Quartz crucible with non-rectangular or non-circular cross section for drawing rectangular silicon single crystal and method for growing rectangular silicon single crystal ingot by using czochralski method

Abstract

The invention relates to the technical field of silicon single crystal preparation, and provides a quartz crucible with a non-rectangular or non-circular cross section for drawing a rectangular silicon single crystal and a method for growing a rectangular silicon single crystal ingot by using a czochralski method. 4u or 2n + 2m blades protruding relative to the surface of the inner side of the quartz crucible are rotationally arranged around the z axis, and the included angle between the blades and the xy plane, namely the inhibition angle alpha1 is larger than or equal to 10 degrees and smaller than or equal to 80 degrees; one or more rotor wings protruding relative to the bottom surface of the inner cavity of the quartz crucible are arranged on the bottom surface of the inner cavity of the quartz crucible, a point P on the contour line of each rotor wing has a cut-in angle, and the range of the cut-in angle is that alpha 2 is more than 2 degrees and less than 80 degrees; therefore, the liquid silicon flow is pressed, and the oxygen content is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon single crystal preparation, and in particular to a quartz crucible with a non-rectangular or non-circular cross section for pulling rectangular silicon single crystals and a method for growing rectangular silicon single crystal ingots by using a Czochralski method. Background Art

[0002] Patent application number 202410993158.7 discloses a method for growing rectangular silicon single crystal ingots by the Czochralski method, which has the advantages of simple process, high production efficiency, and large cross-sectional area of ​​the crystal rod. However, it has the following shortcomings in terms of controlling the oxygen content of the crystal, the internal stress of the silicon single crystal rod, and the uniformity of radial impurity distribution: First, compared with pulling cylindrical silicon single crystals, when pulling rectangular silicon single crystals, both the crystal and the crucible stop rotating, and the natural thermal convection of liquid silicon lacks checks and balances, and the thermal convection of liquid silicon is relatively strong. Therefore, the scouring of the crucible wall by the thermal convection of liquid silicon causes more oxygen in the quartz crucible to enter the liquid silicon, resulting in a higher content of impurity oxygen in the silicon single crystal. In addition, the change in the height of the liquid silicon liquid level during the crystal pulling process affects the intensity of the liquid silicon thermal convection, and the segregation coefficient of impurity oxygen is greater than 1, resulting in uneven distribution of impurity oxygen in the longitudinal direction of the entire silicon single crystal ingot, generally resulting in a higher concentration of impurity oxygen in the head.

[0003] Second, when growing rectangular silicon single crystals, there is only liquid silicon heat convection but no crystal rotation or crucible rotation. The heat dissipation conditions at the center of the crystal growth interface are worse than when pulling cylindrical silicon single crystals. The liquid silicon temperature at the center is higher, making the crystal growth interface concave. The concave crystal surface will produce higher crystal internal stress in the silicon single crystal and silicon wafer. Excessive crystal internal stress will destroy the growth environment of the silicon single crystal and is the limiting factor for the maximum cross-sectional area of ​​the silicon single crystal rod. The concave crystal surface increases the internal stress on the plane of the cut silicon wafer and causes uneven distribution of impurities in the wafer.

[0004] Third, the existing technical measures for controlling the oxygen content and distribution uniformity of vertically pulled silicon single crystals include two categories: oxygen control with a magnetic field and oxygen control without a magnetic field. The former achieves the purpose of oxygen control by placing the silicon melt in a certain magnetic field environment and using the Lorentz force to form a damping on the thermal convection motion of liquid silicon. This measure is effective in controlling oxygen, but the equipment and operating costs are relatively high; the latter controls oxygen by adopting appropriate thermal field distribution, crucible position, crucible rotation, crystal rotation and other process means, and the cost is relatively low, but when pulling rectangular silicon single crystals, there is a lack of coordination between crystal rotation and crucible rotation, which makes it difficult to control the flow field in the crucible.

[0005] Fourth, when pulling a silicon single crystal ingot with a rectangular cross section in the prior art, the crucible is not conducive to rotating around the z-axis in the middle of the heater because the highest points of the four protrusions in the horizontal cross section of the crucible are at different distances from the z-axis.

[0006] The present invention is proposed to solve at least one of the above problems. It should be noted that some contents of the present invention only provide background technology related to the present invention, and do not necessarily constitute prior art or known technology. Summary of the invention

[0007] 1. Nouns and terminology: For the convenience of description, this application document defines the following nouns and terms: 1) Blade suppression angle : The angle between the tangent line of the blade contour line protruding on the top surface of the convex part of the inner cavity of the quartz crucible at a point P of the projection line of the xz plane and the xy plane. It can be understood that if the projection line of the blade contour line on the xz plane is a curve, the tangent line is the tangent line of the blade contour line at a point P; if it is a straight line, its tangent line is equal to the slope of the blade contour line.

[0008] 2) Rotor entry angle : The angle (acute angle) between the projection of the rotor contour line on the inner wall of the bottom of the quartz crucible on the xy plane and the tangent line of the circle O at point Q. The circle O is in the xy plane, the center of the circle O is on the z axis, and the radius is the distance between point Q and the z axis. .

[0009] 3) "Right-handed" and "left-handed" quartz crucible: Put the four fingers of your right hand together, with the thumb pointing downwards towards the bottom of the crucible (-z direction). The rotation direction of the four fingers represents the rotation direction Ω of the crucible, which is the "right rotation" of the crucible. Similarly, put the four fingers of your left hand together, with the thumb pointing downwards towards the bottom of the crucible (-z direction). The rotation direction of the four fingers represents the rotation direction Ω of the crucible, which is the "left rotation" of the crucible.

[0010] 4) "Right-hand" and "left-hand" rotation of blades: The blade located on the inner wall of the top of the protruding part of the quartz crucible: put the four fingers of the right hand together, with the thumb pointing downward to the bottom of the crucible (-z direction). The rotation direction of the four fingers represents the direction in which the outline of the blade rotates diagonally downward, which is considered to be the "right rotation" of the blade; similarly, put the four fingers of the left hand together, with the thumb pointing downward to the bottom of the crucible (-z direction). The rotation direction of the four fingers represents the direction in which the blade rotates diagonally downward, which is considered to be the "left rotation" of the rotor.

[0011] 5) "Right-hand rotation" and "left-hand rotation" of the rotor: The rotor at the bottom of the quartz crucible: put the four fingers of the right hand together, the thumb down, pointing to the bottom of the crucible (-z direction), the rotation direction of the four fingers represents the direction of the rotor contracting and rotating toward the crucible axis, which is considered the "right rotation" of the bottom rotor; similarly, put the four fingers of the left hand together, the thumb down, pointing to the bottom of the crucible (-z direction), the rotation direction of the four fingers represents the direction of the rotor contracting and rotating toward the crucible axis, which is considered the "left rotation" of the bottom rotor.

