Display device
By adopting a combination of low refractive layer, color filter, capping layer and light control layer in the light conversion panel of the transparent display device, the problem of low transmittance of the existing transparent display device is solved, and a higher transmittance and a better transparent display effect is achieved.
Patent Information
- Application Number
- CN202411434760.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-11-01
- Filing Date
- 2024-10-15
- Publication Date
- 2025-05-06
AI Technical Summary
The transmittance area of the existing transparent display device has a low transmittance, which is difficult to meet the need to improve the transmittance.
A light conversion panel including a low refractive layer, a color filter, a capping layer and a light control layer is used to improve the transmittance of the transmission area by optimizing the structure and materials of these layers.
The transmittance of the transmission area is significantly improved and the effect of transparent display is enhanced.
Smart Images

Figure CN119947490A_ABST
Abstract
Description
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS
[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0149021 filed in the Korean Intellectual Property Office on November 1, 2023, the entire contents of which are incorporated herein by reference. Technical Field
[0003] Embodiments of the present disclosure relate to a transparent display device. For example, embodiments of the present disclosure relate to a transparent display device having improved light transmittance. Background Art
[0004] Various multimedia display devices such as televisions, mobile phones, tablet computers, and gaming devices include a display panel and a light conversion panel to provide image information to users.
[0005] The display panel includes a light emitting element and a pixel driving circuit driving the light emitting element. The light conversion panel may include a light controller including quantum dots, and the source light provided from the display panel is converted into light having different colors from each other by the light controller. The light conversion panel may include a color filter, and the color filter improves color purity and light extraction efficiency and reduces reflection of external light.
[0006] Recently, a transparent display device including a transmissive region in a display region is being developed. Research is being conducted to increase the transmittance of the transmissive region of the transparent display device. Summary of the invention
[0007] Embodiments of the present disclosure provide a transparent display device having improved transmittance in a transmission region thereof.
[0008] An embodiment of the present disclosure provides a display device, which includes a display area including a transmission area and a non-display area adjacent to the display area. The display device includes: a display panel, which includes a light-emitting element layer; and a light conversion panel, which is on the display panel. The light conversion panel includes: a base layer; a color filter, which is below the base layer; a low-refractive layer, which is below the color filter; a first capping layer, which is below the low-refractive layer; and a light control layer, which is below the color filter and includes a separation pattern, a plurality of light control parts separated from each other by the separation pattern, and a second capping layer below the separation pattern and the plurality of light control parts. The low-refractive layer is provided with a transmission opening, and the transmission opening is defined to pass through the low-refractive layer to correspond to the transmission area.
[0009] The color filter may not overlap with the transmissive area.
[0010] The base layer may include a lower surface adjacent to the display panel, and the lower surface of the base layer may be exposed through the transmissive opening.
[0011] The first capping layer may be directly on the lower surface of the base layer exposed through the transmission opening.
[0012] In the transmissive region, the second capping layer may be directly below the first capping layer.
[0013] The display device may further include: a filling layer between the display panel and the light conversion panel.
[0014] Each of the first capping layer and the second capping layer may include an inorganic material.
[0015] The low-refractive layer may include an organic material.
[0016] The partition pattern may surround the transmission region when viewed in a plane, the partition pattern may include a side surface adjacent to the transmission region, and the side surface of the partition pattern may be covered by the second capping layer.
[0017] The partition pattern and the plurality of light-controlling portions may not overlap with the transmission area.
[0018] The display area may further include a pixel area, and the pixel area may be spaced apart from the transmission area.
[0019] An embodiment of the present disclosure provides a display device, which includes a display area including a pixel area and a transmission area spaced apart from the pixel area, and a non-display area adjacent to the display area. The display device includes: a display panel, the display panel including a light-emitting element layer; and a light conversion panel, the light conversion panel on the display panel. The light conversion panel includes: a base layer; a color filter, the color filter does not overlap with the transmission area and is below the base layer; a low-refractive layer, the low-refractive layer is provided with a transmission opening, the transmission opening is defined as passing through the low-refractive layer, corresponding to the transmission area and arranged below the color filter; a first capping layer, the first capping layer is directly below the base layer exposed by the transmission opening; and a second capping layer, the second capping layer is below the first capping layer.
[0020] In the transmissive region, the second capping layer may be directly below the first capping layer.
[0021] The display device may further include: a partition pattern surrounding the transmission area and the pixel area and under the first capping layer; and a plurality of light-controlling portions under the first capping layer to correspond to the pixel area.
[0022] The separation pattern may include a side surface adjacent to the transmission region, and the side surface of the separation pattern may be covered by the second capping layer.
[0023] The partition pattern may include a lower surface adjacent to the display panel, and the lower surface of the partition pattern may be covered by the second capping layer.
[0024] The plurality of light-controlling portions may include a lower surface adjacent to the display panel, and the lower surfaces of the plurality of light-controlling portions may be covered by the second capping layer.
[0025] The display device may further include: a filling layer between the display panel and the light conversion panel.
[0026] Each of the first capping layer and the second capping layer may include an inorganic material.
[0027] The low-refractive layer may include an organic material.
[0028] According to the above, the display device includes the light conversion panel having improved transmittance, and thus, the transmittance in the transmission area is improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] The above and other features of embodiments of the present disclosure will become apparent by referring to the following detailed description when considered in conjunction with the accompanying drawings, in which:
[0030] Figure 1A is a perspective view of a display device according to an embodiment of the present disclosure;
[0031] Figure 1B is a cross-sectional view of a display device according to an embodiment of the present disclosure;
[0032] Figure 2 is a plan view of a display panel according to an embodiment of the present disclosure;
[0033] Figure 3 is an equivalent circuit diagram of a pixel according to an embodiment of the present disclosure;
[0034] Figure 4A is an enlarged plan view of a display area according to an embodiment of the present disclosure;
[0035] Figure 4B is an enlarged plan view of a display area according to an embodiment of the present disclosure;
[0036] Figure 5 is a cross-sectional view of a display device according to an embodiment of the present disclosure;
[0037] FIG. 6A to FIG. 6B is a cross-sectional view of a light-emitting layer according to various embodiments of the present disclosure;
[0038] Figure 7 is a cross-sectional view of a light conversion panel according to an embodiment of the present disclosure;
[0039] FIG. 8A to FIG. 8Cis a plan view of a color filter according to an embodiment of the present disclosure; and
[0040] Fig.8D is a plan view of a partition pattern according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0041] The embodiments of the present disclosure can be variously modified and implemented in many different forms, and therefore example embodiments will be illustrated in the accompanying drawings and described in more detail below. However, the present disclosure should not be limited to the specific disclosed form, and should be interpreted as including all modifications, equivalents or replacements included in the spirit and scope of the present disclosure.
[0042] As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
[0043] It will also be understood that the terms “include” and / or “including”, when used in this specification, specify the presence of stated features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups thereof.
[0044] In the present disclosure, it will be understood that when an element or layer (such as a region, portion) is referred to as being "on," "connected to" or "coupled to" another element or layer, the element or layer can be directly on, directly connected to or directly coupled to the other element or layer, or intervening elements or layers may be present.
[0045] For ease of description, spatially relative terms (such as “below,” “lower,” “above,” “upper,” etc.) may be used herein to describe the relationship of one element or feature to other elements or features as shown in the figures.
[0046] In the present disclosure, the term “on” may mean that a portion of an element is provided at a lower portion and an upper portion of another element.
[0047] In the present disclosure, when an element is referred to as being "directly on" another element, there are no intervening elements between the layer, film, region, or substrate and the other layer, film, region, or substrate. For example, the term "directly on..." may mean that two layers or two components are provided without an additional adhesive therebetween.
