Small-size mercury telluride thin film, preparation method thereof and short-wave infrared detector
By mixing mercury halide with DMF, ME, and BTA in an anhydrous and oxygen-free environment, and adding CdTe quantum dot solution for cation exchange reaction, a small-sized mercury telluride film was prepared, which solved the complex problem of hole transport layer preparation in the prior art, and achieved the preparation of high-quality films and good performance of short-wave infrared detectors.
Patent Information
- Application Number
- CN202510040031.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-10
- Publication Date
- 2025-05-06
AI Technical Summary
The hole transport layer preparation method of existing HgTe quantum dot infrared detector devices is too complicated and is not conducive to batch manufacturing.
In an anhydrous and oxygen-free environment, mercury halide is mixed with DMF, ME, and BTA to obtain a mixed exchange solution; the CdTe quantum dot solution is added to the mixed exchange solution and oscillated, and a cation exchange reaction occurs to generate a mercury telluride quantum dot solution; cleaning and purification are used for cleaning and purification, and mercury telluride quantum dot slurry is prepared by spin coating. Small-sized mercury telluride films are prepared.
The preparation process of mercury telluride film is simplified, the quality of the film is improved, and it is suitable for the preparation of short-wave infrared detectors, achieving low dark current and high light response device performance.
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Figure CN119947542A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a small-sized mercury telluride film and a preparation method thereof, and a short-wave infrared detector. Background Art
[0002] In recent years, infrared detectors have begun to emerge in many fields due to their versatility, and have great application potential in military and civilian fields. Although the performance is quite different from that of traditional infrared detectors such as InGaAs detectors, quantum dot infrared detectors are active in the field of infrared detectors due to their size-adjustable band gap, low cost, and ability to be directly integrated with silicon. Since the body exciton Bohr radius is 39.3nm and the body band gap is zero, the absorption of HgTe quantum dots can be extended to the long-wave infrared and even terahertz regions, which makes the infrared focal plane arrays prepared by them detect longer wavelengths and a wider range of applications, and have a very large application market. Since the first PbS quantum dot detector was released in 2005, the performance and structure of quantum dot infrared detectors have been continuously developing, from the initial photoconductive structure to a more mature photovoltaic structure, and even more new structures such as NPN structure, and the performance has been greatly improved. At present, the mainstream of HgTe quantum dot infrared detector devices is photoconductive devices. Although they have excellent performance, this type of structure still has problems, and the complex preparation of the hole transport layer is one of them. Its overly complex preparation method makes it unfavorable for mass production. Therefore, it is urgent to develop a new process to simply and efficiently prepare high-quality mercury telluride quantum dot films. Summary of the invention
[0003] The present application aims to solve at least one of the above-mentioned technical problems, and can improve the quality of the mercury telluride film by providing a small-sized mercury telluride film and a preparation method thereof, and a short-wave infrared detector.
[0004] On one hand, the present application provides a method for preparing a small-sized mercury telluride film, and the method for preparing a small-sized mercury telluride film comprises:
[0005] In an anhydrous and oxygen-free environment, mercuric halide is mixed and shaken with DMF, ME, and BTA to obtain a mixed exchange solution;
[0006] In an anhydrous and oxygen-free environment, adding a CdTe quantum dot solution to the mixed exchange solution and shaking the solution to generate a mercury telluride quantum dot solution by a cation exchange reaction;
[0007] In an anhydrous and oxygen-free environment, the mercury telluride quantum dot solution is cleaned and purified using a cleaning agent and an anti-solvent, and a dispersant is added after centrifugation to prepare a mercury telluride quantum dot slurry;
[0008] In a water-free and oxygen-free environment, the mercury telluride quantum dot slurry is spin-coated to prepare a small-sized mercury telluride film.
[0009] Optionally, the mercuric halide includes at least one of mercuric chloride, mercuric bromide and mercuric iodide, and the concentration of the mercuric halide in the mixed exchange liquid is 0.1 mol / L-2 mol / L.
