Micro chip with light absorption layer and preparation method

Abstract

The invention discloses a Micro chip with a light absorption layer and a preparation method, the Micro chip comprises a display area, the display area comprises a Micro array structure, and the Micro array structure comprises a plurality of Micro structures and is used for emitting light; the peripheral area is located on the periphery of the display area; the peripheral light absorption layer is located in the peripheral area, and the peripheral light absorption layer is used for absorbing light rays which are emitted by the Micro array structure and are reflected to the peripheral area by an external object. When the Micro structure of the display area of the Micro chip emits light and light irradiates on the optical waveguide on the near-eye display device, the light is reflected back to the peripheral area by the optical waveguide, and the peripheral light absorption layer on the peripheral area absorbs the light reflected back by the optical waveguide, so that the reflectivity of light of each wave band can be greatly reduced, and the display effect of the near-eye display device is improved. Therefore, the problem that light emitted by a Micro structure in a Micro chip display area is reflected back to the peripheral area by the optical waveguide and then is reflected back to the optical waveguide to cause ghosting is solved, and the display effect on the near-to-eye display equipment is improved.

Description

Microled chip with light-absorbing layer and preparation method thereof Technical Field

[0001] The present invention relates to the field of micro-display technology, and in particular to a MicroLED chip with a light-absorbing layer and a preparation method thereof. Background Art

[0002] Inorganic micro-light-emitting diodes, also known as "micro-LEDs" or microLEDs, are gaining increasing attention for applications in a variety of fields, including self-luminous microdisplays, visible light communications, and optogenetics. Compared to traditional organic LEDs (OLEDs) or liquid crystal display (LCD)-based microdisplays, microLEDs offer higher wall plug efficiency, higher brightness, lower efficiency droop, better thermal stability, longer lifespan, faster response rate, higher resolution, wider color gamut, and higher contrast.

[0003] MicroLED panels are made by integrating thousands or even millions of microLED arrays with a driver circuit backplane. Each pixel in a microLED panel is composed of one or more microLEDs. MicroLED panels can be either single-color or multi-color. In particular, for multi-color LED panels, each pixel can further include multiple sub-pixels formed by multiple microLEDs, each corresponding to a different color. For example, three microLEDs corresponding to red, green, and blue can be stacked to form a pixel. Different colors can be mixed to produce a variety of colors.

[0004] Various types of metals are used during the growth, manufacturing, and packaging processes of Microled chips. This means that various types of metals are present in various areas of the Microled chips used in products. The light-emitting area of ​​the Microled chip is the display area, while the area outside the display area is the peripheral area. The metal located in the peripheral area is the peripheral metal. As shown in Figure 1, when a Microled chip is used in a near-eye display device, when the light source in the Microled chip display area 100 illuminates the optical waveguide 400 on the near-eye display device, the light from the light source is reflected by the optical waveguide 400 back to the peripheral metal 201 of the Microled chip. The peripheral metal 201 then reflects the received light back to the optical waveguide 400, resulting in ghosting and affecting the display quality of the Microled chip on the near-eye display device.

[0005] Summary of the Invention

[0006] To this end, the present invention aims to provide a MicroLED chip with a light-absorbing layer and a method for manufacturing the same. These methods effectively address the problems of the prior art by enabling light from the display area to be absorbed by the peripheral light-absorbing layer when reflected by external objects to the peripheral area. This solves the problem of ghosting caused by light emitted from the MicroLED structure in the display area of ​​the MicroLED chip being reflected by the optical waveguide back to the peripheral area and then reflected back to the optical waveguide again.

[0007] To achieve the above objectives, the present invention discloses a MicroLED chip having a light absorbing layer, which is characterized by comprising:

[0008] a display area, the display area including a MicroLED array structure, the MicroLED array structure including a plurality of MicroLED structures and configured to emit light;

[0009] a peripheral area located around the display area; and

[0010] A peripheral light absorption layer is located in the peripheral area and is used to absorb light emitted by the MicroLED array structure reflected by external objects to the peripheral area.

[0011] The peripheral region includes a peripheral metal, and the peripheral light absorption layer is formed on the peripheral metal.

[0012] Wherein, the surface of the peripheral light absorption layer away from the peripheral metal adopts a flat structure.

[0013] Wherein, a groove is provided on a side of the peripheral light absorption layer away from the peripheral metal.

[0014] Wherein, a protruding structure is provided on a side of the peripheral light absorption layer away from the peripheral metal.

