Plasma device and plasma deposition apparatus

Abstract

The application provides a kind of plasma device and plasma deposition equipment.The device includes: plasma reaction cavity, including upper electrode plate and lower electrode plate, upper and lower electrode plate has voltage difference to generate plasma;And magnetic material includes: the first magnetic material is arranged on the first edge region of upper electrode plate in the length direction along the first side direction of upper electrode plate and is arranged under the first edge region of lower electrode plate in the length direction along the first side direction of lower electrode plate.The first magnetic material is thus arranged on the first edge region of upper electrode plate in the length direction along the first side direction of upper electrode plate and is arranged under the first edge region of lower electrode plate in the length direction along the first side direction of lower electrode plate, to build non-uniform magnetic field in plasma reaction cavity by magnetic material, to change the plasma density at the edge of plasma reaction cavity, so that the plasma peak that appears at the edge of plasma reaction cavity can be reduced when large-area CCP discharge, make the distribution of plasma in the whole plasma reaction cavity more uniform.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of plasma processing, and more particularly, to a plasma device and a plasma deposition apparatus. BACKGROUND

[0002] Plasma processing technology is a key technology widely used in the semiconductor, photovoltaic and other industries. Among them, plasma enhanced chemical vapor deposition (PECVD) and plasma enhanced atomic layer deposition (PEALD) are two common plasma processing technologies, which usually need to carry out large-area capacitive coupling plasma source (CCP) radio frequency discharge in the process. This discharge mode can effectively improve the production efficiency when processing larger area battery pieces or related film plating needs. However, in the process of large-area CCP discharge, due to factors such as edge effect, standing wave effect and skin effect, plasma peaks will appear at the edge of the chamber, thereby affecting the plasma uniformity of the whole plate, and further affecting the film plating effect of the whole plate.

[0003] In order to solve this problem, currently the plasma uniformity in the chamber is mainly improved by optimizing the discharge parameters, such as reducing the discharge power and working pressure, increasing the discharge electrode spacing and the like. However, although these means can enhance the diffusion of the plasma and improve the uniformity of the plasma distribution, they will also change the overall density of the plasma in the chamber, thereby affecting the process operation and reducing the industrial production efficiency. In addition, some schemes change the design of the electrode, for example, increase the dielectric layer between the electrodes or make the power electrode parallel to the capacitor, to suppress the standing wave effect and thereby improve the distribution of the plasma, but these schemes often require complex control systems and precise operations, which are difficult to realize in actual production. SUMMARY

[0004] In order to at least partially overcome the problems existing in the related art, the embodiments of the present application provide a plasma device, comprising: a plasma reaction chamber, the plasma reaction chamber comprising an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate having a voltage difference to generate plasma, the upper electrode plate and the lower electrode plate each having at least one side edge; and a magnetic material, comprising: a first magnetic material disposed above a first edge region of the upper electrode plate in a length direction along a first side edge direction of the upper electrode plate and below a first edge region of the lower electrode plate in a length direction along a first side edge direction of the lower electrode plate, wherein the size of the first magnetic material in the length direction is greater than the size in the width direction, the first edge region of the upper electrode plate is a region of the upper electrode plate close to the first side edge of the upper electrode plate, and the first edge region of the lower electrode plate is a region of the lower electrode plate close to the first side edge of the lower electrode plate.

[0005] Further, the upper electrode plate and the lower electrode plate are both quadrilateral electrode plates, and the magnetic material further comprises: a first magnetic material arranged on the second edge region of the upper electrode plate in the length direction along the second side direction of the upper electrode plate and arranged on the second edge region of the lower electrode plate in the length direction along the second side direction of the lower electrode plate, wherein the first magnetic material is a strip-shaped magnetic material, the second edge region of the upper electrode plate is a region of the upper electrode plate close to the second side of the upper electrode plate, and the second edge region of the lower electrode plate is a region of the lower electrode plate close to the second side of the lower electrode plate.

[0006] Further, the magnetic material further comprises: a first magnetic material arranged on the third and fourth edge regions of the upper electrode plate in the length direction along the third and fourth side directions of the upper electrode plate and arranged on the third and fourth edge regions of the lower electrode plate in the length direction along the third and fourth side directions of the lower electrode plate, respectively, wherein the third and fourth edge regions of the upper electrode plate are regions of the upper electrode plate close to the third and fourth sides of the upper electrode plate, respectively, and the third and fourth edge regions of the lower electrode plate are regions of the lower electrode plate close to the third and fourth sides of the lower electrode plate, respectively.

[0007] Further, one side of the first magnetic material arranged on the upper electrode plate and facing the upper electrode plate is a first pole, and the other side of the first magnetic material arranged on the upper electrode plate and facing away from the upper electrode plate is a second pole; one side of the first magnetic material arranged on the lower electrode plate and facing away from the lower electrode plate is a first pole, and the other side of the first magnetic material arranged on the lower electrode plate and facing the lower electrode plate is a second pole.

[0008] Further, the distance between the first magnetic material arranged on the upper electrode plate and the upper electrode plate is 1-30 mm, and the distance between the first magnetic material arranged on the lower electrode plate and the lower electrode plate is 1-30 mm; the distance between the first magnetic material and the first, second, third or fourth side adjacent to the first magnetic material is 2-40 mm.

[0009] Further, the distances between the four sides of the upper electrode plate or the lower electrode plate and the center position of the upper electrode plate or the lower electrode plate are the same or different, wherein the farther the side from the center position of the upper electrode plate or the lower electrode plate, the greater the magnetic flux of the first magnetic material corresponding to the side.

[0010] Further, the magnetic material further comprises a second magnetic material arranged on the first edge region of the upper electrode plate in the length direction along the first side direction of the upper electrode plate and arranged on the first edge region of the lower electrode plate in the length direction along the first side direction of the lower electrode plate, respectively, the second magnetic material is closer to the center of the upper electrode plate or the lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

[0011] Further, the first electrode plate and the second electrode plate are rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plates which are not adjacent, the magnetic material further comprises a second magnetic material arranged on the first edge region and the second edge region of the upper electrode plate in the length direction along the first side direction and the second side direction of the upper electrode plate and arranged on the first edge region and the second edge region of the lower electrode plate in the length direction along the first side direction and the second side direction of the lower electrode plate, respectively, and a third magnetic material arranged on the first edge region and the second edge region of the upper electrode plate in the length direction along the first side direction and the second side direction of the upper electrode plate and arranged on the first edge region and the second edge region of the lower electrode plate in the length direction along the first side direction and the second side direction of the lower electrode plate, respectively, the first magnetic material, the second magnetic material and the third magnetic material are all permanent magnets; in each of the first edge region and the second edge region, the second magnetic material is closer to the center of the upper electrode plate or the lower electrode plate than the first magnetic material, and the third magnetic material is closer to the center of the upper electrode plate or the lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is lower than the magnetic flux of the second magnetic material.

[0012] Further, in each of the first edge region and the second edge region, the side of the first magnetic material on the upper electrode plate facing the upper electrode plate is a first pole, and the side of the first magnetic material away from the upper electrode plate is a second pole, the side of the first magnetic material under the lower electrode plate away from the lower electrode plate is a first pole, and the side of the first magnetic material under the lower electrode plate facing the lower electrode plate is a second pole; the side of the second magnetic material on the upper electrode plate away from the upper electrode plate is a first pole, and the side of the second magnetic material on the upper electrode plate facing the upper electrode plate is a second pole, the side of the second magnetic material under the lower electrode plate facing the lower electrode plate is a first pole, and the side of the second magnetic material under the lower electrode plate away from the lower electrode plate is a second pole; the side of the third magnetic material facing the second magnetic material is a first pole, and the side of the third magnetic material away from the second magnetic material is a second pole.

[0013] Further, the distance between the first magnetic material and its adjacent first or second side edge is 2-40 mm, the distance between the first magnetic material and its adjacent second magnetic material is 5-50 mm, and the distance between the second magnetic material and its adjacent third magnetic material is 10-80 mm.