[0010] Optionally, the volume ratio of ME to BTA in the mixed exchange solution is 1:1 to 1:10.
[0011] Optionally, in an anhydrous and oxygen-free environment, adding a CdTe quantum dot solution to the mixed exchange solution and shaking the mixed exchange solution to generate a mercury telluride quantum dot solution by a cation exchange reaction, comprising:
[0012] In an anhydrous and oxygen-free environment, the CdTe quantum dot solution is added to the mixed exchange solution and shaken for 30 seconds to 120 seconds, so that a cation exchange reaction occurs to produce a mercury telluride quantum dot solution.
[0013] Optionally, the concentration of the CdTe quantum dot solution is 1 mg / mL to 1000 mg / mL.
[0014] Optionally, in an anhydrous and oxygen-free environment, adding the CdTe quantum dot solution to the mixed exchange solution and shaking it, causing a cation exchange reaction to produce a mercury telluride quantum dot solution, including: in an anhydrous and oxygen-free environment, adding the CdTe quantum dot solution to the mixed exchange solution and shaking it for 30s to 120s, causing a cation exchange reaction to produce a mercury telluride quantum dot solution.
[0015] Optionally, the cleaning agent is n-octane.
[0016] Optionally, the anti-solvent includes at least one of ethanol, methanol and toluene.
[0017] On one hand, the present application provides a small-sized mercury telluride film, which is prepared by any of the methods described above.
[0018] On the one hand, the present application provides a short-wave infrared detector, which includes a top electrode, a small-sized mercury telluride film, a selenium-doped mercury telluride quantum dot layer, an electron transport layer, a bottom electrode and a substrate, and the small-sized mercury telluride film is the small-sized mercury telluride film described in any one of the above items.
[0019] In the small-sized mercury telluride film and its preparation method, and the short-wave infrared detector of the present application, the small-sized mercury telluride film and its preparation method include: in an anhydrous and oxygen-free environment, mercury halide is mixed and shaken with DMF, ME, and BTA to obtain a mixed exchange solution; in an anhydrous and oxygen-free environment, CdTe quantum dot solution is added to the mixed exchange solution and shaken to generate a cation exchange reaction to produce a mercury telluride quantum dot solution; in an anhydrous and oxygen-free environment, the mercury telluride quantum dot solution is cleaned and purified with a cleaning agent and an anti-solvent, and a dispersant is added after centrifugation to prepare a mercury telluride quantum dot slurry; in an anhydrous and oxygen-free environment, the mercury telluride quantum dot slurry is spin-coated to prepare a small-sized mercury telluride film. The present application can improve the quality of the mercury telluride film. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a schematic flow chart of a small-sized mercury telluride film and a method for preparing the same provided in an embodiment of the present application;
[0021] Figure 2 The absorption curve of cadmium telluride quantum dots in a method for preparing a small-sized mercury telluride film provided for the implementation of this application;
[0022] Figure 3 A schematic diagram of the structure of a short-wave infrared detector made of a small-sized mercury telluride film provided for the implementation of this application;
[0023] Figure 4 A film absorption diagram of a small-sized mercury telluride film after using different halogenated liquid phase cation exchange for the implementation of this application;
[0024] Figure 5 A current-voltage diagram of a short-wave infrared detector prepared by using a small-sized mercury telluride film for the implementation of this application after cation exchange with different halogenated liquid phases;
[0025] Figure 6 A transmission electron microscope image of cadmium telluride quantum dots in the preparation of a small-sized mercury telluride film provided for the implementation of this application;
[0026] Figure 7 A diagram of the element ratios of a small-sized mercury telluride film after cation exchange using different halogenated liquid phases provided for the implementation of the present application. DETAILED DESCRIPTION
[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.
[0028] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.
[0029] In this application, the word "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described in this application as "exemplary" is not necessarily to be construed as being preferred or advantageous over other embodiments. The following description is given to enable any technician in the field to implement and use the present application. In the following description, details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present application can be implemented without using these specific details. In other instances, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present application with unnecessary details. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the widest scope consistent with the principles and features disclosed in the present application.