[0048] As used herein, the term "and / or" may include any and all combinations of one or more of the associated listed items.
[0049] It will be understood that although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Therefore, without departing from the spirit and scope of the present disclosure, the first element discussed below may be referred to as the second element, and vice versa.
[0050] Unless otherwise defined, all terms (including technical and scientific terms) used in this article have the same meaning as those commonly understood by ordinary technicians in the field to which the present disclosure belongs. It will also be understood that unless explicitly defined as such in this article, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and will not be interpreted in an idealized or overly formal sense.
[0051] Throughout the specification, like reference numerals refer to like elements. In the drawings, for effective description of technical contents, the thickness, proportion and size of components may be exaggerated.
[0052] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.
[0053] Figure 1A is a perspective view of a display device DD according to an embodiment of the present disclosure. Figure 1B is a cross-sectional view of a display device DD according to an embodiment of the present disclosure.
[0054] refer to Figure 1A , the display device DD may display an image through the display surface DD-IS. The display surface DD-IS may be substantially parallel to a plane defined by the first direction DR1 and the second direction DR2. An upper surface of a member of the display device DD at an uppermost position in the third direction DR3 may be defined as the display surface DD-IS.
[0055] The third direction DR3 may indicate a normal direction of the display surface DD-IS, for example, a thickness direction of the display device DD. A front surface (or upper surface) and a rear surface (or lower surface) of each layer or each unit may be distinguished from each other in the third direction DR3.
[0056] The display device DD may include a display area DA and a non-display area NDA. The unit pixel PXU may be provided in the display area DA, and the unit pixel PXU may not be arranged in the non-display area NDA. The non-display area NDA may be defined along an edge of the display surface DD-IS. The non-display area NDA may surround the display area DA. According to an embodiment, the non-display area NDA may be omitted or may be defined to be adjacent to only one side of the display area DA. Figure 1AA flat display device DD is shown as a representative example. However, the display device DD may have a bent shape, may be folded and / or rolled, and / or may be slidable from a housing.
[0057] Figure 1A The unit pixel PXU shown in FIG. 1 may define a pixel row and a pixel column. The unit pixel PXU may be a minimum repeating unit and may include at least one pixel. The unit pixel PXU may include a plurality of pixels providing light having colors different from each other.
[0058] refer to Figure 1B , the display device DD may include a display panel DP and a light conversion panel OP facing the display panel DP and spaced apart from the display panel DP. The display panel DP may be referred to as a lower display substrate, and the light conversion panel OP may be referred to as an upper display substrate. A set or predetermined cell gap may be defined between the display panel DP and the light conversion panel OP. The cell gap may be maintained by a sealing member SLM that couples the display panel DP and the light conversion panel OP together. The sealing member SLM may include an adhesive resin and an inorganic filler mixed with the adhesive resin. The sealing member SLM may also include other additives. The additives may include an amine-based curing agent and a photoinitiator. The additives may also include a silane-based additive and an acrylic-based additive. The sealing member SLM may include an inorganic-based material, such as a frit.
[0059] Each of the display panel DP and the light conversion panel OP may include a display area DA and a non-display area NDA defined therein that are the same as the display area DA and the non-display area NDA of the display device DD. Hereinafter, the display area DA of the display device DD may indicate the display area DA of each of the display panel DP and the light conversion panel OP, and the non-display area NDA of the display device DD may indicate the non-display area NDA of each of the display panel DP and the light conversion panel OP.
[0060] Figure 2 is a plan view of a display panel DP according to an embodiment of the present disclosure.
[0061] Figure 2 The arrangement relationship of the signal lines and the pixels PX11 to PXmn in a plan view is shown. The signal lines may include a plurality of gate lines GL1 to GLm and a plurality of data lines DL1 to DLn, where m and n are integers greater than 0.
[0062] Each of the pixels PX11 to PXmn can be connected to a corresponding one of the gate lines GL1 to GLm and a corresponding one of the data lines DL1 to DLn. Each of the pixels PX11 to PXmn can include a pixel driving circuit and a light-emitting element. Depending on the configuration of the pixel driving circuit of each of the pixels PX11 to PXmn, more types (or kinds) of signal lines can be provided in the display panel DP. As an example, each of the gate lines GL1 to GLm can include a corresponding i-th scan line SCLi (refer to Figure 3 ) and a corresponding i-th sense line SSLi (refer to Figure 3 ).
[0063] The gate driving circuit GDC can be integrated in the display panel DP by a silicon oxide gate driver circuit (OSG) process and / or an amorphous silicon gate driver circuit (ASG) process. The gate driving circuit GDC connected to the gate lines GL1 to GLm can be provided at one side of the non-display area NDA in the first direction DR1. The pads PD connected to the ends of the data lines DL1 to DLn can be provided at one side of the non-display area NDA in the second direction DR2.
[0064] Figure 3 is an equivalent circuit diagram of the pixel PXij according to an embodiment of the present disclosure.
[0065] Figure 3 Shows the pixel PXij connected to the i-th scan line SCLi, the i-th sense line SSLi, the j-th data line DLj, and the j-th reference line RLj as a representative example, where i and j are integers greater than 0, 0 < i ≤ m, 0 < j ≤ n. The pixel PXij can include a pixel circuit PC and a light-emitting element OLED electrically connected to the pixel circuit PC. The pixel circuit PC can include a first transistor T1, a second transistor T2, and a third transistor T3, and a capacitor Cst. The first transistor T1 to the third transistor T3 can be formed by a low-temperature polycrystalline silicon (LTPS) process and / or a low-temperature polycrystalline oxide (LTPO) process. Hereinafter, the first transistor T1 to the third transistor T3 will be described as N-type transistors. However, the first transistor T1 to the third transistor T3 should not be limited thereto or thereby. According to an embodiment, at least one selected from the first transistor T1 to the third transistor T3 can be a P-type transistor.
[0066] In the present embodiment, a pixel circuit PC including a first transistor T1, a second transistor T2, a third transistor T3 and a capacitor Cst is shown. However, the pixel circuit PC should not be limited thereto or thereby. The first transistor T1 may be referred to as a driving transistor, the second transistor T2 may be referred to as a switching transistor, and the third transistor T3 may be referred to as a sensing transistor. Depending on the embodiment, the pixel circuit PC may further include additional transistors and / or additional capacitors.
[0067] The light emitting element OLED may be an organic light emitting element or an inorganic light emitting element including an anode (first electrode) and a cathode (second electrode). The anode of the light emitting element OLED may receive a first voltage ELVDD via the first transistor T1, and the cathode of the light emitting element OLED may receive a second voltage ELVSS. The light emitting element OLED may emit light in response to the first voltage ELVDD and the second voltage ELVSS.
[0068] The first transistor T1 may include a drain electrode D1 receiving a first voltage ELVDD, a source electrode S1 connected to an anode of the light emitting element OLED, and a gate electrode G1 connected to the capacitor Cst. The first transistor T1 may control a driving current flowing from a voltage line of the first voltage ELVDD to the light emitting element OLED in response to a level of a voltage charged in the capacitor Cst.
[0069] The second transistor T2 may include a drain D2 connected to the jth data line DLj, a source S2 connected to the capacitor Cst, and a gate G2 receiving the i-th first scan signal SCi. The j-th data line DLj may receive the data voltage Vd. The second transistor T2 may apply the data voltage Vd to the first transistor T1 in response to the i-th first scan signal SCi.
[0070] The third transistor T3 may include a source S3 connected to the jth reference line RLj, a drain D3 connected to the anode of the light emitting element OLED, and a gate G3 receiving the i-th first sensing signal SSi. The jth reference line RLj may receive a reference voltage Vr. The third transistor T3 may initialize the capacitor Cst and the anode of the light emitting element OLED.
