Co-sputtered silicon-metal composite layer for anode electrode of all-solid-state battery cell

Abstract

The present invention provides a battery cell comprising: C cathode electrodes comprising a cathode active material layer disposed on a cathode current collector; a anode electrodes including an anode active material layer disposed on an anode current collector; and S spacers, wherein A, C, and S are integers greater than 1. The anode active material layer includes co-sputtered silicon and metal. The metal is different from silicon.

Description

Technical Field

[0001] The present disclosure relates to battery cells, and more particularly to an anode electrode including a co-sputtered silicon-metal composite layer for a battery cell. Background Art

[0002] The information provided in this section is intended to generally introduce the background of the present disclosure. To the extent that work currently named as inventors is described in this section, and aspects of the specification that may not have been otherwise identified as prior art at the time of filing, are not admitted, either explicitly or implicitly, as prior art to the present disclosure.

[0003] The present disclosure relates to battery cells, and more particularly to an anode electrode including a co-sputtered silicon-metal composite layer for a battery cell.

[0004] Electric vehicles (EVs), such as battery electric vehicles (BEVs), hybrid vehicles, and / or fuel cell vehicles, include one or more motors and a battery system including one or more battery cells, modules, and / or battery packs. A power control system is used to control the charging and / or discharging of the battery system during charging and / or driving. Summary of the invention

[0005] A battery cell comprising: C cathode electrodes comprising a cathode active material layer disposed on a cathode current collector; A anode electrodes comprising an anode active material layer disposed on an anode current collector; and S separators, wherein A, C, and S are integers greater than 1. The anode active material layer comprises co-sputtered silicon and a metal. The metal is different from the silicon.

[0006] In other features, the metal is selected from titanium (Ti), zirconium (Zr), Group 4 (IVb) metals, vanadium (V), niobium (Nb), and Group 5 (Vb) metals.

[0007] In other features, the metal includes titanium. Silicon accounts for 30 at% to 99.5 at% of the anode active material layer, and titanium accounts for 0.5 at% to 70 at% of the anode active material layer. The anode current collector has a surface roughness of 2 μm to 12 μm. The anode active material layer includes a plurality of columns. The plurality of columns have a height of 1.0 μm to 80 μm and a width of 1.0 μm to 80 μm.

[0008] In other features, the anode active material layer is planar and has a thickness of 2 μm to 80 μm. The anode active material layer is planar and includes a plurality of protrusions. The thickness of the anode active material layer is 2 μm to 80 μm. The height of the plurality of protrusions is 0.1 μm to 20 μm.

[0009] In other features, the anode active material layer is planar and includes a plurality of recesses. The anode active material layer has a thickness of 2 μm to 80 μm. The plurality of recesses has a depth of 0.1 μm to 20 μm.

[0010] In other features, the cathode active material layer includes a cathode active material selected from rock salt layered oxides, spinels, polyanion cathodes, olivine cathodes, lithium transition metal oxides, surface coated cathode materials, doped cathode materials, and combinations thereof. The cathode active material layer includes a solid electrolyte selected from sulfide-based solid electrolytes, halide-based solid electrolytes, and hydride-based solid electrolytes. The porosity of the anode active material layer is 5% to 70%.

[0011] A battery cell comprising: C cathode electrodes comprising a cathode active material layer disposed on a cathode current collector; A anode electrodes comprising an anode active material layer disposed on an anode current collector; and S separators, wherein A, C, and S are integers greater than 1. The anode active material layer comprises co-sputtered silicon and titanium, the silicon accounting for 30 at% to 99.5 at% of the anode active material layer, and the titanium accounting for 0.5 at% to 70 at% of the anode active material layer.

[0012] In other features, the anodically active material layer comprises a plurality of pillars having a height of 1.0 μm to 80 μm and a width of 1.0 μm to 80 μm. The anodically active material layer is planar and has a thickness of 2 μm to 80 μm.

[0013] In other features, the anode active material layer is planar and includes a plurality of protrusions. The thickness of the anode active material layer is 2 μm to 80 μm. The height of the plurality of protrusions is 0.1 μm to 20 μm.

[0014] In other features, the anode active material layer is flat and includes a plurality of recesses. The thickness of the anode active material layer is 2 μm to 80 μm. The depth of the plurality of recesses is 0.1 μm to 20 μm.