[0014] Further, in the direction along the third side edge of the rectangular electrode plate perpendicular to the first side edge, the cross-sectional area of the second magnetic material is the same as that of the first magnetic material, and the cross-sectional area of the third magnetic material is larger than that of the first magnetic material.

[0015] Further, each of the first, second, and third magnetic materials is composed of a plurality of small magnets arranged along the direction of the first or second side edge.

[0016] Further, the magnetic material further comprises: a side edge magnetic material arranged in the side edge region of the plasma reaction chamber in the direction along the first side edge, wherein the side edge region of the plasma reaction chamber is a region outside the first side surface of the plasma reaction chamber, and the first side surface is the side surface of the plasma reaction chamber between the upper electrode plate and the lower electrode plate and corresponding to the first side edge.

[0017] Further, the magnetic flux of the side edge magnetic material is higher than or equal to that of the first magnetic material.

[0018] Further, the first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plates which are not adjacent, and the magnetic material further comprises: first side magnetic materials arranged in the first side region and the second side region of the plasma reaction chamber in the length direction along the first side direction and the second side direction of the upper electrode plate respectively, and second side magnetic materials arranged in the third side region and the fourth side region of the plasma reaction chamber in the length direction along the first side direction and the second side direction of the lower electrode plate respectively, wherein the first side region is a region located outside the first side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate, the second side region is a region located outside the second side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate, the third side region is a region located outside the first side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the lower electrode plate, the fourth side region is a region located outside the second side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the lower electrode plate, the first side is a side of the plasma reaction chamber between the upper electrode plate and the lower electrode plate and corresponding to the first side, the second side is a side of the plasma reaction chamber between the upper electrode plate and the lower electrode plate and corresponding to the second side, and the first magnetic material, the first side magnetic material and the second side magnetic material are all permanent magnets.

[0019] Further, the magnetic flux of the first side magnetic material and the second side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

[0020] Further, one side of the first magnetic material located above the upper electrode plate and facing the upper electrode plate is a first pole, and the other side of the first magnetic material located above the upper electrode plate and facing away from the upper electrode plate is a second pole, one side of the first magnetic material located below the lower electrode plate and facing away from the lower electrode plate is a first pole, and the other side of the first magnetic material located below the lower electrode plate and facing the lower electrode plate is a second pole; one side of the first side magnetic material facing away from the plasma reaction chamber is a first pole, and the other side of the first side magnetic material facing the plasma reaction chamber is a second pole; one side of the second side magnetic material facing the plasma reaction chamber is a first pole, and the other side of the second side magnetic material facing away from the plasma reaction chamber is a second pole.

[0021] Further, the distance between the first magnetic material and the upper electrode plate or the lower electrode plate adjacent to the first magnetic material is 1-30 mm, the distance between the first side magnetic material and the second side magnetic material and the side of the plasma reaction chamber adjacent to the first side magnetic material and the second side magnetic material is 1-40 mm, the distance between the first magnetic material and the first side or the second side adjacent to the first magnetic material is 2-40 mm, and the distance between the first side magnetic material and the second side magnetic material and the first side or the second side adjacent to the first side magnetic material and the second side magnetic material is 2-40 mm.

[0022] Further, in the direction along the third side of the rectangular electrode plate perpendicular to the first side, the cross-sectional area of the first side magnetic material and the second side magnetic material is the same as the cross-sectional area of the first magnetic material.

[0023] Further, the magnetic material is an electromagnet for passing direct current or alternating current during plasma generation.

[0024] Further, the upper electrode plate and the lower electrode plate are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the distance between the upper electrode plate and the lower electrode plate is 10-100 mm.

[0025] The embodiment of the present application further provides a plasma deposition device, comprising the plasma device as described above, an outer cavity surrounding the plasma device, and a gas inlet arranged on the outer cavity and used for introducing a reaction gas.

[0026] According to the plasma device and the plasma deposition device of the embodiment of the present application, the magnetic material is arranged above the edge area of the upper electrode plate and below the edge area of the lower electrode plate of the plasma reaction chamber, and the magnetic material is used to construct a non-uniform magnetic field in the plasma reaction chamber, so as to change the plasma density at the edge of the plasma reaction chamber, thereby reducing the plasma peak at the edge of the plasma reaction chamber when the large-area CCP discharge is performed, and making the distribution of the plasma in the whole plasma reaction chamber more uniform. BRIEF DESCRIPTION OF DRAWINGS

[0027] The following drawings, which are part of the specification, illustrate embodiments of the present application and, together with the description, serve to explain the principles of the application.

[0028] Figure 1 A front view of a plasma device according to an embodiment of the present application is shown.

[0029] Figure 2 A front view of a plasma device according to a first embodiment of the present application is shown.

[0030] Figure 3 A front sectional view of another plasma device according to the first embodiment of the present application is shown. Figure 2 A top view and a bottom view of the plasma device shown.

[0031] Figure 4 A front sectional view of another plasma device according to the first embodiment of the present application is shown.

[0032] Figure 5 A top view and a bottom view of the plasma device shown. Figure 4 A top view and a bottom view of the plasma device shown.

[0033] Figure 6 A front sectional view of another plasma device according to the first embodiment of the present application is shown.

[0034] Figure 7 A top view and a bottom view of the plasma device shown. Figure 6 A top view and a bottom view of the plasma device shown.

[0035] Figure 8 A top view and a bottom view of the plasma device shown. Figure 6 A distribution diagram of equivalent electric field coils and magnetic induction lines when the magnetic material in the plasma device shown is an electromagnet.

[0036] Figure 9 A front sectional view of another plasma device according to the first embodiment of the present application is shown.

[0037] Figure 10 A top view and a bottom view of the plasma device shown. Figure 9 A top view and a bottom view of the plasma device shown.

[0038] Figure 11 A top view and a bottom view of the first magnetic material, the second magnetic material and the third magnetic material composed of a plurality of small magnets are shown.

[0039] Figure 12 A top view and a bottom view of the plasma device shown. Figure 9 A distribution diagram of magnetic field when the plasma device discharges in one specific application example of the plasma device shown.

[0040] Figure 13 A front sectional view of another plasma device according to the first embodiment of the present application is shown.

[0041] Figure 14 A top view and a bottom view of the plasma device shown. Figure 13 A top view and a bottom view of the plasma device shown.

[0042] Figure 15 A top view and a bottom view of the plasma device shown. Figure 13 A distribution diagram of magnetic field when the plasma device discharges in one specific application example of the plasma device shown.

[0043] Figure 16The electron density distribution in the plasma reaction chamber without magnetic material is shown.

[0044] Figure 17 The electron density distribution in the plasma reaction chamber without magnetic material is shown. Figure 13 The electron density distribution in the plasma reaction chamber without magnetic material is shown.

[0045] Figure 18 The electron density distribution in the plasma reaction chamber without magnetic material is shown. Figure 13 The electron density distribution in the plasma reaction chamber without magnetic material is shown.

[0046] Figure 19 The electron density distribution in the plasma reaction chamber without magnetic material is shown. DETAILED DESCRIPTION

[0047] To make the objects, technical solutions and advantages of the embodiments of the present application clearer, the drawings and detailed description will be used to clearly explain the spirit of the present application. Any person skilled in the art can make changes and modifications to the technology taught by the present application without departing from the spirit and scope of the present application.

[0048] The illustrative embodiments of the present application and their description are used to explain the present application, but are not used as limitations of the present application. In addition, the same or similar elements / components in the drawings and embodiments are used to represent the same or similar parts.

[0049] The "first", "second", and the like used herein are not intended to particularly refer to the order or sequence, nor to limit the present application. They are only used to distinguish elements or operations described by the same technical terms.

[0050] The "comprise", "include", "have", "contain", and the like used herein are open terms, i.e., meaning including but not limited to.

[0051] The "and / or" used herein includes any or all combinations of the described items.

[0052] The "plurality" used herein includes "two" and "more than two"; the "plurality" used herein includes "two" and "more than two".