[0030] See also Figure 1 In an embodiment of the present application, a method for preparing a small-sized mercury telluride film comprises:
[0031] 201. In an anhydrous and oxygen-free environment, mix and shake the mercuric halide with DMF, ME, and BTA to obtain a mixed exchange solution.
[0032] In the embodiment of the present application, the mercuric halide includes at least one of mercuric chloride, mercuric bromide and mercuric iodide. The mercuric halide can be mercuric chloride, mercuric bromide, mercuric iodide or a combination thereof.
[0033] In the embodiment of the present application, the volume ratio of ME to BTA in the mixed exchange liquid is 1:1 to 1:10.
[0034] Wherein, the concentration of mercuric halide in the mixed exchange liquid is 0.1 mol / L-2 mol / L.
[0035] In the embodiment of the present application, in an anhydrous and oxygen-free environment, the mercuric halide is mixed with DMF, ME, and BTA and shaken for 30 to 120 seconds to obtain a mixed exchange solution.
[0036] In a specific embodiment, the mercuric halide is mercuric chloride. 136 mg of mercuric chloride is weighed, 5 mL of DMF, 700 ul of ME and 200 ul of BTA are added, and the mixture is shaken for 30 to 120 s to obtain a mixed exchange solution.
[0037] In another specific embodiment, the mercuric halide is mercuric iodide. Weigh 227 mg of mercuric iodide, add 5 mL of DMF, 700 ul of ME, and 200 ul of BTA, mix and shake for 30 to 120 seconds to obtain a mixed exchange solution.
[0038] In another specific embodiment, the mercuric halide is mercuric bromide. Weigh 180 mg of mercuric bromide, add 5 mL of DMF, 700 ul of ME, and 200 ul of BTA, mix and shake for 30 to 120 seconds to obtain a mixed exchange solution.
[0039] In an anhydrous and oxygen-free environment, CdTe quantum dot solution is added to the mixed exchange solution and shaken to cause a cation exchange reaction to produce a mercury telluride quantum dot solution.
[0040] In the embodiment of the present application, the concentration of the CdTe quantum dot solution is 1 mg / mL to 1000 mg / mL. CdTe is cadmium telluride. Figure 2 The present invention provides an absorption curve of cadmium telluride quantum dots in a method for preparing a small-sized mercury telluride film for the implementation of the present application.
[0041] In the embodiment of the present application, in an anhydrous and oxygen-free environment, a CdTe quantum dot solution is added to a mixed exchange solution and shaken to generate a cation exchange reaction to produce a mercury telluride quantum dot solution, including:
[0042] In an anhydrous and oxygen-free environment, the CdTe quantum dot solution is added to the mixed exchange solution and shaken for 30s to 120s, and a cation exchange reaction occurs to produce a mercury telluride quantum dot solution.
[0043] Specifically, a tellurium precursor is added into a cadmium chloride oleylamine solution containing a long-chain ligand to synthesize a CdTe quantum dot solution with an absorption cutoff wavelength of 500nm to 800nm; wherein the tellurium precursor is a tellurium oxide (TeO) precursor solution dissolved in DDT.
[0044] In the example of the present application, the CdTe quantum dot solution was diluted to 10 mg / mL, 5 mL was added to the mixed exchange solution, and the solution was shaken for 1 minute to cause a cation exchange reaction to produce a mercury telluride quantum dot solution.
[0045] In an anhydrous and oxygen-free environment, the mercury telluride quantum dot solution is cleaned and purified using a cleaning agent and an anti-solvent, and a dispersant is added after centrifugation to prepare a mercury telluride quantum dot slurry.
[0046] In the embodiment of the present application, the cleaning agent is n-octane, and the anti-solvent includes at least one of ethanol, methanol, and toluene.
[0047] In the embodiment of the present application, the volume of the added anti-solvent is 1-5 times the volume of the mercury telluride quantum dot solution.