[0015] Wherein, a wave structure is provided on a side of the peripheral light absorption layer away from the peripheral metal, and the wave structure includes at least one wave crest and at least one wave trough.

[0016] Wherein, a slope structure is provided on a side of the peripheral light absorption layer away from the peripheral metal.

[0017] The thickness of the peripheral light absorption layer is 0.2 μm-10 μm, and the thickness is the vertical distance between the surface of the peripheral light absorption layer close to the peripheral metal and the surface far from the peripheral metal.

[0018] The display area is provided with a microlens array, and the microlens array includes a plurality of microlenses, and the microlenses are correspondingly arranged on a light emitting path of the Microled structure.

[0019] Wherein, a display light absorption layer is formed in the gap between the adjacent micro lenses in the display area.

[0020] Wherein, the material of the peripheral light absorption layer and the display light absorption layer is at least one of BPR photoresist, gray glue, inorganic anti-reflection material, and black inorganic matter.

[0021] The display area further includes an electrode, which is disposed around the Microled structure and electrically connected to the Microled structure.

[0022] Wherein, a driving backplane is further included, and the display area and the peripheral area are formed on the driving backplane.

[0023] Also disclosed is a method for preparing a MicroLED chip having a light absorbing layer, which is characterized by comprising the following steps:

[0024] A MicroLED chip is provided, wherein the MicroLED chip includes a display area, a peripheral area, and a driving backplane, wherein the display area and the peripheral area are formed on the driving backplane, the display area includes a MicroLED array structure, and the MicroLED array structure includes a plurality of MicroLED structures;

[0025] forming a light absorbing layer on a side of the display area and the peripheral area away from the driving backplane;

[0026] exposing and developing the light absorbing layer in the display area; and

[0027] The developed light absorbing layer is heated and cured.

[0028] Wherein, in the step of exposing and developing the light absorbing layer in the display area, the following steps are further performed:

[0029] The light absorption layer in the entire display area is exposed and developed to form a peripheral light absorption layer in the peripheral area.

[0030] The method further comprises the following steps:

[0031] Disposing a plurality of micro lenses on a light emitting path of the display area, wherein the micro lenses are disposed correspondingly to the MicroLED structure;

[0032] Furthermore, in the step of exposing and developing the light absorbing layer in the display area, the following steps are further performed:

[0033] The display area outside the gaps between adjacent microlenses is exposed and developed to form a peripheral light absorption layer in the peripheral area, and a display light absorption layer is formed in the gaps between adjacent microlenses in the display area.

[0034] The step of exposing and developing the light absorbing layer in the display area further includes the following steps:

[0035] Before development, the exposed light absorbing layer is heated, wherein the heating temperature is 110° C.-120° C. and the heating time is 1 min-2 min.

[0036] Wherein, in the step of heating and curing the developed light-absorbing layer, the heating temperature is 135° C.-150° C., and the heating time is 60 min-90 min.

[0037] Therefore, the beneficial effect of the present invention is that a peripheral light absorption layer is formed on the peripheral area of ​​the Microled chip. When light from the display area is reflected by external objects to the peripheral area, it can be absorbed by the peripheral light absorption layer, thereby solving the problem of ghosting caused by light emitted by the Microled structure in the display area of ​​the Microled chip being reflected back to the peripheral area by the optical waveguide and then reflected back to the optical waveguide again. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The above and other objects, features and advantages of the present disclosure will become more apparent through a more detailed description of exemplary embodiments of the present disclosure with reference to the accompanying drawings, wherein like reference numerals generally represent like components in the exemplary embodiments of the present disclosure.

[0039] FIG1 is a light path diagram of a prior art Microled chip when applied to a display device.

[0040] FIG2 is a light path diagram of the Microled chip of the present invention when applied to a near-eye display device.

[0041] FIG. 3 is a top view of a Microled chip according to an embodiment of the present invention.

[0042] FIG. 4 is a top view of a Microled chip according to another embodiment of the present invention.

[0043] FIG5 a is a cross-sectional view of the Microled chip shown in FIG3 along line AA.

[0044] FIG. 5 b is a schematic diagram of a modified embodiment of a cross-sectional view of the Microled chip along line AA shown in FIG. 3 .

[0045] FIG. 5 c is a schematic diagram of another variant embodiment of a cross-sectional view of the Microled chip shown in FIG. 3 along line AA.