[0053] Some words used to describe the present application will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art on the description of the present application.

[0054] Figure 1A schematic view of a plasma device according to an embodiment of the present application is shown.

[0055] As shown in Figure 1 the plasma device comprises a plasma reaction chamber. The plasma reaction chamber has an upper electrode plate 1 and a lower electrode plate 2, and the upper electrode plate 1 and the lower electrode plate 2 have a voltage difference to generate plasma. The plasma device can also comprise a gas inlet to introduce reaction gas. Specifically, in application, a radio frequency power source is applied to the upper electrode plate 1 and the lower electrode plate 2, at this time a high frequency electric field is generated between the upper and lower electrode plates, and gas molecules are excited and ionized in this high frequency electric field to form plasma. This process can also be referred to as a CCP radio frequency discharge process.

[0056] In the CCP radio frequency discharge process, due to the low pressure, the average free path of electrons satisfies the migration and diffusion of electrons in the chamber, and high energy electrons are generated near the electrode plate and diffuse to the central region to collide to generate and maintain plasma. In this process, the electrons near the electrode plate collide with the particles in the central region to exchange energy. The larger the size of the plasma reaction chamber, the higher the number of single batch of substrates; the higher the frequency of the radio frequency power source for discharging to generate plasma, the less time required for processing a unit batch of substrates, and the damage caused by the bombardment of high energy ions in the plasma to the substrate can be greatly reduced. However, the increase of the size of the electrode plate and the increase of the discharge frequency will bring problems such as edge effect, skin effect and standing wave effect, which will cause the occurrence of plasma peak at the edge of the reaction chamber, thereby affecting the uniformity of the whole plate plasma.

[0057] In view of this, considering the electromagnetic effect and the chamber edge discharge effect in the CCP discharge process, an embodiment of the present application provides a plasma device, which arranges magnetic material in the edge region of the upper and lower electrode plates, changes the plasma density at the edge of the plasma reaction chamber through appropriate magnetic field distribution, so as to reduce the plasma peak at the edge of the plasma reaction chamber when large-area CCP discharge, and make the distribution of plasma in the whole plasma reaction chamber more uniform.

[0058] According to a first embodiment of the present application, a plasma device includes: a plasma reaction chamber including an upper electrode plate and a lower electrode plate, the upper electrode plate and the lower electrode plate having a voltage difference to generate plasma, the upper electrode plate and the lower electrode plate each having at least one side edge; and a magnetic material including: a first magnetic material disposed above a first edge region of the upper electrode plate in a length direction along a first side edge of the upper electrode plate and below a first edge region of the lower electrode plate in a length direction along the first side edge of the lower electrode plate. The first magnetic material has a dimension in the length direction that is greater than a dimension in a width direction. The first edge region of the upper electrode plate is a region of the upper electrode plate that is proximate to the first side edge of the upper electrode plate, and the first edge region of the lower electrode plate is a region of the lower electrode plate that is proximate to the first side edge of the lower electrode plate.

[0059] The present application is described in terms of an orientation relationship when the plasma reaction chamber is placed horizontally and forwardly. Specifically, the plasma reaction chamber includes two electrode plates opposite to each other, which are referred to as an upper electrode plate and a lower electrode plate herein, where "upper" and "lower" refer to an up-down orientation relationship when the plasma reaction chamber is placed horizontally and forwardly, with the upper electrode plate above and the lower electrode plate below, and can also refer to an up-down orientation relationship in a discharge direction of the plasma reaction chamber; and when the plasma reaction chamber is placed vertically or obliquely, the "upper" and "lower" at this time refer to an up-down orientation relationship in the discharge direction of the plasma reaction chamber, i.e., the upper and lower electrode plates at this time still refer to the upper and lower electrode plates when the plasma reaction chamber is placed horizontally and forwardly, but the orientation relationship at this time should change with the change in the placement orientation of the plasma reaction chamber. For example, when the plasma reaction chamber is placed upside down, according to the up-down orientation relationship in the discharge direction of the plasma reaction chamber, the upper electrode plate is located below and the lower electrode plate is located above at this time, at this time, "above" the upper electrode plate should be changed to "below" the upper electrode plate accordingly, and "below" the lower electrode plate should be changed to "above" the lower electrode plate accordingly.

[0060] Similarly, in the present application, when the plasma reaction chamber is placed horizontally, the side edges of the upper electrode plate and the lower electrode plate refer to the side edges of the upper surface of the upper electrode plate and the lower surface of the lower electrode plate, the first edge region of the upper electrode plate refers to a region of the upper surface of the upper electrode plate, and the first edge region of the lower electrode plate refers to a region of the lower surface of the lower electrode plate. When the plasma reaction chamber is placed vertically or obliquely, the orientation relationship should change with the change of the orientation of the plasma reaction chamber. For example, when the plasma reaction chamber is placed upside down, the side edges of the upper electrode plate and the lower electrode plate refer to the side edges of the lower surface of the upper electrode plate and the upper surface of the lower electrode plate, the first edge region of the upper electrode plate refers to a region of the lower surface of the upper electrode plate, and the first edge region of the lower electrode plate refers to a region of the upper surface of the lower electrode plate. The upper surface and the lower surface herein refer to the surface facing upward or downward.

[0061] In addition, "above" and "below" refer to above or below in the vertical direction, that is, directly above or directly below. For example, above the first edge region of the upper electrode plate refers to directly above the first edge region, but does not include the upper side of the oblique side beyond the first edge region in the vertical direction.

[0062] In the above embodiment, the magnetic material is arranged at the edge region of the upper and lower electrode plates to change the distribution of the plasma in the plasma reaction chamber by the magnetic field generated by the magnetic material. Specifically, when large-area CCP discharge is performed, the magnetic field generated by the magnetic material can make the electrons perform spiral motion under the influence of the Lorentz force when they pass through the magnetic induction lines vertically. When the magnetic field is weak, the Lorentz force increases the motion path of the electrons, increases the collision frequency of the electrons, and increases the plasma density. When the magnetic field is strong enough, the Lorentz force reduces the gyroradius of the electrons, reduces the mean free path of the electrons, and reduces the collision frequency of the electrons. Therefore, in the embodiment of the present application, the magnetic field generated by the magnetic material can hinder the migration and diffusion of high-energy electrons generated by the edge discharge of the electrode plate on the one hand, and can reduce the collision generation rate of the plasma on the other hand, so as to ultimately achieve the effect of weakening the edge peak of the plasma.

[0063] Figure 2 A front view of a plasma device according to the first embodiment of the present application is shown, Figure 3 A top view and a bottom view of the plasma device are shown. Figure 2 As shown in the figures, Figure 2 and Figure 3 The plasma device includes a plasma reaction chamber and a magnetic material. The plasma reaction chamber includes an upper electrode plate 1 and a lower electrode plate 2. In the embodiment, the magnetic material is arranged at the edge region of the upper electrode plate and the lower electrode plate. Figure 2 and Figure 3In the example shown in FIG. 1, the upper electrode plate 1 and the lower electrode plate 2 are both quadrilaterals, and the first side edge is a short side edge of the quadrilateral. Specifically, the first side edge of the upper electrode plate 1 is a first short side edge 11 of the upper electrode plate 1, and the first side edge of the lower electrode plate 2 is a first short side edge 21 of the lower electrode plate 2. The first magnetic material 3 includes first magnetic material arranged above the first edge region of the upper electrode plate in the length direction along the direction of the first short side edge 11 of the upper electrode plate 1, and first magnetic material arranged below the first edge region of the lower electrode plate in the length direction along the direction of the first short side edge 21 of the lower electrode plate 2. Here, the first edge region of the upper electrode plate 1 is the region of the upper electrode plate 1 close to the first short side edge 11, and the first edge region of the lower electrode plate 2 is the region of the lower electrode plate 2 close to the first short side edge 21. The size of the first magnetic material 3 in the length direction, i.e., the size in the direction along the first short side edge, is greater than the size in the width direction, i.e., the size in the direction perpendicular to the direction of the first short side edge.

