Chip hot-spot cooling device combining multi-stage thermoelectric refrigerating unit with micro-channel, preparation method of chip hot-spot cooling device and electronic device

By adopting a multi-stage thermoelectric cooler combined with a microchannel cooling structure on the chip, the problem of the existing technology being difficult to effectively reduce the chip hot spot temperature is solved, and high-efficiency and low-energy consumption hot spot cooling is achieved, and low-temperature requirements such as infrared chips are met.

CN119958133APending Publication Date: 2025-05-09HUAZHONG UNIV OF SCI & TECH
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Patent Information

Application Number
CN202510375141.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-03-27
Publication Date
2025-05-09

AI Technical Summary

Technical Problem

Existing thermal management technologies are difficult to effectively reduce the temperature of local hot spots of chips, especially in electronic devices that require precise low temperature control, resulting in low overall cooling efficiency of the system and insufficient device reliability.

Method used

A chip hotspot cooling device with a multi-stage thermoelectric cooler combined with a microchannel is adopted, and multiple thermoelectric coolers and microchannel cooling structures are arranged stacked to achieve efficient hotspot cooling. The thermoelectric coolers are connected by interface materials, and the microchannel cooling structure is connected to the thermoelectric cooler, forming a top-down multi-stage cooling structure.

Benefits of technology

Under the same hotspot power density, a greater reduction in the hotspot temperature is achieved, and the energy consumption is lower when the hotspot temperature drops, which can reduce the hotspot temperature below room temperature and meet the temperature requirements of infrared chips.

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Abstract

The invention belongs to the related technical field of heat management of electronic devices, and discloses a chip hot-spot cooling device with a multi-stage thermoelectric refrigerating unit combined with a micro-channel, a preparation method of the chip hot-spot cooling device and an electronic device, and the chip hot-spot cooling device comprises a plurality of thermoelectric refrigerating units and a micro-channel cooling structure. The thermoelectric refrigerators and the micro-channel cooling structure are stacked from top to bottom, and the micro-channel cooling structure is a liquid cooling structure. Compared with a single-stage thermoelectric refrigerating unit, the multi-stage thermoelectric refrigerating unit has the advantages that the hot-spot temperature drop is increased, meanwhile, the micro-channel effectively dissipates heat of the multi-stage thermoelectric refrigerating unit, the cooling performance of the multi-stage thermoelectric refrigerating unit is improved, the lower hot-spot temperature can be achieved under the same hot-spot power density, the hot-spot temperature can be reduced to the room temperature or below, and the temperature requirement of an infrared chip is met.
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Description

Technical Field

[0001] The present invention belongs to the technical field related to thermal management of electronic devices, and more specifically, relates to a chip hot spot cooling device combining a multi-stage thermoelectric cooler with a microchannel, a preparation method thereof, and an electronic device. Background Art

[0002] Temperature-sensitive electronic and optoelectronic components, such as laser diodes, light-emitting diodes, and optoelectronic chips, require precise temperature control to maintain stable and efficient operation of the devices. For example, the detection performance of indium gallium arsenide (InGaAs) detectors in short-wave infrared detectors is limited by dark current noise. The amount of dark current changes with the temperature of the detector, and for InGaAs detectors, the amount of dark current decreases by half for every 10°C drop in temperature. Therefore, it is necessary to control the temperature inside the detector at -20°C or even below to reduce dark current noise and enhance the sensitivity of short-wave infrared detectors. At the same time, with the continuous integration of electronic devices, the space for cooling is getting smaller and smaller, while the local power density of the chip is getting larger and larger, and even hot spots with local power density of tens or even hundreds of W / cm2 appear (the area is usually within 1mm2). Although the total power of these hot spots is not large (usually less than 1W), due to the high power density, the hot spots will still have a large temperature overheating after the heat diffuses through the inside of the chip.

[0003] At present, thermal management technologies, such as microchannels, heat pipes, and spray cooling, usually cool the entire chip evenly. However, reducing the hotspot temperature requires excessively increasing the pump power consumption, which will cause the non-hotspot area of ​​the chip to be overcooled, and for devices that require precise low-temperature control, such as infrared detectors, their low-temperature thermal management requirements cannot be met. Therefore, cooling the local hotspot of the chip can improve the overall cooling efficiency of the system and improve the reliability of the device operation. Summary of the invention

[0004] In response to the above defects or improvement needs of the prior art, the present invention provides a chip hotspot cooling device combined with a multi-stage thermoelectric cooler and a microchannel, and a preparation method and electronic device thereof, which aims to solve the problem that existing thermal management equipment is difficult to efficiently dissipate heat from chip hotspots.