[0015] In other features, the cathode active material comprises a cathode active material selected from rock salt layered oxides, spinels, polyanion cathodes, olivine cathodes, lithium transition metal oxides, surface coated cathode materials, doped cathode materials, and combinations thereof. The cathode active material layer comprises a solid electrolyte selected from sulfide-based solid electrolytes, halide-based solid electrolytes, and hydride-based solid electrolytes.

[0016] In other features, the porosity of the anode active material layer is from 5% to 70%.

[0017] The present invention discloses the following scheme:

[0018] Solution 1. A battery cell comprising:

[0019] C cathode electrodes comprising a cathode active material layer disposed on a cathode current collector;

[0020] A anode electrode including an anode active material layer disposed on an anode current collector; and

[0021] S spacers, wherein A, C and S are integers greater than 1,

[0022] The anode active material layer comprises co-sputtered silicon and metal, wherein the metal is different from the silicon.

[0023] Option 2. A battery cell according to Option 1, wherein the metal is selected from titanium (Ti), zirconium (Zr), Group 4 (IVb) metals, vanadium (V), niobium (Nb) and Group 5 (Vb) metals.

[0024] Option 3. The battery cell according to Option 1, wherein:

[0025] The metal includes titanium,

[0026] The silicon accounts for 30 at % to 99.5 at % of the anode active material layer, and

[0027] The titanium accounts for 0.5 at % to 70 at % of the anode active material layer.

[0028] Option 4. The battery cell according to Option 3, wherein the anode current collector has a surface roughness of 2 μm to 12 μm.

[0029] Option 5. The battery cell of Option 3, wherein the anode active material layer comprises a plurality of pillars.

[0030] Embodiment 6. The battery cell according to embodiment 5, wherein the plurality of pillars have a height of 1.0 μm to 80 μm and a width of 1.0 μm to 80 μm.

[0031] Embodiment 7. The battery cell according to embodiment 1, wherein the anode active material layer is planar and has a thickness of 2 μm to 80 μm.

[0032] Embodiment 8. The battery cell according to embodiment 1, wherein the anode active material layer is planar and includes a plurality of protrusions.

[0033] Embodiment 9. The battery cell according to embodiment 8, wherein:

[0034] The thickness of the anode active material layer is 2 μm to 80 μm; and

[0035] The height of the plurality of protrusions is 0.1 μm to 20 μm.

[0036] Embodiment 10. The battery cell of embodiment 1, wherein the anode active material layer is planar and includes a plurality of recesses.

[0037] Embodiment 11. The battery cell according to embodiment 10, wherein:

[0038] The thickness of the anode active material layer is 2 μm to 80 μm; and

[0039] The depth of the plurality of recesses is 0.1 μm to 20 μm.

[0040] Embodiment 12. The battery cell according to embodiment 1, wherein:

[0041] The cathode active material layer comprises a cathode active material selected from rock salt layered oxides, spinels, polyanion cathodes, olivine cathodes, lithium transition metal oxides, surface coated cathode materials, doped cathode materials, and combinations thereof, and

[0042] The cathode active material layer includes a solid electrolyte selected from a sulfide-based solid electrolyte, a halide-based solid electrolyte, and a hydride-based solid electrolyte.

[0043] Embodiment 13. The battery cell according to embodiment 12, wherein the porosity of the anode active material layer is 5% to 70%.

[0044] Solution 14. A battery cell comprising:

[0045] C cathode electrodes comprising a cathode active material layer disposed on a cathode current collector;

[0046] A anode electrode including an anode active material layer disposed on an anode current collector; and

[0047] S spacers, wherein A, C and S are integers greater than 1,

[0048] The anode active material layer comprises co-sputtered silicon and titanium, the silicon accounting for 30 at % to 99.5 at % of the anode active material layer, and the titanium accounting for 0.5 at % to 70 at % of the anode active material layer.

[0049] Embodiment 15. The battery cell according to embodiment 14, wherein the anode active material layer comprises a plurality of pillars having a height of 1.0 μm to 80 μm and a width of 1.0 μm to 80 μm.

[0050] Embodiment 16. The battery cell of embodiment 14, wherein the anode active material layer is planar and has a thickness of 2 μm to 80 μm.