[0012] 6) Quasi-circle: This application document refers to a figure that is close to a circle.

[0013] 7) Transverse diameter: In this application document, it refers to the distance between the two intersection points of a straight line passing through the symmetry center of the cross section of the crucible and intersecting with two points on the opposite edges of the crucible.

[0014] 8) The "large transverse diameter" and "small transverse diameter" inside the quartz crucible: The "large transverse diameter" of a quartz crucible refers to the two longest transverse diameters of equal length that coincide with the symmetry axis of the horizontal section and are perpendicular to each other; or refers to the longest transverse diameter that coincides with the symmetry axis of the horizontal section and the second longest transverse diameter that is perpendicular to it; the "small transverse diameter" of a quartz crucible refers to the shortest transverse diameter in the horizontal section of the quartz crucible. It can be understood that a quartz crucible with two equal transverse diameters is used to pull silicon single crystals with a regular cross section; a quartz crucible with a longest transverse diameter and a second longest transverse diameter is used to pull silicon single crystals with an elongated cross section.

[0015] 7) The first "boundary layer" and the first "outer boundary layer" of liquid silicon at the liquid silicon / crucible interface: The first "boundary layer" of liquid silicon is a thin layer of liquid silicon fluid that is close to the inner surface of the top of the crucible protrusion and has a non-negligible viscosity. For laminar flow, the thickness of the first boundary layer is It is a function of the crucible wall position (such as liquid level height z), and has the following relationship:

[0016] in: : Viscosity coefficient of liquid silicon; (z): characteristic length, the length of the laminar flow of thermal convection liquid silicon against the crucible wall; : Liquid silicon density; (z): thermal convection flow rate of liquid silicon in the outer layer of the first boundary of liquid silicon at the blade; , (z) can be obtained by simulating the flow field in liquid silicon using simulation software such as CG-sim and FEMAG, or by experiments. The velocity of the corresponding area in the liquid silicon fluid is given here as an example. Since the velocity in the existing liquid silicon fluid can be obtained by simulation, theoretical calculation and other methods, the method of obtaining it is not specifically limited here.

[0017] The first "outer boundary layer" of liquid silicon refers to a thin layer adjacent to the first "boundary layer" where the thermal convection rate of liquid silicon can reach more than 90% of the nearby maximum flow rate.

[0018] 8) The second "boundary layer" and the second "outer boundary layer" of liquid silicon at the liquid silicon / crucible interface: Similar to the first "boundary layer" of liquid silicon, the second "boundary layer" of liquid silicon is a thin layer of liquid silicon fluid that has a non-negligible viscous force against the bottom surface of the inner cavity of the crucible. In this application document, the thickness of the second boundary layer is is a function of the crucible wall position (e.g., distance r from the axis). For laminar flow, the following relationship holds:

[0019] in: : Viscosity coefficient of liquid silicon; (r): characteristic length, the length of the laminar flow of convective liquid silicon against the crucible wall; : Liquid silicon density; (r): the convection velocity of the liquid silicon in the outer layer of the second boundary of the liquid silicon at the rotor of interest (e.g., at any point P on the rotor contour line); (r) It can be obtained by simulating the flow field in liquid silicon through simulation software such as CG-sim and FEIMAG, or by experiments. Here, the velocity of the corresponding area in the liquid silicon fluid is given as an example. Since the velocity in the existing liquid silicon fluid can be obtained by simulation, theoretical calculation and other methods, the method of obtaining it is not specifically limited here.

[0020] Similarly, the second “outer boundary layer” refers to a thin layer adjacent to the second “boundary layer” where the thermal convection rate of liquid silicon can reach more than 90% of the nearby maximum flow rate.

[0021] The above boundary layer can also be defined by the concentration of impurity oxygen contained in the layer. Assume that there is an excess oxygen impurity concentration in the boundary layer that exceeds the average oxygen ion impurity concentration level of the liquid silicon inside the crucible. , the excess oxygen impurity concentration near the crucible wall is , starting from the crucible wall, to the excess oxygen impurity concentration in the liquid silicon Down to 0.37 It turns out that the boundary layer thicknesses of the two definitions are comparable.

[0022] 9) The third "boundary layer" and the third "outer boundary layer": The third "boundary layer" is the liquid silicon / silicon single crystal boundary layer, which refers to a thin layer of liquid silicon adjacent to the silicon single crystal. The most important feature of this thin layer is that there is a difference in the average impurity concentration level of the liquid silicon inside the crucible. , assuming that there is an excess impurity concentration in the third boundary layer that exceeds the average impurity concentration level of liquid silicon inside the crucible , for impurities with a silicon solid-liquid segregation coefficient less than 1, such as phosphorus, arsenic, and antimony, Is a positive value. For impurities with a silicon solid-liquid segregation coefficient greater than 1, such as oxygen, is a negative value. The excess impurity concentration close to the crystalline silicon crystal interface is .

[0023] The definition is from the solid-liquid interface of crystalline silicon to the excess impurity concentration in liquid silicon. Down to 0.37 The last thin layer is the third boundary layer.

[0024] Thickness of the third boundary layer It can also be calculated by the following formula:

[0025] in: : Correlation coefficient, for example, for the impurity antimony, You can choose 1.61; D: diffusion coefficient of the impurity of interest in liquid silicon; : kinematic viscosity coefficient of liquid silicon; : The relative movement rate of liquid silicon in the third "boundary outer layer".

[0026] , It can be obtained by simulating the flow field in liquid silicon through simulation software such as CG-sim and FEIMAG, or by experiments. Here, the velocity of the corresponding area in the liquid silicon fluid is given as an example. Since the velocity in the existing liquid silicon fluid can be obtained by simulation, theoretical calculation and other methods, the method of obtaining it is not specifically limited here.

[0027] The third "outer boundary layer" refers to a liquid silicon layer adjacent to the third boundary layer, and the third outer boundary layer has the highest liquid silicon flow rate in the vicinity.

[0028] 10) Front angle β (of ridge): Take the cross section of the ridge perpendicular to the length direction of the ridge, and the angle between the line of the surface that pushes the liquid silicon to move and the line segment between the two end points of its bottom surface is defined as the front angle β (of the ridge).

[0029] 11) Back angle γ of (convex ridge): Take the cross section of the ridge perpendicular to the length direction of the ridge, and the angle between the line that deviates from the direction of movement of the ridge and the line segment between the two end points of its bottom surface is defined as the back angle γ (of the ridge).

