Display panel, preparation method, brightness compensation method and display device

Abstract

The invention provides a display panel which is applied to the technical field of display, and the display panel comprises a first substrate; the second substrate is arranged opposite to the first substrate; the plurality of light emitting units are arranged on the first substrate base plate and are positioned between the first substrate base plate and the second substrate base plate; the black matrix is arranged on the second substrate body and located between the second substrate body and the first substrate body; and the plurality of photosensitive elements are arranged on the side, deviating from the second substrate, of the black matrix, and the orthographic projection of the black matrix on the second substrate covers the orthographic projections of the plurality of photosensitive elements on the second substrate. The invention further provides a preparation method of the display panel, a brightness compensation method and a display device.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and more specifically, to a display panel, a preparation method, a brightness compensation method and a display device. Background Art

[0002] Self-luminous display devices have advantages such as high color gamut, high brightness, and fast response speed. However, as the use time increases, due to the loss of luminescent materials and uneven process, it is easy to cause uneven brightness of the light-emitting unit. In the example, a light detection component is set under the light-emitting structure of the OLED (organic light-emitting diode) to detect the brightness of the OLED pixel, so as to realize the brightness self-compensation function of the OLED display device. However, the detection accuracy of the pixel brightness in the example is low, which is difficult to meet the needs of high-precision detection. Summary of the invention

[0003] In view of this, the present disclosure provides a display panel, a manufacturing method, a brightness compensation method and a display device.

[0004] One aspect of the present disclosure provides a display panel, comprising:

[0005] a first substrate base plate;

[0006] A second base substrate, arranged opposite to the first base substrate;

[0007] A plurality of light emitting units are disposed on the first base substrate and located between the first base substrate and the second base substrate;

[0008] A black matrix is ​​disposed on the second base substrate and is located between the second base substrate and the first base substrate;

[0009] A plurality of photosensitive elements are arranged on a side of the black matrix away from the second base substrate, and the orthographic projection of the black matrix on the second base substrate covers the orthographic projection of the plurality of photosensitive elements on the second base substrate.

[0010] According to an embodiment of the present disclosure, a plurality of light-emitting units are arranged in an array along a first direction and a second direction to form a plurality of rows of light-emitting units and a plurality of columns of light-emitting units; a plurality of photosensitive elements are arranged in an array along a first direction and a second direction to form a plurality of rows of photosensitive elements and a plurality of columns of photosensitive elements;

[0011] A row of photosensitive elements is arranged between two adjacent rows of light-emitting units; and / or a column of photosensitive elements is arranged between two adjacent columns of light-emitting units.

[0012] According to an embodiment of the present disclosure, a plurality of light-emitting units include a target light-emitting unit located in the i-th row and the j-th column. In the circumferential direction of the target light-emitting unit, at least two photosensitive elements for detecting the light intensity information of the target light-emitting unit are arranged. The at least two photosensitive elements are staggered with the target light-emitting unit in the first direction and the second direction, and i and j are both positive integers.

[0013] According to an embodiment of the present disclosure, the plurality of photosensitive elements include a first photosensitive element located at the i-th row and j-th column, a second photosensitive element located at the i-th row and j+1-th column, a third photosensitive element located at the i+1-th row and j-th column, and a fourth photosensitive element located at the i+1-th row and j+1-th column, and the first photosensitive element, the second photosensitive element, the third photosensitive element and the fourth photosensitive element are arranged at intervals along the circumference of the target light-emitting unit.

[0014] According to an embodiment of the present disclosure, the first photosensitive element, the target light-emitting unit and the second photosensitive element are alternately arranged in the first direction; and / or,

[0015] The third photosensitive element, the target light-emitting unit and the fourth photosensitive element are alternately arranged in the first direction; and / or,

[0016] The first photosensitive element, the target light emitting unit and the third photosensitive element are alternately arranged in the second direction; and / or,

[0017] The second photosensitive element, the target light emitting unit and the fourth photosensitive element are alternately arranged in the second direction.

[0018] According to an embodiment of the present disclosure, the black matrix includes a plurality of first light shielding portions extending along a first direction and a plurality of second light shielding portions extending along a second direction, the plurality of first light shielding portions are arranged along the second direction, the plurality of second light shielding portions are arranged along the first direction, and the first direction and the second direction are arranged crosswise;

[0019] The orthographic projections of the plurality of photosensitive elements on the second base substrate are respectively located in the orthographic projections of the plurality of first light shielding portions and the intersection positions of the plurality of first light shielding portions on the second base substrate.

[0020] According to an embodiment of the present disclosure, the photosensitive element includes at least one of the following: a stacked metal layer and a semiconductor silicon layer, a stacked photosensitive film layer and a semiconductor silicon layer, a stacked metal layer, a silicon oxide layer and a semiconductor silicon layer, and a stacked photosensitive film layer, a silicon dioxide layer and a semiconductor silicon layer.

[0021] According to an embodiment of the present disclosure, a metal layer is disposed on a side of the black matrix facing away from the second substrate, the metal layer includes a plurality of metal strips extending along a first direction, and the plurality of metal strips are arranged along a second direction;

[0022] A semiconductor silicon layer is disposed on a side of the metal layer away from the black matrix, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction;

[0023] A plurality of metal strips and a plurality of semiconductor silicon strips are stacked at cross positions respectively, and the photosensitive element comprises a first portion of the metal strips and a second portion of the semiconductor silicon strips stacked at the cross positions.

[0024] According to an embodiment of the present disclosure, a metal layer is disposed on a side of the black matrix facing away from the second substrate, the metal layer includes a plurality of metal strips extending along a first direction, and the plurality of metal strips are arranged along a second direction;

[0025] A silicon oxide layer is disposed on the side of the metal layer facing away from the black matrix;

[0026] A semiconductor silicon layer is disposed on the side of the silicon oxide layer facing away from the metal layer, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; the orthographic projection of the silicon oxide layer on the second substrate covers the orthographic projection of the semiconductor silicon layer on the second substrate;

[0027] A plurality of metal strips and a plurality of semiconductor silicon strips are stacked at cross positions respectively, and the photosensitive element comprises a first portion of the metal strips stacked at the cross positions, a second portion of the semiconductor silicon strips and a third portion of the silicon oxide layer.

[0028] According to an embodiment of the present disclosure, the display panel further includes:

[0029] The insulating layer is located between the black matrix and the photosensitive element. A plurality of grooves extending along a first direction are formed on a side of the insulating layer away from the black matrix. The plurality of grooves are arranged along a second direction. The plurality of metal strips are respectively located in the plurality of grooves.