[0051] Embodiment 17. The battery cell of embodiment 14, wherein:

[0052] The anode active material layer is planar and includes a plurality of protrusions,

[0053] The thickness of the anode active material layer is 2 μm to 80 μm; and

[0054] The height of the plurality of protrusions is 0.1 μm to 20 μm.

[0055] Embodiment 18. The battery cell of embodiment 14, wherein:

[0056] The anode active material layer is planar and includes a plurality of recesses,

[0057] The thickness of the anode active material layer is 2 μm to 80 μm; and

[0058] The depth of the plurality of recesses is 0.1 μm to 20 μm.

[0059] Embodiment 19. The battery cell of embodiment 14, wherein:

[0060] The cathode active material layer comprises a cathode active material selected from rock salt layered oxides, spinels, polyanion cathodes, olivine cathodes, lithium transition metal oxides, surface coated cathode materials, doped cathode materials, and combinations thereof, and

[0061] The cathode active material layer includes a solid electrolyte selected from a sulfide-based solid electrolyte, a halide-based solid electrolyte, and a hydride-based solid electrolyte.

[0062] Option 20. The battery cell according to Option 14, wherein the porosity of the anode active material layer is 5% to 70%.

[0063] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended to be illustrative only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] The present disclosure will be more fully understood through the detailed description and accompanying drawings, in which:

[0065] Figure 1is a side cross-sectional view of an example of a battery cell according to the present disclosure, the battery cell including a cathode electrode disposed in a battery cell housing, an anode electrode including a co-sputtered Si-metal layer, and a separator;

[0066] Figure 2 is a more detailed side cross-sectional view of an example of a battery cell according to the present disclosure, the battery cell including a cathode electrode disposed in a battery cell housing, an anode electrode including a co-sputtered Si-metal layer, and a separator;

[0067] Figure 3A is a side view of an anode electrode including a columnar co-sputtered Si-metal active material according to the present disclosure;

[0068] Figure 3B is a perspective view illustrating a co-sputtered silicon-metal pillar according to the present disclosure;

[0069] FIG. 4A to FIG. 4C is a side cross-sectional view of an example of an anode electrode including a co-sputtered Si-metal layer according to the present disclosure;

[0070] FIG. 5A to FIG. 5C is a side cross-sectional view of an example of an anode electrode including a porous co-sputtered Si-metal layer according to the present disclosure;

[0071] FIG. 6A to FIG. 6C is a functional block diagram of a DC magnetron for co-sputtering Si-metal layers according to the present disclosure;

[0072] Fig. 7A and Figure 7B are graphs illustrating XRD patterns and Raman spectra of a Si layer and a co-sputtered Si-Ti layer according to the present disclosure, respectively; and

[0073] Fig. 8A and Figure 8B is a graph illustrating the capacity and capacity retention % of Si layers and Si—Ti layers according to the present disclosure as a function of cycle number.

[0074] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0075] Although battery cells according to the present disclosure are shown in the context of an electric vehicle, the battery cells may be used in stationary applications and / or other applications.

[0076] Silicon is environmentally friendly, has a reasonable electrochemical potential (relative to Li / Li + is about 0.3 V) and high theoretical capacity (e.g., for Li 4.4Si has a capacity of 4200 mAh / g), so silicon has become a promising alternative to graphite-based anode electrodes for all-solid-state battery (ASSB) cells. However, silicon anode electrodes have large volume expansion (>300%) and high mechanical stress during charging, which leads to cracking and / or pulverization of silicon anode electrodes, followed by rapid capacity decay during cycling. In addition, the rate performance of solid-state silicon anodes needs to be improved.

[0077] Advanced silicon anode electrodes for ASSB cells include a co-sputtered silicon-metal layer (e.g., a silicon-titanium (Si-Ti) layer). The metal includes titanium (Ti), zirconium (Zr), other Group 4 (IVb) metals, vanadium (V), niobium (Nb), and other Group 5 (Vb) metals. The metal atoms in the Si-metal layer act as atomic binders to hold the Si atoms together and stabilize the Si structure during lithiation. The metal atoms reduce silicon volume expansion and increase the cycle life of the ASSB cell. The metal atoms also increase the conductivity of the silicon anode electrode and improve the power capability.