[0030] 2. Purpose and content of the invention: The prior art for pulling silicon single crystals with rectangular cross-sections requires that the orientation of the silicon single crystal relative to the crucible be fixed. This, firstly, limits the freedom of crystal rotation. Secondly, the rotation of the crucible will cause distortion of the heat distribution and flow field distribution in the crucible. The asymmetric heat field and flow field distribution will destroy the growth environment of the rectangular cross-section silicon single crystal. Therefore, the freedom of crucible rotation is also limited.

[0031] However, it is well known that in the existing magnetic field-free crystal pulling technology, crucible rotation and crystal rotation are essential for balancing the thermal buoyancy convection of liquid silicon. Balancing the thermal buoyancy of liquid silicon is an indispensable means to reduce and control the impurity oxygen content in silicon single crystals.

[0032] The purpose of the present invention is to achieve at least one of the following objectives: 1) Introducing a quartz crucible and crucible rotation process technology that can suppress the thermal convection of liquid silicon, and introducing a synchronous and unidirectional crystal rotation that can offset the crucible rotation, solving the problem of the lack of reverse crystal rotation and insufficient suppression of the thermal convection of liquid silicon in the prior art when pulling a silicon single crystal with a rectangular cross section, achieving an equal or better balance effect on the thermal convection intensity of liquid silicon compared with the prior art, and reducing oxygen impurities in the silicon single crystal; 2) Furthermore, the oxygen content in the crystal can be controlled during the crystal pulling process; 3) Reduce the interference with the microenvironment of impurity distribution at the interface of silicon single crystal, thereby increasing the effective solid-liquid segregation coefficient of n-type impurities and reducing the effective solid-liquid segregation coefficient of impurity oxygen.

[0033] The beneficial effects of the present invention are: First, with the quartz crucible of the present invention and the process method provided, a silicon single crystal ingot with a rectangular cross-section and controllable oxygen content and distribution can be pulled; Second, reduce the vertical concentration gradient of n-type impurities in silicon single crystal ingots, pull longer and heavier silicon single crystals, and improve production efficiency; Third, improve the flatness of the crystal plane of the silicon single crystal rod and reduce the mechanical stress and impurity concentration distribution stress of the silicon single crystal ingot.

[0034] The content of the present invention includes: In a first aspect, the present invention provides a quartz crucible with a non-rectangular or non-circular cross-section for pulling rectangular silicon single crystals, wherein the inner cavity pattern in the xy plane section has four protrusions protruding outward, and the inner surface of the quartz crucible within a range of 2×42° symmetrical between the top of the protrusion and the line connecting the symmetry center of the pattern is arranged around the z-axis with 4u or 2n+2m blades protruding relative to the inner surface of the quartz crucible, wherein u, n, and m are integers greater than or equal to 1, and the inner surface of the quartz crucible at the top of one of the four protrusions protruding outward is arranged with u, n, or m blades, and the angle between the blades and the xy plane, i.e., the inhibition angle , The rotation direction of the raised blade is opposite to that of the quartz crucible.

[0035] The principle of oxygen reduction and control is that the main source of oxygen impurities in liquid silicon is the wall of the quartz crucible close to the heater, especially the high-temperature area of ​​the crucible closest to the heater. The thermal convection buoyancy of liquid silicon caused by high temperature is several to dozens of times greater than other forces (such as inertial centrifugal force generated by crucible rotation and crystal rotation, surface tension of liquid silicon, shear force of argon blowing, and advection force of liquid silicon caused by crystallization). Under the action of buoyancy, the high-speed rising liquid silicon flow corrodes the crucible wall, bringing the oxygen in it into the liquid silicon and into the silicon single crystal ingot.

[0036] The rising liquid silicon flow is subject to a The blades are blocked, and their speed can be decomposed into two components, one is longitudinally upward and the other is along the tangent of the crucible wall, which is opposite to the rotation direction of the blades. At this time, if the crucible is started in a direction opposite to the rotation direction of the blades, the blades will produce a pressing effect on the liquid silicon, and its pressing speed component offsets the two speed components of the liquid silicon, so as to achieve the purpose of suppressing the liquid silicon from rising along the pot wall under the action of buoyancy and keeping the liquid silicon stable, which is beneficial for the crucible rotation to balance the two speed components longitudinally upward and along the tangent of the crucible wall, which are opposite to the rotation direction of the blades, generated by the thermal buoyancy convection of the liquid silicon near the pot wall; therefore, when pulling a rectangular crystal rod, the speed of the liquid silicon flow along the circumference of the crucible wall caused by the low-speed rotation of the crucible rotation is approximately zero relative to the crucible wall, which is close to the state when the crucible is not rotating, and is more conducive to the reduction of the oxygen content of the crucible caused by the crucible rotation.

[0037] The buoyant rising liquid silicon flow is divided into a "boundary layer" and an "outer boundary layer". When a rectangular silicon single crystal is pulled, the thickness of the boundary layer liquid silicon is in the order of (3-5) mm, the rising speed of the boundary layer liquid silicon is in the order of (1-5) mm / s, and the rising speed of the outer boundary layer liquid silicon is in the order of (2-7) cm / s. In order to improve the suppression effect, the height of the blade of the present invention is greater than the thickness of the boundary layer. A higher blade height can achieve a stronger suppression effect, but the quartz surface area exposed in the liquid silicon will also increase. The existing technology can help obtain the optimal blade height; the suppression angle of the blade Related to the crucible rotation rate, adjust , the minimum crucible rotation rate and satisfactory pressing effect can be obtained. In the process of silicon single crystal pulling, the purpose of oxygen control can be achieved by adjusting the crucible rotation angle speed.

[0038] On the one hand, by suppressing the thermal convection velocity, the thickness of the boundary layer can be increased and the oxygen impurity distribution gradient of the boundary layer can be reduced; on the other hand, by suppressing the thermal convection velocity near the original boundary outer layer, for example, reducing it to below 10 mm / s, the effective diffusion coefficient of oxygen impurities can be reduced. The reduction of the oxygen impurity distribution gradient and diffusion coefficient reduces the amount of oxygen impurities entering the liquid silicon per unit time.

[0039] The reason why 4 or 2n+2m blades are arranged is that the crucible has a C4 or C2 rotational symmetry relationship, and each pair of opposite "protrusions" has a C2 rotationally symmetric blade arrangement. Furthermore, there is a C4 rotationally symmetric blade arrangement. Generally, a quartz crucible with a C4 rotational symmetry relationship is used to pull silicon single crystal rods with square cross-sections, and a quartz crucible with only a C2 rotational symmetry relationship is used to pull silicon single crystal ingots with rectangular cross-sections.