[0071] The capacitor Cst may be charged with a voltage corresponding to a difference between a voltage from the second transistor T2 and the first voltage ELVDD. The capacitor Cst may be connected to the gate G1 of the first transistor T1 and the anode of the light emitting element OLED.
[0072] Figure 4A is an enlarged plan view of a display area DA according to an embodiment of the present disclosure. Figure 4B is a display area DA according to an embodiment of the present disclosure (refer to Figure 4A ) is an enlarged plan view of the Figure 4B yes Figure 4A An enlarged view of a unit pixel PXU.
[0073] refer to Figure 4A , the unit pixel PXU may be provided in the first direction DR1 and the second direction DR2. In the present embodiment, the unit pixel PXU may include a first pixel, a second pixel, and a third pixel that emit light having different colors from each other. The first pixel, the second pixel, and the third pixel may emit red light, green light, and blue light, respectively. Figure 4A The first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B are respectively shown as representative examples of the first pixel, the second pixel, and the third pixel. The first pixel region PXA-R may be a region in which light generated by the first pixel is emitted outward, the second pixel region PXA-G may be a region in which light generated by the second pixel is emitted outward, and the third pixel region PXA-B may be a region in which light generated by the third pixel is emitted outward.
[0074] The peripheral area NPXA may be defined to surround the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B. In an embodiment, the peripheral area NPXA may be defined between the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B. The peripheral area NPXA may define the boundaries of the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, and may prevent or reduce color mixing between the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B.
[0075] The first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may be spaced apart from each other in the second direction DR2. Figure 4A A structure is shown in which the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B have substantially the same size as each other. However, this is only an example. In an embodiment, Figure 4A Each of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B shown in FIG. 1 may have a substantially square shape. However, the present disclosure should not be limited thereto or thereby.
[0076] The unit pixel PXU may include a transmission area TA spaced apart from each of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B in the first direction DR1. The transmission area TA may have a light transmittance higher than that of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. Figure 1A and Figure 1B ) includes a transmissive area TA defined in the display area DA, a transparent display device may be implemented. In this embodiment, the transparent display device may refer to a display device that allows a user to recognize an image displayed by emitting light from a light emitting element of the display device and simultaneously (e.g., synchronously) recognize light that passes through the display device through the transmissive area TA.
[0077] refer to Figure 4B , the unit pixel PXU may have a width W equal to or greater than about 600 μm and equal to or less than about 660 μm. PXU The width W of the unit pixel PXU PXU The width W of the unit pixel PXU in the first direction DR1 may correspond to the length of the unit pixel PXU in the first direction DR1. PXU It may be about 630 μm.
[0078] The width W of a portion of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B including the unit pixel PXU and the peripheral region NPXA surrounding the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B is NTA (e.g., the length in the first direction DR1) may be equal to or greater than about 180 μm and equal to or less than about 220 μm. A portion including the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B and a peripheral region NPXA surrounding the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B may be defined as a portion in which the first color filter CF1, the second color filter CF2, and the third color filter CF3 are provided (refer to Figure 5 As an example, the width W of the peripheral area NPXA including the first pixel area PXA-R, the second pixel area PXA-G and the third pixel area PXA-B and surrounding the first pixel area PXA-R, the second pixel area PXA-G and the third pixel area PXA-B is NTA It can be about 202 μm.
[0079] The size A of the transmission area TA TA The size A of the transmission area TA may be equal to or greater than about 55% and equal to or less than about 65% relative to the size of the unit pixel PXU. TA The size of the unit pixel PXU may be about 59%.
[0080] Figure 5 is a cross-sectional view of a display device DD according to an embodiment of the present disclosure. Fig. 6A and Figure 6Bis a cross-sectional view of a light-emitting layer EMLa and a light-emitting layer EMLb according to various embodiments of the present disclosure.
[0081] Figure 5 is along Figure 4A A cross-sectional view taken along line II' shown in FIG.
[0082] refer to Figure 5 , the display panel DP may include a first base layer BS1, a circuit layer CL, a light emitting element layer EDL, and a thin film encapsulation layer TFE. The circuit layer CL may be on the first base layer BS1. The light emitting element layer EDL may be on the circuit layer CL. The thin film encapsulation layer TFE may be on the light emitting element layer EDL and may encapsulate the light emitting element layer EDL.
[0083] The first base layer BS1 may include glass and / or a synthetic resin layer. The synthetic resin layer may include a thermosetting resin. The synthetic resin layer may be a polyimide-based resin layer. However, the synthetic resin layer should not be limited thereto or thereby. The synthetic resin layer may include at least one selected from acrylic-based resins, methacrylic-based resins, polyisoprene-based resins, vinyl resins, epoxy-based resins, urethane-based resins, cellulose-based resins, siloxane-based resins, polyamide-based resins, and perylene-based resins. The first base layer BS1 may include a glass substrate, a metal substrate, and / or an organic / inorganic composite material substrate.
[0084] The circuit layer CL may be on the first base layer BS1. The circuit layer CL may include an insulating layer, a semiconductor pattern, a conductive pattern, and a signal line. An insulating layer (e.g., an electrical insulating layer), a semiconductor layer, and a conductive layer (e.g., an electrical conductive layer) may be formed on the first base layer BS1 by a coating and / or deposition process. Then, the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned by several photolithography processes. In this way, a semiconductor pattern, a conductive pattern, and a signal line included in the circuit layer CL may be formed. The circuit layer CL may include a transistor, a buffer layer, and a plurality of insulating layers (e.g., a plurality of electrical insulating layers).
[0085] The light emitting element layer EDL may be on the circuit layer CL, and may include a light emitting element OLED and a pixel defining layer PDL.
[0086] The light emitting element OLED may include a first electrode EL1, a second electrode EL2 facing the first electrode EL1, and a light emitting layer EML between the first electrode EL1 and the second electrode EL2. The light emitting layer EML included in the light emitting element OLED may include an organic light emitting material and / or quantum dots as its light emitting material. The light emitting element OLED may also include a hole transport region HTR and / or an electron transport region ETR. In an embodiment, the light emitting element OLED may further include a capping layer above the second electrode EL2.
[0087] The pixel defining layer PDL may be on the circuit layer CL and may cover a portion of the first electrode EL1. The pixel defining layer PDL may be provided with a light emitting opening OH defined therethrough. At least a portion of the first electrode EL1 may be exposed through the light emitting opening OH of the pixel defining layer PDL. The first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may be defined to correspond to the portions of the first electrode EL1 exposed through the light emitting opening OH, respectively. The first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may correspond to the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, respectively. The area other than the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3 may be defined as a non-light emitting area.
[0088] In the present disclosure, the expression "two components correspond to each other" means that "two components overlap each other" when viewed in the thickness direction (e.g., the third direction DR3) of the display device DD. However, the two components should not be limited to having the same size. The first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 may overlap with the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, respectively. When viewed in a plane, the corresponding sizes of the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B may be larger than the corresponding sizes of the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 distinguished from each other by the pixel defining layer PDL. However, this is merely an example, and the present disclosure should not be limited to or thereby. According to an embodiment, respective sizes of the first, second, and third pixel regions PXA-R, PXA-G, and PXA-B may be substantially the same as respective sizes of the first, second, and third emission regions EA1, EA2, and EA3 distinguished from each other by the pixel defining layer PDL.
[0089] The first electrode EL1 may be on the circuit layer CL. The first electrode EL1 may be an anode or a cathode. According to an embodiment, the first electrode EL1 may be a pixel electrode. The first electrode EL1 may be a transmissive electrode, a transflective electrode, or a reflective electrode.