[0030] According to an embodiment of the present disclosure, a photosensitive film layer is disposed on a side of the black matrix facing away from the second substrate, the photosensitive film layer includes a plurality of photosensitive film strips extending along a first direction, and the plurality of photosensitive film strips are arranged along a second direction;

[0031] A semiconductor silicon layer is disposed on a side of the photosensitive film layer away from the black matrix, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction;

[0032] A plurality of photosensitive film strips and a plurality of semiconductor silicon strips are stacked at cross positions respectively, and the photosensitive element comprises a first portion of the photosensitive film strips and a second portion of the semiconductor silicon strips stacked at the cross positions.

[0033] According to an embodiment of the present disclosure, a photosensitive film layer is disposed on a side of the black matrix facing away from the second substrate, the photosensitive film layer includes a plurality of photosensitive film strips extending along a first direction, and the plurality of photosensitive film strips are arranged along a second direction;

[0034] A silicon oxide layer is disposed on the side of the photosensitive film layer facing away from the black matrix;

[0035] A semiconductor silicon layer is disposed on the side of the silicon oxide layer away from the photosensitive film layer, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; the orthographic projection of the silicon oxide layer on the second substrate covers the orthographic projection of the semiconductor silicon layer on the second substrate;

[0036] A plurality of photosensitive film strips and a plurality of semiconductor silicon strips are stacked at cross positions respectively, and the photosensitive element comprises a first portion of the photosensitive film strips stacked at the cross positions, a second portion of the semiconductor silicon strips and a third portion of the silicon oxide layer.

[0037] According to an embodiment of the present disclosure, the display panel further includes:

[0038] The insulating layer is located between the black matrix and the photosensitive element. A plurality of grooves extending along a first direction are formed on a side of the insulating layer away from the black matrix. The plurality of grooves are arranged along a second direction. The plurality of photosensitive film strips are respectively located in the plurality of grooves.

[0039] Another aspect of the present disclosure provides a brightness compensation method for a display panel, wherein the display panel includes a plurality of light-emitting units and a plurality of light-sensing elements;

[0040] Methods include:

[0041] For a target light-emitting unit among the multiple light-emitting units, obtaining light intensity information detected by at least two target photosensitive elements of the target light-emitting unit respectively;

[0042] Compare the luminous intensity information detected by the at least two target photosensitive elements with the luminous intensity standard values ​​preset for the at least two target photosensitive elements;

[0043] In response to the difference between the luminous intensity information detected by at least two target photosensitive elements and the luminous intensity standard value being greater than a preset first threshold, acquiring the luminous intensity information of the adjacent luminous unit adjacent to the target luminous unit; and

[0044] In response to the luminous intensity information of the adjacent luminous unit being normal, the luminous intensity of the target luminous unit is compensated according to the difference between the luminous intensity information detected by at least two target photosensitive elements and the luminous intensity standard value.

[0045] Another aspect of the present disclosure provides a method for preparing a display panel, comprising:

[0046] forming a plurality of light emitting units on a first base substrate;

[0047] forming a black matrix on the second substrate;

[0048] A plurality of photosensitive elements are formed on a side of the black matrix away from the second base substrate, and the orthographic projection of the black matrix on the second base substrate covers the orthographic projection of the plurality of photosensitive elements on the second base substrate;

[0049] The first base substrate and the second base substrate are assembled to form a display panel. In the display panel, a plurality of photosensitive elements are located on a side of the black matrix close to the light-emitting unit.

[0050] Another aspect of the present disclosure provides a display device including the above-mentioned display panel.

[0051] According to the embodiment of the present disclosure, a photosensitive element is arranged on the side of the black matrix of the display panel away from the second substrate, for detecting the light-emitting information of the light-emitting unit. Since the photosensitive element is arranged below the black matrix, the brightness detected by the light-emitting unit is not attenuated, so that the light-emitting brightness of the light-emitting unit detected by the photosensitive element is consistent with the display brightness of the light-emitting unit or there is a stable relationship, and the detection accuracy is high. In addition, the photosensitive element is covered by the black matrix, which does not affect the display resolution, transmittance and brightness of the display panel.

[0052] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The above and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0054] Figure 1 is a front schematic diagram of a display panel according to an embodiment of the present disclosure.

[0055] Figure 2 is a partial plan view of a display panel according to an embodiment of the present disclosure.

[0056] Figure 3A-3C Schematic diagram of the principle of Schottky barrier formation according to an embodiment of the present disclosure.

[0057] Figure 4 It is a partial schematic side view of a display panel in which the photosensitive element is a MOS type device according to an embodiment of the present disclosure.

[0058] Figure 5It is a partial plan view of a display panel in which the photosensitive element is a MOS type device according to an embodiment of the present disclosure.

[0059] Figure 6 is a flow chart of a method for preparing a display panel according to an embodiment of the present disclosure.

[0060] Figure 7 Schematic diagram of a method for preparing a photosensitive element of a display panel according to an embodiment of the present disclosure.

[0061] Figure 8 It is a plan view schematic diagram of a method for preparing a photosensitive element of a display panel according to an embodiment of the present disclosure.

[0062] Fig. 9 is a schematic diagram of a method for preparing a photosensitive element of a display panel according to another embodiment of the present disclosure.

[0063] Fig.10 is a flow chart of a brightness compensation method for a display panel according to an embodiment of the present disclosure.

[0064] Fig.11 is a schematic diagram of a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0065] The technical solution of the present disclosure is further specifically described below through examples and in conjunction with the accompanying drawings. In the specification, the same or similar figure numbers indicate the same or similar parts. The following description of the embodiments of the present disclosure with reference to the accompanying drawings is intended to explain the overall inventive concept of the present disclosure and should not be construed as a limitation of the present disclosure.

[0066] In addition, in the following detailed description, for the purpose of explanation, numerous specific details are set forth to provide a comprehensive understanding of the embodiments of the present disclosure. However, it is apparent that one or more embodiments may also be implemented without these specific details.

[0067] It should be understood that, although the terms first, second, etc. can be used here to describe different elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the scope of the exemplary embodiment, the first element can be named as the second element, and similarly, the second element can be named as the first element. The term "and / or" as used herein includes any combination and all combinations of one or more related listed items.

[0068] It should be understood that when an element or layer is referred to as being "formed on" another element or layer, the element or layer may be formed directly or indirectly on the other element or layer. That is, for example, there may be an intermediate element or intermediate layer. In contrast, when an element or layer is referred to as being "formed directly on" another element or layer, there are no intermediate elements or intermediate layers. Other words used to describe the relationship between elements or layers (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.) should be interpreted in a similar manner.