[0048] In the embodiment of the present application, a mercury telluride quantum dot solution is produced, and then the mercury telluride quantum dot solution is allowed to stand; the supernatant is removed, 5 mL of n-octane is added, and the solution is allowed to stand for 30 seconds after shaking to separate the layers, and the supernatant is removed, and the cycle is repeated three times; the lower black solution is taken out, 3 times the anti-solvent toluene is added, and the solution is centrifuged at 9000 r / min for 3 minutes. After centrifugation, the solution is inverted and drained, and 100 ul of DMF is added to prepare a small-sized mercury telluride quantum dot slurry.
[0049] In a water-free and oxygen-free environment, mercury telluride quantum dot slurry is spin-coated to prepare small-sized mercury telluride films.
[0050] In the embodiment of the present application, the substrate is placed on a spin coater, and the parameters are set as a spin coating speed of 6000 revolutions per minute, a spin coating acceleration of 500 radians per square second, and a spin coating time of 60 seconds; a small-sized mercury telluride film can be obtained by dripping mercury telluride quantum dot slurry on the substrate.
[0051] Embodiment 1:
[0052] In the embodiment of the present application, the mercuric halide is mercuric chloride.
[0053] In some embodiments, the method for preparing a small-sized mercury telluride thin film comprises the following specific steps:
[0054] (1) Preparation of cadmium telluride quantum dots: A tellurium precursor is added to a cadmium chloride oleylamine solution containing a long-chain ligand to synthesize a CdTe quantum dot solution with an absorption cutoff wavelength of 500 nm to 800 nm; wherein the tellurium precursor is a tellurium oxide (TeO) precursor solution dissolved in DDT.
[0055] (2) Preparation of mercuric halide exchange solution: Weigh 136 mg of mercuric chloride, measure 5 mL of DMF, 700 ul of ME, and 200 ul of BTA, and mix them to obtain a mixed exchange solution. The mixed exchange solution is the mercuric halide exchange solution.
[0056] (3) The cadmium telluride quantum dot solution was diluted to 10 mg / mL, 5 mL of the solution was added to the mercuric halide exchange solution, and the solution was shaken for 1 minute to allow a cation exchange reaction to occur, and then allowed to stand.
[0057] (4) Remove the supernatant, add 5 mL of n-octane, shake for 30 seconds, let stand to separate the layers, remove the supernatant, and repeat this cycle three times.
[0058] (5) Take out the lower half of the black solution, add 3 times the anti-solvent toluene, centrifuge at 9000r / min for 3min, invert and drain after centrifugation, and add 100ul DMF to prepare a small-sized mercury telluride quantum dot slurry.
[0059] (6) Placing the substrate on a spin coater, setting the parameters to a spin coating speed of 6000 revolutions per minute, a spin coating acceleration of 500 radians per square second, and a spin coating time of 60 seconds; dropping a small-sized mercury telluride quantum dot slurry on the substrate to obtain a small-sized mercury telluride film.
[0060] Embodiment 2:
[0061] In the embodiment of the present application, the mercuric halide is mercuric iodide.
[0062] The specific steps of the preparation method of small-sized mercury telluride film are as follows:
[0063] (1) Preparation of cadmium telluride quantum dots: A tellurium precursor is added to a cadmium chloride oleylamine solution containing a long-chain ligand to synthesize a CdTe quantum dot solution with an absorption cutoff wavelength of 500 nm to 800 nm; wherein the tellurium precursor is a tellurium oxide (TeO) precursor solution dissolved in DDT;
[0064] (2) Preparation of mercuric halide exchange solution: weigh 227 mg of mercuric iodide, measure 5 mL of DMF, 700 ul of ME, and 200 ul of BTA and mix them;
[0065] (3) diluting the cadmium telluride quantum dot solution in (1) to 10 mg / mL, adding 5 mL of the mercuric halide exchange solution in (2), shaking for 1 minute to allow a cation exchange reaction to occur, and then allowing to stand;
[0066] (4) Remove the supernatant, add 5 mL of n-octane, shake for 30 seconds, let stand to separate, remove the supernatant, and repeat this cycle three times;
[0067] (5) Take out the lower half of the black solution, add 3 times the anti-solvent toluene, centrifuge at 9000r / min for 3min, invert and drain after centrifugation, and add 100ul DMF to prepare a small-sized mercury telluride quantum dot slurry;
[0068] (6) Placing the substrate on a spin coater, setting the parameters to a spin coating speed of 6000 revolutions per minute, a spin coating acceleration of 500 radians per square second, and a spin coating time of 60 seconds; dropping a small-sized mercury telluride quantum dot slurry on the substrate to obtain a small-sized mercury telluride film.