[0005] To achieve the above objectives, according to one aspect of the present invention, a chip hotspot cooling device combining a multi-stage thermoelectric cooler with a microchannel is provided, wherein the chip hotspot cooling device comprises a plurality of thermoelectric coolers and a microchannel cooling structure, wherein the plurality of thermoelectric coolers and the microchannel cooling structure are stacked from top to bottom, and the microchannel cooling structure is a liquid cooling structure.

[0006] Furthermore, the plurality of thermoelectric coolers are connected via an interface material or the hot substrate of one of two adjacent thermoelectric coolers and the cold substrate of the other thermoelectric cooler share a substrate to connect the corresponding two thermoelectric coolers.

[0007] Furthermore, a thermoelectric cooler adjacent to the microchannel cooling structure is connected to the microchannel cooling structure via an interface material, or the microchannel cooling structure is directly prepared on a substrate of a corresponding hot spot cooler, so that the microchannel cooling structure is connected to the corresponding thermoelectric cooler.

[0008] Furthermore, the multiple thermoelectric coolers are named in order from top to bottom, the top thermoelectric cooler is called the first-stage thermoelectric cooler, and the thermoelectric cooler next to the first-stage thermoelectric cooler is called the second-stage thermoelectric cooler; the area of ​​the first-stage thermoelectric cooler is larger than the hot spot area, and the cooling power is larger than the total power of the hot spot. Starting from the second stage, the cooling power of the next-stage thermoelectric cooler must be larger than the sum of the input power and the hot spot power of the thermoelectric coolers at the upper stages when the current is the optimal current.

[0009] Furthermore, the area of ​​the microchannel cooling structure is larger than the area of ​​the last stage thermoelectric cooler.

[0010] Furthermore, the microchannel cooling structure is composed of rectangular microchannels arranged parallel to each other, the microchannel range is 50μm-2000μm, the microchannel width range is 50μm-1000μm, the microchannel spacing range is 50μm-1000μm, and the number range is 10-50.

[0011] The present invention also provides an electronic device, which includes a chip and a chip hotspot cooling device combining a multi-stage thermoelectric cooler with a microchannel as described above, wherein the chip is arranged on a side of the multi-stage thermoelectric cooler away from the microchannel cooling structure.

[0012] The present invention also provides a method for preparing the chip hot spot cooling device of the multi-stage thermoelectric cooler combined with a microchannel as described above, the preparation method comprising the following steps: first, connecting a plurality of thermoelectric coolers through an interface material to form a multi-stage thermoelectric cooler, or connecting the corresponding two thermoelectric coolers by using a common substrate of a hot substrate of one thermoelectric cooler and a cold substrate of another thermoelectric cooler between two adjacent thermoelectric coolers, and then obtaining a multi-stage thermoelectric cooler;

[0013] Afterwards, the microchannel cooling structure is connected to the thermoelectric cooler at one end of the multi-stage thermoelectric cooler through the interface material to obtain the chip hotspot cooling device; or, a microchannel cooling structure is prepared on the substrate of the thermoelectric cooler at one end of the multi-stage thermoelectric cooler to obtain the chip hotspot cooling device.

[0014] Furthermore, the interface material is nano silver paste or solder.

[0015] Furthermore, an embedded microchannel is prepared on the substrate of the thermoelectric cooler at one end of the multi-stage thermoelectric cooler by laser etching, plasma etching or mechanical processing, and a plurality of embedded microchannels arranged in parallel to each other constitute the microchannel cooling structure.

