above operation can facilitate the rapid and stable installation of the microwave power detection chip on the circuit board.

[0016] 2. This microwave power detection chip based on gallium arsenide compound semiconductors incorporates a gallium arsenide compound coating within the chip body. The low dielectric constant of gallium arsenide reduces its junction capacitance, facilitating high-frequency applications of the chip body. Furthermore, the wide bandgap of gallium arsenide makes the chip body more stable at high temperatures. The composite nanocoating within the chip body, made of modified graphene, protects the chip body and improves chip performance. The antistatic coating, composed of nano-carbon black and alkyd resin, prevents static damage to the chip body, extending the chip body's service life. These operations can enhance the performance of the microwave power detection chip.

[0017] 3. In order to quickly process the heat generated internally, the microwave power detection chip based on gallium arsenide compound semiconductor is equipped with multiple sets of heat conducting plates on the top of the chip body. The heat conducting plates can absorb the heat in the chip body and input the heat to the multiple sets of heat sinks to dissipate the heat. In this way, the above operation can facilitate the heat dissipation of the microwave power detection chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a three-dimensional schematic diagram of the present invention; Figure 2 Schematic diagram of a three-dimensional cross-section of the chip body of the present invention; Figure 3 This is a three-dimensional cross-sectional schematic diagram of the fixing block of the present invention; Figure 4 It is a three-dimensional cross-sectional schematic diagram of the moving block of the present invention; Figure 5 It is a three-dimensional schematic diagram of the fixing block of the present invention.

[0019] In the figure: 1. Circuit board; 2. Chip body; 3. Power detection module; 4. Signal conditioning module; 5. Digital processing module; 6. Pin; 7. Fixed block; 8. Connecting block a; 9. Positioning slot; 10. Connecting block b; 11. Moving block; 12. Moving slot; 13. Card block; 14. Card slot; 15. Sliding rod; 16. Spring; 17. Gallium arsenide compound coating; 18. Composite nano-coating; 19. Antistatic coating; 20. Thermal conductive sheet; 21. Heat sink. DETAILED DESCRIPTION

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0021] See also Figure 1-Figure 5The present invention provides a technical solution: a microwave power detection chip based on gallium arsenide compound semiconductor, comprising: a circuit board 1 and a power detection module 3. A chip body 2 is provided on top of the circuit board 1. The power detection module 3, a signal conditioning module 4, and a digital processing module 5 are sequentially installed inside the chip body 2. Both sides of the chip body 2 are fixedly connected with fixed blocks 7, the interior of the fixed block 7 is plugged with a connecting block a8, the top of the connecting block a8 is fixedly connected with a connecting block b10, the outer side of the connecting block b10 is plugged with a moving block 11, and one side of the moving block 11 is fixedly connected with a clamping block 13; The bottom of the fixed block 7 is provided with a conical groove that matches the connecting block a8, and the outer side of the connecting block a8 is cylindrical; the outer shape of the connecting block b10 is rectangular, and a moving groove 12 is provided inside the movable block 11, and the movable groove 12 slides with the connecting block b10; a card slot 14 is provided on one side of the movable groove 12, and the card slot 14 is provided inside the movable block 11, and the card block 13 is engaged with the card slot 14, and the interior of the movable block 11 is slidably connected to a slide rod 15; one end of the slide rod 15 is fixed to the chip body 2, and the other end of the slide rod 15 is fixedly connected to a spring 16, and one end of the spring 16 is fixed to the movable block 11 ; There are two groups of moving blocks 11, and the two groups of moving blocks 11 are symmetrically distributed about the transverse center line of the chip body 2. The shape of the card block 13 is wedge-shaped, and the output end of the power detection module 3 is electrically connected to the input end of the signal conditioning module 4; the output end of the signal conditioning module 4 is electrically connected to the digital processing module 5. Both sides of the chip body 2 are fixedly connected with multiple groups of pins 6, and the multiple groups of pins 6 are equidistantly distributed on both sides of the chip body 2. A sliding groove matching the slide rod 15 is opened inside the moving block 11. The slide rod 15 and the moving block 11 constitute a sliding structure, and the card block 13 and the moving block 11 constitute a locking structure.

[0022] In a specific implementation, the microwave power detection chip based on gallium arsenide compound semiconductor is installed on the circuit board 1 by docking the positioning grooves 9 in the fixed blocks 7 on both sides of the chip body 2 with the connecting block b10 on the top of the connecting block a8. During docking, the moving block 11 will contact the wedge surface of the card block 13 on one side of the connecting block b10, so that the moving block 11 moves on the outside of the slide bar 15. The slide bar 15 will squeeze the spring 16 inside the moving block 11. When the card slot 14 inside the moving block 11 contacts the card block 13, the spring 16 will reset and push the moving block 11 to move and engage with the card block 13, completing the chip. The installation of the main body 2, due to the cooperation of the two groups of fixing blocks 7 and the connecting block a8, the pins 6 on both sides of the chip body 2 will be aligned with the slots on the circuit board 1, thereby facilitating the connection between the two, and after the moving block 11 is engaged with the card block 13, the stability of the installation of the chip body 2 can be guaranteed. When the chip body 2 needs to be removed, it is moved by pressing the two groups of moving blocks 11. When the moving block 11 moves, it will squeeze the spring 16. When the moving block 11 is disengaged from the card block 13, the movable chip body 2 is separated from the circuit board 1. In this way, the above operation can facilitate the quick and stable installation of the microwave power detection chip on the circuit board 1.