[0064] In the above embodiment, the magnetic material is arranged in the edge region corresponding to one short side edge of the upper and lower electrode plates, so that the plasma edge peak near the edge region can be weakened.

[0065] Figure 4 FIG. 2 shows a front sectional view of another plasma device according to a first embodiment of the present application, Figure 5 FIG. 3 shows a top view and a bottom view of the plasma device shown in FIG. 2. As shown in FIG. 3, Figure 4 FIG. 4 shows a front sectional view of the plasma device shown in FIG. 3, Figure 4 and Figure 5 As shown in FIG. 4, the upper electrode plate 1 and the lower electrode plate 2 of the plasma reaction chamber are both circles, and the first side edge is the circumferential side edge of the circle. The first magnetic material 3 includes first magnetic material arranged above the first edge region of the upper electrode plate in the length direction along the direction of the circumferential side edge of the upper electrode plate 1, and first magnetic material arranged below the first edge region of the lower electrode plate in the length direction along the direction of the circumferential side edge of the lower electrode plate 2. The first edge region of the upper electrode plate 1 is the region of the upper electrode plate 1 close to the circumferential side edge, and the first edge region of the lower electrode plate 2 is the region of the lower electrode plate 2 close to the circumferential side edge. In the present application, the length direction of the magnetic material is the direction in which the length of the magnetic material extends, so the size of the first magnetic material 3 in the length direction, i.e., the size in the direction along the circumferential side edge, is greater than the size in the width direction, i.e., the size in the direction from the circumferential side edge to the center of the circle.

[0066] In the above embodiment, the magnetic material is arranged in the edge region corresponding to the circumferential side edge of the upper and lower electrode plates, so that the plasma edge peak at the circumferential edge region can be weakened.

[0067] As can be seen from the above, when the electrode plate is circular, the electromagnetic material is arranged on one circumferential side edge to achieve comprehensive magnetic field edge coverage, so that the edge of the plasma reaction chamber can achieve plasma edge peak suppression. When the electrode plate is, for example, a quadrilateral, only the plasma edge peak suppression of the side covered by the electromagnetic material can be achieved. Therefore, in an embodiment, when the upper electrode plate and the lower electrode plate are both quadrilateral electrode plates, the magnetic material further comprises: first magnetic material arranged on the second edge region of the upper electrode plate in the length direction along the second side edge of the upper electrode plate and arranged on the second edge region of the lower electrode plate in the length direction along the second side edge of the lower electrode plate, wherein the first magnetic material is a strip-shaped magnetic material, the second edge region of the upper electrode plate is a region of the upper electrode plate close to the second side edge of the upper electrode plate, and the second edge region of the lower electrode plate is a region of the lower electrode plate close to the second side edge of the lower electrode plate. In this way, the magnetic field coverage of the two sides corresponding to the electromagnetic material can be achieved. For example, when the two short sides of the quadrilateral are far apart, resulting in a larger plasma edge peak, the magnetic material can be arranged on the two sides far apart to suppress the larger plasma edge peak.

[0068] Further, on the basis of the above embodiment, the magnetic material can further comprise: first magnetic material arranged on the third edge region and the fourth edge region of the upper electrode plate in the length direction along the third side edge and the fourth side edge of the upper electrode plate, respectively, and arranged on the third edge region and the fourth edge region of the lower electrode plate in the length direction along the third side edge and the fourth side edge of the lower electrode plate, respectively, wherein the third edge region and the fourth edge region of the upper electrode plate are regions of the upper electrode plate close to the third side edge and the fourth side edge of the upper electrode plate, respectively, and the third edge region and the fourth edge region of the lower electrode plate are regions of the lower electrode plate close to the third side edge and the fourth side edge of the lower electrode plate, respectively. In this way, the magnetic field full coverage of the four sides of the electrode plate can be achieved, so as to suppress the plasma peak at all sides of the quadrilateral electrode plate when the four sides of the quadrilateral are all far apart.

[0069] It should be noted that in the present application, the "first side edge", "second side edge", "third side edge" and "fourth side edge" of the upper electrode plate are the side edges corresponding in position to the "first side edge", "second side edge", "third side edge" and "fourth side edge" of the lower electrode plate. For example, when the first side edge of the upper electrode plate is a left short side edge, the first side edge of the lower electrode plate is also a left short side edge in the same orientation. Further, in the present application, the shape and size of the upper electrode plate and the lower electrode plate can be substantially the same.

[0070] Figure 6Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application, Figure 7 Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application, Figure 6 Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application, Figure 6 Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application, Figure 7 Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application, Figure 6 Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application, Figure 7 Fig. 1 shows a front sectional view of another plasma device according to the first embodiment of the present application,

[0071] In one embodiment, the side of the first magnetic material above the upper electrode plate facing the upper electrode plate is the first pole, and the side of the first magnetic material above the upper electrode plate facing away from the upper electrode plate is the second pole; while the side of the first magnetic material below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side of the first magnetic material below the lower electrode plate facing the lower electrode plate is the second pole. The first pole is the N pole, and the second pole is the S pole, or the first pole is the S pole, and the second pole is the N pole. In this way, the opposite polarity of the electrodes at the upper and lower electrode plates can generate magnetic induction lines in the vertical direction between the upper and lower electrode plates, so that the electrons perform spiral motion when passing vertically through the magnetic induction lines under the influence of the Lorentz force. When the magnetic field is strong enough, the gyroradius of the electrons will decrease, the mean free path of the electrons will decrease, and the collision frequency of the electrons will decrease, thereby achieving the effect of weakening the plasma edge peak.

[0072] In one embodiment, the distance between the first magnetic material above the upper electrode plate and the upper electrode plate is 1-30 mm, the distance between the first magnetic material below the lower electrode plate and the lower electrode plate is 1-30 mm, and the distance between the first magnetic material and its adjacent side edge is 2-40 mm. In this way, the magnetic material is arranged around the edge area of the electrode plate, and the opposite magnetic material between the upper and lower electrode plates has a certain distance from the upper and lower electrode plates. The central vertical magnetic induction lines generated by the magnetic material are also controlled to a certain distance from the side edge of the plasma reaction chamber, so that the strength and position of the formed magnetic field can be better controlled to better suppress the plasma edge peak in the plasma reaction chamber.

[0073] In one embodiment, the distance between the four side edges of the upper or lower electrode plate and the center position of the upper or lower electrode plate is the same or different, and the farther the side edge from the center position of the upper or lower electrode plate, the greater the magnetic flux of the first magnetic material corresponding to the side edge. Since the plasma density at the edge of the reaction chamber is higher than that in the central region during large-area CCP discharge, in this embodiment, the magnetic flux of the first magnetic material corresponding to the side edge farther from the center position of the electrode plate is set to be greater.

[0074] In one embodiment, the length of the first magnetic material arranged in the length direction along a side edge at the upper or lower electrode plate is equal to or slightly smaller than the length of the side edge.

[0075] In one embodiment, the first magnetic material 3 can be an electromagnet. When the first magnetic material 3 is an electromagnet, as shown in FIG. 3, the first magnet 3 supplied with direct current or alternating current can be regarded as a rectangular coil arranged at the edge of the chamber, which generates vertical magnetic induction lines and can suppress discharge on the side wall and edge of the reaction chamber. Those skilled in the art can understand that the magnetic field strength can be adjusted as needed by changing the current voltage of the electromagnet according to different plasma densities. Figure 8

[0076] In one embodiment, the first magnetic material 3 can be a permanent magnet. The static magnetic field generated by the permanent magnet is easy to control and does not affect the overall characteristics of the plasma, and can be used to optimize the uniformity control of the plasma in the chamber. Specifically, the permanent magnets arranged above and below the edge area of the electrode plate of the reaction chamber are used to construct a non-uniform magnetic field in the reaction chamber to regulate the plasma density in the chamber, and ultimately achieve the optimization of the uniformity of the plasma in the chamber during large-area CCP discharge.