[0046] FIG5 d is a schematic diagram of another modified embodiment of the cross-sectional view of the Microled chip shown in FIG3 along line AA.

[0047] FIG. 5 e is a schematic diagram of another variant embodiment of a cross-sectional view of the Microled chip shown in FIG. 3 along line AA.

[0048] FIG. 6 is a schematic diagram of another modified embodiment of a cross-sectional view of the Microled chip shown in FIG. 3 along line AA.

[0049] FIG. 7 is a schematic diagram of another modified embodiment of a cross-sectional view of the Microled chip shown in FIG. 3 along line AA.

[0050] FIG8 a is a cross-sectional view of the Microled chip shown in FIG4 along line BB.

[0051] FIG8 b is a schematic diagram of a modified embodiment of a cross-sectional view of the Microled chip along line BB shown in FIG4 .

[0052] FIG. 9 a is a flow chart of a method for manufacturing a Microled chip according to an embodiment of the present invention.

[0053] FIG. 9 b is a flow chart of sub-steps of a method for manufacturing a Microled chip according to an embodiment of the present invention.

[0054] FIG. 10 is a comparison diagram of the reflectivity of the Microled chip of the present invention and the existing Microled chip. DETAILED DESCRIPTION

[0055] The preferred embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. Rather, these embodiments are provided to make the present disclosure more thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art.

[0056] As shown in FIG3 , the Microled chip includes a display area 100 and a peripheral area 200 . The display area 100 is a light-emitting area, and the peripheral area 200 is a non-light-emitting area. The peripheral area 200 is located around the display area 100 .

[0057] As shown in Figure 5a, the peripheral region 200 is formed with a peripheral light absorption layer 202. Light emitted by the display region 100 can be absorbed by the peripheral light absorption layer 202 when reflected by external objects. The peripheral region 200 includes a peripheral metal 201, on which the peripheral light absorption layer 202 is formed. The peripheral metal 201 can be the peripheral electrode of the microled chip, a metal used for other purposes, or metal impurities found during the microled chip manufacturing process. The display region 100 is provided with a microlens array comprising a plurality of microlenses 102, which are arranged correspondingly along the light emission path of the microled structure 101. The display region 100 also includes electrodes 103, to which the microlenses 102 are connected. The microled chip also includes a driver backplane 300. The display region 100 and the peripheral region 200 are formed on the driver backplane 300. The driver backplane 300 is used to drive the display region 100 of the microled chip to emit light.

[0058] Specifically, as shown in FIG5a , the display area 100 includes a microled array structure, which includes multiple microled structures 101. Microled structures 101 are capable of self-luminescence. Microled structures 101 can adopt face-up, flip-chip, or vertical structures. They can also adopt mesa structures, including but not limited to Mesa, cylindrical, hemispherical, and ellipsoidal mesa structures. Each microled structure 101 is provided with a corresponding microlens 102, which is positioned along the light-emitting path of the microled structure 101. That is, each microlens 102 corresponds to a microled structure 101, and each microled structure 101 is provided with a corresponding microlens 102. Light emitted by the microled structure 101 is transmitted through the corresponding microlens 102. The shape of the microlens 102 can be hemispherical, conical, pyramidal, cylindrical, and the like, and the shape of the microlens 102 is not limited in the present invention. Electrodes 103 of display area 100 are disposed around and electrically connected to microled structure 101. Electrodes 103 are made of metal, such as Au, Ti, Al, Pt, or Wu. Adjacent microlenses 102 are connected to electrodes 103 at the same connection point.

[0059] As shown in FIG5a, a light-absorbing material, such as BPR photoresist, gray glue, inorganic anti-reflective material (such as ZnO-SiO2), black inorganic material (such as carbon nanotubes, etc.), is plated on the side of the display area 100 and the peripheral area 200 away from the driving backplane 300. The material of the light-absorbing layer in the present invention is BPR photoresist. Through the photolithography process, a peripheral light-absorbing layer 202 is formed on the peripheral metal 201 of the peripheral area 200. The peripheral light-absorbing layer 202 is formed around the display area 100, and there is no light-absorbing layer on the side of the display area 100 away from the driving backplane 300. The surface of the peripheral light-absorbing layer 202 away from the peripheral metal 201 adopts a flat structure 2021, that is, the surface of the peripheral light-absorbing layer 202 away from the peripheral metal 201 is flat. The thickness of the peripheral light absorption layer 202 is 0.2μm-10μm, and the thickness is the vertical distance between the surface of the peripheral light absorption layer 202 close to the peripheral metal 201 and the surface far away from the peripheral metal 201, that is, the vertical distance between the surface of the peripheral light absorption layer 202 with the shortest distance from the peripheral metal 201 and the surface of the peripheral light absorption layer 202 with the longest distance from the peripheral metal 201 is the thickness of the peripheral light absorption layer 202.