[0090] The hole transport region HTR may be on the first electrode EL1. The hole transport region HTR may be commonly provided in the first emission region EA1, the second emission region EA2, and the third emission region EA3 and the non-emission region. The hole transport region HTR may be provided as a common layer to be provided in Figure 4A. However, the present disclosure should not be limited thereto or thereby. According to an embodiment, the hole transport region HTR may be patterned into portions corresponding to the first light emitting region EA1, the second light emitting region EA2, and the third light emitting region EA3, respectively. The hole transport region HTR may include at least one selected from a hole transport layer, a hole injection layer, and an electron blocking layer.
[0091] The light-emitting layer EML may be on the hole transport region HTR. According to an embodiment, the light-emitting layer EML may be commonly provided in the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, as well as the non-light-emitting region. The light-emitting layer EML may completely overlap the hole transport region HTR and the electron transport region ETR. However, the present disclosure should not be limited to this or thereby. According to an embodiment, the light-emitting layer EML may be provided only in the light-emitting opening OH. For example, the light-emitting layer EML may be provided after being divided into a plurality of portions corresponding to the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, respectively, which are distinguished from each other by the pixel defining layer PDL.
[0092] The light emitting layer EML may generate source light. The light emitting layer EML may emit blue light. In the display device DD according to the present embodiment, the source light may be blue light. In an embodiment, when the light emitting layer EML is divided into a plurality of portions corresponding to the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3, all portions of the light emitting layer EML may emit blue light, or a plurality of portions of the light emitting layer EML corresponding to the first light emitting area EA1, the second light emitting area EA2, and the third light emitting area EA3, respectively, may emit light in wavelength ranges different from each other.
[0093] The light-emitting layer EML may have a single-layer structure of a single material, a single-layer structure of a plurality of different materials, or a multi-layer structure of a plurality of layers formed of different materials. The light-emitting layer EML may include fluorescent and / or phosphorescent materials. According to an embodiment, the light-emitting layer EML of the light-emitting element OLED may include an organic light-emitting material, a metal organic complex, and / or a quantum dot as its light-emitting material.
[0094] Fig. 6A and Figure 6B It is a light-emitting layer EML with a multi-layer structure (reference Figure 5 ) cross-sectional view.
[0095] refer to Fig. 6A, the light-emitting layer EMLa may include a first light-emitting layer EM1, a charge generation layer CGL, and a second light-emitting layer EM2 sequentially stacked in the third direction DR3. The first light-emitting layer EM1 and the second light-emitting layer EM2 may emit light having different colors from each other. As an example, the first light-emitting layer EM1 may emit blue light, and the second light-emitting layer EM2 may emit green light.
[0096] The charge generation layer CGL may be between the first light emitting layer EM1 and the second light emitting layer EM2. The charge generation layer CGL may provide electrons or holes to each of the first light emitting layer EM1 and the second light emitting layer EM2 to improve light emitting efficiency.
[0097] refer to Figure 6B The light emitting layer EMLb may include a first light emitting layer EM1a, a first charge generation layer CGLa, a second light emitting layer EM2a, a second charge generation layer CGLb, and a third light emitting layer EM3a sequentially stacked in the third direction DR3.
[0098] One of the first light-emitting layer EM1a, the second light-emitting layer EM2a, and the third light-emitting layer EM3a may emit light having a color different from the colors of the other two of the first light-emitting layer EM1a, the second light-emitting layer EM2a, and the third light-emitting layer EM3a. As an example, the first light-emitting layer EM1a and the third light-emitting layer EM3a may emit light having the same color, and the second light-emitting layer EM2a may emit light having a color different from the color of the light emitted from the first light-emitting layer EM1a. As an example, the first light-emitting layer EM1a and the third light-emitting layer EM3a may emit blue light, and the second light-emitting layer EM2a may emit green light.
[0099] The first charge generation layer CGLa may be between the first light-emitting layer EM1a and the second light-emitting layer EM2a. The second charge generation layer CGLb may be between the second light-emitting layer EM2a and the third light-emitting layer EM3a. The first charge generation layer CGLa may provide electrons or holes to each of the first light-emitting layer EM1a and the second light-emitting layer EM2a to improve light-emitting efficiency. In an embodiment, the second charge generation layer CGLb may provide electrons or holes to each of the second light-emitting layer EM2a and the third light-emitting layer EM3a to improve light-emitting efficiency.
[0100] Reference again Figure 5, the electron transport region ETR may be on the light-emitting layer EML. The electron transport region ETR may include at least one selected from an electron injection layer, an electron transport layer, and a hole blocking layer. The electron transport region ETR may be provided as a common layer to completely overlap with the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 and the pixel defining layer PDL. However, the present disclosure should not be limited to this or thereby. According to an embodiment, the electron transport region ETR may be divided into a plurality of parts, and the divided parts of the electron transport region ETR may be arranged to correspond to the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3, respectively.
[0101] The second electrode EL2 may be on the electron transport region ETR. The second electrode EL2 may be a common electrode. The second electrode EL2 may be a cathode or an anode. However, the second electrode EL2 should not be limited thereto or thereby. As an example, when the first electrode EL1 is an anode, the second electrode EL2 may be a cathode, and when the first electrode EL1 is a cathode, the second electrode EL2 may be an anode. The second electrode EL2 may be a transmissive electrode, a transflective electrode, or a reflective electrode.
[0102] The thin film encapsulation layer TFE may be on the second electrode EL2. When the light emitting element OLED includes a capping layer, the thin film encapsulation layer TFE may be on the capping layer. The thin film encapsulation layer TFE may protect the light emitting element layer EDL from moisture and / or oxygen, and may prevent or reduce foreign matter such as dust particles from entering the light emitting element layer EDL.
[0103] The thin film encapsulation layer TFE may include at least one inorganic layer, for example, two inorganic layers IL1 and IL2. The inorganic layer IL1 and the inorganic layer IL2 may include at least one of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide. The thin film encapsulation layer TFE may include at least one organic layer OL. The organic layer OL may include an organic polymer material formed of an acrylic-based resin. However, the organic layer OL should not be particularly limited.
[0104] The light conversion panel OP may be on the display panel DP. The light conversion panel OP may include a second base layer BS2, a color filter layer CFL, and a light control layer CCL. The color filter layer CFL may be below the second base layer BS2. The light control layer CCL may be below the color filter layer CFL.
[0105] The second base layer BS2 may provide a base surface on which the color filter layer CFL is provided. The second base layer BS2 may be referred to as a base layer. The second base layer BS2 may include a glass layer and / or a synthetic resin layer. The synthetic resin layer may include a thermosetting resin. The synthetic resin layer may be a polyimide-based resin layer. However, the synthetic resin layer should not be particularly limited. The synthetic resin layer may include at least one selected from acrylic-based resins, methacrylic-based resins, polyisoprene-based resins, vinyl resins, epoxy-based resins, urethane-based resins, cellulose-based resins, siloxane-based resins, polyamide-based resins, and perylene-based resins. In an embodiment, the second base layer BS2 may include a glass substrate, a metal substrate, and / or an organic / inorganic composite material substrate.
[0106] The color filter layer CFL may be below the second base layer BS2. The color filter layer CFL may include a plurality of color filters. Specifically, the color filter layer CFL may include a first color filter CF1 that transmits a second color light, a second color filter CF2 that transmits a third color light, and a third color filter CF3 that transmits a first color light. As an example, the first color filter CF1 may be a red color filter, the second color filter CF2 may be a green color filter, and the third color filter CF3 may be a blue color filter. According to an embodiment, the first color filter CF1 and the second color filter CF2 may be yellow color filters. The first color filter CF1 and the second color filter CF2 may be provided integrally with each other without being distinguished from each other.