[0069] In this document, directional expressions "first direction" and "second direction" are used to describe different directions along the pixel region, for example, the longitudinal direction and the transverse direction of the pixel region. It should be understood that such expressions are only exemplary descriptions and are not limitations of the present disclosure.

[0070] In this document, unless otherwise specified, the expression "located in the same layer" generally means that the first component and the second component can use the same material and can be formed by the same patterning process. The expression "A and B are connected as one" means that component A and component B are formed as one, that is, they generally include the same material and form a structurally continuous integral component.

[0071] With the development of self-luminous display technology, smartphones and watches equipped with self-luminous display devices have become ubiquitous in people's lives. Self-luminous display devices have advantages such as high color gamut, high brightness, and fast response speed, but as the use time increases, there is a problem of abnormal pixel brightness decay.

[0072] For example, one of the examples discloses a technology of setting a light detection component under the OLED light-emitting structure to realize the function of self-compensation of brightness of the OLED display device (De-Mura). This method detects the light intensity signal under the light-emitting structure. Due to the OLED manufacturing process, the light intensity signal under the light-emitting structure is not necessarily positively correlated or linearly related to the light intensity signal of the OLED display, that is, the light intensity signal above the light-emitting structure. When the process uniformity of the OLED light-emitting structure is poor, the relationship between the light intensity above and below each light-emitting structure is not uniform. At this time, brightness compensation for the OLED light-emitting structure may cause counter-effects. In addition, when the light intensity signal is detected below the light-emitting structure, the detected light intensity is attenuated, and the detection accuracy is limited.

[0073] Another example discloses a technology of setting a photosensitive thin film transistor between the substrate and the OLED light-emitting unit to detect the brightness of the OLED pixel. However, setting a photosensitive thin film transistor between the OLED substrate and the light-emitting unit will increase the parasitic capacitance of the driving circuit, thereby causing poor grayscale image quality.

[0074] In order to solve the above technical problems, the present disclosure provides a display panel, including: a first substrate; a second substrate, arranged opposite to the first substrate; a plurality of light-emitting units, arranged on the first substrate and located between the first substrate and the second substrate; a black matrix, arranged on the second substrate and located between the second substrate and the first substrate; a plurality of photosensitive elements, arranged on the side of the black matrix away from the second substrate, the orthographic projection of the black matrix on the second substrate covers the orthographic projection of the plurality of photosensitive elements on the second substrate. A photosensitive element is arranged on the side of the black matrix of the display panel away from the second substrate, for detecting the light-emitting information of the light-emitting unit. Since the photosensitive element is arranged below the black matrix, the brightness detected by the light-emitting unit is not attenuated, so that the light-emitting brightness of the light-emitting unit detected by the photosensitive element is consistent with the display brightness of the light-emitting unit or there is a stable relationship, and the detection accuracy is high. In addition, the photosensitive element is covered by the black matrix, which does not affect the display resolution, transmittance and brightness of the display panel.

[0075] Figure 1 is a front schematic diagram of a display panel according to an embodiment of the present disclosure.

[0076] Figure 2 is a partial plan view of a display panel according to an embodiment of the present disclosure.

[0077] Combined with reference Figure 1 and Figure 2 According to an embodiment of the present disclosure, the display panel may include a first base substrate 110, a plurality of light emitting units 120 arranged on the first base substrate 110, a second base substrate 130 arranged opposite to the first base substrate 110, a black matrix 140 and a plurality of photosensitive elements 150 arranged in sequence on the second base substrate 130.

[0078] The plurality of light emitting units 120 may be arranged in an array along a first direction and a second direction to form a plurality of rows of light emitting units and a plurality of columns of light emitting units. Figure 2 The A direction shown can also be the B direction; the second direction can be Figure 2 The A direction shown can also be the B direction. When the first direction is the A direction, the second direction is the B direction; when the first direction is the B direction, the second direction is the A direction. The multiple rows and columns of light-emitting units formed are as follows: Figure 2 The light emitting unit 12c, the light emitting unit 12d and the light emitting unit 12e shown in the figure form one row of light emitting units; the light emitting unit 12a, the light emitting unit 12b and the light emitting unit 12c form one column of light emitting units.

[0079] The black matrix 140 may be a black matrix in a grid-like shape of a quadrilateral structure, or a black matrix in a mesh-like shape of a hexagonal structure, and the present disclosure does not limit the shape of the black matrix. For example, the black matrix may include a plurality of first light shielding portions 141 extending along a first direction and a plurality of second light shielding portions 142 extending along a second direction, wherein the plurality of first light shielding portions 141 are arranged along the second direction, such as the B direction, and the plurality of second light shielding portions 142 are arranged along the first direction, such as the A direction, and the first direction and the second direction are arranged crosswise.

[0080] The plurality of first shading portions 141 and the plurality of second shading portions 142 form a patterned black matrix, the projection of the black matrix on the second base substrate 130 does not overlap with the orthographic projection of the plurality of light emitting units 120 on the second base substrate 130, and adjacent light emitting units are separated by the first shading portions 141 or the second shading portions 142. For example, Figure 2 The light emitting unit 120 c and the black matrix 140 do not overlap in the orthographic projection on the second base substrate 130 , and the light emitting unit 120 c and the light emitting unit 120 d are separated by the first light shielding portion 141 .

[0081] The plurality of photosensitive elements 150 may be arranged in an array along the first direction and the second direction to form a plurality of rows of photosensitive elements and a plurality of columns of photosensitive elements. Figure 2 The photosensitive elements 150a, 150b, 150c and 150d shown in the figure form a row of photosensitive elements; the photosensitive elements 150a, 150e, 150f and 150g form a column of photosensitive elements.

[0082] A row of photosensitive elements is disposed between two adjacent rows of light-emitting units; and / or a column of photosensitive elements is disposed between two adjacent columns of light-emitting units. Figure 2 A row of photosensitive elements, such as the row of photosensitive element 150e, is formed between the row of light emitting unit 120a and the row of light emitting unit 120b. A column of photosensitive elements, such as the column of photosensitive element 150c, is formed between the row of light emitting unit 120a and the row of light emitting unit 120d.

[0083] Similarly, a row of light-emitting units is disposed between two adjacent rows of photosensitive elements; and / or a column of light-emitting units is disposed between two adjacent columns of photosensitive elements. Figure 2 A row of light emitting units, such as the row of light emitting units 120a, is formed between the row of light emitting elements 150a and the row of light emitting elements 150e. A column of light emitting units, such as the column of light emitting units 120e, is formed between the column of light emitting elements 150a and the column of light emitting elements 150b.