[0040] Preferably, the suppression angle , (Optional are 46°, 49°, 52°, 55°, 58°, 61°, 64°, 67°, 70°, 75°, 80°, etc.). A larger suppression angle can reduce the angular velocity ω of the crucible rotation, which is beneficial to the stability of the thermal field and flow field in the crucible.

[0041] Furthermore, the quartz crucible has two mutually perpendicular symmetry axes in the horizontal cross section, the most protruding points of each protrusion are on the same circumscribed class circle, the ratio of the maximum transverse diameter to the minimum transverse diameter of the circumscribed class circle is between 1 and 1.1, and the ratio of the widths of two adjacent protrusions is between 1 and 1.4. The high rotational symmetry of the outer edge of the crucible facilitates the rotation of the crucible and the symmetrical design of the thermal field, and the appropriate ratio of the widths of two adjacent protrusions is conducive to drawing a silicon single crystal ingot with a rectangular cross section.

[0042] Furthermore, the height of the blade is , .

[0043] Preferably, the height of the blade is , (Optional: 12mm, 15mm, 18mm, 20mm, 22mm, 25mm, 27mm, 30mm, 33mm, 35mm, 39mm, 41mm, 43mm, 45mm, 47mm, 50mm, etc.).

[0044] Furthermore, in the area between two adjacent protrusions, no protruding blades are provided, and the blade clusters provided by the four protrusions are isolated from each other and are not connected. This design is because the connection of the four protrusions does not need to be heated, and the heat convection intensity is low.

[0045] Preferably, the tops of the four outwardly protruding portions are arc-shaped, and the ratio of the small transverse diameter to the large transverse diameter of the quartz crucible is 0.5-0.9 (optionally 0.5, 0.52, 0.56, 0.58, 0.62, 0.65, 0.67, 0.71, 0.75, 0.79, 0.82, 0.84, 0.87, 0.9, etc.). The requirement for the ratio of the large and small transverse diameters is conducive to forming a crucible environment for pulling a rectangular cross-section silicon single crystal ingot at a lower cost.

[0046] Furthermore, the inhibition angle of the blade The angular velocity of the quartz crucible , the distance between the blade and the z-axis , the liquid silicon heat convection rise rate of the first boundary outer layer of the liquid silicon when there is no blade at the blade on the inner surface of the quartz crucible The following relationship exists:

[0047] in: :coefficient, ; : angular velocity of the quartz crucible (in radians); : The distance between the blade and the z-axis; : The thermal convection rise rate of liquid silicon in the outer layer of the first boundary of liquid silicon at the blade on the inner surface of the crucible when there is no blade.

[0048] It can be understood that the tops of the four outwardly protruding portions are arc-shaped, and the distance between the blade and the z-axis is Different, the inhibition angle of the blade at different positions of the protrusion tip They can be the same or different. When the inhibition angle of the blades at different positions of the top of the protrusion The different positions are beneficial for the blades to have different effects of inhibiting the liquid silicon flow, so as to improve the overall inhibition effect.

[0049] Furthermore, the cross section of the blade is a sawtooth asymmetric cross section, and the front angle of the blade cross section is , 75°≤ ≤95° (optional: 75°, 77°, 82°, 85°, 87°, 89°, 91°, 93°, 95°, etc.); the back angle of the blade section is , 5°≤ <75° (optional: 5°, 9°, 11°, 24°, 33°, 43°, 55°, 62°, 68°, 71°, 74°, etc.); In a more preferred solution, the cross-section of the blade is a sawtooth-shaped asymmetric cross-section, with a steeper front angle of the "sawtooth" blade and a gentler rear angle of the blade. The beneficial effect of such an arrangement is that it is beneficial to form a more gentle laminar vortex between the blades, preventing the formation of violent turbulent vortexes that cause excessive impact and corrosion on the wall of the quartz crucible; it is beneficial to minimize the contact area between liquid silicon and the crucible, and reduce the path for impure oxygen to enter the liquid silicon.

[0050] Furthermore, the distance between two adjacent blades is s. (optional: 21mm, 26mm, 31mm, 36mm, 41mm, 46mm, 51mm, 56mm, 61mm, 66mm, 71mm, 76mm, 81mm, 86mm, 91mm, 96mm, 100mm, etc.); Alternatively, the distance between two adjacent blades is s, (Optional: 110mm, 120mm, 130mm, 140mm, 150mm, 160mm, 170mm, 180mm, 190mm, 200mm, etc.).

[0051] The configuration of the blade shape and spacing is based on the considerations of suppressing the effectiveness of buoyancy heat convection, minimizing the exposed area of ​​quartz, and reducing turbulent eddies.

[0052] In a second aspect, the present invention provides a second quartz crucible with a non-rectangular or non-circular cross section for pulling a rectangular silicon single crystal.

[0053] The inner cavity figure of the quartz crucible in the xy plane section has four protrusions protruding outwards. On the bottom surface of the inner cavity of the quartz crucible, one or more rotors protruding relative to the bottom surface of the inner cavity of the quartz crucible are arranged to rotate around the z axis. The rotors are arranged to rotate around the z axis. The rotation direction of the rotors is opposite to that of the quartz crucible. A point P on the contour line of the rotors has an incision angle , cutting angle The range is 2°< <80° (optional: 3°, 5°, 9°, 11°, 24°, 33°, 43°, 55°, 62°, 68°, 71°, 73°, 75°, 77°, 79°, etc.); Furthermore, the height of the rotor is , .

[0054] Preferably, the height of the rotor is , (Optional: 11mm, 13mm, 19mm, 23mm, 27mm, 32mm, 36mm, 39mm, 42mm, 45mm, 47mm, 49mm, 50mm, etc.).

[0055] The rotor of the second type of quartz crucible with a non-rectangular or non-circular cross-section for pulling a rectangular silicon single crystal cooperates with the rotation of the quartz crucible (a crucible with a right-handed rotor, the crucible rotates to the left; a crucible with a left-handed rotor, the crucible rotates to the right), and its cutting angle is A centripetal compressed liquid silicon flow is generated at the bottom of the crucible in the opposite direction to the thermal convection of liquid silicon, balancing and restraining the thermal convection generated by the buoyancy of liquid silicon, thereby reducing the intensity of the liquid silicon scouring the quartz crucible wall and reducing the total amount of impurity oxygen entering the liquid silicon from the quartz crucible wall.