[0060] Figure 2 shows the optical path of the MicroLED chip of the present invention when used in a near-eye display device. Referring to Figure 2, when the MicroLED structure 101 in the display area 100 emits light, the light strikes the optical waveguide 400 on the near-eye display device and is reflected back to the peripheral area 200 of the MicroLED chip. The peripheral light absorption layer 202 absorbs the light reflected by the optical waveguide 400, thereby reducing the reflectivity of light in each wavelength band. As shown in Figure 10, compared to existing MicroLEDs, the reflectivity of the MicroLED of the present invention when used in a near-eye display device is reduced from 33% to 4.7% in the blue light band, from 82% to 5.5% in the green light band, and from 100% to 8.4% in the red light band. The peripheral light absorption layer 202 of the peripheral metal 201 on the peripheral area 200 absorbs the light emitted by the light source in the MicroLED chip display area 100 that is reflected back to the peripheral area 200 by the optical waveguide 400 on the near-eye display device, reducing the reflectivity of the light in the peripheral area 200 and thus improving the display quality of the near-eye display device.

[0061] As shown in Figure 5b , the side of the peripheral light absorption layer 202 facing away from the peripheral metal 201 may further include a groove 2022. Specifically, the surface of the peripheral light absorption layer 202 facing away from the peripheral metal 201 is recessed toward the peripheral metal 201, forming the groove 2022. The groove 2022 increases the absorption area of ​​the peripheral light absorption layer 202, better absorbing light emitted from the MicroLED structure 101 in the MicroLED chip display area 100 that is reflected back to the peripheral area 200 by the optical waveguide 400 on the near-eye display device. Furthermore, the groove 2022 can further absorb light reflected from the peripheral light absorption layer 202, significantly reducing the reflectivity of the light and improving the display quality on the near-eye display device. The groove 2022 has an opening located on the side facing away from the peripheral metal 201. Preferably, the projection of the opening of the groove 2022 on the peripheral metal 201 completely covers the peripheral metal 201.

[0062] In some embodiments, the projection of the opening of the groove 2022 on the peripheral metal 201 may also partially cover the peripheral metal 201. In some embodiments, a plurality of grooves 2022 may be provided on the side of the peripheral light absorbing layer 202 away from the peripheral metal 201. The plurality of grooves 2022 may be provided discretely, i.e., each groove 2022 is independent, and adjacent grooves 2022 are provided at intervals; or the grooves 2022 may be provided continuously, i.e., adjacent ends of the openings of adjacent grooves 2022 are directly connected together; or the grooves 2022 may be provided both discretely and continuously, with the discrete and continuous arrangements being arranged regularly or irregularly.

[0063] As shown in Figure 5c, a raised structure 2023 is provided on the side of the peripheral light absorption layer 202 away from the peripheral metal 201. This raised structure 2023 increases the absorption area of ​​the peripheral light absorption layer 202, better absorbing light emitted from the MicroLED structure 101 in the MicroLED chip display area 100 that is reflected back to the peripheral area 200 by the optical waveguide 400 on the near-eye display device. This reduces reflectivity and improves the display quality on the near-eye display device. The projection of the raised structure 2023 on the peripheral metal 201 completely covers the peripheral metal 201.

[0064] In some embodiments, the projection of the raised structure 2023 on the peripheral metal 201 may also partially cover the peripheral metal 201. In some embodiments, multiple raised structures 2023 may also be provided on the side of the peripheral light absorbing layer 202 away from the peripheral metal 201. The multiple raised structures 2023 may be provided discretely, i.e., each raised structure 2023 is independent, and adjacent raised structures 2023 are provided at intervals; or the raised structures 2023 may be provided continuously, i.e., adjacent ends of adjacent raised structures 2023 near the peripheral metal 201 are directly connected together; or the raised structures 2023 may be provided both discretely and continuously, with the discrete and continuous arrangements being arranged regularly or irregularly.