[0084] The plurality of light emitting units include a target light emitting unit located at the i-th row and the j-th column, for example Figure 2The light emitting unit 120a in the target light emitting unit is provided with at least two light sensing elements for detecting the light emitting intensity information of the target light emitting unit, for example Figure 2 In the photosensitive element 150c and the photosensitive element 150d, at least two photosensitive elements are staggered with the target light-emitting unit in the first direction and the second direction, and i and j are both positive integers.

[0085] At least two photosensitive elements are staggered with the target light-emitting unit in both the first and second directions, which can be understood as the photosensitive element and the target light-emitting unit are in different rows or columns in both the first and second directions. For example, at least two photosensitive elements include a first photosensitive element located in the i-th row and j-th column, a second photosensitive element located in the i-th row and j+1-th column, a third photosensitive element located in the i+1-th row and j+1-th column, and a fourth photosensitive element located in the i+1-th row and j+1-th column, and the first photosensitive element, the second photosensitive element, the third photosensitive element and the fourth photosensitive element are arranged at intervals along the circumference of the target light-emitting unit. And the first photosensitive element, the target light-emitting unit and the second photosensitive element are alternately arranged in the first direction; and / or, the third photosensitive element, the target light-emitting unit and the fourth photosensitive element are alternately arranged in the first direction; and / or, the first photosensitive element, the target light-emitting unit and the third photosensitive element are alternately arranged in the second direction; and / or, the second photosensitive element, the target light-emitting unit and the fourth photosensitive element are alternately arranged in the second direction.

[0086] For example, Figure 2 As shown, the target light-emitting unit is the light-emitting unit 120a, and photosensitive elements 150d, 150c, m and n are arranged in the circumferential direction of the light-emitting unit 120a for detecting the light-emitting intensity information of the light-emitting unit, wherein the photosensitive element 150d, the light-emitting unit 120a and the photosensitive element 150m are staggered in a first direction, such as direction A; the photosensitive element 150d, the light-emitting unit 120a and the photosensitive element 150c are staggered in a second direction, such as direction B; the photosensitive element 150c, the light-emitting unit 120a and the photosensitive element 150m are staggered in a first direction, such as direction A; the photosensitive element 150M, the light-emitting unit 120a and the photosensitive element 150N are staggered in a second direction, such as direction B.

[0087] The orthographic projections of the plurality of photosensitive elements on the second substrate are respectively located in the orthographic projections of the plurality of first light shielding portions and the intersections of the plurality of first light shielding portions on the second substrate. Figure 2 The photosensitive element 150h is located at the intersection of the first light shielding portion 141 and the second light shielding portion 142.

[0088] By staggering the photosensitive element with respect to the target light-emitting unit in both the first direction and the second direction, it is possible to avoid causing a large capacitance.

[0089] For example, Figure 2 When the photosensitive elements 150k and 150l are located between the light-emitting units and in the same row as the light-emitting units, it is difficult to ensure that the electrodes of the photosensitive elements 150k and 150l are connected. If two layers of electrodes are placed horizontally and separated by insulating materials, a large capacitance is easily introduced.

[0090] According to an embodiment of the present disclosure, the photosensitive element may include at least one of the following: a stacked metal layer and a semiconductor silicon layer, a stacked photosensitive thin film layer and a semiconductor silicon layer, a stacked metal layer, a silicon oxide layer and a semiconductor silicon layer, and a stacked photosensitive thin film layer, a silicon oxide layer and a semiconductor silicon layer.

[0091] The metal layer can be formed of materials such as gold, silver, and platinum. The photosensitive film layer can be made of a single tellurium film or transition metal dichalcogenides (TMDs); TMDs have a general chemical formula MX2, where M represents a transition metal such as molybdenum (Mo) or tungsten (W), and X represents a chalcogen element such as sulfur (S), selenium (Se), or tellurium (Te). The silicon oxide layer can be made of silicon dioxide material.

[0092] The stacked metal layer and semiconductor silicon layer can form a Schottky device, which is a low-power, ultra-high-speed semiconductor device, widely used in switching power supplies, inverters, drivers and other circuits, used as high-frequency, low-voltage, high-current rectifier diodes, or used as small-signal detector diodes in microwave communication circuits. Benefiting from the excellent photoelectric effect and light absorption ability of the semiconductor Si in the device, as well as the strong built-in electric field of the heterojunction, the Schottky device has the ability to self-drive, and the carrier concentration is different under different light intensities, and the current value changes with the light intensity.

[0093] The stacked metal layer, silicon oxide layer, and semiconductor silicon layer form a MOS (Metal-Oxide-Semiconductor) type device.

[0094] Figure 1 is a schematic diagram of a display panel including a Schottky type device.

[0095] like Figure 1 As shown, the display panel of this embodiment may further include an insulating layer 160, which is located between the black matrix 140 and the photosensitive element 150. A plurality of grooves extending along a first direction are formed on the side of the insulating layer 160 facing away from the black matrix, and the plurality of grooves are arranged along a second direction. The metal layer or the photosensitive film layer may be located in the plurality of grooves.

[0096] Combination Figure 1 and Figure 2As shown, a metal layer is provided on the side of the insulating layer away from the black matrix, and the metal layer may include a plurality of metal strips 151 extending in a first direction, and the plurality of metal strips 151 are arranged in a second direction; the metal strips may be respectively located in a plurality of grooves of the insulating layer 160. A semiconductor silicon layer is provided on the side of the metal layer away from the insulating layer 160, and the semiconductor silicon layer includes a plurality of semiconductor silicon strips 152 extending in the second direction, and the plurality of semiconductor silicon strips 152 are arranged in the first direction. The plurality of metal strips 151 and the plurality of semiconductor silicon strips 152 constitute a Wangzhang structure, and the mesh structure is within the coverage of the black matrix and does not affect the aperture ratio and brightness of the display panel.

[0097] A plurality of metal strips 151 and a plurality of semiconductor silicon strips 152 are stacked at cross positions, and a first portion of the metal strips 151 and a second portion of the semiconductor silicon strips 152 stacked at the cross positions form a Schottky contact photoelectric sensor unit SBD of an energy band structure, i.e., a photosensitive element. For example, Figure 2 The metal strip 151 and the semiconductor silicon strip 152 are stacked at a cross position, and a first portion of the metal strip 151 and a second portion of the semiconductor silicon strip 152 stacked at the cross position form a photosensitive element 150d.