[0078] Reference now Figure 1 The battery cell 10 includes C cathode electrodes 20, A anode electrodes 40 including a co-sputtered Si-metal layer, and S separators 32, which are arranged in a predetermined order in a battery cell stack 12 located in a housing 50, where C, S, and A are integers greater than zero. The C cathode electrodes 20-1, 20-2, ..., and 20-C include a cathode active material layer 24 arranged on one or both sides of a cathode current collector 26.

[0079] The A anode electrodes 40-1, 40-2, ... and 40-A include an anode active material layer 42 disposed on one or both sides of an anode current collector 46. The anode active material of the A anode electrodes 40-1, 40-2, ... and 40-A includes a co-sputtered Si-metal layer as will be further described below.

[0080] In some examples, cathode active material layer 24 is an electrode disposed adjacent to (or attached to) cathode current collector 26. In some examples, cathode active material layer 24 includes a coating applied to the current collector, the coating including one or more active materials, one or more conductive fillers / additives, and / or one or more binder materials.

[0081] In some examples, the cathode current collector 26 and / or the anode current collector 46 include metal foil, metal mesh and / or porous metal mesh. In some examples, the cathode current collector 26 is made of one or more materials selected from aluminum, stainless steel, brass, bronze, zinc and / or their alloys. In some examples, the anode current collector 46 is made of one or more materials selected from copper or stainless steel. The external tabs 28 and 48 are respectively connected to the current collectors of the cathode electrode and the anode electrode, and can be arranged on the same side or opposite sides of the battery stack 12. The external tabs 28 and 48 are connected to the terminals of the battery cells.

[0082] Reference now Figure 2 , the battery cell 10 is shown in more detail. The cathode active material layer 24 includes a cathode active material 122 and a solid electrolyte 124. The anode active material layer 42 includes a co-sputtered Si-metal layer 142. The S separators 32 include a solid electrolyte 132.

[0083] Reference now Figure 3A and Figure 3B , the co-sputtered Si-metal layer 142 may include Si-metal pillars. In some examples, the pillars have a first dimension a in the range of 0.5 μm to 40 μm (e.g., 4.0 μm) (where 2*a corresponds to the vertical height) and a second dimension b in the range of 0.5 μm to 40 μm (e.g., 4.0 μm) (where 2*b corresponds to the lateral width).

[0084] Reference now FIG. 4A to FIG. 4C , various examples of co-sputtered Si-metal layers are shown. Figure 4A In FIG. 1 , the planar surface 142 - 1 is dense and comprises a planar co-sputtered Si-metal layer deposited on the anode current collector 46 . Dimension d min (from the top surface of the anode current collector 46 to the top surface thereof) is 2 μm to 80 μm.

[0085] exist Figure 4B In FIG. 1 , the planar surface 142 - 2 is dense and includes a co-sputtered Si-metal layer having a recess 170 on its top surface. Dimension d min The dimension d (from the top surface of the anode current collector 46 to the bottom of the recess 170) is 2 μm to 80 μm, and corresponds to the depth of the recess. 表面 0.1μm to 20μm.

[0086] exist Figure 4C In FIG. 1 , the planar surface 142 - 3 is dense and includes a co-sputtered Si-metal layer having a protrusion 180 . Dimension d min The dimension d (from the top surface of the anode current collector 46 to the top surface thereof (excluding the protrusion 180)) is 2 μm to 80 μm, and corresponds to the depth of the protrusion d 表面(d surface ) is 0.1 μm to 20 μm. By controlling the surface roughness R of the anode current collector 46 z and one or more PVD process parameters to produce flat, concave or convex surfaces.

[0087] Reference now FIG. 5A to FIG. 5C , various examples of porous co-sputtered Si-metal layers are shown. Figure 5A In FIG. 4 , the planar surface 142 - 4 is porous and comprises a co-sputtered Si-metal layer deposited on the anode current collector 46 . Dimension d min 2μm to 80μm.

[0088] exist Figure 5B In FIG. 1 , the planar surface 142 - 5 is porous and comprises a co-sputtered Si-metal layer having a recess 170 . Dimension d min is 2 μm to 80 μm and corresponds to the dimension d of the depth 表面 0.1μm to 20μm.