[0056] With the help of the centripetal vortex effect of the rotor at the bottom of the crucible, a centripetal and upward liquid silicon vortex is generated from the bottom of the crucible. The vortex path is similar to the trumpet-shaped liquid flow generated upward by the vortex nozzle. Its influence on the flow direction of liquid silicon is similar to crystal rotation, but it has more beneficial advantages than crystal rotation. First, the power of the technology of the present invention is at the bottom of the liquid silicon, and the power of crystal rotation is on the surface of the liquid silicon. The present invention generates a centripetal and upward liquid silicon vortex from the bottom of the liquid silicon. Its rising path is in an upward trumpet shape, which does not directly impact the liquid silicon near the crystallization interface, and the liquid silicon with a lower temperature at the bottom of the crucible flows to the vicinity of the crystallization interface. Therefore, the crystallization interface can be reduced. The purpose of controlling the temperature gradient of liquid silicon near the surface and the depth of the pits on the crystallization plane can be achieved. Compared with the existing technology, the degree of reduction in pulling speed can be slowed down. The disturbance to the central part of the crystallization interface can be reduced to maintain a higher impurity concentration near the crystallization interface, increase the effective segregation coefficient of n-type impurities, and reduce the effective segregation coefficient of impurity oxygen. Increasing the effective segregation coefficient of n-type impurities is beneficial to the entry of n-type impurities into silicon single crystals, reducing the longitudinal concentration gradient of n-type impurities in silicon single crystal rods, making the doping uniform and pulling longer silicon single crystal rods; reducing the effective segregation coefficient of impurity oxygen is beneficial to reducing the entry of impurity oxygen into silicon single crystals and reducing the oxygen impurity content in silicon single crystal rods.

[0057] Rotor entry angle The angle setting takes into account the characteristics of different types of spiral wires to improve the pressing efficiency of liquid silicon.

[0058] The main beneficial effect of the rotor cross section being a serrated asymmetric cross section is the same as that of the blade; the rotor height Different settings are beneficial to adjusting the thermal convection of the pressed liquid silicon and the centripetal and upward liquid silicon eddy current intensity.

[0059] Preferably, the projection curve of the rotor on the bottom surface of the inner cavity of the quartz crucible in the xy plane is a spiral line, and the cutting angle Distance from z axis The range of change is 2°< <80°, the angle range depends on the type and number of spirals.

[0060] Furthermore, the cut-in angle of the rotor contour point P is , the liquid silicon flow rate of the second boundary outer layer , and the angular velocity of the quartz crucible (in radians), the distance between the rotor contour point P and the z-axis The following relationship exists in terms of values:

[0061] in: :coefficient, ; : The flow rate of liquid silicon in the outer layer of the second boundary of pure thermal convection at the rotor surface of the bottom of the crucible cavity without the rotor; : Cut-in angle; : The distance between point P on the rotor contour and the z-axis.

[0062] With the help of this relationship, we can: 1. According to Follow The changing relationship between design and The line type of the rotor contour line at an angle makes the flow of liquid silicon flow smoother and closer to laminar flow, so as to ensure the stability of the flow field in the liquid silicon and the adaptability of the flow field for drawing a silicon single crystal ingot with a rectangular cross section; 2. Used to design the crucible rotation speed during crystal pulling As the depth of liquid silicon in the crucible decreases, The control curve changes as it decreases.

[0063] In a third aspect, the present invention provides a third non-rectangular or circular cross-section quartz crucible for pulling rectangular silicon single crystals, wherein the inner cavity pattern of the third non-rectangular or circular cross-section quartz crucible in the xy plane section has four protruding portions protruding outward, and on the inner cavity surface of the quartz crucible at the top of the four protruding portions protruding outward, 4u or 2n+2m blades protruding relative to the inner surface of the quartz crucible are arranged around the z axis, as in the first non-rectangular or circular cross-section quartz crucible for pulling rectangular silicon single crystals; and, on the inner cavity bottom surface of the quartz crucible, one or more rotors protruding relative to the inner cavity bottom surface of the quartz crucible are arranged around the z axis, as in the second non-rectangular or circular cross-section quartz crucible for pulling rectangular silicon single crystals, and the blades and the rotors have the same rotation direction. It can be understood that the third quartz crucible for pulling straight silicon single crystals has the effects of the first and second quartz crucibles for pulling straight silicon single crystals, and can have a better effect of synergy.

[0064] In a fourth aspect, the present invention provides a method for growing a rectangular silicon single crystal ingot by a Czochralski method, using the quartz crucible provided in the first aspect. During the crystal growth process, the silicon single crystal ingot and the quartz crucible rotate synchronously in the same direction with the z-axis as the axis. The quartz crucible with right-handed blades rotates in a left-handed direction; the quartz crucible with left-handed blades rotates in a right-handed direction. The outer edge linear velocity of the quartz crucible is (10~350) mm / sec. The outer edge linear velocity of the quartz crucible is (10~350) mm / sec. Pressable Sure.

[0065] In a fifth aspect, the present invention provides another method for growing a rectangular silicon single crystal ingot by a Czochralski method, using the quartz crucible provided in the second aspect. During the crystal growth process, the quartz crucible and the rectangular silicon single crystal ingot rotate synchronously in the same direction with the z-axis as the axis. The quartz crucible with a right-handed rotor rotates in a left-handed direction; the quartz crucible with a left-handed rotor rotates in a right-handed direction. The outer edge linear velocity of the quartz crucible is (10~420) mm / sec. The outer edge linear velocity of the quartz crucible can be calculated according to the formula: Sure.

[0066] In a sixth aspect, the present invention provides another method for growing a rectangular silicon single crystal ingot by a Czochralski method, using the quartz crucible provided in the third aspect. During the crystal growth process, the quartz crucible and the silicon single crystal ingot rotate synchronously in the same direction with the z-axis as the axis. The quartz crucible with a right-handed rotor rotates in a left-handed direction; the quartz crucible with a left-handed rotor rotates in a right-handed direction; the outer edge linear velocity of the rotating quartz crucible is (10~350) mm / second.

[0067] The present invention achieves the purposes of suppressing heat convection, reducing oxygen and controlling oxygen by using the "blades" locally spaced at intervals on the protruding portion of the crucible and / or the "rotors" arranged at the bottom of the crucible, in coordination with the low-speed crystal rotation in the same direction and synchronously with the crucible rotation, while retaining the beneficial effects of stopping the crystal rotation of the pulled rectangular cross-section single crystal, that is, maintaining the stability of the microenvironment at the front edge of the silicon single crystal crystallization interface and increasing the temperature gradient on the liquid silicon side of the crystallization interface, thereby achieving the purposes of reducing oxygen, controlling oxygen, controlling the content of n-type impurities and controlling the flatness of the crystallization plane. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0069] Figure 1 It is a schematic longitudinal section diagram of the quartz crucible of Example 1 of the present invention; after the spiral rotor 12 is added to the bottom, it is also a schematic longitudinal section diagram of the quartz crucible of Example 2.