[0016] In general, compared with the prior art, the above technical solutions conceived by the present invention mainly have the following beneficial effects:

[0017] 1. The chip hotspot cooling device of the multi-stage thermoelectric cooler combined with the microchannel cooler cools the chip hotspot. Compared with the single-stage thermoelectric cooler cooling the hotspot, it can achieve a greater hotspot temperature reduction under the same hotspot power density. At the same time, a small current is required to achieve a large hotspot temperature reduction, and the energy consumption is low. For example, when the hotspot power is 0.3W and the hotspot temperature is reduced to the same temperature, the energy consumption of the single-stage thermoelectric cooler combined with the microchannel cooling is 18.8W when the current of 2.6A is applied, while the energy consumption of the chip hotspot cooling device of the double-stage thermoelectric cooler combined with the microchannel is only 7.5W by applying 0.8A current to the first-stage thermoelectric cooler and 1.5A current to the second-stage thermoelectric cooler. This is because the energy consumption of the thermoelectric cooler will increase significantly when the current is large, and the double-stage thermoelectric cooler adjusts the current to make both stages of the thermoelectric cooler in a state of low energy consumption.

[0018] 2. The multi-stage thermoelectric cooler is combined with a microchannel chip hot spot cooling device to cool the chip hot spot. Compared with the hot end of the traditional air-cooled multi-stage thermoelectric cooler, it can reduce the heat dissipation volume of the hot end and improve the cooling performance of the thermoelectric cooler.

[0019] 3. Experimental verification shows that the multi-stage thermoelectric cooler increases the hotspot temperature drop compared to the single-stage thermoelectric cooler. At the same time, the microchannel effectively dissipates heat from the multi-stage thermoelectric cooler, improving the cooling performance of the multi-stage thermoelectric cooler. It can achieve a lower hotspot temperature at the same hotspot power density and can be reduced to below room temperature, meeting the temperature requirements of the infrared chip and achieving lower energy consumption when a larger hotspot temperature drop is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of a chip hot spot cooling device combining a double-stage thermoelectric cooler and a microchannel provided by the present invention;

[0021] Figure 2 It is a schematic diagram of a chip hot spot cooling device combining a single-stage thermoelectric cooler and a microchannel provided by the present invention;

[0022] Figure 3 is a schematic diagram of a hotspot thermal management temperature measurement system provided by an embodiment of the present invention;

[0023] Figure 4 It is a relationship diagram between the current of the second-stage thermoelectric cooler and the hot spot temperature in the chip hot spot cooling device of the double-stage thermoelectric cooler combined with the microchannel provided in the embodiment of the present invention;

[0024] Figure 5 It is a relationship diagram between the current of the first-stage thermoelectric cooler and the hot spot temperature in the chip hot spot cooling device of the double-stage thermoelectric cooler combined with the microchannel provided by the embodiment of the present invention;

[0025] Figure 6 is a graph showing the relationship between hotspot power density and hotspot temperature provided by an embodiment of the present invention;

[0026] Figure 7 It is a schematic diagram of a chip hot spot cooling device provided by the present invention in combination with a double-stage thermoelectric cooler and an embedded microchannel;

[0027] Figure 8 It is a schematic diagram of a chip hot spot cooling device provided by the present invention, which combines a dual-stage common substrate thermoelectric cooler with an embedded microchannel;

[0028] Fig. 9 It is a schematic diagram of a chip hot spot cooling device provided by the present invention in combination with an n-stage thermoelectric cooler and an embedded microchannel. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0030] Thermoelectric coolers are highly reliable solid-state heat pumps that transfer heat from the cold end to the hot end when driven by direct current. They have the advantages of controllable size and fast response, and can accurately control the temperature of hot spots in temperature-sensitive electronic devices. Combining the hot end of the thermoelectric device with a microchannel with a compact structure and high heat transfer coefficient can achieve efficient heat pumping of the thermoelectric cooler in a limited space, effectively improving the temperature control ability of electronic devices. However, the maximum temperature difference of a single-stage thermoelectric cooler is limited (usually <50°C), making it difficult to reduce the local hot spot of the chip to the optimal operating temperature of an infrared detector, and the energy efficiency ratio will drop sharply when operating at high current.

[0031] The present invention provides a chip hotspot cooling device combining a multi-stage thermoelectric cooler with a microchannel. The hotspot temperature control range of the chip hotspot cooling device is improved by using the multi-stage thermoelectric cooler, and the multi-stage thermoelectric cooler is efficiently dissipated by combining the microchannel cooling structure, so as to achieve precise control of the high power density hotspot temperature on the chip at the chip operating temperature, or even lower than the operating temperature of the warm infrared detector.