[0107] The first color filter CF1 can increase the color purity by transmitting only light within a partial wavelength range of the second color light (e.g., light within the center wavelength range). The second color filter CF2 can increase the color purity by transmitting only light within a partial wavelength range of the third color light (e.g., light within the center wavelength range). The third color filter CF3 can increase the color purity by transmitting only light within a partial wavelength range of the first color light (e.g., light within the center wavelength range).
[0108] Each of the first color filter CF1, the second color filter CF2, and the third color filter CF3 may include a polymer photoresist and a pigment and / or a dye. The first color filter CF1 may include a red pigment and / or a dye, the second color filter CF2 may include a green pigment and / or a dye, and the third color filter CF3 may include a blue pigment and / or a dye. In an embodiment, the present disclosure should not be limited to this or thereby. According to an embodiment, the third color filter CF3 may not include a pigment or a dye. The third color filter CF3 may include a polymer photoresist and may not include a pigment or a dye. The third color filter CF3 may be transparent. The third color filter CF3 may be formed of a transparent photosensitive resin.
[0109] The first color filter CF1, the second color filter CF2, and the third color filter CF3 may correspond to the first pixel area PXA-R, the second pixel area PXA-G, and the third pixel area PXA-B, respectively. In an embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may correspond to the first light control part CCP1, the second light control part CCP2, and the third light control part CCP3, respectively.
[0110] In an embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 that transmit light having different colors from each other may overlap with each other to correspond to the peripheral area NPXA defined between the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. The first color filter CF1, the second color filter CF2, and the third color filter CF3 may overlap in a third direction DR3 (e.g., a thickness direction). The area where the first color filter CF1, the second color filter CF2, and the third color filter CF3 overlap with each other may be defined as a boundary between the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B that are adjacent to each other.
[0111] When viewed on a plane, the size of the area in which only the first color filter CF1 is provided may be smaller than the size of the first light control part CCP1. When viewed on a plane, the size of the area in which only the second color filter CF2 is provided may be smaller than the size of the second light control part CCP2. When viewed on a plane, the size of the area in which only the third color filter CF3 is provided may be smaller than the size of the third light control part CCP3. Therefore, the size of the first pixel area PXA-R may be smaller than the size of the first light control part CCP1, the size of the second pixel area PXA-G may be smaller than the size of the second light control part CCP2, and the size of the third pixel area PXA-B may be smaller than the size of the third light control part CCP3.
[0112] and Figure 5 , the color filter layer CFL may include a light blocking portion to define a boundary between the first color filter CF1, the second color filter CF2, and the third color filter CF3 adjacent to each other. The light blocking portion may be formed as a blue color filter, or may be formed of an organic light blocking material and / or an inorganic light blocking material including a black pigment and / or a black dye.
[0113] The color filter layer CFL may further include a low refractive layer LR. The low refractive layer LR may be below the first color filter CF1, the second color filter CF2, and the third color filter CF3. The low refractive layer LR may be on the light control layer CCL. The low refractive layer LR may be between the light control layer CCL and the first color filter CF1, the second color filter CF2, and the third color filter CF3 to serve as an optical functional layer that increases light extraction efficiency or prevents or reduces reflected light from entering the light control layer CCL. The low refractive layer LR may be a layer having a refractive index smaller than that of a layer adjacent thereto.
[0114] The low refractive layer LR may include an organic layer. As an example, the low refractive layer LR may include a polymer resin and inorganic particles. The low refractive layer LR may also include hollow particles and / or pores dispersed in the organic layer, and the refractive index of the low refractive layer LR may be controlled by the ratio of the hollow particles and / or pores.
[0115] The low refractive layer LR may have a single layer or a multi-layer structure. Figure 5 As shown in , the low-refractive layer LR may include a single layer.
[0116] The color filter layer CFL may further include a color filter capping layer CAP-CF. The color filter capping layer CAP-CF may be referred to as an upper capping layer or a first capping layer. The color filter capping layer CAP-CF may be below the low refractive layer LR. The color filter capping layer CAP-CF may prevent the entry of moisture and / or oxygen. The color filter capping layer CAP-CF may prevent or reduce the first color filter CF1, the second color filter CF2, and the third color filter CF3 and / or the low refractive layer LR from being exposed to moisture / oxygen.
[0117] The color filter capping layer CAP-CF may include an inorganic layer. As an example, the color filter capping layer CAP-CF may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride and / or a metal film having light transmittance. However, the color filter capping layer CAP-CF should not be limited thereto or thereby.
[0118] The light control layer CCL may be below the color filter layer CFL. The light control layer CCL may be provided at a lowermost position in the light conversion panel OP.
[0119] The light control layer CCL may include a separation pattern BMP and a first light control part CCP1, a second light control part CCP2, and a third light control part CCP3. When viewed in a plane, the separation pattern BMP may overlap the peripheral area NPXA. The first light control part CCP1, the second light control part CCP2, and the third light control part CCP3 included in the light control layer CCL may be spaced apart from each other. The first light control part CCP1, the second light control part CCP2, and the third light control part CCP3 may be spaced apart from each other by the separation pattern BMP. The first light control part CCP1, the second light control part CCP2, and the third light control part CCP3 may be provided in the openings BW-OH1, BW-OH2, and BW-OH3 defined by the separation pattern BMP, respectively, however, the present disclosure should not be limited thereto or thereby. The edges of the first light control part CCP1, the second light control part CCP2, and the third light control part CCP3 may overlap at least partially with the separation pattern BMP.
[0120] The separation pattern BMP may include a material having a transmittance (e.g., light transmittance) equal to or less than a set or predetermined value. As an example, the separation pattern BMP may include a light shielding material, for example, a black colorant. The separation pattern BMP may include a base resin and a black dye and / or pigment mixed with the base resin. As an example, the black colorant may include carbon black and / or a metal material such as chromium and / or chromium oxide. The separation pattern BMP may include at least one selected from propylene glycol methyl ether acetate, 3-methoxy-n-butyl acetate, an acrylate monomer, an acrylic monomer, an organic pigment, and an acrylate.
[0121] The first light control part CCP1, the second light control part CCP2 and the third light control part CCP3 may convert the wavelength of the source light provided from the light emitting element layer EDL, or may transmit the source light without converting the wavelength of the source light. The first light control part CCP1, the second light control part CCP2 and the third light control part CCP3 may be formed by an inkjet process. A liquid ink composition may be provided in the opening BW-OH1, the opening BW-OH2 and the opening BW-OH3, and the provided ink composition may be polymerized by a thermal curing process and / or a photocuring process to form the first light control part CCP1, the second light control part CCP2 and the third light control part CCP3. For example, the opening BW-OH1, the opening BW-OH2 and the opening BW-OH3 may have shapes corresponding to the shapes of the first light control part CCP1, the second light control part CCP2 and the third light control part CCP3, respectively.
[0122] The light control layer CCL may include a first light control part CCP1 including a first quantum dot that converts a first color light provided from the light emitting element OLED into a second color light, a second light control part CCP2 including a second quantum dot that converts the first color light into a third color light, and a third light control part CCP3 that transmits the first color light. The first light control part CCP1 may provide red light as the second color light, and the second light control part CCP2 may provide green light as the third color light. The third light control part CCP3 may transmit blue light as the first color light provided from the light emitting element OLED. As an example, the first quantum dot may be a red quantum dot, and the second quantum dot may be a green quantum dot.