[0098] The Schottky photoelectric sensor is composed of a metal strip, a semiconductor silicon (n-Si) strip, and an insulating layer. Since the work function of the metal is different from the Fermi level band position of n-Si, the Fermi levels of the two will tend to be consistent when they are in contact due to the Fermi level consistency principle, forming a Schottky barrier at the contact position, thereby forming a space charge region at the interface and forming a built-in electric field. When the brightness of the light-emitting unit changes, the number of photogenerated carriers inside the Schottky photoelectric sensor will change accordingly, and after separation by the built-in electric field, the information will be fed back to the control unit in the form of current value. Combined with the GOA timing signal, the control unit determines whether the brightness of the light-emitting unit is abnormal, and then corrects the brightness of the abnormal light-emitting unit through the driving circuit.

[0099] Schottky photoelectric sensors have the characteristics of wide band and high response, which helps to improve the ability to detect the brightness of wide-band light-emitting units. They have a feedback mechanism and can compensate for the brightness of any area when combined with a driving circuit. In addition, non-active SBD micro-devices do not affect the parasitic capacitance of the driving circuit and do not introduce new defects.

[0100] When the brightness of the light-emitting unit changes, the number of photogenerated carriers inside the Schottky photoelectric sensor will change accordingly. After separation by the built-in electric field, the information is fed back in the form of current value, thereby realizing the detection of the light-emitting intensity of the light-emitting unit.

[0101] Figure 3A-3C Schematic diagram of the principle of Schottky barrier formation according to an embodiment of the present disclosure.

[0102] like Figure 3A As shown, when the N-type semiconductor layer 310 contacts the metal layer 320, first, the "free electrons" in the N-type semiconductor, namely the positive ions 311, enter the metal (not diffusion movement); the principle is as follows: Figure 3B As shown in the figure, the metal work function is the minimum energy required for the metal to escape from the inside of the metal to the vacuum outside the surface; that is, φm = E0-(EF)m; E0 is the vacuum electron energy (vacuum energy level), and (EF)m is the metal Fermi level. Figure 3C As shown, the semiconductor work function refers to the difference between E0 and the semiconductor Fermi level, φs = E0-(EF)s; but the valence electrons under the semiconductor Fermi level have a probability of jumping to the conduction band and becoming "free electrons". At this point, another concept is introduced: semiconductor electron affinity, that is, the minimum energy required for the "free electrons" at the "conduction band bottom" of the semiconductor to escape from the body, χ = E0-Ec; if the "free electrons" in the metal or semiconductor want to enter the other material, then the "free electrons" in the metal need to overcome the "metal work function"; while the "free electrons" in the N-type semiconductor need to overcome the semiconductor affinity. Since the work function of the metal is greater than the electron affinity of the semiconductor, it means that the "free electrons" in the semiconductor have a greater probability (easier) to escape and enter the metal, and on the contrary, the probability of the "free electrons" in the metal escaping and entering the semiconductor is smaller, so the "free electrons" in the N-type semiconductor enter the metal. Then, positive charge "holes" are left in the charge region of the N-type semiconductor interface, and there are excess negative charges 321, namely "free electrons", on the metal interface, thereby generating a built-in electric field in which N- is greater than the metal; due to the built-in electric field, the "free electrons" inside the metal produce a drift motion of metal -> N, and finally reach equilibrium to form a Schottky barrier.

[0103] Figure 4 It is a partial side view of a display panel in which the photosensitive element is a MOS type device according to an embodiment of the present disclosure.

[0104] Figure 5 It is a partial plan view of a display panel in which the photosensitive element is a MOS type device according to an embodiment of the present disclosure.

[0105] like Figure 4 and Figure 5As shown, the metal layer of the display panel may include a plurality of metal strips 151 extending in a first direction, and the plurality of metal strips 151 are arranged in a second direction; the metal strips 151 may be respectively located in a plurality of grooves of the insulating layer 160. A silicon oxide layer 153 is provided on the side of the metal layer away from the insulating layer 160, and the silicon oxide layer 152 completely covers the metal layer; a semiconductor silicon layer is provided on the side of the silicon oxide layer 153 away from the metal layer, and the semiconductor silicon layer includes a plurality of semiconductor silicon strips 152 extending in the second direction, and the plurality of semiconductor silicon strips 152 are arranged in the first direction. The orthographic projection of the silicon oxide layer on the second substrate covers the orthographic projection of the semiconductor silicon layer on the second substrate.

[0106] A plurality of metal strips 151 and a plurality of semiconductor silicon strips 152 are stacked at cross positions, and a first portion of the metal strips 151 stacked at the cross positions, a second portion of the semiconductor silicon strips 152, and a third portion of the silicon oxide layer form a MOS device. For example, Figure 5 The metal strip 151, silicon oxide layer 153 and semiconductor silicon strip 152 are stacked at an intersection, and the first part of the metal strip 151, the third part of the silicon oxide layer and the second part of the semiconductor silicon strip 152 stacked at the intersection form a photosensitive element 150d.

[0107] According to an embodiment of the present disclosure, the metal layer may also be replaced by a photosensitive film layer. Figure 1 and Figure 4 The metal layer in the p-Te / n-Si is replaced with a semiconductor material single tellurium (Te) thin film to construct a p-Te / n-Si van der Waals PN junction. The p-Te / n-Si has a type II heterojunction band structure, which gives it unique photovoltaic and self-driving capabilities. Tellurium (Te) can be prepared by magnetron sputtering and then annealed at 250°C to improve the crystallinity of Te.

[0108] Specifically, for example, a photosensitive film layer can be provided on the side of the black matrix away from the second substrate, the photosensitive film layer includes a plurality of photosensitive film strips extending along a first direction, and the plurality of photosensitive film strips are arranged along a second direction, and the photosensitive film strips are located in the grooves of the insulating layer; a semiconductor silicon layer is provided on the side of the photosensitive film layer away from the black matrix, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; the plurality of photosensitive film strips and the plurality of semiconductor silicon strips are stacked at cross positions, respectively, and the photosensitive element includes a first portion of the photosensitive film strips and a second portion of the semiconductor silicon strips stacked at the cross positions.

[0109] For another example, a photosensitive film layer is provided on the side of the black matrix facing away from the second base substrate, the photosensitive film layer includes a plurality of photosensitive film strips extending in a first direction, and the plurality of photosensitive film strips are arranged in a second direction, and the photosensitive film strips are located in the grooves of the insulating layer; a silicon oxide layer is provided on the side of the photosensitive film layer facing away from the black matrix; a semiconductor silicon layer is provided on the side of the silicon oxide layer facing away from the photosensitive film layer, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending in the second direction, and the plurality of semiconductor silicon strips are arranged in the first direction; the orthographic projection of the silicon oxide layer on the second base substrate covers the orthographic projection of the semiconductor silicon layer on the second base substrate; the plurality of photosensitive film strips and the plurality of semiconductor silicon strips are respectively stacked at cross positions, and the photosensitive element includes a first portion of the photosensitive film strips stacked at the cross positions, a second portion of the semiconductor silicon strips, and a third portion of the silicon oxide layer.