[0070] Figure 2 It is a partial schematic diagram of the BB direction of the embodiment 1 of the present invention.

[0071] Figure 3 This is a top view schematic diagram of a quartz crucible according to Example 2 of the present invention. Except for the spiral rotor 12 at the bottom, it is also a top view schematic diagram of the quartz crucible according to Example 1.

[0072] Figure 4 It is a schematic diagram of a partial AA view of Example 2 of the present invention.

[0073] Description of reference numerals: 1-quartz crucible; 11-blade; β1-blade front angle; γ1-blade rear angle; h1-blade height; α1-suppression angle; 12-rotor; α2-cut-in angle; β2-rotor front angle; γ2-rotor rear angle; h2-rotor height; 2-heater; 3-z-axis; D-crucible major transverse diameter; D1-first crucible major transverse diameter; D2-second crucible major transverse diameter; d-crucible minor transverse diameter; 6-silicon single crystal ingot. DETAILED DESCRIPTION

[0074] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0075] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0076] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0077] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0078] Example 1 like Figure 1 , Figure 2 Shown and referenced Figure 3 The embodiment of the present invention provides a quartz crucible 1 for growing a square cross-section silicon single crystal by a Czochralski method, wherein the inner cavity pattern of the crucible in the xy plane section has four protrusions protruding outward, presenting a C4 rotational symmetry. The protrusions are arched, and the inner cavity surface of the quartz crucible 1 within a range of 2×35° symmetrical between the tops of the four protrusions and the line connecting the symmetry center of the pattern is provided with 4u blades 11 protruding relative to the inner surface of the quartz crucible, u=7, and the protruding blades 11 are not provided in the area between two adjacent protrusions, and the blade clusters provided on the four protrusions are isolated from each other and not connected.

[0079] The rotation direction of the blade 11 is opposite to that of the quartz crucible 1, and the blade 11 has a blade suppression angle α1, α1 75°; the blade height h1 of the blade 11 is greater than the first boundary layer thickness δ1 of the liquid silicon on the inner cavity surface near the blade 11 of the crucible 1. In this embodiment, δ1 is , blade height h1, h1=20mm.

[0080] The quartz crucible 1 has a large transverse diameter D (including a first large transverse diameter D1 and a second large transverse diameter D2), D1=D2=D=820 mm, a small transverse diameter d, d=574 mm, d / D=0.7, and a height of 650 mm, wherein the columnar part is 450 mm high, and the rotation direction of the blade 11 is right-handed, which is opposite to that of the quartz crucible 1 .

[0081] In this embodiment, the cross section of the blade 11 is a sawtooth asymmetric cross section, the blade front angle β1 = 90°, the blade rear angle γ1 = 30°; the distance between two adjacent blades is about 60 mm.

[0082] In this embodiment, during the growth of silicon single crystal, the quartz crucible 1 rotates with the crucible rotation z-axis 3 as the axis, and the quartz crucible 1 with right-handed blades 11 rotates in the left-hand direction. The pulled silicon single crystal ingot 6 rotates in the same direction and synchronously with the quartz crucible 1. The initial rotation speed of the quartz crucible 1 is about 1.36 rpm, and then the rotation speed decreases linearly. When the liquid silicon surface drops to the tail end of the blade 11, the rotation speed of the quartz crucible 1 is about 0.23 rpm.

[0083] The quartz crucible 1 of the same shape and size in the prior art is used to pull a square cross-section silicon single crystal ingot, and has strict requirements on the distribution of liquid silicon temperature and flow field. The crucible rotation and crystal rotation are both "0", because the liquid silicon inertial centrifugal force generated by the crystal rotation is lacking to inhibit thermal convection. The first boundary outer layer of the liquid silicon thermal convection on the surface of the inner cavity of the quartz crucible at the top of the four outward protruding protrusions forms a typical natural convection vortex in the meridian plane, and its flow rate reaches 60mm / s. On the one hand, the natural convection vortex strongly scours the crucible surface, causing a large amount of impurity oxygen to enter the liquid silicon and effectively bring it to the crystal growth surface; on the other hand, a large amount of high-temperature liquid silicon flows directly to the crystal surface, causing the temperature of the central part of the crystal surface to rise, resulting in a serious concave surface of the crystal surface, which reduces the growth rate.

[0084] In this embodiment, with the help of appropriately arranged blades 11 and the setting of the crucible rotation, on the one hand, the lateral flow of liquid silicon caused by the crucible rotation can be balanced and the natural convection vortex at the hot wall of the crucible can be suppressed, so that the flow rate is reduced from 60 mm / s to 10 mm / s. According to empirical data, the beneficial effect is to directly reduce the oxygen impurity content in the crystal by 35%.

[0085] Example 2 like Figure 3 , Figure 4 , and refer to Figure 1 The embodiment of the present invention provides a quartz crucible 1 for growing a silicon single crystal with a cross-sectional aspect ratio of 1.3 by a Czochralski method. The inner cavity pattern of the crucible in the xy plane section has four protrusions protruding outward, which are C2 rotationally symmetrical.

[0086] The protrusion is arched, and within the range of 2×30° between the top of the two narrower protrusions and the line connecting the symmetry center of the pattern, 2n blades protruding relative to the inner surface of the quartz crucible 1 are arranged in rotation around the z axis 3; within the range of 2×40° between the top of the two wider protrusions and the line connecting the symmetry center of the pattern, 2m blades protruding relative to the inner surface of the quartz crucible 1 are arranged in rotation around the z axis 3. Where n=6, m=7.

[0087] In the area between two adjacent protrusions, no blades 11 are provided, and the blade clusters provided on the four protrusions are isolated from each other and are not connected.

[0088] The quartz crucible 1 has two mutually perpendicular symmetry axes in the xy plane section, the most protruding apex of each protrusion is on the same circumscribed circle, and the ratio of the widths of two adjacent protrusions is narrow:wide=1:1.3.

[0089] In the area between two adjacent protrusions, no protruding blades 11 are provided, and the blade clusters provided on the four protrusions are isolated from each other and are not connected.

[0090] The blade 11 has a suppression angle α1, α1=60°; the blade height h1 of the blade 11 is greater than the first boundary layer thickness δ1 of liquid silicon on the inner cavity surface near the blade 11 of the quartz crucible 1, in this embodiment, δ1 is 2mm-5mm, and the blade height h1, h1=16mm.