[0069] Embodiment 3:
[0070] In the embodiment of the present application, the mercuric halide is mercuric bromide, and the specific steps of the preparation method of the small-sized mercury telluride film are as follows:
[0071] (1) Preparation of cadmium telluride quantum dots: A tellurium precursor is added to a cadmium chloride oleylamine solution containing a long-chain ligand to synthesize a CdTe quantum dot solution with an absorption cutoff wavelength of 500 nm to 800 nm; wherein the tellurium precursor is a tellurium oxide (TeO) precursor solution dissolved in DDT.
[0072] (2) Preparation of mercuric halide exchange solution: Weigh 180 mg of mercuric bromide, measure 5 mL of DMF, 700 ul of ME, and 200 ul of BTA and mix them.
[0073] (3) The cadmium telluride quantum dot solution was diluted to 10 mg / mL, 5 mL of the solution was added to the mercuric halide exchange solution, and the solution was shaken for 1 minute to allow a cation exchange reaction to occur, and then allowed to stand.
[0074] (4) Remove the supernatant, add 5 mL of n-octane, shake for 30 seconds, let stand to separate the layers, remove the supernatant, and repeat this cycle three times.
[0075] (5) Take out the lower half of the black solution, add 3 times the anti-solvent toluene, centrifuge at 9000r / min for 3min, invert and drain after centrifugation, and add 100ul DMF to prepare a small-sized mercury telluride quantum dot slurry.
[0076] (6) Placing the substrate on a spin coater, setting the parameters to a spin coating speed of 6000 revolutions per minute, a spin coating acceleration of 500 radians per square second, and a spin coating time of 60 seconds; dropping a small-sized mercury telluride quantum dot slurry on the substrate to obtain a small-sized mercury telluride film.
[0077] Figure 3 A schematic diagram of a short-wave infrared detector structure prepared by a small-sized mercury telluride film provided for the implementation of this application. The short-wave infrared detector includes a top electrode, a small-sized mercury telluride film, a selenium-doped mercury telluride quantum dot layer, an electron transport layer, a bottom electrode, and a substrate.
[0078] Figure 4 A film absorption diagram of a small-sized mercury telluride film after using different halogenated liquid phase cation exchange for the implementation of this application; Figure 5 A current-voltage diagram of a short-wave infrared detector prepared by using a small-sized mercury telluride film for the implementation of the present application after cation exchange with different halogenated liquid phases. Figure 6 A transmission electron microscope image of cadmium telluride quantum dots in the preparation of a small-sized mercury telluride film provided for the implementation of this application. Figure 7 A diagram of the element ratios of a small-sized mercury telluride film after cation exchange using different halogenated liquid phases provided for the implementation of the present application.
[0079] from Figure 7 It can be seen from the ratio of elements in the film after exchange that mercury telluride is generated after different mercury halide exchanges, and there is a small amount of halogen residue in the spin-coated film. Figure 4 The absorption curves of the films show that the degree of red shift of the absorption peak after exchange is different, proving that the sizes of the different mercury halides exchanged are slightly different. And from the current-voltage diagram of the device prepared with the three films as the hole transport layer, as shown in Figure 5 As shown, it can be seen that the device performance is good, with good PN junction rectification characteristics. Among them, the film exchanged with mercuric chloride has the best performance and the lowest dark current.