[0077] ​In addition, according to specific conditions, for example, for different discharge parameters, plasma cavity parameters, etc., considering the different plasma density and the different magnetic field attenuation ability, in addition to the first magnetic material 3, the strength of the magnetic field and the direction and distribution of the magnetic field can be controlled by arranging magnetic materials of different sizes at different positions, so that the plasma density under different conditions can be reasonably optimized. Specifically, according to actual needs, magnetic materials of different sizes and different magnetic fluxes can be selected for combination, or a power coil can be used to generate a variable magnetic field. Preferably, the magnetic flux of the magnetic material can be in the range of 0.1Gs-10Gs.

[0078] Considering the characteristics that the plasma density at the edge of the reaction chamber is higher than that in the central area when the large-area CCP discharges, the magnetic fluxes of the plurality of magnetic materials arranged at the same edge area of the upper and lower electrode plates are generally gradiently decreased in order from the outside of the reaction chamber to the middle, that is, the closer to the outside of the reaction chamber, the higher the magnetic flux, and the closer to the middle of the reaction chamber, the lower the magnetic flux, so that the edge discharge effect can be better inhibited. Based on the above first embodiment, according to the second embodiment of the present application, in addition to the first magnetic material 3, the magnetic material further includes a second magnetic material arranged on the first edge area of the upper electrode plate in the length direction along the first side direction of the upper electrode plate and arranged on the first edge area of the lower electrode plate in the length direction along the first side direction of the lower electrode plate. The second magnetic material is closer to the central position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material. That is, by arranging the magnetic materials in a gradient magnetic flux, the edge discharge effect can be better inhibited. In one embodiment, the first magnetic material and the second magnetic material can be permanent magnets, or the first magnetic material and the second magnetic material can also be electromagnets, and the power is supplied in a manner that the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

[0079] Figure 9 A front sectional view of a plasma device according to the second embodiment of the present application is shown, Figure 10 A front sectional view of a plasma device according to the second embodiment of the present application is shown, Figure 9 The top view and the bottom view of the plasma device are shown. As Figure 9 And Figure 10 As shown, the first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plate that are not adjacent, and Figure 9 And Figure 10The magnetic material further comprises a second magnetic material 4 arranged on the first edge region and the second edge region of the upper electrode plate in the length direction along the first side edge and the second side edge of the upper electrode plate respectively and arranged on the first edge region and the second edge region of the lower electrode plate in the length direction along the first side edge and the second side edge of the lower electrode plate respectively, and a third magnetic material 5 arranged on the first edge region and the second edge region of the upper electrode plate in the length direction along the first side edge and the second side edge of the upper electrode plate respectively and arranged on the first edge region and the second edge region of the lower electrode plate in the length direction along the first side edge and the second side edge of the lower electrode plate respectively. In each edge region, the second magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the first magnetic material, and the third magnetic material is closer to the middle position of the upper electrode plate or the lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is lower than the magnetic flux of the second magnetic material. The first magnetic material, the second magnetic material and the third magnetic material are all permanent magnets.

[0080] In one embodiment, in each edge region, the side of the first magnetic material above the upper electrode plate facing the upper electrode plate is the first pole, and the side of the first magnetic material above the upper electrode plate facing away from the upper electrode plate is the second pole, the side of the first magnetic material below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side of the first magnetic material below the lower electrode plate facing the lower electrode plate is the second pole; the side of the second magnetic material above the upper electrode plate facing away from the upper electrode plate is the first pole, and the side of the second magnetic material above the upper electrode plate facing the upper electrode plate is the second pole, the side of the second magnetic material below the lower electrode plate facing the lower electrode plate is the first pole, and the side of the second magnetic material below the lower electrode plate facing away from the lower electrode plate is the second pole; the side of the third magnetic material facing the second magnetic material is the first pole, and the side of the third magnetic material facing away from the second magnetic material is the second pole. The first pole of the magnetic material is the N pole, and the second pole is the S pole, or the first pole of the magnetic material is the S pole, and the second pole is the N pole.

[0081] The first magnetic material 3, the second magnetic material 4 and the third magnetic material 5 of the present application can be a whole piece of bar-shaped magnetic material having N poles and S poles in the thickness direction, specifically, the first magnetic material 3 and the second magnetic material 4 have N poles or S poles on the side facing or facing away from the electrode plate, and the third magnetic material 5 has N poles or S poles on the side facing or facing away from the second magnetic material. Alternatively, as shown in the drawings, the first magnetic material 3, the second magnetic material 4 or the third magnetic material 5 can also be composed of a plurality of small magnets arranged along the first or second side edge direction of the electrode plate, and the small magnets constituting the first magnetic material 3 and the second magnetic material 4 all have the first pole or the second pole on the side facing or facing away from the electrode plate, and the small magnets constituting the third magnetic material 5 all have the first pole or the second pole on the side facing or facing away from the second magnetic material. Figure 11 ​

[0082] In one embodiment, the distance between the first magnetic material 3, the second magnetic material 4 and the third magnetic material 5 and the upper electrode plate 1 or the lower electrode plate 2 adjacent thereto is 1-30 mm. The distance between the first magnetic material 3 and the first side edge or the second side edge adjacent thereto is 2-40 mm, the distance between the first magnetic material 3 and the second magnetic material 4 adjacent thereto is 5-50 mm, and the distance between the second magnetic material 4 and the third magnetic material 5 adjacent thereto is 10-80 mm.

[0083] Magnetic material fixing devices can be provided at the corresponding positions of the upper electrode plate 1 and the lower electrode plate 2 so as to mount the magnetic materials.

[0084] In one embodiment, the cross-sectional area of the second magnetic material 4 in the direction of the long side is the same as the cross-sectional area of the first magnetic material 3 in the direction of the long side, and the cross-sectional area of the third magnetic material 5 in the direction of the long side is greater than the cross-sectional area of the first magnetic material 3 in the direction of the long side.

[0085] In one embodiment, at the upper electrode plate 1 or the lower electrode plate 2, the length of the first magnetic material 3 is equal to or slightly smaller than the length of the first side edge or the second side edge, the length of the second magnetic material 4 is equal to or slightly smaller than the length of the first magnetic material 3, and the length of the third magnetic material 5 is equal to or slightly smaller than the length of the second magnetic material 4. Specifically, when the magnetic materials are provided only at the opposite first side edge and the second side edge, the lengths of the first, second and third magnetic materials can be equal; when the magnetic materials are provided at all four side edges of the electrode plate, the length of the first magnetic material is greater than the length of the second magnetic material, and the length of the second magnetic material is greater than the length of the third magnetic material, so that the first magnetic material surrounds the second magnetic material along the four side edges, and the second magnetic material surrounds the third magnetic material along the four side edges. In addition, for the first, second or third magnetic material along the four side edges, it can be integrally formed, or formed by four strip-shaped magnetic materials respectively.

[0086] In one embodiment, the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals with a length of 50-500mm and a width of 10-500mm, and the distance between the upper electrode plate and the lower electrode plate is 10-100mm. Preferably, the upper electrode plate and the lower electrode plate are rectangles with a length of 100-300mm and a width of 50-200mm, and the distance between the upper electrode plate and the lower electrode plate is 20-80mm. The upper electrode plate and the lower electrode plate can be rectangles or squares, and it is understood that they are not necessarily rectangles. When the distance between the edge and the center of a rectangular or square electrode plate is far, a peak of the plasma will occur, and the magnetic material arranged at the edge position can be used to control the peak of the plasma at the edge. The distance between the upper electrode plate and the lower electrode plate limits the discharge area of the plasma, and has a direct impact on the formation and size of the edge peak.

[0087] In one embodiment, the cross-sectional area of the second magnetic material 4 along the long side is in the range of 5mm*5mm-30mm*30mm, and the cross-sectional area of the first magnetic material 3 along the long side is in the range of 5mm*5mm-30mm*30mm.

[0088] In one embodiment, the magnetic flux of the first, second and third magnetic materials is in the range of 0.1-20Gs, and preferably in the range of 0.3-10Gs.