[0110] In some embodiments, the display panel may further include an operational amplifier circuit. Since the current value of the passive photosensitive device is often relatively small, an operational amplifier circuit is generally required to amplify the detection current. The operational amplifier circuit of the embodiment of the present disclosure may adopt any operational amplifier circuit that can accommodate the current value, and the embodiment of the present disclosure does not limit the specific structure of the operational amplifier circuit.

[0111] According to an embodiment of the present disclosure, a method for preparing a display panel is also provided.

[0112] Figure 6 is a flow chart of a method for preparing a display panel according to an embodiment of the present disclosure.

[0113] like Figure 6 As shown, the index method of the display panel of this embodiment includes operations S610 to S640.

[0114] In operation S610, a plurality of light emitting units are formed on a first base substrate.

[0115] In operation S620, a black matrix is ​​formed on the second base substrate.

[0116] In operation S630, a plurality of photosensitive elements are formed on a side of the black matrix facing away from the second base substrate, and the orthographic projection of the black matrix on the second base substrate covers the orthographic projection of the plurality of photosensitive elements on the second base substrate.

[0117] In operation S640, the first base substrate and the second base substrate are assembled to form a display panel. In the display panel, a plurality of photosensitive elements are located on a side of the black matrix close to the light emitting unit.

[0118] Figure 7 Schematic diagram of a method for preparing a photosensitive element of a display panel according to an embodiment of the present disclosure.

[0119] like Figure 7As shown, the above operation S630 includes operations S710 to S750.

[0120] In operation S710, an insulating layer is formed on a side of the black matrix 140 facing away from the second base substrate.

[0121] In operation S720, an etching process is performed on a side of the insulating layer away from the black matrix to form a plurality of grooves extending along a first direction, and the plurality of grooves are arranged along a second direction.

[0122] In operation S730, a metal layer is formed on a side of the insulating layer facing away from the black matrix.

[0123] In operation S740, the metal layer is etched to form a metal strip in the groove.

[0124] In operation S750, a semiconductor silicon layer is formed on the side of the metal layer away from the black matrix, and the semiconductor silicon layer is etched to form a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; the metal strips and the semiconductor silicon strips are stacked at intersections, and the first portion of the stacked metal strips and the second portion of the semiconductor silicon strips form a photosensitive element.

[0125] Figure 8 It is a plan view schematic diagram of a method for preparing a photosensitive element of a display panel according to an embodiment of the present disclosure.

[0126] like Figure 8 As shown, the preparation method first forms an insulating layer 810 on the side of the black matrix away from the second substrate; then, an etching process is performed on the side of the insulating layer 810 away from the black matrix to form a plurality of grooves 820 extending along a first direction, and the plurality of grooves 820 are arranged along a second direction; then, a metal layer 830 is formed on the side of the insulating layer away from the black matrix, and the metal layer 830 is etched to form metal strips 840 in the grooves; thereafter, a semiconductor silicon layer 850 is formed on the side of the metal layer away from the black matrix, and the semiconductor silicon layer 850 is etched to form a plurality of semiconductor silicon strips 860 extending along the second direction, and the plurality of semiconductor silicon strips 860 are arranged along the first direction; the metal strips 840 and the semiconductor silicon strips 860 are stacked at the intersection, and the stacked metal strips 840 and semiconductor silicon strips 860 form a photosensitive element.

[0127] It should be noted that, in other embodiments, Figure 7 or Figure 8 The metal layer in the preparation method of the photosensitive element is replaced by a photosensitive film layer.

[0128] Fig. 9 is a schematic diagram of a method for preparing a photosensitive element of a display panel according to another embodiment of the present disclosure.

[0129] like Fig. 9As shown, the above operation S630 includes operations S910 to S960.

[0130] In operation S910, an insulating layer is formed on a side of the black matrix facing away from the second base substrate.

[0131] In operation S920, an etching process is performed on a side of the insulating layer away from the black matrix to form a plurality of grooves extending along a first direction, and the plurality of grooves are arranged along a second direction.

[0132] In operation S930, a metal layer is formed on a side of the insulating layer facing away from the black matrix.

[0133] In operation S940 , the metal layer is etched to form a metal strip in the groove.

[0134] In operation S950, a silicon dioxide layer is formed on a side of the metal layer facing away from the black matrix.

[0135] In operation S960, a semiconductor silicon layer is formed on the side of the silicon dioxide layer facing away from the insulating layer, and the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; a plurality of metal strips and the plurality of the semiconductor silicon strips are stacked at cross positions, respectively, and the first part of the stacked metal strips, the second part of the semiconductor silicon strips, and the third part of the silicon oxide layer form a photosensitive element.

[0136] It should be noted that, in other embodiments, Fig. 9 The metal layer in the preparation method of the photosensitive element is replaced by a photosensitive film layer.

[0137] According to an embodiment of the present disclosure, a brightness compensation method for a display panel is also provided.

[0138] It should be noted that the display panel includes a plurality of light-emitting units and a plurality of photosensitive elements, wherein the plurality of light-emitting units are arranged in an array along the first direction and the second direction to form a plurality of rows of light-emitting units and a plurality of columns of light-emitting units; the plurality of photosensitive elements are arranged in an array along the first direction and the second direction to form a plurality of rows of photosensitive elements and a plurality of columns of photosensitive elements; a row of the photosensitive elements is arranged between two adjacent rows of light-emitting units; a column of the photosensitive elements is arranged between two adjacent columns of light-emitting units. In some of the embodiments, the photosensitive element may be an SBD device. Thanks to the high switching frequency of the SBD device, the SBD device is controlled to be turned on row by row by using the horizontal display timing, that is, only one row of SBD devices is in working state at the same time. At the same time, the GOA driving unit timing signal is matched to realize the detection of the brightness of the light-emitting unit of the turned-on row. In combination with the actual detected light intensity and the theoretical light intensity, the display panel is self-compensated for brightness through the driving circuit.

[0139] It should be noted that the display panel prepared by the preparation method disclosed in the present invention has the same beneficial effects as the display panel provided by the aforementioned embodiment.

[0140] Fig.10 is a flow chart of a brightness compensation method of a display panel according to an embodiment of the present disclosure.

[0141] like Fig.10 As shown, the brightness compensation method of this embodiment includes operations S1010 to S1040.

[0142] In operation S1010, for a target light-emitting unit among a plurality of light-emitting units, light intensity information detected by at least two target photosensitive elements of the target light-emitting unit is obtained.