[0089] exist Figure 5C In FIG. 1 , the planar surface 142 - 6 is porous and includes a co-sputtered Si-metal layer having a protrusion 180 . Dimension d min The dimension d is 2 μm to 80 μm and corresponds to the depth of the convex portion. 表面 By controlling the surface roughness R of the anode current collector 46 z and one or more PVD process parameters to produce a flat, concave or convex surface and / or porosity. In some examples, the porosity is 5% to 70%. In some examples, the metal includes titanium and the Si-Ti layer includes 30 to 99.5 at% (e.g., 84.4 at%) Si and 0.5 to 70 at% (e.g., 15.6 at%) Ti. The area capacity is 0.5 to 20 mAh / cm 2 (e.g. 3 to 10 mAh / cm 2 ).

[0090] In some examples, the surface of the anode current collector 46 is roughened to enhance adhesion to Si (or low roughness surface). In some examples, the anode current collector 46 has a thickness of 4 μm to 30 μm. In some examples, the anode current collector 46 is approximately flat (R z In other examples, the surface roughness R z In some examples, the anode current collector 46 includes copper, stainless steel, nickel, iron, or titanium. In some examples, the anode current collector 46 includes copper with a thickness of 16 μm and a surface roughness R of 2 to 12 μm. z 8μm.

[0091] Reference now FIG. 6A to FIG. 6C , which is a functional block diagram of a magnetron used for co-sputtering Si-metal layers. Fig. 6A A DC magnetron sputtering device 300 is shown, which includes Si and metal targets for co-sputtering a Si-metal layer on an anode current collector 46. The anode current collector 46 is arranged on a substrate support 314 in a process chamber 310. A magnetron cathode 316-1, 316-2, ... (also referred to as a magnetron cathode 316) includes a magnet group 320-1, 320-2, ... (also referred to as magnet 320) arranged above the substrate support 314 and Si or metal targets 318-1, 318-2, ... (also referred to as a target 318).

[0092] During the deposition process, a process gas mixture such as argon (Ar) is introduced from a gas source 322 into the process chamber 310 while supplying AC and / or DC power. In some examples, a mass flow controller 324 and a valve 326 are used to meter the process gas from the gas source 322. A throttle valve 334 and / or a pump 338 may be used to control the pressure within the process chamber 310 and / or to exhaust reactants from the process chamber 310. A DC source 344-1, 344-2, ... (also referred to as a DC source 344) supplies a DC voltage to the magnetron cathode 316. An AC source 346 supplies an AC voltage to the magnetron cathode 316. In some examples, the anode current collector 46 and the substrate support 314 (such as a DC source 346) are rotated during the co-sputtering process. Figure 6B ) to provide a more uniform distribution of sputtered material on the anode current collector 46. In other examples, the target 318 is rotated relative to the anode current collector 46 and the substrate support 314 (as shown in FIG. Figure 6C ).

[0093] During the deposition process, target materials (Si and metal) are ejected from the target 318 and deposited on the anode current collector 46. Material is also sputtered from the exposed surface of the anode current collector 46. In some examples, the Si-metal layer is deposited using pulsed DC magnetron sputtering in an argon (Ar) atmosphere.

[0094] In some examples, the DC source 344 supplies a DC voltage of 200 V to 800 V (e.g., 450 V). In some examples, the cathode power from the AC source 346 is supplied to the Si target at a frequency of 20 kHz to 200 kHz, which is in the range of 2 kW to 30 kW (e.g., 6 kW). In some examples, the cathode power from the AC source 346 is supplied to the metal target at a frequency of 20 kHz to 200 kHz, which is in the range of 0.1 kW to 30 kW (e.g., 0.7 kW).

[0095] Compared to wet methods for coating sulfide-based electrodes, the deposition of Si-metal layers is solvent-free (no H 2 O / O2 Control). In addition, the anode electrode has improved mechanical flexibility.

[0096] Reference now Fig. 7A and Figure 7B , the graphs illustrate X-ray diffraction (XRD) patterns and Raman spectra of the silicon layer (at 414), the Si-Ti layer (at 410), and the roughened current collector (at 416), respectively. Fig. 7A In the XRD pattern, the deposited Si layer and Si-Ti layer are amorphous, with no XRD diffraction peaks corresponding to Si or Ti. Figure 7B Medium, 465cm -1 The peak at can be attributed to the transverse optical (TO) mode of amorphous silicon (a-Si). Adding Ti to the Si matrix can reduce the a-Si peak intensity, which may be due to the decrease in the number of Si-Si bonds with the increase of Ti content.