[0091] In this embodiment, the cross section of the blade 11 is a sawtooth asymmetric cross section, the blade front angle β1 = 90°, the blade rear angle γ1 = 30°; the distance between two adjacent blades is about 70 mm.

[0092] In this embodiment, during the growth of silicon single crystal, the quartz crucible 1 rotates with the crucible rotation z-axis 3 as the axis, and the quartz crucible 1 with right-handed blades 11 rotates in the left-hand direction, and the pulled rectangular silicon single crystal ingot 6 rotates in the same direction and synchronously with the quartz crucible 1. The initial crucible rotation speed during pulling is 1.5 rpm, and then the crucible rotation speed decreases linearly, and when the liquid silicon surface drops to the tail end of the blade 11, the rotation speed of the quartz crucible 1 is 0.25 rpm.

[0093] The quartz crucible 1 of this embodiment has a large cross diameter D, D1=D2=D=820 mm, a small cross diameter d, d=574, d / D=0.8, and a height of 650 mm, wherein the column part is 450 mm high. The rotation direction of the blade 11 is right-handed, which is opposite to that of the quartz crucible 1 .

[0094] In this embodiment, on the bottom surface of the inner cavity of the quartz crucible 1, four rotors 12 protruding relative to the inner cavity surface of the quartz crucible 1 are evenly distributed with center symmetry. The projection of the rotor 12 on the xy plane is a part of an involute-like curve whose center is on the z-axis 3 of the crucible. The four rotors 12 are arranged in C4 rotational symmetry around the z-axis 3 of the crucible, and the cutting angle α2 of the rotor changes continuously from 4° to 76° from the outside to the inside.

[0095] In this embodiment, the protruding rotor height h2 of the rotor 12 is 20 mm; the cross section of the rotor 12 is a sawtooth asymmetric cross section, the rotor front angle β2 is 90°, and the rotor rear angle γ2 is 30°; the rotation direction of the rotor 12 is right-handed.

[0096] In this embodiment, during the growth of silicon single crystal, the quartz crucible 1 rotates around the crucible z-axis 3 , and the quartz crucible 1 having right-handed rotors 12 rotates in a left-handed direction.

[0097] In this embodiment, during the growth of the silicon single crystal ingot 6, the rotation of the quartz crucible 1 is coordinated with the rotation of the rotor 12 at the bottom of the quartz crucible 1. On the one hand, the rotor 12 will generate a centripetal forced liquid silicon flow pressure near the bottom of the quartz crucible 1. The forced liquid silicon flow pressure will restrain the thermal convection of the liquid silicon rising along the inner wall of the quartz crucible 1, reduce the intensity of the liquid silicon scouring the inner wall of the crucible 1, and reduce the impurity oxygen entering the liquid silicon; on the other hand, the forced liquid silicon flow pressure and the vortex formed by it have the effect of pumping the lower temperature liquid silicon at the bottom of the quartz crucible 1 to the center of the crystallization interface of the silicon single crystal ingot 6, which can improve the flatness of the crystallization plane of the silicon single crystal ingot 6, and has the beneficial effects of reducing the internal stress of the crystal and improving the uniformity of the impurity distribution in the xy cross-section plane.

[0098] Similar to Example 1, when the quartz crucible 1 of the same shape and size in the prior art is used to pull a rectangular cross-section silicon single crystal ingot 6, there are strict requirements on the liquid silicon temperature and the velocity vector distribution of the flow field. The rotating rectangular cross-section silicon single crystal ingot 6 will cause the distribution of the surrounding heat field to show periodic changes, which is not conducive to the growth of the rectangular cross-section silicon single crystal ingot 6. Therefore, its crucible rotation and crystal rotation are both "0", due to the lack of the liquid silicon inertial centrifugal force generated by the crystal rotation to inhibit thermal convection. The first boundary outer layer of the liquid silicon thermal convection of the quartz crucible inner cavity surface at the top of the four outward protruding protrusions forms a typical natural convection vortex in the meridian plane, and its flow rate reaches 60mm / s. On the one hand, the natural convection vortex strongly scours the crucible surface, causing a large amount of impurity oxygen to enter the liquid silicon and effectively bring it to the crystal growth surface; on the other hand, a large amount of high-temperature liquid silicon flows directly to the crystal surface, causing the temperature of the central part of the crystal surface to rise, causing the crystal surface to be severely concave, reducing the growth rate.

[0099] This embodiment is similar to the embodiment 1. With the help of the blades 11 and the low-speed crucible rotation, the lateral flow of liquid silicon caused by the crucible rotation can be balanced and the natural convection vortex at the hot wall of the crucible can be suppressed, so that the flow rate is reduced to 10 mm / s. According to empirical data, its beneficial effect is to directly reduce the oxygen impurity content in the crystal by 35%; on the other hand, it prevents the high-temperature liquid silicon flow from directly rushing to the crystal surface, reducing the center temperature of the crystal surface by 1°C. Its beneficial effects are: 1. Change the effective segregation coefficient of impurities to make it closer to 1. For n-type impurities, the effective segregation coefficient can be increased to make the doping more uniform and the concentration gradient lower; for impurity oxygen, the effective segregation coefficient can be reduced, thereby reducing the oxygen impurity content in the crystal.

[0100] 2. According to the formula:

[0101] Where: n: the vector of the silicon single crystal solidification front perpendicular to the solid-liquid interface (positive downward); : Growth rate of silicon single crystal (along the direction of vector n); ρ s : Density of silicon single crystal; L: latent heat of crystallization of silicon; : Thermal conductivity of silicon crystal; : Thermal conductivity of liquid silicon; : Temperature gradient along the vector n direction on the silicon crystal side of the crystallization interface; : Temperature gradient along the vector n direction on the liquid silicon side of the crystallization interface.

[0102] Under the same crystal internal stress, the reduction of the second term in the above formula is conducive to maintaining a higher silicon crystal growth rate .

[0103] Furthermore, when the liquid level of liquid silicon in the quartz crucible is higher, the pressing effect of the blades on the side of the crucible is more obvious, and when the liquid level of liquid silicon in the quartz crucible is lower, the pulling effect of the rotor at the bottom of the crucible is more obvious. The two complement each other, which is more conducive to regulating and controlling the entire crystal pulling process and improving product quality.

[0104] In summary, compared with the prior art technical solution of controlling the oxygen content in a silicon single crystal ingot by applying an external magnetic field, the technical solution provided by the present invention has significant cost advantages and cost reduction potential, and is of great significance to the development of the industry.