[0032] The chip hot spot cooling device comprises a plurality of thermoelectric coolers and a microchannel cooling structure, and the plurality of thermoelectric coolers and the microchannel cooling structure are stacked from top to bottom.

[0033] The plurality of thermoelectric coolers are connected via interface materials or the hot substrate of one thermoelectric cooler and the cold substrate of the other thermoelectric cooler of two adjacent thermoelectric coolers share a substrate so that the corresponding two thermoelectric coolers are connected.

[0034] The thermoelectric cooler adjacent to the microchannel cooling structure is connected to the microchannel cooling structure through an interface material, or the microchannel cooling structure is directly prepared on a substrate of a corresponding hot spot cooler, so that the microchannel cooling structure is connected to the corresponding thermoelectric cooler.

[0035] The multiple thermoelectric coolers are named in order from top to bottom. The top thermoelectric cooler is called a first-stage thermoelectric cooler, the thermoelectric cooler next to the first-stage thermoelectric cooler is called a second-stage thermoelectric cooler, and so on.

[0036] The area of ​​the first-stage thermoelectric cooler is larger than the hot spot area, and the cooling power is larger than the total power of the hot spot. Starting from the second stage, the cooling power of the next-stage thermoelectric cooler must be larger than the sum of the input power and the hot spot power of the thermoelectric coolers at the upper stages when the current is the optimal current.

[0037] The area of ​​the microchannel cooling structure is larger than that of the last stage thermoelectric cooler. The microchannel cooling structure is composed of rectangular microchannels arranged parallel to each other, the microchannel range is 50μm-2000μm, the microchannel width range is 50μm-1000μm, the microchannel spacing range is 50μm-1000μm, and the number range is 10-50.

[0038] The present invention also provides an electronic device, which includes a chip and a chip hotspot cooling device combining a multi-stage thermoelectric cooler with a microchannel as described above, wherein the chip is arranged on a side of the multi-stage thermoelectric cooler away from the microchannel cooling structure.

[0039] The present invention also provides a method for preparing the chip hot spot cooling device of the multi-stage thermoelectric cooler combined with a microchannel as described above, the preparation method comprising the following steps: first, connecting a plurality of thermoelectric coolers through an interface material to form a multi-stage thermoelectric cooler, or connecting the corresponding two thermoelectric coolers by using a common substrate of a hot substrate of one thermoelectric cooler and a cold substrate of another thermoelectric cooler between two adjacent thermoelectric coolers, and then obtaining a multi-stage thermoelectric cooler;

[0040] Afterwards, the microchannel cooling structure is connected to the thermoelectric cooler at one end of the multi-stage thermoelectric cooler through the interface material to obtain the chip hotspot cooling device; or, a microchannel cooling structure is prepared on the substrate of the thermoelectric cooler at one end of the multi-stage thermoelectric cooler to obtain the chip hotspot cooling device.

[0041] Taking nano-silver glue connection as an example, a thin and uniform layer of nano-silver glue is applied on the hot substrate of the upper-level thermoelectric refrigerator and the cold substrate of the lower-level thermoelectric refrigerator of the two adjacent thermoelectric refrigerators to be connected, and the mixture is fixed with a clamp and placed in a constant temperature box at 100°C for curing for 2 hours.

[0042] Taking solder connection as an example, a thin and even layer of solder is applied to the hot substrate of the upper thermoelectric cooler and the cold substrate of the lower thermoelectric cooler of the two adjacent thermoelectric coolers to be connected, and then they are fastened with a clamp and placed on the heating table with the clamp. The thermocouple is placed at the junction of the welding surface, and the heating table is turned on to heat the clamp until the thermocouple temperature reaches 10°C above the solder temperature and maintained for 5 minutes, and then the heating table is turned off to cool.

[0043] Taking sharing a substrate as an example, it is necessary to weld or electroplate the hot-end copper electrode of the previous thermoelectric cooler on the cold substrate of the thermoelectric cooler, then weld the thermoelectric arm, and then weld the cold substrate of the thermoelectric cooler welded or electroplated with the cold-end copper electrode to the thermoelectric arm.

[0044] The hot end substrate of the last stage of the multi-stage thermoelectric cooler is connected to the microchannel cooling structure through an interface material. Specifically, the interface material can be nano silver glue or solder; or an embedded microchannel cooling structure can be directly prepared on the hot end substrate. Specifically, the embedded microchannel can be prepared on the hot end substrate of the multi-stage thermoelectric cooler by laser etching, plasma etching or mechanical processing.