[0123] In an embodiment, a quantum dot may refer to a crystal of a semiconductor compound. Since the band gap can be adjusted by controlling the size of the quantum dot or the ratio of elements in the compound for the quantum dot, light with one or more suitable wavelengths can be obtained. As an example, each quantum dot may have a diameter of about 1nm to about 10nm. Therefore, in the case of using the above-mentioned quantum dots (for example, quantum dots with different sizes or quantum dots with compounds with different ratios of elements from each other), a light-emitting element emitting light of one or more suitable wavelengths can be realized. In more detail, quantum dots can be implemented to emit red light, green light and / or blue light. In an embodiment, quantum dots can be configured to emit white light by a combination of light with various suitable colors.
[0124] Quantum dots can be synthesized by wet chemical processes, metal organic chemical vapor deposition processes, molecular beam epitaxy processes and / or similar processes. The wet chemical process is a method of growing quantum dot particle crystals after mixing an organic solvent with a precursor material. As the crystal grows, the organic solvent can naturally act as a dispersant that coordinates with the surface of the quantum dot crystal and can control the growth of the crystal. Therefore, the wet chemical process can control the growth of quantum dot particle crystals more conveniently and cost-effectively than vapor deposition methods such as metal organic chemical vapor deposition (MOCVD) processes and / or molecular beam epitaxy (MBE) processes.
[0125] The quantum dot may have a single structure in which the concentration of each element in the quantum dot is substantially uniform, or a core-shell dual structure. For example, the material contained in the core and the material contained in the shell may be different from each other. The shell of the quantum dot may be used as a protective layer to prevent or reduce chemical modification of the core to maintain semiconductor properties, and / or may be used as a charging layer to impart electrophoretic properties to the quantum dot. The shell may have a single layer or a multilayer structure. In the core / shell structure, the concentration of the element present in the shell may have a concentration gradient that decreases as the distance from the core (e.g., the center of the core) decreases.
[0126] The core of the quantum dot can be selected from Group II-VI compounds, Group III-VI compounds, Group I-III-VI compounds, Group III-V compounds, Group III-II-V compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.
[0127] The II-VI compound can be selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, binary compounds selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, Cd Select from the group consisting of ternary compounds of HgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and the group consisting of quaternary compounds of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and mixtures thereof.
[0128] The III-VI compounds may include compounds such as In 2 S 3 、In 2 Se 3 Binary compounds such as InGaS 3 、InGaSe 3 or any combination thereof.
[0129] The I-III-VI group compound may include a compound selected from AgInS, AgInS 2 、CuInS、CuInS 2 、AgGaS 2 、CuGaS 2 、CuGaO 2 、AgGaO 2 、AgAlO 2 and mixtures thereof consisting of a ternary compound and / or AgInGaS 2 、CuInGaS 2 etc. quaternary compounds.
[0130] The III-V compound may be selected from a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof, a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb and mixtures thereof, and a quaternary compound selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof. The III-V compound may also include a Group II metal. For example, InZnP may be selected as the III-II-V compound.
[0131] The IV-VI group compound can be selected from a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof, a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof, and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element can be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound can be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.
[0132] The Group IV element or compound may include a single element compound such as Si, Ge, etc., a binary compound such as SiC, SiGe, etc., or any suitable combination thereof.
[0133] Each element contained in a multi-element compound such as a binary compound, a ternary compound, and / or a quaternary compound may be present in a uniform or non-uniform concentration in the particle. For example, the above chemical formula means the type (or kind) of the element contained in the compound, and the ratio of the elements in the compound may be variable. As an example, AgInGaS 2 Can mean AgInxGa 1 -xS 2 (x is a real number between 0 and 1).
[0134] The shell of the quantum dot may include metal oxide and / or non-metal oxide, semiconductor compound, or a combination thereof as representative examples thereof.
[0135] The metal oxide and / or non-metal oxide may include SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , binary compounds of NiO and / or such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 However, the metal oxide and / or non-metal oxide should not be limited thereto or thereby.
[0136] In addition, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP and / or AlSb. However, the semiconductor compound should not be limited thereto or thereby.
[0137] The quantum dots may have a full width at half maximum (FWHM) of a light emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or, for example, about 30 nm or less. Within the above range, color purity and color reproducibility may be improved. In an embodiment, since the light emitted by the quantum dots may be emitted in all (e.g., substantially all) directions, the optical viewing angle may be improved.
[0138] In an embodiment, the shape of the quantum dot may have any suitable shape commonly used in the art. However, the shape of the quantum dot should not be particularly limited. In more detail, spherical, pyramidal, multi-arm, cubic nanoparticles, nanotubes, nanowires, nanofibers, nanosheets, etc. can be applied to the quantum dot.
[0139] As described above, quantum dots can control the color of emitted light according to their particle size, and therefore, quantum dots can have various suitable emission colors, such as blue, green and red. As the particle size of quantum dots decreases, the wavelength of light emitted from quantum dots becomes shorter. For example, in quantum dots with the same core, the particle size of quantum dots emitting green light may be smaller than the particle size of quantum dots emitting red light. In an embodiment, in quantum dots with the same core, the particle size of quantum dots emitting blue light may be smaller than the particle size of quantum dots emitting green light. However, the present disclosure should not be limited to this or thereby, and in quantum dots with the same core, the particle size can be adjusted according to the material of the shell and the thickness of the shell. In an embodiment, when quantum dots have various suitable emission colors (such as blue, red, green, etc.), the materials of the cores for quantum dots with different emission colors may be different from each other.
[0140] The light control layer CCL may further include a scatterer (eg, a light scatterer). The first light control part CCP1 may include first quantum dots and a scatterer, the second light control part CCP2 may include second quantum dots and a scatterer, and the third light control part CCP3 may include a scatterer without quantum dots.
[0141] The scatterer may be an inorganic particle. As an example, the scatterer may include a particle selected from TiO 2 、ZnO、Al 2 O 3 、SiO 2 and hollow silica particles. The scatterer may include a material selected from TiO 2 、ZnO、Al 2 O 3 、SiO 2 and hollow silica particles, or may include a material selected from TiO 2 、ZnO、Al 2 O 3 、SiO 2 and hollow silica particles (which are mixed with each other).
[0142] Each of the first light-control part CCP1, the second light-control part CCP2, and the third light-control part CCP3 may further include a base resin in which quantum dots and scatterers are dispersed. According to an embodiment, the first light-control part CCP1 may include first quantum dots and scatterers dispersed in the base resin, the second light-control part CCP2 may include second quantum dots and scatterers dispersed in the base resin, and the third light-control part CCP3 may include a scatterer dispersed in the base resin.
[0143] The base resin may be a medium in which quantum dots and scatterers are dispersed, and may include various suitable resin compositions commonly referred to as adhesives. As an example, the base resin may be an acrylate-based resin, a urethane-based resin, a silicone resin, and / or an epoxy-based resin. The base resin may be a transparent resin.
[0144] The light control layer CCL may also include a quantum dot capping layer CAP-QD below the first light control part CCP1, the second light control part CCP2, and the third light control part CCP3. The quantum dot capping layer CAP-QD may be referred to as a lower capping layer or a second capping layer. The quantum dot capping layer CAP-QD may prevent or reduce the entry of moisture and / or oxygen. The quantum dot capping layer CAP-QD may be below the first light control part CCP1, the second light control part CCP2, and the third light control part CCP3 to prevent or reduce the first light control part CCP1, the second light control part CCP2, and the third light control part CCP3 from being exposed to moisture / oxygen. In an embodiment, in addition to one surface of the first light control part CCP1, the second light control part CCP2, and the third light control part CCP3, the quantum dot capping layer CAP-QD may also cover one surface of the separation pattern BMP.
[0145] The quantum dot capping layer CAP-QD may include an inorganic layer. As an example, the quantum dot capping layer CAP-QD may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride and / or a light-transmitting metal film.