[0089] According to the above Figure 9 The application provides a specific application example of the plasma device shown in the above Figure 12 In the specific application example, the upper electrode plate and the lower electrode plate are both rectangles with a size of 1800mm*900mm, and the distance between the upper electrode plate and the lower electrode plate is 70mm; the size of the first magnetic material and the second magnetic material along the long side of the rectangle is 10mm*10mm; the size of the third magnetic material along the long side of the rectangle is 10mm*60mm; the distance between the magnetic material and the adjacent electrode plate is 5mm; the distance between the first magnetic material and the short side of the adjacent electrode plate is 10mm, the distance between the first magnetic material and the second magnetic material is 15mm, and the distance between the third magnetic material and the second magnetic material is 30mm; the magnetic flux of the first magnetic material and the second magnetic material is 1Gs, and the magnetic flux of the third magnetic material is 0.4Gs; the first pole of the magnetic material is set to N pole, and the second pole is set to S pole, and the obtained magnetic field distribution is shown in Figure 12 The magnetic field distribution diagram of one side of the reaction chamber is only schematically shown, and the magnetic field distribution of the other side is the same as that shown on one side). In this way, the first magnetic material and the second magnetic material at the edge of the electrode plate can restrict the diffusion of electrons with a stronger magnetic field, and the third magnetic material with a smaller magnetic flux can allow the electrons to diffuse along the magnetic induction lines. As a result,Figure 12 It can be seen that the magnetic field is gathered in the corner direction of the chamber in a gradient, and the closer to the edge of the plasma reaction chamber, the stronger the influence of the magnetic field. Through the gradient magnetic field distribution, the edge discharge effect can be well inhibited, so as to control the plasma density in the whole chamber, and finally realize the optimization of the uniformity of the plasma in the whole chamber in the large-area CCP discharge process.

[0090] In the above-mentioned second embodiment, by arranging multiple magnetic materials with magnetic fluxes arranged in descending order from outside to inside on the same edge region of the electrode plate, the edge discharge effect can be better inhibited, so as to realize the optimization of the uniformity of the plasma in the whole chamber in the large-area CCP discharge process.

[0091] In addition, considering the feature that the plasma density at the edge of the reaction chamber is higher than that in the central region during the large-area CCP discharge, a side magnetic material can also be arranged at the side of the plasma reaction chamber, and the magnetic field generated by the side magnetic material can further affect the plasma density at the edge of the plasma reaction chamber. Therefore, based on the first embodiment, according to the third embodiment of the present application, the magnetic material further includes: a side magnetic material arranged in the side region of the plasma reaction chamber in the length direction along the first side direction, wherein the side region of the plasma reaction chamber is a region outside the first side of the plasma reaction chamber, and the first side is the side of the plasma reaction chamber between the upper electrode plate and the lower electrode plate and corresponding to the first side. That is, by arranging the magnetic material at the side of the plasma reaction chamber, the edge discharge effect can be better inhibited. In an embodiment, the magnetic flux of the side magnetic material is higher than or equal to that of the first magnetic material. The first magnetic material and the side magnetic material can be permanent magnets, or the first magnetic material and the side magnetic material can also be electromagnets, and the energization is performed in such a way that the magnetic flux of the side magnetic material is higher than or equal to that of the first magnetic material.

[0092] In the above-mentioned third embodiment, the magnetic fields generated by the side magnetic material and the first magnetic material can hinder the migration and diffusion of high-energy electrons generated by the discharge between the electrode plates and the edge of the electrode plate, and also can reduce the collision generation rate of the plasma, so as to finally weaken the edge peak of the plasma.

[0093] Figure 13 A front view of a plasma device according to the third embodiment of the present application is shown, Figure 14 A front view of a plasma device according to the third embodiment of the present application is shown, Figure 13 A front view of a plasma device according to the third embodiment of the present application is shown, Figure 13 A front view of a plasma device according to the third embodiment of the present application is shown, Figure 14 As shown in the drawings, the first electrode plate and the second electrode plate are both rectangular electrode plates, the first side and the second side are two opposite sides of the rectangular electrode plate which are not adjacent, and the first side and the second side are arranged in the length direction of the rectangular electrode plate. Figure 13 andFigure 14 The magnetic material further comprises a first side magnetic material 6 arranged in a first side region of the plasma reaction chamber in a length direction along the first side direction of the upper electrode plate and a second side magnetic material 7 arranged in a third side region of the plasma reaction chamber in a length direction along the first side direction of the lower electrode plate. The first side region is a region outside the first side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate. The second side region is a region outside the second side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the upper electrode plate. The third side region is a region outside the first side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The fourth side region is a region outside the second side of the plasma reaction chamber and between the transversely extended regions of the upper electrode plate and the lower electrode plate and close to the lower electrode plate. The first side is a side of the plasma reaction chamber between the upper electrode plate and the lower electrode plate and corresponding to the first side. The second side is a side of the plasma reaction chamber between the upper electrode plate and the lower electrode plate and corresponding to the second side. The first magnetic material, the first side magnetic material and the second side magnetic material are all permanent magnets.

[0094] In one embodiment, the magnetic flux of the first side magnetic material and the second side magnetic material are both higher than or equal to the magnetic flux of the first magnetic material.

[0095] In one embodiment, the side of the first magnetic material 3 above the upper electrode plate 1 facing the upper electrode plate 1 is the first pole, the side of the first magnetic material 3 above the upper electrode plate 1 facing away from the upper electrode plate 1 is the second pole, the side of the first magnetic material 3 below the lower electrode plate 2 facing away from the lower electrode plate 2 is the first pole, and the side of the first magnetic material 3 below the lower electrode plate 2 facing the lower electrode plate 2 is the second pole; the side of the first side magnetic material 6 facing away from the plasma reaction chamber is the first pole, and the side of the first side magnetic material 6 facing the plasma reaction chamber is the second pole; the side of the second side magnetic material 6 facing the plasma reaction chamber is the first pole, and the side of the second side magnetic material 6 facing away from the plasma reaction chamber is the second pole. The first pole of the magnetic material is the N pole, and the second pole is the S pole, or the first pole of the magnetic material is the S pole, and the second pole is the N pole.

[0096] Similar to the first magnetic material 3, the second magnetic material 4 and the third magnetic material 5, the first side magnetic material 6 and the second side magnetic material 7 in the embodiment of the present application can be a whole piece of bar-shaped magnetic material, which has N or S poles on the surface facing or facing away from the plasma reaction cavity. Alternatively, the first side magnetic material 6 and the second side magnetic material 7 can also be composed of a plurality of small magnets arranged along the first or second side direction of the electrode plate, and each of the small magnets has a first or second pole facing or facing away from the plasma reaction cavity.

[0097] In one embodiment, the distance between the first magnetic material 3 and its adjacent upper or lower electrode plate is 1-30 mm, and the distance between the first and second side magnetic materials and their adjacent side of the plasma reaction cavity is 1-40 mm. The distance between the first magnetic material and its adjacent first or second side is 2-40 mm, and the distance between the first and second side magnetic materials and their adjacent first or second side is 2-40 mm.

[0098] In one embodiment, the cross-sectional area of the first side magnetic material 6 and the second side magnetic material 7 along the long side direction is the same as the cross-sectional area of the first magnetic material 3 along the long side direction.

[0099] In one embodiment, the length of the first side magnetic material 6 and the second side magnetic material 7 is equal to or slightly smaller than the length of the first or second side of the electrode plate.

[0100] In one embodiment, the upper electrode plate 1 and the lower electrode plate 2 are quadrilaterals with a length of 50-500 mm and a width of 10-500 mm, and the distance between the upper and lower electrode plates is 10-100 mm. Preferably, it is a rectangle with a length of 100-300 mm and a width of 50-200 mm, and the distance between the upper and lower electrode plates is 20-80 mm. For specific parameters, please refer to the description of the foregoing embodiments, which will not be repeated here.

[0101] In one embodiment, the cross-sectional area of the first magnetic material 3, the first side magnetic material 6 and the second side magnetic material 7 along the long side direction is in the range of 5mm*5mm-30mm*30mm.