[0045] Taking the laser etching method to prepare a chip hotspot cooling device with a multi-stage thermoelectric cooler combined with an embedded microchannel as an example, according to the thermoelectric cooler substrate material (such as Al2O3 or AlN ceramics) and the laser type (such as femtosecond or nanosecond laser), the laser wavelength and power are adjusted to match the material absorption characteristics. The computer controls the laser focus spot to scan along a preset path on the substrate surface, removing the material layer by layer to form a channel; at the same time, an auxiliary gas (such as argon) is introduced to blow away the molten residue and reduce the heat-affected zone. The laser parameters (pulse frequency, scanning speed) need to be optimized to balance the depth and surface roughness of the etched microchannel.

[0046] Taking the preparation of a multi-stage thermoelectric cooler combined with an embedded microchannel chip hot spot cooling device by plasma etching as an example, a photoresist is spin-coated on the substrate surface and exposed and developed to form a mask pattern, or a metal mask is deposited and the channel pattern is defined by photolithography. The substrate is placed in a reactive ion etching or inductively coupled plasma device, and a reaction gas (such as CF4 / O2 for Al2O3, Cl2 / BCl3 for AlN) is introduced. The plasma is excited by radio frequency power, and the ions bombard the substrate vertically and react chemically with the material to generate volatile products. The etching rate is regulated by gas flow, pressure and power, and the typical rate is 0.1μm / min to 1μm / min. After etching, the mask is removed, and the residual organic matter on the surface is cleaned by plasma.

[0047] Taking the mechanical processing of a chip hot spot cooling device with a multi-stage thermoelectric cooler combined with an embedded microchannel as an example, the channel is processed according to a preset path by a CNC machine tool. Coolant can be applied during processing to reduce thermal damage.

[0048] like Figure 1 As shown, a schematic diagram of a chip hotspot cooling device of a double-stage thermoelectric cooler combined with a microchannel when two thermoelectric coolers are used. Nanosilver glue is used to bond the chip to the first-stage thermoelectric cooler, the first-stage thermoelectric cooler to the second-stage thermoelectric cooler, and the second-stage thermoelectric cooler to the microchannel. The simulated hotspot chip has a length of 1.5mm, a width of 1.5mm, and a height of 0.4mm; the first-stage thermoelectric cooler has a length of 1.8mm, a width of 1.8mm, and a thermoelectric arm height of 0.5mm; the second-stage thermoelectric cooler has a length of 6.8mm, a width of 7.2mm, and a thermoelectric arm height of 0.35mm; the microchannel consists of 22 rectangular channels. Each channel has a length of 6mm, a width of 0.22mm, a channel spacing of 0.22mm, and a channel depth of 0.4mm.

[0049] In order to compare the chip hotspot cooling device of the double-stage thermoelectric cooler combined with microchannels to achieve a lower hotspot temperature, a chip hotspot cooling device of the single-stage thermoelectric cooler combined with microchannels was prepared. Both have the same simulated hotspot chip and microchannel, and the second-stage thermoelectric cooler in the single-stage thermoelectric cooler is the same as that in the double-stage thermoelectric cooler. Figure 2It is a schematic diagram and actual picture of a chip hot spot cooling device that combines a single-stage thermoelectric cooler with a microchannel.

[0050] like Figure 3 As shown, the present invention also provides a hot spot thermal management temperature measurement system, which includes a liquid supply circuit, a data acquisition and control system, and a temperature control device of the multi-stage thermoelectric cooler combined with a microchannel as described above, wherein the temperature control device of the multi-stage thermoelectric cooler combined with a microchannel connects the liquid supply circuit and the data acquisition and control system.

[0051] The present invention also provides a current configuration process for realizing the lowest temperature by combining a multi-stage thermoelectric cooler with a microchannel chip hot spot cooling device. Specifically, flow is first supplied to the microchannel cooling structure to ensure effective heat dissipation at the hot end of the multi-stage thermoelectric cooler. Then, the current of the thermoelectric cooler closest to the microchannel is gradually increased until the hot spot temperature reaches a local minimum; then, the current of the upper-stage thermoelectric cooler is gradually increased until the hot spot temperature reaches a local minimum again, and this operation is continued until the current of the first-stage thermoelectric cooler reaches a local minimum again.