[0065] As shown in Figure 5d, the side of the peripheral light absorption layer 202 facing away from the peripheral metal 201 is provided with a wavy structure. This wavy structure increases the absorption area of ​​the peripheral light absorption layer 202, better absorbing light emitted from the MicroLED structure 101 in the MicroLED chip display area 100 that is reflected back to the peripheral area 200 by the optical waveguide 400 on the near-eye display device. This reduces reflectivity and improves the display quality on the near-eye display device. The wavy structure includes at least one crest 2024 and at least one trough 2025. The crest 2024 and trough 2025 of the wavy structure are arranged continuously. The crest 2024 is located on the side of the peripheral light absorption layer 202 facing away from the peripheral metal 201, while the trough 2025 is located on the side of the peripheral light absorption layer 202 facing closer to the peripheral metal 201. The trough 2025 and the peripheral metal 201 are in contact with each other. The projection of the wavy structure on the peripheral metal 201 from the end facing away from the display area 100 to the end facing closer to the display area 100 completely covers the peripheral metal 201.

[0066] The projection of the wave structure between the end away from the display area 100 and the end close to the display area 100 on the peripheral metal 201 can also partially cover the peripheral metal 201; and the trough 2025 of the wave structure and the peripheral metal 201 can also be arranged non-contact.

[0067] As shown in Figure 5e, a bevel structure 2026 is provided on the side of the peripheral light absorption layer 202 away from the peripheral metal 201. Along the direction approaching the display area 100, the angle between the end of the bevel structure 2026 near the peripheral metal 201 and the horizontal line along the direction approaching the display area 100 includes an acute angle α and an obtuse angle β. Preferably, a single bevel structure 2026 is provided on the side of the peripheral light absorption layer 202 away from the peripheral metal 201, and the angle between the end of the bevel structure 2026 near the peripheral metal 201 and the horizontal line along the direction approaching the display area 100 is only one type, namely, an obtuse angle β (greater than 90°). The peripheral light absorption layer 202 may also be provided with multiple bevel structures 2026 on the side away from the peripheral metal 201, and along the direction approaching the display area 100, the angle between the end of the bevel structure 2026 near the peripheral metal 201 and the horizontal line along the direction approaching the display area 100 includes both an acute angle α and an obtuse angle β, and the arrangement of the acute angle α and the obtuse angle β is not limited.

[0068] A slope structure 2026 is provided on the side of the peripheral light absorption layer 202 away from the peripheral metal 201 . The angle between the end of the slope structure 2026 close to the peripheral metal 201 and the horizontal line along the direction close to the display area 100 can also be only an acute angle α (less than 90°).

[0069] A plurality of inclined structures 2026 are provided on the side of the peripheral light absorption layer 202 away from the peripheral metal 201. Along the direction close to the display area 100, the angles between the end of the inclined structure 2026 close to the peripheral metal 201 and the horizontal line along the direction close to the display area 100 can all be acute angles or all be obtuse angles.

[0070] As shown in FIG6 , the difference from FIG5 a is that the microlenses 102 of the microlens array in the display area 100 are connected to the electrode 103 , but adjacent microlenses 102 are not connected to each other, that is, adjacent end sides of adjacent microlenses 102 are connected to the same electrode 103 , but there is a gap between the connections.

[0071] As shown in FIG. 7 , the difference from FIG. 5 a is that each microlens 102 of the microlens array in the display area 100 does not contact the electrode 103 , and the bottom of the connection between adjacent microlenses 102 is higher than the top of the electrode 103 .

[0072] As shown in FIG. 4 , a display light absorption layer 104 may also be formed in the display area 100 of the Microled chip.

[0073] As shown in FIG8a , the difference from FIG5a is that a display light absorption layer 104 can be formed in the gaps between adjacent microlenses 102 of the microlens array in the display area 100. The display light absorption layer 104 fills the gaps between adjacent microlenses 102. In other words, the display light absorption layer 104 is formed between adjacent microlenses 102, and the display light absorption layer 104 completely fills the gaps between adjacent microlenses 102. The display light absorption layer 104 can be used to absorb crosstalk light between the MicroLED structures 101, effectively improving the projection and light absorption effects.

[0074] As shown in FIG. 8 b , the difference from FIG. 8 a is that the light absorption layer 104 is formed in the gaps between adjacent microlenses 102 , but there is a gap between the light absorption layer 104 and the microlenses 102 , indicating that the light absorption layer 104 does not completely fill the gaps between the microlenses 102 .