[0102] In one embodiment, the magnetic flux of the first, second and third magnetic materials is in the range of 0.1-20Gs, preferably in the range of 0.3-10Gs.

[0103] According to the above Figure 13The plasma device shown in this application provides a specific application example. In this specific application example, both the upper and lower electrode plates are rectangles of 1800mm*900mm, and the distance between the upper and lower electrode plates is 70mm; the size of the first magnetic material, the first side magnetic material, and the second side magnetic material, with a cross-sectional dimension of 10mm*10mm along the long side of the rectangle; the distance between the first magnetic material and its adjacent electrode plate is 5mm; the distance between the first magnetic material and the short side of its adjacent electrode plate is 10mm; the distance between the first side magnetic material and the second side magnetic material and the side of their adjacent plasma reaction chamber is 5mm; the distance between the first side magnetic material and the second side magnetic material and the short side of their adjacent electrode plate is 10mm; the magnetic flux of the first magnetic material is 1Gs, and the magnetic flux of the first side magnetic material and the second side magnetic material is 5Gs; the first pole of the magnetic material is set as the N pole, and the second pole is set as the S pole, resulting in a magnetic field distribution as shown in the figure. Figure 15 As shown ( Figure 15 The magnetic field distribution on one side of the reaction chamber is shown only schematically; the magnetic field distribution on the other side is the same as the one shown. Figure 15 It is evident that the magnetic materials on the first and second sides with higher magnetic flux at the sidewalls of the reaction chamber are coupled with the magnetic field generated by the first magnetic material, forming a strong local magnetic field on the sidewalls and edge corners of the chamber. This local magnetic field can effectively suppress the density of plasma at the edge of the chamber, ultimately optimizing the uniformity of the plasma throughout the chamber during large-area CCP discharge.

[0104] The peak electron density of the plasma during large-area CCP discharge is 1.21E14m. -3 For example, Figure 16 This diagram illustrates the electron density distribution within the plasma reaction chamber without the addition of magnetic materials. Figure 17 The above application is shown Figure 13 The diagram illustrates the electron density distribution within the plasma reaction chamber in a specific application example of the plasma device. In the figure, the horizontal and vertical axes represent the dimensions of the plasma reaction chamber, and the color changes indicate the electron density values ​​of the plasma at the corresponding locations. Figure 16 As can be seen, without the addition of magnetic materials, the electron density has a peak at the edge of the chamber, while... Figure 17 As shown, after magnetic field coupling is performed using the first magnetic material and the side magnetic material, the strong magnetic field coupled at the edge of the cavity reduces the peak electron density at the edge of the cavity to a certain extent, thereby suppressing the edge discharge effect to some extent.

[0105] Figure 18 The following are examples of applications without the addition of magnetic materials. Figure 13The radial electron density distribution curve of the center of the cavity in the specific application example of the shown plasma device is compared and analyzed. As shown in the figure Figure 18 It can be seen that for the scheme of applying the first magnetic material and the side magnetic material, the peak value of the electron density near the edge region of the reaction chamber decreases, and the overall uniformity of the plasma in the cavity is improved.

[0106] In the third embodiment described above, by arranging the side magnet outside the side of the plasma reaction cavity, the density of the plasma at the edge of the chamber can be better inhibited, and ultimately the uniformity of the plasma in the whole cavity in the large-area CCP discharge process is optimized.

[0107] In the above embodiments of the present application, by applying magnetic materials with different magnetic flux strengths, different magnetic field directions and different magnetic field arrangements at the edge of the plasma reaction cavity to control the diffusion and transport of electrons in the chamber, the uniformity of the plasma in the whole chamber is improved. By adjusting the magnetic field of the magnetic material, the influence of factors such as edge effect, standing wave effect and skin effect on the plasma density can be effectively inhibited, thereby improving the uniformity of the whole plate plasma and improving the effect of whole plate coating, which has important significance for improving the quality and yield of semiconductor, photovoltaic and other products. In addition, this method will not have a great impact on the overall characteristics of the plasma in the chamber, such as density and temperature, so it will not have a negative impact on the quality of the coating. Moreover, the present application does not need to change the original equipment and process, only needs to adjust the external magnetic material to effectively solve the problem of plasma uniformity in the large-area CCP discharge process, which is simple and easy to implement.

[0108] It should be noted that in the present application, "above" and "below" refer to the vertical direction, i.e. directly above or directly below. For example, "above the first edge region of the upper electrode plate" refers to directly above the first edge region, and does not include the upper side of the slanted side beyond the first edge region in the vertical direction. Similarly, "outside" also refers to the vertical direction, and does not include the outside of the slanted side. In addition, in the present application, the distance between the magnetic material and the side of the electrode plate refers to the distance between the magnetic material and the side in the direction parallel to the electrode plate or in the direction perpendicular to the electrode plate. For example, the distance between the first magnetic material and the first or second side refers to the distance between the first magnetic material and the first or second side in the direction parallel to the electrode plate; the distance between the side magnetic material and the first side refers to the distance between the side magnetic material and the first side in the direction perpendicular to the electrode plate. In addition, in the present application, "upper" electrode plate, "lower" electrode plate, "side", "outside" of the side, etc. are all relative concepts, and are described based on the upper electrode plate being on top and the lower electrode plate being on the bottom. Those skilled in the art should understand that when the placement position of the plasma reaction chamber is changed, for example, when the upper electrode plate is placed on the side, the positional description of the top will also change accordingly.

[0109] The present application also provides a plasma deposition device. Figure 19 A plasma deposition device according to a fourth embodiment of the present application is shown. As shown in Figure 19 The plasma deposition device includes the plasma device as described above, further includes an outer chamber 8 surrounding the plasma device, and a gas inlet 9 provided on the outer chamber 8 for introducing reaction gas. Optionally, the plasma deposition device can further include a feedthrough copper coil 10, a Teflon insulating material 11 and a heating plate 12. In the plasma deposition device, the upper electrode plate 1 can be a metal electrode which can serve as a shower plate of the plasma deposition device, and the lower electrode plate 2 can be a graphite plate which can be a ground electrode. Figure 19 The plasma device in the plasma deposition device shown in the middle is the plasma device in the first embodiment of the present application, and those skilled in the art understand that it can also be the plasma device in other embodiments.

[0110] In the above embodiments or implementation manners of the present application, various embodiments or implementation manners are associated with each other, and can be mutually referred to and cited without departing from the general principles.

[0111] The above description is only a specific implementation manner of the present application, and any equivalent changes and modifications made by those skilled in the art without departing from the concept and principles of the present application shall fall within the scope of protection of the present application.

Claims

1. A plasma device, characterized in that, include: A plasma reaction chamber, comprising an upper electrode plate and a lower electrode plate, wherein the upper electrode plate and the lower electrode plate have a voltage difference to generate plasma, and both the upper electrode plate and the lower electrode plate have at least one side. as well as A magnetic material includes: a first magnetic material disposed above a first edge region of the upper electrode plate along a first side direction of the upper electrode plate and disposed below the first edge region of the lower electrode plate along a first side direction of the lower electrode plate, wherein the first magnetic material has a larger dimension in the length direction than its dimension in the width direction, the first edge region of the upper electrode plate is the region of the upper electrode plate near the first side edge of the upper electrode plate, and the first edge region of the lower electrode plate is the region of the lower electrode plate near the first side edge of the lower electrode plate. Wherein, the side of the first magnetic material located above the upper electrode plate facing the upper electrode plate is the first pole, and the side facing away from the upper electrode plate is the second pole; the side of the first magnetic material located below the lower electrode plate facing away from the lower electrode plate is the first pole, and the side facing the lower electrode plate is the second pole.

2. The apparatus according to claim 1, characterized in that, Both the upper electrode plate and the lower electrode plate are quadrilateral electrode plates. The magnetic material further includes: a first magnetic material disposed above the second edge region of the upper electrode plate along the second side direction of the upper electrode plate and disposed below the second edge region of the lower electrode plate along the second side direction of the lower electrode plate, wherein the first magnetic material is a bar magnetic material, the second edge region of the upper electrode plate is the region of the upper electrode plate close to the second side of the upper electrode plate, and the second edge region of the lower electrode plate is the region of the lower electrode plate close to the second side of the lower electrode plate.