[0052] Figure 4 and Figure 5 The current configuration process of the dual-stage thermoelectric cooler combined with the microchannel chip hot spot cooling device to achieve the lowest temperature is shown. Taking the chip hot spot power of 0.5W as an example, Figure 4 The figure shows the change process of the hot spot temperature with the second-stage thermoelectric cooler current when the second-stage thermoelectric cooler current is 0A. As the second-stage thermoelectric cooler current continues to increase, the hot spot temperature first decreases from 98.7℃ at 0A to 52.1℃ at 2.6A. 2.6A is the optimal current for the second-stage thermoelectric cooler current, and the hot spot temperature will rise as the current continues to increase. Figure 5 The figure shows the change process of the hot spot temperature with the current of the first stage thermoelectric cooler when the current of the second stage thermoelectric cooler is the optimal current of 2.6A. As the current of the first stage thermoelectric cooler increases, the hot spot temperature first decreases from 52.1℃ at 0A to -2.7℃ at 1A. 1A is the optimal current of the first stage thermoelectric cooler, and the hot spot temperature will rise as the current increases. -2.7℃ is the lowest value of the hot spot temperature when the hot spot power is 0.5W.

[0053] Figure 6The figure shows the comparison of the lowest temperatures that can be achieved by a dual-stage thermoelectric cooler combined with a microchannel chip hotspot cooling device and a single-stage thermoelectric cooler combined with a microchannel chip hotspot cooling device at different hotspot powers. It can be seen that below 0.3W, the dual-stage thermoelectric cooler combined with a microchannel chip hotspot cooling device can achieve a lower temperature than the single-stage thermoelectric cooler combined with a microchannel chip hotspot cooling device, and below 0.2W, a low temperature below -20°C can be achieved. It should be noted that a wider low temperature range can be achieved by using a first-stage thermoelectric cooler with a higher cooling power density. The dual-stage thermoelectric cooler combined with a microchannel chip hotspot cooling device can also achieve lower energy consumption at lower temperatures than the single-stage thermoelectric cooler combined with a microchannel cooling device. With a hotspot power of 0.3W and when the hotspot temperature is lowered to the same temperature, the energy consumption of a single-stage thermoelectric cooler combined with microchannel cooling is 18.8W when a current of 2.6A is applied, while the double-stage thermoelectric cooler combined with a microchannel chip hotspot cooling device consumes only 7.5W by applying a current of 0.8A to the first-stage thermoelectric cooler and a current of 1.5A to the second-stage thermoelectric cooler. This is because the energy consumption of the thermoelectric cooler will increase significantly when the current is large, while the double-stage thermoelectric cooler adjusts the current to make both stages of the thermoelectric cooler in a state of low energy consumption.

[0054] The multi-stage thermoelectric cooler combined with a microchannel chip hot spot cooling device proposed in the present invention is also suitable for combining with an embedded microchannel to enhance the heat exchange at the hot end of the multi-stage thermoelectric cooler. For example, Figure 7 The schematic diagram of a chip hotspot cooling device with a dual-stage thermoelectric cooler combined with an embedded microchannel. The size of the chip, the first-stage thermoelectric cooler, and the second-stage thermoelectric cooler remain unchanged. The chip and the first-stage thermoelectric cooler, and the first-stage thermoelectric cooler and the second-stage thermoelectric cooler are connected by interface materials. The microchannel is prepared on the hot end substrate of the second-stage thermoelectric cooler using the method proposed in the present invention. The embedded microchannel has a depth range of 50μm-2000μm, a width range of 50μm-1000μm, a spacing range of 50μm-1000μm, and a number range of 10-50.

[0055] The multi-stage thermoelectric cooler combined with the microchannel chip hot spot cooling device proposed in the present invention is also applicable to a combination of multiple thermoelectric devices. For example, Fig. 9 Schematic diagram of a chip hot spot cooling device with a multi-stage thermoelectric cooler combined with an embedded microchannel when n thermoelectric coolers are used. The chip and the first-stage thermoelectric cooler, the upper-stage thermoelectric cooler and the lower-stage thermoelectric cooler are connected by interface materials, and the embedded microchannel is prepared on the hot end substrate of the last-stage thermoelectric cooler by the method proposed in the present invention.