[0023] See also Figure 1-Figure 2 A gallium arsenide compound coating 17 is provided inside the chip body 2, a composite nano coating 18 is connected to the bottom of the chip body 2, and an antistatic coating 19 is connected to the top of the chip body 2; the composite nano coating 18 is made of modified graphene, and the antistatic coating 19 is made of a composite conductive coating composed of nano carbon black and alkyd resin.

[0024] In specific implementation, the microwave power detection chip based on gallium arsenide compound semiconductor sets a gallium arsenide compound coating 17 inside the chip body 2. The small dielectric constant of gallium arsenide makes its junction capacitance smaller, which is beneficial to the high-frequency application of the chip body 2. In addition, the band gap width of gallium arsenide is large, which can make the chip body 2 more stable at high temperatures. The composite nano-coating 18 in the chip body 2 is made of modified graphene, which can protect the chip body 2 and improve the chip performance. The anti-static coating 19 composed of nano-carbon black and alkyd resin can prevent static electricity from damaging the chip body 2 and extend the service life of the chip body 2. In this way, the performance of the microwave power detection chip can be improved through the above operations.

[0025] See also Figure 1-Figure 2 The top of the chip body 2 is fixedly connected to multiple groups of heat conducting plates 20 , and the top of the heat conducting plates 20 is connected to multiple groups of heat sinks 21 , which are equidistantly distributed with the heat conducting plates 20 .

[0026] In a specific implementation, in order to quickly process the heat generated inside, the microwave power detection chip based on gallium arsenide compound semiconductor is provided with multiple groups of heat conducting plates 20 on the top of the chip body 2. The heat conducting plates 20 can absorb the heat in the chip body 2 and input the heat to the multiple groups of heat sinks 21 to dissipate the heat. The multiple groups of heat sinks 21 and the heat conducting plates 20 form a grid shape, which can quickly and efficiently extract the heat from the chip body 2 and prevent the internal high temperature from damaging the chip body 2. In this way, the above operation can facilitate the heat dissipation treatment of the microwave power detection chip.

[0027] To sum up: when using a microwave power detection chip based on gallium arsenide compound semiconductor, first, the power detection module 3 in the chip body 2 can accurately detect the power of the microwave signal, and then the detected signal is amplified, filtered, and processed by the signal conditioning module 4 to improve the quality of the signal. Finally, the analog signal is converted into a digital signal through the digital processing module 5, and data processing and analysis are performed. The contents not described in detail in this specification belong to the existing technology known to professional and technical personnel in this field.

[0028] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A microwave power detection chip based on gallium arsenide compound semiconductor, comprising: A circuit board (1) and a power detection module (3), wherein a chip body (2) is arranged on the top of the circuit board (1), and a power detection module (3), a signal conditioning module (4) and a digital processing module (5) are sequentially installed inside the chip body (2), characterized in that: Both sides of the chip body (2) are fixedly connected with fixed blocks (7), the interior of the fixed block (7) is plugged with a connecting block a (8), the top of the connecting block a (8) is fixedly connected with a connecting block b (10), the outer side of the connecting block b (10) is plugged with a moving block (11), and one side of the moving block (11) is fixedly connected with a clamping block (13).

2. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 1, characterized in that: The bottom of the fixing block (7) is provided with a conical groove matching the connecting block a (8), and the outer side of the connecting block a (8) is cylindrical.

3. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 1, characterized in that: The connecting block b (10) has a rectangular shape, and a moving groove (12) is provided inside the moving block (11), and the moving groove (12) slides with the connecting block b (10).

4. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 3, characterized in that: A clamping slot (14) is provided on one side of the movable slot (12), and the clamping slot (14) is opened inside the movable block (11). The clamping block (13) is engaged with the clamping slot (14), and a sliding rod (15) is slidably connected inside the movable block (11).

5. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 4, characterized in that: One end of the slide bar (15) is fixed to the chip body (2), the other end of the slide bar (15) is fixedly connected to a spring (16), and one end of the spring (16) is fixed to the moving block (11).

6. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 1, characterized in that: The moving blocks (11) are provided in two groups, and the two groups of moving blocks (11) are symmetrically distributed about the transverse center line of the chip body (2); the card block (13) has a wedge-shaped appearance; and the output end of the power detection module (3) is electrically connected to the input end of the signal conditioning module (4).

7. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 1, characterized in that: The output end of the signal conditioning module (4) is electrically connected to the digital processing module (5), and a plurality of groups of pins (6) are fixedly connected to both sides of the chip body (2), and the plurality of groups of pins (6) are equidistantly distributed on both sides of the chip body (2).

8. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 1, characterized in that: A gallium arsenide compound coating (17) is provided inside the chip body (2), a composite nano coating (18) is connected to the bottom of the chip body (2), and an antistatic coating (19) is connected to the top of the chip body (2).

9. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 8, characterized in that: The material of the composite nano coating (18) is modified graphene, and the material of the antistatic coating (19) is a composite conductive coating composed of nano carbon black and alkyd resin.

10. The microwave power detection chip based on gallium arsenide compound semiconductor according to claim 1, characterized in that: A plurality of groups of heat conducting sheets (20) are fixedly connected to the top of the chip body (2), a plurality of groups of heat sinks (21) are connected to the top of the heat conducting sheets (20), and the plurality of groups of heat sinks (21) and the heat conducting sheets (20) are equidistantly distributed.

Images