[0075] Some embodiments of the present invention also provide a method for preparing a Microled chip having a light absorbing layer.

[0076] FIG9 a shows a flowchart of a method for preparing a MicroLED chip with a light absorbing layer according to an embodiment of the present invention. Referring to FIG9 a , the manufacturing method includes steps S1 to S4 .

[0077] In step S1, a MicroLED chip is provided. The MicroLED chip includes a display area 100, a peripheral area 200, and a driving backplane 300. The display area 100 and the peripheral area 200 are formed on the driving backplane 300. The display area 100 includes a MicroLED array structure, which includes multiple MicroLED structures 101. Multiple microlenses 102 are arranged on the light-emitting path of the display area 100, and the microlenses 102 are arranged corresponding to the MicroLED structures 101.

[0078] In step S2, a light absorbing layer is formed on the side of the display area 100 and the peripheral area 200 away from the driving backplane 300. In some embodiments, a light absorbing material, such as BPR photoresist, is coated on the surface of the display area 100 and the peripheral area 200 away from the driving backplane 300 to form the light absorbing layer.

[0079] In step S3 , the light absorption layer of the display area 100 is exposed and developed.

[0080] In step S4, the developed light-absorbing layer is heated and cured. In practice, this can be done by directly heating the light-absorbing layer using an oven, a resistance furnace, a spray gun, or other tools. In a preferred embodiment, the heating temperature is 135°C to 150°C, and the heating time is 60 minutes to 90 minutes.

[0081] As shown in FIG9 b , the above step S3 includes the following steps S31 to S33 .

[0082] In step S31, the light absorption layer of the display area 100 is exposed. The light absorption layer, such as the BPR photoresist layer, is exposed in the entire display area 100 using a mask, or the light absorption layer in the display area 100 outside the gaps between adjacent microlenses 102 is exposed using a mask.

[0083] In step S32, the exposed light-absorbing layer is heated. The MicroLED chip can be baked using an oven, resistance furnace, or other methods, or the light-absorbing layer can be directly heated using a spray gun or other tools. In a preferred embodiment, the heating temperature is 110°C to 120°C, and the heating time is 1-2 minutes.

[0084] In step S33, the light-absorbing layer heated in step S32 is developed. This development can be performed using a developer such as tetramethylammonium hydroxide. Based on the mask from step S31, a microled chip can be obtained in which a peripheral light-absorbing layer 202 is formed in the peripheral region 200, as shown in Figures 5a, 5b, 5c, 5d, 5e, 6, and 7. Alternatively, a microled chip can be obtained in which a peripheral light-absorbing layer 202 is formed in the peripheral region 200 and a display light-absorbing layer 104 is formed in the gaps between adjacent microlenses 102 in the display region 100, as shown in Figures 8a and 8b.

[0085] It should be noted that relational terms in this document, such as "first" and "second", are used only to distinguish an entity or operation from another entity or operation, and do not require or imply any actual relationship or order between these entities or operations. In addition, the words "include", "have" and "include" and other similar forms are intended to be equivalent in meaning and are open-ended, and one or more items following any of these words are not intended to be an exhaustive list of such one or more items, or to be limited to the listed one or more items.

[0086] As used herein, unless expressly stated otherwise, the term "or" encompasses all possible combinations unless not feasible. For example, if a component is stated to include either A or B, then unless expressly stated otherwise or not feasible, the component may include A, or B, or A and B. As a second example, if a component is stated to include either A, B, or C, then unless expressly stated otherwise or not feasible, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A, B, and C.

[0087] In the foregoing description, embodiments have been described with reference to many specific details, which may vary depending on the implementation. Certain changes and modifications may be made to the described embodiments. Other embodiments will be clear to those skilled in the art in view of the description and practice of the invention disclosed herein. The description and examples are intended to be regarded as merely exemplary, with the true scope and spirit of the invention being indicated by the following claims. The order of steps shown in the accompanying drawings is also intended to be for illustrative purposes only and is not intended to be limited to any particular order of steps. Therefore, it will be understood by those skilled in the art that these steps may be performed in different orders while implementing the same method.

[0088] In the drawings and the specification, exemplary embodiments have been disclosed. However, many variations and modifications may be made to these embodiments. Therefore, although specific terms are employed, they are used in a general and descriptive sense only and not for the purpose of limitation.