3. The apparatus according to claim 2, characterized in that, The magnetic material further includes: a first magnetic material disposed above the third and fourth edge regions of the upper electrode plate along the third and fourth side directions of the upper electrode plate, respectively, and disposed below the third and fourth edge regions of the lower electrode plate along the third and fourth side directions of the lower electrode plate, respectively, wherein the third and fourth edge regions of the upper electrode plate are regions of the upper electrode plate close to the third and fourth side directions of the upper electrode plate, respectively, and the third and fourth edge regions of the lower electrode plate are regions of the lower electrode plate close to the third and fourth side directions of the lower electrode plate, respectively.

4. The apparatus according to any one of claims 1-3, characterized in that, The distance between the first magnetic material located above the upper electrode plate and the upper electrode plate is 1-30mm, and the distance between the first magnetic material located below the lower electrode plate and the lower electrode plate is 1-30mm. The distance between the first magnetic material and its adjacent first, second, third, or fourth side is 2-40 mm.

5. The apparatus according to claim 2 or 3, characterized in that, The distances between the four sides of the upper or lower electrode plate and the center position of the upper or lower electrode plate may be the same or different, wherein the magnetic flux of the first magnetic material corresponding to the side farther away from the center position of the upper or lower electrode plate is greater.

6. The apparatus according to claim 1, characterized in that, The magnetic material further includes a second magnetic material disposed above the first edge region of the upper electrode plate along the first side direction of the upper electrode plate and disposed below the first edge region of the lower electrode plate along the first side direction of the lower electrode plate. The second magnetic material is closer to the center of the upper or lower electrode plate than the first magnetic material, and the magnetic flux of the second magnetic material is lower than or equal to the magnetic flux of the first magnetic material.

7. The apparatus according to claim 2, characterized in that, Both the upper electrode plate and the lower electrode plate are rectangular electrode plates. The first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate. The magnetic material further includes a second magnetic material disposed above the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate, respectively, and disposed below the first edge region and the second edge region of the lower electrode plate along the first side and the second side of the lower electrode plate, respectively. Also included is a third magnetic material disposed above the first edge region and the second edge region of the upper electrode plate along the first side and the second side of the upper electrode plate, respectively, and disposed below the first edge region and the second edge region of the lower electrode plate along the first side and the second side of the lower electrode plate, respectively. The first magnetic material, the second magnetic material, and the third magnetic material are all permanent magnets. In each of the first edge regions and the second edge regions, the second magnetic material is closer to the center of the upper or lower electrode plate than the first magnetic material, and the third magnetic material is closer to the center of the upper or lower electrode plate than the second magnetic material; the magnetic flux of the second magnetic material is less than or equal to the magnetic flux of the first magnetic material, and the magnetic flux of the third magnetic material is less than the magnetic flux of the second magnetic material.

8. The apparatus according to claim 7, characterized in that, The side of the second magnetic material located above the upper electrode plate that faces away from the upper electrode plate is the first pole, and the side that faces the upper electrode plate is the second pole. The side of the second magnetic material located below the lower electrode plate that faces the lower electrode plate is the first pole, and the side that faces away from the lower electrode plate is the second pole. The side of the third magnetic material facing the second magnetic material is the first pole, and the side facing away from the second magnetic material is the second pole.

9. The apparatus according to claim 7 or 8, characterized in that, The distance between the first magnetic material, the second magnetic material, and the third magnetic material and their adjacent upper or lower electrode plate is 1-30 mm; The distance between the first magnetic material and its adjacent first or second side is 2-40 mm, the distance between the first magnetic material and its adjacent second magnetic material is 5-50 mm, and the distance between the second magnetic material and its adjacent third magnetic material is 10-80 mm.

10. The apparatus according to claim 7 or 8, characterized in that, Along the direction of the third side of the rectangular electrode plate, which is perpendicular to the first side, the cross-sectional area of ​​the second magnetic material is the same as that of the first magnetic material, and the cross-sectional area of ​​the third magnetic material is greater than that of the first magnetic material.

11. The apparatus according to claim 7 or 8, characterized in that, Each of the first, second, and third magnetic materials consists of a plurality of small magnets arranged along the first or second side.

12. The apparatus according to claim 1, characterized in that, The magnetic material further includes: a side magnetic material disposed in the side region of the plasma reaction cavity along the first side direction in the length direction, wherein the side region of the plasma reaction cavity is the region located outside the first side surface of the plasma reaction cavity, and the first side surface is the side surface of the plasma reaction cavity located between the upper electrode plate and the lower electrode plate and corresponding to the first side surface.

13. The apparatus according to claim 12, characterized in that, The magnetic flux of the side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

14. The apparatus according to claim 2, characterized in that, Both the upper electrode plate and the lower electrode plate are rectangular electrode plates. The first side and the second side are two non-adjacent opposite sides of the rectangular electrode plate. The magnetic material further includes: a first-side magnetic material disposed in the first and second side regions of the plasma reaction cavity along the length direction of the first and second side of the upper electrode plate, respectively; and a second-side magnetic material disposed in the third and fourth side regions of the plasma reaction cavity along the length direction of the first and second side of the lower electrode plate, respectively. The first side region is located outside the first side of the plasma reaction cavity and between the lateral extension regions of the upper and lower electrode plates, and close to the upper electrode plate. The second side region is located outside the second side of the plasma reaction cavity and on the upper electrode plate. The third side region is located outside the first side of the plasma reaction chamber and between the lateral extension regions of the upper and lower electrode plates, and close to the lower electrode plate. The fourth side region is located outside the second side of the plasma reaction chamber and between the lateral extension regions of the upper and lower electrode plates, and close to the lower electrode plate. The first side is the side of the plasma reaction chamber located between the upper and lower electrode plates and corresponding to the first side. The second side is the side of the plasma reaction chamber located between the upper and lower electrode plates and corresponding to the second side. The first magnetic material, the first side magnetic material, and the second side magnetic material are all permanent magnets.

15. The apparatus according to claim 14, characterized in that, The magnetic flux of both the first side magnetic material and the second side magnetic material is higher than or equal to the magnetic flux of the first magnetic material.

16. The apparatus according to claim 14 or 15, characterized in that, The side of the first side magnetic material facing away from the plasma reaction cavity is the first pole, and the side facing the plasma reaction cavity is the second pole; the side of the second side magnetic material facing the plasma reaction cavity is the first pole, and the side facing away from the plasma reaction cavity is the second pole.

17. The apparatus according to claim 14 or 15, characterized in that, The distance between the first magnetic material and its adjacent upper or lower electrode plate is 1-30 mm, and the distance between the first and second side magnetic materials and their adjacent sides of the plasma reaction chamber is 1-40 mm. The distance between the first magnetic material and its adjacent first or second side is 2-40 mm, and the distance between the first side magnetic material and the second side magnetic material and their adjacent first or second side is 2-40 mm.

18. The apparatus according to claim 14 or 15, characterized in that, Along the direction of the third side perpendicular to the first side of the rectangular electrode plate, the cross-sectional area of ​​the first side magnetic material and the second side magnetic material is the same as the cross-sectional area of ​​the first magnetic material.

19. The apparatus according to claim 2, 3, 6, or 12, characterized in that, The magnetic material is an electromagnet, used to pass direct current or alternating current during the plasma generation process.

20. The apparatus according to claim 1, characterized in that, The upper and lower electrode plates are quadrilaterals with a length of 50-500mm and a width of 10-500mm, and the distance between the upper and lower electrode plates is 10-100mm.

21. A plasma deposition apparatus, comprising: The plasma device as described in any one of claims 1-20; The outer cavity surrounds the plasma device; as well as An air inlet is located on the outer cavity and is used to introduce reactive gases.

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