[0056] The multi-stage thermoelectric cooler combined with the chip hot spot cooling device of the microchannel proposed by the present invention is also suitable for a common substrate between multiple thermoelectric devices. Figure 8 The schematic diagram of the temperature control device of the double-stage common substrate thermoelectric cooler combined with the embedded microchannel. The chip is connected to the first-stage thermoelectric cooler by an interface material. The hot-end substrate of the upper-stage thermoelectric cooler and the cold-end substrate of the lower-stage thermoelectric cooler share a substrate, which eliminates the interface thermal resistance and enhances the cooling capacity of the system. The embedded microchannel is prepared on the hot-end substrate of the last-stage thermoelectric cooler by the method proposed in the present invention.

[0057] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A chip hot spot cooling device combining a multi-stage thermoelectric cooler with a microchannel, characterized in that: The chip hot spot cooling device includes a plurality of thermoelectric coolers and a microchannel cooling structure. The plurality of thermoelectric coolers and the microchannel cooling structure are stacked from top to bottom, and the microchannel cooling structure is a liquid cooling structure.

2. The chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 1, characterized in that: The plurality of thermoelectric coolers are connected via interface materials or the hot substrate of one thermoelectric cooler and the cold substrate of the other thermoelectric cooler of two adjacent thermoelectric coolers share a substrate so that the corresponding two thermoelectric coolers are connected.

3. The chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 1, characterized in that: The thermoelectric cooler adjacent to the microchannel cooling structure is connected to the microchannel cooling structure through an interface material, or the microchannel cooling structure is directly prepared on a substrate of a corresponding hot spot cooler, so that the microchannel cooling structure is connected to the corresponding thermoelectric cooler.

4. The chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 1, characterized in that: The multiple thermoelectric refrigerators are named in order from top to bottom. The top thermoelectric refrigerator is called the first-stage thermoelectric refrigerator, and the thermoelectric refrigerator next to the first-stage thermoelectric refrigerator is called the second-stage thermoelectric refrigerator. The area of ​​the first-stage thermoelectric refrigerator is larger than the hot spot area, and the cooling power is greater than the total hot spot power. Starting from the second stage, the cooling power of the next-stage thermoelectric refrigerator must be greater than the sum of the input power and the hot spot power of the thermoelectric refrigerators of the upper stages when the current is the optimal current.

5. The chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 4, characterized in that: The area of ​​the microchannel cooling structure is larger than the area of ​​the last stage thermoelectric cooler.

6. The chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 1, characterized in that: The microchannel cooling structure is composed of rectangular microchannels arranged in parallel with each other, the microchannel range is 50μm-2000μm, the microchannel width range is 50μm-1000μm, the microchannel spacing range is 50μm-1000μm, and the number range is 10-50.

7. An electronic device, characterized in that: The electronic device comprises a chip and a chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in any one of claims 1 to 6, wherein the chip is arranged on a side of the multi-stage thermoelectric cooler away from the microchannel cooling structure.

8. A method for preparing a chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in any one of claims 1 to 6, characterized in that: The preparation method comprises the following steps: first, connecting a plurality of thermoelectric coolers through an interface material to form a multi-stage thermoelectric cooler, or connecting the corresponding two thermoelectric coolers by using a hot substrate of one thermoelectric cooler and a cold substrate of the other thermoelectric cooler to share a substrate, thereby obtaining a multi-stage thermoelectric cooler; Afterwards, the microchannel cooling structure is connected to the thermoelectric cooler at one end of the multi-stage thermoelectric cooler through the interface material to obtain the chip hotspot cooling device; or, a microchannel cooling structure is prepared on the substrate of the thermoelectric cooler at one end of the multi-stage thermoelectric cooler to obtain the chip hotspot cooling device.

9. The method for preparing the chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 8, characterized in that: The interface material is nano silver glue or solder.

10. The method for preparing the chip hot spot cooling device combining a multi-stage thermoelectric cooler and a microchannel as claimed in claim 8, characterized in that: An embedded microchannel is prepared on a substrate of a thermoelectric cooler at one end of the multi-stage thermoelectric cooler by laser etching, plasma etching or mechanical processing, and a plurality of embedded microchannels arranged in parallel to each other constitute the microchannel cooling structure.