[0146] The display device DD may further include a filling layer FML between the display panel DP and the light conversion panel OP. The filling layer FML may be filled between the display panel DP and the light conversion panel OP. The filling layer FML may be used as a buffer layer between the display panel DP and the light conversion panel OP. The filling layer FML may have an impact absorption function and may increase the strength of the display device DD. The filling layer FML may be formed of a filling resin including a polymer resin. As an example, the filling layer FML may be formed of a resin such as an acrylic resin and / or an epoxy resin.
[0147] Figure 7 is a cross-sectional view of a light conversion panel OP according to an embodiment of the present disclosure. Figure 7 is along Figure 4A A cross-sectional view taken along line II-II' is shown in FIG.
[0148] The first color filter CF1, the second color filter CF2, and the third color filter CF3 may not overlap the transmission area TA. The first color filter CF1, the second color filter CF2, and the third color filter CF3 may be provided with an opening substantially corresponding to the transmission area TA.
[0149] The low refractive layer LR may be below the first color filter CF1, the second color filter CF2, and the third color filter CF3. The low refractive layer LR may be directly below the first color filter CF1, the second color filter CF2, and the third color filter CF3, and may cover the lower surface of the first color filter CF1, the second color filter CF2, and the third color filter CF3. The low refractive layer LR may cover the side surface of the opening corresponding to the transmission area TA defining the first color filter CF1, the second color filter CF2, and the third color filter CF3.
[0150] The transmission opening OP-LR may be defined by the low refractive layer LR to correspond to the transmission area TA. The lower surface LS-BS2 of the second base layer BS2 may be exposed by the transmission opening OP-LR defined through the low refractive layer LR. In the present embodiment, the lower surface LS-BS2 of the second base layer BS2 may indicate the display panel DP (refer to FIG. 1 ). Figure 5 ) adjacent to the surface. The second base layer BS2 may be referred to as a base layer.
[0151] The transmission opening OP-LR may be formed by removing a portion of the low-refractive layer LR in the transmission area TA using a photolithography process after forming the low-refractive layer LR on the entire portion of the first color filter CF1, the second color filter CF2, and the third color filter CF3. According to an embodiment, when the low-refractive layer LR includes a material to which the photolithography process is not applicable, the transmission opening OP-LR may be formed by an ashing process after coating a photoresist.
[0152] The low-refractive layer LR may include an organic layer. As an example, the low-refractive layer LR may include a polymer resin and inorganic particles. The low-refractive layer LR may also include hollow particles and / or pores dispersed in the organic layer.
[0153] According to the light conversion panel OP of the present disclosure, the low refractive layer LR including the organic layer may not be formed in the transmission area TA, and the transmission opening OP-LR corresponding to the transmission area TA may be formed by the low refractive layer LR. Therefore, the degradation of the light transmittance of the transmission area TA caused by the organic layer may be prevented or reduced. For example, the light transmittance of the transmission area TA may be improved.
[0154] The color filter capping layer CAP-CF may be on the lower surface LS-BS2 of the second base layer BS2 exposed by the transmission opening OP-LR. The color filter capping layer CAP-CF may be referred to as a first capping layer. In the transmission area TA, the color filter capping layer CAP-CF may be directly on the lower surface LS-BS2 of the second base layer BS2, and may cover the lower surface LS-BS2 of the second base layer BS2 exposed by the transmission opening OP-LR.
[0155] The color filter capping layer CAP-CF may include an inorganic layer. As an example, the color filter capping layer CAP-CF may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride and / or a metal film having light transmittance, however, the color filter capping layer CAP-CF should not be limited thereto or thereby.
[0156] The partition pattern BMP may be under the color filter capping layer CAP-CF. The partition pattern BMP may not overlap the transmission area TA. When viewed in a plane, the partition pattern BMP may surround the transmission area TA.
[0157] The quantum dot capping layer CAP-QD may be below the partition pattern BMP. The quantum dot capping layer CAP-QD may be referred to as a second capping layer. In the transmission area TA, the quantum dot capping layer CAP-QD may be below the color filter capping layer CAP-CF. In the transmission area TA, the quantum dot capping layer CAP-QD may be directly below the color filter capping layer CAP-CF.
[0158] The quantum dot capping layer CAP-QD may include an inorganic layer. As an example, the quantum dot capping layer CAP-QD may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride and / or a light-transmitting metal film.
[0159] According to the light conversion panel OP of the present disclosure, the color filter capping layer CAP-CF and the quantum dot capping layer CAP-QD including only an inorganic layer may be below the second base layer BS2 in the transmission area TA, and the low refractive layer LR including an organic layer may not be provided. Therefore, the light transmittance of the transmission area TA may be improved compared to when the low refractive layer LR including an organic layer is provided in the transmission area TA.
[0160] Table 1 shows relative values of light transmittance according to the thickness of the low refractive layer LR. The relative values of Table 1 represent the brightness of light transmitted through the low refractive layer LR relative to the brightness of source light.
[0161] Table 1
[0162]
[0163]
[0164] Referring to Table 1, as the thickness of the low refractive layer LR increases, the brightness of light transmitted through the low refractive layer LR decreases. In more detail, when the thickness of the low refractive layer LR increases by about 0.4 μm, the brightness of the emitted light decreases to about 97%.
[0165] Since the low refraction layer LR reduces the light transmittance of the transmission area TA, the light conversion panel OP according to the present disclosure can improve the light transmittance of the transmission area TA by removing the low refraction layer LR in the transmission area TA.
[0166] FIG. 8A to FIG. 8C is a plan view of a first color filter CF1, a second color filter CF2, and a third color filter CF3 according to an embodiment of the present disclosure. Fig.8D is a plan view of a separation pattern BMP according to an embodiment of the present disclosure.
[0167] Fig. 8A The figure shows a pixel unit PXU (reference Figure 4A ) in the first color filter CF1. The first color filter CF1 may overlap the first pixel region PXA-R. The first color filter CF1 may not overlap the second pixel region PXA-G and the third pixel region PXA-B. The first color filter CF1 may include a first G opening OP1-G corresponding to the second pixel region PXA-G and a first B opening OP1-B corresponding to the third pixel region PXA-B.
[0168] When viewed in a plane, the width W1 of the first color filter CF1 provided at the left and right sides (in the first direction DR1) of the second pixel region PXA-G is G The width W1 of the first color filter CF1 provided at the left and right sides (in the first direction DR1) of the second pixel region PXA-G may be equal to or greater than about 16 μm and equal to or less than about 22 μm. G It can be about 19 μm.
[0169] When viewed in a plane, the width W1 of the first color filter CF1 provided at the left and right sides of the third pixel region PXA-B is B may be equal to or greater than about 21.5 μm and equal to or less than about 27.5 μm. As an example, the width W1 of the first color filter CF1 provided at the left and right sides (in the first direction DR1) of the third pixel region PXA-B B It may be about 24.5 μm.
[0170] When viewed in a plane, a length L1 of the first color filter CF1 between the second pixel region PXA-G and the third pixel region PXA-B may be equal to or greater than about 27 μm and equal to or less than about 33 μm. As an example, a length L1 of the first color filter CF1 between the second pixel region PXA-G and the third pixel region PXA-B may be about 30 μm.
[0171] Figure 8B The figure shows a pixel unit PXU (reference Figure 4A) in the second color filter CF2. The second color filter CF2 may overlap the second pixel region PXA-G. The second color filter CF2 may not overlap the first pixel region PXA-R and the third pixel region PXA-B. The second color filter CF2 may include a second R opening OP2-R corresponding to the first pixel region PXA-R and a second B opening OP2-B corresponding to the third pixel region PXA-B.