[0143] For example, the target light emitting unit may be Figure 2 For the light emitting unit 120a shown in FIG. 1 , at least two target photosensitive elements for the target light emitting unit may be the photosensitive element 150c and the photosensitive element 150d.

[0144] In operation S1020, the luminous intensity information detected by the at least two target photosensitive elements is respectively compared with the luminous intensity standard values ​​preset for the at least two target photosensitive elements.

[0145] The standard value of luminous intensity may be the luminous intensity detected when the display panel is generated. For example, the display panel is calibrated for screen brightness uniformity before leaving the factory, and then the light intensity corresponding to each light-emitting unit is recorded by a photosensitive element as the standard value of luminous intensity. When the user uses the display panel, the uniformity of the screen brightness can be calibrated in real time with reference to the standard value of luminous intensity.

[0146] Comparing the luminous intensity information detected by each of the at least two target photosensitive elements with the luminous intensity standard values ​​preset for the at least two target photosensitive elements may include, for example, comparing the luminous intensity information of the photosensitive element 150c with the luminous intensity standard value of the photosensitive element 150c, and comparing the luminous intensity information of the photosensitive element 150d with the luminous intensity standard value of the photosensitive element 150d.

[0147] In operation S1030, in response to the difference between the luminous intensity information detected by at least two target photosensitive elements and the luminous intensity standard value being greater than a preset first threshold, luminous intensity information of adjacent luminous units adjacent to the target luminous unit is acquired.

[0148] The first threshold value can represent the degree to which the luminous intensity information of the light-emitting element deviates from the luminous intensity standard value, but when the deviation exceeds a certain value, it indicates that the light-emitting element may emit abnormal light.

[0149] Since each photosensitive element is located between two adjacent light-emitting elements, the luminous intensity information detected by the photosensitive element may be the sum of the luminous intensities of the two adjacent light-emitting elements. When the difference between the luminous intensity information and the luminous intensity standard value in each target photosensitive element is less than or equal to the first threshold, it indicates that the target light-emitting unit is normal and no brightness compensation is required. For example, the difference between the luminous intensity information of the photosensitive element 150d and the luminous intensity standard value of the photosensitive element 150d is less than or equal to the first threshold.

[0150] When the difference between the luminous intensity information detected by each target photosensitive element and the luminous intensity standard value is greater than the preset first threshold, it is necessary to combine the luminous intensity information of the adjacent luminous units adjacent to the target luminous unit to determine whether the target luminous unit is abnormally luminous. For example, the difference between the luminous intensity information of the photosensitive element 150c and the luminous intensity standard value of the photosensitive element 150c is greater than the first threshold, and at the same time, the difference between the luminous intensity information of the photosensitive element 150d and the luminous intensity standard value of the photosensitive element 150d is also greater than the first threshold. At this time, it is necessary to combine the luminous intensity information of the adjacent luminous units adjacent to the target luminous unit to determine whether the target luminous unit is abnormally luminous.

[0151] In some embodiments, the method may further include: in response to the difference between the average value of the luminous intensity information detected by at least two target photosensitive elements and the standard value of the luminous intensity of the target luminous unit being greater than a preset second threshold, obtaining the luminous intensity information of the adjacent luminous units adjacent to the target luminous unit. For example, the average value is determined based on the luminous intensity information of the photosensitive element 150d and the luminous intensity information of the photosensitive element 150c, and the average value is compared with the standard value of the luminous intensity of the target luminous unit. When the difference between the average value and the standard value of the luminous intensity is less than or equal to the second threshold, it indicates that the target luminous unit is normal and no brightness compensation is required. When the difference between the average value and the standard value of the luminous intensity is greater than the second threshold, it is necessary to combine the luminous intensity information of the adjacent luminous units adjacent to the target luminous unit to determine whether the target luminous unit is abnormally emitting light.

[0152] In operation S1040, in response to the luminous intensity information of the adjacent luminous unit being normal, the luminous intensity of the target luminous unit is compensated according to the difference between the luminous intensity information detected by at least two target photosensitive elements and the luminous intensity standard value.

[0153] The luminous intensity information of the adjacent luminous units is normal, indicating that the difference between the luminous intensity information detected by the photosensitive element for detecting the adjacent luminous units and the luminous intensity standard value of the adjacent luminous units is less than or equal to the first threshold.

[0154] The normal luminous intensity information of the adjacent luminous units also indicates that the difference between the average value of the luminous intensity information detected by the photosensitive element for detecting the adjacent luminous units and the luminous intensity standard value of the adjacent luminous units is less than or equal to the second threshold.

[0155] An embodiment of the present disclosure also provides a display device.

[0156] Fig.11 is a schematic diagram of a display device according to an embodiment of the present disclosure.

[0157] like Fig.11 As shown, the display device 1100 of this embodiment may include the above-mentioned display panel 1110. The display device 1100 may include, but is not limited to: electronic paper, mobile phones, tablet computers, televisions, monitors, notebook computers, digital photo frames, navigators, and any other products or components with display functions. It should be understood that the display device 1100 has the same beneficial effects as the display panel 1110 provided in the above-mentioned embodiments.

[0158] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A display panel, comprising: a first substrate base plate; A second substrate, disposed opposite to the first substrate; A plurality of light emitting units are disposed on the first base substrate and located between the first base substrate and the second base substrate; A black matrix is ​​disposed on the second base substrate and is located between the second base substrate and the first base substrate; A plurality of photosensitive elements are arranged on a side of the black matrix away from the second base substrate, and the orthographic projection of the black matrix on the second base substrate covers the orthographic projections of the plurality of photosensitive elements on the second base substrate.

2. The method of claim 1, wherein: The plurality of light-emitting units are arranged in an array along the first direction and the second direction to form a plurality of rows of light-emitting units and a plurality of columns of light-emitting units; the plurality of photosensitive elements are arranged in an array along the first direction and the second direction to form a plurality of rows of photosensitive elements and a plurality of columns of photosensitive elements; A row of the photosensitive elements is arranged between two adjacent rows of the light-emitting units; and / or a column of the photosensitive elements is arranged between two adjacent columns of the light-emitting units.

3. The method according to claim 2, wherein: The multiple light-emitting units include a target light-emitting unit located in the i-th row and j-th column. In the circumferential direction of the target light-emitting unit, at least two photosensitive elements for detecting the light intensity information of the target light-emitting unit are arranged. The at least two photosensitive elements are staggered with the target light-emitting unit in the first direction and the second direction, and i and j are both positive integers.