[0097] Now Fig. 8A and Figure 8B , respectively, shows the capacity and capacity retention rate % of the silicon layer 414 and the Si-Ti layer 410 at 25°C rate performance and 25°C cycle performance as a function of the number of cycles. The anode electrode loading is 3.5 mAh / cm 2 The cathode load is 1.41 mAh / cm 2 The titanium-introduced silicon layer at 410 provides enhanced rate capability and extended cycle life due to the introduction of titanium.

[0098] In some instances, the cathode active material layer of the cathode electrode comprises a cathode active material and optionally comprises one or more of a solid electrolyte, a conductive additive and / or a binder. In some instances, the cathode active material accounts for 30% to 98% by weight. If used, the solid electrolyte accounts for 5% to 50% by weight. If used, the conductive additive accounts for 0.1% to 30% by weight. If used, the binder accounts for 0.1% to 20% by weight. In some instances, the cathode electrode has a thickness of 10 μm to 500 μm (e.g., 40 μm).

[0099] In some examples, the cathode active material is selected from rock salt layered oxides, spinels, polyanion cathodes, olivine cathodes, other lithium transition metal oxides, surface coated and / or doped cathode materials, and low voltage cathode materials.

[0100] Examples of rock-salt layered oxides include LiCoO 2 、LiNi x Mn y Co 1-x-y O 2 、LiNi x Mny Al 1-x-y O 2 、LiNi x Mn 1-x O 2 , Li 1+x MO 2 Examples of spinels include LiMn 2 O 4 、LiNi 0.5 Mn 1.5 O 4 Examples of polyanion cathodes include LiV 2 (PO 4 ) 3 Examples of olivine include LiFePO 4 and LiMn x Fe 1-x PO 4 Examples of surface-coated and / or doped cathode materials include LiNbO 3 Coated LiMn 2 O 4 , Li 2 ZrO 3 or Li 3 PO 4 Coated LiNi x Mn y Co 1-x-y O 2 and Al-doped LiMn 2 O 4 Examples of low voltage cathode materials include lithiated metal oxides / sulfides (e.g. LiTiS 2 ), lithium sulfide and sulfur.

[0101] In some examples, the solid electrolyte is selected from a sulfide-based solid electrolyte, a halide-based solid electrolyte, and a hydride-based solid electrolyte. In some examples, the sulfide-based solid electrolyte is selected from a pseudo-binary sulfide, a pseudo-ternary sulfide, and a pseudo-quaternary sulfide. Examples of pseudo-binary sulfides include Li 2 SP 2 S 5 System (Li 3 PS 4 , Li 7 P 3 S 11 and Li 9.6 P 3 S 12 )、Li 2 S-SnS 2 System (Li 4 S N 4 )、Li2 S-SiS 2 System, Li 2 S-GeS 2 System, Li 2 SB 2 S 3 System, Li 2 S-Ga 2 S 3 System, Li 2 SP 2 S 3 System, and Li 2 S-Al 2 S 3 system.

[0102] Examples of pseudo-ternary sulfides include Li 2 O-Li 2 SP 2 S 5 System, Li 2 SP 2 S 5 -P 2 O 5 System, Li 2 SP 2 S 5 -GeS 2 System (Li 3.25 Ge 0.25 P 0.75 S 4 and Li 10 G 2 S 12 )、Li 2 SP 2 S 5 -LiX (X = F, C, Br, I) system (Li 6 PS 5 Br, Li 6 PS 5 Cl, L 7 P 2 S 8 I and Li 4 PS 4 I) Li 2 S-As 2 S 5 -SnS 2 System (Li 3.833 Sn 0.833 As 0.166 S 4 )、Li 2 SP 2 S 5 -Al2 S 3 System, Li 2 S-LiX-SiS 2 (X=F、Cl、Br、I) system, 0.4LiI·0.6Li 4 S N 4 and Li 11 Si 2 PS 12 Examples of pseudo-quaternary sulfides include Li 2 O-Li 2 SP 2 S 5 -P 2 O 5 System, Li 9.54 Si 1.74 P 1.44 S 11.7 Cl 0.3 , Li 7 P 2.9 Mn 0.1 S 10.7 I 0.3 and Li 10.35 [Sn 0.27 Si 1.08 ]P 1.65 S 12 .