[0080] In the small-sized mercury telluride film and its preparation method, and the short-wave infrared detector of the present application, the small-sized mercury telluride film and its preparation method include: in an anhydrous and oxygen-free environment, mercury halide is mixed and shaken with DMF, ME, and BTA to obtain a mixed exchange solution; in an anhydrous and oxygen-free environment, CdTe quantum dot solution is added to the mixed exchange solution and shaken to generate a cation exchange reaction to produce a mercury telluride quantum dot solution; in an anhydrous and oxygen-free environment, the mercury telluride quantum dot solution is cleaned and purified with a cleaning agent and an anti-solvent, and a dispersant is added after centrifugation to prepare a mercury telluride quantum dot slurry; in an anhydrous and oxygen-free environment, the mercury telluride quantum dot slurry is spin-coated to prepare a small-sized mercury telluride film. The present application can improve the quality of the mercury telluride film.
[0081] In summary, the short-wave infrared detector designed in this application forms a good p-on-n type PN junction by utilizing the mercury telluride hole transport prepared by solid-phase cation exchange of selenium-doped mercury telluride quantum dot layer and cadmium telluride quantum dot, thereby realizing the preparation of devices with low dark current and high light response under short-wave infrared, and at the same time demonstrating the application potential of quantum dot infrared detectors in the future.
[0082] The above are only implementation methods of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A method for preparing a small-sized mercury telluride thin film, characterized in that: The following steps are involved: In an anhydrous and oxygen-free environment, mercuric halide is mixed and shaken with DMF, ME, and BTA to obtain a mixed exchange solution; In an anhydrous and oxygen-free environment, adding a CdTe quantum dot solution to the mixed exchange solution and shaking the solution to generate a mercury telluride quantum dot solution by a cation exchange reaction; In an anhydrous and oxygen-free environment, the mercury telluride quantum dot solution is cleaned and purified using a cleaning agent and an anti-solvent, and a dispersant is added after centrifugation to prepare a mercury telluride quantum dot slurry; In a water-free and oxygen-free environment, the mercury telluride quantum dot slurry is spin-coated to prepare a small-sized mercury telluride film.
2. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The mercuric halide includes at least one of mercuric chloride, mercuric bromide and mercuric iodide, and the concentration of the mercuric halide in the mixed exchange liquid is 0.1 mol / L-2 mol / L.
3. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The volume ratio of ME to BTA in the mixed exchange solution is 1:1 to 1:
10.
4. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The step of adding the CdTe quantum dot solution to the mixed exchange solution in an anhydrous and oxygen-free environment and shaking the mixed exchange solution to generate a mercury telluride quantum dot solution by a cation exchange reaction includes: In an anhydrous and oxygen-free environment, the CdTe quantum dot solution is added to the mixed exchange solution and shaken for 30 seconds to 120 seconds, so that a cation exchange reaction occurs to produce a mercury telluride quantum dot solution.
5. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The concentration of the CdTe quantum dot solution is 1 mg / mL to 1000 mg / mL.
6. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The mercuric halide is mixed and shaken with DMF, ME and BTA in an anhydrous and oxygen-free environment to obtain a mixed exchange solution, comprising: In an anhydrous and oxygen-free environment, the mercuric halide is mixed with DMF, ME, and BTA and shaken for 30 to 120 seconds to obtain a mixed exchange solution.
7. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The cleaning agent is n-octane.
8. The method for preparing a small-sized mercury telluride thin film according to claim 1, characterized in that: The anti-solvent includes at least one of ethanol, methanol and toluene.
9. A small-sized mercury telluride thin film, characterized in that: The small-sized mercury telluride film is prepared by the method according to any one of claims 1 to 8 above.
10. A short-wave infrared detector, characterized in that: The short-wave infrared detector comprises a top electrode, a small-sized mercury telluride film, a selenium-doped mercury telluride quantum dot layer, an electron transport layer, a bottom electrode and a substrate. The small-sized mercury telluride film is the small-sized mercury telluride film described in claim 9.