Claims

1. A Microled chip with a light absorbing layer, characterized in that include: a display area, wherein the display area includes a Microled array structure, wherein the Microled array structure includes a plurality of Microled structures and is used to emit light; a peripheral area, the peripheral area being located around the display area; as well as A peripheral light absorption layer is located in the peripheral area and is used to absorb light emitted by the Microled array structure reflected by external objects to the peripheral area.

2. The Microled chip with a light absorbing layer according to claim 1, characterized in that: The peripheral region includes a peripheral metal, and the peripheral light absorption layer is formed on the peripheral metal.

3. The Microled chip with a light absorbing layer according to claim 2, characterized in that: The surface of the peripheral light absorption layer away from the peripheral metal has a flat structure.

4. The Microled chip with a light absorbing layer according to claim 2, characterized in that: A groove is provided on a side of the peripheral light absorption layer away from the peripheral metal.

5. The Microled chip with a light absorbing layer according to claim 2, characterized in that: A protruding structure is disposed on a side of the peripheral light absorbing layer away from the peripheral metal.

6. The Microled chip with a light absorbing layer according to claim 2, characterized in that: A wave structure is provided on a side of the peripheral light absorption layer away from the peripheral metal, and the wave structure includes at least one wave crest and at least one wave trough.

7. The Microled chip with a light absorbing layer according to claim 2, characterized in that: A slope structure is provided on a side of the peripheral light absorption layer away from the peripheral metal.

8. The Microled chip with a light absorbing layer according to claim 2, characterized in that: The thickness of the peripheral light absorption layer is 0.2 μm-10 μm, and the thickness is the vertical distance between the surface of the peripheral light absorption layer close to the peripheral metal and the surface far from the peripheral metal.

9. The Microled chip with a light absorbing layer according to claim 2, characterized in that: The display area is provided with a microlens array, and the microlens array includes a plurality of microlenses, and the microlenses are correspondingly arranged on a light emitting path of the Microled structure.

10. The Microled chip with a light absorbing layer according to claim 9, characterized in that: A display light absorption layer is formed in the gap between the adjacent micro lenses in the display area.

11. The Microled chip with a light absorbing layer according to claim 10, characterized in that: The material of the peripheral light absorption layer and the display light absorption layer is at least one of BPR photoresist, gray glue, inorganic anti-reflection material, and black inorganic matter.

12. The Microled chip with a light absorbing layer according to claim 11, characterized in that: The display area further includes an electrode, which is disposed around the Microled structure and electrically connected to the Microled structure.

13. The Microled chip with a light absorbing layer according to claim 12, characterized in that: A driving backplane is also included, and the display area and the peripheral area are formed on the driving backplane.

14. A method for preparing a Microled chip having a light absorbing layer, characterized in that The following steps are involved: A Microled chip is provided, wherein the Microled chip comprises a display area, a peripheral area and a driving backplane, wherein the display area and the peripheral area are formed on the driving backplane, the display area comprises a Microled array structure, and the Microled array structure comprises a plurality of Microled structures; Forming a light absorption layer on the display area and the peripheral area at a side away from the driving backplane; exposing and developing the light absorbing layer in the display area; as well as The developed light absorbing layer is heated and cured.

15. The method for preparing a Microled chip with a light absorbing layer according to claim 14, characterized in that: In the step of exposing and developing the light absorbing layer in the display area, further comprising: The light absorption layer in the entire display area is exposed and developed to form a peripheral light absorption layer in the peripheral area.

16. The method for preparing a Microled chip with a light absorbing layer according to claim 14, characterized in that: Further comprising the steps of: A plurality of micro lenses are arranged on a light emitting path of the display area, wherein the micro lenses are arranged corresponding to the Microled structure; Furthermore, in the step of exposing and developing the light absorbing layer in the display area, the following steps are further performed: The display area outside the gaps between adjacent microlenses is exposed and developed to form a peripheral light absorption layer in the peripheral area, and a display light absorption layer is formed in the gaps between adjacent microlenses in the display area.

17. The method for preparing a Microled chip with a light absorbing layer according to claim 15 or 16, characterized in that: The step of exposing and developing the light absorbing layer in the display area further includes the following steps: Before development, the light absorbing layer after exposure is heated, wherein the heating temperature is 110° C.-120° C., and the heating time is 1 min-2 min.

18. The method for preparing a Microled chip with a light absorbing layer according to claim 14, characterized in that: In the step of heating and curing the developed light absorbing layer, the heating temperature is 135° C.-150° C., and the heating time is 60 min-90 min.

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