[0103] Examples of halide-based solid electrolytes include Li 3 YC 6 , Li 3 InCl 6 , Li 3 Yb 6 , LiI, Li 2 CdCl 4 , Li 2 MgCl 4 , Li 2 CdI 4 , Li 2 ZnI 4 , Li 3 OCl. Examples of hydride-based solid electrolytes include LiBH 4 , LiBH 4 -LiX (X = Cl, Br or I), LiNH 2 , Li 2 NH, LiBH 4 -LiNH 2 , Li 3 AlH 6 In other examples, the solid electrolyte includes an electrolyte having low grain boundary resistance.

[0104] In some examples, the conductive additive is selected from carbon black, graphite, graphene, graphene oxide, Super P, acetylene black, carbon nanofibers, carbon nanotubes, and other electronically conductive additives.

[0105] In some examples, the binder includes polytetrafluoroethylene (PTFE), sodium carboxymethyl cellulose (CMG), styrene-butadiene rubber (SBR), poly(vinylidene fluoride) (PVDF), nitrile rubber (NBR), styrene-ethylene-butylene-styrene copolymer (SEBS), styrene-butadiene-styrene copolymer (SBS), or other suitable binders.

[0106] The foregoing description is essentially only exemplary and is absolutely not intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be limited thereto, because after studying the drawings, the specification and the following claims, other modifications will become apparent. It should be understood that one or more steps in the method may be implemented in different orders (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more features described with respect to any embodiment of the present disclosure may be implemented in any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the embodiments are not mutually exclusive, and the mutual replacement of one or more embodiments is still within the scope of the present disclosure.

[0107] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "on," "under," and "disposed." Unless explicitly described as "directly," when describing the relationship between a first element and a second element in the above disclosure, the relationship can be a direct relationship in which there are no other intervening elements between the first element and the second element, or an indirect relationship in which there are one or more intervening elements (spatially or functionally) between the first element and the second element. The phrase "at least one of A, B, and C" as used herein should be interpreted to mean a logical (A or B or C) using a non-exclusive logical OR, and should not be interpreted to mean "at least one A, at least one B, and at least one C."

[0108] In the drawings, the direction of the arrows, as shown by arrows, generally demonstrates the flow of information (such as data or instructions) related to the diagram. For example, when component A and component B exchange various information but the information transmitted from component A to component B is related to the diagram, the arrow may point from component A to component B. Such a unidirectional arrow does not mean that no other information is transmitted from component B to component A. In addition, for the information transmitted from component A to component B, component B may send a request for the information to component A or a receipt of the information.

Claims

1. A battery cell, comprising: C cathode electrodes comprising a cathode active material layer disposed on a cathode current collector; A anode electrode comprising an anode active material layer disposed on an anode current collector; and S spacers, wherein A, C and S are integers greater than 1, The anode active material layer comprises co-sputtered silicon and metal, wherein the metal is different from the silicon.

2. The battery cell according to claim 1, wherein the metal is selected from titanium (Ti), zirconium (Zr), Group 4 (IVb) metals, vanadium (V), niobium (Nb) and Group 5 (Vb) metals.

3. The battery cell according to claim 1, wherein: The metal includes titanium, The silicon accounts for 30 at % to 99.5 at % of the anode active material layer, and The titanium accounts for 0.5 at % to 70 at % of the anode active material layer. 4 . The battery cell according to claim 3 , wherein the anode current collector has a surface roughness of 2 μm to 12 μm.

5. The battery cell of claim 3, wherein the anode active material layer comprises a plurality of pillars. 6 . The battery cell of claim 5 , wherein the plurality of pillars have a height of 1.0 μm to 80 μm and a width of 1.0 μm to 80 μm.

7. The battery cell of claim 1, wherein the anode active material layer is planar and has a thickness between 2 μm and 80 μm.

8. The battery cell of claim 1, wherein the anode active material layer is planar and includes a plurality of protrusions.

9. The battery cell according to claim 8, wherein: The thickness of the anode active material layer is 2 μm to 80 μm; and The height of the plurality of protrusions is 0.1 μm to 20 μm.

10. The battery cell of claim 1, wherein the anode active material layer is planar and includes a plurality of recesses.

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