[0105] The above embodiments are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A quartz crucible with a non-rectangular or non-circular cross section for pulling rectangular silicon single crystals, wherein the inner cavity pattern in the xy plane cross section has four protrusions protruding outward, characterized in that: On the inner surface of the quartz crucible within a range of no more than 2×42°, which is symmetrical between the top of the protrusion and the line connecting the symmetry center of the pattern, 4u or 2n+2m blades are arranged rotating around the z-axis, which are protruding relative to the inner surface of the quartz crucible, wherein u, n, and m are integers greater than or equal to 1, and the inner surface of the quartz crucible at the top of one of the four protrusions protruding outward is arranged with u, n, or m blades, and the angle between the blade and the xy plane, i.e., the suppression angle , The rotation direction of the raised blade is opposite to that of the quartz crucible.

2. The quartz crucible according to claim 1, characterized in that: The inhibition angle , .

3. The quartz crucible according to claim 1, characterized in that: The quartz crucible has two mutually perpendicular symmetry axes in the xy plane section, the most protruding point of each protrusion is located on the same circumscribed circle, the ratio of the maximum transverse diameter to the minimum transverse diameter of the circumscribed circle is between 1 and 1.1, and the ratio of the widths of two adjacent protrusions is between 1 and 1.

4.

4. The quartz crucible according to claim 1, characterized in that: The height of the blade is , .

5. The quartz crucible according to claim 1, characterized in that: The height of the blade is , .

6. The quartz crucible according to claim 1, characterized in that: In the area between two adjacent protrusions, no protruding blades are provided, and the blade clusters provided by the four protrusions are isolated from each other and are not connected.

7. The quartz crucible according to claim 1, characterized in that: The top ends of the four outwardly protruding portions are arc-shaped, and the ratio of the small transverse diameter to the large transverse diameter of the quartz crucible is 0.5-0.

9.

8. The quartz crucible according to claim 1, characterized in that: The top ends of the four outwardly protruding portions are arc-shaped, and the ratio of the small transverse diameter to the large transverse diameter of the quartz crucible is 0.6-0.

8.

9. The quartz crucible according to claim 1, characterized in that: The inhibition angle of the blade The angular velocity of the quartz crucible , the distance between the blade and the z-axis , the liquid silicon heat convection rise rate of the first boundary outer layer of the liquid silicon when there is no blade at the blade on the inner surface of the quartz crucible The following relationship exists: in: :coefficient; : angular velocity of the quartz crucible, in radians; : The distance between the blade and the z-axis; : The thermal convection rise rate of liquid silicon in the outer layer of the first boundary of liquid silicon when there is no blade at the blade on the inner surface of the quartz crucible.

10. The quartz crucible according to claim 1, characterized in that: The blade located on the inner surface of the protruding portion of the quartz crucible has at least one of the following characteristics: 1) The cross section of the blade is a sawtooth asymmetric cross section, and the front angle of the blade cross section is , 75°≤ ≤95°; the back angle of the blade section is , 5°≤ <75°; 2) The distance between two adjacent blades is s, ; 3) The distance between two adjacent blades is s, .

11. A quartz crucible with a non-rectangular or non-circular cross section for pulling rectangular silicon single crystals, wherein the inner cavity pattern in the xy plane cross section has four protrusions protruding outward, characterized in that: On the bottom surface of the inner cavity of the quartz crucible, one or more rotors are arranged to rotate around the z-axis and are raised relative to the bottom surface of the inner cavity of the quartz crucible. The rotors are arranged to rotate around the z-axis, and the rotation direction of the rotors is opposite to that of the quartz crucible. A point P on the contour line of the rotor has an incision angle , cutting angle The range is 2°< <80°.

12. The quartz crucible according to claim 11, characterized in that: The height of the rotor is , .

13. The quartz crucible according to claim 11, characterized in that: The height of the rotor is , .

14. The quartz crucible according to claim 11, characterized in that: The projection curve of the rotor on the bottom surface of the inner cavity of the quartz crucible in the xy plane is a spiral line, and the cutting angle Distance from z axis The range of change is 2°< <80°.

15. The quartz crucible according to claim 11, characterized in that: The cutting angle of the rotor profile point P , the liquid silicon flow rate of the second boundary outer layer , and the angular velocity of the quartz crucible in radians , the distance between the rotor contour point P and the z-axis The following relationship exists in terms of values: in: :coefficient; : The flow rate of liquid silicon in the outer layer of the second boundary of pure thermal convection at the rotor surface of the bottom of the crucible cavity without the rotor; : Cut-in angle; : The distance between point P on the rotor contour and the z-axis.

16. A quartz crucible with a non-rectangular or circular cross section for pulling rectangular silicon single crystals, wherein the inner cavity pattern in the xy plane cross section has four protrusions protruding outward, characterized in that: On the inner cavity surface of the quartz crucible at the top of the four outwardly protruding protrusions, 4u or 2n+2m blades as described in any one of claims 1 to 10 are arranged to rotate around the z-axis and protrude relative to the inner surface of the quartz crucible; and, on the inner cavity bottom surface of the quartz crucible, one or more rotors as described in any one of claims 11 to 15 are arranged to rotate around the z-axis and protrude relative to the inner cavity bottom surface of the quartz crucible, and the blades and the rotors have the same rotation direction.

17. A method for growing a rectangular silicon single crystal ingot by Czochralski method, characterized in that: Using the quartz crucible described in any one of claims 1 to 10, during the crystal growth process, the rectangular silicon single crystal ingot and the quartz crucible rotate synchronously in the same direction with the z-axis as the axis, the quartz crucible with the right-handed blades rotates in the left-handed direction; the quartz crucible with the left-handed blades rotates in the right-handed direction, and the outer edge linear speed of the quartz crucible is 10~350 / Second.

18. A method for growing a rectangular silicon single crystal ingot by using a Czochralski method, characterized in that: Using the quartz crucible described in any one of claims 11 to 15, during the crystal growth process, the quartz crucible and the rectangular silicon single crystal ingot rotate synchronously in the same direction with the z-axis as the axis. The quartz crucible with the right-handed rotor rotates in a left-handed direction; the quartz crucible with the left-handed rotor rotates in a right-handed direction, and the outer edge linear speed of the quartz crucible is 10~420 / Second.

19. A method for growing a rectangular silicon single crystal ingot by Czochralski method, characterized in that: Using the quartz crucible of claim 11, during the crystal growth process, the quartz crucible and the silicon single crystal ingot rotate synchronously in the same direction with the z-axis as the axis. The quartz crucible with the right-handed rotor rotates in the left direction; the quartz crucible with the left-handed rotor rotates in the right direction; the outer edge linear speed of the quartz crucible is 10~350 / Second.

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