[0172] When viewed in a plane, the width W2 of the second color filter CF2 provided at the left and right sides (in the first direction DR1) of the first pixel region PXA-R is R The width W2 of the second color filter CF2 provided at the left and right sides (in the first direction DR1) of the first pixel region PXA-R may be equal to or greater than about 11 μm and equal to or less than about 17 μm. R It may be about 14 μm.
[0173] When viewed in a plane, the width W2 of the second color filter CF2 provided at the left and right sides of the third pixel region PXA-B is B The width W2 of the second color filter CF2 provided at the left and right sides (in the first direction DR1) of the third pixel region PXA-B may be equal to or greater than about 11 μm and equal to or less than about 17 μm. B It may be about 14 μm.
[0174] When viewed in a plane, a length L2 of the second color filter CF2 between the first pixel region PXA-R and the third pixel region PXA-B may be equal to or greater than about 15.5 μm and equal to or less than about 21.5 μm. As an example, a length L2 of the second color filter CF2 between the first pixel region PXA-R and the third pixel region PXA-B may be about 18.5 μm.
[0175] Figure 8C The figure shows a pixel unit PXU (reference Figure 4A ) in the third color filter CF3. The third color filter CF3 may overlap with the third pixel region PXA-B. The third color filter CF3 may not overlap with the first pixel region PXA-R and the second pixel region PXA-G. The third color filter CF3 may include a third R opening OP3-R corresponding to the first pixel region PXA-R and a third G opening OP3-G corresponding to the second pixel region PXA-G.
[0176] When viewed in a plane, the width W3 of the third color filter CF3 provided at the left and right sides (in the first direction DR1) of the first pixel region PXA-R is RThe width W3 of the third color filter CF3 provided at the left and right sides (in the first direction DR1) of the first pixel region PXA-R may be equal to or greater than about 21 μm and equal to or less than about 27 μm. R It may be about 24 μm.
[0177] When viewed in a plane, a width W3 of the third color filter CF3 provided at the left and right sides of the second pixel region PXA-G is G The width W3 of the third color filter CF3 provided at the left and right sides (in the first direction DR1) of the second pixel region PXA-G may be equal to or greater than about 21 μm and equal to or less than about 27 μm. G It may be about 24 μm.
[0178] When viewed in a plane, a length L3 of the third color filter CF3 between the first pixel region PXA-R and the second pixel region PXA-G may be equal to or greater than about 21 μm and equal to or less than about 27 μm. As an example, a length L3 of the third color filter CF3 between the first pixel region PXA-R and the second pixel region PXA-G may be about 24 μm.
[0179] Fig.8D It shows that FIG. 8A to FIG. 8C The same area shown in FIG. 1 is included in a unit pixel PXU (reference Figure 4A ) in the partition pattern BMP. The partition pattern BMP may not overlap with the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. The partition pattern BMP may include an opening OP-R, an opening OP-G, and an opening OP-B corresponding to the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B, respectively.
[0180] When viewed in a plane, a width W4 of the separation pattern BMP surrounding the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B in the first direction DR1 may be equal to or greater than about 11 μm and equal to or less than about 17 μm. As an example, a width W4 of the separation pattern BMP surrounding the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B in the first direction DR1 may be about 14 μm.
[0181] When viewed in a plane, the length L4 of the separation pattern BMP surrounding the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B in the second direction DR2 may be equal to or greater than about 11 μm and equal to or less than about 17 μm. As an example, the length L4 of the separation pattern BMP surrounding the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B in the second direction DR2 may be about 14 μm.
[0182] Although the embodiments of the present disclosure have been described, it should be understood that the present disclosure should not be limited to these embodiments, but a person skilled in the art can make various suitable changes and modifications within the spirit and scope of the present disclosure as defined in the appended claims. Therefore, the disclosed subject matter should not be limited to any single embodiment described herein, and the scope of the present disclosure should be determined according to the appended claims and their equivalents.
Claims
1. A display device, comprising a display area including a transmissive area and a non-display area adjacent to the display area, the display device comprising: A display panel, the display panel comprising a light emitting element layer; as well as A light conversion panel, the light conversion panel is on the display panel, and the light conversion panel includes: Base layer; a color filter, the color filter being below the base layer; a low-refractive layer, the low-refractive layer being below the color filter; A first capping layer, the first capping layer being below the low-refractive layer; and a light control layer under the color filter and including a separation pattern, a plurality of light control portions spaced apart from each other by the separation pattern, and a second capping layer under the separation pattern and the plurality of light control portions, Wherein, the low-refractive layer is provided with a transmission opening, and the transmission opening is defined through the low-refractive layer to correspond to the transmission area.
2. The display device according to claim 1, wherein: The color filter does not overlap the transmission area.
3. The display device according to claim 1, wherein: The base layer includes a lower surface adjacent to the display panel, and the lower surface of the base layer is exposed through the transmissive opening.
4. The display device according to claim 3, wherein: The first capping layer is directly on the lower surface of the base layer exposed through the transmission opening.
5. The display device according to claim 1, wherein: In the transmissive region, the second capping layer is directly below the first capping layer.
6. The display device according to claim 1, further comprising: A filling layer is provided between the display panel and the light conversion panel.
7. The display device according to claim 1, wherein: Each of the first capping layer and the second capping layer includes an inorganic material.
8. The display device according to claim 1, wherein: The low-refractive layer includes an organic material.
9. The display device according to claim 1, wherein: The partition pattern surrounds the transmission area when viewed in a plane, the partition pattern includes a side surface adjacent to the transmission area, and the side surface of the partition pattern is covered by the second capping layer.
10. The display device according to claim 1, wherein: The partition pattern and the plurality of light-controlling portions do not overlap the transmission area.
11. The display device according to claim 1, wherein: The display area further includes a pixel area, and the pixel area is spaced apart from the transmission area.
12. A display device, comprising a display region including a pixel region and a transmissive region spaced apart from the pixel region, and a non-display region adjacent to the display region, the display device comprising: A display panel, the display panel comprising a light emitting element layer; as well as A light conversion panel, the light conversion panel is on the display panel, and the light conversion panel includes: Base layer; a color filter not overlapping the transmissive region and below the base layer; a low-refractive layer provided with a transmission opening defined through the low-refractive layer, corresponding to the transmission area and below the color filter; a first capping layer directly below the base layer exposed through the transmissive opening; and A second capping layer is below the first capping layer.
13. The display device according to claim 12, wherein: In the transmissive region, the second capping layer is directly below the first capping layer.
14. The display device according to claim 12, further comprising: a partition pattern surrounding the transmission area and the pixel area and under the first capping layer; as well as A plurality of light-controlling portions are provided under the first capping layer to correspond to the pixel areas.
15. The display device according to claim 14, wherein: The partition pattern includes a side surface adjacent to the transmission area, and the side surface of the partition pattern is covered by the second capping layer.
16. The display device according to claim 14, wherein: The partition pattern includes a lower surface adjacent to the display panel, and the lower surface of the partition pattern is covered by the second capping layer.
17. The display device according to claim 14, wherein: The plurality of light-controlling portions include lower surfaces adjacent to the display panel, and the lower surfaces of the plurality of light-controlling portions are covered by the second capping layer.
18. The display device according to claim 12, further comprising: A filling layer is provided between the display panel and the light conversion panel.
19. The display device according to claim 12, wherein: Each of the first capping layer and the second capping layer includes an inorganic material.
20. The display device according to claim 12, wherein: The low-refractive layer includes an organic material.
Citation Information
Patent Citations
Method and apparatus for broadcasting qoe configuration in a wireless communication system
KR1020230149021A