4. The method according to claim 3, wherein: The multiple photosensitive elements include a first photosensitive element located at the i-th row and j-th column, a second photosensitive element located at the i-th row and j+1-th column, a third photosensitive element located at the i+1-th row and j-th column, and a fourth photosensitive element located at the i+1-th row and j+1-th column, and the first photosensitive element, the second photosensitive element, the third photosensitive element and the fourth photosensitive element are arranged at intervals along the circumference of the target light-emitting unit.

5. The method according to claim 4, wherein: The first photosensitive elements, the target light-emitting units and the second photosensitive elements are alternately arranged in the first direction; and / or, The third photosensitive element, the target light emitting unit and the fourth photosensitive element are alternately arranged in the first direction; and / or, The first photosensitive element, the target light emitting unit and the third photosensitive element are alternately arranged in the second direction; and / or, The second photosensitive element, the target light emitting unit and the fourth photosensitive element are alternately arranged in the second direction.

6. The display panel according to claim 1, wherein: The black matrix includes a plurality of first light shielding portions extending along a first direction and a plurality of second light shielding portions extending along a second direction, wherein the plurality of first light shielding portions are arranged along the second direction, and the plurality of second light shielding portions are arranged along the first direction, and the first direction and the second direction are arranged crosswise; The orthographic projections of the plurality of photosensitive elements on the second base substrate are respectively located in the orthographic projections of the plurality of first light-shielding portions and the intersection positions of the plurality of first light-shielding portions on the second base substrate.

7. The display panel according to claim 6, wherein: The photosensitive element includes at least one of the following: a stacked metal layer and a semiconductor silicon layer, a stacked photosensitive film layer and a semiconductor silicon layer, a stacked metal layer, a silicon oxide layer and a semiconductor silicon layer, and a stacked photosensitive film layer, a silicon dioxide layer and a semiconductor silicon layer.

8. The display panel according to claim 7, wherein: A metal layer is disposed on a side of the black matrix facing away from the second substrate, the metal layer comprises a plurality of metal strips extending along the first direction, and the plurality of metal strips are arranged along the second direction; A semiconductor silicon layer is disposed on a side of the metal layer away from the black matrix, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; The plurality of metal strips and the plurality of semiconductor silicon strips are stacked at cross positions, respectively, and the photosensitive element includes a first portion of the metal strips and a second portion of the semiconductor silicon strips stacked at the cross positions.

9. The display panel according to claim 7, wherein: A metal layer is disposed on a side of the black matrix facing away from the second substrate, the metal layer comprises a plurality of metal strips extending along the first direction, and the plurality of metal strips are arranged along the second direction; A silicon oxide layer is disposed on a side of the metal layer away from the black matrix; A semiconductor silicon layer is disposed on the side of the silicon oxide layer facing away from the metal layer, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; the orthographic projection of the silicon oxide layer on the second substrate covers the orthographic projection of the semiconductor silicon layer on the second substrate; The plurality of metal strips and the plurality of semiconductor silicon strips are stacked at cross positions respectively, and the photosensitive element includes a first portion of the metal strips, a second portion of the semiconductor silicon strips and a third portion of the silicon oxide layer stacked at the cross positions.

10. The display panel according to claim 8 or 9, further comprising: The insulating layer is located between the black matrix and the photosensitive element. A plurality of grooves extending along a first direction are formed on a side of the insulating layer away from the black matrix. The plurality of grooves are arranged along the second direction. The plurality of metal strips are respectively located in the plurality of grooves.

11. The display panel according to claim 7, wherein: A photosensitive film layer is disposed on a side of the black matrix away from the second base substrate, the photosensitive film layer includes a plurality of photosensitive film strips extending along the first direction, and the plurality of photosensitive film strips are arranged along the second direction; A semiconductor silicon layer is disposed on a side of the photosensitive film layer away from the black matrix, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; The plurality of photosensitive film strips and the plurality of semiconductor silicon strips are stacked at cross positions, respectively, and the photosensitive element includes a first portion of the photosensitive film strips and a second portion of the semiconductor silicon strips stacked at the cross positions.

12. The display panel according to claim 7, wherein: A photosensitive film layer is disposed on a side of the black matrix away from the second base substrate, the photosensitive film layer includes a plurality of photosensitive film strips extending along the first direction, and the plurality of photosensitive film strips are arranged along the second direction; A silicon oxide layer is disposed on a side of the photosensitive film layer away from the black matrix; The semiconductor silicon layer is disposed on the side of the silicon oxide layer away from the photosensitive film layer, the semiconductor silicon layer includes a plurality of semiconductor silicon strips extending along the second direction, and the plurality of semiconductor silicon strips are arranged along the first direction; the orthographic projection of the silicon oxide layer on the second substrate covers the orthographic projection of the semiconductor silicon layer on the second substrate; The plurality of photosensitive film strips and the plurality of semiconductor silicon strips are stacked at cross positions respectively, and the photosensitive element includes a first portion of the photosensitive film strip stacked at the cross position, a second portion of the semiconductor silicon strip and a third portion of the silicon oxide layer.

13. The display panel according to claim 11 or 12, further comprising: The insulating layer is located between the black matrix and the photosensitive element. A plurality of grooves extending along a first direction are formed on a side of the insulating layer away from the black matrix. The plurality of grooves are arranged along the second direction. The plurality of photosensitive film strips are respectively located in the plurality of grooves.

14. A brightness compensation method for a display panel, wherein: The display panel includes a plurality of light-emitting units and a plurality of photosensitive elements; The method comprises: For a target light-emitting unit among the plurality of light-emitting units, obtaining light intensity information detected by at least two target photosensitive elements of the target light-emitting unit respectively; Comparing the luminous intensity information detected by the at least two target photosensitive elements with the luminous intensity standard values ​​preset for the at least two target photosensitive elements; In response to the difference between the luminous intensity information detected by each of the at least two target photosensitive elements and the luminous intensity standard value being greater than a preset first threshold, acquiring the luminous intensity information of an adjacent luminous unit adjacent to the target luminous unit; and In response to the luminous intensity information of the adjacent luminous unit being normal, the luminous intensity of the target luminous unit is compensated according to the difference between the luminous intensity information detected by each of the at least two target photosensitive elements and the luminous intensity standard value.

15. A method for preparing a display panel, the method comprising: forming a plurality of light emitting units on a first base substrate; forming a black matrix on the second substrate; A plurality of photosensitive elements are formed on a side of the black matrix away from the second base substrate, and the orthographic projection of the black matrix on the second base substrate covers the orthographic projection of the plurality of photosensitive elements on the second base substrate; The first base substrate and the second base substrate are assembled to form a display panel, in which a plurality of photosensitive elements are located on a side of the black matrix close to the light-emitting unit.

16. A display device comprising the display panel according to any one of claims 1 to 13.

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